WO2011148617A1 - 半導体装置及びその駆動方法 - Google Patents
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
- H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
Definitions
- the present invention relates to a semiconductor device having a MIS (Metal-Insulator-Semiconductor) structure.
- a device having an insulating film structure on a semiconductor substrate is required to improve the quality of the insulating film in order to improve its basic performance.
- thermal SiO 2 film an extremely high quality thermally grown oxide film (thermal SiO 2 film) has been used as the gate insulating film, and it has been adapted to miniaturization by thinning or the like.
- thermal SiO 2 film the introduction of a high dielectric constant insulating film or the like has been promoted in order to face further limitations in reducing the thickness of the thermal SiO 2 film.
- silicon carbide silicon carbide: SiC
- SiC silicon carbide
- a relatively good quality SiO 2 film can be formed on SiC by thermal oxidation.
- the MIS interface has many defects related to the thermal SiO 2 film such as interface states, and the channel mobility of the MIS transistor is extremely low and it is difficult to ensure reliability.
- a nitriding treatment step is added to dope high concentration nitrogen to the SiO 2 / SiC interface, thereby reducing the interface state and reducing the channel state. It has been reported that mobility can be improved.
- Patent Document 1 a nitriding process is performed on an SiC surface in an atmosphere containing NO gas or N 2 O gas, and subsequent to the nitriding process, chemical or physical vapor deposition is performed on the SiC surface.
- a manufacturing method including a step of forming a film is disclosed.
- MIS type semiconductor device formed on Si or a MISFET (MIS Field-Effect-Transistor) of a transistor element
- an internal electric field is increasing with progress of miniaturization.
- carriers in the semiconductor are more likely to be introduced into the gate insulating film by obtaining more energy and crossing the insulating film barrier, etc., and there are various reliability problems such that the threshold voltage (Vth) fluctuates and becomes unstable. cause.
- Carriers that can be introduced into the gate insulating film include electrons (electrons) and holes (holes). Compared to the former, the latter introduces the amount of damage (such as trap efficiency) per trap that is introduced per carrier. It is well known that it is overwhelmingly large.
- the semiconductor side has a wide band gap, so even when SiO 2 having a wide band gap is used for the gate insulating film, the barrier height against the semiconductor becomes lower. Accordingly, carriers in the semiconductor are more easily introduced into the insulating film.
- FIG. 9 shows a configuration example of a SiC semiconductor device 1100 having a vertical MIS structure.
- the semiconductor device 1100 has a structure in which an n ⁇ drift layer 111 is stacked on an n + substrate (SiC substrate) 110.
- a p body region 120 is formed on the n ⁇ drift layer 111, and a p body contact region 122 and an n + source region 124 are formed on the p body region 120.
- a channel layer 140 is formed on the surfaces of n ⁇ drift layer 111, p body contact region 122, and n + source region 124.
- a gate insulating film 144 and a gate electrode 146 are formed on the channel layer 140.
- Channel layer 140 forms a channel region at a position located above p body region 120. This “channel layer” may also be referred to as a “buried layer”.
- a source electrode 126 is formed on the surface of the n + source region 124, and a drain electrode 128 is formed on the back surface of
- a rating (or “maximum rating”) that defines specifications, performance, and usage limits under specified conditions, and are used within the range of the rated value. Normal operation of the device, including long-term reliability, is guaranteed.
- “absolute maximum rating” refers to a value that causes permanent destruction or the like if this value is exceeded even for a moment. Therefore, the “absolute maximum rating” is generally set to a larger range than “rating” or “maximum rating”.
- rating maximum rating
- absolute maximum rating absolute maximum rating
- a rated voltage Vgcc related to the gate is defined, and in general, operation is guaranteed in both positive and negative polarities.
- the gate rated voltage of the ON side polarity of the MIS type semiconductor device is defined as Vgcc.
- the gate rated voltage of the polarity on the OFF side of the MIS type semiconductor device is defined as Vgcc ⁇ .
- Vgcc is generally in the range of 20 ⁇ 2V. With the positive gate voltage Vg on the ON side, the operation is guaranteed within a range where Vgcc is the upper limit.
- Vgcc ⁇ is the lower limit.
- operation is guaranteed within a range where the lower limit is ⁇ Vgcc to ⁇ Vgcc / 2 depending on the semiconductor device and its application. That is, in general, Vgcc ⁇ is set in a range of ⁇ Vgcc to ⁇ Vgcc / 2.
- the inventors of the present application have newly found that when a large voltage as described above is applied to the gate insulating film, the threshold voltage (Vth) becomes unstable under certain conditions, and a phenomenon that varies with time is observed. It was. In particular, it has been clarified by the present inventor that a negative shift due to application of a negative voltage at a high temperature is significant.
- the present invention has been made in view of the above circumstances, and a main object thereof is to provide a semiconductor device that suppresses a phenomenon in which Vth varies with time.
- the semiconductor device of the present invention includes a semiconductor body region, a gate insulating film, a channel layer having a semiconductor polarity opposite to that of the semiconductor body region, and the gate insulating film provided between the semiconductor body region and the gate insulating film.
- MIS type semiconductor device having a gate electrode provided in contact with the semiconductor device, wherein the gate voltage at which the band bending of the semiconductor body region becomes zero is a flat band voltage Vfb, and the off-polarity gate rating of the semiconductor device When the voltage is defined as Vgcc ⁇ , Vfb of the semiconductor device is equal to or less than Vgcc ⁇ .
- the Vfb of the semiconductor device is either ⁇ Vgcc / 2 or ⁇ 2Eg. Or less than or equal to the lower one.
- the semiconductor impurity concentration of the channel layer is higher than 10 18 cm ⁇ 3 and lower than or equal to 5 ⁇ 10 19 cm ⁇ 3 and has an area.
- Per semiconductor impurity charge concentration is equal to or higher than Eg ⁇ Ci [C / cm 2 ].
- the Qf is equal to or equal to 1.5 Eg ⁇ Ci [C / cm 2 ]. That's it.
- the gate insulating film capacitance of the semiconductor device is defined as Ci
- the fixed charge density related to the gate insulating film is defined as Qf
- the work function difference between the semiconductor body region and the gate electrode is defined as ⁇ ms
- Qf ⁇ The value of ⁇ ms ⁇ Ci is equal to or greater than 2Eg ⁇ Ci [C / cm 2 ].
- a gate insulating film capacitance of the semiconductor device when defining a gate insulating film capacitance of the semiconductor device as Ci, a semiconductor impurity charge concentration per area of the channel layer as Qb, and a work function difference between the semiconductor body region and the gate electrode as ⁇ ms,
- the semiconductor impurity concentration of the channel layer is greater than 10 18 cm ⁇ 3 and 5 ⁇ 10 19 cm ⁇ 3 or less, and the value of Qb ⁇ ms ⁇ Ci is equal to or equal to 2Eg ⁇ Ci [C / cm 2 ] That's it.
- the semiconductor body region and the channel layer are made of silicon carbide.
- Vfb is ⁇ 10 volts (V) or less.
- a semiconductor device driving method of the present invention includes a semiconductor body region, a gate insulating film, a channel layer having a semiconductor polarity opposite to the semiconductor body region, provided between the semiconductor body region and the gate insulating film, and A method of driving an MIS type semiconductor device having a gate electrode provided in contact with the gate insulating film, wherein a gate voltage at which the band bending of the semiconductor body region becomes zero is a flat band voltage Vfb, and the semiconductor device is turned off.
- Vgcc ⁇ When the rated voltage of the side polarity gate is defined as Vgcc ⁇ , the rated voltage of the gate polarity of the semiconductor device is defined as Vgcc, and the threshold voltage of the semiconductor device is defined as Vth, the magnitude between Vth and Vgcc ⁇ And a step of applying a voltage having a magnitude between Vth and Vgcc to the gate electrode.
- Vfb of the serial semiconductor device Vgcc - to be equal to or less.
- Vfb of the semiconductor device is equal to or lower than the lower of ⁇ Vgcc / 2 and ⁇ 2Eg.
- Vfb is set to be substantially equal to or less than Vgcc ⁇ , so that Vth that becomes a problem when a large voltage corresponding to the lower limit or upper limit of the rated voltage is applied to the gate electrode varies. The phenomenon is avoided.
- Sectional drawing of the other semiconductor device (SiC lateral type MISFET) 101 concerning this embodiment The figure which shows the voltage dependence of the Vth lifetime of the SiC horizontal type MISFET which concerns on a prior art example.
- mold semiconductor device which concerns on a prior art example The figure which shows the CV characteristic of SiC lateral type MISFET which concerns on this embodiment (A) is a figure which shows the stress voltage dependence of the Vth variation
- Sectional drawing which shows typically the structure of the semiconductor device 102 which concerns on other embodiment of this invention. Sectional drawing of the semiconductor device (SiC vertical MISFET) 1100 which concerns on a prior art example
- Vth threshold voltage
- Vgcc ⁇ typically ⁇ Vgcc or ⁇ Vgcc / 2
- the hole barrier against SiO 2 is as low as about 2.9 V compared to about 4.7 V in the case of Si. For this reason, even if the number of hole traps (or trap efficiency) is about the same as that of a Si semiconductor, it is expected that the total amount of holes that can be injected into SiO 2 is large. In fact, it is generally known that the number of hole traps related to the SiO 2 film of the SiC semiconductor is larger than that of the Si semiconductor.
- the lateral MISFET includes a SiC semiconductor substrate 10 and an n ⁇ type drift layer 11 formed on the SiC semiconductor substrate 10.
- a p-type body region 20 exists on the upper surface side of the n ⁇ -type drift layer 11, and an n-type source region 24 and a drain region 30 are formed in the p-type body region 20 apart from each other.
- a channel layer 40 (or a buried layer) is disposed on p type body region 20 so as to partially overlap source region 24 and drain region 30.
- This horizontal MISFET is basically the same as the vertical MISFET shown in FIG. 9 except that the n-type source region 24 and the drain region 30 are symmetrical with respect to the gate electrode 46.
- a phenomenon was observed in which Vth changes with time when a voltage is applied to the gate electrode.
- FIG. 3 shows the voltage dependence of the lifetime of Vth when a negative voltage (Vg) is applied to the gate electrode at a high temperature of 150.degree.
- the vertical axis of the graph of FIG. 3 is the lifetime, and the horizontal axis is a value obtained by subtracting 1 from the reciprocal of the value obtained by subtracting Vfb from the gate voltage Vg.
- the lifetime here is the time for the fluctuation amount of Vth to reach ⁇ 0.3 V corresponding to 10% fluctuation. From the extrapolation in the figure, it has become clear that the numerical value on the horizontal axis in the figure needs to exceed 2 in order to guarantee a lifetime of 10 years (87600 hours ⁇ about 1 ⁇ 10 5 h). That is, ⁇ 1 / (Vg ⁇ Vfb) needs to exceed 2. This leads to Vfb ⁇ Vg ⁇ 0.5.
- Vfb is a flat band voltage of the semiconductor device.
- the flat band voltage Vfb is defined as a gate voltage at which the band bending of the semiconductor body region having the channel layer on the side in contact with the gate insulating film (p-type body region 20 in the example of the structure in FIG. 2) becomes zero.
- Vo Qo / Ci.
- Ci is a gate insulating film capacitance per unit area
- Qo is a charge amount per unit area obtained by normalizing Vo to Ci.
- the inventors have found that the negative shift amount of Vth when a negative voltage is applied to the gate electrode is approximately how much the Vg is shifted in the negative direction with respect to Vfb (in the concept of positive / negative of a number line). I found that it depends on how much it is). This point will be described in more detail with reference to FIGS. 6A and 6B later.
- the inventors consider the mechanism of the negative shift of Vth as follows. That is, carriers (in this case, holes) induced near the semiconductor surface are introduced into the gate insulating film by a process such as thermal excitation. In a MIS type semiconductor device such as Si or SiC having a general channel layer, it was confirmed by simulation or the like that most of the channel layer was depleted particularly when the gate voltage was negative. The positive charges generated at this time are space charges and cannot move to the insulating film. The positive carriers that can move to the gate insulating film increase in proportion to
- the above-described Qo is an amount obtained by multiplying the carrier charge density induced in the vicinity of the surface of the semiconductor body region by the injection efficiency into the gate insulating film and the trap efficiency in the gate insulating film, and is a threshold value causing Vth variation. It is basically thought that
- the carrier charge density induced in the vicinity of the surface of the semiconductor body region is suppressed to a predetermined amount or less within the operation guarantee range of the semiconductor device.
- a semiconductor device in which the carrier charge density induced in the vicinity of the surface of the semiconductor body region is suppressed to a predetermined amount or less in the guaranteed operation range of the semiconductor device here, in particular, the guaranteed range on the negative gate voltage side
- the Vfb there has been practically no semiconductor device in which is approximately equal to or lower than the lower limit of the guaranteed range (typically -Vcc or -Vcc / 2).
- Vfb As will be described below, it is difficult to set Vfb to be substantially equal to or lower than the lower limit of the guaranteed range, or various disadvantages are caused by doing so. This is because it has not been conventionally known. Therefore, until the present invention was made, there was no motivation or idea to set Vfb to a value lower than the conventional value.
- Vfb is substantially equal to or lower than the lower limit of the guaranteed range on the negative side of the gate voltage.
- being “equivalent” to a certain value means having a size within a range of ⁇ 10% around the value.
- Vfb of the semiconductor device is simply expressed by the following equation.
- Vfb ⁇ ms ⁇ (Qf + Qb) / Ci (Formula 1)
- ⁇ ms is a work function difference between the gate electrode and the semiconductor body region
- Qf is a fixed charge density related to the gate insulating film
- Qb is a space charge density of the channel layer
- Ci is a gate insulating film capacitance.
- the first term ⁇ ms is determined by the vacuum work function of the gate electrode material.
- Si since doped polysilicon is normally used for the gate electrode, the range is approximately ⁇ 1.1 V ⁇ ⁇ ms ⁇ + 1.1 V depending on the polarity and concentration of the dopant.
- 1.1 V is a band gap value of the Si semiconductor.
- n + doped polysilicon, aluminum, or the like is usually used for the gate electrode.
- the range is approximately ⁇ 3.2V ⁇ ⁇ ms ⁇ + 0.2V.
- the vacuum work function is generally in the range of 4 V to 5.3 V when it is a material that is practically used from the viewpoint of performance and reliability. Therefore, regardless of the type of semiconductor, ⁇ ms is equal to or lower than the band gap of Si. In this specification, the bolt (V) is consistently used as the unit of the band gap Eg and the work function difference ⁇ ms.
- the Qf of the second term greatly depends on the quality of the interface between the gate insulating film and the semiconductor. Since the reduction of Qf is directly related to the improvement of the performance and reliability of the semiconductor device, efforts to reduce Qf have been repeated in the past. In particular, in the case of Si, Qf has been reduced to an extremely low value by using a high-quality thermal SiO 2 film for the gate insulating film. Specifically, when re-expressed in a unit obtained by dividing Qf by the elementary charge q, it was reduced to a level below 10 11 / cm 2 .
- the value of ⁇ ms-Qf / Ci which is the sum of the first term and the second term, is determined by the constituent material of the MISFET, and the value is about the band gap of the semiconductor constituting the MISFET. Is in range.
- Qb in the third term is the space charge density per unit area in the channel layer provided under the gate insulating film.
- Qb is basically not restricted by the material physical properties, but in practice, it cannot be made so large due to restrictions on the device operation design.
- the conventional Qb / Ci value is generally suppressed to about the band gap of the semiconductor or less.
- the value of Qb / Ci is about 3.1V. This is equal to or lower than 3.2 V, which is the Eg value of the 4H—SiC semiconductor.
- a semiconductor device 100 shown in FIG. 1 is an example of a silicon carbide (hereinafter, SiC) power semiconductor device having a vertical MIS structure.
- the semiconductor device 100 includes a first conductivity type SiC semiconductor substrate 10 and a first conductivity type first SiC semiconductor layer 11 formed on a surface 10 a of the substrate 10.
- the SiC semiconductor substrate 10 of the present embodiment is an n + substrate (n + SiC substrate), and the first SiC semiconductor layer 11 is an n ⁇ drift layer. That is, in the present embodiment, the first conductivity type is n-type and the second conductivity type is p-type. The n-type and p-type may be interchanged.
- n + ” or n ⁇ represents the relative concentration of the dopant.
- N + means that the n-type impurity concentration is higher than “n”
- n ⁇ means that the n-type impurity concentration is lower than “n”.
- a second conductivity type body region (well region) 20 is formed in the first SiC semiconductor layer 11.
- a source region 24 of the first conductivity type is formed in the body region 20.
- the body region 20 is p-type, and the source region 24 is n + -type.
- a p-type contact region 22 is formed in the body region 20.
- a source electrode 26 is formed on the source region 24.
- the source electrode 26 is formed on the surface of the n + source regions 24 and the p contact region 22, n + source region 24 and p are both in electrical contact in the contact region 22, but each They may be contacted separately.
- the present invention is not limited to the FET as long as it is a MIS type structure, that is, a so-called MIS capacitor having no source and drain may be used.
- a first conductivity type SiC semiconductor channel layer 40 is formed in contact with at least part of the p body region 20 and the n + source region 24.
- the channel layer 40 in this embodiment is formed by epitaxial growth on the n ⁇ drift layer 11 in which the p body region 20 and the n + source region 24 are formed.
- the channel layer 40 includes a channel region 42 at a position located above the p body region 20.
- a gate insulating film 44 is formed on the channel layer 40.
- a gate electrode 46 is formed on the gate insulating film 44.
- a drain electrode 28 is formed on the back surface 10 b of the substrate 10.
- the channel layer 40 has an impurity concentration of 2.5 ⁇ 10 18 cm ⁇ 3 and a thickness of 30 nm. In a normal channel layer, most of them are depleted particularly under a negative gate voltage. Therefore, the value of the space charge density Qb is obtained as 12 ⁇ 10 ⁇ 7 C / cm 2 from the product of the impurity concentration, the thickness, and q.
- the maximum depletion layer thickness Wm 2 ( ⁇ s ⁇ ⁇ f / q / Nb) 1/2 may be used.
- ⁇ s is the dielectric constant of the semiconductor
- ⁇ f is the Fermi level of the semiconductor.
- the above simple analytical expression is based on the assumption that the impurity concentration is uniform in the thickness direction. Strictly speaking, the value of the space charge density Qb cannot be obtained analytically when the impurity concentration of the channel layer is not uniform. However, even in that case, Qb may be obtained from the same impurity concentration profile integrated over the depletion layer.
- the gate insulating film 44 in this embodiment is a 70 nm thick nitrided oxide film, and the gate insulating film capacitance Ci is 4.9 ⁇ 10 ⁇ 8 F / cm 2 . Therefore, from (Equation 1), the shift amount of Vfb caused by Qb is estimated to be ⁇ 24V.
- n + polysilicon is used for the gate electrode, and the impurity concentration of the semiconductor body region 20 is 2 ⁇ 10 18 cm ⁇ 3 , so the work function difference ⁇ ms is about ⁇ 3V. Further, the shift amount of Vfb caused by Qf is around ⁇ 1V. Therefore, when the above numerical example (calculated value) is substituted into the right side of (Expression 1), Vfb of this embodiment is estimated to be approximately ⁇ 28V.
- the impurity concentration of the semiconductor body region 20 is not the impurity concentration in the transition region with another semiconductor region, but the impurity concentration at a position sufficiently away from the transition region with another semiconductor region.
- the impurity concentration changes sharply according to the position, but the impurity concentration at a position sufficiently away from the transition region does not change greatly according to the position.
- the impurity concentration in the vicinity of the surface of the body region 20 near the center of the body region 20 where the concentration profile is stable from the first SiC semiconductor layer 11 and the source region 24 Point to.
- the semiconductor impurity concentration basically does not change in the lateral direction.
- the impurity concentration of the channel layer in the present embodiment refers to the impurity concentration at a position directly above the lateral position that defines the impurity concentration of the body region 20.
- FIG. 5 is a measurement example of CV characteristics according to the semiconductor device 100 of the present embodiment.
- Vfb (indicated by an arrow in the figure) of the same measurement example is estimated to be about ⁇ 13 V, but this value is considerably higher than the calculated value.
- Vfb in the same measurement example is about ⁇ 7 V, which is the channel layer Qb value in the above-mentioned conventional example 1.6 ⁇ 10 ⁇ 7 C / cm 2.
- the value of Vfb calculated from the above is almost the same.
- FIG. 6 (a) shows the dependence of Vth on the negative voltage when a negative voltage (Vg) is applied as a stress voltage for 16 minutes to a lateral MISFET having characteristics of Vfb ⁇ 7V, ⁇ 11V and ⁇ 12V at a high temperature of 150 ° C. Showing gender.
- FIG. 6B shows the negative voltage dependence of Vth compared by removing Vfb from the stress voltage.
- FIG. 7 shows the voltage dependence of the lifetime of Vth when a negative voltage (Vg) is applied to a lateral MISFET having the characteristics of Vfb ⁇ 7V and ⁇ 12V.
- Vg negative voltage
- Vo the value of Vo is approximately 0.4 V to 0.5 V as in the case of Vfb ⁇ -7V. I can estimate.
- the constant Vo is a relatively small value, but is not limited to the value estimated in the present embodiment.
- the first specific configuration for realizing the semiconductor device having Vfb as described above is that the impurity charge concentration Qb per area in the channel layer of the semiconductor device is equal to or higher than Eg ⁇ Ci C / cm 2. It is to be. As Qb is increased to a level equal to or higher than Eg ⁇ Ci C / cm 2 , Vfb also shifts negatively to a value that is equal to or higher than 2 Eg (unit is V) and does not exist in the conventional example. It is. Hereinafter, the reason will be described.
- the value of “ ⁇ ms ⁇ Qf / Ci”, which is the sum of the first term and the second term on the right side of Equation 1, is in the range of about the band gap (Eg) of the semiconductor constituting the MISFET. is there.
- the possible range of ⁇ ms is approximately ⁇ 3.2V to 0.2V.
- the range that Qf / q can take is about 3 ⁇ 10 11 / cm 2 to 1 ⁇ 10 12 / cm 2 , so the range of Qf / Ci is about ⁇ 3 V to ⁇ 1 V. Become. Therefore, the value of “ ⁇ ms ⁇ Qf / Ci” is approximately ⁇ 0.7 Eg or more and Eg or less.
- the possible range of ⁇ ms is approximately ⁇ 1.1V to 1.1V.
- the possible range of Qf / q is about 3 ⁇ 10 10 / cm 2 or less
- the range of Qf / Ci is about ⁇ 0.1 V or more and 0 or less. Therefore, the value of “ ⁇ ms ⁇ Qf / Ci” is approximately ⁇ Eg or more and Eg or less.
- Equation 2 is transformed as follows.
- Qb 1.3Eg ⁇ Ci (Formula 3)
- Equation 2 when substituting -Eg, which is the lower limit value of ⁇ ms-Qf / Ci, Equation 2 is transformed as follows.
- Vfb when Qb is set to Eg ⁇ Ci C / cm 2 or more, Vfb can be set to a value lower than ⁇ 2 Eg. In the case of SiC, it is preferable that Qb is 1.3 Eg ⁇ Ci C / cm 2 or more.
- the Vfb shift due to Qb corresponding to the third term of (Equation 1) is The voltage is about -5V, which is about 1.5 times higher than that of the conventional example.
- Vfb becomes about -9V. Therefore, in the semiconductor device having Vgcc of about 18V, the Vfb value satisfies that it is equal to or less than ⁇ Vgcc / 2.
- the Vfb shift due to the Qb is about ⁇ 6V.
- Vfb is about ⁇ 10V, and even when Vgcc is 20V, the Vfb value is equal to or less than ⁇ Vgcc / 2.
- the channel layer is degenerated and depletion becomes very difficult, which is not suitable for the purpose of the present invention.
- the thickness of the channel layer is required to be at least about 10 nm.
- the impurity concentration is increased to a range exceeding 5 ⁇ 10 19 cm ⁇ 3 , the resulting Vfb shift becomes, for example, approximately ⁇ 160 V or less in the present embodiment.
- demerits such as the short channel effect due to the introduction of the channel layer can be sufficiently controlled within the range of Qb described above.
- the fixed charge density Qf related to the gate insulating film of the semiconductor device is equal to or higher than 1.5 Eg ⁇ Ci C / cm 2. That is.
- ⁇ ms ⁇ Qb / Ci is set to about 0.5 Eg, the explanation given using Expressions 2 to 4 also holds true for estimating the lower limit of the preferred range of the fixed charge density Qf.
- Vfb is also equal to or greater than 1.5 Eg. It shifts in the direction and becomes the value of Vfb which is not in the conventional example.
- the Qf is about 2.4 ⁇ 10 ⁇ 7 C / cm 2 .
- increasing Qf is much easier than increasing Qf / q to 10 13 / cm 2 , for example, compared to reducing Qf.
- the effect by the work function difference ⁇ ms in the first term of (Expression 1) is used.
- the vacuum work function ⁇ m of the gate electrode needs to be smaller, in other words, closer to the vacuum level.
- a third specific configuration is considered that combines the effect of Qf in the second term. That is, the value of Qf ⁇ ms ⁇ Ci is equal to or greater than 2Eg ⁇ Ci C / cm 2 . According to this means, when an electrode having a smaller ⁇ ms is used, it is not necessary to unnecessarily increase the Qf by the smaller ⁇ ms, and the above-mentioned various disadvantages that may be caused by raising the Qf to a high level. Can be reduced.
- the value of Qb ⁇ ms ⁇ Ci is equal to or greater than 2Eg ⁇ Ci C / cm 2 . According to this configuration, when an electrode having a smaller ⁇ ms is used, it is not necessary to unnecessarily increase the Qb by the amount of the smaller ⁇ ms, and the various disadvantages described above caused by increasing the Qb can be reduced. .
- the semiconductor device be of a normally-off type (Vth> 0 V in the case of the n-channel MISFET of this embodiment).
- Vth can be easily increased by using a general technique such as increasing the impurity concentration of the semiconductor body region (p-type body region 20 in the present embodiment), for example, in accordance with an analytical expression of the depletion approximation ( Shift in the positive direction).
- the present technique has an MIS type structure, it can be applied not only to the present embodiment but also to the embodiments described below.
- the present invention has been described with reference to the preferred embodiments. However, these descriptions are not limitations on the invention, and various modifications can be made to the above-described embodiments.
- the SiC semiconductor has been described as an example, but other wide band gap semiconductors or Si semiconductors may be used.
- the n-channel MIS type semiconductor device has been mainly described.
- the present invention is naturally applicable to a p-channel MISFET. In this case, n and p of the semiconductor polarity, positive and negative signs of voltage, etc., high (positive direction) and low (negative direction) in the comparison of the magnitude of the voltage, etc. Replace it appropriately by replacing it.
- the Vth shift in question is a positive shift caused by electrons.
- the degree of damage per piece expressed in terms of trap efficiency is expected to be smaller for electrons than for holes.
- the importance of reliability issues related to Vth fluctuations and the like is not limited to SiC and the like, which are difficult to improve the quality of the gate insulating film, and the present invention.
- the significance of is something that never fades.
- a semiconductor device 102 shown in FIG. 8 is an embodiment of the present invention in a silicon (hereinafter referred to as Si) semiconductor device having a MIS structure, and the Si semiconductor substrate 210 is p-type having a first semiconductor polarity.
- the semiconductor substrate 210 corresponds to the body region referred to in the present invention.
- a channel layer 240 having the second semiconductor polarity is formed between the body region (semiconductor substrate) 210 and the gate insulating film 244 formed thereon, and on the gate insulating film 244, A gate electrode 246 is formed.
- a source region 224 and a drain region 230 having a second semiconductor polarity are formed in the semiconductor substrate 210.
- the first semiconductor polarity (conductivity type) is p-type and the second semiconductor polarity is n-type, but the n-type and p-type may be interchanged.
- the present invention only needs to be a MIS type structure, and of course, a so-called MIS capacitor having no source and drain may be used.
- the gate insulating film 244 is made of, for example, a high dielectric constant insulating film material, and its SiO 2 equivalent film thickness is 3.5 nm.
- high dielectric constant insulating films which are being applied to gate insulating films in recent years, are not only inferior in film quality as compared to conventional thermal SiO 2 films, but also generally have a smaller energy gap and are therefore much smaller in semiconductors. Since the energy barrier seen from the carrier is low, there is a concern that reliability problems such as Vth fluctuation become more serious.
- the channel layer 240 is formed by ion implantation, for example, and has an impurity concentration of 7.5 ⁇ 10 18 cm ⁇ 3 and a depth of 25 nm.
- the gate insulating film thickness is small as in the present embodiment, in order to obtain the effect according to the present invention, it is necessary to increase the impurity concentration in the channel layer 240 to the second half of the 10 18 cm ⁇ 3 level.
- the space charge density Qb can be roughly estimated by the method described in the first embodiment.
- the impurity concentrations of the body region and the channel layer are sufficiently separated from the source region 224 and the drain region 230.
- n + polysilicon is used for the gate electrode, and the impurity concentration of the semiconductor body region 210 is 2 ⁇ 10 18 cm ⁇ 3 .
- the work function difference ⁇ ms is about ⁇ 1.1V.
- the shift amount of Vfb caused by Qf is approximately in the range of 0V to -0.1V.
- the value of conventional Qb / Ci is generally suppressed to about the band gap of the semiconductor or less. Therefore, when the above numerical example is substituted into the right side of (Formula 1), Vfb in the conventional example is equal to or higher than ⁇ 2.2V.
- the gate rating Vgcc is, for example, 1.8V. Since the band gap Eg of Si is about 1.1 V, in this embodiment, ⁇ 2 Eg is the lower of ⁇ 2 Eg and ⁇ Vgcc / 2, which is the lower limit value of the guaranteed operation range.
- Vfb is equal to or less than ⁇ 2Eg, which is not in the conventional example.
- the first specific configuration for realizing the semiconductor device having Vfb as described above is that the impurity charge concentration Qb per area in the channel layer of the semiconductor device is equal to or higher than Eg ⁇ Ci C / cm 2. It is to be. As Qb is increased to a level not found in the conventional example equal to or higher than Eg ⁇ Ci C / cm 2 , Vfb is negatively reduced to a low value not found in the conventional example, which is equal to or lower than ⁇ 2 Eg. Because it shifts.
- Vfb shift due to Qb corresponding to the third term of (Equation 1) is the conventional example.
- the voltage is about -1.6 V, which is about 1.5 times higher than the above.
- Vfb is about -2.7V, which is equal to or less than -2Eg. Meet.
- a second specific configuration for realizing the semiconductor device having Vfb as described above has a fixed charge density Qf related to the gate insulating film of the semiconductor device equal to or higher than 1.5 Eg ⁇ Ci C / cm 2. Is to do.
- Qf charge density
- Vfb is also equal to or greater than 1.5 Eg. This is because the value shifts in the direction and becomes a value of Vfb which is not in the conventional example.
- the Qf is about 16 ⁇ 10 ⁇ 7 C / cm 2 , and this is expressed as an elementary quantity q
- a thermal SiO 2 film can be used as its gate insulating film, and therefore, when expressed in a unit (Qf / q) obtained by dividing Qf by an elementary quantity q, it is less than 10 11 / cm 2 .
- the effect by the work function difference ⁇ ms of the first term of (Expression 1) is used.
- the vacuum work function ⁇ m of the gate electrode is small by about 1 V, that is, it needs to be closer to the vacuum level.
- the vacuum work function of most practical gate electrode materials, including the conventional n + polysilicon electrode is in the range of approximately 4V to 5.3V and is within or far away from the Si bandgap. Most of them correspond to no range. Therefore, the negative shift amount of Vfb only by changing ⁇ ms has the above limit.
- a third specific configuration is considered that combines the effect of Qf in the second term. That is, the value of Qf ⁇ ms ⁇ Ci is equal to or greater than 2Eg ⁇ Ci C / cm 2 . According to this configuration stage, when an electrode having a smaller ⁇ ms is used, it is not necessary to increase the Qf unnecessarily by the smaller ⁇ ms. Disadvantages can be reduced.
- the value of Qb ⁇ ms ⁇ Ci is equal to or greater than 2Eg ⁇ Ci C / cm 2 . According to this configuration, when an electrode having a smaller ⁇ ms is used, it is not necessary to unnecessarily increase the Qb by the amount of the smaller ⁇ ms, and the various disadvantages described above caused by increasing the Qb can be reduced. .
- the present invention has been described with reference to the preferred embodiments. However, these descriptions are not limitations on the invention, and various modifications can be made to the above-described embodiments.
- an Si semiconductor has been described above as an example, an SiC semiconductor or other wide band gap semiconductor may be used.
- an n-channel MIS type semiconductor device has been mainly described.
- the present invention can also be applied to a p-channel MISFET. In this case, n and p of the semiconductor polarity, positive and negative signs of voltage, etc., high (positive direction) and low (negative direction) in the comparison of the magnitude of the voltage, etc. Replace it appropriately by replacing it.
- the method of driving the semiconductor device in each of the above embodiments includes a step of applying a voltage having a magnitude between Vth and Vgcc ⁇ to the gate electrode, and applying a voltage having a magnitude between Vth and Vgcc to the gate.
- Vfb of the semiconductor device is equal to or less than Vgcc ⁇ . According to this driving method, even when a voltage having a lower limit in the compensation range is applied to the gate electrode, Vfb is set lower than the lower limit of the operation guarantee range, and therefore Vfb is subtracted from the gate voltage. The value does not become positive, and as a result, the Vth fluctuation is suppressed.
- Vfb of the semiconductor device is equal to or lower than the lower of ⁇ Vgcc / 2 and ⁇ 2Eg.
- the present invention is suitably used for various control devices and drive devices using, for example, power MOSFETs and power MOSFETs.
Abstract
Description
Vfb=Φms-(Qf+Qb)/Ci ・・・(式1)
Φmsはゲート電極と半導体ボディ領域との仕事関数差、Qfはゲート絶縁膜に係る固定電荷密度、Qbはチャネル層の空間電荷密度、Ciはゲート絶縁膜容量である。
図1の模式的断面図を参照しながら、本発明の実施形態の一例に係る半導体装置100について説明する。
Qb≧(Φms-Qf/Ci+2Eg)Ci ・・・(式2)
Qb≧1.3Eg×Ci ・・・(式3)
Qb≧Eg×Ci ・・・(式3)
次に、図8を参照しながら、本発明の第2の実施形態に係る半導体装置102について説明する。
11,111 第1の半導体層(ドリフト層)
20,120 ボディ領域(ウェル領域)
22,122 コンタクト領域
24,124,224 ソース領域
26,126 ソース電極
28,128 ドレイン電極
30,230 ドレイン領域
40,140,240 チャネル層(埋込層、チャネルエピ層)
42 チャネル領域
44,144,244 ゲート絶縁膜
46,146,246 ゲート電極
100 半導体装置
101 横型SiC-MISFET
102 半導体装置
1100 半導体装置
Claims (10)
- 半導体ボディ領域、
ゲート絶縁膜、
前記半導体ボディ領域と前記ゲート絶縁膜との間に設けられ、前記半導体ボディ領域とは逆の半導体極性のチャネル層、及び
前記ゲート絶縁膜と接して設けられたゲート電極を有するMIS型の半導体装置であって、
前記半導体ボディ領域のバンド曲がりがゼロとなるゲート電圧をフラットバンド電圧Vfb、前記半導体装置のオフ側の極性のゲートの定格電圧をVgcc-と定義するとき、
前記半導体装置のVfbがVgcc-と同等かそれ以下である、半導体装置。 - 前記半導体ボディ領域のバンドギャップをEg、前記半導体装置のオン側の極性のゲートの定格電圧をVgccと定義するとき、
前記半導体装置のVfbが-Vgcc/2と-2Egのいずれか低い方と同等かそれ以下である、請求項1に記載の半導体装置。 - 前記半導体装置のゲート絶縁膜容量をCiと定義するとき、
前記チャネル層の半導体不純物濃度が1018cm-3より高く5×1019cm-3以下であって、かつ、面積当りの半導体不純物電荷濃度がEg×Ci[C/cm2]と同等かそれ以上である、請求項2に記載の半導体装置。 - 前記半導体装置のゲート絶縁膜容量をCi、前記ゲート絶縁膜に係る固定電荷密度をQfと定義するとき、
前記Qfが1.5Eg×Ci[C/cm2]と同等かそれ以上である、請求項2に記載の半導体装置。 - 前記半導体装置のゲート絶縁膜容量をCi、前記ゲート絶縁膜に係る固定電荷密度をQf、前記半導体ボディ領域と前記ゲート電極との仕事関数差をΦmsと定義するとき、
Qf-Φms×Ciの値が2Eg×Ci[C/cm2]と同等かそれ以上である、請求項2に記載の半導体装置。 - 前記半導体装置のゲート絶縁膜容量をCi、前記チャネル層の面積当りの半導体不純物電荷濃度をQb、前記半導体ボディ領域と前記ゲート電極との仕事関数差をΦmsと定義するとき、
前記チャネル層の半導体不純物濃度が1018cm-3より大きく5×1019cm-3以下であって、かつ、Qb-Φms×Ciの値が2Eg×Ci[C/cm2]と同等かそれ以上である、請求項2に記載の半導体装置。 - 前記半導体ボディ領域及び前記チャネル層が炭化珪素により構成される、請求項1から6のいずれかに記載の半導体装置。
- Vfbが-10ボルト以下である請求項7に記載の半導体装置。
- 半導体ボディ領域、ゲート絶縁膜、前記半導体ボディ領域と前記ゲート絶縁膜との間に設けられ、前記半導体ボディ領域とは逆の半導体極性のチャネル層、及び、前記ゲート絶縁膜と接して設けられたゲート電極を有するMIS型の半導体装置の駆動方法であって、
前記半導体ボディ領域のバンド曲がりがゼロとなるゲート電圧をフラットバンド電圧Vfb、前記半導体装置のオフ側の極性のゲートの定格電圧をVgcc-、前記半導体装置のオン側の極性のゲートの定格電圧をVgcc、前記半導体装置の閾値電圧をVthと定義するとき、
VthとVgcc-との間の大きさの電圧を前記ゲート電極に印加する工程と、
VthとVgccとの間の大きさの電圧を前記ゲート電極に印加する工程と、
を含み、
前記半導体装置のVfbがVgcc-と同等かそれ以下である、半導体装置の駆動方法。 - 前記半導体ボディ領域のバンドギャップをEgと定義するとき、
前記半導体装置のVfbが-Vgcc/2と-2Egのいずれか低い方と同等かそれ以下である、請求項9に記載の半導体装置の駆動方法。
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