WO2010016428A1 - Matière d'alliage de cuivre pour un composant électrique/électronique - Google Patents

Matière d'alliage de cuivre pour un composant électrique/électronique Download PDF

Info

Publication number
WO2010016428A1
WO2010016428A1 PCT/JP2009/063614 JP2009063614W WO2010016428A1 WO 2010016428 A1 WO2010016428 A1 WO 2010016428A1 JP 2009063614 W JP2009063614 W JP 2009063614W WO 2010016428 A1 WO2010016428 A1 WO 2010016428A1
Authority
WO
WIPO (PCT)
Prior art keywords
copper alloy
bending
alloy material
mass
ratio
Prior art date
Application number
PCT/JP2009/063614
Other languages
English (en)
Japanese (ja)
Inventor
亮佑 松尾
邦照 三原
立彦 江口
Original Assignee
古河電気工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 古河電気工業株式会社 filed Critical 古河電気工業株式会社
Priority to JP2010523839A priority Critical patent/JPWO2010016428A1/ja
Priority to EP09804912A priority patent/EP2333127A4/fr
Priority to CN200980130454.8A priority patent/CN102112641B/zh
Publication of WO2010016428A1 publication Critical patent/WO2010016428A1/fr
Priority to US13/021,444 priority patent/US20110200480A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper

Definitions

  • the present invention relates to a copper alloy material for electric / electronic parts.
  • parts for electrical and electronic devices include brass (C26000), phosphor bronze (C51910, C52120, C52100) and beryllium copper (C17200, C17530), Corson copper alloy (C70250) has been used.
  • Cxxxx is a type of copper alloy defined by CDA (Copper Development Association).
  • CDA Copper Development Association
  • Corson-type copper alloy has high conductivity, but Cu—Co— added with Co and Si as a copper alloy that has both conductivity higher than the conventional Corson-type copper alloy and high tensile strength and bending resistance.
  • Si-based alloys have been studied (for example, Patent Documents 1 and 2).
  • An object of the present invention is to provide a copper alloy material for electric / electronic parts that has high conductivity and high tensile strength and is excellent in bending resistance.
  • a copper alloy material containing a predetermined amount of Co and Si, having a mass ratio of Co and Si within a predetermined range, and having a crystal grain size within the predetermined range is highly conductive. And high tensile strength, it has been found to pass a strict bending test. The present invention has been made based on this finding.
  • Co is contained in an amount of 0.7 to 2.5% by mass
  • Si is contained in a mass ratio of Co to Si (Co / Si ratio) in the range of 3.5 to 4.0
  • the balance is Cu
  • a copper alloy material for electric and electronic parts characterized by comprising inevitable impurities and having a crystal grain size of 3 to 15 ⁇ m
  • the mass ratio ((Co + X) / Si ratio) of Si to the total mass of at least one selected from the group consisting of Cr, Ni, Fe, Zr and Ti and Co with respect to Si is 3.5 or more.
  • a copper alloy material for electrical and electronic parts which is contained within a range of 4.0 or less and has a crystal grain size of 3 to 15 ⁇ m.
  • the “copper alloy material” means a composition obtained by processing a composition as a copper alloy into a predetermined shape (for example, a plate, a strip, a foil, a bar, a wire, etc.).
  • a predetermined shape for example, a plate, a strip, a foil, a bar, a wire, etc.
  • a preferable specific example of the copper alloy material will be described with a plate material and a strip material, but the shape of the copper alloy material is not limited to the plate material and the strip material.
  • the first copper alloy material for electric / electronic parts of the present invention will be described.
  • Co and Si are essential components.
  • Co and Si in the copper alloy mainly form precipitates of Co 2 Si intermetallic compounds. By setting the ratio of this precipitate within a specific range, it is possible to provide a copper alloy material for electric / electronic parts having high tensile strength and electrical conductivity.
  • Co is 0.7 to 2.5% by mass, preferably 0.8 to 2.2% by mass, more preferably 0.9 to 1.7% by mass. is there. By setting it within this range, a copper alloy material for electric and electronic parts having high tensile strength and electrical conductivity can be obtained.
  • the amount of Co is too small, the precipitate of Co 2 Si intermetallic compound decreases, and a copper alloy material for electric / electronic parts with high tensile strength and electrical conductivity cannot be obtained. If the amount of Co is too large, the effect is saturated.
  • Si it is preferable to add an amount corresponding to Co so as to maintain the stoichiometric ratio of the Co 2 Si intermetallic compound.
  • the amount of Si is not appropriate, it is the same as when the amount of Co is not appropriate. That is, if the amount of Si is too small, the precipitate of the Co 2 Si intermetallic compound decreases, and a copper alloy material for electric / electronic parts with high tensile strength and electrical conductivity cannot be obtained. If the amount of Si is too large, the effect is saturated.
  • the optimum mass ratio of Co to Si is Co / Si ⁇ 4.2.
  • Co to Si The mass ratio (Co / Si) is set in the range of 3.5 or more and 4.0 or less.
  • the value of Co / Si is in the range of 3.70 to 3.95 in terms of mass ratio.
  • the mass ratio of Co to Si (Co / Si ratio) is too small, Si becomes excessive, so that part of Si that does not form an intermetallic compound with Co is dissolved, resulting in a low electrical conductivity. If the mass ratio of Co to Si (Co / Si ratio) is too large, Co becomes excessive, so that a part of Co that does not form an intermetallic compound with Si is dissolved and the conductivity is lowered.
  • the amount of Co and the amount of Si exceed a predetermined amount, an alloy material cannot be obtained unless the solution temperature is increased. Therefore, at a temperature higher than the usual solution temperature (about 1000 ° C.). When heat treatment is performed, problems such as inability to maintain the product shape occur.
  • Si is determined so that the mass ratio of Co to Si (Co / Si) is in the range of 3.5 or more and 4.0 or less. Si is preferably 0.2 to 0.7% by mass.
  • Co is 0.7 to 2.5% by mass, and at least one selected from the group consisting of Cr, Ni, Fe, Zr, Ti, Al, Sn, Mg and Zn is 0. Si in the total mass of at least one (X) selected from the group consisting of Cr, Ni, Fe, Zr, and Ti and Co containing 0.01 to 0.15% by mass, the balance being Cu and inevitable impurities
  • X selected from the group consisting of Cr, Ni, Fe, Zr, and Ti and Co containing 0.01 to 0.15% by mass, the balance being Cu and inevitable impurities
  • the mass ratio ((Co + X) / Si ratio) is within the range of 3.5 or more and 4.0 or less.
  • the addition amount of at least one selected from the group consisting of Cr, Ni, Fe, Zr, Ti, Al, Sn, Mg and Zn is preferably 0.05 to 0.15% by mass.
  • the addition amount is too small, the effect of the addition is small, and when the addition amount is too large, the strength is lowered and the conductivity is lowered by the solid solution of the added element.
  • At least one (X) selected from the group consisting of Cr, Ni, Fe, Zr and Ti is substituted for a part of Co to form a (Co, X) 2 Si compound and to improve the strength. .
  • Al, Sn, Mg, and Zn are characterized by solid solution in the copper matrix and strengthening.
  • the alloy material is strengthened and the stress relaxation resistance is improved.
  • the stress relaxation resistance is synergistically improved.
  • the addition ratio of Sn and Mg is Sn / Mg ⁇ 1, the stress relaxation characteristics are further improved.
  • the value of (Co + X) / Si ratio is in the range of 3.70 to 3.95 in terms of mass ratio.
  • the mass ratio of Si to the total mass of at least one (X) selected from the group consisting of Cr, Ni, Fe, Zr and Ti and Co (( The amount of Si is determined so that the (Co + X) / Si ratio) is in the range of 3.5 to 4.0, but Si is preferably 0.2 to 0.7 mass%.
  • the copper alloy for electric / electronic parts is not impaired. A material can be obtained.
  • the crystal grain size is 3 to 15 ⁇ m.
  • the crystal grain size refers to a value measured by JIS H 0501 (cutting method). By setting the crystal grain size within the range of 3 to 15 ⁇ m, it is possible to obtain a copper alloy material for electric / electronic parts having excellent bending resistance. When the crystal grain size is less than 3 ⁇ m, the remaining of the processed structure is confirmed, which adversely affects the bending resistance. On the other hand, when the grain size is larger than 15 ⁇ m, bending and cracking at the crystal grain boundaries become remarkable, resulting in a decrease in bending resistance.
  • the crystal grain size is preferably 4 to 10 ⁇ m.
  • the range of heat treatment conditions and rolling conditions in each step up to the final recrystallization heat treatment where the blending amount of elements such as Co and Si is within a specific range. Is within a specific range, or the heat history management conditions (temperature increase rate, holding temperature and time) of the recrystallization heat treatment are within a specific range.
  • the recrystallization treatment temperature is preferably in the range of 850 to 900 ° C.
  • the amount of Co added is 1.0 to 2.5% by mass.
  • the recrystallization treatment temperature is preferably in the range of 900 to 1025 ° C.
  • the upper limit temperature is more preferably 1000 ° C.
  • the preferable manufacturing method of the copper alloy material of this invention is the following aspects, for example.
  • the outline of the main manufacturing method of the copper alloy material of the present invention is as follows: melting ⁇ casting ⁇ hot rolling ⁇ facing ⁇ cold rolling ⁇ solution recrystallization heat treatment ⁇ rapid cooling ⁇ aging heat treatment ⁇ final cold rolling ⁇ low temperature annealing. is there. Aging heat treatment and final cold rolling may be performed in reverse order. The final low-temperature annealing may be omitted.
  • recrystallization heat treatment After that, for the purpose of solution and recrystallization, recrystallization heat treatment is performed for a certain time (here 30 seconds) in a salt bath (salt bath furnace) maintained at a temperature of 800 to 1025 ° C., and quenching is performed by water cooling. Do.
  • the temperature rise rate is adjusted by sandwiching the sample between stainless steel plates having different thicknesses.
  • a preferable temperature increase rate at this time is 10 to 300 K / sec at a temperature of 300 ° C. or higher.
  • a preferable cooling rate is 30 to 200 K / sec.
  • ⁇ Aging heat treatment> Next, an aging heat treatment is performed at a temperature of 400 to 600 ° C. for 30 to 300 minutes for the purpose of aging precipitation. At that time, the rate of temperature rise from room temperature to the maximum temperature is in the range of 3 to 25 K / min. When the temperature is lowered, the temperature rises to 300 ° C, which is sufficiently lower than the temperature range considered to affect precipitation.
  • R / t means the result of a W-bending test at a bending angle of 90 ° in accordance with the Japan Copper and Brass Association technical standard “Evaluation method for bending workability of copper and copper alloy sheet strip (JBMA T307)”. To do.
  • the plate material cut in the vertical direction of rolling is subjected to a bending test under the condition of a predetermined bending radius (R), and the limit R at which the crack does not occur at the apex is obtained, and the plate thickness (t) at that time is specified.
  • R a predetermined bending radius
  • t the plate thickness
  • R / t can be obtained.
  • the copper alloy material of the present invention is excellent in conductivity and tensile strength, and can pass a bending test under severe conditions.
  • recrystallization heat treatment was performed at a temperature of 870 to 1000 ° C.
  • the recrystallization heat treatment was performed by increasing the temperature as the amount of Co added was increased. Specifically, when the addition amount of Co is 0.9% by mass, 870 ° C., when the addition amount of Co is 1.2% by mass, 915 ° C., and when the addition amount of Co is 1.4% by mass, 940 ° C., 965 ° C. when Co addition amount is 1.65% by mass, 980 ° C. when Co addition amount is 1.9% by mass, 1000 ° C. when Co addition amount is 2.4% by mass It was. Note that when an additive other than Co and Si was included (Alloy Nos.
  • GW bending bending
  • BW bending bending perpendicular to the rolling direction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Conductive Materials (AREA)

Abstract

L'invention porte sur une matière d'alliage de cuivre pour des composants électriques/électroniques, qui est caractérisée par le fait qu'elle contient 0,7-2,5 % en masse de Co, tout en contenant Si dans une quantité telle que le rapport en masse entre Co et Si (Co/Si) n'est pas inférieur à 3,5 mais non supérieur à 4,0, le complément étant composé de Cu et des impuretés inévitables. La matière d'alliage de cuivre est également caractérisée par le fait qu'elle a une dimension de grain cristallin de 3-15 μm.
PCT/JP2009/063614 2008-08-05 2009-07-30 Matière d'alliage de cuivre pour un composant électrique/électronique WO2010016428A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010523839A JPWO2010016428A1 (ja) 2008-08-05 2009-07-30 電気・電子部品用銅合金材
EP09804912A EP2333127A4 (fr) 2008-08-05 2009-07-30 Matière d'alliage de cuivre pour un composant électrique/électronique
CN200980130454.8A CN102112641B (zh) 2008-08-05 2009-07-30 用于电气/电子部件的铜合金材料
US13/021,444 US20110200480A1 (en) 2008-08-05 2011-02-04 Copper alloy material for electric/electronic parts

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008-202469 2008-08-05
JP2008202469 2008-08-05

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/021,444 Continuation US20110200480A1 (en) 2008-08-05 2011-02-04 Copper alloy material for electric/electronic parts

Publications (1)

Publication Number Publication Date
WO2010016428A1 true WO2010016428A1 (fr) 2010-02-11

Family

ID=41663648

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2009/063614 WO2010016428A1 (fr) 2008-08-05 2009-07-30 Matière d'alliage de cuivre pour un composant électrique/électronique

Country Status (6)

Country Link
US (1) US20110200480A1 (fr)
EP (1) EP2333127A4 (fr)
JP (1) JPWO2010016428A1 (fr)
KR (1) KR20110039372A (fr)
CN (1) CN102112641B (fr)
WO (1) WO2010016428A1 (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011152104A1 (fr) * 2010-06-03 2011-12-08 Jx日鉱日石金属株式会社 Tôle en un alliage à base de cu-co-si et son procédé de production
WO2012026488A1 (fr) 2010-08-24 2012-03-01 Jx日鉱日石金属株式会社 Alliage de cuivre-cobalt-silicium pour matériau d'électrode
JP2012201905A (ja) * 2011-03-24 2012-10-22 Jx Nippon Mining & Metals Corp Ｃｏ−Ｓｉ系銅合金板
JP2012224898A (ja) * 2011-04-18 2012-11-15 Jx Nippon Mining & Metals Corp 電子材料用Ｃｕ−Ｎｉ−Ｓｉ系合金、Ｃｕ−Ｃｏ−Ｓｉ系合金及びその製造方法
TWI450985B (zh) * 2011-03-28 2014-09-01 Jx Nippon Mining & Metals Corp Co-Si copper alloy plate
CN104583430A (zh) * 2012-07-26 2015-04-29 三菱电机株式会社 铜合金及其制造方法
US9460825B2 (en) 2010-05-31 2016-10-04 Jx Nippon Mining & Metals Corporation Cu-Co-Si-based copper alloy for electronic materials, and method of manufacturing same
US9499885B2 (en) 2010-04-14 2016-11-22 Jx Nippon Mining & Metals Corporation Cu—Si—Co alloy for electronic materials, and method for producing same
CN110415895A (zh) * 2019-08-16 2019-11-05 仙桃科利科技发展有限公司 一种高传输率抗老化数据线的制作工艺

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5802150B2 (ja) * 2012-02-24 2015-10-28 株式会社神戸製鋼所 銅合金
KR102005332B1 (ko) * 2019-04-09 2019-10-01 주식회사 풍산 굽힘가공성이 우수한 Cu-Co-Si-Fe-P계 구리 합금 및 그 제조 방법
CN110205570B (zh) * 2019-04-15 2021-01-01 丰山(连云港)新材料有限公司 一种电气电子部件用铜合金的热处理方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63307232A (ja) * 1987-06-04 1988-12-14 Sumitomo Metal Mining Co Ltd 銅合金
JPH02277735A (ja) * 1989-04-20 1990-11-14 Sumitomo Metal Mining Co Ltd リードフレーム用銅合金
JP2000087158A (ja) * 1998-09-11 2000-03-28 Furukawa Electric Co Ltd:The 半導体リードフレーム用銅合金
JP2007169764A (ja) * 2005-12-26 2007-07-05 Furukawa Electric Co Ltd:The 銅合金
JP2008056977A (ja) * 2006-08-30 2008-03-13 Mitsubishi Electric Corp 銅合金及びその製造方法
JP2008088512A (ja) 2006-10-03 2008-04-17 Nikko Kinzoku Kk 電子材料用銅合金の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3408021B2 (ja) * 1995-06-30 2003-05-19 古河電気工業株式会社 電子電気部品用銅合金およびその製造方法
JP3510469B2 (ja) * 1998-01-30 2004-03-29 古河電気工業株式会社 導電性ばね用銅合金及びその製造方法
JP3739214B2 (ja) * 1998-03-26 2006-01-25 株式会社神戸製鋼所 電子部品用銅合金板
JP3754011B2 (ja) * 2002-09-04 2006-03-08 デプト株式会社 電子部品用金属材料、電子部品、電子機器、金属材料の加工方法、電子部品の製造方法及び電子光学部品
JP5475230B2 (ja) * 2005-03-24 2014-04-16 Ｊｘ日鉱日石金属株式会社 電子材料用銅合金
JP4068626B2 (ja) * 2005-03-31 2008-03-26 日鉱金属株式会社 電子材料用Ｃｕ−Ｎｉ−Ｓｉ−Ｃｏ−Ｃｒ系銅合金及びその製造方法
JP5355865B2 (ja) * 2006-06-01 2013-11-27 古河電気工業株式会社 銅合金線材の製造方法および銅合金線材

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63307232A (ja) * 1987-06-04 1988-12-14 Sumitomo Metal Mining Co Ltd 銅合金
JPH02277735A (ja) * 1989-04-20 1990-11-14 Sumitomo Metal Mining Co Ltd リードフレーム用銅合金
JP2000087158A (ja) * 1998-09-11 2000-03-28 Furukawa Electric Co Ltd:The 半導体リードフレーム用銅合金
JP2007169764A (ja) * 2005-12-26 2007-07-05 Furukawa Electric Co Ltd:The 銅合金
JP2008056977A (ja) * 2006-08-30 2008-03-13 Mitsubishi Electric Corp 銅合金及びその製造方法
JP2008088512A (ja) 2006-10-03 2008-04-17 Nikko Kinzoku Kk 電子材料用銅合金の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2333127A4

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9499885B2 (en) 2010-04-14 2016-11-22 Jx Nippon Mining & Metals Corporation Cu—Si—Co alloy for electronic materials, and method for producing same
US9460825B2 (en) 2010-05-31 2016-10-04 Jx Nippon Mining & Metals Corporation Cu-Co-Si-based copper alloy for electronic materials, and method of manufacturing same
EP2578708A1 (fr) * 2010-06-03 2013-04-10 JX Nippon Mining & Metals Corporation Tôle en un alliage à base de cu-co-si et son procédé de production
WO2011152104A1 (fr) * 2010-06-03 2011-12-08 Jx日鉱日石金属株式会社 Tôle en un alliage à base de cu-co-si et son procédé de production
EP2578708A4 (fr) * 2010-06-03 2014-04-09 Jx Nippon Mining & Metals Corp Tôle en un alliage à base de cu-co-si et son procédé de production
CN103052728B (zh) * 2010-08-24 2015-07-08 Jx日矿日石金属株式会社 电子材料用Cu-Co-Si系合金
CN103052728A (zh) * 2010-08-24 2013-04-17 Jx日矿日石金属株式会社 电子材料用Cu-Co-Si系合金
EP2607508A1 (fr) * 2010-08-24 2013-06-26 JX Nippon Mining & Metals Corporation Alliage de cuivre-cobalt-silicium pour matériau d'électrode
EP2607508A4 (fr) * 2010-08-24 2014-04-09 Jx Nippon Mining & Metals Corp Alliage de cuivre-cobalt-silicium pour matériau d'électrode
JP2012046774A (ja) * 2010-08-24 2012-03-08 Jx Nippon Mining & Metals Corp 電子材料用Ｃｕ−Ｃｏ−Ｓｉ系合金
WO2012026488A1 (fr) 2010-08-24 2012-03-01 Jx日鉱日石金属株式会社 Alliage de cuivre-cobalt-silicium pour matériau d'électrode
US10056166B2 (en) 2010-08-24 2018-08-21 Jx Nippon Mining & Metals Corporation Copper-cobalt-silicon alloy for electrode material
JP2012201905A (ja) * 2011-03-24 2012-10-22 Jx Nippon Mining & Metals Corp Ｃｏ−Ｓｉ系銅合金板
TWI450985B (zh) * 2011-03-28 2014-09-01 Jx Nippon Mining & Metals Corp Co-Si copper alloy plate
JP2012224898A (ja) * 2011-04-18 2012-11-15 Jx Nippon Mining & Metals Corp 電子材料用Ｃｕ−Ｎｉ−Ｓｉ系合金、Ｃｕ−Ｃｏ−Ｓｉ系合金及びその製造方法
CN104583430A (zh) * 2012-07-26 2015-04-29 三菱电机株式会社 铜合金及其制造方法
CN110415895A (zh) * 2019-08-16 2019-11-05 仙桃科利科技发展有限公司 一种高传输率抗老化数据线的制作工艺

Also Published As

Publication number Publication date
US20110200480A1 (en) 2011-08-18
EP2333127A1 (fr) 2011-06-15
KR20110039372A (ko) 2011-04-15
CN102112641A (zh) 2011-06-29
EP2333127A4 (fr) 2012-07-04
CN102112641B (zh) 2013-03-27
JPWO2010016428A1 (ja) 2012-01-19

Similar Documents

Publication Publication Date Title
JP5391169B2 (ja) 電気電子部品用銅合金材およびその製造方法
WO2010016428A1 (fr) Matière d'alliage de cuivre pour un composant électrique/électronique
JP4584692B2 (ja) 曲げ加工性に優れた高強度銅合金板およびその製造方法
JP5224415B2 (ja) 電気電子部品用銅合金材料とその製造方法
KR101419147B1 (ko) 구리합금 판재 및 그 제조방법
JP4934759B2 (ja) 銅合金板材及びこれを用いたコネクタ並びに銅合金板材の製造方法
JP5933817B2 (ja) 銅合金および銅合金板
KR102126731B1 (ko) 구리합금 판재 및 구리합금 판재의 제조 방법
WO2009148101A1 (fr) Matériau de tôle d’alliage de cuivre et procédé de fabrication de celui-ci
WO2012121109A1 (fr) ALLIAGE À BASE DE Cu-Ni-Si ET PROCÉDÉ POUR SA FABRICATION
JP5619389B2 (ja) 銅合金材料
US20170130309A1 (en) Copper alloy for electronic equipment, method for producing copper alloy for electronic equipment, rolled copper alloy material for electronic equipment, and part for electronic equipment
WO2015182776A1 (fr) Tôle d'alliage de cuivre, connecteur comprenant une tôle d'alliage de cuivre et procédé de production de tôle d'alliage de cuivre
WO2013018228A1 (fr) Alliage à base de cuivre
WO2010016429A1 (fr) Matière d'alliage de cuivre pour un composant électrique/électronique
JP5065478B2 (ja) 電気電子部品用銅合金材および製造方法
WO2015182777A1 (fr) Matériau en feuille d'alliage de cuivre, son procédé de production et composant électrique/électronique comprenant ledit matériau en feuille d'alliage de cuivre
KR20190077011A (ko) 구리 합금 판재 및 그 제조 방법
JP5468798B2 (ja) 銅合金板材
JP5098096B2 (ja) 銅合金、端子又はバスバー及び銅合金の製造方法
JP6111028B2 (ja) コルソン合金及びその製造方法
JP2007169764A (ja) 銅合金
KR102345805B1 (ko) 강도와 압연 평행 방향 및 압연 직각 방향의 굽힘 가공성이 우수한 Cu-Ni-Si계 합금 스트립
JP6246454B2 (ja) Ｃｕ−Ｎｉ−Ｓｉ系合金及びその製造方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200980130454.8

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09804912

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2010523839

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2009804912

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 20117004941

Country of ref document: KR

Kind code of ref document: A