WO2011033916A1 - 成膜方法および記憶媒体 - Google Patents

成膜方法および記憶媒体 Download PDF

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Publication number
WO2011033916A1
WO2011033916A1 PCT/JP2010/064572 JP2010064572W WO2011033916A1 WO 2011033916 A1 WO2011033916 A1 WO 2011033916A1 JP 2010064572 W JP2010064572 W JP 2010064572W WO 2011033916 A1 WO2011033916 A1 WO 2011033916A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
substrate
plating solution
plating
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2010/064572
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
小島　康彦
秀司 東雲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to US13/054,331 priority Critical patent/US20110174630A1/en
Publication of WO2011033916A1 publication Critical patent/WO2011033916A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34—Pretreatment of metallic surfaces to be electroplated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/04—Electroplating with moving electrodes

Definitions

  • a Co film serving as a seed layer is formed on a substrate by CVD, and the negative surface potential of the Co is lower than the oxidation potential of Co relative to the substrate. And then, with the negative voltage applied to the substrate, a plating solution mainly composed of a copper sulfate solution is immersed in the Co film, and electrolytic plating is performed on the Co film on the substrate. Forming a Cu film on the substrate.
  • a DC power source 5 is connected between the wafer W serving as a cathode electrode and the anode electrode 12.
  • the negative electrode of the DC power source 5 is connected to the wafer W through the electrode contact 4, and the positive electrode of the DC power source 5 is connected to the anode electrode 12.
  • the DC power supply 5 has a variable output voltage.
  • FIG. 2 is a flowchart for explaining a film forming method according to an embodiment of the present invention.
  • the method of this embodiment is effective when the thickness of the Co film is 5 nm or less.
  • the thickness of the Co film can be set in consideration of that amount. preferable. Therefore, the thickness of the Co film is preferably in the range of 1.5 to 5 nm.
  • Example> A sample in which a Co film as a plating seed is formed on a substrate with a thickness of 10 nm and a sample with a thickness of 5 nm are prepared. First, without applying a voltage before immersing these samples in a plating solution A Cu film was formed by electrolytic plating. Further, for a sample on which a Co film having a thickness of 5 nm was formed, a voltage of ⁇ 20 V was applied before being immersed in the plating solution, and then a Cu film was formed by electrolytic plating.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Automation & Control Theory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)
PCT/JP2010/064572 2009-09-17 2010-08-27 成膜方法および記憶媒体 Ceased WO2011033916A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/054,331 US20110174630A1 (en) 2009-09-17 2010-08-27 Film formation method and storage medium

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-215415 2009-09-17
JP2009215415A JP2011063849A (ja) 2009-09-17 2009-09-17 成膜方法および記憶媒体

Publications (1)

Publication Number Publication Date
WO2011033916A1 true WO2011033916A1 (ja) 2011-03-24

Family

ID=43758525

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2010/064572 Ceased WO2011033916A1 (ja) 2009-09-17 2010-08-27 成膜方法および記憶媒体

Country Status (5)

Country Link
US (1) US20110174630A1 (enExample)
JP (1) JP2011063849A (enExample)
KR (1) KR20110056455A (enExample)
TW (1) TW201124564A (enExample)
WO (1) WO2011033916A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8858774B2 (en) 2008-11-07 2014-10-14 Novellus Systems, Inc. Electroplating apparatus for tailored uniformity profile
JP5225957B2 (ja) * 2009-09-17 2013-07-03 東京エレクトロン株式会社 成膜方法および記憶媒体
JP5659041B2 (ja) * 2011-02-24 2015-01-28 東京エレクトロン株式会社 成膜方法および記憶媒体
US9909228B2 (en) 2012-11-27 2018-03-06 Lam Research Corporation Method and apparatus for dynamic current distribution control during electroplating
JP6678490B2 (ja) * 2016-03-28 2020-04-08 株式会社荏原製作所 めっき方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000355798A (ja) * 1999-06-15 2000-12-26 Dainippon Screen Mfg Co Ltd 基板メッキ装置
JP2001123291A (ja) * 1999-10-25 2001-05-08 Hitachi Ltd めっき方法及び装置
JP2007534175A (ja) * 2004-04-21 2007-11-22 インテル・コーポレーション 感光性誘電体層を分解することによる相互接続構造の形成
JP2008007830A (ja) * 2006-06-30 2008-01-17 Fujitsu Ltd めっき方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050006245A1 (en) * 2003-07-08 2005-01-13 Applied Materials, Inc. Multiple-step electrodeposition process for direct copper plating on barrier metals
US20040245107A1 (en) * 2003-06-03 2004-12-09 Guangli Che Method for improving electroplating in sub-0.1um interconnects by adjusting immersion conditions

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000355798A (ja) * 1999-06-15 2000-12-26 Dainippon Screen Mfg Co Ltd 基板メッキ装置
JP2001123291A (ja) * 1999-10-25 2001-05-08 Hitachi Ltd めっき方法及び装置
JP2007534175A (ja) * 2004-04-21 2007-11-22 インテル・コーポレーション 感光性誘電体層を分解することによる相互接続構造の形成
JP2008007830A (ja) * 2006-06-30 2008-01-17 Fujitsu Ltd めっき方法

Also Published As

Publication number Publication date
KR20110056455A (ko) 2011-05-30
US20110174630A1 (en) 2011-07-21
TW201124564A (en) 2011-07-16
JP2011063849A (ja) 2011-03-31

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