WO2011032938A1 - Procédé et dispositif pour le dépôt local d'un matériau sur un substrat - Google Patents

Procédé et dispositif pour le dépôt local d'un matériau sur un substrat Download PDF

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Publication number
WO2011032938A1
WO2011032938A1 PCT/EP2010/063466 EP2010063466W WO2011032938A1 WO 2011032938 A1 WO2011032938 A1 WO 2011032938A1 EP 2010063466 W EP2010063466 W EP 2010063466W WO 2011032938 A1 WO2011032938 A1 WO 2011032938A1
Authority
WO
WIPO (PCT)
Prior art keywords
intermediate carrier
substrate
radiation
microstructured
deposition
Prior art date
Application number
PCT/EP2010/063466
Other languages
German (de)
English (en)
Inventor
Harald Gross
Original Assignee
Von Ardenne Anlagentechnik Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102009041324A external-priority patent/DE102009041324A1/de
Application filed by Von Ardenne Anlagentechnik Gmbh filed Critical Von Ardenne Anlagentechnik Gmbh
Priority to EP10752817A priority Critical patent/EP2477822A1/fr
Priority to KR1020127009726A priority patent/KR101412181B1/ko
Publication of WO2011032938A1 publication Critical patent/WO2011032938A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing

Definitions

  • OLED organic light emitting diodes
  • Radiation-reflecting layer deposited on an intermediate carrier on the substrate-facing side.
  • Radiation-reflecting or absorbing layers are prevented on the intermediate carrier.
  • Radiation reflective layer are chemically inert to the material to be transferred. This is true
  • the radiation source is designed as a microwave source.
  • the material to be transferred is an inorganic material
  • Elevations is sufficiently high to provide a thermal
  • microstructured subcarrier (mask) 1 are moved.
  • the material yield is only about 30% per organic material 6 for a tricolor screen
  • the organic material 6 of the coated surface of the microstructured subcarrier 1, so not by a light entry through The quartz glass 2 are evaporated so that it comes to heating the entire surface.
  • a Schuein ⁇ device 10 such as a heat radiator. After evaporation of the remaining 70 ⁇ 6 in one
  • Radiation source 8 approximately in the form of a xenon flash, whereby the first material 6 is heated on the intermediate carrier 1 and evaporated. This then deposits on the substrate 7. Subsequently, a second
  • the distance between substrate 7 and intermediate carrier 1 is increased by, for example, 50 ⁇ m, as used in optical lithography.
  • This is followed by a second, energetically high flash to vaporize the on the Subcarrier 1 remaining first material 6, so that the first material 6, the second material 19 on the substrate 7 not only covers, but due to the distance to
  • the intermediate carrier 1 passes through a first region in the vapor space 17, in which the surface is heated to such an extent by light beam focused on a line that the remaining organic material evaporates.
  • the line of the light beam is arranged parallel to the axis of rotation.
  • the intermediate carrier 1 cools in the vapor space so far that again organic material condenses on its surface.
  • the radiation source for generating the line could be located in the interior of the intermediate carrier analogous to the radiation source 8 and be focused on the area in which intermediate carrier 1 and shielding 14 meet in the vapor space 17 on the right side. Also the
  • the coating of the intermediate carrier 1 with a first material 6 takes place by means of a steam pipe 23 of the first evaporation device in a first position.
  • Embodiment is a direct contact of the substrate 7 and the cylindrical intermediate carrier 1 at least in

Abstract

L'invention concerne un procédé et un dispositif pour le dépôt local d'un matériau organique (6) sur un substrat (7) en utilisant un support intermédiaire, un dépôt local du matériau organique (6) s'effectuant à partir du support intermédiaire au moyen d'apport d'énergie par un rayonnement. Le support intermédiaire présente une microstructuration par laquelle le matériau organique (6) est transmis du support intermédiaire au substrat (7) de façon microstructurée.
PCT/EP2010/063466 2009-09-15 2010-09-14 Procédé et dispositif pour le dépôt local d'un matériau sur un substrat WO2011032938A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP10752817A EP2477822A1 (fr) 2009-09-15 2010-09-14 Procédé et dispositif pour le dépôt local d'un matériau sur un substrat
KR1020127009726A KR101412181B1 (ko) 2009-09-15 2010-09-14 기판상에 재료를 국부적으로 증착하기 위한 방법 및 장치

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DE102009041324.3 2009-09-15
DE102009041324A DE102009041324A1 (de) 2009-09-15 2009-09-15 Verfahren und Vorrichtung zur Herstellung von organischen photoaktiven Bauelementen, insbesondere von organischen Leuchtdioden
DE102010028250 2010-04-27
DE102010028250.2 2010-04-27
JP2010-183699 2010-08-19
JP2010183699A JP5323784B2 (ja) 2009-09-15 2010-08-19 微細構造を製造するための方法及び装置

Publications (1)

Publication Number Publication Date
WO2011032938A1 true WO2011032938A1 (fr) 2011-03-24

Family

ID=43234210

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/063466 WO2011032938A1 (fr) 2009-09-15 2010-09-14 Procédé et dispositif pour le dépôt local d'un matériau sur un substrat

Country Status (4)

Country Link
EP (1) EP2477822A1 (fr)
JP (1) JP5323784B2 (fr)
KR (1) KR101412181B1 (fr)
WO (1) WO2011032938A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011101088A1 (de) 2011-05-10 2012-11-15 Von Ardenne Anlagentechnik Gmbh Vorrichtung zum Ausrichten eines Substrates und einer Maske
DE102014109046A1 (de) 2014-06-27 2015-12-31 Von Ardenne Gmbh Transferlithographiemaske und Transferlithographieanlage
US9362503B2 (en) 2014-06-30 2016-06-07 Samsung Display Co., Ltd. Donor mask and method of manufacturing organic light-emitting display apparatus
US9627619B2 (en) 2014-09-03 2017-04-18 Samsung Display Co., Ltd. Thin film forming apparatus and thin film forming method using the same
DE102016105796A1 (de) 2016-03-30 2017-10-05 Leander Kilian Gross Verfahren zur Abscheidung von Mikrostrukturen
US9859247B2 (en) 2012-11-09 2018-01-02 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Method for bonding bare chip dies
CN113299542A (zh) * 2021-05-20 2021-08-24 安徽熙泰智能科技有限公司 一种高分辨率硅基彩色oled微显示器件的制备方法

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Publication number Priority date Publication date Assignee Title
DE102011005707A1 (de) 2011-03-17 2012-09-20 Von Ardenne Anlagentechnik Gmbh Verfahren zur Beschichtung von Substraten mittels eines bewegten Zwischenträgers und Vorrichtung zur Durchführung des Verfahrens
DE102011005714A1 (de) 2011-03-17 2012-09-20 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zur Beschichtung eines Substrats mittels Dampfbeschichtung eines bewegten Zwischenträgers
DE102011082956B4 (de) * 2011-09-19 2015-10-15 Von Ardenne Gmbh Transfermasken zur lokalen Bedampfung von Substraten und Verfahren zu deren Herstellung

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EP0883190A2 (fr) * 1997-06-06 1998-12-09 Eastman Kodak Company Couches organiques configurées dans une matrice d'affichage électroluminescente organique en couleur sur un substrat à matrice de transistors en couche mince
EP1115268A1 (fr) * 1999-07-07 2001-07-11 Sony Corporation Procede et appareil de fabrication d'afficheur electroluminescent organique souple
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EP1650046A1 (fr) * 2004-10-19 2006-04-26 Samsung SDI Co., Ltd. Substrat donneur et méthode utilisant ledit substrat pour fabriquer un dispositif d'affichage électroluminescent organique
US20070151659A1 (en) 2006-01-05 2007-07-05 Joon-Yong Park Method of manufacturing donor film for OLED and method of manfacturing using the donor film
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DE102009007587A1 (de) * 2009-02-05 2009-11-26 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zur Beschichtung von Substraten aus der Dampfphase

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011101088A1 (de) 2011-05-10 2012-11-15 Von Ardenne Anlagentechnik Gmbh Vorrichtung zum Ausrichten eines Substrates und einer Maske
DE102011101088B4 (de) * 2011-05-10 2016-10-27 Von Ardenne Gmbh Vorrichtung zum Ausrichten eines Substrates und einer Maske
US9859247B2 (en) 2012-11-09 2018-01-02 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Method for bonding bare chip dies
DE102014109046A1 (de) 2014-06-27 2015-12-31 Von Ardenne Gmbh Transferlithographiemaske und Transferlithographieanlage
US9362503B2 (en) 2014-06-30 2016-06-07 Samsung Display Co., Ltd. Donor mask and method of manufacturing organic light-emitting display apparatus
US9627619B2 (en) 2014-09-03 2017-04-18 Samsung Display Co., Ltd. Thin film forming apparatus and thin film forming method using the same
DE102016105796A1 (de) 2016-03-30 2017-10-05 Leander Kilian Gross Verfahren zur Abscheidung von Mikrostrukturen
CN113299542A (zh) * 2021-05-20 2021-08-24 安徽熙泰智能科技有限公司 一种高分辨率硅基彩色oled微显示器件的制备方法
CN113299542B (zh) * 2021-05-20 2023-03-10 安徽熙泰智能科技有限公司 一种高分辨率硅基彩色oled微显示器件的制备方法

Also Published As

Publication number Publication date
KR20120078721A (ko) 2012-07-10
JP2011023731A (ja) 2011-02-03
EP2477822A1 (fr) 2012-07-25
JP5323784B2 (ja) 2013-10-23
KR101412181B1 (ko) 2014-06-25

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