WO2011099266A1 - プラズマディスプレイパネルの製造方法 - Google Patents
プラズマディスプレイパネルの製造方法 Download PDFInfo
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- WO2011099266A1 WO2011099266A1 PCT/JP2011/000678 JP2011000678W WO2011099266A1 WO 2011099266 A1 WO2011099266 A1 WO 2011099266A1 JP 2011000678 W JP2011000678 W JP 2011000678W WO 2011099266 A1 WO2011099266 A1 WO 2011099266A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
- H01J11/34—Vessels, containers or parts thereof, e.g. substrates
- H01J11/40—Layers for protecting or enhancing the electron emission, e.g. MgO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/10—AC-PDPs with at least one main electrode being out of contact with the plasma
- H01J11/12—AC-PDPs with at least one main electrode being out of contact with the plasma with main electrodes provided on both sides of the discharge space
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2211/00—Plasma display panels with alternate current induction of the discharge, e.g. AC-PDPs
- H01J2211/20—Constructional details
- H01J2211/34—Vessels, containers or parts thereof, e.g. substrates
- H01J2211/40—Layers for protecting or enhancing the electron emission, e.g. MgO layers
Definitions
- the technology disclosed herein relates to a method for manufacturing a plasma display panel used for a display device or the like.
- a plasma display panel (hereinafter referred to as PDP) is composed of a front plate and a back plate.
- the front plate includes a glass substrate, a display electrode formed on one main surface of the glass substrate, a dielectric layer that covers the display electrode and functions as a capacitor, and magnesium oxide formed on the dielectric layer It is comprised with the protective layer which consists of (MgO).
- the back plate includes a glass substrate, a data electrode formed on one main surface of the glass substrate, a base dielectric layer covering the data electrode, a partition formed on the base dielectric layer, and each partition It is comprised with the fluorescent substance layer which light-emits each in red, green, and blue formed in between.
- Protective layer has two main functions. The first is to protect the dielectric layer from ion bombardment due to discharge. The second is to release initial electrons for generating an address discharge. By protecting the dielectric layer from ion bombardment, an increase in discharge voltage is suppressed. By increasing the number of initial electron emissions, address discharge errors that cause image flickering are reduced. In order to increase the initial electron emission number, a technique for adding impurities to MgO and a technique for forming MgO particles on the MgO film are known (see, for example, Patent Documents 1, 2, 3, 4, 5, etc.). ).
- JP 2002-260535 A Japanese Patent Laid-Open No. 11-339665 JP 2006-59779 A JP-A-8-236028 JP-A-10-334809
- a method for manufacturing a PDP having a discharge space and a protective layer facing the discharge space The protective layer is exposed to the reducing organic gas by introducing a gas containing the reducing organic gas into the discharge space. Next, reducing organic gas is discharged from the discharge space. Next, the discharge gas is sealed in the discharge space.
- FIG. 1 is a perspective view showing a structure of a PDP according to an embodiment.
- FIG. 2 is an electrode array diagram of the PDP according to the embodiment.
- FIG. 3 is a block circuit diagram of the plasma display device according to the embodiment.
- FIG. 4 is a drive voltage waveform diagram of the plasma display apparatus according to the exemplary embodiment.
- FIG. 5 is a flowchart showing an example of a method for manufacturing a PDP according to the embodiment.
- FIG. 6 is a diagram showing a first temperature profile example.
- FIG. 7 is a diagram showing a second temperature profile example.
- FIG. 8 is a diagram illustrating a third temperature profile example.
- FIG. 9 is a schematic view showing a cross section of the PDP according to the embodiment.
- FIG. 10 is a diagram showing the electron emission performance and the Vscn lighting voltage.
- the basic structure of the PDP is a general AC surface discharge type PDP.
- the PDP 1 has a front plate 2 made of a front glass substrate 3 and a back plate 10 made of a back glass substrate 11 facing each other.
- the front plate 2 and the back plate 10 are hermetically sealed with a sealing material whose outer peripheral portion is made of glass frit or the like.
- the discharge space 16 inside the sealed PDP 1 is filled with discharge gas such as neon (Ne) and xenon (Xe) at a pressure of 53 kPa (400 Torr) to 80 kPa (600 Torr).
- a pair of strip-shaped display electrodes 6 each consisting of a scanning electrode 4 and a sustain electrode 5 and a plurality of black stripes 7 are arranged in parallel to each other.
- a dielectric layer 8 that functions as a capacitor is formed on the front glass substrate 3 so as to cover the display electrodes 6 and the black stripes 7.
- a protective layer 9 made of magnesium oxide (MgO) or the like is formed on the surface of the dielectric layer 8. The protective layer 9 will be described later in detail.
- Scan electrode 4 and sustain electrode 5 are each formed by laminating a bus electrode made of Ag on a transparent electrode made of a conductive metal oxide such as indium tin oxide (ITO), tin oxide (SnO 2 ), and zinc oxide (ZnO). Has been.
- ITO indium tin oxide
- SnO 2 tin oxide
- ZnO zinc oxide
- a plurality of data electrodes 12 made of a conductive material mainly composed of silver (Ag) are arranged in parallel to each other in a direction orthogonal to the display electrodes 6.
- the data electrode 12 is covered with a base dielectric layer 13. Further, a partition wall 14 having a predetermined height is formed on the underlying dielectric layer 13 between the data electrodes 12 to divide the discharge space 16.
- a phosphor layer 15 that emits red light by ultraviolet rays, a phosphor layer 15 that emits green light, and a phosphor layer 15 that emits blue light are sequentially applied and formed for each data electrode 12. Yes.
- a discharge cell is formed at a position where the display electrode 6 and the data electrode 12 intersect. Discharge cells having red, green, and blue phosphor layers 15 arranged in the direction of the display electrode 6 serve as pixels for color display.
- the discharge gas sealed in the discharge space 16 contains 10% by volume or more and 30% or less of Xe.
- the PDP 1 has n scan electrodes SC1, SC2, SC3... SCn (4 in FIG. 1) arranged extending in the row direction.
- the PDP 1 has n sustain electrodes SU1, SU2, SU3,... SUn (5 in FIG. 1) arranged to extend in the row direction.
- the PDP 1 has m data electrodes D1... Dm (12 in FIG. 1) arranged to extend in the column direction.
- a discharge cell is formed at a portion where a pair of scan electrode SC1 and sustain electrode SU1 intersects with one data electrode D1.
- M ⁇ n discharge cells are formed in the discharge space.
- the scan electrode and the sustain electrode are connected to a connection terminal provided at a peripheral end portion outside the image display area of the front plate.
- the data electrode is connected to a connection terminal provided at a peripheral end portion outside the image display area of the back plate.
- the plasma display device includes a PDP 1, an image signal processing circuit 21, a data electrode drive circuit 22, a scan electrode drive circuit 23, a sustain electrode drive circuit 24, a timing generation circuit 25, and a power supply circuit (not shown). It has.
- the image signal processing circuit 21 converts the image signal sig into image data for each subfield.
- the data electrode drive circuit 22 converts the image data for each subfield into signals corresponding to the data electrodes D1 to Dm, and drives the data electrodes D1 to Dm.
- the timing generation circuit 25 generates various timing signals based on the horizontal synchronization signal H and the vertical synchronization signal V, and supplies them to each drive circuit block.
- Scan electrode drive circuit 23 supplies a drive voltage waveform to scan electrodes SC1 to SCn based on the timing signal.
- Sustain electrode drive circuit 24 supplies drive voltage waveforms to sustain electrodes SU1 to SUn based on the timing signal.
- one field is composed of a plurality of subfields.
- the subfield has an initialization period, an address period, and a sustain period.
- the initialization period is a period in which the initialization discharge is generated in the discharge cell.
- the address period is a period for generating an address discharge for selecting a discharge cell to emit light after the initialization period.
- the sustain period is a period in which a sustain discharge is generated in the discharge cell selected in the address period.
- sustain electrodes SU1 to SUn are maintained at positive voltage Ve1 (V), and a ramp voltage that gradually decreases from voltage Vi3 (V) to voltage Vi4 (V) is applied to scan electrodes SC1 to SCn. Then, the second weak setup discharge is generated in all the discharge cells.
- the wall voltage between scan electrodes SC1 to SCn and sustain electrodes SU1 to SUn is weakened.
- the wall voltage on the data electrodes D1 to Dm is adjusted to a value suitable for the write operation.
- Address discharge occurs between data electrode Dk and scan electrode SC1, and between sustain electrode SU1 and scan electrode SC1.
- a positive wall voltage is accumulated on scan electrode SC1 of the discharge cell in which the address discharge has occurred.
- a negative wall voltage is accumulated on sustain electrode SU1 of the discharge cell in which the address discharge has occurred.
- a negative wall voltage is accumulated on the data electrode Dk of the discharge cell in which the address discharge has occurred.
- the voltage at the intersection between the data electrodes D1 to Dm to which the address pulse voltage Vd (V) is not applied and the scan electrode SC1 does not exceed the discharge start voltage. Accordingly, no address discharge occurs.
- the above address operation is sequentially performed until the discharge cell in the nth row.
- the address period ends when the address operation of the discharge cell in the n-th row ends.
- sustain pulse voltages Vs (V) corresponding to the luminance weight alternately to scan electrodes SC1 to SCn and sustain electrodes SU1 to SUn are applied. Sustain discharge occurs continuously.
- the sustain operation in the sustain period ends.
- a selective initializing operation is performed in which an initializing discharge is selectively generated only in the discharge cells that have generated a sustain discharge in the previous subfield.
- the all-cell initializing operation and the selective initializing operation are selectively used between the first subfield and the other subfields.
- the all-cell initialization operation may be performed in an initialization period in a subfield other than the first subfield. Further, the all-cell initialization operation may be performed once every several fields.
- the operation in the writing period and the sustain period is the same as the operation in the first subfield described above.
- the operation in the sustain period is not necessarily the same as the operation in the first subfield described above.
- the number of sustain discharge pulses Vs (V) changes in order to generate a sustain discharge that can provide luminance corresponding to the image signal sig.
- the sustain period is driven to control the luminance for each subfield.
- the manufacturing method of PDP 1 includes a front plate manufacturing step A1, a back plate manufacturing step B1, a frit coating step B2, a sealing step C1, a reducing gas introduction step C2, and an exhaust step. C3 and discharge gas supply step C4.
- Front plate manufacturing process A1 In front plate manufacturing step A1, scan electrodes 4, sustain electrodes 5, and black stripes 7 are formed on front glass substrate 3 by photolithography. Scan electrode 4 and sustain electrode 5 have metal bus electrodes 4b and 5b containing silver (Ag) for ensuring conductivity. Scan electrode 4 and sustain electrode 5 have transparent electrodes 4a and 5a. The metal bus electrode 4b is laminated on the transparent electrode 4a. The metal bus electrode 5b is laminated on the transparent electrode 5a.
- ITO indium tin oxide
- lithography For the material of the transparent electrodes 4a and 5a, indium tin oxide (ITO) or the like is used to ensure transparency and electric conductivity.
- ITO indium tin oxide
- an ITO thin film is formed on the front glass substrate 3 by sputtering or the like.
- transparent electrodes 4a and 5a having a predetermined pattern are formed by lithography.
- an electrode paste containing silver (Ag), a glass frit for binding silver, a photosensitive resin, a solvent, and the like is used as the material of the metal bus electrodes 4b and 5b.
- an electrode paste is applied to the front glass substrate 3 by a screen printing method or the like.
- the solvent in the electrode paste is removed by a drying furnace.
- the electrode paste is exposed through a photomask having a predetermined pattern.
- metal bus electrodes 4b and 5b are formed by the above steps.
- the black stripe 7 is formed of a material containing a black pigment.
- the dielectric layer 8 is formed.
- a dielectric paste containing a dielectric glass frit, a resin, a solvent, and the like is used as a material for the dielectric layer 8.
- a dielectric paste is applied on the front glass substrate 3 by a die coating method or the like so as to cover the scan electrodes 4, the sustain electrodes 5 and the black stripes 7 with a predetermined thickness.
- the solvent in the dielectric paste is removed by a drying furnace.
- the dielectric paste is fired at a predetermined temperature in a firing furnace. That is, the resin in the dielectric paste is removed. Further, the dielectric glass frit is melted.
- the molten dielectric glass frit is vitrified after firing.
- the dielectric layer 8 is formed.
- a screen printing method, a spin coating method, or the like can be used.
- a film that becomes the dielectric layer 8 can be formed by CVD (Chemical Vapor Deposition) method or the like without using the dielectric paste.
- the material of the dielectric layer 8 is at least one selected from bismuth oxide (Bi 2 O 3 ), calcium oxide (CaO), strontium oxide (SrO), barium oxide (BaO), molybdenum oxide (MoO 3 ), and oxidation. And at least one selected from tungsten (WO 3 ), cerium oxide (CeO 2 ), and manganese dioxide (MnO 2 ).
- the binder component is ethyl cellulose, or terpineol containing 1% to 20% by weight of acrylic resin, or butyl carbitol acetate.
- dioctyl phthalate, dibutyl phthalate, triphenyl phosphate and tributyl phosphate are added to the paste as needed, and glycerol monooleate, sorbitan sesquioleate, homogenol (Kao Corporation) as a dispersant.
- the printing property may be improved as a paste by adding a phosphate ester of an alkyl allyl group, etc.
- a protective layer 9 is formed on the dielectric layer 8. Details of the protective layer 9 will be described later.
- the scanning electrode 4, the sustaining electrode 5, the black stripe 7, the dielectric layer 8, and the protective layer 9 are formed on the front glass substrate 3, and the front plate 2 is completed.
- the data electrode 12 is formed on the rear glass substrate 11 by photolithography.
- a data electrode paste containing silver (Ag) for ensuring conductivity, a glass frit for binding silver, a photosensitive resin, a solvent, and the like is used as a material of the data electrode 12.
- the data electrode paste is applied on the rear glass substrate 11 with a predetermined thickness by a screen printing method or the like.
- the solvent in the data electrode paste is removed by a drying furnace.
- the data electrode paste is exposed through a photomask having a predetermined pattern.
- the data electrode paste is developed to form a data electrode pattern.
- the data electrode pattern is fired at a predetermined temperature in a firing furnace.
- the data electrode 12 is formed by the above process.
- a sputtering method, a vapor deposition method, or the like can be used.
- the base dielectric layer 13 is formed.
- a base dielectric paste containing a dielectric glass frit, a resin, a solvent, and the like is used as a material for the base dielectric layer 13.
- a base dielectric paste is applied by a screen printing method or the like so as to cover the data electrode 12 on the rear glass substrate 11 on which the data electrode 12 is formed with a predetermined thickness.
- the solvent in the base dielectric paste is removed by a drying furnace.
- the base dielectric paste is fired at a predetermined temperature in a firing furnace. That is, the resin in the base dielectric paste is removed. Further, the dielectric glass frit is melted. The molten dielectric glass frit is vitrified after firing.
- the base dielectric layer 13 is formed.
- a die coating method, a spin coating method, or the like can be used.
- a film to be the base dielectric layer 13 can be formed by CVD (Chemical Vapor Deposition) method or the like without using the base dielectric paste.
- the barrier ribs 14 are formed by photolithography.
- a partition paste containing a filler, a glass frit for binding the filler, a photosensitive resin, a solvent, and the like is used as a material for the partition wall 14.
- the barrier rib paste is applied on the underlying dielectric layer 13 with a predetermined thickness by a die coating method or the like.
- the solvent in the partition wall paste is removed by a drying furnace.
- the barrier rib paste is exposed through a photomask having a predetermined pattern.
- the barrier rib paste is developed to form a barrier rib pattern.
- the partition pattern is fired at a predetermined temperature in a firing furnace. That is, the photosensitive resin in the partition pattern is removed.
- the partition wall 14 is formed by the above process.
- a sandblast method or the like can be used.
- the phosphor layer 15 is formed.
- a phosphor paste containing phosphor particles, a binder, a solvent, and the like is used as the material of the phosphor layer 15.
- a phosphor paste is applied on the base dielectric layer 13 between adjacent barrier ribs 14 and on the side surfaces of the barrier ribs 14 by a dispensing method or the like.
- the solvent in the phosphor paste is removed by a drying furnace.
- the phosphor paste is fired at a predetermined temperature in a firing furnace. That is, the resin in the phosphor paste is removed.
- the phosphor layer 15 is formed by the above steps.
- a screen printing method or the like can be used.
- the back plate 10 having predetermined constituent members on the back glass substrate 11 is completed.
- Frit application process B2 Next, the glass frit which is a sealing member is apply
- the sealing member is preferably a frit mainly composed of bismuth oxide or vanadium oxide.
- the frit mainly composed of bismuth oxide include a Bi 2 O 3 —B 2 O 3 —RO—MO system (where R is any one of Ba, Sr, Ca and Mg, and M is Any of Cu, Sb, and Fe)) and a filler made of an oxide such as Al 2 O 3 , SiO 2 , and cordierite can be used.
- a frit containing vanadium oxide as a main component for example, a filler made of an oxide such as Al 2 O 3 , SiO 2 , cordierite or the like is added to a V 2 O 5 —BaO—TeO—WO glass material. Things can be used.
- the sealing process C1, the reducing gas introduction process C2, the exhaust process C3, and the discharge gas supply process C4 perform the processing of the temperature profile shown in FIG. 6, FIG. 7, or FIG. 8 in the same apparatus. .
- the sealing temperature in FIGS. 6 to 8 is a temperature at which the front plate 2 and the back plate 10 are sealed by a frit that is a sealing member.
- the sealing temperature in the present embodiment is about 490 ° C., for example.
- the exhaust temperature in FIGS. 6 to 8 is the temperature at which the gas containing the reducing organic gas is exhausted from the discharge space.
- the exhaust temperature in the present embodiment is about 400 ° C., for example.
- the temperature is maintained at the exhaust temperature for the period cd.
- a gas containing a reducing organic gas is introduced into the discharge space during the period cd.
- the protective layer 9 is exposed to a gas containing a reducing organic gas.
- the temperature is maintained at the exhaust temperature for a predetermined period. Thereafter, the temperature drops to about room temperature. During the period d-e, the discharge space is exhausted, so that a gas containing a reducing organic gas is exhausted.
- a discharge gas is introduced into the discharge space. That is, the discharge gas is introduced in a period after e when the temperature drops to about room temperature.
- the temperature is maintained at the exhaust temperature for the period d1-d2.
- a gas containing a reducing organic gas is introduced into the discharge space during the period d1-d2.
- the protective layer 9 is exposed to a gas containing a reducing organic gas during the period d1-d2.
- the temperature is maintained at the exhaust temperature for a predetermined period. Thereafter, the temperature drops to about room temperature. During the period d2-e, the discharge space is exhausted, so that a gas containing a reducing organic gas is exhausted.
- a discharge gas is introduced into the discharge space. That is, the discharge gas is introduced in a period after e when the temperature drops to about room temperature.
- the reducing gas introduction step C2 is performed within the period of the sealing step C1.
- the temperature is maintained at the sealing temperature for the period b1-b2. Thereafter, during the period b2-c, the temperature falls to the exhaust temperature.
- a gas containing a reducing organic gas is introduced into the discharge space.
- the protective layer 9 is exposed to a gas containing a reducing organic gas.
- the temperature is maintained at the exhaust temperature for a predetermined period. Thereafter, the temperature drops to about room temperature. During the period ce, the gas including the reducing organic gas is discharged by exhausting the discharge space.
- a discharge gas is introduced into the discharge space. That is, the discharge gas is introduced in a period after e when the temperature drops to about room temperature.
- the reducing organic gas is preferably a CH-based organic gas having a molecular weight of 58 or less and a large reducing power.
- a gas containing the reducing organic gas is produced.
- column C means the number of carbon atoms contained in one molecule of organic gas.
- the column of H means the number of hydrogen atoms contained in one molecule of the organic gas.
- “A” is attached to a gas having a vapor pressure of 100 kPa or more at 0 ° C. in the vapor pressure column. Furthermore, “C” is given to the gas whose vapor pressure at 0 ° C. is smaller than 100 kPa.
- a gas having a boiling point of 0 ° C. or less at 1 atm is marked with “A”. Furthermore, “C” is attached to a gas having a boiling point of greater than 0 ° C. at 1 atmosphere.
- “A” is given to the gas that is easily decomposed.
- “B” is attached to a gas that is easily decomposed.
- “A” is given to the gas having sufficient reducing power.
- a reducing organic gas that can be supplied in a gas cylinder is desirable. Also, considering the ease of handling in the manufacturing process of PDP, a reducing organic gas having a vapor pressure at 0 ° C. of 100 kPa or higher, a reducing organic gas having a boiling point of 0 ° C. or lower, or a reducing organic gas having a low molecular weight is desirable.
- part of the gas containing the reducing organic gas may remain in the discharge space even after the exhaust process C3. Therefore, it is desirable that the reducing organic gas has a characteristic that it is easily decomposed.
- Reducing organic gas is a carbon that does not contain oxygen selected from acetylene, ethylene, methylacetylene, propadiene, propylene and cyclopropane, taking into consideration the ease of handling in the manufacturing process and the property of being easily decomposed. Hydrogen gas is desirable. At least one selected from these reducing organic gases may be mixed with a rare gas or nitrogen gas.
- the sustain voltage could be reduced by about 10V.
- the acetylene gas having a chemical formula of C 2 H 2 is used, the sustain voltage can be reduced by about 20V.
- the lower limit of the mixing ratio of the rare gas or nitrogen gas and the reducing organic gas is determined according to the combustion ratio of the reducing organic gas used.
- the upper limit is about several volume%. If the mixing ratio of the reducing organic gas is too high, the organic component is likely to be polymerized to become a polymer. In this case, the polymer remains in the discharge space and affects the characteristics of the PDP. Therefore, it is preferable to appropriately adjust the mixing ratio according to the component of the reducing organic gas to be used.
- the protective layer 9 includes a base film 91 that is a base layer and aggregated particles 92 as an example.
- the base film 91 may be formed of a metal oxide made of at least two oxides selected from MgO, calcium oxide (CaO), strontium oxide (SrO), and barium oxide (BaO). These metal oxides have a peak between the minimum diffraction angle and the maximum diffraction angle generated from a single oxide constituting the metal oxide having a specific orientation plane in the X-ray diffraction analysis of the surface of the base film 91. .
- the agglomerated particles 92 are obtained by aggregating a plurality of MgO crystal particles 92a which are metal oxides.
- the agglomerated particles 92 are preferably distributed uniformly over the entire surface of the base film 91. This is because the variation of the discharge voltage in the PDP 1 is reduced.
- the MgO crystal particles 92a can be manufactured by either a gas phase synthesis method or a precursor firing method.
- a gas phase synthesis method first, a metal magnesium material having a purity of 99.9% or more is heated in an atmosphere filled with an inert gas. Furthermore, metallic magnesium is directly oxidized by introducing a small amount of oxygen into the atmosphere. In this manner, MgO crystal particles 92a are produced.
- the MgO precursor is uniformly fired at a high temperature of 700 ° C. or higher.
- MgO crystal particles 92a are produced.
- the precursor include magnesium alkoxide (Mg (OR) 2 ), magnesium acetylacetone (Mg (acac) 2 ), magnesium hydroxide (Mg (OH) 2 ), magnesium carbonate (MgCO 2 ), magnesium chloride (MgCl 2 ). ), Magnesium sulfate (MgSO 4 ), magnesium nitrate (Mg (NO 3 ) 2 ), or magnesium oxalate (MgC 2 O 4 ). Depending on the selected compound, it may usually take the form of a hydrate.
- Hydrate can also be used as a precursor.
- the compound as the precursor is adjusted so that the purity of magnesium oxide (MgO) obtained after firing is 99.95% or higher, desirably 99.98% or higher. If a certain amount of impurity elements such as various alkali metals, B, Si, Fe, and Al are mixed in the precursor compound, unnecessary interparticle adhesion and sintering occur during heat treatment. As a result, it becomes difficult to obtain highly crystalline MgO crystal particles. Therefore, it is preferable to prepare the precursor in advance, such as removing the impurity element from the compound.
- a dispersion is prepared by dispersing the MgO crystal particles 92a obtained by any of the above methods in a solvent. Next, the dispersion is applied to the surface of the base film 91 by spraying, screen printing, electrostatic coating, or the like. Thereafter, the solvent is removed through a drying / firing process. Through the above steps, the MgO crystal particles 92 a are fixed on the surface of the base film 91.
- the aggregated particles 92 are those in which crystal particles 92a having a predetermined primary particle size are aggregated or necked. In other words, it is not bonded as a solid with a large bonding force, but a plurality of primary particles form an aggregate body due to static electricity, van der Waals force, etc., and due to external stimuli such as ultrasound , Part or all of them are bonded to such a degree that they become primary particles.
- the particle size of the agglomerated particles 92 is about 1 ⁇ m, and the crystal particles 92a preferably have a polyhedral shape having seven or more surfaces such as a tetrahedron and a dodecahedron.
- the particle size of the primary particles of the crystal particles 92a can be controlled by the generation conditions of the crystal particles 92a.
- the particle size can be controlled by controlling the firing temperature or firing atmosphere.
- the firing temperature can be selected in the range of 700 ° C to 1500 ° C.
- the particle size can be controlled to about 0.3 to 2 ⁇ m.
- the aggregated particles 92 in which a plurality of MgO crystal particles are agglomerated mainly confirms the effect of suppressing the “discharge delay” in the write discharge and the effect of improving the temperature dependency of the “discharge delay”.
- the agglomerated particles 92 are excellent in the initial electron emission characteristics as compared with the base film 91. Therefore, in the present embodiment, the agglomerated particles 92 are arranged as an initial electron supply unit required at the time of discharge pulse rising.
- the “discharge delay” is considered to be mainly caused by a shortage of the amount of initial electrons that are triggered from the surface of the base film 91 being discharged into the discharge space 16 at the start of discharge. Therefore, in order to contribute to the stable supply of initial electrons to the discharge space 16, the agglomerated particles 92 are dispersedly arranged on the surface of the base film 91. As a result, abundant electrons are present in the discharge space 16 at the rise of the discharge pulse, and the discharge delay can be eliminated. Therefore, such initial electron emission characteristics enable high-speed driving with good discharge response even when the PDP 1 has a high definition.
- the metal oxide aggregated particles 92 are disposed on the surface of the base film 91, in addition to the effect of mainly suppressing the “discharge delay” in the write discharge, the effect of improving the temperature dependency of the “discharge delay” is also achieved. can get.
- Prototype 1 is a PDP in which only a protective layer made of MgO is formed.
- Prototype 2 is a PDP in which a protective layer made of MgO doped with impurities such as Al and Si is formed.
- Prototype 3 is a PDP in which primary particles of MgO crystal particles are dispersed and arranged on a base film made of MgO.
- the prototype 4 is a PDP in which agglomerated particles 92 in which a plurality of MgO crystal particles 92 a are aggregated are uniformly distributed over the entire surface of a base film made of MgO.
- the PDPs in the prototypes 1 to 4 were manufactured by the above-described manufacturing method.
- the first temperature profile was used for introducing and exhausting the reducing organic gas. Therefore, the difference between the prototypes 1 to 4 is only the structure of the protective layer 9.
- the sustain voltage of prototype 1 to prototype 4 was 10V to 20V lower than the sustain voltage of the conventional PDP.
- FIG. 10 shows the electron emission performance and charge retention performance of the protective layer.
- the electron emission performance is a numerical value indicating that the larger the electron emission performance, the larger the electron emission amount.
- the electron emission performance is expressed as the initial electron emission amount determined by the surface state of the discharge, the gas type and the state.
- the initial electron emission amount can be measured by a method of measuring the amount of electron current emitted from the surface by irradiating the surface with ions or an electron beam. However, it is difficult to implement non-destructively. Therefore, the method described in JP 2007-48733 A was used. That is, among the delay times during discharge, a numerical value called a statistical delay time, which is a measure of the likelihood of occurrence of discharge, was measured.
- the delay time at the time of discharge is the time from the rise of the address discharge pulse until the address discharge is delayed. It is considered that the discharge delay is mainly caused by the fact that initial electrons that become a trigger when the address discharge is generated are not easily released from the surface of the protective layer into the discharge space.
- the charge retention performance is a voltage (hereinafter referred to as a Vscn lighting voltage) applied to the scan electrode necessary for suppressing a phenomenon in which charges are released from the protective layer in the PDP.
- a lower Vscn lighting voltage indicates a higher charge retention capability.
- the PDP can be driven at a low voltage. Therefore, it is possible to use components having a low withstand voltage and a small capacity as the power source and each electrical component.
- an element having a withstand voltage of about 150 V is used as a semiconductor switching element such as a MOSFET for sequentially applying a scanning voltage to a panel.
- the Vscn lighting voltage is preferably suppressed to 120 V or less in consideration of variation due to temperature.
- the electron emission capability and the charge retention capability of the protective layer are contradictory. It is possible to improve the electron emission performance by changing the film formation conditions of the protective layer, or by forming a film by doping the protective layer with impurities such as Al, Si, and Ba. However, as a side effect, the Vscn lighting voltage also increases.
- the electron emission capability of the protective layer of prototype 3 and prototype 4 is more than eight times that of prototype 1.
- the Vscn lighting voltage is 120 V or less. Therefore, the PDPs of the prototype 3 and the prototype 4 are more useful for a PDP in which the number of scanning lines is increased due to high definition and the cell size is small. That is, the PDPs of the prototype 3 and the prototype 4 can realize a good image display at a lower voltage by satisfying both the electron emission capability and the charge retention capability.
- the method for manufacturing PDP 1 disclosed in the present embodiment includes the following steps.
- the protective layer 9 is exposed to the reducing organic gas by introducing a gas containing the reducing organic gas into the discharge space.
- reducing organic gas is discharged from the discharge space.
- the discharge gas is sealed in the discharge space.
- Oxygen deficiency occurs in the protective layer 9 exposed to the reducing organic gas. Oxygen deficiency is considered to improve the secondary electron emission ability of the protective layer. Therefore, PDP 1 manufactured by the manufacturing method according to the present embodiment can reduce the sustain voltage.
- the reducing organic gas is preferably a hydrocarbon-based gas that does not contain oxygen. This is because the reduction ability is enhanced by not containing oxygen.
- the reducing organic gas is preferably at least one selected from acetylene, ethylene, methylacetylene, propadiene, propylene, cyclopropane, propane and butane. This is because the reducing organic gas is easy to handle in the manufacturing process. Furthermore, it is because said reducing organic gas is easy to decompose
- a manufacturing method in which a gas containing a reducing organic gas is introduced into the discharge space after exhausting the discharge space is exemplified.
- the gas containing the reducing organic gas can be introduced into the discharge space by continuously supplying the gas containing the reducing organic gas to the discharge space without exhausting the discharge space.
- the protective layer 9 may include a base film 91 that is a base layer formed on the dielectric layer 8, and a plurality of metal oxide crystal particles 92 a dispersed in the base film 91.
- the protective layer 9 includes a base film 91 that is a base layer formed on the dielectric layer 8 and a plurality of particles dispersedly arranged on the base film 91, and the particles are crystals of a plurality of metal oxides. Aggregated particles 92 in which the particles 92a are aggregated may be used.
- the protective layer 9 includes the metal oxide crystal particles 92 a or the aggregated particles 92 in which a plurality of metal oxide crystal particles 92 a are aggregated on the base film 91, the protective layer 9 has a high charge retention capability and a high electron emission capability. Therefore, as a whole PDP 1, high-speed driving can be realized with a low voltage even with a high-definition PDP. In addition, high-quality image display performance with reduced lighting failure can be realized.
- an MgO film is taken as an example of the base layer.
- the performance required for the underlayer is to have high spatter resistance for protecting the dielectric from ion bombardment. That is, high charge retention capability and electron emission performance may not be high.
- a protective layer composed mainly of MgO is very often formed in order to achieve both the electron emission performance above a certain level and the sputter resistance.
- the underlying film does not need to be MgO at all.
- Other materials having excellent impact resistance such as Al 2 O 3 may be used for the base film.
- MgO is exemplified as the metal oxide crystal particles.
- the metal oxide crystal particles are not limited to MgO.
- the technology disclosed in the present embodiment is useful for realizing a PDP having high image quality display performance and low power consumption.
Abstract
Description
PDPの基本構造は、一般的な交流面放電型PDPである。図1に示すように、PDP1は前面ガラス基板3などよりなる前面板2と、背面ガラス基板11などよりなる背面板10とが対向して配置されている。前面板2と背面板10とは、外周部がガラスフリットなどからなる封着材によって気密封着されている。封着されたPDP1内部の放電空間16には、ネオン(Ne)およびキセノン(Xe)などの放電ガスが53kPa(400Torr)~80kPa(600Torr)の圧力で封入されている。
図3に示すように、プラズマディスプレイ装置は、PDP1、画像信号処理回路21、データ電極駆動回路22、走査電極駆動回路23、維持電極駆動回路24、タイミング発生回路25および電源回路(図示せず)を備えている。
図4に示すように、プラズマディスプレイ装置は、1フィールドを複数のサブフィールドにより構成する。サブフィールドは、初期化期間と、書込み期間と、維持期間とを有する。初期化期間は放電セルにおいて初期化放電を発生させる期間である。書込み期間は、初期化期間のあと、発光させる放電セルを選択する書込み放電を発生させる期間である。維持期間は、書込み期間において選択された放電セルに維持放電を発生させる期間である。
第1サブフィールドの初期化期間では、データ電極D1~Dmおよび維持電極SU1~SUnが0(V)に保持される。また、走査電極SC1~SCnに対して放電開始電圧以下となる電圧Vi1(V)から放電開始電圧を超える電圧Vi2(V)に向かって緩やかに上昇するランプ電圧が印加される。すると、全ての放電セルにおいて1回目の微弱な初期化放電が発生する。初期化放電によって、走査電極SC1~SCn上に負の壁電圧が蓄えられる。維持電極SU1~SUn上およびデータ電極D1~Dm上に正の壁電圧が蓄えられる。壁電圧とは保護層9や蛍光体層15上などに蓄積した壁電荷により生じる電圧である。
続く書込み期間では、走査電極SC1~SCnは、一旦Vc(V)に保持される。維持電極SU1~SUnがVe2(V)に保持される。次に、1行目の走査電極SC1に負の走査パルス電圧Va(V)が印加されるとともに、データ電極D1~Dmのうち1行目に表示すべき放電セルのデータ電極Dk(k=1~m)に正の書込みパルス電圧Vd(V)が印加される。このときデータ電極Dkと走査電極SC1との交差部の電圧は、外部印加電圧(Vd-Va)(V)にデータ電極Dk上の壁電圧と走査電極SC1上の壁電圧とが加算されたものとなり、放電開始電圧を超える。そして、データ電極Dkと走査電極SC1との間および維持電極SU1と走査電極SC1との間に書込み放電が発生する。書込み放電が発生した放電セルの走査電極SC1上には正の壁電圧が蓄積される。書込み放電が発生した放電セルの維持電極SU1上には負の壁電圧が蓄積される。書込み放電が発生した放電セルのデータ電極Dk上には負の壁電圧が蓄積される。
続く維持期間では、走査電極SC1~SCnには第1の電圧として正の維持パルス電圧Vs(V)が印加される。維持電極SU1~SUnには第2の電圧として接地電位、すなわち0(V)が印加される。このとき書込み放電が発生した放電セルにおいては、走査電極SCi上と維持電極SUi上との間の電圧は維持パルス電圧Vs(V)に走査電極SCi上の壁電圧と維持電極SUi上の壁電圧とが加算されたものとなり、放電開始電圧を超える。そして、走査電極SCiと維持電極SUiとの間に維持放電が発生する。維持放電により発生した紫外線により蛍光体層が励起されて発光する。そして走査電極SCi上に負の壁電圧が蓄積される。維持電極SUi上に正の壁電圧が蓄積される。データ電極Dk上には正の壁電圧が蓄積される。
続く第2サブフィールド以降における初期化期間、書込み期間、維持期間の動作も、第1サブフィールドにおける動作とほぼ同様である。よって、詳細な説明は省略される。なお、第2サブフィールド以降のサブフィールドにおいては、維持電極SU1~SUnが正の電圧Ve1(V)に保たれる。走査電極SC1~SCnには、電圧Vi3(V)から電圧Vi4(V)に向かって緩やかに下降するランプ電圧が印加される。すると、前のサブフィールドにおいて維持放電が発生した放電セルにおいてのみ微弱な初期化放電を発生させることができる。すなわち、第1サブフィールドにおいては、全ての放電セルで初期化放電を発生させる全セル初期化動作が行われる。第2サブフィールド以降においては、前のサブフィールドにおいて維持放電を起こした放電セルのみで選択的に初期化放電を発生させる選択初期化動作が行われる。なお、全セル初期化動作と選択初期化動作について、本実施の形態では、第1サブフィールドとその他のサブフィールドとの間で使い分けわれる。しかし、全セル初期化動作が第1サブフィールド以外のサブフィールドにおける初期化期間で行われてもよい。さらに、全セル初期化動作が、数フィールドに1回の頻度で行われてもよい。
図5に示すように、本実施の形態に係るPDP1の製造方法は、前面板作製工程A1、背面板作製工程B1、フリット塗布工程B2、封着工程C1、還元性ガス導入工程C2、排気工程C3および放電ガス供給工程C4を有する。
前面板作製工程A1においては、フォトリソグラフィ法によって、前面ガラス基板3上に、走査電極4および維持電極5とブラックストライプ7とが形成される。走査電極4および維持電極5は、導電性を確保するための銀(Ag)を含む金属バス電極4b、5bを有する。また、走査電極4および維持電極5は、透明電極4a、5aを有する。金属バス電極4bは、透明電極4aに積層される。金属バス電極5bは、透明電極5aに積層される。
まず、フォトリソグラフィ法によって、背面ガラス基板11上に、データ電極12が形成される。データ電極12の材料には、導電性を確保するための銀(Ag)と銀を結着させるためのガラスフリットと感光性樹脂と溶剤などを含むデータ電極ペーストが用いられる。まず、スクリーン印刷法などによって、データ電極ペーストが所定の厚みで背面ガラス基板11上に塗布される。次に、乾燥炉によって、データ電極ペースト中の溶剤が除去される。次に、所定のパターンのフォトマスクを介して、データ電極ペーストが露光される。次に、データ電極ペーストが現像され、データ電極パターンが形成される。最後に、焼成炉によって、データ電極パターンが所定の温度で焼成される。つまり、データ電極パターン中の感光性樹脂が除去される。また、データ電極パターン中のガラスフリットが溶融する。溶融していたガラスフリットは、焼成後にガラス化する。以上の工程によって、データ電極12が形成される。ここで、データ電極ペーストをスクリーン印刷する方法以外にも、スパッタ法、蒸着法などを用いることができる。
次に、背面板作製工程B1により作製した背面板10の画像表示領域外に封着部材であるガラスフリットを塗布する。その後、ガラスフリットの樹脂成分等を除去するために350℃程度の温度で仮焼成するフリット塗布工程B2を行う。
次に、前面板2とフリット塗布工程B1を経た背面板10とが対向配置されて周辺部が封着部材により封着される。その後、放電空間に放電ガスが封入される。
図6に示すように、まず、封着工程C1において、温度は、室温から封着温度まで上昇する。次に、温度は、a-bの期間、封着温度に維持される。その後、温度は、b-cの期間に封着温度から排気温度に下降する。b-cの期間において、放電空間内が排気される。つまり、放電空間内は減圧状態になる。
図7に示すように、まず、封着工程C1において、温度は、室温から封着温度まで上昇する。次に、温度は、a-bの期間、封着温度に維持される。その後、温度はb-cの期間に封着温度から排気温度に下降する。温度が排気温度に維持されているc-d1の期間において、放電空間内が排気される。つまり、放電空間内は減圧状態になる。
図8に示すように、まず、封着工程C1において、温度は、室温から封着温度まで上昇する。次に、温度は、a-b1-b2の期間、封着温度に維持される。a-b1の期間に放電空間内が排気される。つまり、放電空間内は減圧状態になる。その後、温度はb2-cの期間に封着温度から排気温度に下降する。
表1に示すように、還元性有機ガスとしては、分子量が58以下の還元力の大きいCH系有機ガスが望ましい。種々の還元性有機ガスの中から選ばれる少なくとも一つが希ガスや窒素ガスなどに混合されることにより、還元性有機ガスを含むガスが製造される。
図9に示すように、保護層9は、一例として、下地層である下地膜91と凝集粒子92とを含む。下地膜91は、MgO、酸化カルシウム(CaO)、酸化ストロンチウム(SrO)、及び酸化バリウム(BaO)から選ばれる少なくとも2つ以上の酸化物からなる金属酸化物により形成してもよい。これらの金属酸化物は、下地膜91面のX線回折分析において、特定方位面の金属酸化物を構成する酸化物の単体より発生する最小回折角と最大回折角との間にピークが存在する。
凝集粒子92とは、所定の一次粒径の結晶粒子92aが凝集またはネッキングした状態のものである。すなわち、固体として大きな結合力を持って結合しているのではなく、静電気やファンデルワールス力などによって複数の一次粒子が集合体の体をなしているもので、超音波などの外的刺激により、その一部または全部が一次粒子の状態になる程度で結合しているものである。凝集粒子92の粒径としては、約1μm程度のもので、結晶粒子92aとしては、14面体や12面体などの7面以上の面を持つ多面体形状を有するのが望ましい。
次に、本実施の形態に係る保護層9の特性を確認するために行った実験結果が説明される。試作品1は、MgOによる保護層のみを形成したPDPである。試作品2は、Al,Siなどの不純物をドープしたMgOによる保護層を形成したPDPである。試作品3は、MgOによる下地膜上にMgOの結晶粒子の一次粒子を分散配置させたPDPである。試作品4は、MgOによる下地膜上に、MgOの結晶粒子92aが複数凝集した凝集粒子92を全面に亘って均一に分散配置させたPDPである。なお、試作品1~試作品4におけるPDPは、上述の製造方法によって製造された。特に、還元性有機ガスの導入および排気については、第1の温度プロファイルが用いられた。したがって、試作品1~試作品4の違いは、保護層9の構造のみである。試作品1~試作品4の維持電圧は、従来のPDPの維持電圧より10V~20V低かった。
本実施の形態に開示されたPDP1の製造方法は、以下の工程を備える。還元性有機ガスを含むガスを放電空間に導入することにより、保護層9を還元性有機ガスに曝す。次に、還元性有機ガスを放電空間から排出する。次に、放電ガスを放電空間に封入する。
2 前面板
3 前面ガラス基板
4 走査電極
4a,5a 透明電極
4b,5b 金属バス電極
5 維持電極
6 表示電極
7 ブラックストライプ
8 誘電体層
9 保護層
10 背面板
11 背面ガラス基板
12 データ電極
13 下地誘電体層
14 隔壁
15 蛍光体層
16 放電空間
21 画像信号処理回路
22 データ電極駆動回路
23 走査電極駆動回路
24 維持電極駆動回路
25 タイミング発生回路
91 下地膜
92 凝集粒子
92a 結晶粒子
Claims (3)
- 放電空間と前記放電空間に面する保護層とを有するプラズマディスプレイパネルの製造方法であって、
還元性有機ガスを含むガスを前記放電空間に導入することにより、前記保護層を前記還元性有機ガスに曝し、
次に、前記還元性有機ガスを前記放電空間から排出し、
次に、放電ガスを前記放電空間に封入する、
プラズマディスプレイパネルの製造方法。 - 前記還元性有機ガスは、酸素を含まない炭化水素系ガスである、
請求項1に記載のプラズマディスプレイパネルの製造方法。 - 前記還元性有機ガスは、アセチレン、エチレン、メチルアセチレン、プロパジエン、プロピレン、シクロプロパン、プロパンおよびブタンの中から選ばれる少なくとも一種である、
請求項2に記載のプラズマディスプレイパネルの製造方法。
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- 2011-02-08 JP JP2011553751A patent/JPWO2011099266A1/ja active Pending
- 2011-02-08 JP JP2011532454A patent/JP5158265B2/ja not_active Expired - Fee Related
- 2011-02-08 US US13/201,708 patent/US8283864B2/en not_active Expired - Fee Related
- 2011-02-08 WO PCT/JP2011/000678 patent/WO2011099266A1/ja active Application Filing
- 2011-02-08 US US13/320,678 patent/US20120064795A1/en not_active Abandoned
- 2011-02-08 KR KR1020117028886A patent/KR20120023053A/ko not_active Application Discontinuation
- 2011-02-08 KR KR1020117022989A patent/KR101218883B1/ko not_active IP Right Cessation
- 2011-02-08 CN CN2011800015586A patent/CN102365702A/zh active Pending
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- 2011-02-08 WO PCT/JP2011/000677 patent/WO2011099265A1/ja active Application Filing
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2013018351A1 (ja) * | 2011-08-03 | 2013-02-07 | パナソニック株式会社 | プラズマディスプレイパネルおよびその製造方法 |
WO2013018355A1 (ja) * | 2011-08-04 | 2013-02-07 | パナソニック株式会社 | プラズマディスプレイパネルおよびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102473567A (zh) | 2012-05-23 |
WO2011099265A1 (ja) | 2011-08-18 |
KR20120023053A (ko) | 2012-03-12 |
US20120064795A1 (en) | 2012-03-15 |
US8283864B2 (en) | 2012-10-09 |
KR101218883B1 (ko) | 2013-03-19 |
JPWO2011099266A1 (ja) | 2013-06-13 |
CN102365702A (zh) | 2012-02-29 |
KR20110123787A (ko) | 2011-11-15 |
US20110298364A1 (en) | 2011-12-08 |
JP5158265B2 (ja) | 2013-03-06 |
JPWO2011099265A1 (ja) | 2013-06-13 |
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