WO2011058608A1 - Appareil de traitement au plasma - Google Patents

Appareil de traitement au plasma Download PDF

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Publication number
WO2011058608A1
WO2011058608A1 PCT/JP2009/006081 JP2009006081W WO2011058608A1 WO 2011058608 A1 WO2011058608 A1 WO 2011058608A1 JP 2009006081 W JP2009006081 W JP 2009006081W WO 2011058608 A1 WO2011058608 A1 WO 2011058608A1
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Prior art keywords
planar conductor
plasma
conductor
planar
processing apparatus
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PCT/JP2009/006081
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English (en)
Japanese (ja)
Inventor
安東靖典
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日新電機株式会社
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Priority to PCT/JP2009/006081 priority Critical patent/WO2011058608A1/fr
Publication of WO2011058608A1 publication Critical patent/WO2011058608A1/fr

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Definitions

  • the present invention relates to a plasma processing apparatus that performs processing such as film formation by CVD, etching, ashing, sputtering, etc. on a substrate using plasma, and more specifically, induction generated by flowing a high-frequency current through a conductor.
  • the present invention relates to an inductively coupled plasma processing apparatus that generates plasma by an electric field and performs processing on a substrate using the plasma.
  • Non-Patent Document 1 In order to deal with a large substrate such as a glass substrate for a liquid crystal display in an inductively coupled plasma processing apparatus, conventionally, for example, as described in Patent Documents 1 to 3 and Non-Patent Document 1
  • the conductor a structure in which a plurality of linear conductors (also called antennas) are arranged in parallel in a plane parallel to the substrate at a predetermined interval is adopted.
  • JP 11-317299 A (paragraphs 0051-0058, FIG. 3 and FIG. 4) JP 2002-69653 A (paragraph 0014, FIG. 1) JP 2007-262541 A (paragraph 0016, FIG. 1)
  • a plurality of straight conductors 2 are juxtaposed at intervals.
  • Each linear conductor 2 extends in the front and back direction of the paper surface.
  • a high frequency current 4 of 13.56 MHz, for example, is passed through each linear conductor 2
  • a high frequency magnetic field 6 is generated around each linear conductor 2, thereby generating an induction electric field 8 in a direction opposite to the high frequency current 4.
  • Electrons are accelerated by this induction electric field 8 to ionize the gas around each linear conductor 2 to generate plasma around each linear conductor 2 (plasma 12 combined with the plasma is shown in FIG. 26).
  • the induced current 10 flows in the same direction as the induced electric field 8 (that is, the direction opposite to the high-frequency current 4). Since the induced electric field 8 and the induced current 10 are in the same direction, the same figure is shared for convenience (the same applies to FIG. 4).
  • each straight conductor 2 spreads to the periphery by diffusion, the plasma density distribution D 1 generated by one straight conductor 2 is nonuniform as shown in FIG. Density distribution of the plasma 12 obtained by juxtaposed a plurality of linear conductors 2, each linear conductor 2 by plasma density distribution D 2 becomes superimposed plasma density distribution D 1, from the plasma density distribution D 1 is Although the uniformity is improved, the influence of non-uniformity of the plasma density distribution D 1 because remain unavoidable, is not good uniformity.
  • the non-uniformity of the plasma density distribution D 2 causes non-uniformity in substrate processing. Therefore, in order to reduce non-uniformity in substrate processing, the distance L 8 between each linear conductor 2 and the substrate 14 is increased. Must. This is because the non-uniformity reduction due to the diffusion of the plasma 12 is used.
  • the present invention improves the surroundings of the conductor through which a high-frequency current flows, thereby generating plasma with good uniformity over a wide range, and inductively coupled plasma processing apparatus that can easily cope with a large substrate.
  • the main purpose is to provide
  • One of the plasma processing apparatuses according to the present invention is an inductively coupled plasma processing apparatus that generates plasma by an induced electric field generated by flowing a high-frequency current through a conductor and performs processing on a substrate using the plasma.
  • a vacuum vessel that is evacuated and into which gas is introduced, a holder that is provided in the vacuum vessel and holds the substrate, and is provided in the vacuum vessel so as to face a substrate holding surface of the holder
  • a rectangular planar conductor having two sides parallel to the X direction and two sides parallel to the Y direction perpendicular to the X direction, and both ends of the planar conductor on the opposite side of the X direction on the opposite side of the holder.
  • a block-shaped power supply electrode and termination electrode which are attached and extend in the Y direction, and a high-frequency power is supplied to the planar conductor via the power supply electrode and termination electrode to It is characterized in that it comprises a high-frequency power source supplying a high-frequency current to the body.
  • the block-shaped feeding electrode and termination electrode as described above are provided. Therefore, high-frequency power is supplied to the planar conductor almost uniformly in the Y direction. be able to.
  • the high-frequency current mainly flows in the energizing direction of the flat conductor. It flows in a concentrated manner at the four corners of the cross section.
  • the high-frequency current flowing in the planar conductor becomes uniform in the Y direction orthogonal to the energizing direction, as will be described in detail later.
  • the present invention utilizes such a phenomenon, and it is considered that the high-frequency current is made uniform as described above and that the block-shaped feeding electrode and termination electrode are provided as described above.
  • the high-frequency current flows in the plane conductor in a substantially uniform distribution in the Y direction.
  • an induced electric field is generated in the vicinity of the surface on the plasma generation side of the planar conductor, not only in the X direction which is the energizing direction, but also in the Y direction perpendicular to the energizing direction.
  • Plasma with good uniformity can be generated over a wide range along the surface of the conductor.
  • Two block-like termination electrodes extending in the Y direction are attached to both ends in the X direction on the back surface of the planar conductor, and the block extending in the Y direction on the center portion in the X direction on the back surface of the planar conductor Alternatively, a high-frequency power may be supplied to the planar conductor via the power supply electrode and the two termination electrodes.
  • the planar conductor may have a planar dimension larger than that of the substrate.
  • the planar conductor may be composed of a plurality of planar electrodes arranged in parallel in the Y direction, and a region including the planar electrode may have a planar dimension larger than that of the substrate.
  • the surface roughness of the surface of the planar conductor on the holder side is made smaller than the skin thickness of the high-frequency current flowing in the planar conductor, and the surface roughness of the back surface of the planar conductor opposite to the holder is
  • the skin thickness of the high-frequency current flowing through the planar conductor may be larger.
  • a plurality of grooves extending substantially in the whole Y direction of the planar conductor are arranged in parallel in the X direction, and the depth of each groove is It may be larger than the skin thickness of the high-frequency current flowing in the planar conductor.
  • an insulator having a dimension that covers at least the entire area in the Y direction of the planar conductor in the vicinity of the back surface of the planar conductor opposite to the holder.
  • the high-frequency current flowing in the planar conductor flows almost uniformly in the Y direction perpendicular to the energizing direction.
  • an induced electric field is generated in the vicinity of the surface on the plasma generation side of the planar conductor, not only in the X direction which is the energizing direction, but also in the Y direction perpendicular to the energizing direction.
  • Plasma with good uniformity can be generated over a wide range along the surface of the conductor.
  • the substrate can be processed with good uniformity, so that the volume of the vacuum vessel is kept small. Therefore, the exhaust capacity of the vacuum exhaust device can be kept small. As a result, the plasma processing apparatus can be reduced in size and cost.
  • the following further effect is obtained. That is, since the high-frequency power is supplied to the planar conductor via the feeding electrode at the center in the X direction and the two termination electrodes at both ends, the distance between the feeding electrode at the center and one termination electrode is If the ratio is set to a predetermined ratio or less with respect to the wavelength of the high-frequency power, the generation of standing waves can be suppressed and the uniformity of the plasma density distribution in the X direction can be improved. Accordingly, when the standing wave generation is similarly suppressed, the length in the X direction of the planar conductor can be increased up to about twice as compared with the case of claim 1. It becomes possible to respond.
  • the feed electrode and the termination electrode each have a length of 85% or more of the side parallel to the Y direction of the planar conductor, the planar conductor is supplied with high frequency power more uniformly in the Y direction, A high-frequency current can flow more uniformly in the Y direction. Therefore, the uniformity of the plasma in the Y direction can be improved.
  • the planar conductor has a planar dimension equal to or larger than that of the substrate, it becomes easy to generate plasma with good uniformity within a range equal to or larger than the substrate dimension. Accordingly, it is possible to perform processing with higher uniformity even on a large substrate.
  • the planar conductor is composed of a plurality of planar electrodes arranged in parallel in the Y direction, a large planar conductor can be constructed using relatively small planar electrodes. Therefore, it is easy to increase the size of the planar conductor, and it becomes easy to handle a large substrate.
  • the region including the plurality of planar electrodes has a planar dimension larger than that of the substrate, it is easy to generate plasma with good uniformity within a range equal to or larger than the substrate dimension. Accordingly, it is possible to perform processing with higher uniformity even on a large substrate.
  • the following further effect is obtained. That is, since the surface roughness of the back surface of the planar conductor is larger than the skin thickness of the high-frequency current flowing in the planar conductor, the effective path length of the high-frequency current on the back surface side of the planar conductor is increased, and the back surface The impedance on the side becomes larger than that on the surface side, and the high-frequency current flows mainly on the surface side in the planar conductor. Therefore, high-frequency power can be efficiently input to the plasma generation on the surface side of the planar conductor.
  • the plasma on the surface side of the planar conductor faces the substrate and contributes to substrate processing, whereas the plasma on the back surface side does not contribute to it, so by efficiently applying high-frequency power to the plasma generation on the surface side In addition, the utilization efficiency of the high-frequency power, and thus the processing efficiency of the substrate can be increased.
  • the plurality of grooves provided on the back surface of the planar conductor increases the effective path length of the high-frequency current on the back surface side of the planar conductor, and the impedance on the back surface side becomes larger than that on the front surface side.
  • the high frequency power can be efficiently input to the plasma generation on the surface side of the planar conductor by the same action as in the above case. Therefore, the utilization efficiency of the high-frequency power and the processing efficiency of the substrate can be increased.
  • the invention according to claim 8 has the following further effect. That is, even if plasma is generated on the back side of the flat conductor, the insulator provided close to the back side of the flat conductor prevents the free movement of electrons in the plasma, and the insulator causes a large loss of plasma. Since it functions as a surface, plasma generation on the back surface side of the planar conductor can be suppressed. As a result, high-frequency power can be efficiently input to the plasma generation on the surface side of the planar conductor, so that the utilization efficiency of the high-frequency power and thus the processing efficiency of the substrate can be increased.
  • the shielding plate can prevent charged particles in the plasma from being incident on the planar conductor, the feeding electrode, and the termination electrode, so that the plasma potential is not increased due to the charged particles entering these conductors and electrodes.
  • the invention according to claim 10 has the following further effect. That is, since it has an insulator that covers the surfaces of the planar conductor, the feeding electrode, and the termination electrode located in the vacuum vessel, it prevents the charged particles in the plasma from entering these conductors and electrodes. Can do. Therefore, by the same action as that of the ninth aspect, it is possible to suppress the rise of the plasma potential and suppress the metal contamination to the plasma and the substrate.
  • the invention according to claim 11 has the following further effect. That is, since the cooling mechanism for cooling the planar conductor is provided, an increase in the temperature of the planar conductor can be suppressed. As a result, it is possible to suppress deformation due to temperature rise of the planar conductor, temperature rise of the substrate due to radiant heat from the plane conductor to the substrate, and the like.
  • FIG. 2 is a plan view showing an example of the periphery of a planar conductor in FIG. 1, as viewed in the AA direction in FIG. It is the schematic which shows an example of the mode before a plasma generate
  • FIG. 7 is a plan view showing an example around a planar conductor in the example of FIG. 6. It is sectional drawing which shows the example which supported the planar conductor, the electric power feeding electrode, and the termination
  • FIG. 13 is a plan view showing an example around a planar conductor in the example of FIG. 12. It is sectional drawing which shows the other example which has arrange
  • FIG. 1 shows an embodiment of a plasma processing apparatus according to the present invention.
  • This apparatus is an inductively coupled plasma processing apparatus that generates a plasma 70 by an induced electric field generated by flowing a high-frequency current through a planar conductor 50 and processes the substrate 30 using the plasma 70.
  • the substrate 30 is, for example, a flat panel display (FPD) substrate such as a liquid crystal display or an organic EL display, a flexible substrate for a flexible display, or the like, but is not limited thereto.
  • FPD flat panel display
  • the processing applied to the substrate 30 is, for example, film formation by a CVD method, etching, ashing, sputtering, or the like.
  • This plasma processing apparatus is also called a plasma CVD apparatus when a film is formed by CVD, a plasma etching apparatus when etching is performed, a plasma ashing apparatus when ashing is performed, and a plasma sputtering apparatus when sputtering is performed.
  • This plasma processing apparatus includes, for example, a metal vacuum vessel 20.
  • the inside of the vacuum vessel 20 is evacuated by an evacuation device (not shown) through the exhaust port 24.
  • a gas 28 corresponding to the processing content to be applied to the substrate 30 is introduced into the vacuum container 20 through the gas introduction unit 26.
  • the gas 28 is a gas obtained by diluting a source gas with a diluent gas (for example, H 2 ). More specifically, an Si film is formed on the surface of the substrate 30 when the source gas is SiH 4, an SiN film is formed when SiH 4 + NH 3 is used, and an SiO 2 film is formed when SiH 4 + O 2 is used. be able to.
  • the gas introduction part 26 preferably extends along the Y direction described later.
  • a holder 32 that holds the substrate 30 is provided in the vacuum container 20.
  • the holder 32 is supported by the shaft 36.
  • a bearing portion 38 having an electrical insulation function and a vacuum sealing function is provided at a portion where the shaft 36 penetrates the vacuum vessel 20.
  • a negative bias voltage V b may be applied to the holder 32 from the bias power supply 40 via the shaft 36.
  • the bias voltage V b may be a negative pulse voltage. With such a bias voltage V b , for example, the energy when positive ions in the plasma 70 are incident on the substrate 30 can be controlled, and the crystallinity of the film formed on the surface of the substrate 30 can be controlled. .
  • a heater 34 for heating the substrate 30 may be provided in the holder 32.
  • a mask (also referred to as a shadow mask) 42 for preventing a film from being formed on the peripheral edge may be provided on the peripheral edge of the substrate 30.
  • a partition plate 44 for making the flow of the gas 28 uniform and preventing the plasma 70 from reaching the holding mechanism or the like of the substrate 30 may be provided around the mask 42.
  • a rectangular flat conductor 50 is provided in the vacuum vessel 20, more specifically, on the inner side of the ceiling surface 22 of the vacuum vessel 20 so as to face the substrate holding surface of the holder 32.
  • the ceiling surface 22 may be a metal flange, for example.
  • planar conductor 50 is also parallel to the two sides 50a parallel to the X direction and the Y direction with reference to FIG. There are two sides 50b.
  • the planar conductor 50 may be rectangular or square.
  • the planar conductor 50 in FIG. 2 is an example in the case of a rectangle.
  • the two sides 50a parallel to the X direction are long sides, but the present invention is not limited to this.
  • the specific shape of the planar shape of the planar conductor 50 may be determined according to the planar shape of the substrate 30, for example.
  • the material of the planar conductor 50 is, for example, copper (more specifically, oxygen-free copper), aluminum, or the like, but is not limited thereto. The same applies to the power supply electrode 52 and the termination electrode 54 described below.
  • Y is formed along the side 50b of the planar conductor 50 at both ends in the X direction on the back surface of the planar conductor 50.
  • a block-shaped power supply electrode 52 and a terminal electrode 54 extending in the direction are attached.
  • the feeding electrode 52 and the termination electrode 54 are for flowing a high-frequency current from a high-frequency power source 62 described later to the planar conductor 50. More specifically, the feed electrode 52 is a connection part for supplying a high-frequency current from the high-frequency power source 62 to the planar conductor 50 via the matching circuit 64, and the termination electrode 54 is connected to the end of the planar conductor 50. It is a connection part for making a closed loop of a high frequency current from the high frequency power supply 62 to the planar conductor 50 by connecting to the ground part directly or via a capacitor.
  • the lengths of the feed electrode 52 and the termination electrode 54 in the Y direction are close to the length of the side 50b parallel to the Y direction of the planar conductor 50 (for example, the side 50b) in order to allow the high-frequency current to flow as uniformly as possible in the Y direction.
  • the length is substantially the same as the length, it may be slightly smaller or larger than the length of the side 50b.
  • the lengths of the feeding electrode 52 and the termination electrode 54 in the Y direction may be, for example, 85% or more of the side 50b. The same applies to other examples described later.
  • the feeding electrode 52 and the termination electrode 54 are attached to the ceiling surface 22 of the vacuum vessel 20 via insulating flanges 56, respectively. Between these elements, vacuum seal packings 58 are respectively provided.
  • the feeding electrode 52 is connected to one end of the high-frequency power source 62 via the connection conductor 68, the matching circuit 64, and its output bar 66.
  • the other end of the high frequency power supply 62 is grounded.
  • the termination electrode 54 is connected to a ground portion near the matching circuit 64 via the connection conductor 69.
  • the termination electrode 54 may be grounded directly or via a capacitor.
  • the connection conductors 68 and 69 are preferably plate-shaped having widths approximately the same as the dimensions of the feed electrode 52 and the termination electrode 54 in the Y direction so that a high-frequency current flows as uniformly as possible in the Y direction.
  • the upper portion of the ceiling surface 22 is preferably covered with a shield box 60 that prevents high-frequency leakage as in this example.
  • the frequency of the high-frequency power output from the high-frequency power source 62 is, for example, a general 13.56 MHz, but is not limited to this.
  • the length of the planar conductor 50 in the X direction is determined by considering the reflected power generated by impedance mismatch at the termination electrode 54 and the wavelength change accompanying the increase in the dielectric constant during plasma generation in the vacuum of the high frequency power. It is preferable to set the wavelength to 1/8 (about 2.75 m in the case of 13.56 MHz) or less. By doing so, it is difficult for a standing wave to be generated between the feeding electrode 52 and the termination electrode 54, and it is possible to suppress the plasma density distribution from becoming nonuniform in the X direction due to the standing wave. .
  • the block-shaped power supply electrode 52 and the termination electrode 54 as described above are provided. Electric power can be supplied. Unlike the above, if high-frequency power is supplied to the planar conductor 50 using a small electrode like a dot, it is not possible to supply the planar conductor 50 with substantially uniform high-frequency power in the Y direction.
  • the high-frequency current 4 is simply expressed by the skin effect or the like, as in the example shown in FIG.
  • the current flows mainly at the four corners of the cross section of the planar conductor 48 perpendicular to the energization direction. This is because the distribution of the high-frequency impedance Z r is small at the four corners of the planar conductor 48 and large at the other portions as in the example shown in FIG.
  • the positions of the feeding electrode and the termination electrode, etc. it is not generally understood how it flows.
  • plasma 70 is generated in the vicinity of the planar conductor 50. That is, as shown in FIG. 4, when a high-frequency current 4 is passed through the planar conductor 50, a high-frequency magnetic field 6 is generated around the planar conductor 50, thereby generating an induced electric field 8 in the direction opposite to the high-frequency current 4. Electrons are accelerated by the induced electric field 8 to ionize the gas 28 (see FIG. 1) in the vicinity of the planar conductor 50 to generate plasma 70 in the vicinity of the planar conductor 50, and the induced current 10 is induced in the plasma 70. 8 in the same direction (that is, the direction opposite to the high-frequency current 4).
  • the high-frequency current 4 flowing in the planar conductor 50 is orthogonal to the energizing direction. It becomes uniform in the Y direction. The general reason is as follows.
  • the high-frequency current 4 flowing in the planar conductor 50 becomes uniform in the Y direction.
  • the high-frequency current 4 is distributed almost uniformly in the Y direction in the planar conductor 50 by having the block-shaped feeding electrode 52 and the termination electrode 54 as described above. It begins to flow.
  • an induced electric field 8 and an induced current 10 are generated in the vicinity of the surface of the plane conductor 50 on the plasma 70 generation side, not only in the X direction, which is the energization direction, but also in the Y direction perpendicular thereto.
  • the induced electric field 8 can generate a plasma with good uniformity over a wide range along the plane of the planar conductor 50.
  • a schematic example of the plasma density distribution D 3 is shown in FIG. An actual measurement example will be described later.
  • the plasma processing apparatus can be reduced in size and cost.
  • each of the feeding electrode 52 and the termination electrode 54 has a length of 85% or more of the side 50b parallel to the Y direction of the planar conductor 50. By doing so, it is possible to supply the high-frequency power to the planar conductor 50 more uniformly in the Y direction, and allow the high-frequency current 4 to flow more uniformly in the Y direction. Therefore, the uniformity of the plasma 70 in the Y direction can be improved.
  • the planar conductor 50 preferably has a planar dimension equal to or larger than the planar dimension of the substrate 30. By doing so, it becomes easy to generate plasma 70 with good uniformity within a range equal to or greater than the substrate dimensions. Therefore, it is possible to perform processing with higher uniformity even on the large substrate 30.
  • a cooling mechanism for cooling the planar conductor 50 by flowing the coolant 72 inside the planar conductor 50 may be provided.
  • the cooling mechanism has a structure in which the coolant 72 flows through the coolant channel 74 provided in the planar conductor 50 through the coolant channel 76 provided in the feeding electrode 52 (see FIG. 1) and the termination electrode 54. I am doing.
  • the refrigerant 72 is, for example, cooling water, but is not limited to this.
  • a plurality of refrigerant flow paths 74 in the planar conductor 50 may be arranged in parallel in the Y direction.
  • the cooling mechanism as described above is provided, the temperature rise of the planar conductor 50, the feeding electrode 52, and the termination electrode 54 can be suppressed. As a result, it is possible to suppress the deformation due to the temperature rise of the planar conductor 50 and the like, and the temperature rise of the substrate 30 due to the radiant heat from the planar conductor 50 and the like to the substrate 30.
  • the two terminal electrodes 54 as described above are attached to both ends in the X direction on the back surface of the flat conductor 50, and the power supply as described above is provided at the center portion on the back surface of the flat conductor 50.
  • the electrode 52 may be attached.
  • the distance between the central feeding electrode 52 and one terminal electrode 54 is set to a predetermined ratio or less with respect to the wavelength of the high frequency power, For example, since it may be set to about 1/8 or less as described above, the length of the planar conductor 50 in the X direction can be reduced in comparison with the example shown in FIGS. It becomes possible to enlarge it up to about twice. Therefore, it becomes possible to deal with a larger substrate 30.
  • the feeding electrode 52 and the termination electrode 54 may be attached to the ceiling surface 22 via one insulating flange 57.
  • the feeding electrode 52 is provided at the center as shown in FIGS. 6 and 7 and the two termination electrodes 54 are provided at both ends.
  • the planar conductor 50 may be composed of a plurality of (two in the example of FIG. 9) planar electrodes 51 arranged in parallel in the Y direction.
  • the large planar conductor 50 can be configured using the relatively small planar electrode 51. Accordingly, it is easy to increase the size of the planar conductor 50, and thus it is easy to handle the large-sized substrate 30.
  • the gap 90 in the Y direction between the planar electrodes 51 is preferably small.
  • the region including the plurality of planar electrodes 51 has a planar dimension equal to or larger than the planar dimension of the substrate 30.
  • the surface roughness of the surface 50 c on the holder side of the flat conductor 50 is made smaller than the skin thickness ⁇ of the high-frequency current flowing in the flat conductor 50, and what is the holder of the flat conductor 50?
  • the surface roughness of the opposite back surface 50d may be made larger than the skin thickness ⁇ .
  • the skin thickness ⁇ is expressed by the following equation.
  • f is the frequency of the high-frequency current
  • ⁇ is the magnetic permeability of the planar conductor 50
  • ⁇ is the conductivity of the planar conductor 50.
  • the frequency is 13.56 MHz.
  • the planar conductor 50 is pure copper, the magnetic permeability ⁇ is 4 ⁇ ⁇ 10 ⁇ 7 N / A 2 and the electrical conductivity ⁇ is 59.6 ⁇ 10 6 / ⁇ m, so the skin thickness ⁇ is about 17.7 ⁇ m.
  • the planar conductor 50 is aluminum, the permeability ⁇ is 4 ⁇ ⁇ 10 ⁇ 7 N / A 2 and the conductivity ⁇ is 37.7 ⁇ 10 6 / ⁇ m, so the skin thickness ⁇ is about 22.2 ⁇ m.
  • the surface roughness is, for example, the maximum height R z defined in JIS B0601: 2001.
  • the surface roughness of the region connecting the feeding electrode 52 and the termination electrode 54 does not need to be increased as described above. This is because the contact resistance is not increased.
  • the surface roughness of the back surface 50d of the planar conductor 50 is as large as possible except for the region connecting the power supply electrode 52 and the termination electrode 54, preferably substantially the entire surface roughness.
  • blasting may be performed.
  • the machining accuracy of machining may be roughened.
  • the surface roughness of the surface 50c (the maximum height R z) is 0.8 [mu] m
  • the surface roughness of the back surface 50d is 25 [mu] m.
  • the above relationship with the skin thickness ⁇ is satisfied regardless of whether the planar conductor 50 is copper or aluminum.
  • the high-frequency current on the back surface 50d side of the planar conductor 50 flows along a corrugated path along the unevenness of the back surface 50d, so the effective path length of the high-frequency current is large. Become. Therefore, the impedance on the back surface 50d side becomes larger than that on the front surface 50c side, and the high-frequency current flows mainly on the front surface 50c side in the planar conductor 50. Therefore, high-frequency power can be efficiently input to the generation of the plasma 70 (see FIG. 1) on the surface 50c side of the planar conductor 50.
  • the reason for this is simply as follows. That is, the distance between the high-frequency current flowing on the front surface 50c side and the high-frequency current flowing on the back surface 50d side of the planar conductor 50 is about the thickness of the planar conductor 50 (for example, 5 mm). The strength of the induced electric field due to the high-frequency current is attenuated on the order of the square to the third power of the distance, and the plasma density is reduced accordingly. Therefore, the difference in the thickness of the planar conductor 50 also affects the generation of the plasma 70. This is confirmed by the measurement results shown in FIG.
  • the plasma 70 on the surface 50c side of the planar conductor 50 faces the substrate 30 and contributes to the substrate processing, whereas the plasma on the back surface 50d side does not contribute to it, so that plasma generation on the surface 50c side is performed as described above.
  • the utilization efficiency of the high-frequency power and thus the processing efficiency of the substrate 30 can be increased.
  • the skin thickness ⁇ Based on the skin thickness ⁇ , as can be seen from the above description, when the surface roughness of the planar conductor 50 is larger than the skin thickness ⁇ , the high-frequency current flows along a waved path along the surface irregularities. This is because, when the surface roughness is smaller than the skin thickness ⁇ , the method of corrugation is reduced and the effect of unevenness is reduced.
  • a plurality of the grooves 78 may be arranged in the X direction, and the depth D of each groove 78 may be larger than the skin thickness ⁇ of the high-frequency current flowing in the planar conductor 50.
  • each groove 78 extends is set to the Y direction because each groove 78 is substantially orthogonal to the high-frequency current flowing in the planar conductor 50 (see high-frequency current 4 in FIG. 2), and the effective path of the high-frequency current. This is to increase the length.
  • the groove 78 may be formed in the widest possible area of the back surface 50d of the planar conductor 50 except for the area where the power supply electrode 52 and the termination electrode 54 are connected, preferably substantially over the entire surface.
  • machining for example, milling
  • each groove 78 is made larger than the skin thickness ⁇ is the same reason as described above for increasing the surface roughness of the back surface 50d.
  • the high-frequency current on the back surface 50d side of the planar conductor 50 flows along a corrugated path on the portion of each groove 78. Route length increases. Therefore, since the impedance on the back surface 50d side is larger than that on the front surface 50c side, the plasma 70 (see FIG. 1) on the front surface 50c side of the planar conductor 50 is obtained by the same action as in the above example in which the surface roughness is increased. High-frequency power can be efficiently input for generation. Therefore, the utilization efficiency of the high frequency power, and thus the processing efficiency of the substrate 30 can be increased.
  • an insulator 80 having a size that covers at least a substantially entire area of the planar conductor 50 in the Y direction may be provided close to the back surface 50 d of the planar conductor 50. In the region where the power supply electrode 52 and the termination electrode 54 are connected to the back surface 50d of the planar conductor 50, the insulator 80 is not necessarily provided.
  • the material of the insulator 80 is, for example, quartz, alumina or the like, but is not limited thereto.
  • the insulator 80 prevents free movement of electrons in the plasma even if plasma is generated on the back surface 50d side of the planar conductor 50, and the insulator 80 Serves as a large loss surface for plasma, and plasma generation on the back surface 50d side of the planar conductor 50 can be suppressed.
  • high-frequency power can be efficiently input to generate the plasma 70 (see FIG. 1) on the surface side of the planar conductor 50, so that the utilization efficiency of the high-frequency power and thus the processing efficiency of the substrate 30 can be increased.
  • the insulator 80 may be in contact with the back surface 50d of the planar conductor 50 as a proximity mode, or there may be a small gap between the back surface 50d. For example, there may be a gap of 10 mm or less. This is because, even if there is a small gap, the insulator 80 functions as the above-described plasma loss surface.
  • the insulator 80 is dimensioned so as to cover substantially the entire area of the planar conductor 50 in the Y direction because the electrons in the plasma move in the X direction by the induced electric field 8 (see FIG. 4) generated in the X direction. This is because the movement is prevented by the insulator 80 in substantially the entire region in the Y direction.
  • the insulator 80 may be divided into a plurality of pieces in the X direction, as long as free movement of electrons in the plasma in the X direction is prevented. In other words, the insulator 80 may be intermittently disposed in the X direction. However, from the viewpoint of the above-described loss with respect to plasma, the insulator 80 is preferably larger. That is, as in this example, the insulator 80 is preferably provided over substantially the entire area of the back surface 50d of the planar conductor 50 except for the region where the power supply electrode 52 and the termination electrode 54 are connected.
  • a technique of providing the insulator 80 on the back surface of the planar conductor 50 as in the examples shown in FIGS. 12 to 14 may be used in combination. If it does in that way, each effect mentioned above can be show
  • the plasma 70 generated in the vacuum vessel 20 includes the planar conductor 50, the feeding electrode 52, and the termination electrode 54 located in the vacuum vessel 20 (see FIG. 1, the same applies hereinafter).
  • a shield plate 82 made of an insulating material may be provided for shielding from the same as in FIG.
  • a shielding plate 82 may be attached to the surface of the planar conductor 50.
  • a small gap may be present from the viewpoint of preventing the shielding plate 82 from contacting the planar conductor 50 having a low temperature. If the gap is small, no plasma is generated in the space, so that high-frequency power can be effectively used for generating the original plasma 70.
  • the material of the shielding plate 82 is, for example, quartz, alumina, silicon carbide, silicon or the like. If it is difficult to reduce oxygen by hydrogen plasma and release oxygen from the shielding plate 82, a non-oxide material such as silicon or silicon carbide may be used. For example, it is easy to use a silicon plate.
  • the power supply electrode 52 and the termination electrode 54 are supported by the insulating flange 57, but the same structure as the example shown in FIG. 1 may be adopted. Moreover, you may have the electric power feeding electrode 52 in the center part of the X direction of the planar conductor 50 like the example shown in FIG. The same applies to the example shown in FIG.
  • the shielding plate 82 prevents the charged particles in the plasma 70 from entering the planar conductor 50, the feeding electrode 52 and the termination electrode 54. Therefore, it is possible to suppress an increase in plasma potential due to incidence of charged particles (mainly electrons) on these conductors 50 and electrodes 52 and 54, and the surfaces of these conductors 50 and electrodes 52 and 54 are charged particles. It is possible to suppress the occurrence of metal contamination (metal contamination) on the plasma 70 and the substrate 30 by being sputtered by (mainly ions).
  • an insulator 84 may be provided to cover the surfaces of the planar conductor 50, the feeding electrode 52, and the termination electrode 54 that are located in the vacuum vessel 20.
  • the insulator 84 is, for example, an insulating film.
  • the material of the insulator 84 is, for example, quartz, alumina, silicon carbide, silicon or the like.
  • a non-oxide material such as silicon or silicon carbide may be used.
  • the shielding plate 82 is provided. That is, since the thickness of the insulator 84 can be made much smaller than that of the shielding plate 82, the plasma 70 can be generated very close to the planar conductor 50. Therefore, the utilization efficiency of the high frequency power can be further increased.
  • the insulator 84 is in intimate contact with the planar conductor 50, so that the insulator 84 has a high cooling effect, and therefore the temperature of the insulator 84 is high.
  • the rise can be suppressed, and the radiant heat to the substrate 30 can be suppressed.
  • an experimental planar conductor 50 having the structure shown in FIG. 15 was placed in an experimental vacuum vessel.
  • a gap of 2 mm was provided between the insulating flange 57 and the flat conductor 50, and a gap of 1 mm was provided between the flat conductor 50 and the shielding plate 82 made of a quartz plate.
  • FIG. 17 shows an example of the planar conductor 50 used for the measurement.
  • the dimension of this planar conductor (L 2 ⁇ L 3 ⁇ thickness) is 278 ⁇ 213 ⁇ 5 mm.
  • the material was aluminum that was easy to process.
  • the width of the feeding electrode 52 and the termination electrode 54 in the X direction is 15 mm, and the length in the Y direction is 213 mm, which is the same as that of the planar conductor 50.
  • the material was aluminum. The same applies to the example shown in FIG.
  • Argon gas was introduced into the vacuum vessel. This is the same for all measurements. The gas pressure in the vacuum vessel is described in each figure.
  • the planar conductor 50 was supplied with high frequency power having a frequency of 13.56 MHz via the feeding electrode 52 and the termination electrode 54 to generate plasma (argon plasma). This frequency is the same for all measurements. The magnitude of the supplied high frequency power is shown in each figure.
  • FIG. 18 shows the result of measuring the electron density distribution in the Y direction while changing the magnitude of the high-frequency power.
  • the position in the X direction is 0 (the same applies to FIG. 19).
  • the electron density distribution that is, plasma
  • a density distribution was obtained. The reason why the uniformity is poor when the high-frequency power is 200 W is considered to be due to the fact that the plasma is light and the impedance distribution by the plasma described above (see the explanation of FIG. 4) is low.
  • FIG. 19 shows changes in the uniformity of the electron density distribution in the Y direction with respect to the high frequency power, including other gas pressure conditions.
  • This uniformity is a value obtained by dividing the standard deviation of the electron density distribution by the average value, and is a general expression method in this technical field. The smaller the value, the better the uniformity. It can be seen that when the gas pressure and the high frequency power are large, plasma with very good uniformity can be obtained. This is thought to be because high density plasma is generated and the above-described uniforming of the impedance distribution by the plasma is greatly effective.
  • FIGS. 1 and 278 mm the results of measuring the electron density distribution in the X direction and the uniformity of the electron density distribution are shown in FIGS.
  • the position in the Y direction is zero.
  • the high-frequency power is 400 W or more, particularly 600 W or more, and the uniformity is very good.
  • a plasma density distribution was obtained.
  • the plasma density rapidly decreases in the regions outside both ends in the longitudinal direction of the linear conductors and outside both ends in the parallel arrangement direction.
  • FIG. 22 shows the result of measuring the electron density at the center of the planar conductor 50 when the surface roughness of the planar conductor 50 in FIG. 17 is changed, corresponding to the example shown in FIG.
  • the surface roughness on the front surface side / the surface roughness on the back surface side was 0.8 ⁇ m / 0.8 ⁇ m for ⁇ and 0.8 ⁇ m / 25 ⁇ m for ⁇ .
  • planar conductor 50 is composed of two planar electrodes 51 arranged in parallel in the Y direction. This corresponds to the planar conductor 50 shown in FIG. 17 divided into two planar electrodes 51 with a gap 90 therebetween. Others are the same as the case of FIG.
  • the dimension L 5 in the Y direction of each planar electrode 51 was 80 mm, and the dimension L 6 of the gap 90 was 53 mm.
  • the outer dimensions L 2 ⁇ L 3 including the two planar electrodes 51 are the same as those in FIG.
  • FIGS. 18 and 19 the results of measuring the electron density and electron density distribution in the Y direction are shown in FIGS.
  • the position in the X direction is zero. These correspond to FIGS. 18 and 19, respectively.
  • the high-frequency power was 400 W or more
  • a plasma density distribution with very good uniformity was obtained over a wide range, particularly at 600 W or more.
  • the reason why the electron density decreases near the center in the Y direction when the high-frequency power is 200 W is thought to be that the influence of the presence of the gap 90 is increased because the plasma is light. This can be alleviated by reducing the dimension L 6 of the gap 90.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

L'invention porte sur un appareil de traitement au plasma à couplage inductif qui peut générer un plasma ayant une excellente uniformité sur un large intervalle et qui est applicable à des grands substrats. L'appareil de traitement au plasma comprend : un conducteur plat rectangulaire (50) qui est installé dans un récipient à vide (20) de telle sorte que le conducteur plat est face à la surface de retenue du substrat d'une monture (32), et a deux côtés parallèles dans la direction X et deux côtés parallèles dans la direction Y qui coupent perpendiculairement la direction X ; une électrode d'alimentation électrique en forme de bloc (52) et une électrode de borne (54) qui sont attachées aux deux parties d'extrémité dans la direction X sur la surface arrière du conducteur plat, respectivement, et qui s'étendent dans la direction Y ; et une alimentation électrique à haute fréquence (62) qui alimente le conducteur plat (50) avec une alimentation à haute fréquence par l'intermédiaire des deux électrodes (52, 54) et qui fait circuler un courant à haute fréquence dans le conducteur plat (50).
PCT/JP2009/006081 2009-11-13 2009-11-13 Appareil de traitement au plasma WO2011058608A1 (fr)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011179096A (ja) * 2010-03-03 2011-09-15 Mitsui Eng & Shipbuild Co Ltd 薄膜形成装置
JP2013201157A (ja) * 2012-03-23 2013-10-03 Mitsui Eng & Shipbuild Co Ltd プラズマ処理装置
JP2015513758A (ja) * 2012-01-31 2015-05-14 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 多目的動作及び高効率ｒｆ電力結合用のリボンアンテナ
EP2592644A3 (fr) * 2011-11-09 2016-01-06 Nissin Electric Co., Ltd. Appareil de traitement à plasma
JP2021040110A (ja) * 2019-09-05 2021-03-11 Toto株式会社 静電チャック
JP2021064450A (ja) * 2019-10-10 2021-04-22 日新電機株式会社 プラズマ処理装置

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JPH0669160A (ja) * 1992-08-21 1994-03-11 Mitsubishi Heavy Ind Ltd プラズマ化学エッチング装置
JPH08138888A (ja) * 1994-11-16 1996-05-31 Aneruba Kk プラズマ処理装置
JPH0969399A (ja) * 1995-08-31 1997-03-11 Tokyo Electron Ltd プラズマ処理装置
JPH11111494A (ja) * 1997-09-30 1999-04-23 Hitachi Ltd プラズマ処理装置
JPH11260596A (ja) * 1998-03-16 1999-09-24 Hitachi Ltd プラズマ処理装置及びプラズマ処理方法
JPH11317299A (ja) * 1998-02-17 1999-11-16 Toshiba Corp 高周波放電方法及びその装置並びに高周波処理装置
JP2002134418A (ja) * 2000-10-23 2002-05-10 Tokyo Electron Ltd プラズマ処理装置
JP2003068723A (ja) * 2001-08-30 2003-03-07 Toshiba Corp プラズマ処理装置およびプラズマ処理方法
JP2003234338A (ja) * 2002-02-08 2003-08-22 Tokyo Electron Ltd 誘導結合プラズマ処理装置
JP2005285397A (ja) * 2004-03-29 2005-10-13 Pearl Kogyo Co Ltd プラズマモニタリングセンサー

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669160A (ja) * 1992-08-21 1994-03-11 Mitsubishi Heavy Ind Ltd プラズマ化学エッチング装置
JPH08138888A (ja) * 1994-11-16 1996-05-31 Aneruba Kk プラズマ処理装置
JPH0969399A (ja) * 1995-08-31 1997-03-11 Tokyo Electron Ltd プラズマ処理装置
JPH11111494A (ja) * 1997-09-30 1999-04-23 Hitachi Ltd プラズマ処理装置
JPH11317299A (ja) * 1998-02-17 1999-11-16 Toshiba Corp 高周波放電方法及びその装置並びに高周波処理装置
JPH11260596A (ja) * 1998-03-16 1999-09-24 Hitachi Ltd プラズマ処理装置及びプラズマ処理方法
JP2002134418A (ja) * 2000-10-23 2002-05-10 Tokyo Electron Ltd プラズマ処理装置
JP2003068723A (ja) * 2001-08-30 2003-03-07 Toshiba Corp プラズマ処理装置およびプラズマ処理方法
JP2003234338A (ja) * 2002-02-08 2003-08-22 Tokyo Electron Ltd 誘導結合プラズマ処理装置
JP2005285397A (ja) * 2004-03-29 2005-10-13 Pearl Kogyo Co Ltd プラズマモニタリングセンサー

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011179096A (ja) * 2010-03-03 2011-09-15 Mitsui Eng & Shipbuild Co Ltd 薄膜形成装置
EP2592644A3 (fr) * 2011-11-09 2016-01-06 Nissin Electric Co., Ltd. Appareil de traitement à plasma
JP2015513758A (ja) * 2012-01-31 2015-05-14 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 多目的動作及び高効率ｒｆ電力結合用のリボンアンテナ
JP2013201157A (ja) * 2012-03-23 2013-10-03 Mitsui Eng & Shipbuild Co Ltd プラズマ処理装置
JP2021040110A (ja) * 2019-09-05 2021-03-11 Toto株式会社 静電チャック
JP7408958B2 (ja) 2019-09-05 2024-01-09 Toto株式会社 静電チャック
JP2021064450A (ja) * 2019-10-10 2021-04-22 日新電機株式会社 プラズマ処理装置

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