JP2011063849A - 成膜方法および記憶媒体 - Google Patents
成膜方法および記憶媒体 Download PDFInfo
- Publication number
- JP2011063849A JP2011063849A JP2009215415A JP2009215415A JP2011063849A JP 2011063849 A JP2011063849 A JP 2011063849A JP 2009215415 A JP2009215415 A JP 2009215415A JP 2009215415 A JP2009215415 A JP 2009215415A JP 2011063849 A JP2011063849 A JP 2011063849A
- Authority
- JP
- Japan
- Prior art keywords
- film
- plating solution
- substrate
- plating
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000151 deposition Methods 0.000 title abstract 2
- 238000007747 plating Methods 0.000 claims abstract description 99
- 239000010949 copper Substances 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000009713 electroplating Methods 0.000 claims abstract description 23
- 230000003647 oxidation Effects 0.000 claims abstract description 11
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 11
- 229910000365 copper sulfate Inorganic materials 0.000 claims abstract description 10
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 47
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000010828 elution Methods 0.000 abstract description 3
- 230000008569 process Effects 0.000 description 20
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 230000007246 mechanism Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000005470 impregnation Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- BXCQGSQPWPGFIV-UHFFFAOYSA-N carbon monoxide;cobalt;cobalt(2+);methanone Chemical compound [Co].[Co+2].O=[CH-].O=[CH-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] BXCQGSQPWPGFIV-UHFFFAOYSA-N 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/04—Electroplating with moving electrodes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Automation & Control Theory (AREA)
- Electrodes Of Semiconductors (AREA)
- Electroplating Methods And Accessories (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009215415A JP2011063849A (ja) | 2009-09-17 | 2009-09-17 | 成膜方法および記憶媒体 |
| PCT/JP2010/064572 WO2011033916A1 (ja) | 2009-09-17 | 2010-08-27 | 成膜方法および記憶媒体 |
| KR1020107026850A KR20110056455A (ko) | 2009-09-17 | 2010-08-27 | 성막 방법 및 기억 매체 |
| US13/054,331 US20110174630A1 (en) | 2009-09-17 | 2010-08-27 | Film formation method and storage medium |
| TW099131353A TW201124564A (en) | 2009-09-17 | 2010-09-16 | Film-forming method and storage medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009215415A JP2011063849A (ja) | 2009-09-17 | 2009-09-17 | 成膜方法および記憶媒体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011063849A true JP2011063849A (ja) | 2011-03-31 |
| JP2011063849A5 JP2011063849A5 (enExample) | 2011-05-19 |
Family
ID=43758525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009215415A Withdrawn JP2011063849A (ja) | 2009-09-17 | 2009-09-17 | 成膜方法および記憶媒体 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20110174630A1 (enExample) |
| JP (1) | JP2011063849A (enExample) |
| KR (1) | KR20110056455A (enExample) |
| TW (1) | TW201124564A (enExample) |
| WO (1) | WO2011033916A1 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011063848A (ja) * | 2009-09-17 | 2011-03-31 | Tokyo Electron Ltd | 成膜方法および記憶媒体 |
| JP2014111831A (ja) * | 2012-11-27 | 2014-06-19 | Lam Research Corporation | 電気めっき中の動的な電流分布制御のための方法および装置 |
| US10017869B2 (en) | 2008-11-07 | 2018-07-10 | Novellus Systems, Inc. | Electroplating apparatus for tailored uniformity profile |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5659041B2 (ja) * | 2011-02-24 | 2015-01-28 | 東京エレクトロン株式会社 | 成膜方法および記憶媒体 |
| JP6678490B2 (ja) * | 2016-03-28 | 2020-04-08 | 株式会社荏原製作所 | めっき方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3856986B2 (ja) * | 1999-06-15 | 2006-12-13 | 大日本スクリーン製造株式会社 | 基板メッキ装置 |
| JP3984767B2 (ja) * | 1999-10-25 | 2007-10-03 | 株式会社日立製作所 | めっき装置 |
| US20050006245A1 (en) * | 2003-07-08 | 2005-01-13 | Applied Materials, Inc. | Multiple-step electrodeposition process for direct copper plating on barrier metals |
| US20040245107A1 (en) * | 2003-06-03 | 2004-12-09 | Guangli Che | Method for improving electroplating in sub-0.1um interconnects by adjusting immersion conditions |
| US7344972B2 (en) * | 2004-04-21 | 2008-03-18 | Intel Corporation | Photosensitive dielectric layer |
| JP2008007830A (ja) * | 2006-06-30 | 2008-01-17 | Fujitsu Ltd | めっき方法 |
-
2009
- 2009-09-17 JP JP2009215415A patent/JP2011063849A/ja not_active Withdrawn
-
2010
- 2010-08-27 KR KR1020107026850A patent/KR20110056455A/ko not_active Ceased
- 2010-08-27 WO PCT/JP2010/064572 patent/WO2011033916A1/ja not_active Ceased
- 2010-08-27 US US13/054,331 patent/US20110174630A1/en not_active Abandoned
- 2010-09-16 TW TW099131353A patent/TW201124564A/zh unknown
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10017869B2 (en) | 2008-11-07 | 2018-07-10 | Novellus Systems, Inc. | Electroplating apparatus for tailored uniformity profile |
| US10920335B2 (en) | 2008-11-07 | 2021-02-16 | Novellus Systems, Inc. | Electroplating apparatus for tailored uniformity profile |
| US11549192B2 (en) | 2008-11-07 | 2023-01-10 | Novellus Systems, Inc. | Electroplating apparatus for tailored uniformity profile |
| JP2011063848A (ja) * | 2009-09-17 | 2011-03-31 | Tokyo Electron Ltd | 成膜方法および記憶媒体 |
| JP2014111831A (ja) * | 2012-11-27 | 2014-06-19 | Lam Research Corporation | 電気めっき中の動的な電流分布制御のための方法および装置 |
| US9909228B2 (en) | 2012-11-27 | 2018-03-06 | Lam Research Corporation | Method and apparatus for dynamic current distribution control during electroplating |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20110056455A (ko) | 2011-05-30 |
| WO2011033916A1 (ja) | 2011-03-24 |
| US20110174630A1 (en) | 2011-07-21 |
| TW201124564A (en) | 2011-07-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110405 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110405 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20120824 |