WO2011086685A1 - 電圧検知装置 - Google Patents
電圧検知装置 Download PDFInfo
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- WO2011086685A1 WO2011086685A1 PCT/JP2010/050410 JP2010050410W WO2011086685A1 WO 2011086685 A1 WO2011086685 A1 WO 2011086685A1 JP 2010050410 W JP2010050410 W JP 2010050410W WO 2011086685 A1 WO2011086685 A1 WO 2011086685A1
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- 238000001514 detection method Methods 0.000 title claims abstract description 78
- 239000003990 capacitor Substances 0.000 claims abstract description 91
- 239000004065 semiconductor Substances 0.000 claims description 25
- 230000005855 radiation Effects 0.000 abstract description 4
- 229910000679 solder Inorganic materials 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0084—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring voltage only
Definitions
- the present invention relates to a voltage detection device for detecting a terminal voltage of a power semiconductor element.
- This semiconductor power converter includes an insulated gate bipolar transistor (hereinafter referred to as an IGBT (Insulated Gate Bipolar Transistor)) as a power semiconductor element, a voltage dividing resistor for dividing the collector voltage of the IGBT, and the voltage dividing resistor. And a capacitor connected in parallel to the body.
- IGBT Insulated Gate Bipolar Transistor
- the collector voltage of the IGBT can be detected using a voltage dividing resistor and a capacitor connected in parallel to the voltage dividing resistor.
- a high voltage condition of about 600V to 900V DC it has been required to use such a semiconductor power conversion device under a high voltage condition of about 600V to 900V DC.
- the voltage dividing resistor for dividing the collector voltage should be a large one with a high wattage, Alternatively, it is necessary to connect a large number of resistors in series, and in any case, an increase in the size of the device cannot be avoided.
- the present invention has been made to solve such a problem, and is a voltage detection device capable of detecting the terminal voltage of a power semiconductor element without increasing the size of the device even under high voltage conditions.
- the purpose is to provide.
- a voltage detection apparatus is a voltage detection apparatus for detecting a voltage between a first terminal and a second terminal of a power semiconductor element, and is connected to the first terminal of the power semiconductor element.
- a power semiconductor based on a change in charge accumulated in the first capacitor and a detection electrode disposed in proximity to the electrode plate so as to form a first capacitor between the electrode plate and the electrode plate And a voltage detection circuit that detects a voltage between the first terminal and the second terminal of the element.
- This voltage detection device arranges a detection electrode close to an electrode plate connected to the first terminal of the power semiconductor element, and forms a first capacitor between the electrode plate and the detection electrode. Then, a voltage (hereinafter referred to as a terminal voltage) between the first terminal and the second terminal of the power semiconductor element is detected based on the change in the electric charge accumulated in the first capacitor. Therefore, the terminal voltage can be detected without providing a resistor for dividing the terminal voltage. Therefore, the enlargement of the apparatus can be avoided even under high voltage conditions.
- the voltage detection circuit is connected between an operational amplifier having an inverting input terminal connected to the first capacitor and a non-inverting input terminal connected to a predetermined voltage source, and the inverting input terminal and the output terminal of the operational amplifier. And a second capacitor.
- the amount of change in the charge accumulated in the first capacitor moves to the second capacitor connected between the inverting input terminal and the output terminal of the operational amplifier.
- the change in the charge accumulated in the first capacitor is reflected in the output voltage of the operational amplifier, so that the terminal voltage of the power semiconductor element can be detected from the output voltage of the operational amplifier.
- the voltage detection circuit includes a third capacitor connected to the first capacitor, a diode branched from between the first capacitor and the third capacitor, and connected in parallel to the third capacitor; And a fourth capacitor connected in series to the cathode of the diode on the downstream side of the diode.
- the third capacitor and the fourth capacitor are in parallel, and the terminal voltage is divided by the first capacitor, the third capacitor, and the fourth capacitor.
- the charge of the fourth capacitor is held by the diode provided upstream of the fourth capacitor.
- the terminal voltage when the terminal voltage is lowered, the terminal voltage is divided by the first capacitor and the third capacitor, so that the voltage dividing ratio with the first capacitor is smaller than when the terminal voltage is raised. . As a result, it is possible to accurately detect a change in the terminal voltage.
- the present invention it is possible to provide a voltage detection device capable of detecting the terminal voltage of a power semiconductor element without increasing the size of the device even under high voltage conditions.
- FIG. 1 It is a figure which shows the structure of the power module which concerns on this embodiment. It is a figure which shows the circuit structure of a voltage detection apparatus. It is a figure which shows the circuit structure of a voltage detection apparatus. It is a timing chart which shows operation
- FIG. 1 is a diagram illustrating a configuration of a power module using the voltage detection device according to the present embodiment.
- FIG. 1A is a schematic plan view of the power module.
- FIG. 1B is a schematic cross-sectional view along the line II in FIG.
- FIG. 1C is a schematic cross-sectional view along the line II-II in FIG.
- the mold resin M shown in FIGS. 1B and 1C is omitted.
- the power module 10 includes an IGBT 11 as a power semiconductor element.
- IGBT 11 As a power semiconductor element.
- at least a part of the back surface 11a serves as a collector (first terminal).
- a heat radiating plate (electrode plate) 13 is attached to the back surface 11 a of the IGBT 11 with solder 12.
- the heat sink 13 is made of a conductive material, and is electrically connected to the collector of the IGBT 11 via the solder 12.
- a power line lead frame 15 is attached to the heat sink 13 with solder 14. Therefore, the power line lead frame 15 is electrically connected to the collector of the IGBT 11 via the solder 14, the heat sink 13 and the solder 12.
- the power line lead frame 15 is formed in a wide flat plate shape for a withstand voltage design against a DC high voltage.
- a power line lead frame 17 is attached to the upper surface 11 b of the IGBT 11 with solder 16.
- the power line lead frame 17 is electrically connected to the emitter of the IGBT 11 via the solder 16.
- the power line lead frame 17 is formed in a wide flat plate shape for a withstand voltage design against a DC high voltage.
- a plurality (four in this case) of gate connection regions 18 for inputting control signals to the gate of the IGBT 11 are formed on the upper surface 11 b of the IGBT 11.
- a control signal line lead frame 20 is connected to each of the gate connection regions 18 via wires 19. Therefore, each of the control signal line lead frames 20 is electrically connected to the gate of the IGBT 11 via the wire 19 and the gate connection region 18.
- the power module 10 can apply a voltage between the collector and the emitter of the IGBT 11 using the power line lead frames 15 and 17 and controls the gate potential of the IGBT 11 using the control signal line lead frame 20.
- IGBT11 can be turned on and off.
- the power module 10 can be used as a semiconductor power converter, for example, by combining a plurality of power modules 10 to form an inverter circuit.
- the power module 10 includes a mold resin M formed so as to cover the IGBT 11, the heat radiating plate 13, and the like.
- the power module 10 further includes a detection lead frame 21.
- the detection lead frame 21 includes an electrode portion (detection electrode) 21a and a connection portion 21b.
- the electrode portion 21 a has a substantially rectangular flat plate shape and is disposed in the vicinity of the heat radiating plate 13. Therefore, the electrode portion 21 a and the heat sink 13 form a parallel plate capacitor (first capacitor) 22 connected to the collector of the IGBT 11.
- the capacitor 22 accumulates an amount of charge corresponding to a voltage (hereinafter referred to as a collector voltage) applied between the collector and emitter of the IGBT 11.
- a mold resin M is disposed between the heat radiating plate 13 and the electrode portion 21 a of the detection lead frame 21.
- the connecting portion 21b of the detection lead frame 21 extends from one end of the electrode portion 21a and is formed integrally with the electrode portion 21a.
- the connection portion 21b is used for connecting the capacitor 22 to a collector voltage detection circuit described later.
- the heat radiating plate 13, the detection lead frame 21, and the collector voltage detection circuit constitute a voltage detection device for detecting the collector voltage of the IGBT 11.
- FIG. 2 is a diagram schematically showing a circuit configuration of the voltage detection device according to the present embodiment.
- the voltage detection device 100 includes a capacitor 22 (the heat radiation plate 13 and the electrode portion 21 a of the detection lead frame 21) and a collector voltage detection circuit 30.
- the collector voltage detection circuit 30 is connected to the capacitor 22.
- the collector voltage detection circuit 30 is a circuit for detecting the collector voltage of the IGBT 11 based on a change in charge accumulated in the capacitor 22.
- the collector voltage detection circuit 30 outputs a detection voltage signal S1 indicating the detection result of the collector voltage of the IGBT 11 to the gate drive / control circuit 40 described later.
- the gate drive / control circuit 40 is connected to the gate G of the IGBT 11.
- the gate drive / control circuit 40 receives the detection voltage signal S1 from the collector voltage detection circuit 30, and also receives a control signal S2 for controlling the gate potential of the IGBT 11 from the outside. Then, the gate drive / control circuit 40 controls the gate potential of the IGBT 11 based on the detection voltage signal S1 and the control signal S2, thereby turning the IGBT 11 on and off.
- FIG. 2B is a circuit diagram showing a configuration of the collector voltage detection circuit 30.
- the collector voltage detection circuit 30 includes an operational amplifier 31, a voltage source 32, a capacitor (second capacitor) 33, and a switch 34.
- the inverting input terminal of the operational amplifier 31 is connected to the capacitor 22, and the non-inverting input terminal is connected to the voltage source 32.
- the capacitor 33 is connected between the inverting input terminal and the output terminal of the operational amplifier 31.
- the switch 34 is connected in parallel to the capacitor 33.
- the emitter E of the IGBT 11 is grounded together with the voltage source 32.
- the switch 34 is once turned ON. Thereby, the electric charge accumulated in the capacitor 33 is once reset. Then, the switch 34 is turned off. At this time, the voltage on the side not connected to the collector C of the capacitor 22 is fixed (virtual ground) to the voltage Vref of the voltage source 32 by the action of the operational amplifier 31. For this reason, when the IGBT 11 is subsequently turned ON or OFF and the collector voltage of the IGBT 11 changes, the charge accumulated in the capacitor 22 changes. This amount of change in charge moves to the capacitor 33 and is reflected in the output voltage of the operational amplifier 31. Therefore, according to the voltage detection device 100, the collector voltage of the IGBT 11 can be detected based on the output voltage of the operational amplifier 31.
- the voltage detection device 200 includes a capacitor 22 (the heat radiation plate 13 and the electrode portion 21 a of the detection lead frame 21) and a collector voltage detection circuit 50.
- the collector voltage detection circuit 50 is a circuit for detecting the collector voltage of the IGBT 11 based on a change in the charge accumulated in the capacitor 22.
- the collector voltage detection circuit 50 includes a capacitor (third capacitor) 51, a switch 52, a diode 53, a capacitor (fourth capacitor) 54, and a switch 55.
- the capacitor 51 is connected between the capacitor 22 and the ground.
- the diode 53 branches from between the capacitor 22 and the capacitor 51 and is connected in parallel to the capacitor 51.
- the capacitor 54 is connected in series to the cathode of the diode 53 on the downstream side of the diode 53.
- the switch 52 branches from between the capacitor 22 and the capacitor 51 and is connected to the capacitor 51 in parallel.
- the switch 55 branches from between the diode 53 and the capacitor 54 and is connected in parallel to the capacitor 54.
- FIG. 4 is referred to in addition to FIG. FIG. 4 is a timing chart showing a change in voltage accompanying switching of the IGBT 11.
- FIG. 4A shows the collector voltage.
- the broken line in FIG. 4B shows the voltage dividing point voltage V1, and the solid line shows the voltage dividing point voltage V2.
- FIG. 4C shows the switching timing of the IGBT 11.
- FIG.4 (d) has shown the voltage dividing point voltage in the voltage detection apparatus of a comparative example.
- the voltage detection device of this comparative example is different from the voltage detection device 200 in that the switches 52 and 55 and the diode 53 are not provided.
- the switches 52 and 54 are operated in the order of OFF, ON, and OFF. As a result, the charges accumulated in the capacitors 51 and 54 are reset. Thereafter, when the IGBT 11 is turned off, the collector voltage rises. At this time, if the system voltage is Vh and the surge voltage is Vs, the collector voltage rises to Vh + Vs.
- the voltage dividing point voltage V1 increases to C1 ⁇ (Vh + Vs) / (C1 + C2 + C3).
- C1, C2, and C3 are capacitance values of the capacitor 22, the capacitor 51, and the capacitor 54, respectively. Further, the voltage effect due to the diode 53 is not taken into consideration.
- the collector voltage decreases to the system voltage Vh and stabilizes.
- the voltage dividing point voltage V1 also changes (decreases).
- the change amount ⁇ V1 of the voltage dividing point voltage V1 becomes ⁇ C1 ⁇ Vs / (C1 + C2) because the electric charge of the capacitor 54 is stored by the effect of the diode 53.
- the amount of change in the voltage at the voltage dividing point in this comparative example is ⁇ C1 ⁇ Vs / (C1 + C2 + C3).
- the capacitor 51 and the capacitor 54 are in parallel, and the collector voltage is divided by the capacitor 22, the capacitor 51, and the capacitor 54. It will be. Further, when the collector voltage is lowered, the charge of the capacitor 54 is held by the diode 53 provided upstream of the capacitor 54. Therefore, when the collector voltage is lowered, the collector voltage is divided by the capacitor 22 and the capacitor 51, so that the voltage dividing ratio with the capacitor 22 is smaller than when the collector voltage is raised. For this reason, compared with the voltage detection apparatus of the comparative example which is not provided with the diode 53, variation
- DELTA change_quantity
- the surge voltage Vs is increased as the voltage change of the divided point voltage V1 while keeping the voltage change range of the divided point voltage V1 within a desired range. Can be detected. Therefore, a change in collector voltage (surge voltage Vs) can be accurately detected.
- the collector voltage of the IGBT 11 is detected based on the change in the charge accumulated in the capacitor 22. be able to. Therefore, the collector voltage can be detected without providing a resistor for dividing the collector voltage. Therefore, the enlargement of the apparatus can be avoided even under high voltage conditions.
- the voltage detection apparatus 100 according to the first embodiment and the voltage detection apparatus 200 according to the second embodiment use the capacitor 22 formed using the heat sink 13 of the power module 10, the collector voltage is detected. There is no need to provide a separate capacitor.
- the IGBT is exemplified as the power semiconductor element.
- the power semiconductor element is not limited to this, and may be a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor), for example.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Conversion In General (AREA)
- Measurement Of Current Or Voltage (AREA)
Abstract
Description
図1は、本実施形態に係る電圧検知装置を用いたパワーモジュールの構成を示す図である。図1(a)は、このパワーモジュールの概略的な平面図である。図1(b)は、図1(a)のI-I線に沿っての概略断面図である。図1(c)は、図1(a)のII-II線に沿っての概略断面図である。なお、図1(a)においては、図1(b),(c)に示されるモールド樹脂Mが省略されている。
続いて、図3を参照して、電圧検知装置の第2実施形態について説明する。この電圧検知装置も、第1実施形態に係る電圧検知装置100と同様に、パワーモジュール10に適用される。電圧検知装置200は、図3に示されように、コンデンサ22(放熱板13及び検知用リードフレーム21の電極部分21a)とコレクタ電圧検知回路50とを備えている。コレクタ電圧検知回路50は、コレクタ電圧検知回路30と同様に、コンデンサ22に蓄積された電荷の変化に基づいて、IGBT11のコレクタ電圧を検知するための回路である。
Claims (3)
- パワー半導体素子の第1の端子と第2の端子との間の電圧を検知するための電圧検知装置であって、
前記パワー半導体素子の前記第1の端子に接続された電極板と、
前記電極板との間で第1のコンデンサを形成するように前記電極板に近接して配置された検知用電極と、
前記第1のコンデンサに蓄積された電荷の変化に基づいて前記パワー半導体素子の前記第1の端子と前記第2の端子との間の電圧を検知する電圧検知回路と、
を備えることを特徴とする電圧検知装置。 - 前記電圧検知回路は、反転入力端子が前記第1のコンデンサに接続されると共に非反転入力端子が所定の電圧源に接続されたオペアンプと、前記オペアンプの反転入力端子と出力端子との間に接続された第2のコンデンサと、を有する請求項1に記載の電圧検知装置。
- 前記電圧検知回路は、前記第1のコンデンサに接続された第3のコンデンサと、前記第1のコンデンサと前記第3のコンデンサとの間から分岐して前記第3のコンデンサに並列に接続されたダイオードと、前記ダイオードの下流側において前記ダイオードのカソードに直列に接続された第4のコンデンサと、を有する請求項1に記載の電圧検知装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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PCT/JP2010/050410 WO2011086685A1 (ja) | 2010-01-15 | 2010-01-15 | 電圧検知装置 |
US13/257,777 US20120268146A1 (en) | 2010-01-15 | 2010-01-15 | Voltage detector |
JP2011503262A JPWO2011086685A1 (ja) | 2010-01-15 | 2010-01-15 | 電圧検知装置 |
CN201080003044XA CN102725643A (zh) | 2010-01-15 | 2010-01-15 | 电压检测装置 |
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PCT/JP2010/050410 WO2011086685A1 (ja) | 2010-01-15 | 2010-01-15 | 電圧検知装置 |
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WO2011086685A1 true WO2011086685A1 (ja) | 2011-07-21 |
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PCT/JP2010/050410 WO2011086685A1 (ja) | 2010-01-15 | 2010-01-15 | 電圧検知装置 |
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US (1) | US20120268146A1 (ja) |
JP (1) | JPWO2011086685A1 (ja) |
CN (1) | CN102725643A (ja) |
WO (1) | WO2011086685A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017199949A1 (ja) * | 2016-05-20 | 2017-11-23 | 株式会社デンソー | スイッチング素子の駆動制御装置 |
JP2020202678A (ja) * | 2019-06-11 | 2020-12-17 | 株式会社デンソー | 電力変換器の駆動回路 |
Families Citing this family (5)
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JP5423951B2 (ja) * | 2009-02-23 | 2014-02-19 | 三菱電機株式会社 | 半導体装置 |
CN102929184B (zh) * | 2012-11-23 | 2015-01-07 | 杭州士兰微电子股份有限公司 | 微控制单元的电压检测装置 |
JP2017212870A (ja) * | 2016-05-20 | 2017-11-30 | 株式会社デンソー | スイッチング素子の駆動制御装置 |
JP6822907B2 (ja) * | 2017-06-26 | 2021-01-27 | 株式会社東芝 | 半導体装置、電力変換装置、駆動装置、車両、及び、昇降機 |
JP2020190491A (ja) * | 2019-05-22 | 2020-11-26 | 株式会社東芝 | ピークホールド回路及び電力変換器 |
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2010
- 2010-01-15 JP JP2011503262A patent/JPWO2011086685A1/ja active Pending
- 2010-01-15 WO PCT/JP2010/050410 patent/WO2011086685A1/ja active Application Filing
- 2010-01-15 CN CN201080003044XA patent/CN102725643A/zh active Pending
- 2010-01-15 US US13/257,777 patent/US20120268146A1/en not_active Abandoned
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JP2000324799A (ja) * | 1999-05-10 | 2000-11-24 | Meidensha Corp | 半導体電力変換器 |
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JP2004056980A (ja) * | 2002-07-24 | 2004-02-19 | Fuji Electric Holdings Co Ltd | 半導体スイッチング素子の電圧検出回路 |
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WO2017199949A1 (ja) * | 2016-05-20 | 2017-11-23 | 株式会社デンソー | スイッチング素子の駆動制御装置 |
JP2020202678A (ja) * | 2019-06-11 | 2020-12-17 | 株式会社デンソー | 電力変換器の駆動回路 |
WO2020250907A1 (ja) * | 2019-06-11 | 2020-12-17 | 株式会社デンソー | 電力変換器の駆動回路 |
JP7234817B2 (ja) | 2019-06-11 | 2023-03-08 | 株式会社デンソー | 電力変換器の駆動回路 |
Also Published As
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US20120268146A1 (en) | 2012-10-25 |
CN102725643A (zh) | 2012-10-10 |
JPWO2011086685A1 (ja) | 2013-05-16 |
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