WO2011044794A1 - 一种静电卡盘及其残余电荷的消除方法 - Google Patents

一种静电卡盘及其残余电荷的消除方法 Download PDF

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Publication number
WO2011044794A1
WO2011044794A1 PCT/CN2010/076158 CN2010076158W WO2011044794A1 WO 2011044794 A1 WO2011044794 A1 WO 2011044794A1 CN 2010076158 W CN2010076158 W CN 2010076158W WO 2011044794 A1 WO2011044794 A1 WO 2011044794A1
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Prior art keywords
charge
electrode
electrostatic chuck
release unit
charge release
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PCT/CN2010/076158
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English (en)
French (fr)
Inventor
张宝辉
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北京北方微电子基地设备工艺研究中心有限责任公司
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Application filed by 北京北方微电子基地设备工艺研究中心有限责任公司 filed Critical 北京北方微电子基地设备工艺研究中心有限责任公司
Priority to US13/501,169 priority Critical patent/US20120200981A1/en
Priority to KR1020127012218A priority patent/KR20130126449A/ko
Publication of WO2011044794A1 publication Critical patent/WO2011044794A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Definitions

  • the present invention is in the field of semiconductor fabrication, and more particularly to a method of supporting a static chuck of a wafer within a reaction chamber and eliminating residual charge on the electrostatic chuck. Background technique
  • the manufacturing process of an integrated circuit is a highly automated flow-through process, and most of the processing processes (such as etching, physical vapor deposition, and chemical vapor deposition) are completed in the reaction chamber, and the front and back processes are closely connected.
  • the smooth progress of each process will directly affect the production efficiency of the entire process.
  • a mechanical chuck and a vacuum chuck to fix the wafer is often caused by pressure or Fragmentation occurs due to collisions, which leads to interruption of the entire process and pollution, which in turn affects production efficiency and product yield.
  • FIG. 1 shows a schematic diagram of the operation of a conventional electrostatic chuck.
  • the electrostatic chuck is externally connected to a power source and includes a base 102 and two electrodes 401, 402 disposed within the base 102.
  • the electrodes 401, 402 are wrapped by an insulating layer and connected to both ends of the power source, wherein the first electrode 401 is connected to the negative pole of the power source, and the second electrode 402 is connected to the anode of the power source.
  • the power supply uses DC power.
  • a wafer ejector 103 is provided at a central position of the susceptor 102 for upward movement during the detachment process to lift the wafer 101 placed on top of the susceptor 102 for the robot to remove the wafer 101; or for the seating process The wafer 101 from the robot is placed on top of the susceptor 102 with a downward movement.
  • the wafer 101 is first placed on top of the electrostatic chuck 102; then the electrodes 401, 402 are connected to the power source to cause the first electrode 401 to accumulate a negative charge while the second electrode 402 accumulates a positive charge. These charges in turn respectively induce positive and negative charges in the regions corresponding to the electrodes 401, 402 on the wafer 101.
  • An electrostatic field is generated between the electrode and the wafer 101 by means of the electrode in the corresponding region and the opposite polarity of the charge generated by the wafer 101, and the wafer 101 is firmly adsorbed on the surface of the electrostatic chuck by the electrostatic attraction of the electrostatic field. Then, the wafer 101 is subjected to a processing process, and the wafer 101 is removed by the robot after the process is completed.
  • the wafer 101 is adsorbed to the surface of the electrostatic chuck by the electrostatic attraction between it and the electrostatic chuck.
  • the inductive charge on the wafer 101 must be removed after the processing to enable the wafer 101 to be successfully completed. The process of leaving.
  • the method is generally used to remove the induced charge on the wafer 101: that is, after the processing process is completed, a voltage opposite to the polarity of the voltage used in the process is applied to the electrodes 401, 402, that is, at the A positive voltage is applied to an electrode 401, a negative voltage is applied to the second electrode 402, and a charge opposite to the polarity of the charge carried by the process is induced on the wafer 101 to neutralize the induction of the wafer 101 during the foregoing process.
  • the charge that is, the voltage opposite to the polarity of the voltage applied by the process is applied to the two electrodes 401, 402 of the electrostatic chuck to release the static charge on the wafer 101. After the static charge is released, the wafer 101 is lifted up by the wafer ejector pin 103 until the robot removes the wafer 101.
  • the electrostatic charge on the electrodes and the wafer cannot be completely eliminated by applying the reverse voltage as described above.
  • the elimination of static charge is usually affected by various factors, such as process conditions, the level of the reverse voltage, the time when the reverse voltage is applied, etc., so when the electrostatic charge on the electrode and the wafer is removed in the above manner. It is difficult to overcome the influence of many of the above factors, and thus it is difficult to remove the static charge more thoroughly.
  • the presence of residual charge on the electrodes and wafers will The occurrence of the sticking phenomenon causes the wafer to be deflected or dropped during the lifting of the needle, so that the robot cannot take out the wafer.
  • the more residual charge the more severe the sticking phenomenon, so that fragmentation still occurs in severe cases, which affects the smooth progress of the process.
  • the present invention provides an electrostatic chuck and a method for eliminating the residual charge thereof, which can completely and quickly eliminate residual charges on a wafer and an electrode disposed in the electrostatic chuck, thereby eliminating the adhesive sheet and the debris. Phenomenon, avoiding process interruptions, thereby increasing production efficiency and product yield.
  • the present invention provides an electrostatic chuck comprising a base and an electrode disposed inside the base, the electrostatic chuck further comprising a charge release unit, the electrode optionally being disposed outside the electrostatic chuck a power source connection or connected to the charge release unit to connect the power source to obtain electrical energy during a processing process; and during charge release, the charge release unit is connected to release residual charge on the electrode, and further The residual charge on the processed workpiece carried by the electrostatic chuck is removed.
  • the charge release unit is a ground circuit, and the electrode is connected to the ground circuit to form a charge release path during charge release.
  • the electrodes are two electrodes, each of which is selectively connectable to the power source or a corresponding charge release unit.
  • the charge release unit includes a resistor, and in the charge release process, the resistor is electrically connected between the two electrodes to form a charge release loop.
  • a selection switch is disposed between the electrode and the power source and the charge release unit, the electrode Connecting the movable contact of the selection switch, the power source and the charge release unit are each independently connected to the static contact of the selection switch, and the electrode is selectively connected by the movable contact to make the electrode
  • the power source or charge release unit is selectively connected. Since the transfer switch has a simple structure and is convenient to operate, setting the electrode between the electrode and the power source or the charge release unit not only enables the electrode to be selectively connected between the power source and the charge release unit, but also makes the entire electrostatic chuck compact in structure and appearance. beautiful.
  • the present invention also provides a method of eliminating residual charge of an electrostatic chuck.
  • the electrostatic chuck includes a base, a charge release unit, and an electrode disposed inside the base, and the method includes the following steps: 1) placing a workpiece on the base during the processing process, and making the electrode Turning on the power, adsorbing the workpiece on the electrostatic chuck by means of electrostatic attraction between the electrode and the workpiece and performing a processing process; 2) applying a voltage applied to the electrode and the step 1) after the processing is completed a reverse voltage of opposite polarity to neutralize the charge generated by the electrode and the workpiece during the process; 3) cutting off the connection between the electrode and the power source, and connecting the electrode to the charge release unit to release the Residual charge on the electrode, thereby removing residual charge on the processed workpiece carried by the electrostatic chuck.
  • the reverse voltage applied in the step 2) is 500V ⁇ 2000V, and the application time is 2s ⁇ 6s, preferably 3s or 5s.
  • the charge release unit is a ground circuit, and in the step 3), the electrode is connected to the ground circuit to form a charge release path to release residual charge on the electrode.
  • the electrode is a double electrode
  • the charge release unit comprises a resistor, and a residual charge on the electrode in the step 3).
  • the resistance of the resistor is 5000 ⁇ ⁇ 10 ⁇ ⁇ , preferably ⁇ ⁇ ⁇ 2 ⁇ ⁇ .
  • connection time between the electrode and the charge release circuit is
  • the electrostatic chuck provided by the present invention is provided with a charge release unit, by means of the charge release sheet
  • the residual charge on the wafer carried by the internal electrodes of the electrostatic chuck and the electrostatic chuck can be completely and quickly released, thereby eliminating the aforementioned sticking and chipping phenomenon caused by the existence of the above residual charge, thereby avoiding process interruption. Therefore, the electrostatic chuck provided by the invention improves the stability of the operation of the device and the product yield; and shortens the release time of the residual charge of the electrostatic chuck, thereby improving the production efficiency.
  • the method for eliminating residual charge of an electrostatic chuck provided by the present invention, the residual charge on the wafer carried by the internal electrodes of the electrostatic chuck and the electrostatic chuck is also released completely and quickly by means of the charge release unit. Therefore, the method for eliminating residual charge of the electrostatic chuck provided by the invention can eliminate the sticking and chipping phenomenon conveniently and quickly, and avoid the process interruption, thereby improving the stability of the operation of the device and the product yield; and the method shortens the electrostatic card The release time of the residual charge of the disk increases the production efficiency.
  • Figure 1 is a working principle diagram of a common electrostatic chuck
  • FIG. 2 is a schematic structural view of an electrostatic chuck provided by the present invention.
  • FIG. 3 is a schematic structural view of another electrostatic chuck provided by the present invention.
  • the electrostatic chuck of the present invention includes a susceptor, an electrode disposed within the susceptor, and a charge releasing unit.
  • the electrode may be selectively connected to a power source disposed outside the electrostatic chuck or to a charge release unit.
  • the electrodes are connected to the power source to obtain electrical energy; during the charge release process, the electrodes are connected to the charge release unit to release residual charges on the electrodes, thereby removing residual charges on the processed workpiece carried by the electrostatic chuck.
  • the charge release unit may use a ground path and/or a resistance loop to eliminate residual charges on the electrodes and the wafer by means of a ground path and/or a resistance loop.
  • the electrostatic chuck provided with a charge release unit in the form of a ground via or a resistive loop is described in further detail below.
  • Embodiment 2 is a schematic structural diagram of an electrostatic chuck provided by Embodiment 1 of the present invention.
  • the charge release unit in this embodiment uses a ground path to eliminate residual charges on the electrodes and the wafer.
  • the electrostatic chuck of this embodiment includes a base 102, two electrodes 401, 402 (of course, the electrostatic chuck may also be provided with only one electrode), and two transfer switches 105, 106 (the changeover switch is a part of the dotted line in the figure) , the same as in Figure 3 below).
  • the two electrodes 401, 402 are disposed apart from each other inside the susceptor 102 and are covered by an insulating layer (an insulating layer is not shown), and are each connected to a changeover switch 105, 106 provided outside the susceptor 102, respectively.
  • the middle of the base 102 is provided with a passage through the base 102, and the wafer ejector 103 is movable up and down within the passage.
  • the change-over switches 105, 106 in this embodiment each include three contacts, i.e., one movable contact and two fixed contacts.
  • the moving contact 105a of the first changeover switch 105 is connected to the first electrode 401, the first stationary contact 105b is connected to the ground, and the second stationary contact 105c is connected to the positive pole of the power supply;
  • the movable contact 106a is connected to the second electrode 402, and its first stationary contact 106b is also connected to the ground, and the second stationary contact 106c is connected to the negative pole of the power source.
  • the power supply is powered by a high voltage DC power supply and is disposed outside of the base 102.
  • the moving contact 105a of the first changeover switch 105 is adjusted to communicate with the second stationary contact 105c of the first changeover switch 105, and at the same time, the movable contact 106a of the second changeover switch 106 is adjusted to be Communicating with the second stationary contact 106c of the second transfer switch 106, at this time,
  • the source supplies power to the electrodes 401, 402, causing electrostatic attraction between the electrodes 401, 402 and the wafer 101, and the electrostatic chuck starts operating.
  • the principle of generating electrostatic attraction is the same as that in the background art, and will not be described again here.
  • the movable contact 105a of the first transfer switch 105 is again adjusted to communicate with the first stationary contact 105b of the first transfer switch 105, and at the same time, the movement of the second transfer switch 106 is adjusted.
  • the contact 106a is in communication with the first stationary contact 106b of the second changeover switch 106.
  • the electrodes 401, 402 are both in communication with the ground to constitute a charge release path. The residual charge on the electrodes 401, 402 is released by the charge release path, thereby eliminating the residual charge on the wafer 101.
  • the electrodes 401, 402 can be selectively connected between the power source and the ground path by means of the changeover switches 105, 106, and the operation process is simple without increasing the complexity of the process.
  • Example 2
  • the electrostatic chuck provided in Embodiment 2 of the present invention As shown in Fig. 3, the charge-releasing unit in this embodiment includes a resistor R, and the two electrodes 401, 402 are connected via a resistor R to form a charge-releasing circuit. Otherwise, the other structure of the electrostatic chuck of this embodiment is the same as that of the electrostatic chuck of the first embodiment. Hereinafter, only the differences between the second embodiment and the first embodiment will be described.
  • the two ends of the resistor R are respectively connected to the first fixed contact 105b of the first changeover switch 105 and the first fixed contact 106b of the second changeover switch 106, that is, the second embodiment
  • the static contacts of the first changeover switch 105 and the second changeover switch 106 connected to the ground in the first embodiment are replaced with the resistor R.
  • the first electrode 401 and the second electrode 402 are selectively in communication with the power source and the resistor R via the first changeover switch 105 and the second changeover switch 106, respectively.
  • the movable contact 105a of the first changeover switch 105 is adjusted to be turned on with the first stationary contact 105b of the first changeover switch 105, while the movable contact 106a of the second changeover switch 106 is adjusted to be The first stationary contact 106b of the second changeover switch 106 is turned on. Therefore, the first electrode 401 and the second electrode 402 are connected by the resistor R and constitute a charge release loop, and the electrode is replaced by the resistor R The residual charge on 401, 402 is released, thereby eliminating residual charge on wafer 101.
  • the charge release unit may be completely disposed inside the susceptor 102.
  • the first transfer switch 105, the second transfer switch 106, and the resistor R in the above-described Embodiment 2 are disposed on the susceptor 102.
  • a knob or a slider respectively connecting the movable contacts of the first changeover switch 105 and the second changeover switch 106 is disposed on the surface of the base 102, and the inside of the base 102 is used as a charge release unit by rotating the knob or dialing the slider.
  • the resistor R is connected/disconnected to the changeover switch moving contact.
  • the charge release unit may also be partially/all disposed outside the susceptor 102, for example, the first transfer switch 105 and the second transfer switch 106 are disposed inside the susceptor 102, and the resistor R in the above embodiment 2 is disposed at The base 102 is externally disposed, and the terminals of the base 102 are respectively connected with the terminals of the static contacts 105b and 106b, so that the resistor R disposed outside the base 102 is connected to the terminal to realize the resistor R and the static contact.
  • connection of 105b and 106b causes the electrode to be selectively connected to the power source or to the resistor R as the charge release unit by means of the action of the first changeover switch 105 and the second changeover switch 106; for example, the first changeover switch 105 And the second transfer switch 106 is disposed inside the base 102, and the connection terminals respectively connecting the static contacts 105b and 106b are disposed on the surface of the base 102, and the connection terminals are grounded, so that the static contacts 105b and 106b can be realized.
  • Ground connection by means of the action of the first transfer switch 105 and the second transfer switch 106 moving the contacts, the electrodes are selectively connected to the power source or connected as electricity Release ground circuit unit.
  • the electrostatic chuck provided by the present invention is not limited to the case where the charge releasing unit is disposed inside the susceptor, but also includes the case where all or part of the charge releasing unit is disposed outside the susceptor.
  • the electrodes of the electrostatic chuck may be selectively connected to the charge release unit or to a power source disposed outside the electrostatic chuck by manual or automatic means.
  • the electrode can be processed in each process by a preset program. After the process, the connection to the power supply is automatically disconnected and connected to the charge release unit to enter the charge release process to release the residual charge on the electrode, thereby removing the residual charge on the processed workpiece carried by the electrostatic chuck.
  • the present invention also provides a method for eliminating residual charge of an electrostatic chuck, which utilizes a charge release unit of an electrostatic chuck to remove residual charges on the internal electrodes of the wafer and the pedestal, thereby avoiding sticking and chipping, and further Reduce process interruptions and increase production efficiency.
  • the method for eliminating residual charge of an electrostatic chuck specifically includes the following steps:
  • the transfer switch is adjusted to connect the electrode to the power source, and the wafer is attracted to the susceptor of the electrostatic chuck by electrostatic attraction between the electrode and the wafer, and then The processing process begins on the wafer.
  • step 2) After the processing is completed, change the polarity of the power supply, and apply a reverse voltage of 500V-2000V opposite to the polarity of the voltage applied in step 1) on the electrode.
  • the pressing time of the reverse voltage is 2s- 6s, preferably 3s and 5s, to neutralize the charge generated on the electrode and on the wafer during step 1).
  • the charge release unit is a ground circuit
  • the on-time of the electrode and the ground circuit is 0.5s ⁇ 10s, such as Is or 2s
  • the charge release unit is a loop composed of resistors
  • the resistance should be 5000 ⁇ 10 ⁇ , preferably 1 ⁇ 2 ⁇
  • the time between the electrode and the resistance loop is also 0.5s ⁇ 10s, such as Is or 2s.
  • the electrostatic chuck provided by the present invention and the method for eliminating the residual charge thereof release the residual charge on the electrode and the wafer relatively quickly by means of the charge release unit, thereby eliminating the phenomenon of sticking and chipping, thereby avoiding process interruption. , improve production efficiency.
  • the residual charge elimination method provided by the present invention is simple, convenient, and easy to implement.

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Description

一种静电卡盘及其残余电荷的消除方法
技术领域
本发明属于半导体制造领域， 具体涉及一种在反应腔室内支撑晶片的静 电卡盘以及消除静电卡盘上的残余电荷的方法。 背景技术
从第一个晶体管问世的半个多世纪以来， 半导体技术已经在各个领域影 响着人们的生活， 推动着人类文明的发展， 创造着无法估量的巨大产业。 而 集成电路的小型化和低功耗提高了半导体的需求， 然而， 伴随资本投入的增 加， 集成电路工艺开发成本、 制造成本上升等问题越来越突出。 因此， 提高 效率、 降低成本成为生产企业关心的问题。
通常， 集成电路的制造过程是一个高度自动化的流水作业过程， 加工处 理工艺 （如刻蚀技术、 物理气相沉积和化学气相沉积等） 多数是在反应腔室 内完成， 而且前后工序衔接紧密， 因此， 各道工序能否顺利进行将直接影响 着整个工艺的生产效率。 而且， 在反应腔室内对诸如晶片等的半导体器件进 行加工处理时， 通常需要借助于机械卡盘和真空卡盘来固定晶片， 然而， 利 用机械卡盘和真空卡盘来固定晶片常因压力或碰撞而发生碎片现象， 从而导 致整个工艺的中断并造成污染， 进而影响生产效率和产品良率。
因此， 人们设计了静电卡盘来固定晶片。 它是利用静电引力将晶片固定 在卡盘上， 可以减少碎片现象， 同时还可增大晶片的有效加工面积， 并减少 晶片表面腐蚀物颗粒的沉积。 图 1示出的是一种常见的静电卡盘的工作原理 图。 如图所示， 该静电卡盘外接电源， 并且包括基座 102以及设于基座 102 内的两个电极 401、 402。 电极 401、 402被绝缘层包裹并与电源的两端连接， 其中， 第一电极 401与电源的负极相连， 第二电极 402与电源的正极相连， 电源釆用直流电源。 在基座 102的中心位置设有晶片顶针 103 , 用于在离座 过程中向上运动而将放置在基座 102顶部的晶片 101顶起， 以便机械手取走 该晶片 101 ; 或者用于在入座过程中向下运动而将来自机械手的晶片 101放 置在基座 102的顶部。
在实际加工处理工艺过程中，先将晶片 101放置在静电卡盘 102的顶部； 然后将电极 401、 402与电源接通， 使第一电极 401积聚负电荷， 同时第二电 极 402上积聚正电荷，这些电荷又在晶片 101上与电极 401、 402相对应的区 域内分别对应地感应出正电荷和负电荷。 借助于对应区域内的电极和晶片 101所产生的极性相反的电荷而在电极和晶片 101之间产生静电场， 通过该 静电场的静电引力而将晶片 101牢固地吸附在静电卡盘的表面； 而后， 对晶 片 101实施加工处理工艺， 并在工艺完成后由机械手将晶片 101取走。
如上所述， 晶片 101是借助于其与静电卡盘之间的静电引力而吸附于静 电卡盘的表面， 然而众所周知， 在加工处理工艺之后必须去除晶片 101上的 感应电荷才能使晶片 101顺利完成离座过程。 目前常釆用这样的方法来去除 晶片 101上的感应电荷： 即， 在完成加工处理工艺后， 在电极 401、 402上施 加与工艺过程所釆用电压的极性相反的电压， 即， 在第一电极 401上施加正 电压， 在第二电极 402上施加负电压， 而在晶片 101上感应出与工艺过程所 带电荷极性相反的电荷， 以中和晶片 101在前述工艺过程中所感应的电荷， 也就是说，向静电卡盘的两个电极 401、 402施加与工艺过程所施加电压的极 性相反的电压， 以释放晶片 101上的静电荷。 并待静电荷释放后， 由晶片顶 针 103将晶片 101顶起， 以待机械手取走晶片 101。
然而在实际应用中， 通过上述施加反向电压的方式并不能将电极和晶片 上的静电荷完全消除。这是因为：静电荷的消除通常会受到多种因素的影响， 例如工艺条件、 反向电压的高低、 施加反向电压的时间等， 因此釆用上述方 式来去除电极和晶片上的静电荷时， 难以克服上述诸多因素的影响， 因而也 就难以较为彻底地去除所述静电荷。 而电极和晶片上存在残余电荷将会弓 I起 粘片现象的发生， 并导致晶片在升针时发生偏离或掉片， 从而使机械手无法 取出晶片。 而且， 残余电荷越多粘片现象越严重， 以致严重时仍会发生碎片 现象， 影响工艺的顺利进行。
为此， 本领域技术人员试图通过大量实验以获得工艺与反向电压各参数 之间的对应关系， 并期望最终彻底消除电极和晶片上的残余电荷， 但是在实 际应用中， 该方法不仅增加了设备复杂性、 延长了生产周期， 而且也不能实 现残余电荷的彻底消除。 因此， 目前迫切需要本领域技术人员能够提供一种 可以较为彻底地去除电极和晶片上的残余电荷的方法或装置。 发明内容
为解决上述问题， 本发明提供一种静电卡盘及其残余电荷的消除方法， 其能够较为彻底、快速地消除晶片和设置在静电卡盘内的电极上的残余电荷， 从而消除粘片和碎片现象， 避免工艺中断， 进而提高生产效率和产品良率。
为此， 本发明提供一种静电卡盘， 包括基座和设置于所述基座内部的电 极， 该静电卡盘还包括电荷释放单元， 所述电极可选择地与设置在静电卡盘 外部的电源连接或者与所述电荷释放单元连接， 以在加工工艺过程中连接所 述电源而获得电能； 并在电荷释放过程中， 连接所述电荷释放单元以释放掉 所述电极上的残余电荷， 进而去除该静电卡盘所承载的加工工件上的残余电 荷。
其中， 所述电荷释放单元为接地电路， 在电荷释放过程中， 所述电极与 所述接地电路连通构成电荷释放通路。
其中， 所述电极为双电极， 每一个电极均可选择地连接所述电源或对应 的电荷释放单元。
其中， 所述电荷释放单元包括电阻， 在电荷释放过程中， 所述电阻在所 述两个电极之间电连通而构成电荷释放回路。
其中， 在所述电极与电源和电荷释放单元之间设置选择开关， 所述电极 连接所述选择开关的动触头， 所述电源和电荷释放单元各自独立连接所述选 择开关的静触头， 借助于所述动触头选择性地连通所述静触头而使所述电极 可选择地连接所述电源或电荷释放单元。 由于转换开关的结构简单， 操作方 便， 将其设置在电极与电源或电荷释放单元之间不仅可以使电极在电源和电 荷释放单元之间实现选择连通，而且使整个静电卡盘的结构紧凑，外观优美。
作为另一个技术方案， 本发明还提供一种静电卡盘残余电荷的消除方 法。所述静电卡盘包括基座、 电荷释放单元以及设置于所述基座内部的电极， 所述方法包括下述步骤： 1 )在加工工艺过程中， 将工件放置在基座上， 并使 电极接通电源， 借助于所述电极和工件之间的静电引力而将工件吸附在静电 卡盘上并实施加工工艺； 2 )加工工艺完成后， 对所述电极施加与步骤 1 )所 施加的电压极性相反的反向电压， 以中和所述电极和工件在工艺过程中所产 生的电荷； 3 )切断所述电极与电源之间的连接，并使电极连接电荷释放单元， 以释放掉所述电极上的残余电荷， 进而去除该静电卡盘所承载的加工工件上 的残余电荷。
其中， 所述步骤 2 ) 中所施加的反向电压为 500V ~ 2000V, 并且施加时 间为 2s ~ 6s, 优选 3s或 5s。
其中， 所述电荷释放单元为接地电路， 在所述步骤 3 ) 中， 将所述电极 与所述接地电路连通构成电荷释放通路， 以释放掉所述电极上的残余电荷。
其中， 所述电极为双电极， 所述电荷释放单元包括电阻， 在所述步骤 3 ) 所述电极上的残余电荷。
其中， 所述电阻的阻值为 5000 Ω ~ 10ΜΩ , 优选 ΙΜΩ ~ 2ΜΩ。
其中， 在所述步骤 3 ) 中， 所述电极与所述电荷释放电路的连通时间为
0.5s~10s。
本发明具有以下有益效果：
由于本发明提供的静电卡盘设置有电荷释放单元， 借助于该电荷释放单 元可以将静电卡盘内部电极和静电卡盘所承载的晶片上的残余电荷较为彻 底、 快速地释放掉， 从而消除因上述残余电荷存在而导致的前述粘片和碎片 现象， 从而避免工艺中断。 因此， 本发明提供的静电卡盘提高了设备运行的 稳定性和产品良率； 并且缩短了静电卡盘残余电荷的释放时间， 提高了生产 效率。
类似地， 本发明提供的静电卡盘残余电荷的消除方法中， 同样借助于电 荷释放单元将静电卡盘内部电极和静电卡盘所承载的晶片上的残余电荷较为 彻底、 快速地释放掉。 因此， 本发明提供的静电卡盘残余电荷的消除方法能 够方便快捷地消除粘片和碎片现象， 并避免工艺中断， 进而提高了设备运行 的稳定性和产品良率； 并且该方法缩短了静电卡盘残余电荷的释放时间， 提 高了生产效率。 附图说明
图 1为一种常见的静电卡盘的工作原理图；
图 2为本发明提供的一种静电卡盘的结构示意图； 以及
图 3为本发明提供的另一种静电卡盘的结构示意图。
图中： 101-晶片 102-基座 103-晶片顶针 401-第一电极 402-第二电 极 105-第一转换开关 105a-动触头 105b-第一静触头 105c-第二静触头 106-第二转换开关 106a-动触头 106b-第一静触头 106c-第二静触头 R- 电阻 具体实施方式
为使本领域技术人员更好地理解本发明的技术方案， 下面结合附图和具 体实施方式对本发明提供的静电卡盘及其残余电荷的消除方法进行详细描 述。
本发明中的静电卡盘包括基座、 设置在基座内的电极和电荷释放单元。 电极可选择性地与设置在静电卡盘外部的电源连接或者与电荷释放单元连 接。 在加工工艺过程中， 电极连接电源以获得电能； 在电荷释放过程中， 电 极连接电荷释放单元以释放电极上的残余电荷， 进而去除静电卡盘所承载的 加工工件上的残余电荷。 其中， 电荷释放单元可以釆用接地通路和 /或电阻回 路， 借助接地通路和 /或电阻回路来消除上述电极和晶片上的残余电荷。 下面 分别对设置有接地通路或电阻回路形式的电荷释放单元的静电卡盘作进一步 详细描述。
实施例 1
请参见图 2, 为本发明实施例 1提供的静电卡盘结构示意图。如图所示， 本实施例中的电荷释放单元釆用接地通路方式来消除电极和晶片上的残余电 荷。 本实施例的静电卡盘包括基座 102、 两个电极 401、 402 (当然， 静电卡 盘也可以仅设置一个电极）、 两个转换开关 105、 106 (转换开关为图中虚线 框内的部分，下述图 3中同理）。 两个电极 401、 402彼此分开设置在基座 102 的内部并被绝缘层包裹（图中未示出绝缘层）， 而且各自分别与设置在基座 102外部的转换开关 105、 106连接。 基座 102中部设有贯穿该基座 102的通 道， 晶片顶针 103可在该通道内上下运动。
本实施例中的转换开关 105、 106均包括三个触头， 即， 一个动触头和 两个静触头。 其中， 第一转换开关 105的动触头 105a与第一电极 401连接， 它的第一静触头 105b与地连接， 而第二静触头 105c与电源的正极连接； 第 二转换开关 106的动触头 106a与第二电极 402连接， 它的第一静触头 106b 也与地连接， 而第二静触头 106c与电源的负极连接。 电源釆用高压直流电源 且设置在基座 102外部。
通过上述静电卡盘的设计方式， 可以方便地实现以下操作：
在进行工艺加工过程中， 调节第一转换开关 105的动触头 105a使其与 第一转换开关 105 的第二静触头 105c连通， 同时， 调节第二转换开关 106 的动触头 106a使其与第二转换开关 106的第二静触头 106c连通， 此时， 电 源向电极 401、 402供电， 使电极 401、 402与晶片 101之间产生静电引力， 该静电卡盘开始工作。 产生静电引力的原理与背景技术中的相同， 这里不再 赘述。
在加工工艺完成后， 释放残余电荷时， 再次调节第一转换开关 105的动 触头 105a使其与第一转换开关 105的第一静触头 105b连通， 同时， 调节第 二转换开关 106的动触头 106a使其与第二转换开关 106的第一静触头 106b 连通， 此时， 电极 401、 402均与地连通而各自构成电荷释放通路。 通过该电 荷释放通路将电极 401、 402上的残余电荷释放，进而将晶片 101上的残余电 荷消除。
在本实施例中， 借助转换开关 105、 106可以使电极 401、 402方便地在 电源和接地通路之间选择连通， 操作过程简单， 不增加工艺的复杂性。 实施例 2
本发明实施例 2提供的静电卡盘。 如图 3所示， 本实施例中的电荷释放 单元包括电阻 R, 借助电阻 R将两个电极 401、 402连通构成电荷释放回路。 除此之外， 本实施例静电卡盘的其它结构与实施例 1静电卡盘的结构相同。 下面， 仅对本实施例 2与实施例 1的不同之处进行描述。
在本实施例 2中， 电阻 R的两端分别各自与第一转换开关 105的第一静 触头 105b和第二转换开关 106的第一静触头 106b连接， 也就是说， 本实施 例 2是将实施例 1中与地连接的第一转换开关 105和第二转换开关 106的静 触头替换为与电阻 R连接。 由此， 第一电极 401和第二电极 402分别借助第 一转换开关 105和第二转换开关 106可选择性地与电源和电阻 R连通。
当释放残余电荷时， 调节第一转换开关 105的动触头 105a使其与第一 转换开关 105的第一静触头 105b接通，同时调节第二转换开关 106的动触头 106a使其与第二转换开关 106的第一静触头 106b接通。 因此， 第一电极 401 和第二电极 402被电阻 R连通并构成电荷释放回路， 借助于电阻 R将电极 401、 402上的残余电荷释放， 进而消除晶片 101上的残余电荷。
需要指出的是， 在实际应用中， 电荷释放单元可以完全设置在基座 102 内部， 例如， 将上述实施例 2中的第一转换开关 105、 第二转换开关 106和 电阻 R设置在基座 102内部， 而仅在基座 102表面设置分别连接第一转换开 关 105和第二转换开关 106动触头的旋钮或滑块， 通过转动旋钮或拨动滑块 来使基座 102内部作为电荷释放单元的电阻 R与转换开关动触头连接 /断开。 当然， 电荷释放单元也可以部分 /全部设置在基座 102外部， 例如， 将第一转 换开关 105和第二转换开关 106设置在基座 102内部， 而将上述实施例 2中 的电阻 R设置在基座 102外部，并在基座 102表面设置分别连接静触头 105b 和 106b的接线端子， 使设置在基座 102外部的上述电阻 R与所述接线端子 连接即可实现电阻 R与静触头 105b和 106b的连接，借助于第一转换开关 105 和第二转换开关 106动触头的动作使电极选择性地连接电源或者连接作为电 荷释放单元的电阻 R; 再如， 将第一转换开关 105和第二转换开关 106设置 在基座 102内部， 在基座 102表面设置分别连接静触头 105b和 106b的接线 端子， 并使所述接线端子接地， 这样即可实现静触头 105b和 106b与地的连 接， 借助于第一转换开关 105和第二转换开关 106动触头的动作使电极选择 性地连接电源或者连接作为电荷释放单元的接地电路。
进一步需要指出的是， 无论电荷释放单元设置在静电卡盘基座的内部还 是外部， 只要是静电卡盘设置有电荷释放单元， 并且借助于该电荷释放单元 可以较为快速彻底地消除上述电极和晶片上的残余电荷， 则都视为本发明的 保护范围。 也就是说， 本发明提供的静电卡盘并不仅仅局限于电荷释放单元 设置在基座内部的情形， 而是也包括电荷释放单元全部或部分设置在基座外 部的情形。
还需要指出的是， 在实际应用中， 可以通过手动方式或者自动方式而使 静电卡盘的电极选择性地连接电荷释放单元或者连接设置在静电卡盘外部的 电源。 当釆用自动方式时， 例如， 可以通过预设的程序而使电极在每一加工 工艺过程之后自动断开与电源的连接转而连接至电荷释放单元， 从而进入到 电荷释放过程中， 以释放电极上的残余电荷， 进而去除静电卡盘所承载的加 工工件上的残余电荷。
此外， 本发明还提供一种静电卡盘残余电荷的消除方法， 其利用静电卡 盘所具有的电荷释放单元来去除晶片和基座内部电极上的残余电荷， 从而避 免粘片和碎片现象， 进而减少工艺中断， 提高生产效率。
本发明提供的静电卡盘残余电荷的消除方法具体包括以下步骤：
1 )在加工工艺过程中， 将晶片放置在基座上， 调节转换开关使电极与 电源接通， 借助于电极与晶片之间的静电引力将晶片吸附在静电卡盘的基座 上， 然后在晶片上开始加工工艺过程。
2 )待加工工艺完成后，转变电源极性，在电极上施加大小为 500V-2000V 的与步骤 1 )所施加的电压极性相反的反向电压， 该反向电压的施压时间为 2s-6s, 优选 3s和 5s, 以此来中和电极和晶片上在步骤 1 ) 时所产生的电荷。
3 )调节转换开关的动触头， 使电极与电荷释放单元接通， 释放电极上 的残余电荷， 进而释放晶片上的残余电荷。 当电荷释放单元为接地电路时， 电极与接地电路的接通时间为 0.5s ~ 10s, 如 Is或 2s; 当电荷释放单元为电 阻构成的回路时， 电阻阻值应为 5000Ω~10ΜΩ , 优选为 1~2ΜΩ , 电极与电 阻回路接通的时间也为 0.5s ~ 10s, 如 Is或 2s。
综上所述， 本发明提供的静电卡盘及其残余电荷的消除方法借助电荷释 放单元， 将电极和晶片上的残余电荷较为彻底地快速释放， 消除了粘片和碎 片现象， 从而避免工艺中断， 提高了生产效率。 本发明提供的残余电荷消除 方法操作简单、 方便， 且易于实现。
可以理解的是， 以上实施方式仅仅是为了说明本发明的原理而釆用的示 例性实施方式， 然而本发明并不局限于此。 对于本领域内的普通技术人员而 言， 在不脱离本发明的精神和实质的情况下， 可以做出各种变型和改进， 这 些变型和改进也视为本发明的保护范围。

Claims

UP-101064-00 利 要 求 书
1. 一种静电卡盘，包括基座和设置于所述基座内部的电极，其特征在于， 该静电卡盘还包括电荷释放单元， 所述电极可选择地与设置在静电卡盘外部 的电源连接或者与所述电荷释放单元连接， 以在加工工艺过程中连接所述电 源而获得电能； 并在电荷释放过程中， 连接所述电荷释放单元以释放掉所述 电极上的残余电荷， 进而去除该静电卡盘所承载的加工工件上的残余电荷。
2. 根据权利要求 1所述的静电卡盘， 其特征在于， 所述电荷释放单元为 接地电路， 在电荷释放过程中， 所述电极与所述接地电路连通构成电荷释放 通路。
3. 根据权利要求 1所述的静电卡盘， 其特征在于， 所述电极为双电极， 每一个电极均可选择地连接所述电源或对应的电荷释放单元。
4. 根据权利要求 3所述的静电卡盘， 其特征在于， 所述电荷释放单元包 括电阻， 在电荷释放过程中， 所述电阻在所述两个电极之间电连通而构成电 荷释放回路。
5. 根据权利要求 1至 4中任意一项所述的静电卡盘， 其特征在于， 在 所述电极与电源和电荷释放单元之间设置选择开关， 所述电极连接所述选择 开关的动触头， 所述电源和电荷释放单元各自独立连接有所述选择开关的静 触头， 借助于所述动触头选择性地连通所述静触头而使所述电极可选择地连 接所述电源或电荷释放单元。
6. 一种静电卡盘残余电荷的消除方法，其特征在于， 所述静电卡盘包括 基座、 电荷释放单元以及设置于所述基座内部的电极， 所述方法包括下述步 骤：
1 )在加工工艺过程中， 将工件放置在基座上， 并使电极接通电源， 借 助于所述电极和工件之间的静电引力而将工件吸附在静电卡盘上并实施加工 工艺；
2 )加工工艺完成后， 对所述电极施加与步骤 1 )所施加的电压极性相反 的反向电压， 以中和所述电极和工件在工艺过程中所产生的电荷；
3 )切断所述电极与电源之间的连接， 并使电极连接电荷释放单元， 以 释放掉所述电极上的残余电荷， 进而去除该静电卡盘所承载的工件上的残余 电荷。
7. 根据权利要求 6所述的静电卡盘残余电荷的消除方法， 其特征在于， 所述步骤 2 )中所施加的反向电压为 500 V ~ 2000 V,并且施加时间为 2s ~ 6s。
8. 根据权利要求 6所述的静电卡盘残余电荷的消除方法， 其特征在于， 所述电荷释放单元为接地电路， 在所述步骤 3 ) 中， 将所述电极与所述接地 电路连通构成电荷释放通路， 以释放掉所述电极上的残余电荷。
9. 根据权利要求 6所述的静电卡盘残余电荷的消除方法， 其特征在于， 所述电极为双电极， 所述电荷释放单元包括电阻， 在所述步骤 3 ) 中， 使所 上的残余电荷。
10. 根据权利要求 9所述的静电卡盘残余电荷的消除方法，其特征在于， 所述电阻的阻值为 5000Ω ~ 10ΜΩ。
11. 根据权利要求 6所述的静电卡盘残余电荷的消除方法，其特征在于， 在所述步骤 3) 中， 所述电极与所述电荷释放电路的连通时间为 0.5s~10s。
PCT/CN2010/076158 2009-10-12 2010-08-19 一种静电卡盘及其残余电荷的消除方法 WO2011044794A1 (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108535620A (zh) * 2017-03-02 2018-09-14 叶秀慧 应用静电载具测试半导体制品的机构
CN117174646A (zh) * 2023-11-03 2023-12-05 南通莱欧电子科技有限公司 一种半导体生产用静电消除设备

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103107080B (zh) * 2013-01-11 2017-02-08 无锡华润上华半导体有限公司 一种解决深沟槽刻蚀工艺中圆片表面糊胶的刻蚀方法
US9101038B2 (en) * 2013-12-20 2015-08-04 Lam Research Corporation Electrostatic chuck including declamping electrode and method of declamping
TWI595557B (zh) * 2014-02-28 2017-08-11 愛發科股份有限公司 電漿蝕刻方法、電漿蝕刻裝置、電漿處理方法以及電漿處理裝置
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CN111952231A (zh) * 2019-05-14 2020-11-17 北京北方华创微电子装备有限公司 电荷传输装置及相关等离子体系统
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5790365A (en) * 1996-07-31 1998-08-04 Applied Materials, Inc. Method and apparatus for releasing a workpiece from and electrostatic chuck
JP2007311399A (ja) * 2006-05-16 2007-11-29 Sumitomo Osaka Cement Co Ltd 静電チャック
CN101136351A (zh) * 2006-08-30 2008-03-05 爱德牌工程有限公司 静电夹盘、使用该夹盘的基板处理设备及基板处理方法
CN101221893A (zh) * 2007-01-12 2008-07-16 北京北方微电子基地设备工艺研究中心有限责任公司 一种促进半导体晶片上静电电荷消散的方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5708556A (en) * 1995-07-10 1998-01-13 Watkins Johnson Company Electrostatic chuck assembly
JP2001144168A (ja) * 1999-11-16 2001-05-25 Nikon Corp 静電チャック、それを有する荷電粒子線露光装置、ウエハ保持方法及びそれを用いたデバイス製造方法
EP1359466A1 (en) * 2002-05-01 2003-11-05 ASML Netherlands B.V. Chuck, lithographic projection apparatus, method of manufacturing a chuck and device manufacturing method
US20030210510A1 (en) * 2002-05-07 2003-11-13 Hann Thomas C. Dynamic dechucking
JP2006179693A (ja) * 2004-12-22 2006-07-06 Shin Etsu Chem Co Ltd ヒータ付き静電チャック
US7535688B2 (en) * 2005-03-25 2009-05-19 Tokyo Electron Limited Method for electrically discharging substrate, substrate processing apparatus and program
JP5044395B2 (ja) * 2005-05-20 2012-10-10 筑波精工株式会社 静電保持装置及びそれを用いた静電ピンセット
US8422193B2 (en) * 2006-12-19 2013-04-16 Axcelis Technologies, Inc. Annulus clamping and backside gas cooled electrostatic chuck
US7385799B1 (en) * 2007-02-07 2008-06-10 Axcelis Technology, Inc. Offset phase operation on a multiphase AC electrostatic clamp
JP5112808B2 (ja) * 2007-10-15 2013-01-09 筑波精工株式会社 静電型補強装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5790365A (en) * 1996-07-31 1998-08-04 Applied Materials, Inc. Method and apparatus for releasing a workpiece from and electrostatic chuck
JP2007311399A (ja) * 2006-05-16 2007-11-29 Sumitomo Osaka Cement Co Ltd 静電チャック
CN101136351A (zh) * 2006-08-30 2008-03-05 爱德牌工程有限公司 静电夹盘、使用该夹盘的基板处理设备及基板处理方法
CN101221893A (zh) * 2007-01-12 2008-07-16 北京北方微电子基地设备工艺研究中心有限责任公司 一种促进半导体晶片上静电电荷消散的方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108535620A (zh) * 2017-03-02 2018-09-14 叶秀慧 应用静电载具测试半导体制品的机构
CN117174646A (zh) * 2023-11-03 2023-12-05 南通莱欧电子科技有限公司 一种半导体生产用静电消除设备
CN117174646B (zh) * 2023-11-03 2024-03-12 南通莱欧电子科技有限公司 一种半导体生产用静电消除设备

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