WO2011058653A1 - 太陽電池セル - Google Patents
太陽電池セル Download PDFInfo
- Publication number
- WO2011058653A1 WO2011058653A1 PCT/JP2009/069387 JP2009069387W WO2011058653A1 WO 2011058653 A1 WO2011058653 A1 WO 2011058653A1 JP 2009069387 W JP2009069387 W JP 2009069387W WO 2011058653 A1 WO2011058653 A1 WO 2011058653A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- back surface
- semiconductor substrate
- pitch
- silicon substrate
- surface lead
- Prior art date
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- 239000000758 substrate Substances 0.000 claims abstract description 107
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 33
- 239000011295 pitch Substances 0.000 claims description 32
- 230000007423 decrease Effects 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 63
- 229910052710 silicon Inorganic materials 0.000 abstract description 63
- 239000010703 silicon Substances 0.000 abstract description 63
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 42
- 229910052709 silver Inorganic materials 0.000 abstract description 42
- 239000004332 silver Substances 0.000 abstract description 42
- 210000004027 cell Anatomy 0.000 description 56
- 239000003566 sealing material Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000004575 stone Substances 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 241000238366 Cephalopoda Species 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Definitions
- the present invention relates to a solar battery cell that includes a lead wire that is joined to an electrode and extracts an electrical output, and can reduce cell cracking after joining the lead wire.
- a lead wire made of a flat copper wire is joined to the solar battery cell for the purpose of extracting electric output.
- This lead wire contracts when it is cooled to room temperature from a high temperature state immediately after bonding.
- the shrinkage of the lead wire causes warpage or local deformation of the substrate, causing cracking of the solar battery cell.
- a lead junction electrode extending in a straight line is formed on the light receiving surface (front surface) of the semiconductor substrate constituting the solar battery cell for the purpose of joining the lead wires.
- lead bonding electrodes are formed in a dot shape (stepping stones) with a predetermined interval for the purpose of bonding lead wires. Then, the portion other than the dot-shaped lead bonding electrode on the back surface of the substrate is entirely an aluminum electrode.
- the lead bonding electrode may be provided continuously from the end to the end of the semiconductor substrate along the lead wire. However, since the strength of the boundary between the aluminum electrode and the lead bonding electrode is low, if a crack reaches any position of the lead bonding electrode, the crack spreads over the entire length of the semiconductor substrate along this boundary.
- the lead bonding electrodes are formed in the form of dots (stepping stones) at a predetermined interval as described above. Thereby, even if a crack occurs in any of the boundary portions, the crack does not spread to the adjacent lead bonding electrode (see, for example, Patent Document 1).
- the lead wire is the semiconductor. Since the shrinkage rate is larger than that of the substrate, the stress is applied so that the lead wire shortens the interval between the lead bonding electrodes formed on the solar battery cell surface.
- a light receiving surface lead wire is connected to the light receiving surface, and a back surface lead wire is connected to the back surface, and both lead wires exert stress to shrink the substrate surface, but the stress from the back surface lead wire is applied to the semiconductor substrate. Since it acts greatly, the semiconductor substrate warps so that the back side becomes concave.
- ⁇ Thin plates with different shrinkage rates are warped to one side when one thin plate shrinks.
- the warpage is gradually added from the center to the end (for example, like a piece of squid that has been heated) and is most greatly curved at the end of the flat plate. It has been clarified in the simulations and experiments by the inventors that the warp is greatest at the end of the semiconductor substrate. And since the curvature of this semiconductor substrate edge causes a cell crack, improvement was desired.
- the present invention has been made in view of the above, and an object of the present invention is to obtain a solar battery cell that can reduce the excessive deformation generated at the end of the semiconductor substrate and reduce the generation of cracks.
- a solar battery cell has a light-receiving surface lead junction electrode on a light-receiving surface side of a semiconductor substrate that receives sunlight and generates electric power.
- a solar cell having a back surface lead joining electrode on the back surface side of the light receiving surface, and connecting the light receiving surface lead wire and the back surface lead wire to the light receiving surface lead joining electrode and the back surface lead joining electrode, respectively, the power generated can be taken out. Is extended in a straight line to the back side of the semiconductor substrate, and a plurality of back surface lead bonding electrodes are formed in a dot shape on the straight line with a predetermined interval along the back surface lead wire. Is large at the center of the semiconductor substrate and small at the end of the semiconductor substrate.
- the back surface lead bonding electrodes are densely arranged at the end portion of the semiconductor substrate and the rigidity of the substrate is increased, so that the warpage of the end portion of the semiconductor substrate is reduced. Thereby, the crack of a semiconductor substrate is suppressed.
- FIG. 1 is a view seen from the back side of the solar battery cell according to Embodiment 1 of the present invention.
- FIG. 2 is a view seen from the light-receiving surface side of the solar battery cell according to Embodiment 1 of the present invention.
- FIG. 3 is a perspective view showing a state in which a plurality of solar cells are sequentially connected by a light receiving surface lead wire and a back surface lead wire.
- FIG. 4 is a perspective view showing a state where a solar cell array composed of solar cells sequentially connected by a light receiving surface lead wire and a back surface lead wire is sealed in a solar cell module.
- FIG. 5 is an exploded perspective view of the solar cell module of FIG. FIG.
- FIG. 6 is a view seen from the back side of a conventional solar battery cell shown for comparison.
- FIG. 7 is a view seen from the back side of the solar battery cell according to Embodiment 2 of the present invention.
- FIG. 8 is a view seen from the back side of the solar battery cell according to Embodiment 3 of the present invention.
- FIG. 9 is a view seen from the back side of the solar battery cell according to Embodiment 4 of the present invention.
- FIG. 10 is a graph showing a change in the pitch of the silver electrode according to the fourth embodiment of the present invention.
- a semiconductor substrate is described as a silicon substrate, a light receiving surface lead bonding electrode as a bus bar electrode, a lead wire as a tab wire, and a back surface lead bonding electrode as a silver electrode.
- the present invention is not limited to the embodiments.
- FIG. 1 is a view seen from the back side of the solar battery cell according to Embodiment 1 of the present invention.
- FIG. 2 is a view seen from the light-receiving surface side of the solar battery cell according to Embodiment 1 of the present invention.
- FIG. 3 is a perspective view showing a state in which a plurality of solar cells are sequentially connected by a light receiving surface lead wire and a back surface lead wire.
- FIG. 4 is a perspective view showing a state where a solar cell array composed of solar cells sequentially connected by a light receiving surface lead wire and a back surface lead wire is sealed in a solar cell module.
- FIG. 5 is an exploded perspective view of the solar cell module of FIG. 3 to 5 are perspective views in which the back surface of the silicon substrate is raised so that the relationship between the back surface lead bonding electrode and the back surface lead wire is well shown.
- the solar battery cell according to the present embodiment has a rectangular flat silicon substrate (semiconductor substrate) 1 having a side length of 140 mm to 160 mm.
- a plurality of dot-like silver electrodes (back surface lead bonding electrodes) 7 are provided in two rows with predetermined intervals.
- the silver electrodes 7 arranged in two rows are provided in a stepping stone shape at regular intervals on a straight line facing a bus bar electrode 3 described later.
- a back surface tab wire (back surface lead wire) 8 is joined to the upper surface of the silver electrode 7 over almost the entire length of the row.
- the width of the back surface tab line 8 is smaller than the width of the silver electrode 7.
- the feature of the present embodiment is the pitch of the silver electrodes 7 provided in a stepping stone shape, which will be described in detail later.
- the back surface tab wire 8 is a rectangular copper wire to which solder plating generally used as a lead wire for a solar cell is applied.
- a plurality of thin grid electrodes 2 that collect current from the entire cell surface while ensuring a light receiving area as much as possible are almost parallel over the entire width of the silicon substrate 1. It is arranged.
- Two bus bar electrodes (light-receiving surface lead bonding electrodes) 3 are provided on a straight line over almost the entire length of the silicon substrate 1 substantially orthogonal to the grid electrode 2.
- a light-receiving surface tab wire (light-receiving surface lead wire) 5 is joined over substantially the entire length of the upper surface of the bus bar electrode 3.
- the width of the light receiving surface side tab line 5 is the same as or slightly smaller than the bus bar electrode 3.
- the light-receiving surface tab line 5 has an extension 5a that protrudes outward from the cell surface in order to connect the silicon substrates 1 in series.
- the light-receiving surface tab wire 5 is a solder-plated rectangular copper wire generally used as a solar cell lead wire.
- the light-receiving surface tab line 5 and the back surface tab line 8 are separate members connected on the back surface side of the silicon substrate 1, but one continuous tab wire (lead wire). It may be.
- the extension 5 a of the light receiving surface tab line 5 that enters the back surface side of the adjacent silicon substrate 1 from the light receiving surface side is provided on the back surface side of the silicon substrate 1.
- the back surface tab lines 8 of the adjacent silicon substrates 1 are sequentially electrically connected in series. In this way, a predetermined number of silicon substrates 1 are connected to produce the solar cell array 17 (FIG. 5).
- the laminated body constituting the main part of the solar cell module 50 includes a light-transmitting substrate 11 made of a transparent material such as glass and a light-receiving surface made of a transparent resin from the light-receiving surface side.
- a light-transmitting substrate 11 made of a transparent material such as glass
- a light-receiving surface made of a transparent resin from the light-receiving surface side.
- Solar cell array in which side sealing material (first resin layer) 12, a plurality of silicon substrates 1 arranged in a grid pattern, and lead wires 5 and 8 that connect the plurality of silicon substrates 1 in series are wired 17, a back side sealing material (second resin layer) 15 made of a transparent resin, and a back sheet 16 excellent in weather resistance are laminated in this order.
- the light-receiving surface side sealing material 12 and the back surface side sealing material 15 are integrated by heat treatment, and the solar cell array 17 is resin-sealed to form a resin sealing layer.
- the solar cell module 50 is manufactured by covering the outer peripheral edge of the laminated body having such a configuration with a frame frame (not shown) over the entire circumference.
- silver electrodes 7 are formed on the back surface of the silicon substrate 1 along the back surface tab line 8 in the form of dots at predetermined intervals on a straight line.
- the silver electrode 7 provided at the end is formed so that the center position is at least 4 mm away from the end of the silicon substrate 1.
- the pitch of the silver electrodes 7 is large at the center portion of the silicon substrate 1 and is small at the end portion of the silicon substrate 1. That is, the silver electrodes 7 are densely arranged in a portion surrounded by a broken line in FIG. 1 of the silicon substrate 1.
- the silicon substrate 1 has higher rigidity in the portion where the silver electrode 7 exists than in the portion where the silver electrode 7 does not exist. Therefore, the warp of the silicon substrate 1 is reduced with respect to the same stress.
- FIG. 6 is a view seen from the back side of a conventional solar battery cell shown for comparison. As shown in FIG. 6, the pitch of the silver electrodes 57 of the conventional solar battery cell was equal. For this reason, the silicon substrate 1 is warped due to the difference in linear expansion coefficient between the silicon substrate 1 and the back surface tab wire 8, and the warpage also causes cell cracking of the silicon substrate 1.
- the solar battery cell according to the present embodiment has a bus bar electrode 3 on the light receiving surface side of the silicon substrate 1 that receives sunlight and generates electric power, and has a silver electrode 7 on the back surface side of the silicon substrate 1.
- the back surface tab line 8 extends linearly on the back surface side of the silicon substrate 1
- a plurality of silver electrodes 7 are formed in a dot shape along a back surface tab line 8 at a predetermined interval on a straight line, and the pitch of the silver electrodes 7 is large at the center of the silicon substrate 1. Small at the end of the. Therefore, the silver electrodes 7 are densely arranged at the end of the silicon substrate 1 and the rigidity of the substrate is increased, so that the warp of the end of the silicon substrate 1 is reduced. Thereby, the cell crack of the silicon substrate 1 is suppressed.
- the pitch of the silver electrodes 7 of the present embodiment is such that the pitch of the central portion of the silicon substrate 1 is A, the pitch of the end portions of the silicon substrate 1 is B, and the intermediate portion between the central portion and the end portions of the silicon substrate 1.
- Example The inventors confirmed the effect of the present embodiment through simulation and experiment. Using a silicon substrate having a thickness of 160 ⁇ m to 200 ⁇ m, the arrangement of the conventional silver electrode as shown in FIG. 6 and the arrangement of the silver electrode of the present embodiment are used at the end of the silicon substrate. The amount of warpage that occurred was observed.
- this embodiment has an effect of suppressing warpage with a silicon substrate having a thickness of 200 ⁇ m or less, and it is clear that the present embodiment is more effective particularly when the thickness is 160 ⁇ m or less. It was.
- silver electrodes 7 are formed in a dot shape with a predetermined interval on a straight line.
- the number is not limited to eight, and four or more silver electrodes 7 are in a dot shape. As long as it is formed, the configuration of this embodiment can be applied.
- FIG. FIG. 7 is a view seen from the back side of the solar battery cell according to Embodiment 2 of the present invention.
- seven silver electrodes 27 are provided for one row.
- a plurality of silver electrodes 27 are formed in a dot shape on the straight line with a predetermined interval along the back surface tab line 8, and the pitch of the silver electrodes 27 is silicon.
- the silver electrodes 27 are densely arranged at the end portion of the silicon substrate 1 and the rigidity of the substrate is increased, so that the warpage of the end portion of the silicon substrate 1 is reduced. Thereby, the cell crack of the silicon substrate 1 is suppressed.
- the number of silver electrodes is not increased, as is apparent from the comparison with the silver electrodes 57 of the conventional solar battery cell of FIG. Therefore, the cost is not improved compared to the conventional case.
- FIG. FIG. 8 is a view seen from the back side of the solar battery cell according to Embodiment 3 of the present invention.
- silver electrodes 37 with a small pitch are continuously provided for two pitches at the end of the silicon substrate 1.
- the silver electrodes 37 are more densely arranged at the end portion of the silicon substrate 1 and the rigidity of the substrate is further increased, so that the warpage of the end portion of the silicon substrate 1 is further reduced.
- FIG. 9 is a view seen from the back side of the solar battery cell according to Embodiment 4 of the present invention.
- FIG. 10 is a graph showing the change in the pitch of the silver electrodes of the present embodiment.
- the vertical axis indicates the pitch size
- the horizontal axis indicates the distance from the center along the back surface tab line to the end.
- the pitch of the silver electrodes 47 of the present embodiment is maximum at the center of the silicon substrate 1, gradually decreases toward the end, and at the end of the silicon substrate 1. It is the minimum.
- the warpage of the silicon substrate 1 caused by the difference in the linear expansion coefficient between the silicon substrate 1 and the back surface tab wire 8 is the smallest at the center and the largest at the end. Therefore, the silver electrode 47 is arranged as described above.
- the solar battery cell according to the present invention is suitable for being applied to a solar battery cell having a light-receiving surface lead-bonded electrode on the light-receiving surface and a back-surface lead-bonded electrode on the back surface.
- the bonding electrode is optimally applied to a solar battery cell formed in a dot shape with a predetermined interval.
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Abstract
Description
図1は、本発明の実施の形態1に係る太陽電池セルの裏面側から見た図である。図2は、本発明の実施の形態1に係る太陽電池セルの受光面側から見た図である。図3は、複数の太陽電池セルが受光面リード線及び裏面リード線により順次接続された様子を示す斜視図である。図4は、受光面リード線及び裏面リード線により順次接続された太陽電池セルでなる太陽電池アレイが太陽電池モジュール内に封止されている様子を示す斜視図である。図5は、図4の太陽電池モジュール分解斜視図である。なお、図3乃至5においては、裏面リード接合電極と裏面リード線との関係が良く示されるように、シリコン基板の裏面を上した斜視図としている。
発明者等は、シミュレーション及び実験で本実施の形態の効果を確認した。厚さが160μm~200μmのシリコン基板を用いて、図6に示すような従来の銀電極の配置としたものと、本実施の形態の銀電極の配置としたものとでシリコン基板の端部で発生する反りの大きさを観察した。
変形量(従来の変形量を100%とする)
厚さ160μm:86%
厚さ180μm:96%
厚さ200μm:95%
図7は、本発明の実施の形態2に係る太陽電池セルの裏面側から見た図である。本実施の形態においては、1列に対して7個の銀電極27が設けられている。銀電極27は、実施の形態1のものと同じように、裏面タブ線8に沿って複数個が直線上に所定の間隔を空けてドット状に形成されており、銀電極27のピッチがシリコン基板1の中央部で大きく、シリコン基板1の端部で小さい。そのため、シリコン基板1の端部で銀電極27の配置が密になり、基板の剛性が大きくなるので、シリコン基板1の端部の反りを減少させる。これにより、シリコン基板1のセル割れが抑制される。なお、図6の従来の太陽電池セルの銀電極57と比較して明らかなように、銀電極の数は増加していない。そのため、従来と較べてコストが向上することがない。
図8は、本発明の実施の形態3に係る太陽電池セルの裏面側から見た図である。本実施の形態においては、シリコン基板1の端部に小ピッチの銀電極37が2ピッチ分連続して設けられている。このような構成とすることにより、シリコン基板1の端部で銀電極37のさらに配置が密になり、基板の剛性がさらに大きくなるので、シリコン基板1の端部の反りがさらに減少する。
図9は、本発明の実施の形態4に係る太陽電池セルの裏面側から見た図である。図10は、本実施の形態の銀電極のピッチの変化を示すグラフの図である。図10において、縦軸はピッチの大きさ、横軸は裏面タブ線に沿う中心から端部に至る距離を示している。図9及び図10に示すように、本実施の形態の銀電極47のピッチは、シリコン基板1の中央部で最大であり、端部に向かって徐々に小さくなり、シリコン基板1の端部で最小となっている。
2 グリッド電極
3 バスバー電極(受光面リード接合電極)
5 受光面タブ線(受光面リード線)
5a 延長部
7,27,37,47 銀電極(裏面リード接合電極)
8 裏面タブ線(裏面リード線)
11 透光性基板
12 受光面側封止材
13 太陽電池セル
15 裏面側封止材
16 バックシート
50 太陽電池モジュール
Claims (6)
- 太陽光を受光して電力を発生する半導体基板の受光面側に受光面リード接合電極を有し、前記半導体基板の裏面側に裏面リード接合電極を有し、前記受光面リード接合電極および前記裏面リード接合電極にそれぞれ受光面リード線及び裏面リード線を接続されて発生した電力を取り出される太陽電池セルにおいて、
前記裏面リード線は前記半導体基板の裏面側に直線上に延び、
前記裏面リード接合電極は、前記裏面リード線に沿って複数個が直線上に所定の間隔を空けてドット状に形成されており、前記裏面リード接合電極のピッチが前記半導体基板の中央部で大きく、前記半導体基板の端部で小さい
ことを特徴とする太陽電池セル。 - 前記裏面リード接合電極のピッチは、前記半導体基板の中央部のピッチをA、前記半導体基板の端部のピッチをB、前記半導体基板の中央部と端部の間の中間部のピッチをCとしたとき、A≧C>Bである
ことを特徴とする請求項1に記載の太陽電池セル。 - 前記裏面リード接合電極のピッチは、A=Cで、且つA:B=2:1である
ことを特徴とする請求項2に記載の太陽電池セル。 - 前記裏面リード接合電極においては、前記半導体基板の端部に小ピッチの前記裏面リード接合電極が複数ピッチ分連続して設けられている
ことを特徴とする請求項2に記載の太陽電池セル。 - 前記裏面リード接合電極のピッチは、前記半導体基板の中央部で最大であり、端部に向かって徐々に小さくなり、前記半導体基板の端部で最小となる
ことを特徴とする請求項1記載の太陽電池セル。 - 前記半導体基板の厚さが200μm以下である
ことを特徴とする請求項1記載の太陽電池セル。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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CN200980162404.8A CN102687279B (zh) | 2009-11-13 | 2009-11-13 | 太阳能电池单元 |
US13/504,816 US9196775B2 (en) | 2009-11-13 | 2009-11-13 | Solar battery cell |
EP09851283.3A EP2500948A4 (en) | 2009-11-13 | 2009-11-13 | SOLAR CELL |
PCT/JP2009/069387 WO2011058653A1 (ja) | 2009-11-13 | 2009-11-13 | 太陽電池セル |
JP2011540374A JP5355709B2 (ja) | 2009-11-13 | 2009-11-13 | 太陽電池セル |
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PCT/JP2009/069387 WO2011058653A1 (ja) | 2009-11-13 | 2009-11-13 | 太陽電池セル |
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WO2011058653A1 true WO2011058653A1 (ja) | 2011-05-19 |
Family
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PCT/JP2009/069387 WO2011058653A1 (ja) | 2009-11-13 | 2009-11-13 | 太陽電池セル |
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US (1) | US9196775B2 (ja) |
EP (1) | EP2500948A4 (ja) |
JP (1) | JP5355709B2 (ja) |
CN (1) | CN102687279B (ja) |
WO (1) | WO2011058653A1 (ja) |
Cited By (4)
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JP2013247231A (ja) * | 2012-05-25 | 2013-12-09 | Mitsubishi Electric Corp | 太陽電池セルおよび太陽電池モジュール |
WO2018235315A1 (ja) * | 2017-06-21 | 2018-12-27 | 三菱電機株式会社 | 太陽電池セルおよび太陽電池モジュール |
JPWO2018173125A1 (ja) * | 2017-03-21 | 2019-06-27 | 三菱電機株式会社 | 太陽電池セルおよび太陽電池モジュール |
US11688816B1 (en) * | 2022-02-24 | 2023-06-27 | Solarlab Aiko Europe Gmbh | Electrode structure of back contact cell, back contact cell, back contact cell module, and back contact cell system |
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- 2009-11-13 CN CN200980162404.8A patent/CN102687279B/zh not_active Expired - Fee Related
- 2009-11-13 EP EP09851283.3A patent/EP2500948A4/en not_active Withdrawn
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Also Published As
Publication number | Publication date |
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US9196775B2 (en) | 2015-11-24 |
JP5355709B2 (ja) | 2013-11-27 |
CN102687279A (zh) | 2012-09-19 |
EP2500948A1 (en) | 2012-09-19 |
US20120216861A1 (en) | 2012-08-30 |
JPWO2011058653A1 (ja) | 2013-03-28 |
CN102687279B (zh) | 2015-08-19 |
EP2500948A4 (en) | 2015-10-14 |
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