WO2011152204A1 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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Definitions
- the present invention relates to a method for manufacturing a semiconductor device using a small-capacity chip.
- Patent Document 1 When the technique disclosed in Patent Document 1 is used, a large current can be passed by connecting a large number of small-capacity SiC diodes in parallel, but the yield at the time of mounting deteriorates, so the necessary number In order to obtain this semiconductor device, it is necessary to create more semiconductor devices than that.
- a compound semiconductor such as SiC cannot be made large due to substrate quality, and is a small-capacity product.
- a non-defective product that passes the inspection is used for the small-capacity chip mounted on the substrate.
- defects occur at a certain rate even if the non-defective product is used. If the yield in implementing one small capacity chips was a (0 ⁇ a ⁇ 1) , the yield in forming a large current device implements the n small capacity chips becomes a n.
- the yield in forming a large current device implements the n small capacity chips becomes a n.
- An object of the present invention is to provide a semiconductor device manufacturing method capable of visually identifying a defective chip generated in a mounting process and eliminating the defective chip.
- the method for manufacturing a semiconductor device may be characterized in that the semiconductor element is an element including SiC, GaN, or diamond.
- the method for manufacturing a semiconductor device may be characterized in that the semiconductor element is a diode or a transistor.
- the manufacturing method of a semiconductor device may be characterized in that the presence or absence of heat generation of each semiconductor element is detected by a thermography, an infrared microscope, or a temperature sensor.
- a manufacturing method of a semiconductor device is characterized in that each semiconductor element is provided with a thermo label or thermo paint, and the presence or absence of heat generation of each semiconductor element is detected by a change in color of the thermo label or thermo paint. Also good.
- the presence or absence of heat generation in each semiconductor element is detected from the change in the color of the thermolabel or thermopaint attached to each semiconductor element.
- FIG. 1 is an explanatory diagram for explaining an outline of a method of manufacturing a semiconductor device according to a first embodiment.
- the manufacturing method of the semiconductor device according to the present embodiment includes a mounting step (FIG. 1A) for forming a circuit formed by connecting a plurality of SiC semiconductor chips 20 in parallel on the mounting substrate 10 (FIG. 1A), and the mounted SiC. And an inspection step (FIG. 1B) for inspecting whether or not a defect has occurred in the semiconductor chip 20.
- the SiC semiconductor chip 20 is a small capacity chip having a current capacity of about 1 to 10A. By connecting a plurality of SiC semiconductor chips 20 in parallel on the mounting substrate 10, a semiconductor device (for example, a power device) capable of increasing the current is realized.
- the SiC semiconductor chip 20 has a size of about 2 mm square, and is arranged on the mounting substrate 10 at intervals of several millimeters in a linear or matrix form.
- As a method for mounting the SiC semiconductor chip 20 on the mounting substrate 10 an appropriate method can be adopted depending on the type of the SiC semiconductor chip 20.
- FIG. 2 is a schematic diagram showing a mounting example of the SiC semiconductor chip 20. In the example shown in FIG.
- the SiC semiconductor chip 20 to be mounted is a SiC diode that has a front surface electrode 21 and a back surface electrode 22 and a current flows in the thickness direction.
- the mounting substrate 10 may be a substrate in which printed wiring (metal surfaces 12 and 13) is formed on the front and back surfaces of an insulating substrate 11 such as silicon nitride or aluminum nitride.
- the back electrode 22 of the SiC diode is fixed to the metal surface 12 on the surface side of the mounting substrate 10 by soldering or conductive resin, and the surface electrode 21 of the SiC diode is fixed to the metal surface 13 on the back surface side of the mounting substrate 10 with a wire bond 23.
- a plurality of SiC diodes can be mounted in parallel on the mounting substrate 10.
- the mounting substrate 10 on which the SiC diode is mounted is accommodated in, for example, a protective case 30 with an upper lid 31, and the space between the mounting substrate 10 and the protective case 30 has properties such as heat dissipation and moisture resistance.
- Gel 40 is filled.
- the number of SiC semiconductor chips 20 to be mounted on the mounting substrate 10 is arbitrary, but it is desirable to mount as many SiC semiconductor chips 20 as possible in advance so as to satisfy a required current capacity. 2 and 3, the configuration in which the SiC diode is mounted as the SiC semiconductor chip 20 has been described. However, the mounted chip is not limited to the diode but may be a transistor.
- the defective chip is electrically shorted between electrodes (between terminals) and becomes defective.
- the defective chip is identified using this. Specifically, first, a voltage is applied between the electrodes (between terminals) of each SiC semiconductor chip 20. Since a defective chip is short-circuited between electrodes (between terminals), when a voltage is applied, a current of about several milliamperes flows to generate heat. By detecting this heat generation, a defective chip is identified.
- a thermal imaging device 50 such as a thermography or infrared microscope that outputs a temperature distribution of an object as an image (image) can be used.
- the thermal imaging apparatus 50 having a spatial resolution of 1 mm or less may be used.
- the defective chip rises by about 5 to 10 ° C. as compared to the temperature (room temperature) of the surrounding mounting substrate 10 and other normal SiC semiconductor chips 20, and therefore is less than about 1 ° C.
- a thermal imaging apparatus 50 having a temperature resolution may be used. In the inspection process, the upper lid 31 of the protective case 30 is removed in order to take a temperature distribution image with the thermal imaging device 50.
- Defective chips can be identified by analyzing the temperature distribution image output from the thermal imaging apparatus 50 and specifying an image region where a temperature rise is recognized on the mounting substrate 10.
- the wiring of the defective chip is removed and electrically insulated so that it functions normally as a semiconductor device using another SiC semiconductor chip 20. That is, this semiconductor device is composed of other SiC semiconductor chips 20 excluding defective chips.
- the electrodes (between terminals) of any one of the mounted SiC semiconductor chips 20 are short-circuited and become defective, they do not function as a target semiconductor device.
- the SiC semiconductor chip 20 is wasted, in the present embodiment, since only defective chips can be identified and eliminated, it is possible to avoid wasting other normal SiC semiconductor chips 20 and yield in mounting. Can be improved.
- the removal of defective chips is performed by electrically insulating the SiC semiconductor chip 20 identified as defective from other normal SiC semiconductor chips 20. For this reason, the wiring of the SiC semiconductor chip 20 identified as defective is cut.
- the wiring may be cut by a human hand or using a known device such as the laser processing device 110.
- each hardware unit is controlled by the system control unit 100.
- the system control unit 100 is connected to a display 152 that displays a temperature distribution image captured by the thermal imaging apparatus 50 and information to be notified to the operator, and an operation unit 151 that receives an operation by the operator.
- the thermal imaging apparatus 50 detects the surface temperature of the mounting substrate 10 placed on the XY stage 120, and generates and outputs a temperature distribution image in which the temperature distribution of the object is represented by color.
- the temperature distribution image output from the thermal video apparatus 50 is temporarily stored in the image memory 51.
- the position adjustment Prior to photographing the mounting board 10 by the thermal imaging apparatus 50, the position adjustment is performed using the XY stage 120 so that the positional relationship between the thermal imaging apparatus 50 and the mounting board 10 to be inspected is constant.
- the image analysis unit 52 performs image analysis on the temperature distribution image temporarily stored in the image memory 51. Specifically, a process for extracting an image area whose temperature is 5 to 10 ° C. higher than the surroundings from the temperature distribution image, and a process for specifying the position of the extracted image area in the temperature distribution image are performed. .
- the specified position may be an absolute position in the temperature distribution image, or may be a relative position with respect to this reference position by providing some reference position.
- the image analysis unit 52 notifies the defect determination unit 53 of the extraction result of the image region, and notifies the system control unit 100 of position information indicating the position of the image region.
- the defect determination unit 53 determines whether or not a defective chip is included in the mounting substrate 10 to be inspected based on the notification from the image analysis unit 52.
- the defect determination unit 53 detects the mounting substrate 10 to be inspected. If the extraction result notified from the image analysis unit 52 indicates that the image area has not been extracted, it is determined that there is no defective chip.
- the defect determination unit 53 notifies the system control unit 100 of the determination result.
- the system control unit 100 controls the XY stage 120 based on the position information notified from the image analysis unit 52 when receiving a determination result indicating that a defective chip exists on the mounting substrate 10 from the defect determination unit 53.
- a control command is generated and sent to the stage control unit 121.
- the stage control unit 121 controls the XY stage 120 based on the control command, and adjusts the position so that the mounting substrate 10 is at a position facing the laser processing apparatus 110.
- the system control unit 100 sends a control command to the processing control unit 111 and finely adjusts the position of the mounting substrate 10 by controlling the XY stage 120 in order to cut the wiring of the defective chip, and the laser processing apparatus 110.
- the wiring is cut by irradiating the target wiring portion with laser.
- FIG. 5 is a flowchart showing a method for manufacturing a semiconductor device according to the present embodiment.
- the SiC semiconductor chip 20 is mounted on the mounting substrate 10 (step S1).
- mounting on the mounting substrate 10 is performed so that the plurality of SiC semiconductor chips 20 are connected in parallel.
- a process of accommodating the mounting board 10 in the protective case 30, a process of filling the gel 40 for protecting the chip on the mounting board 10, and the like are performed.
- the defect determination unit 53 determines whether or not there is a SiC semiconductor chip 20 having a higher temperature than the surface of the mounting substrate 10 or other SiC semiconductor chips 20. By determining whether or not there is a defective chip (step S5). When it is determined that there is no defective chip in the mounted SiC semiconductor chip 20 (S5: NO), the processing according to this flowchart is terminated.
- thermo imaging apparatus 50 such as a thermography or an infrared microscope
- a temperature indicating material such as a thermo label or a thermo paint whose color changes due to the above can be used.
- a method for identifying a defective chip using a temperature indicating material such as a thermo label or thermo paint will be described.
- FIG. 6 is an explanatory diagram for explaining the outline of the method for manufacturing the semiconductor device according to the second embodiment.
- the semiconductor device manufacturing method according to the second embodiment is similar to the first embodiment in that a mounting step (on the mounting substrate 10) is formed on the mounting substrate 10 by connecting a plurality of SiC semiconductor chips 20 in parallel. 6 (a)) and an inspection process (FIG. 6 (b)) for inspecting whether or not a defect has occurred in the mounted SiC semiconductor chip 20.
- the mounting step includes a step of attaching a temperature indicating material 60 such as a thermo label or thermo paint to each SiC semiconductor chip 20 before or after mounting of the SiC semiconductor chip 20.
- a temperature indicating material 60 such as a thermo label or thermo paint
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Abstract
Description
第1の実施の形態
図1は、第1の実施の形態に係る半導体装置の製造方法の概略を説明する説明図である。本実施の形態に係る半導体装置の製造方法は、複数のSiC半導体チップ20を並列に接続してなる回路を実装基板10上に形成する実装工程(図1(a))と、実装されたSiC半導体チップ20に不良が発生したか否かを検査する検査工程(図1(b))とを含む。
第1の実施の形態では、サーモグラフィ、赤外線顕微鏡等の熱映像装置50を用いて不良チップを同定する方法を説明したが、不良チップでの発熱を検知する手段として、発熱により色が変化するサーモラベルやサーモペイント等の示温材を用いることができる。本実施の形態では、サーモラベルやサーモペイント等の示温材を用いて不良チップを同定する方法について説明する。
不良チップでの発熱を検知する手段として、サーモグラフィ、赤外線顕微鏡等の熱映像装置50、サーモラベルやサーモペイント等の示温材60の他に、熱電対、サーミスタ等を利用した温度センサを用いることも可能である。本実施の形態では、熱電対、サーミスタ等を利用した温度センサを用いて不良チップを同定する方法について説明する。
20 SiC半導体チップ
30 保護ケース
50 熱映像装置
60 示温材
70 温度センサ
Claims (5)
- 複数の半導体素子を並列に接続してなる回路を基板上に形成する工程と、前記回路を構成する半導体素子を検査する検査工程とを含む半導体装置の製造方法において、
前記検査工程は、
前記基板上に形成した回路に含まれる各半導体素子に電圧を印加する工程と、
電圧を印加したことに伴う各半導体素子の発熱の有無を検知する工程と、
発熱を検知した半導体素子と他の半導体素子との間の接続を切断する工程と
を含む、半導体装置の製造方法。 - 前記半導体素子は、SiC、GaN、又はダイヤモンドを含む素子である、請求項1に記載の半導体装置の製造方法。
- 前記半導体素子は、ダイオード又はトランジスタである、請求項2に記載の半導体装置の製造方法。
- 各半導体素子の発熱の有無をサーモグラフィ、赤外線顕微鏡、又は温度センサにより検知する、請求項1から請求項3の何れか1つに記載の半導体装置の製造方法。
- 各半導体素子にサーモラベル又はサーモペイントを付し、該サーモラベル又はサーモペイントの色の変化により各半導体素子の発熱の有無を検知する、請求項1から請求項3の何れか1つに記載の半導体装置の製造方法。
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CN2011800257354A CN102906563A (zh) | 2010-06-03 | 2011-05-17 | 半导体装置的制造方法 |
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EP2869341A4 (en) * | 2012-06-28 | 2015-05-06 | Sumitomo Electric Industries | SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD |
JP2015129725A (ja) * | 2014-01-09 | 2015-07-16 | 日本写真印刷株式会社 | 微細配線短絡箇所の特定装置、微細配線短絡箇所の修理装置、微細配線短絡箇所の特定方法、及び微細配線短絡箇所の修理方法 |
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JP2013214596A (ja) * | 2012-04-02 | 2013-10-17 | Sumitomo Electric Ind Ltd | 半導体デバイス |
CN102798012A (zh) * | 2012-07-31 | 2012-11-28 | 苏州晶雷光电照明科技有限公司 | 耐用型led灯泡 |
JP6123500B2 (ja) * | 2013-06-05 | 2017-05-10 | 住友電気工業株式会社 | 半導体モジュール |
CN105489521B (zh) * | 2014-10-09 | 2019-08-23 | 北京北方华创微电子装备有限公司 | 一种测温晶片及测温晶片的制备方法 |
CN110736909B (zh) * | 2019-10-18 | 2022-09-20 | 北京华峰测控技术股份有限公司 | 半导体器件封装检测方法、计算机设备及可读存储介质 |
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JPH06207914A (ja) * | 1993-01-11 | 1994-07-26 | Hitachi Ltd | 欠陥検出方法と装置および赤外線検出方法と装置 |
JP2001024204A (ja) * | 1999-07-06 | 2001-01-26 | Canon Inc | 太陽電池モジュールの検査装置ならびに検査方法 |
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JP2015129725A (ja) * | 2014-01-09 | 2015-07-16 | 日本写真印刷株式会社 | 微細配線短絡箇所の特定装置、微細配線短絡箇所の修理装置、微細配線短絡箇所の特定方法、及び微細配線短絡箇所の修理方法 |
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