WO2011114543A1 - 接合材およびそれを用いた接合方法 - Google Patents
接合材およびそれを用いた接合方法 Download PDFInfo
- Publication number
- WO2011114543A1 WO2011114543A1 PCT/JP2010/057293 JP2010057293W WO2011114543A1 WO 2011114543 A1 WO2011114543 A1 WO 2011114543A1 JP 2010057293 W JP2010057293 W JP 2010057293W WO 2011114543 A1 WO2011114543 A1 WO 2011114543A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- bonding material
- bonding
- acid
- silver
- flux component
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/052—Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
- B22F1/056—Submicron particles having a size above 100 nm up to 300 nm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/102—Metallic powder coated with organic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
- B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
- B23K1/203—Fluxing, i.e. applying flux onto surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
- B23K35/025—Pastes, creams, slurries
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3006—Ag as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
- B23K35/3618—Carboxylic acids or salts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2301/00—Metallic composition of the powder or its coating
- B22F2301/25—Noble metals, i.e. Ag Au, Ir, Os, Pd, Pt, Rh, Ru
- B22F2301/255—Silver or gold
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2303/00—Functional details of metal or compound in the powder or product
- B22F2303/01—Main component
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2304/00—Physical aspects of the powder
- B22F2304/05—Submicron size particles
- B22F2304/054—Particle size between 1 and 100 nm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2304/00—Physical aspects of the powder
- B22F2304/05—Submicron size particles
- B22F2304/056—Particle size above 100 nm up to 300 nm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/42—Printed circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29139—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/2949—Coating material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/8301—Cleaning the layer connector, e.g. oxide removal step, desmearing
- H01L2224/83011—Chemical cleaning, e.g. etching, flux
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/83048—Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83053—Bonding environment
- H01L2224/83054—Composition of the atmosphere
- H01L2224/83075—Composition of the atmosphere being inert
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/201—Temperature ranges
- H01L2924/20106—Temperature range 200 C=<T<250 C, 473.15 K =<T < 523.15K
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/201—Temperature ranges
- H01L2924/20107—Temperature range 250 C=<T<300 C, 523.15K =<T< 573.15K
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/201—Temperature ranges
- H01L2924/20108—Temperature range 300 C=<T<350 C, 573.15K =<T< 623.15K
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/201—Temperature ranges
- H01L2924/20109—Temperature range 350 C=<T<400 C, 623.15K =<T< 673.15K
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/201—Temperature ranges
- H01L2924/2011—Temperature range 400 C=<T<450 C, 673.15K =<T< 723.15K
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/201—Temperature ranges
- H01L2924/20111—Temperature range 450 C=<T<500 C, 723.15K =<T< 773.15K
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/203—Ultrasonic frequency ranges, i.e. KHz
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0242—Shape of an individual particle
- H05K2201/0257—Nanoparticles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/08—Treatments involving gases
- H05K2203/086—Using an inert gas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1131—Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3489—Composition of fluxes; Methods of application thereof; Other methods of activating the contact surfaces
Abstract
Description
本発明で使用する銀ナノ粒子は、透過型電子顕微鏡(TEM)写真から算出される、平均一次粒子径で1~200nm、好ましくは1~150nm、一層好ましくは10~100nmのものを使用する。このような粒子径を有する粒子を使用することで、強い接合力を有した接合体を形成することができる。
なお、上記の銀ナノ粒子に加えて、サブミクロンオーダーの銀粒子を添加すれば、より接合強度の向上に寄与できる。具体的には、平均粒径が0.5μm以上の銀粒子を使用することが好ましい。本明細書における平均粒径の算出は、レーザー回折法に基づいて行った。すなわち、銀粒子の試料0.3gをイソプロピルアルコール50mLに入れ、出力50Wの超音波洗浄機で5分間分散させた後、マイクロトラック粒度分布測定装置(ハネウエル-日機装製の9320-X100)によってレーザー回折法で測定した際のD50(累積50質量%粒径)の値を平均粒径とした。この時の平均粒径の範囲は0.5~3.0μm、このましくは0.5~2.5μm、一層好ましくは0.5~2.0μmの範囲の粒子を併用することで、接合力の高い接合体を提供することができるようになる。
本発明にかかるペースト態をした接合材では、銀ナノ粒子を分散媒に分散させる。この時に使用する分散媒は、蒸気圧が低く取扱に好適なため、極性溶媒とすることが好ましい。
本発明にかかる接合材には上記の成分に加えて、フラックス成分としての有機物を添加する。具体的にはカルボキシル基を少なくとも二つ有したジカルボン酸、より好ましくはエーテル結合を有しかつカルボキシル基を少なくとも二つ有したジカルボン酸を選択するのがよい。こうした構成の物質を選択して添加することにより、窒素中で比較的低温での熱処理であっても有機物で被覆された銀ナノ粒子をバルク態の銀に変換できるようになる。
本発明にかかるペーストにはナノ銀粒子粉末をほどよく分散させる分散剤を添加してもよい。こうした分散剤を使用することで、ペースト中では粒子の独立性を確保し、また、フラックス成分と銀ナノ粒子の反応時には反応性を高め、より低温で均一な接合体を形成することができる。その性質としては、粒子表面と親和性を有するとともに分散媒に対しても親和性を有するものであれば、市販汎用のものであっても足りる。また、単独の種類のみならず、併用使用しても構わない。この添加量は、ペースト全体に対して10質量%以下、好ましくは5質量%以下、一層好ましくは3質量%以下である。
本発明に従う接合材は、大凡下記のような製造方法を経て提供される。例えば、特許第4344001号に記載の方法等により得られる銀ナノ粒子を使用する。こうして得られた銀ナノ粒子と上述の性質を有するフラックス成分と場合により分散剤を、上述の極性溶媒へ添加する。その後、混錬脱泡機へ導入して該成分の混錬物を形成させる。その後、場合によって機械的分散処理を行ってペーストを形成させる。
接合部の形成は、例えばメタルマスク、ディスペンサーもしくはスクリーン印刷法により、厚みとして20~200μm程度で接合材を塗布する。その後、被接合物を貼付して、加熱処理により接合材を金属化する。本ペーストであれば、窒素中での加熱処理であっても金属化できうるが、大気中での加熱処理であっても金属化することができる。
本発明のペーストを用いて、接合体を形成するには多段熱処理による金属化を行うことが好ましい。具体的には次のような工程を経るようにする。第一段階の焼成(予備焼成工程)は、接合材で添加している溶媒を蒸発除去させることを目的とする。ただ、あまりにも高温にて熱処理を施すと、溶媒のみならず銀ナノ粒子表面を構成する有機物まで除去してしまうことがある。その場合、接合強度が低くなるといった弊害が生じるので好ましくない。具体的には、銀ナノ粒子の分解温度未満の温度で行うのがよい。
予備焼成を経た後、本焼成工程により、ペーストを完全に金属化する。予備焼成工程から、本焼成工程に至る間に昇温工程を備えてもよい。この時の昇温速度は0.5~10℃/秒、好ましくは0.5~5℃/秒の範囲とすることが好ましい。
500mLビーカーへ硝酸銀(東洋化学株式会社製)13.4gを純水72.1gへ溶解させ、銀溶液を作製した。
Dhkl=(K・λ)/(β・cosθ)・・・(1)
ここで、各変数は以下の通りである。
D:結晶子径(nm)
λ:測定X線波長(nm)
β:結晶子による回折幅の広がり
θ:回折角のブラッグ角
K:Scherrer定数
なお、上の(1)式中における測定X線波長λは1.79、Scherrer定数Kには0.94を代入した。こうして確認された結晶子径は76.33nmであり、結晶粒の成長が進んでいることが確認された。
実施例1において、本焼成を350℃5分間の条件とした以外は同様にして接合体および焼成膜を形成した。シェア強度は56.2MPaであって、極めて高い値を示した。なお、この時の焼成膜の比抵抗は2.4μΩ・cmであり、極めて高い導電性を有している。また、得られた焼成膜のSEM像を図4に示した。窒素中の焼成にもかかわらず、粒子間焼結が進んでおり、粒子の形が判別できない程度のものになっていた。これは、粒子間焼結が進んでいることを示唆する。配合比等は表1または2に示した。また、試験条件については表3に示した。なお、実施例1と同様に確認した結晶子径は73.58nmであり、写真の結果と同様に結晶粒の成長が進んでいることがわかる。
実施例1において、金属成分をナノ粒子(ソルビン酸被覆)90.0gとあるものを、球状サブミクロン銀粒子(DOWAエレクトロニクス株式会社製/平均粒子径D50値:1.0μm)を45.0gと、そして実施例1に記載の方法により得られたソルビン酸被覆の銀ナノ粒子45.0gを混合とした以外は同様の配合比として、実施例1を繰り返した。金属成分の合計量は90.0gで同一にした。得られた接合材を用いた評価結果を表3に示した。
実施例2において、金属成分をナノ粒子(ソルビン酸被覆)90.0gとあるものを、球状サブミクロン銀粒子(DOWAエレクトロニクス株式会社製/平均粒子径D50値:1.0μm)45.0gと、そして実施例1に記載の方法により得られたソルビン酸被覆の銀ナノ粒子45.0gを混合とした以外は同様の配合比として、実施例2を繰り返した。金属成分の合計量は90.0gで同一にした。得られた接合材を用いた評価結果を表3に示した。
実施例2において、金属成分をナノ粒子(ソルビン酸被覆)90.0gとあるものを、球状サブミクロン銀粒子(DOWAエレクトロニクス株式会社製/平均粒子径D50値:1.0μm)を22.5gと、そして実施例1に記載の方法により得られたソルビン酸被覆の銀ナノ粒子67.5gを混合とした以外は同様の配合比として、実施例2を繰り返した。金属成分の合計量は90.0gで同一にした。得られた接合材を用いた評価結果を表3に示した。
実施例2において、金属成分をナノ粒子(ソルビン酸被覆)90.0gとあるものを、球状サブミクロン銀粒子(DOWAエレクトロニクス株式会社製/平均粒子径D50値:1.0μm)を67.5gと、そして実施例1に記載の方法により得られたソルビン酸被覆の銀ナノ粒子22.5gを混合とした以外は同様の配合比として、実施例2を繰り返した。金属成分の合計量は90.0gで同一にした。得られた接合材を用いた評価結果を表3に示した。
実施例4において、オキシジ酢酸0.2gとあるものを、オキシジ酢酸0.1gとした以外は同様の配合比として、実施例4を繰り返した。得られた接合材を用いた評価結果を表3に示した。
実施例7において、基板に銀めっきが施されていたのを、銅無垢の表面とした以外は実施例7を繰り返した。得られた接合材を用いた評価結果を表3に示した。
実施例4において、基板に銀めっきが施されていたのを、銅無垢の表面とした以外は実施例7を繰り返した。得られた接合材を用いた評価結果を表3に示した。
実施例4において、フラックス成分にオキシジ酢酸0.2gを用いていたのを、マロン酸0.1gとした以外は実施例4を繰り返した。得られた接合材を用いた評価結果を表3に示した。
オキシジ酢酸を添加せずに、接合材を作製した以外は実施例1に準じて試験を行った。シェア強度は最大で4.0MPaであり、平均値は2.7MPa(5点平均)であって、接合力が発揮できていなかった。サンプルのうち1つは接合強度の算出ができなかった。なお、この時の焼成膜の比抵抗は7.77μΩ・cmであり、実施例1に比較して比抵抗は高くなっていた。また、得られた焼成品のSEM像を図5に示した。窒素中の焼成のため、粒子間の焼結が進まず個々の粒子の形状が残存していることが確認された。配合比等は表1または2に示す。試験条件については表3に示した。なお、実施例1と同様に確認した結晶子径は57.92nmであり、写真で示された結果と同様、結晶の成長が実施例のものと比較して進んでいないことがわかる。
オキシジ酢酸を添加せずに、接合材を作製した以外は実施例2に準じて試験を行った。シェア強度は最大で13.2MPaであり、平均値は9.5MPa(5点平均値)であって、接合力が発揮できていなかった。なお、この時の焼成膜の比抵抗は4.20μΩ・cmであり、実施例1に比較して比抵抗は高くなっていた。また、得られた焼成品のSEM像を図6に示した。窒素中の焼成のため、比較例1ほどではないが、粒子間の焼結が進まず個々の粒子の形状が残存していることが確認された。配合比等は表1または2に示す。試験条件については、表3に示した。なお、実施例1と同様に確認した結晶子径は62.68nmであり、写真で示された結果と同様、結晶の成長が実施例のものと比較して進んでいないことがわかる。
接合対象物の接合を市販の高温鉛はんだペースト(日本スペリア株式会社製のSN515 RMA A M Q M-293T)で行った。接合は、大気中において基板上にペーストを塗布した後に接合物を載せ、0.5Nで加圧した後、150℃で2分間乾燥した後に、350℃で40秒間加温して、金属接着面の接合材を金属化することで行った。得られた接合体の接合強度は36.7MPaであった。
接合対象物の接合を市販の鉛フリーはんだペースト(千住金属工業株式会社製のM705-K2-V)で行った。接合方法は、大気中において基板上にペーストを塗布した後に接合物を載せ、0.5Nで加圧した後、150℃で2分間乾燥した後に、250℃で40秒間加温して、金属接着面の接合材を金属化することで行った。得られた接合体の接合強度は40.0MPaであった。
Claims (11)
- 平均一次粒子径が1~200nmであって、炭素数8以下の有機物質で被覆されている銀ナノ粒子と、少なくともカルボキシル基を二つ有するフラックス成分および分散媒を含む接合材。
- 平均粒径が0.5~3.0μmの銀粒子を含む、請求項1に記載の接合材。
- 前記フラックス成分はエーテル結合を有する、請求項1または2に記載の接合材。
- 前記フラックス成分はオキシジ酢酸である、請求項1または2に記載の接合材。
- 銀ナノ粒子の表面を被覆する有機物の炭素数は6である、請求項1ないし4のいずれかに記載の接合材。
- 前記分散媒は極性溶媒である、請求項1ないし5のいずれかに記載の接合材。
- 異なる二物質の接合方法であって、
接着物の接合面に少なくともカルボキシル基を二つ有する有機物を含むフラックス成分を含む接合材を塗布する工程と、
前記接合材の上に被接合物を配置する工程と、
前記被接合物が配置された状態で所定の温度に加熱する予備焼成の工程と、
前記予備焼成の温度より高い温度に加熱する本焼成の工程を有する接合方法。 - 前記フラックス成分はさらにエーテル結合を有する、請求項7に記載の接合方法。
- 前記予備焼成および前記本焼成の工程において、接合操作時の雰囲気は不活性ガス雰囲気下である、請求項7または8に記載の接合方法。
- 前記本焼成の工程は200℃以上500℃以下の温度で行う、請求項6ないし9のいずれかに記載の接合方法。
- 平均一次粒子径1~200nmである銀ナノ粒子を含んだ銀ペーストを塗布し、焼成して得られる接合体において、不活性雰囲気中250℃10分加熱した場合におけるAg(111)面における結晶子径が65nm以上となる接合体。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP10847952.8A EP2548678B1 (en) | 2010-03-15 | 2010-04-23 | Bonding material and bonding method using same |
KR1020127025315A KR101664991B1 (ko) | 2010-03-15 | 2010-04-23 | 접합재 및 이것을 이용한 접합방법 |
CN201080065477.8A CN102802846B (zh) | 2010-03-15 | 2010-04-23 | 接合材料及使用其的接合方法 |
US13/576,014 US9240256B2 (en) | 2010-03-15 | 2010-04-23 | Bonding material and bonding method using the same |
US14/966,598 US10008471B2 (en) | 2010-03-15 | 2015-12-11 | Bonding material and bonding method using the same |
US14/966,585 US10090275B2 (en) | 2010-03-15 | 2015-12-11 | Bonding method using bonding material |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010-058370 | 2010-03-15 | ||
JP2010058370 | 2010-03-15 |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/576,014 A-371-Of-International US9240256B2 (en) | 2010-03-15 | 2010-04-23 | Bonding material and bonding method using the same |
US14/966,585 Division US10090275B2 (en) | 2010-03-15 | 2015-12-11 | Bonding method using bonding material |
US14/966,598 Division US10008471B2 (en) | 2010-03-15 | 2015-12-11 | Bonding material and bonding method using the same |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2011114543A1 true WO2011114543A1 (ja) | 2011-09-22 |
Family
ID=44648666
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2010/057293 WO2011114543A1 (ja) | 2010-03-15 | 2010-04-23 | 接合材およびそれを用いた接合方法 |
Country Status (7)
Country | Link |
---|---|
US (3) | US9240256B2 (ja) |
EP (1) | EP2548678B1 (ja) |
KR (1) | KR101664991B1 (ja) |
CN (2) | CN102802846B (ja) |
HU (1) | HUE039370T2 (ja) |
TW (1) | TWI490170B (ja) |
WO (1) | WO2011114543A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018181083A1 (ja) * | 2017-03-28 | 2018-10-04 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合体 |
JPWO2020050194A1 (ja) * | 2018-09-03 | 2021-08-26 | 株式会社大阪ソーダ | 銀ナノ粒子 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2455179B1 (en) * | 2009-07-14 | 2021-04-14 | DOWA Electronics Materials Co., Ltd. | Bonding material and bonding method each using metal nanoparticles |
HUE039370T2 (hu) * | 2010-03-15 | 2018-12-28 | Dowa Electronics Materials Co | Kötõanyag és rögzítési eljárás annak használatával |
WO2011155055A1 (ja) | 2010-06-11 | 2011-12-15 | Dowaエレクトロニクス株式会社 | 低温焼結性接合材および該接合材を用いた接合方法 |
KR102158290B1 (ko) * | 2010-11-22 | 2020-09-21 | 도와 일렉트로닉스 가부시키가이샤 | 접합재료, 접합체, 및 접합방법 |
US20120291454A1 (en) * | 2011-05-20 | 2012-11-22 | Baker Hughes Incorporated | Thermoelectric Devices Using Sintered Bonding |
WO2014046058A1 (ja) | 2012-09-20 | 2014-03-27 | ローム株式会社 | パワーモジュール半導体装置およびインバータ装置、およびパワーモジュール半導体装置の製造方法、および金型 |
JP6099472B2 (ja) * | 2013-04-26 | 2017-03-22 | Dowaエレクトロニクス株式会社 | 金属ナノ粒子分散体、金属ナノ粒子分散体の製造方法および接合方法 |
KR20150018023A (ko) * | 2013-08-08 | 2015-02-23 | 삼성전기주식회사 | 페이스트 인쇄장치 및 페이스트 인쇄방법 |
KR102362072B1 (ko) * | 2014-02-24 | 2022-02-11 | 헨켈 아게 운트 코. 카게아아 | 소결성 금속 입자 및 전자제품 응용에서의 그의 용도 |
JP6373066B2 (ja) * | 2014-05-30 | 2018-08-15 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合方法 |
US9847313B2 (en) * | 2015-04-24 | 2017-12-19 | Kulicke And Soffa Industries, Inc. | Thermocompression bonders, methods of operating thermocompression bonders, and horizontal scrub motions in thermocompression bonding |
JP6920029B2 (ja) | 2016-04-04 | 2021-08-18 | 日亜化学工業株式会社 | 金属粉焼結ペースト及びその製造方法、導電性材料の製造方法 |
KR20190096731A (ko) * | 2018-02-09 | 2019-08-20 | 현대자동차주식회사 | 반도체 장치용 소결 접합 방법 |
CN111644739A (zh) * | 2020-06-15 | 2020-09-11 | 哈尔滨工业大学 | 用于空气气氛钎焊ysz陶瓷的钎料体系及钎焊方法 |
CN116825768B (zh) | 2020-10-14 | 2024-02-23 | 罗姆股份有限公司 | 半导体模块 |
DE202021004370U1 (de) | 2020-10-14 | 2023-12-12 | Rohm Co., Ltd. | HalbleitermoduL |
US20230245960A1 (en) | 2020-10-14 | 2023-08-03 | Rohm Co., Ltd. | Semiconductor module |
CN113801581B (zh) * | 2021-09-18 | 2023-01-24 | 中国民航大学 | 一种专用于氧化锆陶瓷与钛基合金的高温胶黏剂制备方法 |
CN114262583B (zh) * | 2021-12-21 | 2022-12-20 | 深圳市中金岭南有色金属股份有限公司科学技术开发院 | 用于大功率led芯片、元器件高导互联固晶的银导电胶 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006095534A (ja) * | 2004-09-28 | 2006-04-13 | Ebara Corp | 接合方法及び装置 |
JP2007077479A (ja) * | 2005-09-16 | 2007-03-29 | Dowa Holdings Co Ltd | 複合粒子粉、その分散液またはペースト並びにそれらの製造法 |
JP2008161907A (ja) * | 2006-12-28 | 2008-07-17 | Hitachi Ltd | 低温接合用材料及び接合方法 |
JP2009104807A (ja) * | 2007-10-19 | 2009-05-14 | Mitsubishi Paper Mills Ltd | 導電性発現方法および導電性部材 |
JP2009120923A (ja) * | 2007-11-19 | 2009-06-04 | Hitachi Ltd | 接合用材料 |
JP4344001B2 (ja) | 2007-10-24 | 2009-10-14 | Dowaエレクトロニクス株式会社 | 微小銀粒子含有組成物、その製造方法、微小銀粒子の製造方法および微小銀粒子を有するペースト |
JP2009267374A (ja) | 2008-03-31 | 2009-11-12 | Hitachi Ltd | 半導体装置及び接合材料 |
JP2009279649A (ja) | 2008-04-23 | 2009-12-03 | Toyota Motor Corp | 接合材料及び接合材料の成分算出方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0686926A (ja) * | 1991-11-25 | 1994-03-29 | Nisshin Flour Milling Co Ltd | 超微粒子で表面が被覆された粒子の製造方法 |
TW282427B (ja) * | 1993-02-05 | 1996-08-01 | Litton Systems Inc | |
US6677179B2 (en) * | 2001-11-16 | 2004-01-13 | Indium Corporation Of America | Method of applying no-flow underfill |
JP3788335B2 (ja) * | 2001-12-07 | 2006-06-21 | 千住金属工業株式会社 | ソルダペースト |
US7182241B2 (en) * | 2002-08-09 | 2007-02-27 | Micron Technology, Inc. | Multi-functional solder and articles made therewith, such as microelectronic components |
US20040245648A1 (en) * | 2002-09-18 | 2004-12-09 | Hiroshi Nagasawa | Bonding material and bonding method |
US7059512B2 (en) * | 2002-11-06 | 2006-06-13 | Ricoh Company, Ltd. | Solder alloy material layer composition, electroconductive and adhesive composition, flux material layer composition, solder ball transferring sheet, bump and bump forming process, and semiconductor device |
JP3797990B2 (ja) * | 2003-08-08 | 2006-07-19 | 株式会社東芝 | 熱硬化性フラックス及びはんだペースト |
JP2006009120A (ja) * | 2004-06-29 | 2006-01-12 | Asahi Kasei Corp | 金属微粒子分散体 |
US7348210B2 (en) * | 2005-04-27 | 2008-03-25 | International Business Machines Corporation | Post bump passivation for soft error protection |
JP4638825B2 (ja) * | 2006-02-01 | 2011-02-23 | 三井金属鉱業株式会社 | 多成分系金属粒子スラリー及びそのスラリーを用いた導電性インク又は導電性ペースト |
JP4757070B2 (ja) * | 2006-03-27 | 2011-08-24 | 富士通株式会社 | 半田付け用フラックス及び半導体素子の接合方法 |
US20070284412A1 (en) * | 2006-05-31 | 2007-12-13 | Prakash Anna M | Solder flux composition |
JP4876979B2 (ja) | 2007-03-05 | 2012-02-15 | 戸田工業株式会社 | 接合部材および接合方法 |
JP2009097074A (ja) | 2007-09-27 | 2009-05-07 | Mitsuboshi Belting Ltd | 金属ナノ粒子ペーストおよびパターン形成方法 |
WO2009044801A1 (ja) | 2007-10-03 | 2009-04-09 | Hitachi Chemical Company, Ltd. | 接着剤組成物及びそれを用いた電子部品搭載基板並びに半導体装置 |
US20090148600A1 (en) | 2007-12-05 | 2009-06-11 | Xerox Corporation | Metal Nanoparticles Stabilized With a Carboxylic Acid-Organoamine Complex |
JP2009227736A (ja) * | 2008-03-19 | 2009-10-08 | Mitsuboshi Belting Ltd | インクジェット印刷用インキ組成物 |
KR101525099B1 (ko) | 2008-06-30 | 2015-06-02 | 도와 일렉트로닉스 가부시키가이샤 | 미소금속입자함유 조성물 및 그 제조 방법 |
JP2010050189A (ja) * | 2008-08-20 | 2010-03-04 | Hitachi Metals Ltd | 接合材、半導体装置およびその製造方法 |
EP2455179B1 (en) | 2009-07-14 | 2021-04-14 | DOWA Electronics Materials Co., Ltd. | Bonding material and bonding method each using metal nanoparticles |
JP5890603B2 (ja) * | 2009-08-28 | 2016-03-22 | Dowaエレクトロニクス株式会社 | 金属ナノ粒子とその凝集体、金属ナノ粒子分散体、それを用いて形成された部材 |
HUE039370T2 (hu) * | 2010-03-15 | 2018-12-28 | Dowa Electronics Materials Co | Kötõanyag és rögzítési eljárás annak használatával |
WO2011155055A1 (ja) * | 2010-06-11 | 2011-12-15 | Dowaエレクトロニクス株式会社 | 低温焼結性接合材および該接合材を用いた接合方法 |
-
2010
- 2010-04-23 HU HUE10847952A patent/HUE039370T2/hu unknown
- 2010-04-23 CN CN201080065477.8A patent/CN102802846B/zh active Active
- 2010-04-23 WO PCT/JP2010/057293 patent/WO2011114543A1/ja active Application Filing
- 2010-04-23 EP EP10847952.8A patent/EP2548678B1/en active Active
- 2010-04-23 CN CN201610548332.2A patent/CN106216655A/zh active Pending
- 2010-04-23 US US13/576,014 patent/US9240256B2/en active Active
- 2010-04-23 KR KR1020127025315A patent/KR101664991B1/ko active IP Right Grant
- 2010-05-10 TW TW099114760A patent/TWI490170B/zh active
-
2015
- 2015-12-11 US US14/966,585 patent/US10090275B2/en active Active
- 2015-12-11 US US14/966,598 patent/US10008471B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006095534A (ja) * | 2004-09-28 | 2006-04-13 | Ebara Corp | 接合方法及び装置 |
JP2007077479A (ja) * | 2005-09-16 | 2007-03-29 | Dowa Holdings Co Ltd | 複合粒子粉、その分散液またはペースト並びにそれらの製造法 |
JP2008161907A (ja) * | 2006-12-28 | 2008-07-17 | Hitachi Ltd | 低温接合用材料及び接合方法 |
JP2009104807A (ja) * | 2007-10-19 | 2009-05-14 | Mitsubishi Paper Mills Ltd | 導電性発現方法および導電性部材 |
JP4344001B2 (ja) | 2007-10-24 | 2009-10-14 | Dowaエレクトロニクス株式会社 | 微小銀粒子含有組成物、その製造方法、微小銀粒子の製造方法および微小銀粒子を有するペースト |
JP2009120923A (ja) * | 2007-11-19 | 2009-06-04 | Hitachi Ltd | 接合用材料 |
JP2009267374A (ja) | 2008-03-31 | 2009-11-12 | Hitachi Ltd | 半導体装置及び接合材料 |
JP2009279649A (ja) | 2008-04-23 | 2009-12-03 | Toyota Motor Corp | 接合材料及び接合材料の成分算出方法 |
Non-Patent Citations (2)
Title |
---|
MORITA ET AL.: "Development of lead-free bonding technology for high-temperature environment using silver oxide particles of micrometer size", MATERIA, vol. 49, no. 1, 2010 |
See also references of EP2548678A4 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018181083A1 (ja) * | 2017-03-28 | 2018-10-04 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合体 |
JP2018165387A (ja) * | 2017-03-28 | 2018-10-25 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合体 |
JPWO2020050194A1 (ja) * | 2018-09-03 | 2021-08-26 | 株式会社大阪ソーダ | 銀ナノ粒子 |
JP7120314B2 (ja) | 2018-09-03 | 2022-08-17 | 株式会社大阪ソーダ | 銀ナノ粒子 |
Also Published As
Publication number | Publication date |
---|---|
US20160172328A1 (en) | 2016-06-16 |
KR20130034013A (ko) | 2013-04-04 |
US9240256B2 (en) | 2016-01-19 |
KR101664991B1 (ko) | 2016-10-11 |
TWI490170B (zh) | 2015-07-01 |
CN102802846A (zh) | 2012-11-28 |
TW201130741A (en) | 2011-09-16 |
US10008471B2 (en) | 2018-06-26 |
EP2548678A1 (en) | 2013-01-23 |
US20120298009A1 (en) | 2012-11-29 |
EP2548678B1 (en) | 2018-07-11 |
US10090275B2 (en) | 2018-10-02 |
US20160099087A1 (en) | 2016-04-07 |
CN102802846B (zh) | 2017-05-24 |
EP2548678A4 (en) | 2015-11-25 |
CN106216655A (zh) | 2016-12-14 |
HUE039370T2 (hu) | 2018-12-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4928639B2 (ja) | 接合材およびそれを用いた接合方法 | |
WO2011114543A1 (ja) | 接合材およびそれを用いた接合方法 | |
WO2011155055A1 (ja) | 低温焼結性接合材および該接合材を用いた接合方法 | |
JP6214600B2 (ja) | 接合材料および接合体 | |
JP5651113B2 (ja) | 金属ナノ粒子を用いた接合材および接合方法 | |
JP5824201B2 (ja) | 接合材およびそれを用いた接合方法 | |
WO2015060245A1 (ja) | 銀ペースト及びそれを用いた半導体装置、並びに銀ペーストの製造方法 | |
JP5487301B2 (ja) | 低温焼結性接合材および該接合材を用いた接合方法 | |
JP6338419B2 (ja) | 金属粒子組成物、接合材及びそれを用いた接合方法 | |
JP2017128782A (ja) | ニッケル微粒子含有組成物及び接合材 | |
TW202231398A (zh) | 氧化銅糊料及電子零件之製造方法 | |
JP2020122175A (ja) | ナノ銀粒子を用いた接合材料及び接合方法 | |
JP2022113002A (ja) | 接合用シート | |
JP2020007593A (ja) | 接合材料、それを含有する接合材料ペースト、並びにそれらを用いた接合方法及び半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201080065477.8 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10847952 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2010847952 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13576014 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20127025315 Country of ref document: KR Kind code of ref document: A |