TW201124564A - Film-forming method and storage medium - Google Patents

Film-forming method and storage medium Download PDF

Info

Publication number
TW201124564A
TW201124564A TW099131353A TW99131353A TW201124564A TW 201124564 A TW201124564 A TW 201124564A TW 099131353 A TW099131353 A TW 099131353A TW 99131353 A TW99131353 A TW 99131353A TW 201124564 A TW201124564 A TW 201124564A
Authority
TW
Taiwan
Prior art keywords
film
substrate
plating
wafer
electric
Prior art date
Application number
TW099131353A
Other languages
English (en)
Chinese (zh)
Inventor
Yasuhiko Kojima
Shuji Azumo
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201124564A publication Critical patent/TW201124564A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34—Pretreatment of metallic surfaces to be electroplated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/04—Electroplating with moving electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Automation & Control Theory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)
TW099131353A 2009-09-17 2010-09-16 Film-forming method and storage medium TW201124564A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009215415A JP2011063849A (ja) 2009-09-17 2009-09-17 成膜方法および記憶媒体

Publications (1)

Publication Number Publication Date
TW201124564A true TW201124564A (en) 2011-07-16

Family

ID=43758525

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099131353A TW201124564A (en) 2009-09-17 2010-09-16 Film-forming method and storage medium

Country Status (5)

Country Link
US (1) US20110174630A1 (enExample)
JP (1) JP2011063849A (enExample)
KR (1) KR20110056455A (enExample)
TW (1) TW201124564A (enExample)
WO (1) WO2011033916A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8858774B2 (en) 2008-11-07 2014-10-14 Novellus Systems, Inc. Electroplating apparatus for tailored uniformity profile
JP5225957B2 (ja) * 2009-09-17 2013-07-03 東京エレクトロン株式会社 成膜方法および記憶媒体
JP5659041B2 (ja) * 2011-02-24 2015-01-28 東京エレクトロン株式会社 成膜方法および記憶媒体
US9909228B2 (en) * 2012-11-27 2018-03-06 Lam Research Corporation Method and apparatus for dynamic current distribution control during electroplating
JP6678490B2 (ja) * 2016-03-28 2020-04-08 株式会社荏原製作所 めっき方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3856986B2 (ja) * 1999-06-15 2006-12-13 大日本スクリーン製造株式会社 基板メッキ装置
JP3984767B2 (ja) * 1999-10-25 2007-10-03 株式会社日立製作所 めっき装置
US20050006245A1 (en) * 2003-07-08 2005-01-13 Applied Materials, Inc. Multiple-step electrodeposition process for direct copper plating on barrier metals
US20040245107A1 (en) * 2003-06-03 2004-12-09 Guangli Che Method for improving electroplating in sub-0.1um interconnects by adjusting immersion conditions
US7344972B2 (en) * 2004-04-21 2008-03-18 Intel Corporation Photosensitive dielectric layer
JP2008007830A (ja) * 2006-06-30 2008-01-17 Fujitsu Ltd めっき方法

Also Published As

Publication number Publication date
KR20110056455A (ko) 2011-05-30
US20110174630A1 (en) 2011-07-21
WO2011033916A1 (ja) 2011-03-24
JP2011063849A (ja) 2011-03-31

Similar Documents

Publication Publication Date Title
US8377824B1 (en) Methods and apparatus for depositing copper on tungsten
CN105937043B (zh) 用于将铜电沉积到硅通孔内的镍和钴衬垫的预处理
US7300562B2 (en) Platinum alloy using electrochemical deposition
JP6056987B2 (ja) 金属皮膜の成膜装置およびその成膜方法
TWI692552B (zh) 電鍍設備中之電流密度的控制
KR20020005480A (ko) 애노드 코팅 장치 및 방법
JP2004524436A (ja) 電気化学的メッキシステムにおいて使用されるフローディフューザ
JP2022530804A (ja) 半導体デバイス製造における金属の電着中のシード層の保護
US20240023204A1 (en) Coated conductor for heater embedded in ceramic
JP6065886B2 (ja) 金属皮膜の成膜方法
US9945043B2 (en) Electro chemical deposition apparatus
Nagar et al. The effect of cupric ion concentration on the nucleation and growth of copper on RuTa seeded substrates
Evans et al. Electrodeposition of platinum metal on TiN thin films
JP2013524019A (ja) ミクロスケール構造中でのシード層堆積
US20110174630A1 (en) Film formation method and storage medium
US20180266001A1 (en) Layer-by-layer deposition using hydrogen
JP2014098183A (ja) 金属被膜の成膜装置および成膜方法
JP2017218603A (ja) 金属被膜の成膜方法
JP4163728B2 (ja) 電気めっき方法
JP2008098449A (ja) 基板処理装置及び基板処理方法
US10640874B2 (en) Selective electroless electrochemical atomic layer deposition in an aqueous solution without external voltage bias
CN108330518A (zh) 用于填充互连结构的方法及设备
US7544281B2 (en) Uniform current distribution for ECP loading of wafers
KR20130116377A (ko) 액정 디스플레이용 유리 기판 상에 도전성 피쳐들을 제조하는 방법 및 장치
JP2022014177A (ja) 配線基板の製造方法