WO2011117916A1 - 電子デバイスの製造方法およびスパッタリング方法 - Google Patents
電子デバイスの製造方法およびスパッタリング方法 Download PDFInfo
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- WO2011117916A1 WO2011117916A1 PCT/JP2010/002052 JP2010002052W WO2011117916A1 WO 2011117916 A1 WO2011117916 A1 WO 2011117916A1 JP 2010002052 W JP2010002052 W JP 2010002052W WO 2011117916 A1 WO2011117916 A1 WO 2011117916A1
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- substrate
- target
- shielding member
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- shutter
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Images
Classifications
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3441—Dark space shields
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0068—Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
- H01J2237/3323—Problems associated with coating uniformity
Definitions
- the present invention relates to a method for manufacturing an electronic device such as a semiconductor device or a magnetic storage medium, and a sputtering method.
- a sputtering method for depositing a thin film on a substrate uses a vacuum container evacuated to a vacuum, and a target holder that holds a deposition source called a target made of a material to be deposited on the substrate in the vacuum container, and the substrate is placed.
- a substrate holder with a surface to be cut is installed, and an inert gas such as Ar, an inert gas such as nitrogen, or a process gas composed of a mixed gas thereof is introduced into the vacuum vessel, and a high voltage is applied to the target.
- This is a deposition method in which a target material is attached to a substrate supported by a substrate holder by utilizing the sputtering phenomenon of the target by charged particles in the discharge plasma by generating plasma.
- a target material having a negative potential When positive ions in the plasma are incident on a target material having a negative potential, atoms and molecules of the target material are blown off from the target material. This is called sputtered particles.
- the sputtered particles adhere to the substrate to form a film containing the target material.
- an openable / closable shielding plate called a shutter is usually provided between a target material and a substrate.
- the shutter is mainly used for three purposes.
- the first purpose is to perform pre-sputtering.
- plasma is not generated simultaneously with the application of a high voltage, but is generated with a delay time of about 0.1 seconds from the voltage application.
- plasma is not generated even when a voltage is applied, or even if generated, a phenomenon such as plasma being unstable immediately after the start of discharge occurs. Due to these phenomena, there arises a problem that a film cannot be formed with a stable film thickness and film quality.
- the shutter is started to perform so-called pre-sputtering, in which the discharge is started with the shutter closed and the shutter is opened after the discharge is stabilized so that the sputter particles are deposited on the substrate. Is used.
- the second purpose is to perform conditioning. Conditioning is not the purpose of depositing sputtered particles on the substrate, but a discharge performed to stabilize the characteristics of the deposited film.
- the deposition is stable.
- the inner surface of the vacuum container in the same state as when the film is formed by continuous film formation.
- sputtered particles adhere not only to the inner surface of the vacuum vessel but also to the substrate mounting surface of the substrate holder.
- the substrate mounting surface of the substrate holder is hidden from the sputtering surface of the target, and the shutter is provided near the substrate holder so that the inner surface of the vacuum vessel is not hidden.
- An inert gas and a reactive gas are introduced into the vacuum vessel to prevent discharge while preventing film formation.
- nitrides and oxides adhere to the inner surface of the vacuum vessel.
- Conditioning may also occur during continuous film formation for production, and discharge under conditions different from production conditions. For example, when a highly stressed film is continuously deposited on the substrate by the reactive sputtering method, the film attached to the inside of the vacuum vessel is peeled off by the stress. The peeled film adheres to the substrate and deteriorates the characteristics of the electronic device. In order to prevent this, a metal film having a small stress may be periodically formed by a non-reactive sputtering method. For example, when TiN is continuously formed, the Ti film is periodically conditioned. If only TiN film is continuously formed, the TiN film attached to the deposition shield or the like inside the vacuum vessel is peeled off, but this can be prevented by conditioning Ti film formation periodically.
- the third purpose is to perform target cleaning.
- Target cleaning is performed using a shutter when a contaminated or oxidized target surface is previously sputtered to remove a contaminated or oxidized portion of the target before continuous film formation for production.
- the target is formed by machining with a lathe or the like in the final process. At this time, contaminants generated from the grinding tool adhere to the target surface, or the target surface is moved during the transportation of the target. It will oxidize. Before the film formation, it is necessary to sufficiently sputter the target surface to expose the clean target surface. In such a case, sputtering is performed with the shutter closed so that contaminated or oxidized target particles do not adhere to the substrate mounting surface of the substrate holder.
- the target material adhering to the back surface of the semiconductor substrate is diffused into the semiconductor substrate by the heat treatment process, or the device characteristics are deteriorated.
- problems such as contamination of substrate processing apparatuses in subsequent processes after being brought in after the process.
- contamination to other devices using the back surface of the substrate as a medium has a large influence even if the amount of target material attached to the back surface of the substrate is very small, for example, about 1 ⁇ 10 11 atms / cm 2 , it is strictly controlled. Is required.
- the above problem occurs because there is a gap around the shutter even when the shutter is closed, and a very small amount of sputtered particles pass through the gap. That is, sputtered particles adhere to the substrate installation surface of the substrate holder during conditioning and target cleaning, which not only adheres to the back surface of the substrate and contaminates the substrate, but is transported to the next process, so other manufacturing equipment This is due to contamination.
- Patent Document 1 As a technique for avoiding the problem of sputtered particle wrapping at the time of target cleaning or pre-sputtering, for example, in Patent Document 1, a cylindrical cathode cover is installed around the target, and the shutter is connected to the end of the cathode cover. And a technique provided with a minimum gap is disclosed.
- Patent Document 2 and Patent Document 3 disclose apparatuses having two shutters between a substrate and a target or between a substrate and a vapor deposition source.
- Patent Documents 2 and 3 there is an advantage that film formation can be started in a stable state and generation of particles can be suppressed. However, it did not solve the problem of spattering particles.
- the present invention provides a method for manufacturing a semiconductor device, in which a sputtering particle is discharged from a substrate holder when a discharge for conditioning and target cleaning is performed in an apparatus for depositing a thin film on a substrate by sputtering.
- An electronic device manufacturing method that prevents adhesion to the mounting surface, and thus suppresses substrate contamination and contamination of other manufacturing equipment, and further maintains electrons that maintain stable film quality and suppress particle generation.
- An object of the present invention is to provide a device manufacturing method.
- a method for manufacturing an electronic device includes a target holder that is provided in a vacuum vessel and holds a target for forming a film on a substrate, A substrate holder for mounting the substrate; A first shielding member that is disposed in the vicinity of the substrate holder and is in a closed state that shields between the substrate holder and the target holder, or an open state that opens between the substrate holder and the target holder.
- First opening / closing drive means for opening / closing the first shielding member in the open state or in the closed state;
- a second shielding member having a ring shape, which is installed on the surface of the substrate holder and on the outer periphery of the substrate;
- Driving means for moving the substrate holder to move the substrate holder on which the second shielding member is installed to approach or move away from the closed first shielding member;
- the first shielding member is formed with a first protrusion having at least one ring shape extending in the direction of the second shielding member,
- a method of manufacturing an electronic device using a sputtering apparatus wherein the second shielding member is formed with a second protrusion having at least one ring shape extending in the direction of the first shielding member.
- the manufacturing method of the electronic device concerning this invention is provided in a vacuum vessel,
- First opening / closing drive means for opening / closing the first shielding member in the open state or in the closed state;
- a second shielding member having a ring shape, which is installed on the surface of the substrate holder and on the outer periphery of the substrate;
- Drive for moving the first shielding member in order to move the first shielding member in the closed state closer to or away from the substrate holder on which the second shielding member is installed.
- the first shielding member is formed with a first protrusion having at least one ring shape extending in the direction of the second shielding member, A method of manufacturing an electronic device using a sputtering apparatus, wherein the second shielding member is formed with a second protrusion having at least one ring shape extending in the direction of the first shielding member.
- a sputtering method is provided in a vacuum vessel, and a target holder for holding a target for film formation on a substrate, A substrate holder for mounting the substrate; A first shielding member that is disposed in the vicinity of the substrate holder and is in a closed state that shields between the substrate holder and the target holder, or an open state that opens between the substrate holder and the target holder.
- First opening / closing drive means for opening / closing the first shielding member in the open state or in the closed state;
- a second shielding member having a ring shape, which is installed on the surface of the substrate holder and on the outer periphery of the substrate;
- Driving means for moving the substrate holder to move the substrate holder on which the second shielding member is installed to approach or move away from the closed first shielding member;
- the first shielding member is formed with a first protrusion having at least one ring shape extending in the direction of the second shielding member,
- a sputtering method using a sputtering apparatus wherein the second shielding member is formed with a second protrusion having at least one ring shape extending in the direction of the first shielding member,
- a sputtering method is provided in a vacuum vessel, and a target holder for holding a target for film formation on a substrate, A substrate holder for mounting the substrate; A first shielding member that is disposed in the vicinity of the substrate holder and is in a closed state that shields between the substrate holder and the target holder, or an open state that opens between the substrate holder and the target holder.
- First opening / closing drive means for opening / closing the first shielding member in the open state or in the closed state;
- a second shielding member having a ring shape, which is installed on the surface of the substrate holder and on the outer periphery of the substrate;
- Drive for moving the first shielding member in order to move the first shielding member in the closed state closer to or away from the substrate holder on which the second shielding member is installed.
- the first shielding member is formed with a first protrusion having at least one ring shape extending in the direction of the second shielding member, A sputtering method using a sputtering apparatus, wherein the second shielding member is formed with a second protrusion having at least one ring shape extending in the direction of the first shielding member, A first step of positioning the first shielding member by the driving means such that the first protrusion and the second protrusion are fitted in a non-contact state; After the first step, the second step of sputtering the target while maintaining the position where the first protrusion and the second protrusion are fitted in a non-contact state. And
- the present invention in the manufacture of an electronic device, when performing discharge for conditioning and target cleaning in an apparatus for depositing a thin film on a substrate by sputtering, the sputtered particles adhere to the substrate mounting surface of the substrate holder. Therefore, it is possible to provide an electronic device manufacturing method and a sputtering method in which substrate contamination and contamination of other manufacturing apparatuses do not occur.
- FIG. 3 is a diagram showing an outline of a substrate shutter 19 facing the substrate peripheral cover ring 21.
- FIG. 3 is a diagram showing an outline of a substrate peripheral cover ring 21 facing a substrate shutter 19. It is a figure explaining the positional relationship of the board
- FIG. 3 is a diagram showing an outline of a substrate shutter 19 facing the substrate peripheral cover ring 21.
- FIG. It is a figure explaining the positional relationship of the board
- FIG. It is a figure explaining the positional relationship of the board
- FIG. It is a figure explaining the operation
- FIG. 1A is a schematic diagram of a film forming apparatus 1 according to an embodiment of the present invention.
- the film forming apparatus 1 introduces an inert gas into the vacuum container 2, a vacuum exhaust apparatus having a vacuum container 2, a turbo molecular pump 48 that exhausts the inside of the vacuum container 2 through the exhaust port 8, and a dry pump 49.
- An inert gas introduction system 15 capable of introducing a reactive gas
- a reactive gas introduction system 17 capable of introducing a reactive gas.
- the exhaust port 8 is a conduit having a rectangular cross section, for example, and connects the vacuum vessel 2 and the turbo molecular pump 48.
- a main valve 47 is provided between the exhaust port 8 and the turbo molecular pump 48 to shut off the film forming apparatus 1 and the turbo molecular pump 48 when maintenance is performed.
- the inert gas introduction system 15 is connected to an inert gas supply device (gas cylinder) 16 for supplying an inert gas.
- the inert gas introduction system 15 includes piping for introducing an inert gas, a mass flow controller for controlling the flow rate of the inert gas, valves for shutting off and starting the gas supply, and A pressure reducing valve, a filter, and the like are configured as necessary, and a gas flow rate designated by a control device (not shown) can be stably flowed.
- the inert gas is supplied from the inert gas supply device 16 and the flow rate of the inert gas is controlled by the inert gas introduction system 15 and then introduced into the vicinity of the target 4 described later.
- a reactive gas supply device 18 for supplying a reactive gas is connected to the reactive gas introduction system 17.
- the reactive gas introduction system 17 includes piping for introducing reactive gas, a mass flow controller for controlling the flow rate of the inert gas, valves for shutting off and starting the gas flow, and A pressure reducing valve, a filter, and the like are configured as necessary, and a gas flow rate designated by a control device (not shown) can be flowed stably.
- the reactive gas is supplied from the reactive gas supply device 18 and the flow rate of the reactive gas is controlled by the reactive gas introduction system 17 and then introduced into the vicinity of a substrate holder 7 that holds the substrate 10 described later.
- the inert gas and the reactive gas are introduced into the vacuum vessel 2 and then sputtered particles are generated or used to form a film as will be described later.
- the air is exhausted by the pump 48 and the dry pump 49.
- the target 4 with the exposed surface to be sputtered is held by the back plate 5, and the substrate 10 is held at a predetermined position where the sputtered particles emitted from the target 4 reach.
- a substrate holder 7 is provided.
- the vacuum vessel 2 is provided with a pressure gauge 41 for measuring the pressure in the vacuum vessel 2.
- the inner surface of the vacuum vessel 2 is electrically grounded.
- a cylindrical shield 40 that is electrically grounded is provided on the inner surface of the vacuum vessel 2 between the target holder 6 and the substrate holder 7. The shield 40 prevents the sputtered particles from directly adhering to the inner surface of the vacuum vessel 2 and has a replaceable structure.
- a magnet 13 for realizing magnetron sputtering is disposed behind the target 4 as viewed from the sputtering surface.
- the magnet 13 is held by the magnet holder 3 and can be rotated by a magnet holder rotation mechanism (not shown). In order to make the erosion of the target uniform, the magnet holder 3 rotates during discharge.
- the target 4 is installed at a position (offset position) obliquely above the substrate 10. That is, the center point of the sputtering surface of the target 4 is at a position that is shifted by a predetermined dimension with respect to the normal line of the center point of the substrate 10.
- the target holder 6 is connected to a power supply 12 for applying sputtering discharge power.
- the film forming apparatus 1 shown in FIG. 1A includes a DC power source, but is not limited thereto, and may include, for example, an RF power source. When the RF power source is used, a matching unit is installed between the power source 12 and the target holder 6.
- the target holder 6 is insulated from the vacuum vessel 2 by an insulator 34, and is made of a metal such as Cu, so that it becomes an electrode when DC or RF power is applied.
- the target holder 6 has a water channel (not shown) inside, and is configured to be cooled by cooling water supplied from a water pipe (not shown).
- the target 4 is composed of material components that are desired to be deposited on the substrate. Since it relates to the purity of the film, a high purity is desirable.
- the back plate 5 installed between the target 4 and the target holder 6 is made of a metal such as Cu and holds the target 4. Alternatively, the target 4 may be directly fixed to the target holder 6 without using the back plate 5. In this case, there is a problem that the shape of the target is complicated. On the other hand, there is no need to bond the back plate and the target.
- a target shutter 14 is installed so as to cover the target holder 6.
- the target shutter 14 is a shielding member (third shielding member) for closing the space between the substrate holder 7 and the target holder 6 or opening the space between the substrate holder 7 and the target holder 6. Function as.
- the target shutter 14 is provided with a target shutter drive mechanism 33.
- a second shielding member having a ring shape (hereinafter also referred to as “substrate peripheral cover ring 21”) is provided on the substrate installation surface side of the substrate holder 7 and on the outer edge side (outer peripheral portion) of the substrate 10. .
- the substrate peripheral cover ring 21 prevents the sputtered particles from adhering to a place other than the film formation surface of the substrate 10.
- the place other than the film formation surface includes the side surface and the back surface of the substrate 10 in addition to the portion of the substrate holder 7 covered by the substrate peripheral cover ring 21.
- the substrate holder 7 is provided with a substrate holder drive mechanism 31 for moving the substrate holder 7 up and down or rotating at a predetermined speed.
- the substrate holder drive mechanism 31 raises the substrate holder 7 toward the closed substrate shutter 19 (first shielding member) or lowers the substrate holder 19 with respect to the substrate shutter 19 (first shielding member).
- the substrate holder 7 can be moved up and down.
- a substrate shutter 19 is disposed between the substrate holder 7 and the target holder 6 in the vicinity of the substrate 10.
- the substrate shutter 19 is supported by the substrate shutter support member 20 so as to cover the surface of the substrate 10.
- the substrate shutter drive mechanism 32 rotates the substrate shutter support member 20 to insert the substrate shutter 19 between the target 4 and the substrate 10 (closed state). At this time, the space between the target 4 and the substrate 10 is shielded.
- the substrate shutter 19 is retracted from between the target holder 6 (target 4) and the substrate holder 7 (substrate 10) by the operation of the substrate shutter drive mechanism 32, the target holder 6 (target 4) and the substrate holder 7 ( The substrate 10) is opened (open state).
- the substrate shutter drive mechanism 32 is configured so as to close the substrate shutter 7 and the target holder 6 or to open the space between the substrate holder 7 and the target holder 6. 19 is opened and closed.
- the substrate shutter 19 is configured to be retractable into the exhaust port 8. As shown in FIG. 1A, if the retreat location of the substrate shutter 19 is accommodated in the conduit of the exhaust path to the turbo molecular pump 48 for high vacuum exhaust, it is preferable that the apparatus area can be reduced.
- the substrate shutter 19 is made of stainless steel or aluminum alloy. Moreover, when heat resistance is calculated
- FIG. 3 is a diagram showing an outline of the substrate peripheral cover ring 21 facing the substrate shutter 19.
- the substrate peripheral cover ring 21 is formed with a protrusion having a ring shape extending in the direction of the substrate shutter 19.
- the substrate peripheral cover ring 21 has a ring shape, and concentric protrusions (protrusions 21 a and 21 b) are provided on the surface of the substrate peripheral cover ring 21 that faces the substrate shutter 19.
- FIG. 2 is a diagram showing an outline of the substrate shutter 19 facing the substrate peripheral cover ring 21.
- the substrate shutter 19 is formed with a protrusion having a ring shape extending in the direction of the substrate peripheral cover ring 21.
- a protrusion (protrusion 19 a) is provided on the surface of the substrate shutter 19 facing the substrate peripheral cover ring 21. Note that the circumference of the protrusion 21a, the protrusion 19a, and the protrusion 21b is formed larger in this order.
- the projection 19a and the projections 21a and 21b are fitted in a non-contact state at a position where the substrate holder is raised by the substrate holder driving mechanism 31.
- the protrusion 19a and the protrusions 21a and 21b are fitted in a non-contact state.
- the other protrusion 19a fits in the recess formed by the plurality of protrusions 21a and 21b in a non-contact state.
- FIG. 1B is a block diagram of the main controller 100 for operating the film forming apparatus 1 shown in FIG. 1A.
- the main control unit 100 includes a power supply 12 for applying sputtering discharge power, an inert gas introduction system 15, a reactive gas introduction system 17, a substrate holder drive mechanism 31, a substrate shutter drive mechanism 32, a target shutter drive mechanism 33, and a pressure gauge 41. , And a gate valve, respectively, and configured to manage and control the operation of a film forming apparatus to be described later.
- the storage device 63 provided in the main control unit 100 stores a control program for executing the conditioning according to the present invention, a method for forming a film on a substrate with pre-sputtering, and the like.
- the control program is implemented as a mask ROM.
- the control program can be installed in a storage device 63 configured by a hard disk drive (HDD) or the like via an external recording medium or a network.
- HDD hard disk drive
- the labyrinth seal referred to here is a kind of non-contact seal, in which the respective protrusions (the recesses formed by 21a and 21b and the protrusions formed by 19a) formed on the opposing surfaces are fitted. It is in a non-contact state, that is, a certain gap is formed between the concave and convex portions.
- the sputtered particles ejected from the target have a property of traveling straight in the sputter chamber, they cannot pass through the gap between the convex portion and the concave portion. Therefore, it is possible to prevent the sputtered particles from adhering to the surface of the substrate holder 7 or the like.
- FIG. 4B shows a state where the minimum distance that the substrate shutter 19 and the substrate peripheral cover ring 21 do not come into contact with each other when the substrate shutter 19 is opened and closed (hereinafter referred to as “position B”) is shown. At the position B, the relationship of D1> H1 + H2 is satisfied.
- FIG. 4C shows a state where the distance between the substrate shutter 19 and the substrate holder 7 is maximized (hereinafter referred to as “position C”).
- position C the distance between the substrate shutter 19 and the substrate holder 7 is maximized
- the substrate can be transported to the substrate placement surface of the substrate holder 7 from the gap formed between the substrate shutter 19 in the state C and the substrate peripheral cover ring 21.
- the position of the substrate peripheral cover ring 21 is moved by moving the substrate holder 7 up and down to adjust the distance between the substrate shutter 19 and the substrate peripheral cover ring 21.
- the substrate shutter drive mechanism 32 may be configured to move the substrate shutter 19 up and down.
- the substrate shutter drive mechanism 32 lowers the closed substrate shutter 19 (first shielding member) toward the substrate holder 7 on which the substrate peripheral covering 21 (second shielding member) is installed, or In order to raise the substrate holder 7, the substrate shutter 19 (first shielding member) can be moved up and down.
- the substrate shutter drive mechanism 32 and the substrate holder drive mechanism 31 can move the substrate shutter 19 and the substrate holder 7 in the vertical direction to the position C.
- the substrate shutter support member 20 opens and closes the substrate shutter 19 by a rotating operation.
- a horizontal introduction mechanism or the like can be used. It is also possible to slide the substrate shutter 19 in the direction.
- the conditioning treatment means that discharge is performed to stabilize the film formation characteristics with the substrate shutter 19 closed so that the film formation on the substrate is not affected, and the sputtered particles adhere to the inner wall of the chamber. This is the processing to be performed.
- the main control unit 100 instructs the substrate shutter drive mechanism 32 to close the substrate shutter 19.
- the main control unit 100 instructs the target shutter drive mechanism 33 to close the target shutter 14.
- the target shutter 14 and the substrate shutter 19 are closed.
- the substrate holder 7 is placed at a position C which is a standby position.
- the main control unit 100 instructs the substrate holder drive mechanism 31 to perform the ascending operation, so that the substrate holder 7 is positioned at the position where the labyrinth seal is formed from the position C (FIG. 4C) which is the standby position (FIG. 4C). It moves upward to position A (FIG. 4A)) (FIG. 5A).
- the main control unit 100 closes the target shutter 14 with the inert gas (Ne, Kr, Xe in addition to Ar) from the inert gas introduction system 15 near the target.
- a control device that controls the inert gas introduction system 15 is instructed to introduce it.
- FIG. 5B by introducing an inert gas in the vicinity of the target, the pressure in the vicinity of the target becomes higher than that in the vicinity of the substrate, so that discharge is easily performed. In this state, electric power is applied from the power source 12 to the target to start discharging.
- a labyrinth seal is formed between the substrate shutter 19 and the substrate peripheral cover ring 21, it is possible to prevent sputter particles from adhering to the substrate mounting surface of the substrate holder 7.
- the main control unit 100 drives the target shutter drive mechanism 33 to instruct to open the target shutter 14.
- the conditioning to the inner wall of the chamber is started.
- the sputtered particles that have jumped out of the target 4 adhere to the inner wall of the chamber and deposit a film.
- the shield 40 is provided on the inner wall, sputtered particles adhere to the surface of the shield 40 and a film is deposited.
- a labyrinth seal is formed between the substrate shutter 19 and the substrate peripheral cover ring 21, it is possible to prevent sputter particles from entering the substrate placement surface of the substrate holder 7.
- conditioning is performed by forming a film on the inner wall of the chamber or a constituent member such as a shield.
- the main control unit 100 stops the discharge by stopping the application of power to the power supply 12 (FIG. 5D). At this time, the deposited film 51 is deposited on the shield 40, the target shutter 14, the substrate shutter 19, and other surfaces facing the target.
- the main control unit 100 instructs the control device that controls the inert gas introduction system 15 to stop the supply of the inert gas.
- the main control unit 100 instructs the reactive gas introduction system 17 to stop the supply of the reactive gas when the reactive gas is being supplied. Thereafter, the main control unit 100 instructs the target shutter drive mechanism 33 to close the target shutter 14.
- the main controller 100 instructs the substrate holder drive mechanism 31 to move the substrate holder 7 from the position A to the position C, and the conditioning is completed.
- the operation at the time of target cleaning for removing impurities and oxides attached to the target before film formation can be realized by the same procedure as the operation at the time of conditioning described above.
- pre-sputtering refers to sputtering performed to stabilize the discharge with the shutter closed so as not to affect film formation on the substrate. Pre-sputtering is performed.
- the main control unit 100 instructs the substrate shutter drive mechanism 32 to close the substrate shutter 19 (to put it in the position A state).
- the main control unit 100 instructs the target shutter drive mechanism 33 to close the target shutter 14.
- the target shutter 14 and the substrate shutter 19 are closed (FIG. 6A).
- the substrate holder 7 is placed at a position C which is a standby position.
- the main control unit 100 opens the gate valve 42 on the chamber wall, and carries the substrate 10 from the gate valve 42 by substrate transfer means (not shown) outside the chamber. Instruct. Then, the substrate 10 is carried in between the substrate shutter 19 and the substrate peripheral cover ring 21, and the substrate placement of the substrate holder 7 is performed in cooperation with the substrate transfer means outside the chamber and the lift mechanism (not shown) in the substrate holder. The substrate 10 is placed on the surface.
- the main control unit 100 closes the gate valve 42 as shown in FIG. 6C, and moves the substrate holder 7 from the position C (FIG. 4C) to the position B (FIG. 4B) by the substrate holder drive mechanism 31.
- the position B is preferably a point where the positional relationship between the target 4 and the substrate 10 is optimal from the viewpoint of film formation distribution and the like.
- the main controller 100 rotates the substrate holder 7 by driving the substrate holder driving mechanism 31.
- An inert gas (Ne, Kr, Xe in addition to Ar) is introduced from an inert gas introduction system 15 provided near the target.
- the main control unit 100 starts discharging by applying power from the power source 12 to the target.
- the substrate shutter 19 closed, it is possible to prevent sputtered particles from adhering to the substrate.
- the main control unit 100 After a discharge stabilization time of a predetermined time (3 to 15 seconds) for stabilizing the discharge, the main control unit 100 opens the target shutter 14 and starts pre-sputtering as shown in FIG. 6E. If an abnormality such as the discharge not starting occurs at this time, the main control unit 100 can detect the abnormality by monitoring the discharge voltage current and stop the film forming sequence. When there is no problem, the target shutter 14 is opened as described above, so that the sputtered particles adhere to the inner wall of the shield and deposit a film. In addition, when performing deposition by reactive sputtering, a reactive gas is introduced from the reactive gas introduction system 17. Sputtered particles adhere to the shield surface of the inner wall shield 40 to deposit a film.
- the labyrinth seal is not formed at position B of the substrate holder during pre-sputtering.
- the operation of retracting the substrate holder is not necessary when the subsequent opening operation of the substrate shutter 19 is performed, the opening operation of the shutter can be performed quickly.
- the substrate 10 is already placed on the substrate placement surface of the substrate holder 7, the sputter particles that slightly go around do not cause a problem in many cases.
- setting the substrate shutter 19 to position A during pre-sputtering prevents spatter of sputter particles during pre-sputtering, Further, a high quality film can be formed.
- the main control unit 100 After performing the pre-sputtering for a necessary time, the main control unit 100 opens the substrate shutter 19 by the substrate shutter drive mechanism 32 and starts film formation on the substrate 10 as shown in FIG. 6F.
- the main control unit 100 After discharging for a predetermined time, as shown in FIG. 6G, the main control unit 100 stops the discharge and stops the supply of the inert gas by stopping the application of power. Further, the main control unit 100 stops the supply of the reactive gas when the reactive gas is being supplied. The main control unit 100 closes the substrate shutter 19 and the target shutter 14. As shown in FIG. 6H, the main control unit 100 moves the substrate holder 7 from the position B to the position C.
- the gate valve 42 of the chamber is opened, the substrate is unloaded in the reverse order of loading, and the pre-sputtering and the film forming process on the substrate are completed.
- a sputtering apparatus that prevents sputtered particles from adhering to the substrate mounting surface of the substrate holder when performing discharge for conditioning, pre-sputtering, and target cleaning. Is possible.
- Modification 1 A modified example of the labyrinth seal formed by the substrate shutter 19 and the substrate peripheral cover ring 21 will be described with reference to FIGS. 7A to 7G.
- FIG. 7A is an enlarged schematic view of the labyrinth seal formed by the substrate shutter 19 and the substrate peripheral cover ring 21 in the apparatus shown in FIG. 1A.
- the labyrinth seal can be formed between the substrate peripheral cover ring 21 and the substrate shutter 19 by the substrate shutter protrusion 19a provided opposite to the position between the substrate peripheral cover ring protrusions 21a and 21b. it can.
- the substrate peripheral cover ring 21 has two protrusions (21a, 21b)
- the bending of the seal space formed in the labyrinth shutter between the protrusion 19a of the substrate shutter 19 and the protrusions 21a, 21b is a broken line region 71. There are four places indicated by ⁇ 74.
- the interval in the vertical direction of the labyrinth seal (for example, D2 in FIG. 7A) can be changed by controlling the vertical movement of the substrate holder 7.
- the vertical movement of the substrate holder 7 is controlled by the main control unit 100 so that the substrate peripheral cover ring 21 and the substrate shutter 19 do not contact each other.
- spatter particles do not wrap around the substrate mounting location of the substrate holder 7, but particles are generated at the contact portion between the substrate peripheral cover ring 21 and the substrate shutter 19. It is not preferable. This is because the particles deteriorate the film quality of film formation on the processing substrate that is subsequently transported and processed, thereby deteriorating the device yield and characteristics.
- the main control unit 100 When the substrate shutter 19 is opened and closed, the main control unit 100 operates the substrate holder driving mechanism 31 so that the protrusions (21a, 21b) of the substrate peripheral cover ring 21 do not contact the protrusions (19a) of the substrate shutter 19.
- the substrate holder 7 is lowered to a position (position B or position C).
- the control performed by the main control unit 100 so that the protrusions of the substrate shutter 19 and the protrusions of the substrate peripheral cover ring 21 do not collide (contact) is the same in the modified labyrinth seal described below.
- the labyrinth seal is formed by a combination of protrusions and protrusions or grooves provided on the substrate shutter 19 and the substrate peripheral cover ring 21. At least one of the substrate shutter 19 and the substrate peripheral cover ring 21 needs to be movable up and down. In the present embodiment, the position of the substrate peripheral cover ring 21 can be moved in the vertical direction by driving the substrate holder 7 in the vertical direction.
- the number of protrusions on the substrate shutter 19 and the substrate peripheral cover ring 21 must be at least one each. Preferably, the number of either projection is two or more from the viewpoint of preventing the sputtered particles from entering.
- FIG. 7A corresponding to FIG. 1A illustrates a case where there is one protrusion of the substrate shutter 19 and two protrusions of the substrate peripheral cover ring 21.
- FIG. 7B illustrates a case where there is one protrusion on each of the substrate shutter 19 and the substrate peripheral cover ring 21.
- the substrate peripheral cover ring 21 has one protrusion (21a)
- the bending of the seal space formed in the labyrinth shutter between the protrusion 19a of the substrate shutter 19 and the protrusion 21a is indicated by broken line areas 75 and 76. It will be two places.
- FIG. 7C illustrates a case where the substrate shutter 19 has two protrusions (19a, 19b) and the substrate peripheral cover ring 21 has one protrusion (21a).
- FIG. 7D illustrates a case where the substrate shutter 19 has two protrusions (19a, 19b) and the substrate peripheral cover ring 21 has two protrusions (21a, 21b).
- the height of the protrusions may be different as shown in FIG. 7E.
- the height H1 or H2 of the protrusion may be longer than the distance D1 of the flat surface between the substrate shutter 19 and the substrate peripheral cover ring 21.
- FIG. 7E is an example in which H1 is larger than the distance D1.
- FIG. 7E shows an example in which the projections provided on the substrate shutter 19 have different heights.
- the present invention is not limited to this example, and the substrate peripheral cover ring 21 may have a different projection height. Is possible.
- corners of the projections of the substrate shutter 19 and the substrate peripheral cover ring 21 and the bases thereof may not be all right angles, and may be round, for example, for ease of processing and maintenance.
- a groove dug in the substrate shutter 19 or the substrate peripheral cover ring 21 is provided on either the substrate shutter 19 or the substrate peripheral cover ring 21, and a protrusion is provided on the other to form a labyrinth seal relative to each other.
- the substrate peripheral cover ring 21 has a function as a mask member (shadow ring) that prevents film formation on a portion other than the film formation surface of the substrate (end portion (outer peripheral portion) of the substrate) during film formation. Also good.
- the substrate peripheral cover ring 21 has a region overlapping with the end portion of the substrate. In order to mechanically fix the substrate, the overlap portion may be in contact with the substrate. Alternatively, when mechanical fixing is not required, the substrate peripheral cover ring 21 may be configured not to contact the substrate 10.
- Modification 2 In the above-described embodiment, an example in which a single target is used has been described. However, a sputtering apparatus for a plurality of targets as shown in FIG. 8 may be used. In this case, it is necessary to provide a plurality of target shutters 14 for each target in order to prevent one target from being contaminated by adhesion of sputtered particles from the other target. By doing so, it is possible to operate so as to prevent contamination between targets.
- Example 1 A description will be given of a case where the present invention is applied to prevent TiN peeling from the chamber wall by periodically forming Ti on the chamber wall during TiN film formation.
- the apparatus uses the apparatus (FIG. 1A) described in the above embodiment.
- the target 4 uses Ti.
- the protrusions of the substrate shutter 19 and the substrate peripheral cover ring 21 are those shown in FIG. 7A. In the state of FIG. 7A used in this embodiment, the number of protrusions of the substrate shutter 19 is one, and the number of protrusions of the substrate peripheral cover ring 21 is two.
- pre-sputtering before TiN film formation is performed for 1200 seconds under the TiN film formation conditions described later, and then a layer of SiO 2 (1.5 nm) / HfSiO (1.5 nm) is deposited on a 300 mm diameter Si substrate.
- the wafer on which the film was formed was transferred to the film forming chamber 1 and placed on the substrate holder 7 to form a TiN film having a thickness of 7 nm.
- the TiN film formation conditions at that time are as follows.
- sccm As an inert gas, 20 sccm of Ar gas (sccm: an abbreviation of standard cc per minute, a unit of gas flow rate supplied per minute converted to cm 3 units of 0 ° C. and 1 atm which is a standard state), N 2 gas 20 sccm, pressure 0.04 Pa, power 700 W, time 240 seconds.
- sccm an abbreviation of standard cc per minute, a unit of gas flow rate supplied per minute converted to cm 3 units of 0 ° C. and 1 atm which is a standard state
- N 2 gas 20 sccm As an inert gas, 20 sccm of Ar gas (sccm: an abbreviation of standard cc per minute, a unit of gas flow rate supplied per minute converted to cm 3 units of 0 ° C. and 1 atm which is a standard state), N 2 gas 20 sccm, pressure 0.04 Pa, power 700 W, time 240 seconds.
- the wafer was unloaded, and 300 films were formed in the same manner. The wafer was unloaded and the process was completed.
- the conditioning process was performed.
- the height H1 of the projection of the substrate shutter 19 is one 10 mm
- the height H2 of the substrate peripheral cover ring 21 is two 10 mm.
- the height of the substrate shutter 19 and the substrate peripheral cover ring 21 is The distance D between the flat portions excluding the protrusions was 15 mm.
- the substrate holder 7 is arranged so as to be in the state of the position A shown in FIG. 4A described above, Ar gas is 50 sccm, pressure is 0.04 Pa, discharge is started at a power of 1000 W, the target shutter 14 is opened, and the substrate shutter 19 is opened. With the closed, a conditioning discharge was performed for 2400 seconds.
- the substrate is not placed on the substrate holder 7 during conditioning.
- a 300 mm Si bare substrate was placed on the substrate placement surface of the substrate holder 7 for discharge.
- the 300 mm Si bare substrate placed on the substrate holder 7 is taken out, and the substrate is subjected to a total reflection X-ray fluorescence analyzer TXRF: total-reflection X-ray fluorescence (TREX630IIIx manufactured by Technos Co., Ltd.). Analysis of a portion 26 to 34 mm from the end revealed that the amount of Ti detected was below the detection limit.
- TXRF total reflection X-ray fluorescence analyzer
- Example 2 In order to investigate the effect when the shape of the labyrinth path of the labyrinth seal is different from that in the first embodiment, the substrate peripheral cover ring 21 having a different number of protrusions as shown in FIG. The experiment was conducted.
- the substrate peripheral cover ring 21 (FIG. 7B) used in this example has one protrusion on the substrate shutter 19 and one protrusion on the substrate peripheral cover ring 21.
- the amount of Ti detected was 2 ⁇ 10 10 atms / cm 2 .
- the thickness of the Ti film of 5 nm is approximately 3 ⁇ 10 16 atms / cm 2 when calculated with a Ti density of 4.5. Therefore, it was confirmed that the number of sputtered particles traveling around the substrate mounting surface was much larger in the case of this comparative example having no labyrinth seal than in Examples 1 and 2 having the labyrinth seal.
- Example 1 and 2 with a labyrinth seal the amount of Ti was significantly smaller than in the comparative example without a labyrinth seal. Further, when there are two protrusions of the substrate peripheral cover ring 21 of the first embodiment (four seal space bends), the case of the second embodiment has only one protrusion (two seal space bends). Also, the amount of Ti detected was small. When there are two protrusions on one side, that is, when there are four bends in the space of the labyrinth seal, the wrap around the atomic number level is more remarkable than when there is only one protrusion, ie, only two bends in the space of the labyrinth seal. The effect which prevents was acquired. 7C, FIG. 7D, FIG.
- the labyrinth seal has four or more bends. That is, when the number of bends in the space of the labyrinth seal is four or more, it is estimated that the same effect as or more than that of the first embodiment can be obtained.
- FIG. 9 shows a schematic configuration of a laminated film forming apparatus for flash memory (hereinafter also simply referred to as “laminated film forming apparatus”), which is an example of a vacuum thin film forming apparatus including the film forming apparatus 1 according to the embodiment of the present invention.
- the laminated film forming apparatus shown in FIG. 9 includes a vacuum transfer chamber 910 having a vacuum transfer robot 912 therein.
- the vacuum transfer chamber 910 includes a load lock chamber 911, a substrate heating chamber 913, a first PVD (sputtering) chamber 914, a second PVD (sputtering) chamber 915, and a substrate cooling chamber 917 via gate valves 920, respectively. It is connected.
- the substrate to be processed (silicon wafer) is set in the load lock chamber 911 for carrying the substrate in and out of the vacuum transfer chamber 910, and the substrate is evacuated until the pressure reaches 1 ⁇ 10 ⁇ 4 Pa or less. Thereafter, using the vacuum transfer robot 912, the substrate to be processed is carried into the vacuum transfer chamber 910 in which the degree of vacuum is maintained at 1 ⁇ 10 ⁇ 6 Pa or less, and further transferred to a desired vacuum processing chamber.
- the substrate to be processed is first transported to the substrate heating chamber 913 and heated to 400 ° C., and then transported to the first PVD (sputtering) chamber 914 and Al 2 O 3 is deposited on the substrate to be processed. A thin film is formed to a thickness of 15 nm.
- the substrate to be processed is transferred to the second PVD (sputtering) chamber 915, and a TiN film is formed thereon to a thickness of 20 nm.
- the substrate to be processed is transferred into the substrate cooling chamber 917, and the substrate to be processed is cooled to room temperature. After all the processes are completed, the substrate to be processed is returned to the load lock chamber 911, and after introducing dry nitrogen gas to atmospheric pressure, the substrate to be processed is taken out from the load lock chamber 911.
- the degree of vacuum in the vacuum processing chamber is set to 1 ⁇ 10 ⁇ 6 Pa or less.
- a magnetron sputtering method is used for forming the Al 2 O 3 film and the TiN film.
- FIG. 10 is a diagram illustrating a processing flow of an electronic device product related to an electronic device manufacturing method using the film forming apparatus 1 according to the embodiment of the invention.
- Ti is used as the target 4 mounted on the film forming apparatus 1
- argon is used as an inert gas
- nitrogen is used as a reactive gas
- step S1 after replacing the target and the shield, the vacuum vessel 2 is evacuated and controlled to a predetermined pressure.
- target cleaning refers to sputtering performed to remove impurities and oxides attached to the surface of the target.
- the target cleaning is performed by setting the height of the substrate holder so that the substrate shutter 19 and the substrate peripheral cover ring 21 form a labyrinth seal. By setting in this way, it is possible to prevent sputter particles from adhering to the substrate mounting surface of the substrate holder. Note that the target cleaning may be performed with the substrate placed on the substrate holder.
- step S3 the main control unit 100 starts a film forming operation in accordance with a film formation start instruction input to the main control unit 100 from an input device (not shown).
- conditioning in step S4 is performed.
- Conditioning is a process in which discharge is performed to stabilize film formation characteristics, and a target is sputtered to adhere sputtered particles to the inner wall of the chamber.
- FIG. 11 is a diagram showing a procedure for performing conditioning using the sputter deposition apparatus 1. Specifically, step number, time in each process (set time), target shutter position (open, closed), substrate shutter position (open, closed), target applied power, Ar gas flow rate, and nitrogen gas flow rate, Is shown. These procedures are stored in the storage device 63 and are continuously executed by the main control unit 100.
- a gas spike is performed (S1101).
- the pressure in the chamber is increased, and a state in which discharge is easily started in the next plasma ignition step is created.
- the target shutter 14 and the substrate shutter 19 are closed, the nitrogen gas flow rate is not introduced, and the argon gas flow rate is 400 sccm.
- the argon gas flow rate is preferably 100 sccm or more in order to facilitate ignition in the next plasma ignition step.
- a plasma ignition process is performed (S1102). While maintaining the shutter position and gas conditions, 1000 W DC power is applied to the Ti target to generate plasma (plasma ignition). By using this gas condition, it is possible to prevent the generation failure of plasma that tends to occur at a low pressure.
- pre-sputtering (S1103) is performed.
- the gas condition is changed to 100 sccm of argon while maintaining the power applied to the target (target applied power). This procedure can maintain the discharge without losing the plasma.
- conditioning 1 (S1104) is performed.
- the target shutter 14 is opened while the target applied power, the gas flow rate condition, and the position of the substrate shutter 19 are kept closed.
- the shield inner wall can be covered with a low-stress film by adhering sputtered particles from the Ti target to the chamber inner wall including the shield inner wall. Therefore, it is possible to prevent the sputtered film from being peeled off from the shield, so that it is possible to prevent the peeled film from scattering into the chamber and falling onto the device, thereby deteriorating the characteristics of the product.
- a gas spike (S1105) is performed again.
- the application of power to the target is stopped, the argon gas flow rate is 200 sccm, and the nitrogen gas flow rate is 10 sccm.
- the argon gas flow rate is preferably a flow rate larger than the conditioning 2 step (S1108) described later (for example, 100 sccm or more) in order to facilitate ignition in the next plasma ignition step.
- the conditioning 2 step (S1108) described later since the nitride film is formed by the reactive sputtering method in which nitrogen gas is introduced, the introduction of nitrogen gas from the gas spike step also has an effect of preventing a rapid gas flow rate change. .
- Plasma ignition process is performed (S1106).
- Plasma is generated by applying DC power of 750 W to the Ti target while maintaining the shutter position and gas flow rate conditions (plasma ignition). By using this gas condition, it is possible to prevent the generation of plasma that tends to occur at a low pressure.
- pre-sputtering (S1107) is performed.
- the gas flow rate condition is changed to 10 sccm of argon and 10 sccm of nitrogen gas while maintaining the target applied power. This procedure can maintain the discharge without losing the plasma.
- conditioning 2 (S1108) is performed.
- the target shutter 14 is opened while the target applied power, the gas flow rate condition, and the position of the substrate shutter 19 are kept closed.
- nitrogen which is a reactive gas
- a nitride film is deposited on the inner wall of the chamber including the inner wall of the shield. Rapid changes in state can be suppressed.
- the film formation in the next substrate film formation process can be performed stably from the beginning, so that there is a great improvement effect on the improvement of manufacturing stability in the device manufacturing. .
- the time required for each of the above procedures is set to an optimum value.
- the first gas spike (S1101) is 0.1 seconds
- the plasma ignition (S1102) is 2 seconds
- the pre-sputtering (S1103) is 5 seconds.
- conditioning 1 (S1104) for 240 seconds
- second gas spike (S1105) for 5 seconds
- second plasma ignition (S1106) for 2 seconds
- second pre-sputtering for 5 seconds
- the second gas spike process (S1105), the subsequent plasma ignition process (S1106), and the pre-sputter process (S1107) can be omitted. If omitted, it is desirable in that the conditioning time can be shortened.
- the conditioning 2 step (S1108) in which nitrogen gas is added following the conditioning 1 step (S1104), which is an argon gas discharge, is performed, the properties of the plasma change greatly while continuing the discharge. Therefore, particles may increase due to the transient state.
- inserting these processes (S1105, S1106, S1107) including temporarily stopping the discharge and replacing the gas between the conditioning 1 process (S1104) and the conditioning 2 process (S1108). Since the rapid fluctuation of the plasma characteristics during conditioning can be further suppressed, the risk of generating particles can be reduced.
- Conditioning 2 (S1108) which is reactive sputtering, is substantially the same as the film forming conditions on the substrate described later.
- step S5 including a film forming process on the substrate is performed.
- the procedure for the film-forming process which comprises step S5 is demonstrated.
- a substrate is carried in (S501).
- the gate valve 42 is opened, the substrate 10 is loaded into the vacuum chamber 2 by a substrate transfer robot (not shown) and a lift mechanism (not shown), and the substrate placement surface on the substrate holder 7 is loaded. Placed on. The substrate holder 7 moves upward to the film forming position with the substrate placed thereon.
- a gas spike is performed (S502).
- the target shutter 14 and the substrate shutter 19 are closed, and argon gas, for example, 200 sccm and nitrogen gas, 10 sccm are introduced.
- argon gas for example, 200 sccm and nitrogen gas, 10 sccm are introduced.
- the amount of argon gas is larger than the amount of argon gas introduced in the film forming step (S506) to be described later from the viewpoint of ease of starting discharge.
- the time required for the gas spike step (S502) is, for example, about 0.1 seconds, as long as the pressure required in the next ignition step (S503) can be secured.
- plasma ignition is performed (S503).
- the target shutter 14 and the substrate shutter 19 remain closed, and the flow rates of argon gas and nitrogen gas remain the same as the conditions in the gas spike process (S502), and the target 4 A direct current (DC) power of 750 W is applied to generate discharge plasma in the vicinity of the sputtering surface of the target.
- the time required for the plasma ignition step (S503) may be as long as the plasma is ignited, for example, 2 seconds.
- pre-sputtering is performed (S504).
- the target shutter 14 and the substrate shutter 19 are kept closed, the flow rate of argon gas is reduced to, for example, 10 sccm, and the flow rate of nitrogen gas is set to 10 sccm.
- the direct current (DC) power to the target is, for example, 750 W, and the discharge is maintained.
- the time required for the pre-sputtering step (S504) may be a time required for preparation for the next short conditioning, for example, 5 seconds.
- short conditioning is performed (S505).
- the target shutter 14 is opened and opened.
- the substrate shutter 19 is kept closed, and the flow rate of argon gas is maintained at 10 sccm and the flow rate of nitrogen gas is maintained at 10 sccm.
- the direct current (DC) power to the target is, for example, 750 W, and the discharge is maintained.
- a titanium nitride film is formed on the inner wall of the shield and the like, and it is effective in forming a film in a stable atmosphere in the film formation step (S506) on the next substrate.
- the time required for the short conditioning step (S505) is shorter than the previous conditioning 1 (S1104) and conditioning 2 (S1108) because the atmosphere is adjusted by the previous conditioning (S4). For example, It may be about 5-30 seconds.
- the conditions of argon gas, nitrogen gas, and DC power are maintained the same as the conditions of the short conditioning step (S505) to maintain the discharge, and the substrate shutter 19 is maintained while the target shutter 14 is kept open.
- the film is opened and film formation on the substrate is started (S506). That is, the film forming conditions on the substrate 10 are an argon gas flow rate of 10 sccm, a nitrogen gas flow rate of 10 sccm, and a DC power applied to the target of 750 W.
- substrate unloading 507 is performed.
- the substrate holder 7 moves downward, the gate valve 42 is opened, and the substrate 10 is unloaded by a substrate transfer robot (not shown) and a lift mechanism (not shown).
- the main control unit 100 determines whether or not conditioning is necessary (S6).
- the conditioning necessity determination step (S6) the main control unit 100 determines the necessity of conditioning based on the determination conditions stored in the storage device 63. If it is determined that conditioning is necessary, the process returns to step S4, and conditioning is performed again (S4). On the other hand, if it is determined in step S6 that the conditioning is not necessary by the main control unit 100, the process proceeds to the next determination of S7.
- step S7 a determination is made based on whether or not an end signal is input to the main control unit 100, whether or not there is a processing substrate supplied to the apparatus, and if it is determined not to end (S7-NO), processing is performed.
- step S501 Is returned to step S501, and the process from the substrate loading (S501) to the substrate unloading (S507) through the film formation (S506) is performed again.
- the film forming process on the product substrate is continued for a predetermined number, for example, about several hundred films.
- conditioning necessity determination step (S6) After continuous processing, waiting time may occur for reasons such as product waiting time.
- the main control unit 100 determines that conditioning is necessary, and performs the conditioning in step S4 again.
- the upper surface of a high stress film such as TiN attached to the inner surface of the shield can be covered with a low stress film such as Ti.
- TiN continuously adheres to the shield the stress of the TiN film is high and the adhesion with the shield is weak, so that film peeling occurs and becomes particles.
- Ti sputtering is performed for the purpose of preventing film peeling.
- the Ti film has high adhesion to the shield and TiN film, and has an effect of preventing peeling of the TiN film (wall coating effect).
- the substrate shutter 19 and the substrate peripheral cover ring 21 form a labyrinth seal, and thus conditioning is performed without depositing a sputter film on the substrate installation surface of the substrate holder. I can do it. After this conditioning, the film forming process S5 (S501 to S507) is performed again.
- FIG. 12 is a diagram illustratively explaining a condition for starting conditioning (condition for determining whether conditioning is necessary).
- the judgment conditions for starting conditioning are the total number of processed substrates, the total number of processed lots, the total film thickness formed, the amount of power applied to the target, and the film formation on that shield after the shield replacement This is a change in the film forming conditions accompanying the change in the amount of power applied to the target, the standby time and the electronic device to be processed.
- Conditioning start timing can be after the processing of a lot (a bundle of substrates set for convenience in managing the manufacturing process, and usually 25 substrates are set as one lot).
- processing lots When there are a plurality of lots to be processed (processing lots), the total number of processing lots becomes the determination condition, and the processing start timing after the processing of all the lots can be set (conditioning start conditions 1, 3, 5, 7, 9, 11).
- the processing can be interrupted and used as the conditioning start timing (conditioning start conditions 2, 4). , 6, 8, 10, 12).
- the method (1201) of judging based on the total number of processed substrates has an advantage that the conditioning interval becomes constant even if the number of substrates constituting the lot varies.
- the method (1202) for determining based on the sum of the processing lots has an advantage that the conditioning time can be predicted when the process management is performed by the number of lots.
- the method (1203) of determining by the film thickness formed by the film forming apparatus has an advantage that conditioning can be performed at an appropriate timing when film peeling from the shield depends on an increase in film thickness.
- the method (1204) for determining based on the integrated power of the target has an advantage that conditioning can be performed at an appropriate timing when the target surface changes due to the film formation process.
- the method (1205) for determining by the integrated power per shield has an advantage that conditioning can be performed at an appropriate timing even when the cycle of shield replacement and target replacement is shifted.
- the method (1206) for determining by the standby time is an effect of stabilizing the film formation characteristics in a good state when there is a concern that the residual gas concentration or temperature in the film formation chamber changes during the standby time and the film formation characteristics deteriorate. There is.
- the method (1207) using the change of the film formation condition (product manufacturing condition) on the substrate as the determination condition has an effect that the film can be stably formed on the substrate even when the film formation condition is changed.
- the state of the shield inner wall surface and the target surface changes. These changes lead to variations in gas composition and electrical properties due to the gettering performance of the shield inner wall surface and the target surface, and as a result, cause variations in deposition properties on the substrate within the lot.
- the method (1207) using the change of the film formation condition (product manufacturing condition) on the substrate as the determination condition has an effect of suppressing such a defect.
- the method of performing conditioning after lot processing has an effect of preventing the lot processing from being interrupted when the production process is managed in units of lots (conditioning start conditions 1, 3, 5, 7, 9, 11 ).
- the method of interrupting the conditioning during the lot processing has an advantage that it can be carried out at an accurate conditioning timing (conditioning start conditions 2, 4, 6, 8, 10, 12).
- condition start condition 13 When the change of the film forming condition becomes the determination condition, the conditioning is performed before the lot processing (conditioning start condition 13).
- FIG. 13 is a view showing a result of measuring the number of particles adhered on the substrate once a day when the process of FIG. 10 is performed using the sputter film forming apparatus 1 according to the embodiment of the present invention.
- the horizontal axis represents the measurement date, and the vertical axis represents the number of particles of 0.09 ⁇ m or more observed on a 300 mm diameter silicon substrate.
- the number of particles was measured using a surface inspection apparatus “SP2” (trade name) manufactured by KLA Tencor. This data shows that a very good number of particles of 10 or less per substrate could be maintained over a relatively long period of 16 days.
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Abstract
Description
前記基板を載置するための基板ホルダーと、
前記基板ホルダーの近傍に配置され、前記基板ホルダーと前記ターゲットホルダーとの間を遮蔽する閉状態、または前記基板ホルダーと前記ターゲットホルダーとの間を開放する開状態にするための第1の遮蔽部材と、
前記第1の遮蔽部材を前記開状態に、または前記閉状態に開閉駆動するための第1の開閉駆動手段と、
前記基板ホルダーの面上でかつ前記基板の外周部に設置されている、リング形状を有する第2の遮蔽部材と、
前記第2の遮蔽部材が設置された前記基板ホルダーを、前記閉状態の前記第1の遮蔽部材に対して接近させたり、遠ざけたりするために、前記基板ホルダーを可動させるための駆動手段と、を備え、
前記第1の遮蔽部材には、前記第2の遮蔽部材方向に伸びた少なくとも1つのリング形状を有する第1の突起部が形成されており、
前記第2の遮蔽部材には、前記第1の遮蔽部材方向に伸びた少なくとも1つのリング形状を有する第2の突起部が形成されている、スパッタリング装置を用いた電子デバイスの製造方法であって、
前記駆動手段により前記基板ホルダーを、前記第1の遮蔽部材に接近させて、前記第1の突起部と前記第2の突起部とが非接触の状態で嵌り合うように位置させる第1工程と、
前記第1工程の後に、前記第1の突起部と前記第2の突起部とが非接触の状態で嵌り合う位置に維持したまま、前記ターゲットをスパッタリングする第2工程と、
前記第2工程の後に、前記第1の開閉駆動手段により前記第1の遮蔽部材を開状態にして、前記ターゲットをスパッタリングし、基板に成膜する第3工程と、を有することを特徴とする。
前記基板を載置するための基板ホルダーと、
前記基板ホルダーの近傍に配置され、前記基板ホルダーと前記ターゲットホルダーとの間を遮蔽する閉状態、または前記基板ホルダーと前記ターゲットホルダーとの間を開放する開状態にするための第1の遮蔽部材と、
前記第1の遮蔽部材を前記開状態に、または前記閉状態に開閉駆動するための第1の開閉駆動手段と、
前記基板ホルダーの面上でかつ前記基板の外周部に設置されている、リング形状を有する第2の遮蔽部材と、
前記閉状態の前記第1の遮蔽部材を、前記第2の遮蔽部材が設置された前記基板ホルダーに対して接近させたり、遠ざけたりするために、前記第1の遮蔽部材を可動させるための駆動手段と、を備え、
前記第1の遮蔽部材には、前記第2の遮蔽部材方向に伸びた少なくとも1つのリング形状を有する第1の突起部が形成されており、
前記第2の遮蔽部材には、前記第1の遮蔽部材方向に伸びた少なくとも1つのリング形状を有する第2の突起部が形成されている、スパッタリング装置を用いた電子デバイスの製造方法であって、
前記第1の突起部と前記第2の突起部とが非接触の状態で嵌り合うように、前記駆動手段により前記第1の遮蔽部材を位置させる第1工程と、
前記第1工程の後、前記第1の突起部と前記第2の突起部とが非接触の状態で嵌り合う位置に維持したまま、前記ターゲットをスパッタリングする第2工程と、
前記第2工程の後に、前記第1の開閉駆動手段により前記第1の遮蔽部材を開状態にして、前記ターゲットをスパッタリングし、基板に成膜する第3工程と、を有することを特徴とする。
前記基板を載置するための基板ホルダーと、
前記基板ホルダーの近傍に配置され、前記基板ホルダーと前記ターゲットホルダーとの間を遮蔽する閉状態、または前記基板ホルダーと前記ターゲットホルダーとの間を開放する開状態にするための第1の遮蔽部材と、
前記第1の遮蔽部材を前記開状態に、または前記閉状態に開閉駆動するための第1の開閉駆動手段と、
前記基板ホルダーの面上でかつ前記基板の外周部に設置されている、リング形状を有する第2の遮蔽部材と、
前記第2の遮蔽部材が設置された前記基板ホルダーを、前記閉状態の前記第1の遮蔽部材に対して接近させたり、遠ざけたりするために、前記基板ホルダーを可動させるための駆動手段と、を備え、
前記第1の遮蔽部材には、前記第2の遮蔽部材方向に伸びた少なくとも1つのリング形状を有する第1の突起部が形成されており、
前記第2の遮蔽部材には、前記第1の遮蔽部材方向に伸びた少なくとも1つのリング形状を有する第2の突起部が形成されている、スパッタリング装置を用いたスパッタリング方法であって、
前記駆動手段により前記基板ホルダーを、前記第1の遮蔽部材に接近させて、前記第1の突起部と前記第2の突起部とが非接触の状態で嵌り合うように位置させる第1工程と、
前記第1工程の後に、前記第1の突起部と前記第2の突起部とが非接触の状態で嵌り合う位置に維持したまま、前記ターゲットをスパッタリングする第2工程と、を有することを特徴とする。
前記基板を載置するための基板ホルダーと、
前記基板ホルダーの近傍に配置され、前記基板ホルダーと前記ターゲットホルダーとの間を遮蔽する閉状態、または前記基板ホルダーと前記ターゲットホルダーとの間を開放する開状態にするための第1の遮蔽部材と、
前記第1の遮蔽部材を前記開状態に、または前記閉状態に開閉駆動するための第1の開閉駆動手段と、
前記基板ホルダーの面上でかつ前記基板の外周部に設置されている、リング形状を有する第2の遮蔽部材と、
前記閉状態の前記第1の遮蔽部材を、前記第2の遮蔽部材が設置された前記基板ホルダーに対して接近させたり、遠ざけたりするために、前記第1の遮蔽部材を可動させるための駆動手段と、を備え、
前記第1の遮蔽部材には、前記第2の遮蔽部材方向に伸びた少なくとも1つのリング形状を有する第1の突起部が形成されており、
前記第2の遮蔽部材には、前記第1の遮蔽部材方向に伸びた少なくとも1つのリング形状を有する第2の突起部が形成されている、スパッタリング装置を用いたスパッタリング方法であって、
前記第1の突起部と前記第2の突起部とが非接触の状態で嵌り合うように、前記駆動手段により前記第1の遮蔽部材を位置させる第1工程と、
前記第1工程の後、前記第1の突起部と前記第2の突起部とが非接触の状態で嵌り合う位置に維持したまま、前記ターゲットをスパッタリングする第2工程と、を有することを特徴とする。
次に、図5A乃至5Fを参照して、コンディショニング時における成膜装置1の動作を説明する。なお、ここでコンディショニング処理とは、基板への成膜に影響しないように、基板シャッター19を閉じた状態で、成膜特性を安定させるために放電を行い、スパッタ粒子をチャンバーの内壁等に付着させる処理をいう。
次に、図6A乃至6Iを参照して、プリスパッタ動作および基板上への成膜を行う場合の成膜装置1の動作を説明する。ここで、プリスパッタとは、基板への成膜に影響しないように、シャッターが閉じた状態で、放電を安定させるために行うスパッタのことをいい、基板それぞれの成膜の前にはすべて、プリスパッタを行う。
図7A乃至図7Gを参照して、基板シャッター19と基板周辺カバーリング21により形成されるラビリンスシールの変形例を説明する。
上述の実施形態においては、単一ターゲットを用いた例を挙げたが、図8のような複数のターゲットのスパッタ装置を使用してもよい。この場合、一方のターゲットが他方のターゲットからのスパッタ-粒子の付着により汚染するのを防止するため、それぞれのターゲットに対して、複数のターゲットシャッター14を設ける必要がある。こうすることで、ターゲット相互のコンタミネーションを防ぐように動作することができる。
TiN成膜時、定期的にチャンバー壁にTiを成膜することでチャンバー壁のTiNの剥がれを防止する場合に、本発明を適用した場合を説明する。装置は上述の実施形態で説明した装置(図1A)を使用している。ターゲット4は、Tiを用いている。基板シャッター19と基板周辺カバーリング21の突起は、図7Aに示すものを使用している。本実施例で使用した図7Aの状態は、基板シャッター19の突起の数が1つ、基板周辺カバーリング21の突起の数が2つである。
ラビリンスシールのラビリンス経路の形が、実施例1と異なる場合の効果を調べるため、図7Bのように突起の数を変えた基板周辺カバーリング21用い、それ以外は実施例1と同じ装置と条件で実験を行った。本実施例で使用した基板周辺カバーリング21(図7B)は、基板シャッター19の突起の数が1つ、基板周辺カバーリング21の突起の数が1つである。実施例1の場合と同じ条件で実験したところ、検出されたTiの量は2×1010atms/cm2であった。
比較のため、基板ホルダー7の基板周辺カバーリング21と基板シャッター19に突起がなく、ラビリンスシールがない装置で、それ以外は同じ条件でコンディショニング放電の実験を行った。このときの基板周辺カバーリング21と基板シャッター19の平坦部の距離Dは実施例1、2と同じ距離で実験を行った。この結果、基板の外周部には目視により確認できる程度のTi膜が形成された。形成されたTi膜が厚いため、TXRFでは測定ができなかったので、TEM(Transmission Electron Microscope)により断面を観察することで膜厚を測定したところ、膜厚はおよそ5nm程度であった。なおTi膜5nmの厚みは、Tiの密度を4.5として計算した場合およそ3×1016atms/cm2である。従って、ラビリンスシールのある実施例1や実施例2よりも、ラビリンスシールを持たない本比較例の場合、基板載置面へ廻り込むスパッタ粒子が、非常に多いことが確認された。
図9は、本発明の実施形態にかかる成膜装置1を備える真空薄膜形成装置の一例であるフラッシュメモリ用積層膜形成装置(以下、単に「積層膜形成装置」ともいう。)の概略構成を示す図である。図9に示す積層膜形成装置は、真空搬送ロボット912を内部に備えた真空搬送室910を備えている。真空搬送室910には、ロードロック室911、基板加熱室913、第1のPVD(スパッタリング)室914、第2のPVD(スパッタリング)室915、基板冷却室917が、それぞれゲートバルブ920を介して連結されている。
Claims (8)
- 真空容器内に設けられ、基板に成膜するためのターゲットを保持するためのターゲットホルダーと、
前記基板を載置するための基板ホルダーと、
前記基板ホルダーの近傍に配置され、前記基板ホルダーと前記ターゲットホルダーとの間を遮蔽する閉状態、または前記基板ホルダーと前記ターゲットホルダーとの間を開放する開状態にするための第1の遮蔽部材と、
前記第1の遮蔽部材を前記開状態に、または前記閉状態に開閉駆動するための第1の開閉駆動手段と、
前記基板ホルダーの面上でかつ前記基板の外周部に設置されている、リング形状を有する第2の遮蔽部材と、
前記第2の遮蔽部材が設置された前記基板ホルダーを、前記閉状態の前記第1の遮蔽部材に対して接近させたり、遠ざけたりするために、前記基板ホルダーを可動させるための駆動手段と、を備え、
前記第1の遮蔽部材には、前記第2の遮蔽部材方向に伸びた少なくとも1つのリング形状を有する第1の突起部が形成されており、
前記第2の遮蔽部材には、前記第1の遮蔽部材方向に伸びた少なくとも1つのリング形状を有する第2の突起部が形成されている、スパッタリング装置を用いた電子デバイスの製造方法であって、
前記駆動手段により前記基板ホルダーを、前記第1の遮蔽部材に接近させて、前記第1の突起部と前記第2の突起部とが非接触の状態で嵌り合うように位置させる第1工程と、
前記第1工程の後に、前記第1の突起部と前記第2の突起部とが非接触の状態で嵌り合う位置に維持したまま、前記ターゲットをスパッタリングする第2工程と、
前記第2工程の後に、前記第1の開閉駆動手段により前記第1の遮蔽部材を開状態にして、前記ターゲットをスパッタリングし、基板に成膜する第3工程と、
を有することを特徴とする電子デバイスの製造方法。 - 前記スパッタリング装置は、
前記ターゲットホルダーの近傍に配置され、前記基板ホルダーと前記ターゲットホルダーとの間を遮蔽する閉状態、または前記基板ホルダーと前記ターゲットホルダーとの間を開放する開状態にするためのターゲットシャッターと、
前記ターゲットシャッターを前記開状態に、または前記閉状態に開閉駆動するためのターゲットシャッター駆動手段と、を更に備え、
前記第2工程は、
前記ターゲットシャッター駆動手段により前記ターゲットシャッターを閉状態にして、前記ターゲットをスパッタリングするターゲットクリーニング工程を更に有することを特徴とする請求項1に記載の電子デバイスの製造方法。 - 前記スパッタリング装置は、
前記ターゲットホルダーの近傍に配置され、前記基板ホルダーと前記ターゲットホルダーとの間を遮蔽する閉状態、または前記基板ホルダーと前記ターゲットホルダーとの間を開放する開状態にするためのターゲットシャッターと、
前記ターゲットシャッターを前記開状態に、または前記閉状態に開閉駆動するためのターゲットシャッター駆動手段と、を更に備え、
前記第2工程は、
前記ターゲットシャッター駆動手段により前記ターゲットシャッターを開状態にして、前記ターゲットをスパッタリングするコンディショニング工程を更に有することを特徴とする請求項1に記載の電子デバイスの製造方法。 - 真空容器内に設けられ、基板に成膜するためのターゲットを保持するためのターゲットホルダーと、
前記基板を載置するための基板ホルダーと、
前記基板ホルダーの近傍に配置され、前記基板ホルダーと前記ターゲットホルダーとの間を遮蔽する閉状態、または前記基板ホルダーと前記ターゲットホルダーとの間を開放する開状態にするための第1の遮蔽部材と、
前記第1の遮蔽部材を前記開状態に、または前記閉状態に開閉駆動するための第1の開閉駆動手段と、
前記基板ホルダーの面上でかつ前記基板の外周部に設置されている、リング形状を有する第2の遮蔽部材と、
前記閉状態の前記第1の遮蔽部材を、前記第2の遮蔽部材が設置された前記基板ホルダーに対して接近させたり、遠ざけたりするために、前記第1の遮蔽部材を可動させるための駆動手段と、を備え、
前記第1の遮蔽部材には、前記第2の遮蔽部材方向に伸びた少なくとも1つのリング形状を有する第1の突起部が形成されており、
前記第2の遮蔽部材には、前記第1の遮蔽部材方向に伸びた少なくとも1つのリング形状を有する第2の突起部が形成されている、スパッタリング装置を用いた電子デバイスの製造方法であって、
前記第1の突起部と前記第2の突起部とが非接触の状態で嵌り合うように、前記駆動手段により前記第1の遮蔽部材を位置させる第1工程と、
前記第1工程の後、前記第1の突起部と前記第2の突起部とが非接触の状態で嵌り合う位置に維持したまま、前記ターゲットをスパッタリングする第2工程と、
前記第2工程の後に、前記第1の開閉駆動手段により前記第1の遮蔽部材を開状態にして、前記ターゲットをスパッタリングし、基板に成膜する第3工程と、
を有することを特徴とする電子デバイスの製造方法。 - 前記スパッタリング装置は、
前記ターゲットホルダーの近傍に配置され、前記基板ホルダーと前記ターゲットホルダーとの間を遮蔽する閉状態、または前記基板ホルダーと前記ターゲットホルダーとの間を開放する開状態にするためのターゲットシャッターと、
前記ターゲットシャッターを前記開状態に、または前記閉状態に開閉駆動するためのターゲットシャッター駆動手段と、を更に備え、
前記第2工程は、
前記ターゲットシャッター駆動手段により前記ターゲットシャッターを閉状態にして、前記ターゲットをスパッタリングするターゲットクリーニング工程を更に有することを特徴とする請求項4に記載の電子デバイスの製造方法。 - 前記スパッタリング装置は、
前記ターゲットホルダーの近傍に配置され、前記基板ホルダーと前記ターゲットホルダーとの間を遮蔽する閉状態、または前記基板ホルダーと前記ターゲットホルダーとの間を開放する開状態にするためのターゲットシャッターと、
前記ターゲットシャッターを前記開状態に、または前記閉状態に開閉駆動するためのターゲットシャッター駆動手段と、を更に備え、
前記第2工程は、
前記ターゲットシャッター駆動手段により前記ターゲットシャッターを開状態にして、前記ターゲットをスパッタリングするコンディショニング工程を更に有することを特徴とする請求項4に記載の電子デバイスの製造方法。 - 真空容器内に設けられ、基板に成膜するためのターゲットを保持するためのターゲットホルダーと、
前記基板を載置するための基板ホルダーと、
前記基板ホルダーの近傍に配置され、前記基板ホルダーと前記ターゲットホルダーとの間を遮蔽する閉状態、または前記基板ホルダーと前記ターゲットホルダーとの間を開放する開状態にするための第1の遮蔽部材と、
前記第1の遮蔽部材を前記開状態に、または前記閉状態に開閉駆動するための第1の開閉駆動手段と、
前記基板ホルダーの面上でかつ前記基板の外周部に設置されている、リング形状を有する第2の遮蔽部材と、
前記第2の遮蔽部材が設置された前記基板ホルダーを、前記閉状態の前記第1の遮蔽部材に対して接近させたり、遠ざけたりするために、前記基板ホルダーを可動させるための駆動手段と、を備え、
前記第1の遮蔽部材には、前記第2の遮蔽部材方向に伸びた少なくとも1つのリング形状を有する第1の突起部が形成されており、
前記第2の遮蔽部材には、前記第1の遮蔽部材方向に伸びた少なくとも1つのリング形状を有する第2の突起部が形成されている、スパッタリング装置を用いたスパッタリング方法であって、
前記駆動手段により前記基板ホルダーを、前記第1の遮蔽部材に接近させて、前記第1の突起部と前記第2の突起部とが非接触の状態で嵌り合うように位置させる第1工程と、
前記第1工程の後に、前記第1の突起部と前記第2の突起部とが非接触の状態で嵌り合う位置に維持したまま、前記ターゲットをスパッタリングする第2工程と、
を有することを特徴とするスパッタリング方法。 - 真空容器内に設けられ、基板に成膜するためのターゲットを保持するためのターゲットホルダーと、
前記基板を載置するための基板ホルダーと、
前記基板ホルダーの近傍に配置され、前記基板ホルダーと前記ターゲットホルダーとの間を遮蔽する閉状態、または前記基板ホルダーと前記ターゲットホルダーとの間を開放する開状態にするための第1の遮蔽部材と、
前記第1の遮蔽部材を前記開状態に、または前記閉状態に開閉駆動するための第1の開閉駆動手段と、
前記基板ホルダーの面上でかつ前記基板の外周部に設置されている、リング形状を有する第2の遮蔽部材と、
前記閉状態の前記第1の遮蔽部材を、前記第2の遮蔽部材が設置された前記基板ホルダーに対して接近させたり、遠ざけたりするために、前記第1の遮蔽部材を可動させるための駆動手段と、を備え、
前記第1の遮蔽部材には、前記第2の遮蔽部材方向に伸びた少なくとも1つのリング形状を有する第1の突起部が形成されており、
前記第2の遮蔽部材には、前記第1の遮蔽部材方向に伸びた少なくとも1つのリング形状を有する第2の突起部が形成されている、スパッタリング装置を用いたスパッタリング方法であって、
前記第1の突起部と前記第2の突起部とが非接触の状態で嵌り合うように、前記駆動手段により前記第1の遮蔽部材を位置させる第1工程と、
前記第1工程の後、前記第1の突起部と前記第2の突起部とが非接触の状態で嵌り合う位置に維持したまま、前記ターゲットをスパッタリングする第2工程と、
を有することを特徴とするスパッタリング方法。
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JPWO2011117916A1 (ja) | 2013-07-04 |
CN102822379A (zh) | 2012-12-12 |
US9090974B2 (en) | 2015-07-28 |
KR20120131230A (ko) | 2012-12-04 |
JP5395255B2 (ja) | 2014-01-22 |
US20150364301A1 (en) | 2015-12-17 |
US9472384B2 (en) | 2016-10-18 |
US20130048489A1 (en) | 2013-02-28 |
KR101355303B1 (ko) | 2014-01-23 |
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