WO2011161902A1 - 金属ベース基板を構成する樹脂層の形成に用いる樹脂組成物、金属ベース基板、及び金属ベース基板の製造方法 - Google Patents
金属ベース基板を構成する樹脂層の形成に用いる樹脂組成物、金属ベース基板、及び金属ベース基板の製造方法 Download PDFInfo
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- WO2011161902A1 WO2011161902A1 PCT/JP2011/003402 JP2011003402W WO2011161902A1 WO 2011161902 A1 WO2011161902 A1 WO 2011161902A1 JP 2011003402 W JP2011003402 W JP 2011003402W WO 2011161902 A1 WO2011161902 A1 WO 2011161902A1
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L71/00—Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
- C08L71/08—Polyethers derived from hydroxy compounds or from their metallic derivatives
- C08L71/10—Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
- B32B27/26—Layered products comprising a layer of synthetic resin characterised by the use of special additives using curing agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/38—Layered products comprising a layer of synthetic resin comprising epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L71/00—Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/056—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an organic insulating layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2264/00—Composition or properties of particles which form a particulate layer or are present as additives
- B32B2264/10—Inorganic particles
- B32B2264/102—Oxide or hydroxide
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/202—Conductive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/732—Dimensional properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2650/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
- C08G2650/28—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type
- C08G2650/56—Polyhydroxyethers, e.g. phenoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0209—Inorganic, non-metallic particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0239—Coupling agent for particles
Definitions
- the present invention relates to a resin composition used for forming a resin layer constituting a metal base substrate, a metal base substrate, and a method for manufacturing the metal base substrate.
- circuit boards on which highly exothermic electronic components are mounted are required to have heat dissipation.
- a metal base substrate in which an insulating layer and a metal foil are formed on a metal plate is used as a circuit board.
- a circuit board is obtained by forming a conductor circuit by etching this metal foil.
- the engine room has a severe environment such as a high temperature and a large temperature change, and a substrate having a large heat radiation area is required.
- metal base substrates that are further excellent in heat dissipation have attracted attention.
- Patent Documents 1 to 3 This type of technology is described in Patent Documents 1 to 3.
- Patent Documents 1 and 2 describe the use of a resin layer containing an acrylic resin.
- Patent Document 3 describes using a resin layer containing a silicone resin.
- the metal base substrate of the above prior art has room for improvement in the balance of adhesion between the metal plate and the resin layer, heat cycle performance and insulation resistance. It was issued.
- the present invention includes the following.
- A a bisphenol A type phenoxy resin having a weight average molecular weight of 4.0 ⁇ 10 4 to 4.9 ⁇ 10 4 ;
- B an inorganic filler;
- C a silane coupling agent,
- the content of the (C) silane coupling agent with respect to a total amount of 100% by mass of the resin composition is c% by mass
- the content of the inorganic filler (B) with respect to 100% by mass of the total amount of the resin composition is b% by mass, 5 ⁇ 10 ⁇ 2 ⁇ c ⁇ (b ⁇ 1/100) ⁇ 11
- a resin composition, wherein the metal plate is an aluminum plate.
- a resin composition, wherein the inorganic filler is aluminum hydroxide or alumina.
- Content of the said phenoxy resin is a resin composition which is 10 to 40 weight% with respect to 100 mass% of the total value of the said resin composition.
- the resin composition whose said epoxy resin is (D) bisphenol A type epoxy resin.
- Metal base substrate. [8] In the metal base substrate according to [7], A metal base substrate having an insulation resistance value after PCT treatment under the conditions of 121 ° C., 100% humidity and 96 hours / insulation resistance value before PCT treatment of 10 ⁇ 3 or more and 10 ⁇ 1 or less.
- the resin layer is (A) a bisphenol A type phenoxy resin having a weight average molecular weight of 4.0 ⁇ 10 4 to 4.9 ⁇ 10 4 ; (B) an inorganic filler; (C) a silane coupling agent, The content of the (C) silane coupling agent with respect to a total amount of 100% by mass of the resin composition is c% by mass, When the content of the inorganic filler (B) with respect to 100% by mass of the total amount of the resin composition is b% by mass, 5 ⁇ 10 ⁇ 2 ⁇ c ⁇ (b ⁇ 1/100) ⁇ 11
- the manufacturing method of the metal base substrate which satisfy
- the inorganic filler comprises a monodisperse alumina having an average particle diameter D 50 is 3 ⁇ m or 5 ⁇ m or less, the production method of the metal base substrate.
- a metal base substrate having an excellent balance of adhesion between the metal plate and the resin layer, heat cycle performance, and insulation resistance is realized.
- the resin composition of the present invention is a resin composition used for formation of the said resin layer among metal base boards provided with a metal plate, metal foil, and the resin layer arrange
- a resin composition includes (A) a bisphenol A type phenoxy resin having a weight average molecular weight of 4.0 ⁇ 10 4 to 4.9 ⁇ 10 4 , (B) an inorganic filler, and (C) a silane coupling agent. And 5 ⁇ 10 ⁇ 2 ⁇ c- (b ⁇ 1/100) ⁇ 11. Details will be described below.
- a bisphenol A type phenoxy resin having a weight average molecular weight of 4.0 ⁇ 10 4 to 4.9 ⁇ 10 4 refers to (A) phenoxy
- the compound having a diphenylpropane structure in the resin structure and having a weight average molecular weight of 4.0 ⁇ 10 4 to 4.9 ⁇ 10 4 is not particularly limited.
- the elastic modulus can be lowered, and when used for a metal base substrate, the stress relaxation property is also excellent.
- the semiconductor device when a semiconductor device on which an electronic component or the like is mounted using a metal base substrate using the resin composition of the present invention, the semiconductor device can be used even in an environment of rapid heating / cooling. The occurrence of defects such as cracks is suppressed at or near the solder joint where the metal base substrate is joined.
- the weight average molecular weight of (A) a phenoxy resin 4.0 ⁇ 10 4 or more, it is possible to sufficiently low modulus of elasticity, when used in a semiconductor device, rapid heating / cooling under In addition, cracks at or near the solder joint are less likely to occur. Thus, the heat cycle characteristics of the metal base substrate can be improved.
- the weight average molecular weight of the (A) phenoxy resin to 4.9 ⁇ 10 4 or less, it is possible to suppress the deterioration of fluidity at the time of pressing due to an increase in viscosity and the generation of voids and the like. It is possible to increase the insulation reliability of the substrate. In this way, the insulating characteristics of the metal base substrate can be improved.
- the content of the (A) phenoxy resin is preferably 10 to 40% by weight of the entire resin composition (hereinafter, “to” represents that an upper limit value and a lower limit value are included unless otherwise specified).
- the whole resin composition means solid except a solvent, and liquid components, such as a liquid epoxy and a coupling agent, are contained in a resin composition.
- the inorganic filler is not particularly limited, but for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, aluminum borate whisker, boron nitride , Crystalline silica, amorphous silica, silicon carbide and the like.
- alumina, aluminum nitride, boron nitride, crystalline silica, and amorphous silica are preferable from the viewpoint of high thermal conductivity. More preferred is alumina. When alumina is used, it is preferable in terms of heat resistance and insulation in addition to high thermal conductivity. Further, crystalline silica or amorphous silica is preferable in that it has few ionic impurities. A metal base substrate having excellent insulation reliability can be manufactured. Crystalline silica or amorphous silica is suitable in that it has high insulation under a water vapor atmosphere such as a pressure cooker test and has little corrosion on metals, aluminum wires, aluminum plates, and the like.
- aluminum hydroxide and magnesium hydroxide are preferred. Furthermore, for the purpose of adjusting melt viscosity and imparting cyclotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica, Amorphous silica is preferred.
- the content of the inorganic filler is not particularly limited, but is preferably 40 to 70% by weight based on the entire resin composition.
- (B) By making content of an inorganic filler into 40 weight% or more, heat resistance can be reduced and sufficient heat dissipation can be obtained.
- the content of the (B) inorganic filler by setting the content of the (B) inorganic filler to 70% by weight or less, it is possible to suppress fluidity during pressing and generation of voids and the like.
- (C) It is preferable that content of a silane coupling agent satisfy
- c (mass%) shows content of (C) silane coupling agent with respect to 100 mass% of total amount of a resin composition
- b (mass%) is with respect to 100 mass% of total amount of a resin composition.
- B) The content of the inorganic filler shall be indicated.
- [c- (b ⁇ 1/100)] is (C) a silane coupling agent (that is, a resin) that is present in the resin composition without adhering to the surface of the inorganic filler.
- the free (C) silane coupling agent content in the composition is shown.
- the silane coupling agent has a functional group bonded to an organic material and an inorganic material in the molecule.
- the inorganic material and the organic material are bonded via the (C) silane coupling agent.
- the silane coupling agent is used for bonding (B) the inorganic filler and the resin composition, and (B) the surface of the inorganic filler is treated.
- the processing amount of (C) silane coupling agent is determined according to the content of (B) inorganic filler. Become.
- the treatment amount of the (C) silane coupling agent is about 0.5 to 1% by mass with respect to 100% by mass of the total amount of the (B) inorganic filler. Therefore, (b ⁇ 1/100) in the above formula represents a general processing amount of (C) silane coupling agent relative to (B) inorganic filler. And (C) The amount in the resin composition is liberated as described above by subtracting the treatment amount (b ⁇ 1/100) of the silane coupling agent from the total amount c of the silane coupling agent ( C) The content of silane coupling agent [c- (b ⁇ 1/100)] can be estimated.
- the free (C) silane coupling agent in such a resin composition is present in the resin composition without adhering to the surface of the (B) inorganic filler.
- Such (C) silane coupling agent can act on the metal plate which is an inorganic material, and can improve the adhesiveness of a resin layer and a metal plate.
- the content of the free (C) silane coupling agent in the resin composition to a specific range, the balance between the adhesion between the metal plate and the resin layer and the heat cycle characteristics is realized. can do.
- the lower limit is preferably 5 ⁇ 10 ⁇ 2 mass% or more, more preferably 1 ⁇ 10 ⁇ 1 mass% or more, Preferably, it is 5 ⁇ 10 ⁇ 1 % by mass or more, and the upper limit is not particularly limited, but for example, is preferably 11% by mass or less, more preferably 10% by mass or less, and further preferably 9% by mass or less. It is.
- the content of the free (C) silane coupling agent in the resin composition equal to or higher than the lower limit, the effect obtained from the (B) inorganic filler can be sufficiently extracted, and the metal plate and the resin layer It is possible to improve the adhesion of the metal base substrate and improve the insulating properties of the metal base substrate. Moreover, by making the content of the free (C) silane coupling agent in the resin composition not more than the upper limit value, it is suppressed that the silane coupling agent is hydrolyzed and the solder heat resistance is lowered.
- [c- (b ⁇ 1/100)] is 0 or less because the treatment amount of (C) silane coupling agent is 100% by mass of the total amount of (B) inorganic filler.
- it is about 1% by mass, in other words, it can be said that it is a case where a general processing amount of (C) silane coupling agent is used.
- the metal base substrate using this type of resin composition has considerable room for improving the adhesion between the metal plate and the resin layer.
- the adhesion between the metal plate and the resin layer can be improved, and the insulating properties of the metal base substrate can be improved.
- the resin composition can use an epoxy resin as a modifier.
- an epoxy resin By adding an epoxy resin, the moisture resistance and heat resistance of the resin composition, particularly the heat resistance after moisture absorption is improved.
- the epoxy resin is not particularly limited as long as it is an epoxy resin having two or more epoxy groups in one molecule.
- bisphenol A, bisphenol F, biphenyl, novolac, polyfunctional phenol, naphthalene And glycidyl ethers such as alicyclic type and alcohol type, glycidyl amine type and glycidyl ester type, and the like can be used alone or in combination.
- bisphenol A epoxy resin is preferable from the viewpoint of heat resistance, moisture resistance, metal adhesion, and fluidity during press molding, and particularly liquid bisphenol A epoxy resin is preferable at room temperature.
- the bisphenol A epoxy resin that is liquid at room temperature is particularly excellent in fluidity at the time of press molding, is excellent in compatibility with the bisphenol A type phenoxy resin, and does not cause phase separation or the like, and thus has excellent heat resistance.
- the resin composition of the present invention may further contain an epoxy resin curing agent.
- an epoxy resin curing agent for example, an acid anhydride, an amine compound, a phenol compound, etc. are mentioned.
- the resin composition of the present invention may use a curing accelerator as necessary.
- the curing accelerator is not particularly limited, and examples thereof include imidazoles and derivatives thereof, tertiary amines, and quaternary ammonium salts.
- the resin composition of the present invention can optionally be used in combination with known thermoplastic resins, elastomers, flame retardants and fillers, dyes, ultraviolet absorbers and the like as necessary.
- the metal foil with resin will be described.
- the metal foil with a resin using the resin composition described above can be obtained by forming a resin layer made of the resin composition on the metal foil.
- the resin composition of the present invention is acetone, methyl ethyl ketone, methyl isobutyl ketone, toluene, ethyl acetate, cyclohexane, heptane, cyclohexane cyclohexanone, tetrahydrofuran, dimethylformamide, dimethylacetamide, dimethyl sulfoxide, ethylene glycol,
- Various mixing machines such as ultrasonic dispersion method, high-pressure collision dispersion method, high-speed rotation dispersion method, bead mill method, high-speed shear dispersion method, and rotation and revolution dispersion method in organic solvents such as cellsolve, carbitol, and anisole
- a resin varnish is prepared by dissolving, mixing, and stirring using
- the content of the resin composition in the resin varnish is not particularly limited, but is preferably 45 to 85% by weight, particularly preferably 55 to 75% by weight.
- the resin varnish is coated on the metal foil using various coating apparatuses, and then dried.
- the resin varnish is spray-coated on the metal foil with a spray device and then dried.
- a metal foil with a resin can be produced by these methods.
- a coating apparatus is not specifically limited, For example, a roll coater, a bar coater, a knife coater, a gravure coater, a die coater, a comma coater, a curtain coater, etc. can be used.
- a method using a die coater, a knife coater, and a comma coater is preferable. Thereby, the metal foil with resin which does not have a void and has the thickness of a uniform insulating layer can be manufactured efficiently.
- the thickness of the resin layer is preferably in the range of 50 ⁇ m to 250 ⁇ m.
- the insulating adhesive layer can reduce the generation of thermal stress due to the difference in thermal expansion coefficient between the metal plate used for the metal base substrate, for example, an aluminum plate and the resin layer. I can do it enough.
- a semiconductor element, a resistance component, or the like is surface-mounted on such a metal base substrate, an increase in distortion between members can be suppressed and sufficient thermal shock reliability can be obtained.
- the thickness of the resin layer is reduced, and good thermal shock reliability can be obtained, and the thermal resistance is reduced and sufficient heat dissipation is achieved. Can be obtained.
- the metal foil is not particularly limited, but, for example, copper and copper alloys, aluminum and aluminum alloys, silver and silver alloys, gold and gold alloys, zinc and zinc alloys, nickel and nickel alloys, tin and tin alloys
- Metal foils such as an alloy, iron, and iron-type alloy, are mentioned.
- copper foil is preferable in that the metal foil can be used as a conductor circuit by etching. From the viewpoint of low thermal expansion, an iron-nickel alloy is preferable.
- the method for producing the metal foil may be either an electrolytic method or a rolling method.
- the metal foil may be plated with metal such as Ni plating, Ni-Au plating, solder plating, etc., but the side in contact with the insulating adhesive layer of the conductor circuit from the viewpoint of adhesion to the insulating adhesive layer. It is more preferable that the surface of the film is roughened in advance by etching, plating, or the like.
- the thickness of the metal foil is not particularly limited, but is preferably 0.5 ⁇ m or more and 105 ⁇ m or less, more preferably 1 ⁇ m or more and 70 ⁇ m or less, and particularly preferably 9 ⁇ m or more and 35 ⁇ m or less.
- the thickness variation of metal foil can be made small by making the thickness of metal foil below an upper limit, and the surface roughness variation of a metal foil roughening surface can be suppressed.
- an ultrathin metal foil with a carrier foil can be used as the metal foil.
- the ultrathin metal foil with a carrier foil is a metal foil obtained by laminating a peelable carrier foil and an ultrathin metal foil.
- an ultrathin metal foil layer can be formed on both sides of an insulating layer by using an ultrathin metal foil with a carrier foil, for example, when forming a circuit by a semi-additive method, an ultrathin metal without performing electroless plating By electroplating the foil as a direct power supply layer, the ultrathin copper foil can be flash etched after the circuit is formed.
- an ultra-thin metal foil with a carrier foil even with an ultra-thin metal foil having a thickness of 10 ⁇ m or less, for example, the handling property of the ultra-thin metal foil in the pressing process is prevented from being deteriorated and the ultra-thin copper foil is prevented from cracking or breaking. Can do.
- the metal base substrate of the present invention includes a metal plate, a metal foil, and a resin layer disposed between the metal plate and the metal foil, and the resin layer is composed of the above resin composition.
- a metal base substrate has, for example, an insulation resistance value after PCT treatment under the conditions of 121 ° C., humidity 100%, and 96 hours / insulation resistance value before PCT treatment of 10 ⁇ 3 or more and 10 ⁇ 1 or less. May be specified. Since the resin composition has (A) phenoxy resin as described above, the metal base substrate of the present invention is excellent in insulating properties.
- the method for producing the metal base substrate according to the present invention is not particularly limited.
- the metal plate is laminated so that the resin surface of the metal foil with resin is in contact with one surface or both surfaces of the metal plate, and is pressed and heat-cured using a press or the like.
- a metal base substrate can be obtained by forming a resin layer.
- the metal base substrate can be used as a circuit substrate by forming a circuit by etching a metal foil.
- a metal foil with resin is further laminated, and a circuit is formed by etching in the same manner as described above to obtain a multi-layer metal base substrate.
- a solder resist may be formed on the outermost layer, and the connection electrode portion may be exposed so that a semiconductor element or an electronic component can be mounted by exposure and development.
- the thickness of the metal plate is not particularly limited, but is preferably 0.5 to 5.0 mm. This is because it is excellent in heat dissipation and economical.
- a metal base substrate As another method for producing a metal base substrate, there is a method in which the resin varnish is applied to a metal plate, and then a metal foil is laminated and heated and pressed. Similarly to the above, a circuit can be formed by etching.
- circuit formation may be performed by electroless plating and electrolytic plating.
- the resin composition can be used for the resin layer.
- the present invention ensures a sufficient content of the (C) silane coupling agent which is free in the resin composition, and further uses the polymer (A) phenoxy resin in combination to form a metal plate. Since the process of treating the silane coupling agent can be omitted, the process can be simplified.
- (B) an inorganic filler it is preferable to use a resin composition containing the monodisperse alumina having an average particle diameter D 50 is 3 ⁇ m or 5 ⁇ m or less. Thereby, the variation in the content of the (C) silane coupling agent that is liberated in the resin composition among products is suppressed, and the variation in characteristics between products is suppressed.
- the present invention it is possible to realize a metal base substrate having a sufficient insulation resistance and excellent adhesion to the metal base substrate and heat cycle performance. Moreover, since the resin composition of this invention is excellent in adhesiveness with a metal plate, in a long-term insulation reliability test, it can show favorable insulation resistance and can have insulation reliability.
- the resin composition of the present invention maintains an excellent point such as a conventional heat dissipating property and an excellent electrical insulation property such as a withstand voltage by including an inorganic filler.
- the stress relaxation property is improved.
- the resin composition, resin-coated metal foil, and metal base substrate of the present invention can be used for substrates used in harsh environments such as automobile engine rooms, and are very useful industrially.
- Example A The raw materials used in Examples and Comparative Examples are as follows. (1) Bisphenol A type phenoxy resin (Mitsubishi Chemical, 1255, weight average molecular weight 4.8 ⁇ 10 4 ) (2) Bisphenol A type phenoxy resin (manufactured by Nippon Steel Chemical Co., Ltd., YP-55U, weight average molecular weight 4.2 ⁇ 10 4 ) (3) Bisphenol A type epoxy resin (made by DIC, 850S, epoxy equivalent 190) (4) Bisphenol A type epoxy resin (Mitsubishi Chemical, 1001, epoxy equivalent 475) (5) Dicyandiamide (Degussa) (6) Phenol novolac resin (manufactured by DIC, TD-2010, hydroxyl equivalent 105) (7) 2-Phenylimidazole (manufactured by Shikoku Chemicals, 2PZ) (8) ⁇ -Glycidoxypropyltritomexisilane (Shin-Etsu Silicone, KBM-403) (9) Aluminum
- Example A1 Preparation of resin varnish Bisphenol A type phenoxy resin (Mitsubishi Chemical, 1255, weight average molecular weight 4.8 ⁇ 10 4 ) 22.0% by weight, bisphenol A type epoxy resin (DIC, 850S, epoxy equivalent 190) 10.0 wt%, bisphenol A type epoxy resin (Mitsubishi Chemical, 1001, epoxy equivalent 475) 15.0 parts, 2-phenylimidazole (Shikoku Chemicals 2PZ) 1.0 part, ⁇ as silane coupling agent -Dissolve 2.0 parts by weight of glycidoxypropyltrimethoxysilane (KBM-403 made by Shin-Etsu Silicone) and 50.0 parts by weight of aluminum hydroxide (made by Showa Denko, HP-360, particle size: 3.0 ⁇ m) in cyclohexanone. The mixture was mixed and stirred using a high-speed stirring device to obtain a varnish having a resin composition of 70% by weight based on the solid content.
- bisphenol A type epoxy resin DIC
- Examples A2 to A11 and Comparative Examples A1 to A6 A resin varnish was prepared in the same manner as in Example A1, except that a resin varnish was prepared according to the recipes shown in Tables 1 and 2, and a copper foil with a resin and a metal base substrate were prepared. Moreover, each evaluation of the following was performed about the metal base substrate obtained by each Example and the comparative example. The evaluation results are shown in Tables 1 and 2.
- Example B The raw materials used in Examples and Comparative Examples are as follows. (1) Bisphenol A type phenoxy resin (Mitsubishi Chemical, 1255, weight average molecular weight 4.8 ⁇ 10 4 ) (2) Bisphenol A type phenoxy resin (manufactured by Nippon Steel Chemical Co., Ltd., YP-55U, weight average molecular weight 4.2 ⁇ 10 4 ) (3) Bisphenol A type epoxy resin (made by DIC, 850S, epoxy equivalent 190) (4) Bisphenol F type epoxy resin (DIC, 830S, epoxy equivalent 170) (5) Dicyandiamide (Degussa) (6) 2-Phenylimidazole (manufactured by Shikoku Chemicals, 2PZ) (7) ⁇ -Glycidoxypropyltritomexisilane (Shin-Etsu Silicone, KBM-403) (8) Alumina (Nippon Light Metal, LS-210, average particle size 3.6 ⁇ m) (9) Bisphenol A type phenoxy resin
- Example B1 Preparation of resin varnish Bisphenol A type phenoxy resin (Mitsubishi Chemical, 1255, weight average molecular weight 4.8 ⁇ 10 4 ) 6.7% by weight, bisphenol A type epoxy resin (DIC, 850S, epoxy equivalent 190) 8.4 wt%, dicyandiamide (Degussa) 0.4 wt%, 2-phenylimidazole (Shikoku Chemicals 2PZ) 0.1 wt%, ⁇ -glycidoxypropyltrimethoxysilane (Shin-Etsu Silicone) as silane coupling agent KBM-403 manufactured by 1.0% by weight and alumina (manufactured by Nippon Light Metal Co., Ltd., LS-210B, particle size 3.6 ⁇ m) 83.4% by weight were dissolved and mixed in cyclohexanone, and stirred using a high-speed stirrer. The composition obtained a varnish having a solid content of 70% by weight.
- bisphenol A type epoxy resin
- Examples B2 to B6 and Comparative Examples B1 to B6 A resin varnish was prepared in the same manner as in Example 1 except that a resin varnish was prepared according to the recipe shown in Table 3 and Table 4, and a copper foil with a resin and a metal base substrate were prepared. Moreover, each evaluation of the following was performed about the metal base substrate obtained by each Example and the comparative example. The evaluation results are shown in Tables 3 and 4.
- Peel strength 100 mm x 20 mm test pieces were prepared from the metal base substrates obtained in the examples and comparative examples, and the peel strength between the metal base substrate and the resin layer at 23 ° C was measured.
- the peel strength measurement was performed according to JIS C 6481.
- Insulation resistance measurement The insulation resistance value of the resin layer of the metal base substrate was measured using an insulation resistance measuring instrument. The measurement was performed by applying an alternating voltage between the copper foil and the aluminum plate at room temperature. The evaluation was performed in two types: measurement without pretreatment and measurement after 121 ° C., 100%, (PCT treatment) for 96 hours.
- Thermal conductivity (W / m ⁇ K) density (kg / m 3 ) ⁇ specific heat (kJ / kg ⁇ K) ⁇ thermal diffusivity (m 2 / S) ⁇ 1000
- the metal base substrates obtained in Examples A1 to A11 and B1 to B6 had a good balance of adhesion between the metal plate and the resin layer, heat cycle characteristics, and insulation characteristics.
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Abstract
Description
[1]
金属板、金属箔、及び前記金属板と前記金属箔との間に配置された樹脂層を備える金属ベース基板のうち前記樹脂層の形成に用いる樹脂組成物であって、
(A)重量平均分子量が4.0×104~4.9×104のビスフェノールA型フェノキシ樹脂と、
(B)無機充填剤と、
(C)シランカップリング剤と、を含み、
前記樹脂組成物の合計量100質量%に対する前記(C)シランカップリング剤の含有量を、c質量%とし、
前記樹脂組成物の合計量100質量%に対する前記(B)無機充填剤の含有量をb質量%としたとき、
5×10-2<c-(b×1/100)<11
を満たす樹脂組成物。
[2]
[1]に記載の樹脂組成物において、
前記金属板がアルミニウム板である、樹脂組成物。
[3]
[1]または[2]に記載の樹脂組成物において、
前記無機充填剤が水酸化アルミニウムまたはアルミナである、樹脂組成物。
[4]
[1]から[3]のいずれか1項に記載の樹脂組成物において、
前記フェノキシ樹脂の含有量は、前記樹脂組成物の合計値100質量%に対して10重量%以上40重量%以下である、樹脂組成物。
[5]
[1]から[4]のいずれか1項に記載の樹脂組成物において、
エポキシ樹脂をさらに含む、樹脂組成物。
[6]
[5]に記載の樹脂組成物において、
前記エポキシ樹脂が(D)ビスフェノールA型エポキシ樹脂である、樹脂組成物。
[7]
金属板、金属箔、及び前記金属板と前記金属箔との間に配置された樹脂層を備え、
前記樹脂層が[1]から[6]のいずれか1項に記載の樹脂組成物である、
金属ベース基板。
[8]
[7]に記載の金属ベース基板において、
121℃、湿度100%、96時間の条件でのPCT処理後の絶縁抵抗値/PCT処理前の絶縁抵抗値が10-3以上10-1以下である、金属ベース基板。
[9]
シランカップリング剤で表面処理されていない金属板を準備する工程と、
前記シランカップリング剤で表面処理されていない金属板の少なくとも一面上に樹脂層を形成する工程と、
前記樹脂層上に金属箔を形成する工程と、を有し、
前記樹脂層は、
(A)重量平均分子量が4.0×104~4.9×104のビスフェノールA型フェノキシ樹脂と、
(B)無機充填剤と、
(C)シランカップリング剤と、を含み、
前記樹脂組成物の合計量100質量%に対する前記(C)シランカップリング剤の含有量を、c質量%とし、
前記樹脂組成物の合計量100質量%に対する前記(B)無機充填剤の含有量をb質量%としたとき、
5×10-2<c-(b×1/100)<11
を満たす、金属ベース基板の製造方法。
[10]
[9]に記載の金属ベース基板の製造方法において、
前記(B)無機充填剤が、平均粒径D50が3μm以上5μm以下である単分散のアルミナを含む、金属ベース基板の製造方法。
本発明の樹脂組成物は、金属板、金属箔、及びこれらの金属板と金属箔との間に配置された樹脂層を備える金属ベース基板のうち当該樹脂層の形成に用いる樹脂組成物である。このような樹脂組成物は、(A)重量平均分子量が4.0×104~4.9×104のビスフェノールA型フェノキシ樹脂、(B)無機充填剤、及び(C)シランカップリング剤を含み、かつ、5×10-2<c-(b×1/100)<11を満たすことにより特定される。
以下、詳述する。
(A)フェノキシ樹脂を樹脂層に含むことにより、樹脂層と金属板との密着性が向上するだけでなく、プレス時に、流動性が改善され、ボイド等なく成形することが可能となる。また分子量が4.0×104~4.9×104であることにより、次の効果が得られる。第1に、低弾性率化が可能となり、金属ベース基板に用いると応力緩和性にも優れることになる。例えば、本発明の樹脂組成物を用いた金属ベース基板を利用して、電子部品等を実装した半導体装置を製造した場合、当該半導体装置は、急激な加熱/冷却の環境下においても、電子部品と金属ベース基板を接合する半田接合部、またはその近傍で、クラック等の不良が発生することが抑制されることになる。
なお、樹脂組成物全体とは、例えば、溶剤等を用いたワニスの場合は、溶剤を除く固形を意味し、液状エポキシ、カップリング剤等の液状成分は、樹脂組成物に含まれる。
結晶性シリカまたは非晶性シリカは、プレッシャークッカテスト等の水蒸気雰囲気下で絶縁性が高く、金属、アルミ線、アルミ板等の腐食が少ない点で好適である。
一方、難燃性の観点からは、水酸化アルミニウム、水酸化マグネシウムが好ましい。
さらに、溶融粘度調整やチクトロピック性の付与の目的においては、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグシウム、アルミナ、結晶性シリカ、非晶性シリカが好ましい。
上記中、c(質量%)は、樹脂組成物の合計量100質量%に対する(C)シランカップリング剤の含有量を示し、b(質量%)は、樹脂組成物の合計量100質量%に対する(B)無機充填剤の含有量を示すものとする。
上記式中[c-(b×1/100)]は、(B)無機充填剤の表面に付着せずに、樹脂組成物中に存在している(C)シランカップリング剤(すなわち、樹脂組成物中の遊離している(C)シランカップリング剤)の含有量を示す。
まず、(C)シランカップリング剤は、分子内に有機材料及び無機材料と結合する官能基を合わせ持っている。この(C)シランカップリング剤を介して、無機材料と有機材料とが結合されることになる。
(C)シランカップリング剤は、本技術分野において、(B)無機充填剤と樹脂組成物との接着に用いられており、(B)無機充填剤の表面に処理されることになる。このため、(C)シランカップリング剤の処理量((C)シランカップリング剤の樹脂組成物全体に対する含有量)は、(B)無機充填剤の含有量に応じて、決定されることになる。
通常、(C)シランカップリング剤の処理量は、(B)無機充填剤の合計量100質量%に対して0.5~1質量%程度であることが知られている。
したがって、上記式中の(b×1/100)は、(B)無機充填剤に対する(C)シランカップリング剤の一般的な処理量を示す。そして、(C)シランカップリング剤の全量cから、(C)シランカップリング剤の処理量(b×1/100)を差し引くことにより、前述のとおり、樹脂組成物中の遊離している(C)シランカップリング剤の含有量[c-(b×1/100)]を見積もることができる。
本発明において、樹脂組成物中の遊離している(C)シランカップリング剤の含有量を特定の範囲とすることにより、金属板と樹脂層との密着性、及びヒートサイクル特性のバランスを実現することができる。すなわち、樹脂組成物中の遊離している(C)シランカップリング剤の含有量として、下限値は好ましくは5×10-2質量%以上、より好ましくは1×10-1質量%以上、さらに好ましくは5×10-1質量%以上であり、上限量は、特に限定されないが、例えば、好ましくは11質量%以下であり、より好ましくは10質量%以下であり、さらに好ましくは9質量%以下である。
また、樹脂組成物中の遊離している(C)シランカップリング剤の含有量を上限値以下とすることにより、シランカップリング剤が加水分解されて、半田耐熱性が低下することが抑制される。
これに対して、本発明においては、[c-(b×1/100)]>0.05となる。これにより、金属板と樹脂層との密着性を高め、金属ベース基板の絶縁性特性を向上させることが可能となる。
前述した樹脂組成物を用いた樹脂付き金属箔は、樹脂組成物からなる樹脂層を金属箔上に形成することにより得られる。
まず、樹脂層を形成するため本発明の樹脂組成物を、アセトン、メチルエチルケトン、メチルイソブチルケトン、トルエン、酢酸エチル、シクロヘキサン、ヘプタン、シクロヘキサンシクロヘキサノン、テトラヒドロフラン、ジメチルホルムアミド、ジメチルアセトアミド、ジメチルスルホキシド、エチレングリコール、セルソルブ系、カルビトール系、アニソール等の有機溶剤中で、超音波分散方式、高圧衝突式分散方式、高速回転分散方式、ビーズミル方式、高速せん断分散方式、および自転公転式分散方式などの各種混合機を用いて溶解、混合、撹拌して樹脂ワニスを作製する。
塗工装置は、特に限定されないが、例えば、ロールコーター、バーコーター、ナイフコーター、グラビアコーター、ダイコーター、コンマコーターおよびカーテンコーターなどを用いることができる。これらの中でも、ダイコーター、ナイフコーター、およびコンマコーターを用いる方法が好ましい。これにより、ボイドがなく、均一な絶縁層の厚みを有する樹脂付き金属箔を効率よく製造することができる。
このような金属ベース基板に半導体素子、抵抗部品等を表面実装した場合、部材間の歪が大きくなることを抑制し、十分な熱衝撃信頼性を得ることができる。また、樹脂層の厚さを250μmとすることにより、金属ベース基板の表面実装部分における歪量が少なくなり、良好な熱衝撃信頼性を得ることができるとともに、熱抵抗が低減し十分な放熱性を得ることができる。
また、金属箔としては、キャリア箔付き極薄金属箔を用いることもできる。キャリア箔付き極薄金属箔とは、剥離可能なキャリア箔と極薄金属箔とを張り合わせた金属箔である。キャリア箔付き極薄金属箔を用いることで絶縁層の両面に極薄金属箔層を形成できることから、例えば、セミアディティブ法などで回路を形成する場合、無電解メッキを行うことなく、極薄金属箔を直接給電層として電解メッキすることで、回路を形成後、極薄銅箔をフラッシュエッチングすることができる。キャリア箔付き極薄金属箔を用いることによって、厚さ10μm以下の極薄金属箔でも、例えばプレス工程での極薄金属箔のハンドリング性の低下や、極薄銅箔の割れや切れを防ぐことができる。
本発明の金属ベース基板は、金属板、金属箔及び、これらの金属板と金属箔との間に配置された樹脂層を備え、当該樹脂層は上記の樹脂組成物で構成されるものである。
このような金属ベース基板は、例えば、121℃、湿度100%、96時間の条件でのPCT処理後の絶縁抵抗値/PCT処理前の絶縁抵抗値が10-3以上10-1以下であることにより特定されてもよい。前述の通り樹脂組成物が(A)フェノキシ樹脂を有しているので、本発明の金属ベース基板は絶縁特性に優れることになる。
多層にする場合は、前記金属ベース基板に回路形成後、さらに樹脂付き金属箔を積層し、前記同様エッチングすることにより回路形成することにより多層の金属ベース基板を得ることができる。なお、最外層にソルダーレジストを形成し、露光・現像により半導体素子や電子部品が実装できるよう接続用電極部を露出させても良い。
このように、本発明は、樹脂組成物中に遊離している(C)シランカップリング剤の含有量を充分に確保し、さらに高分子の(A)フェノキシ樹脂を併用することにより、金属板にシランカップリング剤を処理する工程を省略することができるので、工程の簡略化を図ることができる。
また、本発明の樹脂組成物は、金属板との密着性に優れるため、長期絶縁信頼性試験において、良好な絶縁抵抗を示し、絶縁信頼性を有することができる。
実施例及び比較例において用いた原材料は以下の通りである。
(1)ビスフェノールA型フェノキシ樹脂(三菱化学製、1255、重量平均分子量4.8×104)
(2)ビスフェノールA型フェノキシ樹脂(新日鐵化学製、YP-55U、重量平均分子量4.2×104)
(3)ビスフェノールA型エポキシ樹脂(DIC製、850S、エポキシ当量190)
(4)ビスフェノールA型エポキシ樹脂(三菱化学製、1001、エポキシ当量475)
(5)ジシアンジアミド(デグサ製)
(6)フェノールノボラック樹脂(DIC製、TD-2010、水酸基当量105)
(7)2-フェニルイミダゾール(四国化成製、2PZ)
(8)γ-グリシドキシプロピルトリトメキシシラン(信越シリコーン製、KBM-403)
(9)水酸化アルミニウム(昭和電工製、HP-360)
(10)アルミナ(電気化学工業製、AS-50)
(11)窒化ホウ素(電気化学工業製、SPG-3)
(12)ビスフェノールA型フェノキシ樹脂(新日鐵化学製、YD-020H、重量平均分子量1.0×104)
(13)ビスフェノールA型フェノキシ樹脂(新日鐵化学製、YP-50、重量平均分子量5.0×104)
(14)シリコーン樹脂(モメンティブパフォーマンズ製XE14-A0425(A)、ポリアルキルアルケニルシロキサン)
(15)シリコーン樹脂(モメンティブパフォーマンズ製XE14-A0425(B)、ポリアルキル水素シロキサン)
(1)樹脂ワニスの調製
ビスフェノールA型フェノキシ樹脂(三菱化学製、1255、重量平均分子量4.8×104)22.0重量%、ビスフェノールA型エポキシ樹脂(DIC製、850S、エポキシ当量190)10.0重量%、ビスフェノールA型エポキシ樹脂(三菱化学製、1001、エポキシ当量475)15.0重量部、2-フェニルイミダゾール(四国化成製2PZ)1.0重量部、シランカップリング剤としてγ―グリシドキシプロピルトリメトキシシラン(信越シリコーン製KBM-403)2.0重量部、水酸化アルミニウム(昭和電工製、HP-360、粒径3.0μm)50.0重量部をシクロヘキサノンに溶解・混合させ、高速撹拌装置を用い撹拌して、樹脂組成物が固形分基準で70重量%のワニスを得た。
金属箔として、厚さ70μmの銅箔(古河サーキットホイル製、GTSMP)を用い、銅箔の粗化面に樹脂ワニスをコンマコーターにて塗布し、100℃で3分、150℃で3分加熱乾燥し、樹脂厚100μmの樹脂付き銅箔を得た。
前記樹脂付き銅箔と金属板として2mm厚のアルミニウム板を張り合わせ、真空プレスで、プレス圧30kg/cm2で80℃30分、200℃90分の条件下で、プレスし金属ベース基板を得た。
表1、及び表2に記載の配合表に従い樹脂ワニスを調製した以外は、実施例A1と同様に樹脂ワニスを調製し、樹脂付き銅箔、金属ベース基板を作製した。
また、各実施例および比較例により得られた金属ベース基板について、次の各評価を行った。評価結果を表1、及び表2に示す。
実施例及び比較例において用いた原材料は以下の通りである。
(1)ビスフェノールA型フェノキシ樹脂(三菱化学製、1255、重量平均分子量4.8×104)
(2)ビスフェノールA型フェノキシ樹脂(新日鐵化学製、YP-55U、重量平均分子量4.2×104)
(3)ビスフェノールA型エポキシ樹脂(DIC製、850S、エポキシ当量190)
(4)ビスフェノールF型エポキシ樹脂(DIC製、830S、エポキシ当量170)
(5)ジシアンジアミド(デグサ製)
(6)2-フェニルイミダゾール(四国化成製、2PZ)
(7)γ-グリシドキシプロピルトリトメキシシラン(信越シリコーン製、KBM-403)
(8)アルミナ(日本軽金属製、LS-210、平均粒径3.6μm)
(9)ビスフェノールA型フェノキシ樹脂(新日鐵化学製、YD-020H、重量平均分子量1.0×104)
(10)ビスフェノールA型フェノキシ樹脂(新日鐵化学製、YP-50、重量平均分子量5.0×104)
(1)樹脂ワニスの調製
ビスフェノールA型フェノキシ樹脂(三菱化学製、1255、重量平均分子量4.8×104)6.7重量%、ビスフェノールA型エポキシ樹脂(DIC製、850S、エポキシ当量190)8.4重量%、ジシアンジアミド(デグサ製)0.4重量%、2-フェニルイミダゾール(四国化成製2PZ)0.1重量%、シランカップリング剤としてγ―グリシドキシプロピルトリメトキシシラン(信越シリコーン製KBM-403)1.0重量%、アルミナ(日本軽金属製、LS-210B、粒径3.6μm)83.4重量%をシクロヘキサノンに溶解・混合させ、高速撹拌装置を用い撹拌して、樹脂組成物が固形分基準で70重量%のワニスを得た。
金属箔として、厚さ70μmの銅箔(古河サーキットホイル製、GTSMP)を用い、銅箔の粗化面に樹脂ワニスをコンマコーターにて塗布し、100℃で3分、150℃で3分加熱乾燥し、樹脂厚100μmの樹脂付き銅箔を得た。
前記樹脂付き銅箔と金属板として2mm厚のアルミニウム板を張り合わせ、真空プレスで、プレス圧30kg/cm2で80℃30分、200℃90分の条件下で、プレスし金属ベース基板を得た。
表3、及び表4に記載の配合表に従い樹脂ワニスを調製した以外は、実施例1と同様に樹脂ワニスを調製し、樹脂付き銅箔、金属ベース基板を作製した。
また、各実施例および比較例により得られた金属ベース基板について、次の各評価を行った。評価結果を表3、及び表4に示す。
上述の各評価について、評価方法を以下に示す。
前記実施例、及び比較例で得られた金属ベース基板から100mm×20mmの試験片を作製し、23℃における金属ベース基板と樹脂層とのピール強度を測定した。
尚、ピール強度測定は、JIS C 6481に準拠して行った。
得られた金属ベース基板を50mm×50mmにグラインダーソーでカットした後、エッチングにより銅箔を1/4だけ残した試料を作製し、JIS C 6481に準拠して評価した。評価は、前処理をしない場合と、前処理をしない場合と、121℃、100%、(PCT処理)を4時間行った後の場合において、288℃の半田槽に30秒間浸漬した後で外観の異常の有無を調べた。
評価基準:異常なし
:膨れあり(全体的にフクレの箇所がある)
前記金属ベース基板の樹脂層の絶縁抵抗値を、絶縁抵抗測定器を用いて測定した。
測定は、室温において交流電圧を銅箔とアルミニウム板間に印加し、行った。評価は、前処理をしないで測定する場合、および121℃、100%、(PCT処理)を96時間行った後に測定する場合の2種類で行った。
得られた金属ベース基板の密度を水中置換法により測定し、また、比熱をDSC(示差走査熱量測定)により測定し、さらに、レーザーフラッシュ法により熱拡散率を測定した。
そして、熱伝導率を以下の式から算出した。
熱伝導率(W/m・K)=密度(kg/m3)×比熱(kJ/kg・K)×熱拡散率(m2/S)×1000
得られた金属ベース配線基板を、-40℃7分~+125℃7分を1サイクルとして5000回のヒートサイクル試験を行った後、顕微鏡で半田部分のクラックの有無を観察した。半田部分のクラックの発生が10%以上あるものは不良とし、半田クラックの発生が10%未満のものを良好と判定した。
評価基準:良好
:不良(クラック発生率10%以上)
Claims (10)
- 金属板、金属箔、及び前記金属板と前記金属箔との間に配置された樹脂層を備える金属ベース基板のうち前記樹脂層の形成に用いる樹脂組成物であって、
(A)重量平均分子量が4.0×104~4.9×104のビスフェノールA型フェノキシ樹脂と、
(B)無機充填剤と、
(C)シランカップリング剤と、を含み、
前記樹脂組成物の合計量100質量%に対する前記(C)シランカップリング剤の含有量を、c質量%とし、
前記樹脂組成物の合計量100質量%に対する前記(B)無機充填剤の含有量をb質量%としたとき、
5×10-2<c-(b×1/100)<11
を満たす樹脂組成物。 - 請求項1に記載の樹脂組成物において、
前記金属板がアルミニウム板である、樹脂組成物。 - 請求項1または2に記載の樹脂組成物において、
前記無機充填剤が水酸化アルミニウムまたはアルミナである、樹脂組成物。 - 請求項1から3のいずれか1項に記載の樹脂組成物において、
前記フェノキシ樹脂の含有量は、前記樹脂組成物の合計値100質量%に対して10重量%以上40重量%以下である、樹脂組成物。 - 請求項1から4のいずれか1項に記載の樹脂組成物において、
エポキシ樹脂をさらに含む、樹脂組成物。 - 請求項5に記載の樹脂組成物において、
前記エポキシ樹脂が(D)ビスフェノールA型エポキシ樹脂である、樹脂組成物。 - 金属板、金属箔、及び前記金属板と前記金属箔との間に配置された樹脂層を備え、
前記樹脂層が請求項1から6のいずれか1項に記載の樹脂組成物である、
金属ベース基板。 - 請求項7に記載の金属ベース基板において、
121℃、湿度100%、96時間の条件でのPCT処理後の絶縁抵抗値/PCT処理前の絶縁抵抗値が10-3以上10-1以下である、金属ベース基板。 - シランカップリング剤で表面処理されていない金属板を準備する工程と、
前記シランカップリング剤で表面処理されていない金属板の少なくとも一面上に樹脂層を形成する工程と、
前記樹脂層上に金属箔を形成する工程と、を有し、
前記樹脂層は、
(A)重量平均分子量が4.0×104~4.9×104のビスフェノールA型フェノキシ樹脂と、
(B)無機充填剤と、
(C)シランカップリング剤と、を含み、
前記樹脂組成物の合計量100質量%に対する前記(C)シランカップリング剤の含有量を、c質量%とし、
前記樹脂組成物の合計量100質量%に対する前記(B)無機充填剤の含有量をb質量%としたとき、
5×10-2<c-(b×1/100)<11
を満たす、金属ベース基板の製造方法。 - 請求項9に記載の金属ベース基板の製造方法において、
前記(B)無機充填剤が、平均粒径D50が3μm以上5μm以下である単分散のアルミナを含む、金属ベース基板の製造方法。
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WO1996031574A1 (fr) * | 1995-04-04 | 1996-10-10 | Hitachi Chemical Company, Ltd. | Adhesif, pellicule adhesive et feuille metallique a envers adhesif |
JP2007246861A (ja) * | 2006-03-20 | 2007-09-27 | Nippon Steel Chem Co Ltd | 樹脂組成物、並びにこの樹脂組成物を用いて得たワニス、フィルム状接着剤及びフィルム状接着剤付き銅箔 |
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