WO2011152104A1 - Tôle en un alliage à base de cu-co-si et son procédé de production - Google Patents

Tôle en un alliage à base de cu-co-si et son procédé de production Download PDF

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Publication number
WO2011152104A1
WO2011152104A1 PCT/JP2011/057216 JP2011057216W WO2011152104A1 WO 2011152104 A1 WO2011152104 A1 WO 2011152104A1 JP 2011057216 W JP2011057216 W JP 2011057216W WO 2011152104 A1 WO2011152104 A1 WO 2011152104A1
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mass
copper alloy
plating
rolling
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PCT/JP2011/057216
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English (en)
Japanese (ja)
Inventor
寛 桑垣
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Jx日鉱日石金属株式会社
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Application filed by Jx日鉱日石金属株式会社 filed Critical Jx日鉱日石金属株式会社
Priority to EP11789514.4A priority Critical patent/EP2578708A4/fr
Priority to US13/581,715 priority patent/US20130092297A1/en
Priority to CN201180003593.1A priority patent/CN102666890B/zh
Publication of WO2011152104A1 publication Critical patent/WO2011152104A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper

Definitions

  • the present invention relates to a Cu—Co—Si based alloy plate which is a precipitation hardening type copper alloy suitable for use in various electronic components, and more particularly to a Cu—Co—Si based alloy plate excellent in uniform adhesion of plating.
  • Copper alloys for electronic materials used in various electronic parts such as connectors, switches, relays, pins, terminals, and lead frames are required to have both high strength and high conductivity (or thermal conductivity) as basic characteristics. Is done. In recent years, high integration and miniaturization / thinning of electronic components have been rapidly progressing, and the level of demand for copper alloys used in electronic device components has been increased accordingly.
  • the amount of precipitation hardening type copper alloys is increasing instead of conventional solid solution strengthened copper alloys such as phosphor bronze and brass as copper alloys for electronic materials.
  • precipitation-hardened copper alloys by aging the supersaturated solid solution that has undergone solution treatment, fine precipitates are uniformly dispersed, increasing the strength of the alloy and reducing the amount of solid solution elements in the copper. Electrical conductivity is improved. For this reason, a material excellent in mechanical properties such as strength and spring property and having good electrical conductivity and thermal conductivity can be obtained.
  • Ni-Si copper alloys commonly called Corson alloys
  • Corson alloys are representative copper alloys that have relatively high electrical conductivity, strength, and bending workability, and are currently being actively developed in the industry. Is one of the alloys that has been made. In this copper alloy, the strength and conductivity can be improved by precipitating fine Ni—Si intermetallic compound particles in the copper matrix.
  • Patent Document 1 for the purpose of a Ni—Si—Co based copper alloy having excellent bending workability, electrical conductivity, strength and stress relaxation resistance, the amounts of Ni, Si, Co and The mutual relationship is controlled, and the average crystal grain size of 20 ⁇ m or less is also described.
  • the first aging annealing temperature is higher than the second aging annealing temperature (paragraphs 0045 to 0047).
  • Patent Document 2 for the purpose of improving the bending workability of the Ni—Si—Co based copper alloy, the distribution state of the second phase particles is controlled to suppress the coarsening of the crystal grains. ing.
  • this patent document for a copper alloy in which cobalt is added to a Corson alloy, the relationship between precipitates having an effect of suppressing the coarsening of crystal grains during high-temperature heat treatment and their distribution state is clarified, and the crystal grain size is controlled. Strength, conductivity, stress relaxation characteristics, and bending workability are improved (paragraph 0016). The smaller the crystal grain size, the better, and it is said that bending workability is improved by setting it to 10 ⁇ m or less (paragraph 0021).
  • Patent Document 3 discloses a copper alloy for electronic materials in which generation of coarse second phase particles in a Ni—Si—Co based copper alloy is suppressed.
  • Patent Document 3 by performing hot rolling and solution treatment under specific conditions, suppressing the generation of coarse second-phase particles, it is said that excellent properties can be achieved (paragraph 0012). .
  • An object of the present invention is to provide a Cu—Co—Si based alloy plate to which base plating, in particular, Ni plating can uniformly adhere.
  • the present inventor has obtained further foundation plating by replacing Ni with Co to form a Cu—Co—Si alloy in a Cu—Ni—Si alloy plate. It was found that the improvement of the adhesion of can be pursued. Furthermore, the surface layer of the Cu—Co—Si based alloy plate tends to be coarser locally than the inside (plate thickness center), and the presence of coarsened crystals on the surface makes it possible to increase the average grain size of the whole. It has been found that even if the diameter is small, the plating (uniform adhesion) property decreases.
  • the present invention has the following configuration.
  • the center average crystal grain size is 20 ⁇ m or less, and the number of crystal grains in contact with the surface and having a major axis of 45 ⁇ m or more is 5 or less with respect to a length of 1 mm in the rolling direction. Alloy plate.
  • the added Co and Si form an intermetallic compound in the copper alloy by performing an appropriate heat treatment, and the conductivity is present despite the presence of additional elements other than copper.
  • the strength can be increased by the precipitation strengthening effect without degrading. If the addition amounts of Co and Si are less than Co: 0.5 mass% and Si: less than 0.1 mass%, the desired strength cannot be obtained. On the contrary, if Co: more than 3.0 mass% and Si: more than 1.0 mass%, the strength can be increased, but the electrical conductivity is remarkably lowered, and further, the hot workability is degraded. Therefore, the addition amounts of Co and Si were set to Co: 0.5 to 3.0 mass% and Si: 0.1 to 1.0 mass%. The addition amounts of Co and Si are preferably Co: 0.5 to 2.0 mass% and Si: 0.1 to 0.5 mass%.
  • the Cu—Co—Si based alloy plate according to the present invention can be added with one or two selected from Sn and Zn up to a maximum of 2.0 mass% in total. However, if the amount is less than 0.05% by mass, the effect is small. Therefore, the total amount is preferably 0.05 to 2.0% by mass, and more preferably 0.5 to 1.0% by mass in total.
  • Addition amount of As, Sb, Be, B, Ti, Zr, Al, and Fe is determined according to the required product characteristics. By adjusting, product characteristics such as conductivity, strength, stress relaxation characteristics, and plating properties are improved. The effect of addition is exhibited mainly by solid solution in the parent phase, but it can also be exhibited by forming the second phase particles having a new composition or contained in the second phase particles. However, if the total amount of these elements exceeds 2.0% by mass, the effect of improving characteristics is saturated and manufacturability is impaired.
  • the total amount of one or more selected from As, Sb, Be, B, Ti, Zr, Al and Fe is 2.0 mass in total. % Can be added. However, if the amount is less than 0.001% by mass, the effect is small. Therefore, the total amount is preferably 0.001 to 2.0% by mass, and more preferably 0.05 to 1.0% by mass. If the total amount of Mg, P, As, Sb, Be, B, Mn, Sn, Ti, Zr, Al, Fe, Zn, and Ag exceeds 2.0% by mass, manufacturability is likely to be impaired. Preferably, the total of these is 2.0% by mass or less, more preferably 1.5% by mass or less, and still more preferably 1.0% by mass or less.
  • the average crystal grain size at the center of the thickness of the cross section in the rolling direction is 20 ⁇ m or less.
  • the average crystal grain size at the center of the plate thickness is measured based on JIS H 0501 (cutting method).
  • the average crystal grain size at the center of the thickness of the copper alloy sheet of the present invention does not change significantly before and after the final rolling with a working degree of 10 to 50%. Therefore, if the average crystal grain size is 20 ⁇ m or less before the final rolling, a finer crystal structure than the sample copper alloy having an average crystal grain size of 20 ⁇ m is maintained even after the final rolling.
  • a sample obtained by final rolling a sample having an average crystal grain size of 20 ⁇ m under the same conditions before the final rolling is standard. It can be determined whether or not the average crystal grain size exceeds 20 ⁇ m.
  • the average crystal grain size of 20 ⁇ m or less at the center of the plate thickness is a rule for ensuring the same high strength as in the prior art, and “the center of the plate thickness” is a word for indicating the measurement position.
  • the surface layer is most likely to accumulate strain energy in the rolling process, and the crystals are likely to be locally coarsened in the normal manufacturing conditions as compared with the inside (center of the plate thickness).
  • the heat history may be different between the surface layer and the inside, and the crystal may be locally coarsened as compared with the inside (center of plate thickness).
  • the “surface layer” here refers to a range of 25 ⁇ m from the surface.
  • a copper alloy plate for electronic materials to which plating is uniformly attached can be obtained by reducing the number of coarse crystal grains on the surface of the Cu—Co—Si alloy plate.
  • the number of crystal grains in contact with the surface and having a major axis after final rolling of 45 ⁇ m or more is 5 or less, preferably 4 or less, more preferably 2 with respect to a length of 1 mm in the rolling direction. It is the following. When the number exceeds 5, the plating does not adhere uniformly, and when the surface of the plating is viewed with the naked eye, it becomes a defective product in a state where clouding occurs.
  • the number of crystal grains is determined by measuring the number of crystal grains of 45 ⁇ m or more in contact with the surface of the cross section in the rolling direction in a micrograph (magnification: ⁇ 400), and the length of the surface in multiple (10 times) measurement fields is 2000 ⁇ m. The number of crystal grains was divided by the total length in the range of 1 mm unit.
  • the copper alloy plate of the present invention Since the copper alloy plate of the present invention has 5 or less crystal grains having a major axis of 45 ⁇ m or more on the surface, it is excellent in uniform adhesion of plating.
  • Various plating materials can be applied to the copper alloy plate of the present invention, and examples thereof include Ni base plating, Cu base plating, and Sn plating that are usually used for the base of Au plating.
  • the plating thickness of the present invention shows sufficient uniform adhesion even with a thickness of 0.5 to 2.0 ⁇ m as well as a thickness of 2 to 5 ⁇ m which is usually used.
  • the manufacturing method of the copper alloy plate of the present invention is a general manufacturing process using a copper alloy plate (melting / casting ⁇ hot rolling ⁇ intermediate cold rolling ⁇ intermediate solution forming ⁇ final cold rolling ⁇ aging). In this process, the following conditions are adjusted to produce the target copper alloy sheet. In addition, about intermediate rolling and intermediate solution forming, you may repeat several times as needed. In the present invention, it is important to strictly control the conditions of hot rolling, intermediate cold rolling, and intermediate solution treatment. The reason for this is that the copper alloy plate of the present invention is added with Co, which tends to coarsen the second phase particles, and the generation and growth rate of the second phase particles greatly affects the holding temperature and cooling rate during the heat treatment. Because it is done.
  • raw materials such as electrolytic copper, Si, and Co are melted to obtain a molten metal having a desired composition. Then, this molten metal is cast into an ingot.
  • this molten metal is cast into an ingot.
  • hot rolling it is necessary to perform uniform heat treatment to eliminate crystallized substances such as Co—Si generated by casting as much as possible. For example, hot rolling is performed after holding at 950 ° C. to 1050 ° C. for 1 hour or longer. If the holding temperature before hot rolling is less than 950 ° C., solid solution is insufficient, while if it exceeds 1050 ° C., the material may be dissolved.
  • finish of hot rolling is less than 700 degreeC, it means that the process of several passes including the last pass of a hot rolling or the last pass was performed at less than 700 degreeC.
  • the temperature at the end of hot rolling is less than 700 ° C.
  • the inside is in a recrystallized state, whereas the surface layer is finished in a state where it is subjected to processing strain.
  • the inside is a normal recrystallized structure, whereas the surface layer is formed with coarse crystal grains. Therefore, in order to prevent the formation of coarse crystals on the surface layer, it is desirable to finish the hot rolling at 700 ° C. or higher, preferably 850 ° C. or higher, and to cool rapidly after the hot rolling is finished. Rapid cooling can be achieved by water cooling.
  • intermediate rolling and intermediate solution forming are performed by appropriately selecting the number of times and the order within the target range. If the degree of processing in the final pass of the intermediate rolling is less than 5%, processing strain energy is accumulated only on the material surface, and coarse crystal grains are generated on the surface layer. In particular, the intermediate rolling degree of the final pass is preferably 8% or more. In addition, controlling the viscosity of the rolling oil used in the intermediate rolling and the speed of the intermediate rolling is also effective for uniformly applying the processing strain energy.
  • the intermediate solution treatment is carried out sufficiently to dissolve the crystallized particles at the time of melt casting and the precipitated particles after hot rolling so as to eliminate as coarse a Co—Si precipitate as possible.
  • the solution treatment temperature is less than 850 ° C.
  • the solid solution is insufficient and the desired strength cannot be obtained.
  • the solution treatment temperature exceeds 1050 ° C.
  • the material may be dissolved. Therefore, it is preferable to perform a solution treatment in which the material temperature is heated to 850 ° C. to 1050 ° C.
  • the solution treatment time is preferably 0.5 minutes to 1 hour. It should be noted that, as a relationship between temperature and time, in order to obtain the same heat treatment effect (for example, the same crystal grain size), it is common knowledge that the time should be short at high temperatures and long at low temperatures.
  • the cooling rate after the solution treatment is generally quenched in order to prevent precipitation of solid solution second phase particles.
  • an aging treatment is performed under a temperature condition of 400 ° C. or more and 600 ° C. or less to precipitate fine second phase particles uniformly. If the aging temperature is less than 400 ° C., the second phase particles are not sufficiently precipitated, and the desired strength and electrical conductivity cannot be obtained. This is because the particles are coarsened and a desired strength cannot be obtained.
  • the aging temperature is preferably 450 ° C. or higher and 550 ° C. or lower.
  • the degree of work of the final rolling is preferably 10 to 50%, preferably 30 to 50%. If it is less than 10%, the desired strength cannot be obtained. On the other hand, when it exceeds 50%, bending workability deteriorates.
  • the copper alloy plate of the present invention has no coarse crystal particles on the surface, it has excellent uniform plating adhesion, and is suitable for electronic parts such as lead frames, connectors, pins, terminals, relays, switches, and foil materials for secondary batteries. Can be used for
  • Crystal grain size at the center of the plate thickness Standard sample (Co: 1.0 mass%, average grain size of 20 ⁇ m at the center of the plate thickness in the rolling direction after the solution treatment and before final rolling Si: 0.66 mass%, balance copper) was produced. The average crystal grain size was measured based on JIS H 0501 (cutting method). The standard sample was subjected to final cold rolling (working degree 15%), and an optical micrograph (magnification: ⁇ 400) of the center of the thickness in the cross section in the rolling direction was taken as a reference.
  • optical micrograph (same magnification as the standard) of the center of the thickness after the final cold rolling of each example (invention example and comparative example) and the size of the standard are visually compared, and if larger, larger than 20 ⁇ m ( > 20 ⁇ m), and when equal or smaller, 20 ⁇ m or less ( ⁇ 20 ⁇ m).
  • Electrolytic degreasing is performed using a sample as a cathode in an alkaline aqueous solution. Pickling is performed using a 10% by mass aqueous sulfuric acid solution.
  • -Plating bath composition nickel sulfate 250 g / L, nickel chloride 45 g / L, boric acid 30 g / L ⁇ Plating bath temperature: 50 °C ⁇
  • Current density 5 A / dm 2 -Ni plating thickness was adjusted with the electrodeposition time, and was 1.0 micrometer. The plating thickness was measured using a CT-1 type electrolytic film thickness meter (manufactured by Denso Co., Ltd.) and an electrolytic solution R-54 manufactured by Kocourt.
  • FIG. 1 is an optical micrograph of the plating surface of Example 1 of the present invention, which corresponds to “S” rank
  • FIG. 2 is an optical micrograph of the plating surface of Comparative Example 11, and ranks “C”. Equivalent to.
  • FIG. 3 is an enlarged photograph (magnification: ⁇ 2500) of “island-like plating” observed on the plating surface, and the number of island-like platings in the field of view was measured using such an island shape as one.
  • E Conductivity (EC;% IACS) The volume resistivity was measured by a double bridge.
  • F Bending workability In accordance with JIS H 3130, a badway (bending axis is the same direction as the rolling direction) is subjected to a W-bending test, and MBR, which is a ratio of a minimum radius (MBR) to a thickness (t) at which no cracks occur. / T value was measured. Bending workability was evaluated according to the following criteria. MBR / t ⁇ 2.0 Good 2.0 ⁇ MBR / t Poor
  • Comparative Example 12 Compared to 15% of the degree of intermediate rolling in the final pass of Comparative Example 11, it is as low as 5% in Comparative Example 12 having the same composition, so that coarse particles are further generated on the surface, resulting in poor uniform plating adhesion.
  • the hot rolling start temperature of Invention Example 7 is 950 ° C.
  • the ascending temperature is 750 ° C.
  • the processing degree of intermediate rolling in the final pass is 15%. Therefore, coarse particles are generated on the surface, resulting in poor uniform plating adhesion.
  • the relationship between Invention Example 8 and Comparative Example 18 is the same.

Abstract

L'invention porte sur une tôle en un alliage à base de Cu-Co-Si, qui peut être utilisée avantageusement pour différents composants électroniques et qui peut être plaquée d'une manière satisfaisante et homogène. L'invention porte plus précisément sur une tôle en un alliage de cuivre pour un matériau électronique, qui comprend 0,5 à 3,0 % en masse de Co, 0,1 à 1,0 % en masse de Si, le reste étant constitué de Cu et des impuretés inévitables, la granulométrie moyenne des cristaux, dans la partie de la tôle qui est en position centrale en épaisseur, étant de 20 µm ou moins, et les particules cristallines qui sont en contact avec la surface de la tôle et ont un grand diamètre de 45 µm ou moins existant à une densité de 5 particules ou moins par mm de la longueur de la tôle dans la direction du laminage.
PCT/JP2011/057216 2010-06-03 2011-03-24 Tôle en un alliage à base de cu-co-si et son procédé de production WO2011152104A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP11789514.4A EP2578708A4 (fr) 2010-06-03 2011-03-24 Tôle en un alliage à base de cu-co-si et son procédé de production
US13/581,715 US20130092297A1 (en) 2010-06-03 2011-03-24 Cu-Co-Si System Alloy Sheet and Method for Manufacturing Same
CN201180003593.1A CN102666890B (zh) 2010-06-03 2011-03-24 Cu-Co-Si系合金板及其制造方法

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JP2010-127943 2010-06-03
JP2010127943A JP4708497B1 (ja) 2010-06-03 2010-06-03 Ｃｕ−Ｃｏ−Ｓｉ系合金板及びその製造方法

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US (1) US20130092297A1 (fr)
EP (1) EP2578708A4 (fr)
JP (1) JP4708497B1 (fr)
CN (1) CN102666890B (fr)
TW (1) TWI422693B (fr)
WO (1) WO2011152104A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104342582A (zh) * 2013-07-31 2015-02-11 Jx日矿日石金属株式会社 Cu-Co-Si系铜合金条及其制造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5437519B1 (ja) 2013-07-31 2014-03-12 Ｊｘ日鉱日石金属株式会社 Ｃｕ−Ｃｏ−Ｓｉ系銅合金条及びその製造方法
JP6294037B2 (ja) * 2013-09-18 2018-03-14 株式会社Maruwa 複合型ノイズフィルタ
JP6615093B2 (ja) 2014-05-30 2019-12-04 古河電気工業株式会社 電気接点材、電気接点材の製造方法および端子
JP6306632B2 (ja) 2016-03-31 2018-04-04 Ｊｘ金属株式会社 電子材料用銅合金

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005532477A (ja) 2002-07-05 2005-10-27 オリン コーポレイション コバルト、ニッケル、珪素を含む銅合金
JP2007169765A (ja) 2005-12-26 2007-07-05 Furukawa Electric Co Ltd:The 銅合金とその製造方法
JP2008248333A (ja) 2007-03-30 2008-10-16 Nikko Kinzoku Kk 電子材料用Ｃｕ−Ｎｉ−Ｓｉ−Ｃｏ系銅合金及びその製造方法
WO2010016428A1 (fr) * 2008-08-05 2010-02-11 古河電気工業株式会社 Matière d'alliage de cuivre pour un composant électrique/électronique
JP2010059543A (ja) * 2008-08-05 2010-03-18 Furukawa Electric Co Ltd:The 銅合金材料

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100439530C (zh) * 2004-12-24 2008-12-03 株式会社神户制钢所 具有弯曲性和应力弛豫性能的铜合金
WO2006101172A1 (fr) * 2005-03-24 2006-09-28 Nippon Mining & Metals Co., Ltd. Alliage de cuivre pour materiel electronique
JP5085908B2 (ja) * 2006-10-03 2012-11-28 Ｊｘ日鉱日石金属株式会社 電子材料用銅合金及びその製造方法
CN101952465B (zh) * 2008-01-31 2012-09-19 古河电气工业株式会社 电气电子零件用铜合金材料及其制造方法
JP4596490B2 (ja) * 2008-03-31 2010-12-08 Ｊｘ日鉱日石金属株式会社 電子材料用Ｃｕ−Ｎｉ−Ｓｉ−Ｃｏ系銅合金及びその製造方法
KR101570555B1 (ko) * 2008-07-31 2015-11-19 후루카와 덴키 고교 가부시키가이샤 전기전자부품용 동합금 재료와 그 제조방법
JP5261161B2 (ja) * 2008-12-12 2013-08-14 Ｊｘ日鉱日石金属株式会社 Ｎｉ−Ｓｉ−Ｃｏ系銅合金及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005532477A (ja) 2002-07-05 2005-10-27 オリン コーポレイション コバルト、ニッケル、珪素を含む銅合金
JP2007169765A (ja) 2005-12-26 2007-07-05 Furukawa Electric Co Ltd:The 銅合金とその製造方法
JP2008248333A (ja) 2007-03-30 2008-10-16 Nikko Kinzoku Kk 電子材料用Ｃｕ−Ｎｉ−Ｓｉ−Ｃｏ系銅合金及びその製造方法
WO2010016428A1 (fr) * 2008-08-05 2010-02-11 古河電気工業株式会社 Matière d'alliage de cuivre pour un composant électrique/électronique
JP2010059543A (ja) * 2008-08-05 2010-03-18 Furukawa Electric Co Ltd:The 銅合金材料

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2578708A4 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104342582A (zh) * 2013-07-31 2015-02-11 Jx日矿日石金属株式会社 Cu-Co-Si系铜合金条及其制造方法

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TW201200606A (en) 2012-01-01
EP2578708A1 (fr) 2013-04-10
JP4708497B1 (ja) 2011-06-22
JP2011252216A (ja) 2011-12-15
TWI422693B (zh) 2014-01-11
US20130092297A1 (en) 2013-04-18
CN102666890A (zh) 2012-09-12
CN102666890B (zh) 2014-05-07
EP2578708A4 (fr) 2014-04-09

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