WO2011052518A1 - 抵抗素子、赤外線センサおよび電気機器 - Google Patents
抵抗素子、赤外線センサおよび電気機器 Download PDFInfo
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- WO2011052518A1 WO2011052518A1 PCT/JP2010/068806 JP2010068806W WO2011052518A1 WO 2011052518 A1 WO2011052518 A1 WO 2011052518A1 JP 2010068806 W JP2010068806 W JP 2010068806W WO 2011052518 A1 WO2011052518 A1 WO 2011052518A1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
- H01C7/043—Oxides or oxidic compounds
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/046—Materials; Selection of thermal materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
- H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
Definitions
- the present invention relates to a resistance element having a negative temperature coefficient, an infrared sensor configured using the resistance element, and an electric device using the resistance element for inrush current suppression.
- NTC thermistors having a negative temperature coefficient are used not only for conventional temperature sensing and compensation purposes but also in combination with other members. Therefore, it is also used for applications such as hydrogen sensors, infrared sensors, and non-contact temperature sensors.
- NTC thermistor a change in the external environment to be sensed is converted into a temperature change through a catalyst material or the like, or condensed by an infrared lens or the like, and the change amount is read and sensed by an NTC thermistor. Therefore, if an NTC thermistor whose resistance changes greatly with a smaller temperature change is used, the sensitivity can be increased.
- a resistive element having a negative temperature coefficient that is of interest to the present invention there is a CTR (Critical Temperature Resistor) element.
- the resistance change due to temperature is abrupt in the CTR element as compared with a general NTC thermistor having a negative temperature coefficient.
- a positive characteristic (PTC) thermistor that has a positive temperature coefficient and whose resistance suddenly increases when a certain temperature is exceeded, and a CTR element exhibit opposite characteristics. Therefore, it is considered that such a CTR element is more suitable than a general NTC thermistor for detecting a minute temperature change or for use as a power thermistor, that is, for controlling inrush current.
- Patent Document 1 An example of the CTR element is described in Patent Document 1.
- the CTR element described in Patent Document 1 uses a VO 2 -based oxide as a base material.
- VO 2 -based oxides have been commercialized, their characteristics deteriorate due to repeated use, such as poor stability, operation temperature (transition temperature) is difficult to control, Due to problems such as a narrow controllable temperature range, it has not spread widely.
- a CTR element that exhibits a large resistance change at any temperature above room temperature and can change the operating temperature over a wide temperature range can be realized, it can be used not only for temperature or infrared detection, but also for power thermistors and ESD countermeasures. There is a possibility that it can also be used as a thermistor.
- RBaMn 2 O 6 (R is Nd, Sm, Eu, Gd, Tb, Dy, Ho, and Y described in Patent Document 2 or Non-Patent Document 1). At least one selected from the above.)
- the RBaMn 2 O 6 -based material maintains a special state of charge alignment insulator at room temperature or higher, and the charge alignment is lost as the temperature rises, resulting in metal conduction and exhibiting CTR characteristics.
- the operating temperature of the RBaMn 2 O 6 based material can be changed by changing the type of the rare earth element R.
- the rate of change in resistance is as small as about an order of magnitude, and must be limited in practical applications.
- an object of the present invention is to provide a resistance element that can solve the above-described problems.
- Another object of the present invention is to provide an infrared sensor configured using the resistance element.
- Still another object of the present invention is to provide an electrical device using the resistance element for inrush current suppression.
- the present invention is mainly composed of an oxide conductor represented by the chemical formula: RBaMn 2 O 6 (R is at least one selected from Nd, Sm, Eu, Gd, Tb, Dy, Ho, and Y).
- R is at least one selected from Nd, Sm, Eu, Gd, Tb, Dy, Ho, and Y.
- a resistance element including an element body having a temperature coefficient of at least one and an at least one pair of electrodes provided to apply an electric field to at least a part of the element body.
- the resistance element according to the present invention is characterized by the magnitude of the electric field strength employed when an electric field is applied to the element body through a pair of electrodes.
- an electric field having an electric field intensity of 100 V / cm or more the element element It is characterized in that it is used with greatly changing the resistance.
- the resistive element is used to detect infrared rays, for example, by measuring a current flowing through the element body when an electric field having an electric field strength of 100 V / cm or more is applied to the element body through a pair of electrodes.
- An electric field with an electric field strength of 100 V / cm or more is applied to the element body through a pair of electrodes when an inrush current flows to the protected circuit when the resistor element is used or connected in series to the current line to the protected circuit. In this way, it can be used for inrush current suppression applications.
- the present invention is also directed to an infrared sensor configured using the above-described resistance element.
- An infrared sensor has an oxide conductor represented by the above chemical formula: RBaMn 2 O 6 as a main component, an element having a negative temperature coefficient, and an electric field applied to a surface layer portion of the element
- a power source provided with at least one pair of electrodes, having a resistance element, and applying an electric field of 100 V / cm or more to the element body through the pair of electrodes, and an electric field of 100 V / cm or more from the power source It is characterized by comprising a current measuring means for measuring a current flowing through the element body when a current is applied.
- the resistance change of the element caused by the temperature change due to the infrared rays received on the surface layer of the element is detected by measuring the change in current using the current measuring means.
- infrared sensor detects a change in temperature at the surface layer of the element body in order to detect infrared rays, and thus functions as a temperature sensor. Therefore, in this specification, the term “infrared sensor” is used as synonymous with “temperature sensor”.
- the present invention further includes a protected circuit, a power source, and a current line for supplying power to the protected circuit, and a resistance element for suppressing an inrush current to the protected circuit is connected in series to the current line. Directed to connected electrical equipment.
- the resistance element includes an oxide conductor represented by the chemical formula: RBaMn 2 O 6 as a main component, a negative temperature coefficient, and at least a part of the element.
- An at least one pair of electrodes provided for applying an electric field, and when an inrush current flows into the protected circuit, an electric field having an electric field strength of 100 V / cm or more is applied to the element body through the electrodes. It is characterized by being.
- the element having a negative temperature coefficient used in the present invention only needs to have a negative temperature coefficient at the use temperature.
- the element body becomes metallic in a high temperature region exceeding the use temperature, that is, a positive temperature coefficient.
- the temperature coefficient may be shown.
- An element body having a negative temperature coefficient as a main component and having an oxide conductor represented by the chemical formula: RBaMn 2 O 6 used in the present invention is placed under a certain electric field strength of 100 V / cm or more.
- RBaMn 2 O 6 oxide conductor represented by the chemical formula: RBaMn 2 O 6 used in the present invention
- an infrared sensor is configured using a resistance element including the element body, the sensitivity of such a sensor can be increased, and a sensor capable of detecting a wide temperature range from room temperature to about 200 ° C., for example. Can be realized.
- the resistance change rate is higher than when the NTC thermistor is used. The current can be suppressed more efficiently.
- Resistance elements measured under various electric field strengths when (a) GdBaMn 2 O 6 and (b) DyBaMn 2 O 6 are used as oxides constituting the element body of the resistance element It is a figure which shows the temperature dependence of resistance. It is a figure which shows the temperature dependence of resistance by comparing the case of the resistance element used in this invention, and the case of a general NTC thermistor. It is a figure which shows the time dependence of resistance by comparing the case of the resistance element used in this invention, and the case of a general NTC thermistor.
- 1 is a front view schematically showing an infrared sensor according to an embodiment of the present invention. It is a block diagram showing electric equipment by other embodiments of this invention illustratively.
- the resistance element used in the present invention is represented by the chemical formula: RBaMn 2 O 6 (R is at least one selected from Nd, Sm, Eu, Gd, Tb, Dy, Ho and Y) and has a double perovskite structure.
- R is at least one selected from Nd, Sm, Eu, Gd, Tb, Dy, Ho and Y
- This resistance element is used in a state where a bias electric field or a trigger electric field having an electric field intensity of 100 V / cm or more is applied to the element body through the pair of electrodes.
- the applied voltage is increased from 0.01 V. It showed only resistance temperature characteristics substantially similar to a typical NTC thermistor, but when the applied voltage was increased to 10V, it showed a large resistance change rate of one digit or more, and the resistance change rate reached two digits. It was confirmed.
- an applied voltage of 0.01 V corresponds to an electric field strength of 2.5 V / cm
- an applied voltage of 0.1 V corresponds to an electric field strength of 25 V / cm
- an applied voltage of 1 V is 250 V.
- the applied voltage of 10 V corresponds to an electric field strength of 2500 V / cm.
- FIG. 1 a temperature corresponding to a charge alignment transition temperature (Tco) described later is displayed, but the Tco of DyBaMn 2 O 6 shown in FIG. 1 (b) is higher than the measurement temperature range. There is about 220 ° C.
- the operating (transition) temperature can be changed by changing the applied voltage.
- the transition temperature tends to converge to a certain temperature.
- changing the applied voltage means changing the electric field strength applied between the pair of electrodes, and changing the electric field strength can also be done by changing the distance between the pair of electrodes.
- An oxide containing a physical conductor as a main component has a special state of charge alignment in a certain temperature range.
- This chemical substance has an average valence of Mn of 3.5 from the chemical formula, and is generally a valence indicating metallic conduction.
- Tco charge alignment transition temperature
- the carrier is frozen and exhibits semiconductor or insulator characteristics. When the temperature is equal to or higher than Tco, the charge alignment state collapses, and the metal-insulator transition is characterized in that the resistance changes from a high state to a low state.
- the present inventor considers that the above-described charge alignment state may be destroyed by an electric field, current, or Joule heat, and is used under a certain electric field strength of 100 V / cm or more as in the present invention. By doing so, it was found that the transition temperature shifts and a larger resistance change can be realized.
- FIG. 2 schematically shows the temperature dependence of resistance
- FIG. 3 shows the time dependence of resistance, that is, a constant voltage and The temperature change of the resistance under current is schematically shown.
- the NTC thermistor generally has a feature that the resistance gradually decreases as the temperature rises.
- the resistance element according to the present invention is characterized in that the resistance rapidly decreases at a certain temperature as indicated by a solid line. As shown in FIG. 3, the resistance changes with time when a certain voltage and current are applied to these two types of resistance elements. Reach.
- the composition of the element body, the distance between the pair of electrodes, etc. are adjusted, and the applied electric field and the operation (transition) temperature are controlled, as shown by the solid line in FIG.
- the initial resistance when the resistance is lowered to the same resistance can be made higher than that of a general NTC thermistor indicated by a dotted line.
- the resistance element according to the present invention when the resistance element according to the present invention is connected in series to a current line as in a general power thermistor, it is constant according to the element resistance when the power is turned on. However, as with a general power thermistor, the resistance value gradually decreases, and sufficient current flows to the element or circuit to which the current is to be supplied. . At this time, unlike the general power thermistor, the resistance element according to the present invention has a characteristic that the initial resistance can be higher than that of the power thermistor because the resistance change rate is large. Therefore, when an inrush current flows, the inrush current can be efficiently suppressed by a general power thermistor.
- NTC thermistor when an inrush current flows, heat is generated and the resistance decreases.
- the resistance decreases only by one digit. Accordingly, the effect of suppressing the inrush current is limited, and when a large current and voltage are applied, the NTC thermistor may be destroyed due to the stress.
- the oxide constituting the element body of the resistance element according to the present invention is originally in a special state as a charge-aligned insulator, and carriers are present but frozen. Is in a state. When this state is destroyed by voltage and temperature, it shows a resistance change of one digit or more, and since the load applied to the element is small, that is, a larger current can be flowed, it should exhibit higher tolerance than existing NTC thermistors. There is expected.
- the reverse fuse usage that is, the reverse usage of the PTC thermistor is also possible.
- a general NTC thermistor has been used, or a VO 2 ceramic exhibiting CTR characteristics has been used. Both of these utilize the fact that when the infrared ray is irradiated, the temperature rises at the surface layer portion and the resistance changes, and they are used as an infrared sensor. From such a principle, it is preferable that the resistance greatly changes when receiving infrared rays.
- the B constant is often used as an index of the change rate.
- the B constant is calculated by the following formula.
- B constant Ln (R 1 / R 2 ) / (1 / T 1 ⁇ 1 / T 2 )
- the unit of the resistors R 1 and R 2 is “ ⁇ ”
- the unit of the temperatures T 1 and T 2 is “K”.
- the B constant is about 4000 at most.
- VO 2 ceramics have a problem in that although a relatively large resistance change (B constant) can be obtained, the temperature range showing the resistance change is limited to room temperature to 60 ° C., and controllability and stability are poor.
- FIG. 4 schematically shows an infrared sensor 1 according to an embodiment of the present invention.
- infrared sensor 1 is represented by RBaMn 2 O 6 (R is at least one selected from Nd, Sm, Eu, Gd, Tb, Dy, Ho, and Y) and is a double perovskite.
- a flat element body 2 made of an oxide whose main component is an oxide conductor having a structure, and a pair of electrodes 3 and 4 formed on the upper surface of the element body 2 with a predetermined gap therebetween. Including the resistance element 5.
- the infrared sensor 1 further includes a source meter 6 serving as a power source for applying an electric field to the element body 2 through a pair of electrodes 3 and 4.
- the source meter 6 also serves as current measuring means for measuring the current flowing through the element body 2 when an electric field is applied between the electrodes 3 and 4.
- a trigger electric field of 100 V / cm or more is periodically applied to the surface layer portion 7 of the element body 2 through the electrodes 3 and 4 by the electric power supplied from the source meter 6.
- an element body 2 made of GdBaMn 2 O 6 ceramic is prepared, and two electrodes 3 and 4 are placed on the upper surface by a DC sputtering method with a gap of 100 ⁇ m.
- the resistance element 5 having the structure as shown in FIG.
- An infrared sensor 1 is configured using this resistance element 5, and at room temperature (25 ° C.), a voltage of 2.5 V (electric field strength: 250 V / cm) is regularly supplied from the source meter 6 to the electrodes 3 and 4. When this voltage was applied, the current flowing between the electrodes 3 and 4 was measured by the source meter 6.
- the B constant was 8725 in the temperature range of 30 ° C. to 35 ° C.
- the B constant was 12600 in the temperature range of 35 ° C. to 40 ° C.
- the B constant was 2500 when the electric field strength was 10 V / cm while using the same resistance element 5.
- the B constant of a general NTC thermistor is about 4000 at most as described above. That is, when the resistance element 5 is used under a high electric field strength of 250 V / cm, a B constant that is three times or more can be obtained as compared with a case where the electric field strength is 10 V / cm or a general NTC thermistor. Recognize.
- the sensitivity can be dramatically improved.
- the infrared sensor was operated near room temperature, but the sensor operating temperature can be designed in a wide range from room temperature to 200 ° C by selecting the distance between electrodes and / or the base material. is there. Therefore, the infrared sensor can be used not only as a human sensor at room temperature but also as a resistance bolometer such as a microwave oven.
- FIG. 5 is a block diagram showing an electric device including a resistance element for inrush current suppression.
- the electrical device 11 includes an AC power supply 12 and a protected circuit 13, and the AC power supply 12 supplies power to the protected circuit 13 via a rectifier 14.
- a resistor 16 for inrush current suppression is connected in series with the current line 15 for supplying power.
- a smoothing capacitor 17 is connected in parallel with the protected circuit 13.
- an NTC thermistor is often used as the resistance element 16 for the purpose of suppressing the inrush current.
- the NTC thermistor exhibits a high resistance immediately after the power is turned on after the power is turned off, and the resistance decreases due to self-heating after the power is turned on. Therefore, according to the NTC thermistor, there is an advantage that the power consumption can be reduced as compared with a general resistor whose resistance value hardly changes even when the temperature changes.
- the resistance element 16 for power thermistor use, in order to further improve the inrush current suppression effect and further reduce power consumption, the resistance element 16 exhibits a higher resistance immediately after the power is turned on from the standby time (when the power is turned off). Then, it is preferable that the resistance is further lowered as a result of self-heating. Therefore, the CTR material whose resistance changes drastically with temperature rise shows ideal characteristics for power thermistor applications.
- the reproducibility and stability of the VO 2 material known so far are as follows. There is a problem of lacking.
- the resistance element 16 is represented by RBaMn 2 O 6 (R is at least one selected from Nd, Sm, Eu, Gd, Tb, Dy, Ho, and Y) and has a double perovskite structure.
- R is at least one selected from Nd, Sm, Eu, Gd, Tb, Dy, Ho, and Y
- An element including an element body made of an oxide containing an oxide conductor as a main component and at least one pair of electrodes provided for applying an electric field to at least a part of the element body is used. Then, when an inrush current flows into the protected circuit 13, an electric field having an electric field strength of 100 V / cm or more is applied to the element body through the pair of electrodes.
- FIG. 6 is a cross-sectional view showing a preferred structure of the resistance element 16.
- resistance element 16 has a laminated structure. More specifically, the resistance element 16 includes an element body 21, and the element body 21 includes a plurality of laminated ceramic layers 22, and a plurality of internal electrodes 23 and 24 are provided along an interface between the ceramic layers 22. It is formed. Further, first and second external electrodes 25 and 26 are respectively formed on the end faces of the element body 21 facing each other.
- the internal electrodes 23 and 24 described above include a plurality of second internal electrodes electrically connected to the plurality of first internal electrodes 23 and the second external electrode 26 electrically connected to the first external electrode 25.
- the first and second internal electrodes 23 and 24 are alternately arranged in the stacking direction.
- the electric field strength applied to the element body 21 can be changed by changing the thickness of the ceramic layer 22 without being limited by the outer dimensions thereof. It is easy to design so that an electric field having an electric field strength of 100 V / cm or more is applied to the element body 21 when an inrush current flows to the element 13.
- GdBaMn 2 O 6 ceramic is used so that the resistance value at room temperature, which is commonly used as a power thermistor, is 8 ⁇ , and the planar dimension is 2
- a base body 21 having a laminated structure of 0.0 mm ⁇ 1.2 mm was produced.
- Pd is used as the conductive component of the internal electrodes 23 and 24, the total electrode area after firing is 0.2 mm 2, and the thickness of the ceramic layer 22 between the internal electrodes 23 and 24 is 130 ⁇ m.
- the transition temperature was about 150 ° C., and the resistance change rate was less than one digit.
- the rate of change in resistance was greatly improved, and the transition temperature was about 50 ° C.
- the resistance element 16 near the room temperature, the resistance element 16 exhibits a resistance of about 8 ⁇ when the power is turned off, and has a large resistance value when an inrush current is applied with an electric field strength of 250 V / cm when the power is turned on. It changed to show metal-insulator transition and became 0.8 ⁇ or less in the steady state, and it became possible to reduce power consumption. Therefore, the inrush current can be suppressed more efficiently than a general NTC thermistor, and it can be used as a power thermistor having excellent recovery characteristics.
- Barium carbonate (BaCO 3 ) and manganese oxide (Mn 3 O 4 ) are weighed, neodymium oxide (Nd 2 O 3 ), and samarium oxide (Sm 2 O 3 ) so that the composition of RBaMn 2 O 6 can be obtained after firing.
- At least one of (Y 2 O 3 ) is weighed so as to have the composition shown in Table 1, and further, a dispersant and ion-exchanged water are weighed and blended, and a PSZ ball having a diameter of 2 mm is used. Wet mixing was performed for 24 hours.
- an organic solvent, a dispersing agent and a PSZ ball having a diameter of 5 mm were added to the coarsely pulverized coarse powder, followed by pulverization treatment, and then a plasticizer and a binder were added to obtain a sheet forming slurry.
- the slurry was formed into a sheet having a thickness of about 60 ⁇ m by a doctor blade method, and the obtained green sheet was then cut into a strip having a predetermined size.
- a conductive paste film serving as an internal electrode was formed on the green sheet by applying a conductive paste containing Pt as a conductive component by a screen printing method.
- the green chip was subjected to binder removal treatment at a temperature of about 450 ° C., and then baked at a temperature of 1250 ° C. for 48 hours in a high purity Ar atmosphere (99.9999%). As a result, a sintered body having a structure in which a plurality of ceramic layers and internal electrodes were laminated was obtained.
- an Ag-containing paste was applied, followed by heat treatment at a temperature of 600 ° C. for 48 hours in an oxygen atmosphere. As a result, a resistance element according to each sample in which an external electrode by Ag baking was formed on the element body was obtained.
- the main component is a compound having a double perovskite structure in all samples. Became.
- RTC temperature dependence of electrical resistivity
- the RTC characteristic of the resistance element according to Sample 4 is shown in FIG. In FIG. 7, the respective transition temperatures (T CTR ) when the electric field strength is 25 V / cm, 250 V / cm, 500 V / cm, 750 V / cm, 1000 V / cm, 1250 V / cm, 1300 V / cm and 1500 V / cm. Is indicated by an arrow.
- Table 1 shows the transition temperature (T CTR ) for each sample when the electric field strength is 25 V / cm, 100 V / cm, 250 V / cm and 1500 V / cm, and the electric field strength is 25 V / cm.
- the resistance change ratio in cm is shown.
- TCTR was determined as follows.
- FIG. 8 shows a case where the electric field intensity is 25 V / cm and a case where the electric field intensity is 750 V / cm, among the RTC characteristics of the sample 4 shown in FIG.
- the temperature dependence of the resistance before and after the transition or before reaching the current limit value is simply approximated by a straight line (indicated by a dotted line), and the temperature corresponding to the position of the intersection is determined for convenience. , Defined as TCTR .
- Resistance change ratio (electric resistivity at a temperature 10 ° C. lower than T CTR ) / (electric resistivity at a temperature 10 ° C. higher than T CTR ) It was calculated by the following formula.
- T CTR is a constant transition according to the size of the ionic radius of the rare earth element. Indicates temperature.
- the electric field strength is larger than 100 V / cm, as the electric field strength increases, T CTR decreases, and as is clear from FIG. 7, the resistance change is smaller than the electric field strength smaller than 100 V / cm. Greatly improved.
- T CTR ” at “1500 V / cm” of Sample 1 was “not measurable” because the temperature bath provided for the measuring apparatus used could only be set to ⁇ 190 ° C. When CTR is below -190 ° C., it means that measurement was not possible. That is, “T CTR ” at “1500 V / cm” of Sample 1 means lower than ⁇ 190 ° C.
- FIG. 7 shows the RTC characteristic of the resistance element according to Sample 4.
- the electric field strengths are 25 V / cm, 250 V / cm, 500 V / cm, 750 V / cm, 1000 V / cm, 1250 V / cm, 1400 V / cm, and 1500 V / cm, respectively.
- T CTR is indicated by the arrows, these T CTR under each of the field strength are also shown in Table 2 below. A part of the data in Table 2 overlaps with the data in Table 1.
- T CTR changes as the applied electric field strength increases, and the higher the electric field strength, the lower the temperature of T CTR .
- FIG. 9 shows the result of measuring the current value with a voltage pulse (pulse width 50 milliseconds) for the resistance element according to Sample 4 with a current limit of 5 A and gradually changing the electric field strength at room temperature.
- the resistance gradually decreases at room temperature of 100 V / cm or more at room temperature while reaching a current limit of 5 A at an electric field intensity of 300 V / cm or more, although it is a short voltage pulse of 50 milliseconds. ing.
- the resistance change rate at that time reaches two digits or more, and it can be seen that when the electric field strength is used at 100 V / cm or more, a larger resistance change is exhibited and the response speed is very fast.
- the additive element such as Mn added to barium carbonate in order to obtain the composition of RBaMn 2 O 6 was in the form of an oxide, but in addition, in the form of carbonate, hydroxide, etc. It has been confirmed that similar results can be obtained.
- the Pt-containing conductive paste was used, but it has been confirmed that the same result can be obtained by using an Ag-Pd-containing conductive paste, a Pd-containing conductive paste, or the like.
- the top temperature holding time in the firing step is 48 hours, but it has been confirmed that the same result can be obtained even if it is changed within the range of 24 to 48 hours.
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Abstract
Description
ここで、抵抗R1およびR2の単位は「Ω」、温度T1およびT2の単位は「K」である。
抵抗変化比=(TCTRより10℃低い温度での電気抵抗率)/(TCTRより10℃高い温度での電気抵抗率)
の式によって求めた。
2,21 素体
3,4 電極
5,16 抵抗素子
7 表層部
8 赤外線
11 電気機器
12 交流電源
13 被保護回路
15 電流ライン
22 セラミック層
23,24 内部電極
25,26 外部電極
Claims (5)
- 化学式:RBaMn2O6(Rは、Nd、Sm、Eu、Gd、Tb、Dy、HoおよびYから選ばれる少なくとも1種。)で示される酸化物導電体を主成分とし、負の温度係数を有する素体と、前記素体の少なくとも一部に電界を印加するために設けられる、少なくとも1対の電極とを備える、抵抗素子であって、
前記1対の電極を通して前記素体に電界強度100V/cm以上の電界を印加して前記素体の抵抗を変化させるように使用する、抵抗素子。 - 前記1対の電極を通して前記素体に電界強度100V/cm以上の電界を印加した際の前記素体に流れる電流を測定するようにして、赤外線を検出するために使用する、請求項1に記載の抵抗素子。
- 当該抵抗素子を被保護回路への電流ラインに直列に接続し、前記被保護回路へ突入電流が流れた時に前記1対の電極を通して電界強度100V/cm以上の電界が前記素体に印加されるようにして、突入電流抑制用として使用する、請求項1に記載の抵抗素子。
- 化学式:RBaMn2O6(Rは、Nd、Sm、Eu、Gd、Tb、Dy、HoおよびYから選ばれる少なくとも1種。)で示される酸化物導電体を主成分とし、負の温度係数を有する素体と、前記素体の表層部に電界を印加するために設けられる、少なくとも1対の電極とを備える、抵抗素子、
前記1対の電極を通して前記素体に100V/cm以上の電界を印加するための電源、ならびに
前記電源から100V/cm以上の電界が印加された際に前記素体に流れる電流を測定する電流測定手段
を備え、
前記素体の表層部に受ける赤外線による温度変化がもたらす前記素体の抵抗変化を、前記電流測定手段を用いて電流変化として測定することによって検出するようにした、赤外線センサ。 - 被保護回路と、電源と、前記被保護回路へ前記電力を供給するための電流ラインとを備え、前記被保護回路への突入電流を抑制するための抵抗素子が前記電流ラインに直列に接続されている、電気機器であって、
前記抵抗素子は、化学式:RBaMn2O6(Rは、Nd、Sm、Eu、Gd、Tb、Dy、HoおよびYから選ばれる少なくとも1種。)で示される酸化物導電体を主成分とし、負の温度係数を有する素体と、前記素体の少なくとも一部に電界を印加するために設けられる、少なくとも1対の電極とを備え、
前記被保護回路へ突入電流が流れた時に電界強度100V/cm以上の電界が前記電極を通して前記素体に印加されるようにされている、電気機器。
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JP2011538403A JPWO2011052518A1 (ja) | 2009-10-26 | 2010-10-25 | 抵抗素子、赤外線センサおよび電気機器 |
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WO2012056797A1 (ja) * | 2010-10-27 | 2012-05-03 | 株式会社村田製作所 | 半導体セラミックおよび抵抗素子 |
JP2017520116A (ja) * | 2014-05-27 | 2017-07-20 | エプコス アクチエンゲゼルシャフトEpcos Ag | 電子デバイス |
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DE102015121982A1 (de) * | 2015-12-16 | 2017-06-22 | Epcos Ag | NTC-Keramik, elektronisches Bauelement zur Einschaltstrombegrenzung und Verfahren zur Herstellung eines elektronischen Bauelements |
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WO2012056796A1 (ja) * | 2010-10-27 | 2012-05-03 | 株式会社村田製作所 | 半導体セラミックおよび抵抗素子 |
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