WO2011043407A1 - イオンビームアシストスパッタ装置及びイオンビームアシストスパッタ方法 - Google Patents
イオンビームアシストスパッタ装置及びイオンビームアシストスパッタ方法 Download PDFInfo
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- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 110
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 67
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/3442—Applying energy to the substrate during sputtering using an ion beam
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0632—Intermediate layers, e.g. for growth control
Definitions
- the present invention relates to an ion beam assisted sputtering apparatus and an ion beam assisted sputtering method used for manufacturing a substrate for an oxide superconducting conductor.
- the RE-123 oxide superconducting conductor (REBa 2 Cu 3 O 7-X : RE is one of rare earth elements including Y) exhibits excellent superconductivity at a liquid nitrogen temperature or higher, and is therefore extremely promising in practical use. There is a strong demand for processing this into a wire and using it as a conductor for power supply.
- a conductor used for such an RE-123 oxide superconducting conductor as shown in FIG. 7, an intermediate layer formed on a tape-like metal substrate 101 by an IBAD (Ion-Beam-Assisted Deposition) method. 102, and a structure in which a cap layer 103 and an oxide superconducting layer 104 are stacked in this order are known (for example, see Patent Document 1 below).
- the intermediate layer 102 and the cap layer 103 are provided to control the crystal orientation of the oxide superconducting layer 104. That is, the oxide superconductor has an electric anisotropy that it is easy for electricity to flow in the a-axis direction and the b-axis direction of its crystal axis, but it is difficult for electricity to flow in the c-axis direction. Therefore, when a conductor is formed using this oxide superconductor, the oxide superconductor layer 104 needs to have the a-axis or b-axis oriented in the direction in which electricity flows and the c-axis oriented in other directions. is there.
- the IBAD method is widely known as a technique for forming the intermediate layer 102 used in this kind of oxide superconducting conductor.
- the intermediate layer formed by the IBAD method is a material whose physical characteristic values such as a coefficient of thermal expansion and a lattice constant indicate intermediate values between the metal substrate 101 and the oxide superconducting layer 104, for example, MgO, YSZ ( Yttria stabilized zirconium), SrTiO 3 and the like.
- Such an intermediate layer 102 functions as a buffer layer that alleviates the difference in physical properties between the metal substrate 101 and the oxide superconducting layer 104.
- the crystal of the intermediate layer 102 has a high degree of in-plane orientation, and functions as an orientation control film that controls the orientation of the cap layer 103.
- the orientation mechanism of the intermediate layer 102 formed by the IBAD method will be described.
- the intermediate layer forming apparatus based on the IBAD method has a traveling system for the metal substrate 101 to travel in the longitudinal direction thereof, and the surface thereof is inclined with respect to the surface of the metal substrate 1.
- the inside of the vacuum vessel is set to a reduced pressure atmosphere, and the sputter beam irradiation apparatus 202 and the ion source 203 are operated.
- the target 201 is irradiated with ions from the sputter beam irradiation apparatus 202, and the constituent particles of the target 201 are blown off and deposited on the metal substrate 101.
- mixed ions of rare gas ions and oxygen ions are emitted from the ion source 203 and are incident on the surface of the metal substrate 101 at a predetermined incident angle ( ⁇ ).
- the specific crystal axis of the formed sputtered film is in the ion incident direction. Fixed.
- the c-axis is oriented in the direction perpendicular to the surface of the metal substrate, and the a-axis and b-axis are oriented in a certain direction in the plane.
- the intermediate layer 102 formed by the IBAD method has a high degree of in-plane orientation.
- the cap layer 103 is epitaxially grown by being formed on the surface of the intermediate layer 102 in which the in-plane crystal axes are oriented as described above, and then grows laterally, so that the crystal grains are self-aligned in the in-plane direction.
- material capable of oriented for example, composed of CeO 2. Since the cap layer 103 is self-orientated in this manner, a higher in-plane orientation degree than that of the intermediate layer 102 can be obtained. Therefore, when the oxide superconducting layer 104 is formed on the metal substrate 101 through the intermediate layer 102 and the cap layer 103, the oxidation is performed so as to match the crystal orientation of the cap layer 103 having a high degree of in-plane orientation. The superconducting layer 104 is epitaxially grown. Therefore, the oxide superconducting layer 104 having excellent in-plane orientation and a large critical current density can be obtained.
- FIG. 9 shows a schematic structural example of a specific apparatus when the above-described IBAD method is performed.
- the configuration of the IBAD apparatus 300 in this example is shown below.
- the long tape-like base material 301 is reciprocally wound a plurality of times between the first roll 302 and the second roll 303.
- a rectangular target 305 is disposed so as to face the base material 301 exposed in a plurality of rows between the first roll 302 and the second roll 303.
- a sputter ion source source 306 is disposed so as to face the target 305 in an oblique direction.
- the substrate 301 exposed in a plurality of rows between the first roll 302 and the second roll 303 is inclined at a predetermined angle (for example, 45 ° or 55 ° with respect to the normal of the film formation surface of the substrate 301).
- the assist ion source source 307 is arranged so as to face each other.
- a configuration including a plurality of ion guns corresponding to a plurality of targets is adopted, and these are arranged at symmetrical positions of the rotary holder including the targets.
- An apparatus having a configuration in which two sets are arranged is known.
- An apparatus having a configuration provided with a plurality of ion guns is also known.
- an ion beam sputtering apparatus in which a plurality of ion guns are provided for one target is known.
- Patent Document 4 there is known an ion beam sputtering apparatus that includes a plurality of ion gun drivers for irradiating a plurality of locations of a target with an ion beam and controls a current density distribution for each ion beam irradiation position. It has been.
- Japanese Unexamined Patent Publication No. 2004-71359 Japanese Unexamined Patent Publication No. 2004-027306 Japanese Laid-Open Patent Publication No. 8-74052 Japanese Unexamined Patent Publication No. 2004-285424
- the IBAD apparatus 300 shown in FIG. 9 is advantageous when trying to form a thick film because the substrate 301 reciprocates a plurality of times between the first roll 302 and the second roll 303, and can improve productivity. It has the characteristics.
- the IBAD apparatus 300 shown in FIG. 9 has a sputter target 305 having a large size in order to make the sputtered particles uniformly fly on a plurality of rows of base materials 301 spanned between the first roll 302 and the second roll 303. It is rectangular.
- the sputter ion source 306 is also rectangular.
- Such a large rectangular ion source 306 is not commonly used in the general film-forming field such as the semiconductor field and is a custom-made product, and thus has a problem that it must be extremely expensive.
- a large IBAD apparatus 300 as shown in FIG. 9 needs to balance the intensity of the assist ion beam and the sputter beam in order to maintain the uniformity of the film thickness and film quality.
- this type of ion beam sputtering apparatus there is usually one set of assist ion gun and one set of sputter ion gun.
- the film thickness can be further increased while forming a film over a large area. It was extremely difficult to adjust.
- the present invention relates to a base material having an intermediate layer as a base for forming an oxide superconducting layer having excellent crystal orientation, and having an intermediate layer having a good crystal orientation and a uniform film thickness
- An object of the present invention is to provide an ion beam assisted sputtering apparatus and an ion beam assisted sputtering method suitable for producing a substrate for a superconducting conductor.
- An ion beam-assisted sputtering apparatus includes a target; a sputter ion source that irradiates the target with sputter ions and knocks out a part of the constituent particles of the target; A film forming region in which a substrate for depositing particles is installed; and an assist ion beam that irradiates the assist ion beam from an oblique direction with respect to the normal direction of the film forming surface of the substrate installed in the film forming region.
- a plurality of ion guns arranged so that the sputter ion source can irradiate a sputter ion beam from one end of the target to the other end. And current values for generating the sputter ion beams of the plurality of ion guns are respectively set.
- the current values of the ion guns arranged at both ends of the plurality of ion guns may be set higher than the current values of the other ion guns arranged between the ion guns arranged at both ends.
- the target may be formed in a rectangular shape so as to correspond to the film formation region, and the plurality of ion guns may be arranged along a longitudinal direction of the target.
- the current value of the ion guns arranged at both ends may be set to 4 to 100% higher than the current value of the other ion guns arranged between the ion guns arranged at both ends.
- the current values of the plurality of ion guns may be adjusted respectively.
- An ion beam assisted sputtering method makes it possible to irradiate a target with a sputter ion beam that knocks out a part of the constituent particles of the target from one end of the target to the other end.
- a sputter ion source having a plurality of ion guns arranged in such a manner; a film forming region in which a base material for depositing particles knocked out from the target is placed; and a base material placed in the film forming region
- An ion beam assisted sputtering apparatus comprising: an assist ion beam irradiation apparatus that irradiates an assist ion beam from an oblique direction with respect to a normal direction of the film formation surface; An ion beam assisted film forming method for depositing constituent particles of the target to form a film on the substrate, wherein The current value for generating the sputter ion beam of the ion gun disposed at the end is set to be larger than the current value for generating the sputter ion beam of the other ion gun disposed between the ion guns disposed at both ends.
- a step of performing ion beam assisted sputtering at a high setting is 4 to 100% higher than the current value of the other ion gun disposed between the ion guns disposed at both ends. It may be set higher.
- the one side end of the target among the ion guns arranged to correspond to the target is irradiated with the sputtering beam.
- the ion gun and the ion gun that irradiates the other end of the target with the sputter beam set the current value for generating the ion beam higher than that of the other ion guns disposed between the ion guns. For this reason, when forming a film with good crystal orientation on the substrate by the ion beam assisted sputtering method, it is possible to efficiently and uniformly generate sputtered particles from every corner of the target.
- the conventional rectangular ion gun cannot perform the adjustment as described above for each position, whereas the ion beam assisted sputtering apparatus according to one aspect of the present invention uses a large area sputtering target to achieve a large area.
- an apparatus for obtaining a film with good orientation can be provided at low cost while ensuring uniformity of film thickness, and the manufacturing cost of the oxide superconductor can be reduced.
- the uniformity of the sputtered particles knocked out of the target is set by making the current value applied to the ion gun corresponding to the end side of the target 4 to 100% higher than the current value applied to the ion gun corresponding to the center side of the target.
- a film having a uniform thickness can be formed.
- FIG. 1 is a schematic configuration diagram showing an ion beam assist sputtering apparatus according to a first embodiment of the present invention. It is a schematic block diagram which shows the ion gun of the ion beam assist sputtering apparatus which concerns on the same embodiment. It is a schematic block diagram which shows the ion gun of the conventional ion beam assist sputtering device. It is a schematic block diagram which shows the application example of the ion beam assist sputtering device shown in FIG.
- FIG. 1 is a schematic vertical sectional view showing the structure of an oxide superconducting conductor substrate manufactured by an ion beam assisted sputtering method according to an embodiment of the present invention and the structure of an oxide superconducting conductor to which the substrate is applied. As shown in FIG.
- an oxide superconducting conductor substrate 1 includes an intermediate layer 3 formed on a metal substrate 2 by an ion beam assisted sputtering method, and a cap layer formed thereon. 4 and the oxide superconducting conductor 5 has a basic structure in which the oxide superconducting layer 6 is formed on the cap layer 4 of the base material for oxide superconducting conductor 1 described above. .
- the present invention can also be applied to a structure in which the intermediate layer 3 is formed after one end of a diffusion prevention layer, a base layer, or the like is formed on the metal substrate 2. Even if the stabilization layer is laminated on the oxide superconducting layer 6, the present invention can be applied without any problem.
- the material which comprises each said layer is explained in full detail.
- Metal base material As a material constituting the metal substrate 2, metals such as Cu, Ni, Ti, Mo, Nb, Ta, W, Mn, Fe, and Ag, which are excellent in strength and heat resistance, or alloys thereof can be used. . Particularly preferred are stainless steel, hastelloy, and other nickel-based alloys that are excellent in corrosion resistance and heat resistance. Alternatively, in addition to these, a ceramic substrate, an amorphous alloy substrate, or the like may be used.
- the intermediate layer 3 is a deposited film formed by the IBAD method, and functions as a buffer layer that alleviates the difference in physical properties (thermal expansion coefficient, lattice constant, etc.) between the metal substrate 2 and the oxide superconducting layer 6. At the same time, it functions as an orientation control film for controlling the orientation of the cap layer 4 formed thereon.
- an ion beam assisted sputtering method is carried out using the ion beam assisted sputtering apparatus according to the present invention, which will be described later.
- the material constituting the intermediate layer 3 those whose physical characteristics show intermediate values between the metal substrate 2 and the oxide superconducting conductor film 6 are used.
- Examples of such a material for the intermediate layer 3 include yttria stabilized zirconium (YSZ), MgO, SrTiO 3 , Gd 2 Zr 2 O 7 and the like.
- YSZ yttria stabilized zirconium
- MgO yttria stabilized zirconium
- SrTiO 3 Gd 2 Zr 2 O 7
- Gd 2 Zr 2 O 7 an appropriate compound having a pyrochlore structure, a rare earth-C structure, a perovskite structure, a fluorite structure, or a rock salt structure.
- YSZ, Gd 2 Zr 2 O 7 , or MgO as the material of the intermediate layer 3.
- Gd 2 Zr 2 O 7 and MgO are particularly suitable as the material for the intermediate layer because ⁇ (FWHM: full width at half maximum), which is an index representing the degree of orientation in the IBAD method, can be reduced.
- the thickness of the intermediate layer 3 is preferably in the range of 5 nm to 2000 nm, for example, and more preferably in the range of 50 nm to 1000 nm, but is not limited only to these ranges.
- the film thickness of the intermediate layer 3 exceeds 1000 nm, the film formation time of the intermediate layer 3 becomes long because the film formation speed of the IBAD method used as the film formation method of the intermediate layer 3 is relatively low.
- the thickness of the intermediate layer 3 exceeds 2000 nm, the surface roughness of the intermediate layer 3 increases, and the critical current density of the oxide superconducting conductor 5 may be reduced.
- the film thickness of the intermediate layer 3 is less than 5 nm, it becomes difficult to control the crystal orientation of the intermediate layer itself, and it becomes difficult to control the degree of orientation of the cap layer 4 formed thereon. It becomes difficult to control the degree of orientation of the oxide superconducting layer 6 formed on 4. As a result, the critical current of the oxide superconductor 5 may be insufficient.
- the intermediate layer 3 of the present embodiment does not need to have a single layer structure.
- the MgO first layer 3 ⁇ / b > A on the base material 2 side and the Gd 2 Zr 2 O laminated thereon. 7 has a two-layer structure composed of the second layer 3B, but other multilayer structures may be used.
- the cap layer 4 has a function of controlling the orientation of the oxide superconducting layer 6 provided on the cap layer 4, and also diffuses elements constituting the oxide superconducting layer 6 into the intermediate layer 3 and gas used during film formation. And a function of suppressing the reaction between the intermediate layer 3 and the like.
- the cap layer 4 is formed through a process of epitaxial growth with respect to the surface of the intermediate layer 3, and then grain growth (overgrowth) in the lateral direction (plane direction), and crystal grains are selectively grown in the in-plane direction. What is film
- the cap layer 4 that is selectively grown in this way has a higher in-plane orientation than the intermediate layer 3.
- the material constituting the cap layer 4 is not particularly limited as long as it can exhibit such a function.
- CeO 2 , Y 2 O 3 or the like is preferably used.
- the cap layer 4 does not have to be entirely composed of CeO 2 , and Ce—M in which a part of Ce is substituted with another metal atom or metal ion. It may contain —O-based oxide.
- the appropriate film thickness of the cap layer 4 varies depending on the constituent material.
- the thickness of the cap layer 4 is preferably in the range of 50 nm to 5000 nm, and more preferably 100 nm to 5000 nm. If the film thickness of the cap layer 4 is out of these ranges, a sufficient degree of orientation may not be obtained.
- RE-123 oxide superconductor (REBa 2 Cu 3 O 7-X : RE is a rare earth element such as Y, La, Nd, Sm, Eu, Gd, etc.) is used. it can. Preferred as the RE-123 oxide is Y123 (YBa 2 Cu 3 O 7-X ) or Gd123 (GdBa 2 Cu 3 O 7-X ).
- a long metal substrate 2 such as a tape made of the aforementioned material is prepared, and an intermediate layer 3 made of the aforementioned material is formed on the metal substrate 2 by the IBAD method.
- a cap layer 4 is formed on the intermediate layer 3 by a reactive DC sputtering method using a metal target.
- the intermediate layer 3 is formed by an ion beam assisted sputtering apparatus and an ion beam assisted sputtering method using the ion beam assisted sputtering apparatus will be described below.
- FIG. 2 is a schematic configuration diagram showing an ion beam assisted sputtering apparatus according to the first embodiment of the present invention.
- a rectangular target 12 is disposed so as to face a substantially rectangular film forming region 11 on which a tape-shaped substrate or the like is disposed.
- the sputter ion source 13 is disposed so as to face the oblique direction, and the assist ion source is opposed to the normal to the film forming region 11 at a predetermined angle (for example, 45 ° or 55 °) from the oblique direction.
- a source 15 is arranged and configured.
- the ion beam assist sputtering apparatus 10 of this example is a film forming apparatus provided in a form accommodated in a vacuum chamber. Specifically, for example, as shown in FIG. 5, the film forming region 11 of this apparatus is reciprocally wound around a first roll 18 and a second roll 19 on which a tape-like base material 17 is disposed oppositely.
- a structure in which the film forming region 11 is reciprocated can be exemplified, but the structure is not limited to the apparatus structure of FIG. In FIG. 5, the vertical position relationship between the position of the target 12 and the film formation region 11 is reversed with respect to the configuration of FIG. 2, but these vertical relationships may be arbitrary.
- the vertical position relationship is set so that the sputter ion source source 13 faces the target 12 and the assist ion source source 15 faces the film formation region 11.
- the entire device is configured by adjusting.
- the vacuum chamber used in the present embodiment is a container that partitions the outside and the film formation space, has airtightness, and has pressure resistance because the inside is in a high vacuum state.
- the vacuum chamber is connected to a gas supply means for introducing a carrier gas and a reaction gas into the vacuum chamber and an exhaust means for exhausting the gas in the vacuum chamber. In FIG. 2, these supply means and exhaust means are omitted, and only the arrangement relationship of each device is shown.
- the target 12 used here can be a target having a composition suitable for forming the intermediate layer 3 of the material described above.
- the sputter ion source 13 used in the present embodiment is a rectangular sputter ion source 14 as shown in FIG. 4 in the conventional apparatus, whereas four round ion guns 16 are installed in a horizontal row.
- the ion gun 16 is configured such that a gas to be ionized is introduced into a cylindrical container and a lead electrode is provided on the front surface.
- the ion gun 16 is configured such that a gas to be ionized is introduced into a cylindrical container and a lead electrode is provided on the front surface.
- a lead electrode is provided on the front surface.
- it is an apparatus which ionizes one part of the atom or molecule
- the filament method is a method in which a tungsten filament is energized and heated to generate thermoelectrons and collide with gas molecules in a high vacuum to be ionized.
- the high frequency excitation method is a method in which gas molecules in a high vacuum are ionized by polarization with a high frequency electric field.
- an ion gun 16 having a structure shown in FIG. 6 can be used.
- the ion gun 16 of this example includes an extraction electrode 28, a filament 29, and an introduction tube 20 for Ar gas or the like inside a cylindrical container 27.
- the ion gun 16 is irradiated in parallel with a beam from the tip of the container 27.
- the region can be irradiated in a circular shape.
- These four ion guns 16 are formed in such a size that an ion beam can be irradiated onto a region having a width and depth substantially equal to those of a rectangular ion source 14 having a conventional structure by arranging the four ion guns 16 in a line. .
- the arrangement of four groups can be arranged so as to cover an area of about 90% or more as compared with a rectangular ion source having a conventional structure.
- the output of the ion gun 16 means the product of the acceleration voltage applied to the extraction electrode 28 and the current value of the ion beam.
- the current value at the time of generating the ion beams of the two ion guns 16 at both ends is made to be in the range of 4 to 100% higher than the current value at the time of generating the ion beams of the two central ion guns 16, Sputtered particles can be ejected uniformly from the target 12 in a suitable state.
- the ion beam irradiated to the target 12 by the central ion gun 16 overlaps depending on the diffusion state of the ion beam irradiated to the target 12 by the central ion gun 16.
- the generation efficiency of sputtered particles from the target 12 is increased.
- the ion beam does not overlap, so that the sputtering efficiency is lowered. As a result, there is a problem that the film forming rate is lowered, and it is impossible to expect generation of uniform sputtered particles.
- the current value when generating the ion beams of the two ion guns 16 on both ends is in the range increased by 4 to 100% as described above, there is little overlap of the diffused ion beams, and A decrease in the amount of sputtered particles can be prevented.
- sputtered particles can be generated efficiently and evenly from the target 12 in the region where the ion guns 16 at both ends irradiate ions.
- a target amount of sputtered particles can be deposited on the film formation region 11 at a position corresponding to the end side of the target 12, a wide region of the film formation region 11 corresponding to the rectangular target 12 is obtained. Can deposit uniform particles.
- the ion beam assist sputtering apparatus 10 having the configuration shown in FIG. 2 is operated to form a film by the ion beam assist sputtering method.
- sputtering is performed to irradiate the target 12 with the sputtering beam and knock out the sputtered particles.
- the sputtered particles are made to fly to the film forming region 11 to deposit the sputtered particles on the base material 2 installed in the film forming region 11, and the ions from the assist ion source source 15 as shown in FIG.
- the previous sputtered particles are deposited while irradiating the substrate 2 in the film forming region 11 with a predetermined angle in the oblique direction.
- the sputtered particles generated from the target 12 can be formed on the substrate 2 with good crystal orientation and uniform film thickness.
- the intermediate layer 3 excellent in crystal orientation can be deposited.
- the arrival ratio between the sputtered particles and the assist ion beam on the substrate 2 is important, and the orientation of the obtained film changes accordingly. Therefore, when the film is formed in a large area, it is necessary to approach the optimum ratio in all area areas.
- the case shown above is a case where the assist ion beam is uniformly irradiated, and the sputtered particles need to be supplied uniformly to the entire film formation region.
- the ratio of the output of the sputter ion gun can be appropriately controlled according to the intensity distribution of the assist ion beam.
- the arrival ratio of the sputtered particles and the assist ion beam in the film formation area can be brought close to the optimum ratio. Therefore, it is also important that the current value of each assist ion gun can be set individually.
- the current value when generating the ion beams of the two ion guns 16 at both ends is improved by 4 to 100% as described above than the current value when generating the ion beams of the two central ion guns 16.
- a film having a uniform thickness can be deposited on the surface side of the substrate 2 placed in the film formation region 11.
- the four round ion guns 16 used in this embodiment are compared with the rectangular large-area ion gun 14, the rectangular large-area ion gun 14 is used so as to correspond to the rectangular region of the target 12. In that case, you have to make an ion gun specially.
- a general-purpose ion gun used in a general film forming field such as a semiconductor field can be used.
- the ion gun to be applied can be easily made into an inexpensive structure. Therefore, as compared with the ion beam assisted sputtering apparatus having a conventional structure in which a rectangular ion gun is specially manufactured, there is an effect of reducing the cost of the entire ion beam assisted sputtering apparatus.
- the current value when generating the ion beams of the two ion guns 16 at both ends is improved by 4 to 100% as described above than the current value when generating the ion beams of the two central ion guns 16.
- the orientation of the film that can be generated can be improved. Improvement of orientation is advantageous in terms of improvement of superconducting properties.
- An intermediate layer 3 having a two-layer structure composed of a first layer 3A of MgO and a second layer 3B of Gd 2 Zr 2 O 7 can be formed on the substrate 1.
- the target 12 is made of MgO once in the ion beam assisted sputtering apparatus shown in FIG. 2, and is formed on the first layer by another ion beam assisted sputtering apparatus having the same configuration as that shown in FIG. A Gd 2 Zr 2 O 7 layer can be formed.
- the second layer 3B can be formed in the same manner.
- the cap layer 4 when the cap layer 4 is formed on the second layer 3 by the IBAD method, the cap layer 4 can be similarly configured by an ion beam assisted sputtering apparatus using four ion guns.
- an ion beam assisted sputtering apparatus using four ion guns.
- the large rectangular ion gun 14 having a width of about 1 m
- a combination of a plurality of round ion guns 16 having a size of about 1/4 can be used for irradiation of a target having an equivalent area. In this case, the cost of the apparatus can be reduced.
- sputtering with a combination of a plurality of round ion guns 16 with respect to a rectangular large ion gun 14 a stronger sputtering rate can be secured, and the efficiency during film formation can be improved.
- a round ion gun is advantageous because the ion beam can be focused from the grid shape and the beam intensity can be increased.
- Example 1 First, a 250 nm thick Gd 2 Zr 2 O 7 film was formed on a long tape-shaped Hastelloy metal substrate with an ion beam assisted sputtering apparatus having the configuration shown in FIG. 2 over 30 minutes. At the time of film formation, four ion guns each having an irradiation aperture of 16 cm were used, and four samples were measured in the longitudinal direction (ion gun arrangement direction) using an apparatus arranged in a row. The acceleration voltage of the extraction electrode of these ion guns was set to 1500V.
- the current value of the central two ion guns was set to 200 mA, and the current value of the two ion guns on both ends was set to 300 mA.
- an ion gun having a rectangular irradiation diameter of 16 cm in width and 1.1 m in length is used, the acceleration voltage is set to 1500 V, and the current value is set to 1000 mA.
- the acceleration voltage was set to 1500 V, the current values were all set to 250 mA, and the other layers were formed under the same conditions to form the intermediate layer.
- membrane the film thickness measurement in the position equivalent to a previous example was performed.
- Ion gun shape Rectangular ion gun (1 unit) Current value: (Uniform) 1000 mA Film thickness: 313nm-520nm-517nm-326nm Ion gun shape: Circular ion gun (4 units) Current value: (Equal) 250mA ⁇ 4 Film thickness: 530nm-710nm-702nm-552nm Ion gun shape: Circular ion gun (4 units) Current value: 2 on the center side: 250 mA: 2 on both sides: 300 mA Film thickness: 746nm-753nm-760nm-738nm Ion gun shape: Circular ion gun (4 units) Current value: 2 on the center side: 250 mA: 2 on both sides: 280 mA Film thickness: 632nm-718nm-722nm-625nm
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Abstract
Description
本願は、2009年10月8日に、日本に出願された特願2009-234352号に基づき優先権を主張し、その内容をここに援用する。
このように、金属基材101の表面に、ターゲット201の構成粒子を堆積させつつ、所定の入射角度でイオン照射を行うことにより、形成されるスパッタ膜の特定の結晶軸がイオンの入射方向に固定される。これにより、c軸が金属基材の表面に対して垂直方向に配向するとともに、a軸及びb軸が面内において一定方向に配向する。このため、IBAD法によって形成された中間層102は、高い面内配向度を有する。
更に、図9に示すような大型のIBAD装置300は、膜厚及び膜質の均一性を保つために、アシストイオンビームとスパッタビームとの強度バランスを取る必要がある。この種のイオンビームスパッタ装置には、通常、アシストイオンガンとスパッタイオンガンとが1セットずつ存在するが、スパッタビームのイオン源が1つである場合、大面積に成膜しながら、更に膜厚を調整することは極めて困難であった。
本発明の一態様に係るイオンビームアシストスパッタ装置は、ターゲットと;このターゲットにスパッタイオンを照射して、前記ターゲットの構成粒子の一部を叩き出すスパッタイオン源と;前記ターゲットから叩き出された粒子を堆積させるための基材を設置する成膜領域と;この成膜領域に設置された前記基材の成膜面の法線方向に対して斜め方向からアシストイオンビームを照射するアシストイオンビーム照射装置と;を備えるイオンビームアシストスパッタ装置であって、前記スパッタイオン源が、スパッタイオンビームを前記ターゲットの一側端部から他側端部まで照射可能になるように配列された複数のイオンガンを有し、前記複数のイオンガンの前記スパッタイオンビームを発生させるための電流値が、それぞれ設定される。
前記ターゲットが、前記成膜領域に対応するように長方形状に形成され、前記複数のイオンガンが、前記ターゲットの長手方向に沿って配置されてもよい。
前記両端に配置されたイオンガンの前記電流値が、これら両端に配置されたイオンガンの間に配置された前記他のイオンガンの前記電流値よりも4~100%高く設定されてもよい。
前記複数のイオンガンの前記電流値が、それぞれ調整されてもよい。
前記イオンビームアシストスパッタを行う工程で、前記両端に配置されたイオンガンの前記電流値が、これら両端に配置されたイオンガンの間に配置された前記他のイオンガンの前記電流値よりも4~100%高く設定されてもよい。
更に、ターゲットの端部側に対応するイオンガンに印加する電流値をターゲットの中央側に対応するイオンガンに印加する電流値よりも4~100%高くすることにより、ターゲットから叩き出すスパッタ粒子の均一性を向上させて均一な厚さの膜を形成することができる。
<酸化物超電導導体用基材及び酸化物超電導導体>
まず、本発明の一実施形態に係るイオンビームアシストスパッタ装置及びイオンビームアシストスパッタ方法によって製造される酸化物超電導導体用基材及びそれを適用した酸化物超電導導体を以下に説明する。
図1は、本発明の一実施形態に係るイオンビームアシストスパッタ方法によって製造される酸化物超電導導体用基材及びそれを適用した酸化物超電導導体の構造を示す縦方向の概略断面図である。図1に示すように、本実施形態に係る酸化物超電導導体用基材1は、金属基材2上に成膜したイオンビームアシストスパッタ方法による中間層3と、その上に成膜したキャップ層4とを備えた積層構造を有しており、酸化物超電導導体5は、前述の酸化物超電導導体用基材1のキャップ層4の上に、酸化物超電導層6を形成した基本構造を有する。なお、金属基材2の上に拡散防止層や下地層などを一端形成した上で中間層3を形成した構造についても、本発明を支障なく適用することができる。酸化物超電導層6の上に安定化層を積層した構造であっても、本発明を支障なく適用することができる。以下、前記各層を構成する材料について詳述する。
金属基材2を構成する材料としては、強度及び耐熱性に優れた、Cu、Ni、Ti、Mo、Nb、Ta、W、Mn、Fe、Ag等の金属又はこれらの合金を用いることができる。特に好ましいのは、耐食性及び耐熱性の点で優れているステンレス、ハステロイ、その他のニッケル系合金である。あるいは、これらに加えて、セラミック製の基材、非晶質合金の基材などを用いても良い。
中間層3は、IBAD法によって形成された蒸着膜であり、金属基材2と酸化物超電導層6との物理的特性(熱膨張率や格子定数等)の差を緩和するバッファー層として機能するとともに、この上に形成されるキャップ層4の配向性を制御する配向制御膜として機能する。この中間層3を成膜する場合に、本発明に係るイオンビームアシストスパッタ装置を用いてイオンビームアシストスパッタ方法を実施するが、それらの説明については後述する。
中間層3を構成する材料としては、これらの物理的特性が金属基材2と酸化物超電導導体膜6との中間的な値を示すものが用いられる。このような中間層3の材料としては、例えば、イットリア安定化ジルコニウム(YSZ)、MgO、SrTiO3、Gd2Zr2O7等を挙げることができる。その他、パイロクロア構造、希土類-C構造、ペロブスカイト型構造又は蛍石型構造あるいは岩塩構造を有する適宜の化合物を用いることができる。これらの中でも、中間層3の材料としては、YSZ、Gd2Zr2O7、あるいはMgOを用いることが好ましい。特に、Gd2Zr2O7やMgOは、IBAD法における配向度を表す指標であるΔΦ(FWHM:半値全幅)の値を小さくできるため、中間層の材料として特に適している。
中間層3の膜厚が1000nmを超えると、中間層3の成膜方法として用いるIBAD法の成膜速度が比較的低速であることから、中間層3の成膜時間が長くなる。中間層3の膜厚が2000nmを超えると、中間層3の表面粗さが大きくなり、酸化物超電導導体5の臨界電流密度が低くなる可能性がある。
一方、中間層3の膜厚が5nm未満であると、中間層自身の結晶配向性を制御することが難しくなり、この上に形成されるキャップ層4の配向度制御が難しくなり、さらにキャップ層4の上に形成される酸化物超電導層6の配向度制御も難しくなる。その結果、酸化物超電導導体5の臨界電流が不十分となる可能性がある。
本実施形態の中間層3は、1層構造である必要はなく、例えば、図1に示す例では、基材2側にMgOの第一層3Aとその上に積層されたGd2Zr2O7の第二層3Bとからなる2層構造を有するが、その他の複層構造であっても差し支えない。
キャップ層4は、その上に設けられる酸化物超電導層6の配向性を制御する機能を有するとともに、酸化物超電導層6を構成する元素の中間層3への拡散や、成膜時に使用するガスと中間層3との反応を抑制する機能などを有する。
キャップ層4としては、中間層3の表面に対してエピタキシャル成長し、その後、横方向(面方向)に粒成長(オーバーグロース)して、結晶粒が面内方向に選択成長するという過程を経て成膜されたものであるものが好ましい。このように選択成長しているキャップ層4は、中間層3よりも高い面内配向度が得られる。
キャップ層4を構成する材料としては、このような機能を発現し得るものであれば特に限定されないが、例えば、CeO2、Y2O3等を用いるのが好ましい。
キャップ層4の構成材料としてCeO2を用いる場合、キャップ層4は、全体がCeO2によって構成されている必要はなく、Ceの一部が他の金属原子又は金属イオンで置換されたCe-M-O系酸化物を含んでいてもよい。
酸化物超電導層6の材料としては、RE-123系酸化物超電導体(REBa2Cu3O7-X:REはY、La、Nd、Sm、Eu、Gd等の希土類元素)を用いることができる。RE-123系酸化物として好ましいのは、Y123(YBa2Cu3O7-X)又はGd123(GdBa2Cu3O7-X)等である。
次に、前述の構造の酸化物超電導導体用基材の製造方法について説明する。
まず、前述の材料からなるテープ状などの長尺の金属基材2を用意し、この金属基材2上に、IBAD法によって前述の材料からなる中間層3を形成する。また、この中間層3上に、金属ターゲットを用いる反応性DCスパッタ法などによってキャップ層4を形成する。
本実施形態の説明では、以下、イオンビームアシストスパッタ装置とそれを用いたイオンビームアシストスパッタ方法により中間層3を成膜する場合について説明する。
図2は、本発明の第1実施形態に係るイオンビームアシストスパッタ装置を示す概略構成図である。
図2に示すイオンビームアシストスパッタ装置10は、テープ状の基材などが配置される略長方形状の成膜領域11に面するように長方形状のターゲット12が配置され、このターゲット12に対して斜め方向に対向するようにスパッタイオンソース源13が配置されるとともに、成膜領域11の法線に対し所定の角度で(例えば45゜あるいは55゜など)斜め方向から対向するようにアシストイオンソース源15を配置し構成されている。
この例のイオンビームアシストスパッタ装置10は、真空チャンバに収容される形態で設けられる成膜装置である。この装置の成膜領域11は、具体的には例えば図5に示すように、テープ状の基材17が対向配置された第1のロール18と第2のロール19とに複数回往復巻回されて成膜領域11を往復走行される構造などを例示することができるが、図5の装置構造のみに限るものではない。なお、図5では図2の構成に対し、ターゲット12の位置と成膜領域11の上下位置関係が逆転しているが、これらの上下関係は任意で良い。ターゲット12と成膜領域11との上下位置関係に合わせて、スパッタイオンソース源13がターゲット12に対向し、アシストイオンソース源15が成膜領域11に対向するように、これらの上下位置関係を調整して装置全体が構成される。
本実施形態で用いる真空チャンバは、外部と成膜空間とを仕切る容器であり、気密性を有するとともに、内部が高真空状態とされるため耐圧性を有する。この真空チャンバには、真空チャンバ内にキャリアガス及び反応ガスを導入するガス供給手段と、真空チャンバ内のガスを排気する排気手段が接続されている。図2では、これら供給手段と排気手段を略し、各装置の配置関係のみを示している。
ここで用いるターゲット12とは、前述した材料の中間層3を形成する場合に適した組成のターゲットとすることができる。
このイオンガン16は、例えば図6に示すように円筒状容器の内部に、イオン化させるガスを導入し、正面に引き出し電極を備えて構成されている。そして、ガスの原子または分子の一部をイオン化し、そのイオン化した粒子を引き出し電極で発生させた電界で制御してイオンビームとして照射する装置である。ガスをイオン化する方法には、高周波励起方式、フィラメント式等の種々のものがある。フィラメント式は、タングステン製のフィラメントに通電加熱して熱電子を発生させ、高真空中でガス分子と衝突させてイオン化する方法である。また、高周波励起方式は、高真空中のガス分子を高周波電界で分極させてイオン化する方法である。
本実施形態において、例えば、図6に示す構造のイオンガン16を用いることができる。この例のイオンガン16は、筒状の容器27の内部に、引出電極28とフィラメント29とArガス等の導入管20とを備えて構成され、容器27の先端からイオンをビーム状に平行かつ照射領域を円状に照射できるものである。
ここでイオンガン16の出力とは、引出電極28に印加する加速電圧と、イオンビームの電流値との積を意味する。
4基のイオンガン16に均等な電流値を印加した場合、中央側のイオンガン16がターゲット12に照射するイオンビームの拡散の状態により、中央側のイオンガン16がターゲット12に照射するイオンビームが重なって照射される結果、ターゲット12からのスパッタ粒子発生効率は高くなる。一方、両端側のイオンガン16がターゲット12の端部側に照射するイオンビームの領域では、イオンビームの重なりが生じないためにスパッタ効率が低下する。この結果、成膜レートが低下する問題があり、均等なスパッタ粒子の発生を望むことができない。これに対し、両端側の2基のイオンガン16のイオンビームを発生させる際の電流値を上述のように4~100%アップした範囲とすれば、拡散したイオンビームの重なりが少なく、両端でのスパッタ粒子量の低下を防ぐことが出来る。このため、両端側のイオンガン16がイオンを照射する領域のターゲット12から効率良く均等にスパッタ粒子の発生を行うことができる。この結果、ターゲット12の端部側に対応する位置の成膜領域11に対し目的の量のスパッタ粒子の堆積を行うことができるので、長方形状のターゲット12に対応した広い領域の成膜領域11に均一な粒子を堆積できる。
以上の操作により、ターゲット12から発生させたスパッタ粒子を良好な結晶配向性かつ均等な膜厚で、基材2の上に成膜することができる。この結果、結晶配向性に優れた中間層3を堆積できる。
上記に示したケースは、アシストイオンビームが均一に照射されている場合であり、スパッタ粒子も成膜領域全体に均一に供給する必要があるケースである。勿論、アシストイオンビームが何らかの原因で場所による分布が生じている場合、本構造の装置によれば、アシストイオンビームの強度分布に応じてスパッタイオンガンの出力の比率を適宜コントロールできる。これにより、成膜面積におけるスパッタ粒子とアシストイオンビームとの到達比率を最適比率に近付けることができる。よって、個々のアシストイオンガンの電流値を個別に設定出来ることも重要である。
更に、中央の2基のイオンガン16のイオンビームを発生させる際の電流値よりも両端側の2基のイオンガン16のイオンビームを発生させる際の電流値を上述のように4~100%向上した範囲とすることにより、生成できる膜の配向性を向上させることができる。配向性の向上は、超電導特性の向上の面で有利となる。
以上の説明から、例えば幅1m程度の長方形状の大型のイオンガン14に代えて、1/4程度のサイズの丸型の複数のイオンガン16の組み合わせを同等面積のターゲットの照射に用いることができる。この場合、装置のコストを削減することができる。さらに、長方形状の大型のイオンガン14に対し丸型の複数のイオンガン16の組み合わせでスパッタすることで、より強力なスパッタリングレートを確保することができ、成膜時の効率を向上させることができる。なお、丸型のイオンガンであれば、グリッドの形状からイオンビームを集束させることができ、ビームの強度を上げることができるので有利となる。
(実施例1)
まず、長尺テープ状のハステロイ金属基材上に、図2に示す構成のイオンビームアシストスパッタ装置により厚さ250nmのGd2Zr2O7膜を30分間かけて形成した。この成膜の際、イオンガンはいずれも照射口径16cmのものを4基、横に一列に並べた構成の装置を用い、長手方向(イオンガンの配列方向)に4箇所サンプルの測定を行った。これらイオンガンの引出電極の加速電圧を1500Vに設定した。4基のイオンガンのうちの、中央側2基のイオンガンの電流値を200mAに設定し、両端側2基のイオンガンの電流値を300mAに設定した。
これに対し、先の4基のイオンガンの代わりに、幅16cm、長さ1.1mの長方形状の照射径を有するイオンガンを用い、加速電圧を1500V、電流値を1000mAに設定し、他の条件は同等として中間層の成膜を行った。
更に比較のために、先の4基のイオンガンにおいて、加速電圧を1500V、電流値を全て250mAに設定し、他の条件は同等として中間層の成膜を行った。得られた各膜について、先の例と同等位置での膜厚測定を行った。
「表1」
イオンガン形状: 矩形イオンガン(1基)
電流値: (均一)1000mA
膜厚: 313nm-520nm-517nm-326nm
イオンガン形状: 円形イオンガン(4基)
電流値: (均等)250mA×4
膜厚: 530nm-710nm-702nm-552nm
イオンガン形状: 円形イオンガン(4基)
電流値: 中央側2基:250mA:両端側2基:300mA
膜厚: 746nm-753nm-760nm-738nm
イオンガン形状: 円形イオンガン(4基)
電流値: 中央側2基:250mA:両端側2基:280mA
膜厚: 632nm-718nm-722nm-625nm
イオンガン形状: 円形イオンガン(4基)
電流値: 中央側2基:250mA:両端側2基:600mA(+140%)
配向度:(ΔΦ) 30.5゜-15.3゜-15.2゜-22.3゜
イオンガン形状: 円形イオンガン(4基)
電流値: 中央側2基:250mA:両端側2基:500mA(+100%)
配向度:(ΔΦ) 13.2゜-13.3゜-12.2゜-13.4゜
イオンガン形状: 円形イオンガン(4基)
電流値: 中央側2基:250mA:両端側2基:280mA(+12%)
配向度:(ΔΦ) 11.3゜-10.1゜-10.2゜-11.0゜
イオンガン形状: 円形イオンガン(4基)
電流値: 中央側2基:250mA:両端側2基:260mA(+4%)
配向度:(ΔΦ) 11.9゜-10.9゜-10.8゜-12.2゜
イオンガン形状: 円形イオンガン(4基)
電流値: 中央側2基:250mA:両端側2基:250mA
配向度:(ΔΦ) 13.5゜-11.3゜-11.2゜-14.2゜
イオンガン形状: 円形イオンガン(4基)
電流値: 中央側2基:250mA:両端側2基:300mA(+20%)
配向度:(ΔΦ) 13.3゜-10.9゜-11.8゜-12.2゜
2 基材
3 中間層
3A 第一層
3B 第二層
4 キャップ層
5 酸化物超電導導体
6 酸化物超電導層
10 イオンビームアシストスパッタ装置
11 成膜領域
12 ターゲット
13 イオンソース源
15 アシストイオンガン
16 イオンガン
17 基材
18 第1ロール
19 第二ロール
Claims (7)
- ターゲットと;
このターゲットにスパッタイオンを照射して、前記ターゲットの構成粒子の一部を叩き出すスパッタイオン源と;
前記ターゲットから叩き出された粒子を堆積させるための基材を設置する成膜領域と;
この成膜領域に設置された前記基材の成膜面の法線方向に対して斜め方向からアシストイオンビームを照射するアシストイオンビーム照射装置と;
を備えるイオンビームアシストスパッタ装置であって、
前記スパッタイオン源が、スパッタイオンビームを前記ターゲットの一側端部から他側端部まで照射可能になるように配列された複数のイオンガンを有し、
前記複数のイオンガンの前記スパッタイオンビームを発生させるための電流値が、それぞれ設定される
ことを特徴とするイオンビームアシストスパッタ装置。 - 前記複数のイオンガンのうちの両端に配置されたイオンガンの前記電流値が、これら両端に配置されたイオンガンの間に配置された他のイオンガンの前記電流値よりも高く設定される
ことを特徴とする請求項1に記載のイオンビームアシストスパッタ装置。 - 前記ターゲットが、前記成膜領域に対応するように長方形状に形成され、
前記複数のイオンガンが、前記ターゲットの長手方向に沿って配置される
ことを特徴とする請求項1または請求項2に記載のイオンビームアシストスパッタ装置。 - 前記両端に配置されたイオンガンの前記電流値が、これら両端に配置されたイオンガンの間に配置された前記他のイオンガンの前記電流値よりも4~100%高く設定される
ことを特徴とする請求項1から請求項3のうちいずれか一項に記載のイオンビームアシストスパッタ装置。 - 前記複数のイオンガンの前記電流値が、それぞれ調整される
ことを特徴とする請求項1から請求項4のうちいずれか一項に記載のイオンビームアシストスパッタ装置。 - ターゲットと;
このターゲットの構成粒子の一部を叩き出すスパッタイオンビームを前記ターゲットの一側端部から他側端部まで照射可能になるように配列された複数のイオンガンを有するスパッタイオン源と;
前記ターゲットから叩き出された粒子を堆積させるための基材を設置する成膜領域と;
この成膜領域に設置された前記基材の成膜面の法線方向に対して斜め方向からアシストイオンビームを照射するアシストイオンビーム照射装置と;
を備えるイオンビームアシストスパッタ装置を用いて、前記成膜領域に設置した前記基材上に、前記ターゲットの構成粒子を堆積させて前記基材上に成膜するイオンビームアシスト成膜方法であって、
前記複数のイオンガンのうちの両端に配置されたイオンガンの前記スパッタイオンビームを発生させるための電流値を、これら両端に配置されたイオンガンの間に配置された他のイオンガンの前記スパッタイオンビームを発生させるための電流値よりも高く設定してイオンビームアシストスパッタを行う工程
を備えることを特徴とするイオンビームアシストスパッタ方法。 - 前記イオンビームアシストスパッタを行う工程で、前記両端に配置されたイオンガンの前記電流値が、これら両端に配置されたイオンガンの間に配置された前記他のイオンガンの前記電流値よりも4~100%高く設定される
ことを特徴とする請求項6に記載のイオンビームアシストスパッタ方法。
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