WO2011074403A1 - Appareil et procédé de protection d'élément commutateur semi-conducteur de puissance - Google Patents

Appareil et procédé de protection d'élément commutateur semi-conducteur de puissance Download PDF

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Publication number
WO2011074403A1
WO2011074403A1 PCT/JP2010/071355 JP2010071355W WO2011074403A1 WO 2011074403 A1 WO2011074403 A1 WO 2011074403A1 JP 2010071355 W JP2010071355 W JP 2010071355W WO 2011074403 A1 WO2011074403 A1 WO 2011074403A1
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Prior art keywords
semiconductor switch
power semiconductor
switch element
power loss
power
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PCT/JP2010/071355
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English (en)
Japanese (ja)
Inventor
友啓 杉野
秀文 白濱
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株式会社日立製作所
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Priority to CN201080056700.2A priority Critical patent/CN102656763B/zh
Publication of WO2011074403A1 publication Critical patent/WO2011074403A1/fr

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection

Definitions

  • the present invention relates to a protection device and a protection method for a power semiconductor switch element.
  • an insulated gate bipolar transistor IGBT Insulated Gate Bipolar Transistor
  • MOSFET Insulated Gate Bipolar Transistor
  • a protection device is configured to prevent this.
  • the IGBT element Since the IGBT element is thermally destroyed due to a temperature rise due to a short-circuit current, as a short-circuit detection method, a value corresponding to a temperature rise of the IGBT element is detected from the short-circuit current, and the threshold immediately before the value causes the IGBT to be thermally destroyed. It is necessary to activate the protection according to the value.
  • Patent Document 2 there is a method in which an auxiliary IGBT for current sensing is separately prepared for the IGBT of the main circuit. In this method, the current capacity of the detecting element can be reduced, and a high-speed, high-breakdown-voltage diode is not necessary.
  • Patent Document 2 it is difficult to easily create a detection circuit by a method other than making an IGBT for current sensing in the same chip as the main circuit IGBT element in advance. is there.
  • the problem to be solved by the present invention is that a protection device for a power semiconductor switch element used at a high voltage is simple and has a low possibility of malfunction even if there is no semiconductor switch element for current sensing. It is to protect the semiconductor switch element from heat damage.
  • terminal voltage detection means using a resistance voltage dividing circuit provided between both terminals of the power semiconductor switch element, and the power loss during the ON state of the power semiconductor switch element is estimated from the output value of the terminal voltage detection means.
  • the power loss estimation means includes a buffer circuit that receives the output of the terminal voltage detection means and generates an output voltage proportional to the input signal.
  • the power loss estimation means includes an integration means for inputting an output of the terminal voltage detection means.
  • the power loss estimation means includes a square circuit that inputs an output of the terminal voltage detection means.
  • the power loss estimation means includes a first-order lag circuit for inputting an output of the terminal voltage detection means.
  • FIG. 5 is a relationship diagram of IGBT collector current and collector-emitter voltage. It is a relationship diagram of the power loss of IGBT and the collector-emitter voltage. It is the figure which carried out the linear approximation of the relationship between the power loss of IGBT, and the voltage between collector-emitters.
  • FIG. 2 is an internal configuration example diagram of an integrator 6 in FIG. 1. It is a block diagram of the short circuit protection detection circuit by Example 2 of this invention at the time of using IGBT as a power semiconductor switch element.
  • a voltage dividing circuit using a high resistance and a detecting resistor, and a voltage after the voltage dividing are input to an integrating circuit through a buffer amplifier, whereby the temperature of the power semiconductor switch element is obtained.
  • a simple circuit was used to detect the rise, that is, the power loss equivalent value.
  • FIG. 1 is a configuration diagram of a short-circuit protection detection circuit according to Embodiment 1 of the present invention when an IGBT is used as a power semiconductor switch element.
  • the power semiconductor switch element 1 is a high breakdown voltage insulated gate bipolar transistor (IGBT) of 1.2 [kV] or higher.
  • the voltage between the collector terminal and the emitter terminal of the IGBT 1 is divided using the high resistance 2 (hereinafter referred to as R2) and the detection resistors 3 and 4 (hereinafter referred to as R3 and R4), and the detection resistors R3 and R4 are divided.
  • the output value of the buffer amplifier 5 is input to an integrator 6 used as a temperature detector.
  • the integrator 6 integrates the information output from the buffer amplifier 5 and inputs it to the control circuit 7. In the control circuit 7, it is determined whether or not a short-circuit load state is present, and when it is determined that the short-circuit load state is present, the gate voltage of the IGBT 1 is narrowed down.
  • the voltage applied to R3 becomes excessive and may be damaged. For example, it clamps and protects to about 15 [V].
  • FIG. 2 is a relationship diagram between the collector current of the IGBT and the collector-emitter voltage.
  • the relationship between the IGBT collector current Ic and the collector-emitter voltage Vce can be considered as a proportional relationship having an intercept B / A.
  • FIG. 3 is a relationship diagram between the power loss of the IGBT and the collector-emitter voltage. From the equation (3), the relationship between the power loss W and the collector-emitter voltage Vce can be considered as a quadratic function as shown in the figure. .
  • FIG. 4 is a linear approximation of the relationship between the power loss of the IGBT and the collector-emitter voltage.
  • the buffer amplifier 5 is used for power loss detection according to Example 1 of the present invention, as shown in FIG.
  • the relationship between the power loss W and the collector-emitter voltage Vce is a linear approximation. In this case, the detection is performed with a safety factor in the detection range higher than the actual loss.
  • the power loss approximate value which is the output value of the buffer amplifier 5, is input to the integrator 6 as the temperature rise estimating means, whereby the time integral of the power loss can be obtained, which corresponds to the temperature rise of the power semiconductor switch element. The value can be detected.
  • the output of the integrator 6 corresponding to the temperature rise is compared with the heat rise threshold value corresponding to the load short-circuit detection set in advance by the control circuit 7, and the short-circuit state (the state immediately before the damage due to overheating) is obtained. To detect.
  • FIG. 5 is a diagram showing an internal configuration example of the integrator 6 in FIG.
  • the time until the short-circuit state detection threshold is exceeded depends on the product of the integrator capacitor 9 and the integrator resistor 10 set in the integrator 6 shown in the figure.
  • the integrator capacitor 9 and the integrator resistor 10 are appropriately combined without being dependent on the current capacity and the withstand voltage capacity by being lowered to a low voltage by the high resistance 2 and being detected through the buffer amplifier 5. Can be selected easily.
  • Short-circuit load detection time can be easily set according to the system. Of course, the high resistance R2 does not require a current capacity, and a reduction in size can be expected.
  • FIG. 6 is a configuration diagram of a short-circuit protection detection circuit according to the second embodiment of the present invention when an IGBT is used as the power semiconductor switch element.
  • the second embodiment is characterized by the internal configuration of the control circuit 7 in FIG. 1, and the other components are the same as those in FIG.
  • the control circuit 7 includes a short circuit determination unit 11 and a circuit that narrows down the gate voltage of the IGBT 1 based on the output of the short circuit determination unit 11.
  • the short circuit determination unit 11 detects the short circuit state of the IGBT 1 (the state immediately before the damage due to overheating), first, the potential at the series connection point of the two transistors at the left end in FIG. That is, the transistor 13 for turning off the IGBT 1 is turned on. At this time, the gradient of the decrease in the gate voltage of the IGBT 1 is determined by the turn-off switching circuit 12 and the gate resistors 14 and 15 connected thereto. In the turn-off switching circuit 12, the gate resistor 14 is normally used, and when the short circuit is determined, the gate resistor 15 is switched to a larger value than that in the normal state.
  • the voltage between the gate and the emitter is gradually decreased with a time constant larger than usual, and soft switching is performed.
  • the jump of the voltage between collector-emitters at the time of turn-off when a short circuit current flows is suppressed, and element destruction of IGBT1 is prevented.
  • the short-circuit determining unit 11 detects a short-circuit state, and the short-circuit is performed while gradually decreasing the voltage between the gate and the emitter of the IGBT 1 as described above by the turn-off transistor 13 and the turn-off switching circuit 12. After the current is reduced, if the collector current falls below the short-circuit detection threshold value and the short-circuit determination unit 11 determines that the short-circuit state is not present, the turn-on transistor 17 is turned on instead of the turn-off transistor 13, and the system To resume the operation.
  • FIG. 7 is a configuration diagram of the short circuit protection detection circuit according to the third embodiment of the present invention when an IGBT is used as the power semiconductor switching element.
  • a multiplier 18 is used in place of the buffer amplifier 5 as power loss detection means.
  • the power loss W can be detected with a value closer to the linear approximation by detecting the square of the collector-emitter voltage Vce. Therefore, by calculating the square of the collector-emitter voltage Vce input by the multiplier 18, it is possible to detect the power loss W on the higher voltage side as compared with the case of linear approximation.
  • FIG. 8 is a configuration diagram of a short-circuit protection detection circuit according to the fourth embodiment of the present invention when an IGBT is used as a power semiconductor switch element.
  • the first-order lag circuit 19 is used instead of the integrator as power loss (temperature rise) estimation means.
  • FIG. 9 is an equivalent circuit of IGBT heat. Considering heat radiation, the collector current Ic is used as the current source 20, and a capacitor 21 (C21) and a resistor 22 (R22) simulating heat radiation are used as shown in FIG. At this time, when there is no resistor R22, it is considered that the case where the so-called system does not radiate heat corresponds to the case where the integrator 6 is used.
  • FIG. 10 is a configuration diagram of a short-circuit protection detection circuit according to the fifth embodiment of the present invention when an IGBT is used as a power semiconductor switch element.
  • arithmetic processing means hereinafter referred to as a microcomputer 23 is prepared in the control circuit 7, and the ambient temperature of the IGBT 1 is detected using the AD converter 24 in the microcomputer 23 and the temperature sensor 27 installed in the vicinity of the IGBT 1.
  • the short-circuit state is detected by comparing the output of the integrator 6 and the threshold value calculated by the CPU 25 inside the microcomputer by the comparator 26. Since the allowable heat amount of the IGBT 1 includes the ambient temperature, the ambient temperature obtained from the temperature detection value of the AD converter 24 is reflected in the threshold value calculated by the CPU 25, and thus linked to the ambient temperature. Short-circuit detection is possible.

Abstract

L'invention concerne un appareil de protection contre les courts-circuits pour des éléments commutateurs semi-conducteurs utilisés à haute tension, tels que les transistors bipolaires à porte isolée (IGBT). L'appareil de protection contre les courts-circuits détecte facilement un état de court-circuit, avec moins de possibilités de dysfonctionnement, même s'il n'existe pas d'élément commutateur détecteur de courant, et protège les éléments commutateurs semi-conducteurs contre une défaillance. L'appareil détecte, sous la forme d'informations de tension, le niveau d'un courant dans l'IGBT (1) dans lequel le courant est transporté, en fonction d'une tension divisée obtenue en divisant la tension sur le côté collecteur à l'aide d'une résistance élevée (2) et de résistances (3, 4) de détection, puis l'appareil estime la perte de puissance dans l'IGBT (1) en fonction de la valeur de tension et estime une valeur d'échauffement en fonction de la perte de puissance. Lorsque la valeur d'échauffement estimée dépasse une valeur prédéterminée, l'appareil réduit progressivement la tension d'un signal de grille et protège ainsi l'IGBT (1).
PCT/JP2010/071355 2009-12-17 2010-11-30 Appareil et procédé de protection d'élément commutateur semi-conducteur de puissance WO2011074403A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201080056700.2A CN102656763B (zh) 2009-12-17 2010-11-30 功率半导体开关元件的保护装置以及保护方法

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JP2009285935A JP2011130564A (ja) 2009-12-17 2009-12-17 パワー半導体スイッチ素子の保護装置および保護方法
JP2009-285935 2009-12-17

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2560283A1 (fr) * 2010-04-14 2013-02-20 Honda Motor Co., Ltd. Procédé de protection contre les courts-circuits
JP2014087095A (ja) * 2012-10-19 2014-05-12 Denso Corp 車両用回転電機
CN105474544A (zh) * 2013-10-03 2016-04-06 三菱重工汽车空调系统株式会社 负载驱动装置、车用空调装置以及负载短路保护电路
SE1951011A1 (en) * 2019-09-05 2021-03-06 Scania Cv Ab An electronic circuit breaker with self-triggering protection for a vehicle, and a method therefor

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5933311B2 (ja) * 2012-03-29 2016-06-08 東芝三菱電機産業システム株式会社 電力変換装置
CN103731137B (zh) * 2012-10-10 2017-03-29 上海得倍电子技术有限公司 低功耗的平方电路
JP6525141B2 (ja) * 2014-04-02 2019-06-05 富士電機株式会社 電圧駆動形パワー半導体素子のゲート駆動回路
JP6805496B2 (ja) 2016-01-15 2020-12-23 富士電機株式会社 半導体装置
JP6610468B2 (ja) * 2016-08-26 2019-11-27 株式会社デンソー 半導体装置
WO2021152734A1 (fr) * 2020-01-29 2021-08-05 三菱電機株式会社 Circuit de détection de surintensité et dispositif de conversion de puissance
JP7361675B2 (ja) 2020-11-30 2023-10-16 三菱電機株式会社 半導体装置
CN114582282B (zh) * 2022-03-30 2023-07-25 武汉华星光电半导体显示技术有限公司 Esd保护电路及显示装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04315202A (ja) * 1991-04-12 1992-11-06 Toyo Electric Mfg Co Ltd 等価外乱補償方法
JPH06209519A (ja) * 1993-01-08 1994-07-26 Honda Motor Co Ltd 過電流保護回路
JPH09182448A (ja) * 1995-12-22 1997-07-11 Okuma Mach Works Ltd インバータ制御装置の過電流保護回路
JP2004119842A (ja) * 2002-09-27 2004-04-15 Mitsubishi Electric Corp 電力用半導体素子の駆動回路
JP2004312907A (ja) * 2003-04-09 2004-11-04 Fuji Electric Fa Components & Systems Co Ltd 電力用半導体素子のゲート駆動回路
JP2004320418A (ja) * 2003-04-16 2004-11-11 Daihen Corp 高周波電源装置
JP2007159159A (ja) * 2002-07-12 2007-06-21 Yazaki Corp 半導体素子の保護装置
JP2009142146A (ja) * 2007-11-16 2009-06-25 Furukawa Electric Co Ltd:The 電源供給装置及び電源供給方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3932841B2 (ja) * 2001-08-29 2007-06-20 株式会社日立製作所 半導体電力変換装置
JP5057713B2 (ja) * 2006-07-03 2012-10-24 株式会社東芝 スイッチング素子駆動回路

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04315202A (ja) * 1991-04-12 1992-11-06 Toyo Electric Mfg Co Ltd 等価外乱補償方法
JPH06209519A (ja) * 1993-01-08 1994-07-26 Honda Motor Co Ltd 過電流保護回路
JPH09182448A (ja) * 1995-12-22 1997-07-11 Okuma Mach Works Ltd インバータ制御装置の過電流保護回路
JP2007159159A (ja) * 2002-07-12 2007-06-21 Yazaki Corp 半導体素子の保護装置
JP2004119842A (ja) * 2002-09-27 2004-04-15 Mitsubishi Electric Corp 電力用半導体素子の駆動回路
JP2004312907A (ja) * 2003-04-09 2004-11-04 Fuji Electric Fa Components & Systems Co Ltd 電力用半導体素子のゲート駆動回路
JP2004320418A (ja) * 2003-04-16 2004-11-11 Daihen Corp 高周波電源装置
JP2009142146A (ja) * 2007-11-16 2009-06-25 Furukawa Electric Co Ltd:The 電源供給装置及び電源供給方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2560283A1 (fr) * 2010-04-14 2013-02-20 Honda Motor Co., Ltd. Procédé de protection contre les courts-circuits
EP2560283A4 (fr) * 2010-04-14 2013-09-04 Honda Motor Co Ltd Procédé de protection contre les courts-circuits
JP2014087095A (ja) * 2012-10-19 2014-05-12 Denso Corp 車両用回転電機
CN105474544A (zh) * 2013-10-03 2016-04-06 三菱重工汽车空调系统株式会社 负载驱动装置、车用空调装置以及负载短路保护电路
CN105474544B (zh) * 2013-10-03 2018-09-28 三菱重工制冷空调系统株式会社 负载驱动装置、车用空调装置以及负载短路保护电路
SE1951011A1 (en) * 2019-09-05 2021-03-06 Scania Cv Ab An electronic circuit breaker with self-triggering protection for a vehicle, and a method therefor
WO2021045669A1 (fr) * 2019-09-05 2021-03-11 Scania Cv Ab Disjoncteur électronique doté d'une protection à déclenchement automatique pour un véhicule et procédé associé
SE544134C2 (en) * 2019-09-05 2022-01-11 Scania Cv Ab An electronic circuit breaker with self-triggering protection for a vehicle, and a method therefor

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CN102656763A (zh) 2012-09-05
CN102656763B (zh) 2015-04-08

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