WO2017029367A1 - Procédé de fabrication d'un composant optoélectronique et composant optoélectronique - Google Patents

Procédé de fabrication d'un composant optoélectronique et composant optoélectronique Download PDF

Info

Publication number
WO2017029367A1
WO2017029367A1 PCT/EP2016/069633 EP2016069633W WO2017029367A1 WO 2017029367 A1 WO2017029367 A1 WO 2017029367A1 EP 2016069633 W EP2016069633 W EP 2016069633W WO 2017029367 A1 WO2017029367 A1 WO 2017029367A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
heat distribution
optoelectronic component
distribution layer
protective layer
Prior art date
Application number
PCT/EP2016/069633
Other languages
German (de)
English (en)
Inventor
Michael Popp
Dieter Musa
Stefan DECHAND
Original Assignee
Osram Oled Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Oled Gmbh filed Critical Osram Oled Gmbh
Publication of WO2017029367A1 publication Critical patent/WO2017029367A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/87—Arrangements for heating or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/80—Composition varying spatially, e.g. having a spatial gradient

Definitions

  • the invention relates to an optoelectronic component having a heat distribution layer and to a corresponding method for producing the optoelectronic component which is suitable for enabling cost-effective production of the optoelectronic component.
  • Heat distribution layer by spraying in particular cold spraying, is applied and based on a
  • Heat distribution layer and the protective layer is formed.
  • the optoelectronic component extends in a vertical direction between a first and second
  • the vertical direction can extend transversely or perpendicular to the first and / or second main plane.
  • the vertical direction may also be referred to as the stacking direction in which the respective layers of the
  • Optoelectronic component are arranged on each other.
  • the main levels can be a
  • Top surface may be a radiation passage area act of the optoelectronic device.
  • the optoelectronic component is extended substantially in a lateral direction, at least in places, parallel to the main planes, and has a thickness in the vertical direction that is small compared to a maximum
  • the optoelectronic component may, for example, be a light-emitting diode, in particular an organic light-emitting diode (OLED).
  • OLED organic light-emitting diode
  • a substrate is provided.
  • the substrate is suitable as a carrier layer for supporting a layer stack which is arranged on a surface of the substrate.
  • the substrate has a surface opposite this surface, which, for example, forms the bottom surface of the optoelectronic component.
  • the substrate is thus, for example, a mechanical one
  • the substrate may in particular be milky transparent or
  • the substrate may be transparent formed transparent.
  • the substrate may be flexible.
  • the substrate may contain a metal foil, a plastic foil and / or a thin glass or consist of one of these foils (for example polyimide foils).
  • a first electrode layer is applied to the surface of the substrate in the stacking direction.
  • the first Electrode layer may be formed as an electrically conductive layer of a metal and / or an oxide or consist thereof.
  • the first electrode layer is then designed with regard to its material to realize a predetermined electrical conductivity in one operation.
  • the first electrode layer may, for example, be applied to the substrate by means of a physical vapor deposition (PVD) process. After this step, the first electrode layer covers at least a part of the surface of the substrate which faces away from the bottom surface of the optoelectronic component.
  • PVD physical vapor deposition
  • the first electrode layer is transparent, for example.
  • the first electrode layer may comprise a transparent conductive oxide.
  • Transparent conductive oxides are usually metal oxides, such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or indium tin oxide (ITO).
  • the optoelectronic component may then be, for example, a so-called bottom emitter OLED or a transparent OLED.
  • the first electrode layer comprises, for example
  • Nanowire structures For example, the first one
  • Electrode layer in this connection graphs on.
  • the active layer sequence can be applied, for example, by means of so-called inline evaporators in a physical vapor deposition (PVD) process. Alternatively or additionally, the application of the active layer sequence can also be effected by means of a printing process respectively.
  • the active layer sequence covers this
  • Electrode layer which is the bottom surface of the substrate
  • the layer sequence is designed to generate electromagnetic radiation during operation of the optoelectronic component, in particular in one or more active regions.
  • the active layer sequence can produce white or colored light.
  • the layer sequence comprises
  • the optoelectronic component can then be, in particular, an organic light-emitting diode.
  • a second electrode layer is applied to the active
  • the second electrode layer is applied such that the second
  • Electrode layer is arranged without contact to the first electrode layer.
  • the second electrode layer may be formed as an electrically conductive layer of electrically conductive material or consist thereof.
  • Electrode layer may also be formed transparent.
  • the second electrode layer can be applied to the active layer sequence analogously to the first electrode layer by means of a physical vapor deposition process.
  • the second electrode layer covers a surface of the active one after this step
  • a protective layer is applied to the second electrode layer applied.
  • a protective layer can as
  • Particle trapping layer be formed to the underlying
  • Such incoming particles can be considered as
  • the protective layer may be formed one or more layers. It is advantageous
  • the protective layer covers after this
  • Electrode layer which is the bottom surface of the substrate
  • the heat distribution layer is applied to the protective layer by means of cold spraying.
  • Cold spraying forms a transition region between the heat distribution layer and the protective layer in the stacking direction.
  • the transition region is determined by the impinging particles of the heat distribution layer controlled to a predetermined depth in the
  • the heat distribution layer covers a predetermined part of the surface of the protective layer which is the bottom surface of the protective layer
  • the particles which form the heat distribution layer and which are applied to the protective layer have
  • the particles preferably consist of the material from which the heat distribution layer
  • the heat distribution layer is produced, for example, under a pressure of at least
  • the particles for the heat distribution layer are preferably applied at an angle of at least 1 ° or 5 ° or 15 ° and / or of at most 90 ° or 75 ° or 50 ° to the surface of the protective layer. This is preferably done
  • the thickness of the transition region is adjustable.
  • Heat distribution layer is typically at least 0.1 kg / h or 1 kg / h or 3 kg / h and / or at most 10 kg / h or 20 kg / h, for example, based on an area of 1 m ⁇ .
  • Heat distribution layer preferably a middle one
  • the particle velocity may be above a sonic velocity of the surrounding atmosphere to ensure a thick transition region.
  • the particles for the heat distribution layer preferably have one
  • Particle temperature which corresponds approximately to the melting temperature of the material used, for example with a Tolerance of at most 70 ° C or 30 ° C, the melting temperature is particularly preferably just reached or slightly exceeded. That is, the particles can be solid or liquid.
  • the particle temperature is between inclusive
  • the protective layer is preferably not heated and may for example be kept at room temperature or at least at a temperature of at most 120 ° C or 90 ° C or 65 ° C, to prevent damage to the other components of the component to be manufactured
  • the cold spraying is a so-called HVOF spraying, wherein HVOF stands for High Velocity Oxy-Fuel.
  • HVOF stands for High Velocity Oxy-Fuel.
  • the cold spraying can be a cold gas spraying.
  • the heat distribution layer allows, in particular in the case of area light sources, such as OLEDs, a distribution of the
  • the heat distribution layer thus acts to localize an undesirable influence of the resulting heat on electro-optical parameters, such as
  • the transition region is, for example, as a material mixture of material of the protective layer and material of the
  • the transition region has a material gradient that is in
  • Dependence of the application by cold spraying is determined by the material of the heat distribution layer and the protective layer.
  • the cold spraying takes place for example under a given angle of application to a
  • Heat distribution layer applied by cold spraying at a predetermined application rate
  • Angle of application and speed of application affect the formation of the transition region and a
  • Material gradients of the transition region can also by a thickness of the
  • Protective layer and their material and the cold-splashing material of the heat distribution layer can be influenced.
  • Overlap area in the direction of the heat distribution layer for example, exponentially from. Based on the material of the heat distribution layer, the material gradient of the
  • Overlap area in the direction of the heat distribution layer then exponentially and can a material density of the
  • Transition region may also have other properties and be formed controlled among other things by means of the parameters described. In this way, the transition region can be sprayed using cold spraying, for example with respect to the stacking direction, with a thickness in the range of
  • the senor including 25 ym up to and including 100 ym. According to at least one embodiment, the
  • Transition region has a thickness of at least 10% or 25% or 50% and / or of at most 75% or 60% of a thickness of the heat distribution layer and / or the protective layer. As the thickness of the heat distribution layer and / or the
  • Protective layer is in this case the thickness of a
  • Heat distribution layer or the protective layer is present. That is, the thickness of, for example, the protective layer is composed of the area of the protective layer without
  • Heat distribution layer providing a substrate and applying a first electrode layer in
  • Method further comprises applying an active
  • Electrode layer on the active layer sequence The
  • the method further comprises applying a protective layer on the second electrode layer and applying the heat distribution layer in the stacking direction.
  • the heat distribution layer is applied by means of cold spraying and in the stacking direction, a transition region between the
  • Heat distribution layer and the protective layer is formed.
  • Heat distribution layer by means of cold spraying is transferred no significant amount of heat to the optoelectronic device.
  • the method described thus realizes in a simple manner the production of an optoelectronic component, in particular an OLED, with a heat distribution layer, in which a large-area application of a heat-conducting foil by means of lamination can be dispensed with. It is a time-saving and cost-effective production of optoelectronic devices allows, which is advantageous, inter alia, in terms of high visual quality requirements.
  • no adhesive for the adhesion of the heat distribution layer and no additional scratch protection is needed, which is further advantageous to a time-saving and cost-effective production of the
  • the active layer sequence has at least one organic functional layer.
  • the organic functional layer is in terms of its opto-electrical properties
  • Wavelength or emitted in a predetermined wavelength range Wavelength or emitted in a predetermined wavelength range.
  • the heat distribution layer is applied in a structured manner by means of a masking in the lateral direction.
  • the application of the heat distribution layer by means of cold spraying makes it possible to use a mask, so that in a simple manner a predetermined structure or shape of the
  • Heat distribution layer on the protective layer can be realized.
  • An application of the heat distribution layer can take place selectively at predetermined positions of the optoelectronic component.
  • the heat distribution layer can be applied by means of cold spraying structured by the mask with low adjustment effort on the opto-electric device.
  • thermally conductive film and therefore further contributes to a simplified and cost-effective production of the
  • the heat distribution layer does not have to for
  • various areas of the optoelectronic component are applied individually, as for example in a lamination process of a heat distribution layer
  • thermally conductive film covers the entire substrate.
  • masking and cold spraying of the heat distribution layer it is possible by means of masking and cold spraying of the heat distribution layer to apply lettering, emblems or logos and, for example, with respect to the stacking direction, with
  • the heat distribution layer as metal and / or
  • the heat distribution layer may be, for example, as a copper and / or aluminum layer
  • the heat distribution layer may be a
  • the desired material such as AlOx, SiOx and / or TiOx, is then
  • a metal and ceramic layer can be formed by, for example, a metal-ceramic composite is applied by means of cold spraying and a
  • Heat distribution layer forms. For example, thus a desired thermal conductivity can be realized, which is useful depending on the configuration of the optoelectronic device for a uniform distribution of the heat generated during operation.
  • the heat distribution layer can be realized as a single or multi-layer system in which
  • Layer thicknesses are applied by cold spraying, for example, a desired adjustment of
  • the heat distribution layer is applied in the lateral direction to different layer thicknesses.
  • the heat distribution layer applied by means of cold spraying can become thicker or thinner, in particular in an edge area
  • the heat distribution layer may have, in particular, a layer thickness after application by means of cold spraying in a range of from 100 ym up to and including 300 ym and realize a stable and robust optoelectronic device with reliable heat distribution.
  • Such an optoelectronic component is significantly less susceptible to environmental influences, such as
  • the heat distribution layer by means of cold spraying depends on the layer thickness of the protective layer onto which the heat distribution layer is sprayed.
  • Protective layer is formed with a predetermined layer thickness so that when cold spraying the
  • Application angle are adapted to the layer thickness of the protective layer.
  • Heat distribution layer compress the protective layer on the surface and penetrate to a certain depth in the
  • the transition region is formed, for example, with a layer thickness of 20 ym inclusive including up to 50 ym.
  • the formation of the transition region is also dependent on the material of the protective layer and its hardness and can be formed predetermined.
  • the optoelectronic component has a transition region between the heat distribution layer and the protective layer.
  • the optoelectronic component can be produced in particular by one of the previously described methods according to the first aspect, so that all disclosed for the method Characteristics are also disclosed for the optoelectronic component and vice versa.
  • the optoelectronic component has a substrate which is suitable for applying a layer stack.
  • Optoelectronic component also has a first
  • Electrode layer an active layer sequence for generating electromagnetic radiation and a second
  • Electrode layer which are arranged one above the other in the stacking direction.
  • the optoelectronic component further has a protective layer, which on the second
  • Electrode layer is disposed, and the
  • Heat distribution layer which is applied to the protective layer by means of cold spraying and a
  • Transition region has the protective layer.
  • the active layer sequence has at least one organic functional layer.
  • the heat distribution layer is applied structured by means of a masking in the lateral direction.
  • the heat distribution layer as metal and / or
  • the heat distribution layer has a layer thickness ranging from 50 ⁇ m to 4 mm inclusive.
  • the heat distribution layer has a layer thickness in the range of from 100 ym inclusive to 300 ym inclusive.
  • the protective layer has a layer thickness in the range of from 25 ⁇ m to 100 ⁇ m inclusive.
  • the protective layer may be single-layered or multi-layered
  • the protective layer comprises a first layer having a predetermined hardness and a second layer having a predetermined hardness that realizes a high strength coating and is advantageous for subsequent cold spraying of the heat distribution layer.
  • the relatively large layer thicknesses in particular the
  • Protective layer and / or heat distribution layer realize a robust optoelectronic device with useful scratch protection and protection against further damage. Below arranged layers are thus reliably protected and there is a secure encapsulation of the two Achieved electrode layers and arranged therebetween active layer sequence.
  • the heat distribution layer comprises a metal and / or ceramic layer.
  • the optoelectronic component has the
  • the material or material combination is
  • Heat distribution layer is chosen in particular in terms of a desired thermal conductivity to in the
  • the protective layer comprises silicon carbide.
  • Silicon carbide has as an exemplary material for the formation of
  • the protective layer can be made of a metal such as Al, Ti, Cu, W or have or consist of a metal alloy such as CrNi or CrW.
  • metallic composite materials such as WC can be used or oxide ceramics such as AlOx. The same materials, in particular metals such as the metals mentioned and
  • Metal alloys such as the above alloys and Metallic composites such as WC are preferably used for the heat distribution layer.
  • the protective layer has a Shore hardness ranging from D60 to D90 inclusive.
  • the said hardness applies in particular at room temperature and / or under the conditions under which the heat distribution layer
  • the hardness of the protective layer is specified.
  • Heat distribution layer tuned by means of cold spraying and allows a controlled, reliable and safe application of the heat distribution layer and forming the transition region, without underlying layers, such as the first and second electrode layer and the active
  • FIGS 1A - IE different steps of a method for producing an optoelectronic
  • FIGS. 1A to 1E show in a schematic sectional representation various steps of a method for producing such a method
  • FIG. 1A illustrates in a side view the optoelectronic component 1 to be manufactured at a position of a
  • the substrate 3 is as
  • Carrier layer suitable to carry a layer stack suitable to carry a layer stack.
  • the first electrode layer 5, the active layer sequence 7 and the second electrode layer 9 are in one
  • the optoelectronic component 1 extends in a vertical direction between a first and second
  • Main plane wherein the vertical direction is transverse or perpendicular to the first and / or second main plane and substantially corresponds to the stacking direction R, in which the respective layers of the optoelectronic component 1 are arranged one above the other.
  • the main levels can be a
  • Act element 1 At the bottom surface and / or the
  • Top surface can be a radiation passage area of the optoelectronic component 1.
  • Optoelectronic component 1 is essentially in
  • Main planes extended and has in the stacking direction R has a thickness which is small compared to a maximum
  • the optoelectronic component 1 may, for example, be a light-emitting diode, in particular an organic light-emitting diode (OLED).
  • OLED organic light-emitting diode
  • the bottom surface of the optoelectronic component 1 is formed in this embodiment as the surface of the substrate 3, which is the supporting surface. 4
  • the substrate 3 is formed transparent in this context
  • Substrate 3 is, for example, a glass or polymer substrate. Furthermore, the substrate 3 can be flexible
  • Carrier layer can be realized, which is a given
  • the electrode layers 5 and 9 comprise, for example, a conductive oxide, metal or metal oxide, such as
  • Example aluminum silver or indium tin oxide.
  • Electrode layers 5 and 9 may also include alloys, such as an AgMg alloy.
  • Electrode layers 5 and 9 form cathode and anode for the electrical contacting of the optoelectronic
  • the first electrode layer 5 is particularly transparent.
  • the first electrode layer 5 in this context is formed from indium tin oxide (ITO).
  • ITO indium tin oxide
  • the first electrode layer 5 is, for example, thin
  • the optoelectronic component 1 further comprises, for example, electrical contact leads 21, which may be transparent or non-transparent.
  • the electrical contact leads 21 and / or the second electrode layer 9 comprise or consist of one of the following materials: molybdenum / aluminum (Mo / Al), molybdenum (Mo), chromium / aluminum / chromium (Cr / Al / Cr), silver / Magnesium (Ag / Mg), aluminum (AI).
  • the active layer sequence 7 comprises, for example, organic semiconductor material, which is designed, in particular, as organic functional layers for emission of electromagnetic radiation and for the supply of charge carriers.
  • the optoelectronic component 1 is, in particular, an organic light-emitting diode chip with an active region provided for generating electromagnetic radiation (not explicitly shown in the figures for the purpose of simplified illustration).
  • the optoelectronic component 1 further comprises insulator layers 23, which are arranged in the vertical direction between the two electrode layers 5 and 9.
  • the insulator layers 23 are formed, for example, of polyimide. In other embodiments, the insulator layers 23 may be dispensed with,
  • Electrode layer 5 and 9 are arranged without contact to each other.
  • FIG. 1B shows the optoelectronic component 1 after a further production step, after which it additionally has a thin-layer encapsulation 10, which in the stacking direction R acts on the second electrode layer 9
  • the thin-film encapsulation 10 enables an increased service life of the optoelectronic component 1, since it isolates the layers 9, 7 and 5 arranged below from environmental influences. This is particularly advantageous with respect to organic light-emitting diodes, in which an encapsulation of the active layer sequence 7 with one or more organic functional layers is beneficial, since these are particularly sensitive to the action of Moisture and air react.
  • the thin-film encapsulation 10 is, for example, as a thin-film coating (TFE).
  • SiNOx SiNOx and ATO (e.g., AlOx / TiOx).
  • ATO e.g., AlOx / TiOx.
  • Encapsulation "be formed, for example, as glass with indentation in combination with moisture and
  • FIG. 1C shows the optoelectronic component 1 after a further production step, so that the optoelectronic component 1 in the stacking direction R on the
  • Thin-layer encapsulation 10 has a protective layer 11 with a layer thickness Dil.
  • the protective layer 11 is for
  • slot die coating is applied and designed as a particle trap layer in order to protect the thin-film encapsulation 10 arranged thereunder from impinging particles
  • the protective layer 11 is not or at least only penetrate to a negligible extent and thus can not get into the range of Dünn fürverkapselung 10.
  • the protective layer 11 advantageously covers, after this manufacturing step, a surface of the
  • the layer thickness Dil refers to a vertical direction and has, for example, a value in a range of from 25 ym inclusive to 100 ym inclusive.
  • Protective layer 11 can be realized with a relatively large thickness Dil and enables a robust optoelectronic Component 1 with useful protection against further damage.
  • the protective layer 11 has a predetermined material or predetermined material combinations with a certain hardness in order to realize a reliable protection of the optoelectronic component 1.
  • the protective layer 11 has a first layer
  • the first layer is then arranged between the thin-layer encapsulation 10 and the second layer of the protective layer 11.
  • the protective layer 11 is made of silicon carbide, for example, and has a predetermined hardness.
  • the hardness of the protective layer 11, for example, has a value specified by Shore hardness and is in the range of D60 to D90.
  • the hardness of the protective layer 11 is advantageously on the desired protection of the optoelectronic component 1 and in particular on a subsequent application of the
  • Heat distribution layer 13 tuned by means of cold spraying.
  • FIG. 1D shows the optoelectronic component 1 in a production step in which the heat distribution layer 13 is sprayed by means of cold spraying in the stacking direction R on the
  • Heat distribution layer 13 is, for example, at a predetermined application angle W to a surface normal of the protective layer 11 and / or the bottom surface of the substrate 3, so that, for example, a relatively flat coating angle W is selected for relatively soft materials of the protective layer 11.
  • the heat distribution layer 13 by means of Cold spraying depending on a given
  • a transition region 17 between the heat distribution layer 13 and the protective layer 11 is formed in the stacking direction R, the emergence of which by cold penetration of particles and / or material clusters
  • Heat distribution layer 13 is justified.
  • the cold spraying of the heat distribution layer 13 is similar to a spraying process in which ballistic bombardment on the surface of the protective layer 11 with micro and / or nano-particles of the heat distribution layer 13 to be formed takes place.
  • Material of the heat distribution layer 13 is inter alia chosen so that the impinging particles on or in the
  • Protective layer 11 adhere and get caught and thus allow reliable application of the heat distribution layer 13 by means of cold spraying.
  • Heat distribution layer 13 affect the formation of the transition region 17 and realize a
  • Transition region 17 controlled by the impinging particles of the cold sprayed heat distribution layer 13 up to a predetermined depth in the protective layer 11th
  • the transition region 17 After forming the transition region 17 For example, it has a thickness of from 20 ym to 50 ym inclusive.
  • the heat distribution layer 13 after application by means of cold spraying has a layer thickness D13 with a value in a range of between 50 ym and 4 mm inclusive.
  • the heat distribution layer 13 has a layer thickness D13 in the range of from 100 ym inclusive to 300 ym inclusive.
  • the heat distribution layer 13 may laterally also have different layer thicknesses.
  • the thickness D17 of the transition region 17 can, as in the
  • FIGS 1D and IE illustrated as part of the layer thickness D13 of the heat distribution layer 13 are considered. Characterized in that the heat distribution layer 13 and the
  • Protective layer 11 can be formed with relatively large layer thicknesses D13 and Dil, becomes a robust
  • Heat distribution layer 13 has, for example, a metal and / or ceramic layer.
  • a metal and / or ceramic layer For example, it has one or more aluminum and / or copper layers and allows a homogeneous heat distribution of the resulting heat, so that temperature-dependent effects on
  • the heat distribution layer 13 can be applied in a structured manner on the protective layer 11 by means of cold spraying by a masking 15 in the lateral direction.
  • a masking 15 is a simple and inexpensive way a given structure or shape of
  • Heat distribution layer 13 can be realized, so that the
  • predetermined positions of the optoelectronic component 1 can be done.
  • Desired areas such as the electrical contact feeds 21, can be covered so that they are left out at predetermined positions.
  • Heat distribution layer 13 the recessed positions can be made easily accessible again. Consequently, no elaborate ablation steps are necessary to achieve a partial removal of the applied
  • Heat distribution layer 13 to achieve.
  • the application of the heat distribution layer 13 thereby contributes to a
  • Optoelectronic device 1 at.
  • Cold spraying by the masking 15 is reduced, since there is a simple visual control possibility, which is not given in comparison with the application of non-transparent foils.
  • the predetermined masking 15 Among other things, lettering, emblems or logos can be realized by means of cold spraying
  • Heat distribution layer 13 can be formed.
  • FIG. IE shows the optoelectronic component 1 in an exemplary final state after the
  • Heat distribution layer 13 is applied by means of cold spraying at predetermined by the mask 15 positions. In this way is a process for the production of the
  • Heat distribution layer 13 can be realized that a
  • Heat distribution layer occur, in which particles can be pressed in or through the protective layer are prevented.

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne un procédé de fabrication d'un composant optoélectronique (1) pourvu d'une couche de diffusion de chaleur (13). Ledit procédé comprend les étapes suivantes : une fourniture d'un substrat (3), un dépôt d'une première couche d'électrode (5), d'une série de couches actives (7), d'une seconde couche d'électrode (9) et d'une couche de protection (11) dans un sens d'empilage (R). Le procédé comprend en outre le dépôt de la couche de diffusion de chaleur (13) dans le sens d'empilement (R) au moyen d'injections à froid et, par conséquent, une formation d'une zone de transition (17) dans le sens d'empilement (R) entre la couche de diffusion de chaleur (13) et la couche de protection (11).
PCT/EP2016/069633 2015-08-20 2016-08-18 Procédé de fabrication d'un composant optoélectronique et composant optoélectronique WO2017029367A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015113812.3A DE102015113812A1 (de) 2015-08-20 2015-08-20 Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
DE102015113812.3 2015-08-20

Publications (1)

Publication Number Publication Date
WO2017029367A1 true WO2017029367A1 (fr) 2017-02-23

Family

ID=56851553

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2016/069633 WO2017029367A1 (fr) 2015-08-20 2016-08-18 Procédé de fabrication d'un composant optoélectronique et composant optoélectronique

Country Status (2)

Country Link
DE (1) DE102015113812A1 (fr)
WO (1) WO2017029367A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109106190A (zh) * 2017-06-22 2019-01-01 佛山市顺德区美的电热电器制造有限公司 一种ih内锅及其制造方法和烹饪器具

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007277631A (ja) * 2006-04-06 2007-10-25 Konica Minolta Holdings Inc ガスバリア性薄膜積層体の製造方法、ガスバリア性薄膜積層体、ガスバリア性樹脂基材及び有機エレクトロルミネッセンスデバイス
US20080054795A1 (en) * 2004-09-24 2008-03-06 Tadahiro Ohmi Organic El Light Emitting Element, Manufacturing Method Thereof, and Display Device
WO2013104574A1 (fr) * 2012-01-13 2013-07-18 Osram Opto Semiconductors Gmbh Dispositif électroluminescent organique et procédé de traitement d'un dispositif électroluminescent organique

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100771783B1 (ko) * 2006-09-28 2007-10-30 삼성전기주식회사 무수축 세라믹 기판의 제조방법
KR101235302B1 (ko) * 2011-02-16 2013-02-20 서울대학교산학협력단 레이저를 이용한 박막 형성 장치 및 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080054795A1 (en) * 2004-09-24 2008-03-06 Tadahiro Ohmi Organic El Light Emitting Element, Manufacturing Method Thereof, and Display Device
JP2007277631A (ja) * 2006-04-06 2007-10-25 Konica Minolta Holdings Inc ガスバリア性薄膜積層体の製造方法、ガスバリア性薄膜積層体、ガスバリア性樹脂基材及び有機エレクトロルミネッセンスデバイス
WO2013104574A1 (fr) * 2012-01-13 2013-07-18 Osram Opto Semiconductors Gmbh Dispositif électroluminescent organique et procédé de traitement d'un dispositif électroluminescent organique

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109106190A (zh) * 2017-06-22 2019-01-01 佛山市顺德区美的电热电器制造有限公司 一种ih内锅及其制造方法和烹饪器具

Also Published As

Publication number Publication date
DE102015113812A1 (de) 2017-02-23

Similar Documents

Publication Publication Date Title
WO2007003502A2 (fr) Revetement de parylene et procede pour produire un revetement de parylene
DE10324880B4 (de) Verfahren zur Herstellung von OLEDs
WO2005025282A1 (fr) Ensemble a couches minces et son procede de production
WO2020228893A1 (fr) Procédé de fabrication d'une unité d'affichage comprenant un substrat porteur, substrat porteur fabriqué d'après ce procédé ainsi que verre de couverture destiné à une unité d'affichage flexible
WO2011009444A1 (fr) Procédé de fabrication d'un revêtement structuré sur un substrat, substrat revêtu et ébauche présentant un substrat revêtu
DE102008051921A1 (de) Mehrschichtsystem mit Kontaktelementen und Verfahren zum Erstellen eines Kontaktelements für ein Mehrschichtsystem
WO2006082111A1 (fr) Encapsulation de led organiques avec des couches intermediaires absorbant la vapeur d'eau et l'oxygene
DE10222964A1 (de) Verfahren zur Gehäusebildung bei elektronischen Bauteilen sowie so hermetisch verkapselte elektronische Bauteile
EP2294642A1 (fr) Procédé de fabrication d'un composant électronique organique et composant électronique organique
EP1210739A2 (fr) Composants et leur production
EP1629547A1 (fr) Encapsulation pour composant electronique organique et procede de production correspondant
DE102013109646B4 (de) Organisches optoelektronisches Bauelement
DE102015116418A1 (de) Verfahren zum Aufbringen der Schutzschicht, Schutzschicht selbst und Halbfabrikat mit einer Schutzschicht
WO2017029367A1 (fr) Procédé de fabrication d'un composant optoélectronique et composant optoélectronique
DE102015212477A1 (de) Organisches lichtemittierendes Bauelement und Verfahren zur Herstellung eines organischen lichtemittierenden Bauelements
DE102004049955A1 (de) Verfahren zur Herstellung eines optischen Bauelements, insbesondere einer OLED
DE102017107707A1 (de) Verfahren zur Herstellung eines elektronischen Bauelements und elektronisches Bauelement
DE102016108681A1 (de) Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
WO2003087424A1 (fr) Procede de formation de boitiers dans le cadre de composants electroniques et composants electroniques encapsules hermetiquement
WO2007003489A1 (fr) Procede de production d'un revetement de parylene structure et revetement de parylene structure
DE102019112472B3 (de) Verfahren zur Herstellung eines ein Trägersubstrat aufweisenden Displays sowie ein nach diesem Verfahren hergestelltes Trägersubstrat
DE102005044246A1 (de) Verfahren zur Herstellung von Aufdampfglasschichten und verfahrensgemäß hergestelltes Erzeugnis
DE102017117051A1 (de) Organisches Licht emittierendes Bauelement und Licht emittierende Vorrichtung
DE102015106630A1 (de) Organisches lichtemittierendes Bauelement und Verfahren zur Herstellung eines organischen lichtemittierenden Bauelements
WO2016156026A1 (fr) Diode électroluminescente organique et procédé de fabrication d'une diode électroluminescente organique

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16758112

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16758112

Country of ref document: EP

Kind code of ref document: A1