WO2007003489A1 - Procede de production d'un revetement de parylene structure et revetement de parylene structure - Google Patents

Procede de production d'un revetement de parylene structure et revetement de parylene structure Download PDF

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Publication number
WO2007003489A1
WO2007003489A1 PCT/EP2006/063183 EP2006063183W WO2007003489A1 WO 2007003489 A1 WO2007003489 A1 WO 2007003489A1 EP 2006063183 W EP2006063183 W EP 2006063183W WO 2007003489 A1 WO2007003489 A1 WO 2007003489A1
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WO
WIPO (PCT)
Prior art keywords
substrate
structured
parylene
parylene coating
coating
Prior art date
Application number
PCT/EP2006/063183
Other languages
German (de)
English (en)
Inventor
Manfred Fuchs
Karsten Heuser
Ralph Pätzold
Markus Schild
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO2007003489A1 publication Critical patent/WO2007003489A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings

Definitions

  • the present invention relates to a method for producing a structured coating with parylene.
  • the invention relates to a method for producing a structured coating by means of parylene C, which occurs by adjusting the temperature of the substrate for the structured deposition of the parylene.
  • Parylene, and especially parylene C has been shown to have one of the lowest permeation rates for water vapor with respect to organic layers.
  • Parylene is the name of a completely linear, semi-crystalline and uncrosslinked polymer group. Since the discovery of a manufacturing process in the mid-20th century, this family of polymers has been growing ever larger. Although the various groups have different properties, the four industrially used types of pa- rylene have a geometry-compliant substrate coating without air inclusions. Parylen N
  • Parylene C (chloro-poly-para-xylylene) is the variant most used for coatings. It has a chloroatom on the benzene ring compared to parylene N.
  • parylene C compared to parylene N is much faster, but the trench coating is not so good.
  • the melting point of parylene C is the lowest of the parylene species mentioned above.
  • the parylene coating is carried out in a vacuum coating plant by means of a CVD process (chemical vapor deposition process) (see FIG. 1).
  • the system has in principle three different temperature and pressure ranges, which are interconnected.
  • a cold trap in which the substrate is located on a substrate holder, followed by a vacuum pump is installed.
  • parylene C is applied uniformly and conformally and is thus also suitable for 3D structures.
  • the substrate completely coated first and then removed the coating at defined locations.
  • This removal can take place by various methods, for example by etching away by a plasma system or by removal of the parylene by means of laser ablation.
  • the most used method is by means of structuring by shadow masks, here is the
  • Disadvantage shows that during the coating with parylene a film is produced which covers the mask and the substrate and thus also bonds.
  • the present invention teaches that a method for producing a structured parylene coating on a substrate is provided, which comprises the steps:
  • the differential adjustability of the temperature of the substrate holder in the method of the present invention provides the advantage of a structured coating since the coating with parylene on a substrate is highly dependent on the temperature of the substrate.
  • the growth rate of a parylene layer increase by more than an order of magnitude. If, for example, the substrate is cooled via the substrate holder, but defined subregions of the substrate are heated, for example, by means of a heating wire, then it can be achieved that only the defined cooler regions of the substrate are coated with parylene.
  • the geometry of a recess on the component to be coated can be optimally controlled by a suitable choice of the substrate temperature.
  • the substrate temperature of the substrate holder is differentially adjustable in previously defined regions by means of at least one heating wire.
  • the parylene coating of the present invention takes place in previously defined areas and there is no formation of a spoiler edge between the coated and uncoated area.
  • the Sub- strattemperatur of the substrate holder in a predefined range between -100 and +100 0 0 C C is in the method for producing a structured parylene coating on a substrate.
  • Substrate temperature of the substrate holder is preferably in a range between -2O 0 C and + 2O 0 C.
  • the structured parylene coating corresponds to an encapsulation.
  • the method for encapsulating at least one x-ray converter is used. This has the advantage that sensitive electronic and optical components can be inexpensively and easily coated.
  • the substrate comprises at least one printed circuit board.
  • the photodetectors embedded in the substrate are electrically contacted after the encapsulation.
  • Heating wire is contacted by means of an adhesive film on the substrate. This has the advantage that in the method of the present invention, the heating wire on the substrate can be easily attached and removed.
  • At least one metal line is applied to the substrate by means of a shadow mask.
  • edge regions between a structured parylene coating and an uncoated region are coated by means of a metal line.
  • parylene preferably a parylene C comprises.
  • the structured parylene coating by means of a CVD (chemical vapor deposition) process takes place.
  • CVD chemical vapor deposition
  • the structured parylene coating takes place by means of a VDP polymerization (vapor deposition polymerization).
  • the structured parylene coating takes place by means of a PVD process (Physical Vapor Deposition Process).
  • the structured parylene coating for encapsulating at least one x-ray converter by means of a reflective metal layer and parylene C multilayer system.
  • the structured parylene coating is used for encapsulating at least one printed circuit board and / or one electronic component.
  • the present invention teaches a structured par- rylene coating applied to a substrate, wherein the patterned parylene coating has areas of variable thickness and wherein the substrate has areas that are uncoated.
  • the substrate comprises a circuit board. This has the advantage that the present invention can be used in many ways.
  • the substrate comprises at least one X-ray converter. This has the advantage that the present invention can be used in many ways. According to another aspect of the present invention, it is preferable that the substrate comprises at least one photodetector. This has the advantage that the present invention can be used in many ways.
  • the structured parylene coating comprises parylene C. This has the advantage that the present invention can be used in many ways and produced inexpensively.
  • the substrate is electrically contactable in an uncoated area. This results in the advantage that the present invention can be used in an application-specific manner.
  • the structured parylene coating is used for encapsulating at least one printed circuit board and / or one electronic component and / or one X-ray converter. This has the advantage that the present invention can be used in many ways.
  • FIG. 1 shows a schematic structure of a prior art parylene coating vacuum coating system.
  • FIG. 1a shows a schematic structure of a preferred embodiment of a vacuum coating system for coating with parylene, wherein a cooling device or a heating device is mounted on the substrate.
  • FIG. 2 shows a schematic plan view of an electronic component which is applied or embedded on a substrate and provided with a heating device or cooling device.
  • FIG. 3 shows a schematic plan view of an electronic component which is applied or embedded on a substrate and having a
  • Cooling or heating device is provided after it has been coated with parylene.
  • FIG. 4 shows a schematic plan view of an electronic component which is applied or embedded on a substrate and provided with a cooling or heating device after the electrical contacting has been effected by means of a metal contact.
  • FIG. Figure 5 shows a schematic plan view of a substrate which has been coated with parylene, with the vacant locations heated.
  • FIG. Fig. 6 shows a schematic plan view of a substrate which has been coated with parylene, wherein the coated sites have been cooled.
  • FIG. 7 shows a schematic side view of a structured parylene coating applied to a substrate.
  • FIG. 1 shows a schematic structure of a prior art parylene coating vacuum coating system.
  • a coating system is shown which has a vaporization or evaporation section in its first region, a second region which serves for the pyrolysis of the parylene and a third region which serves for the polymerization of the parylene.
  • the polymerization section is adjoined by a cold trap, which has a substrate holder together with the substrate introduced, and a vacuum pump, which ensures a corresponding vacuum.
  • the first section of the vaporization or evaporation section contains the unsublimed powdery ground substance of the parylene. At temperatures around 16O 0 C, at a pressure of 10 ⁇ 3 bar, the powder vaporizes and enters the second section, the pyrolysis.
  • the sublimate is split at a temperature of 6 655 00 00 CC and a proteinaceous DDrruucckk of about 5 ⁇ 10 4 bar into two reactive monomers.
  • the deposition of the parylene on the substrate surfaces by polymerization of the monomers takes place at room temperature in the third section (recipient).
  • FIG. 1a shows a schematic plan view of an electronic component which is applied or embedded on a substrate and provided with a heating device or a cooling device.
  • a coating system is shown, which has a vaporization or evaporation section in its first region, a second region, which serves for the pyrolysis of the parylene, and a third region, which serves to polymerize the parylene.
  • the polymerization section is adjoined by a cold trap which has a substrate holder together with a substrate introduced, and a vacuum pump which ensures a corresponding vacuum.
  • the first section of the vaporization or evaporation section contains the unsublimated powdery parent of the parylene. At temperatures around 16O 0 C, at a pressure of 10 ⁇ 3 bar, the powder vaporizes and enters the second section, the pyrolysis.
  • the sublimate is split into two bar reactive monomers at a temperature of 00 CC aanndd 6655OO eeiinneemm ssaammpplleess "of about 5 x 10. 4
  • the deposition of the parylene on the substrate surfaces by polymerization of the monomers takes place at room temperature in the third section (recipient).
  • the substrate holder is provided on its upper or lower side with a heating or cooling device. provided device which is in thermal contact with the substrate holder.
  • the heating or cooling device is attached directly to the top or bottom of the substrate by means of an adhesive film or other adhesive.
  • the geometry of the heating or cooling device can be formed as desired and designed for the corresponding application purpose.
  • the substrate temperature of the heated substrate holder or the substrate can be in a range between-100 0 C and + 100 0 C, preferably in a range between - 2O 0 C and + 2O 0 C.
  • any basic structure of an electronic component such as a printed circuit board can be used, wherein in the substrate an electronic
  • Component such as a photodetector or an X-ray converter can be embedded.
  • FIG. 2 shows a schematic plan view of an electronic component 22, such as a photodetector or an X-ray converter, which is applied or embedded on a substrate 21 and wherein a heater 23 or a cooling device 23 is applied to the surface of the substrate 21 facing away from the substrate holder.
  • an electronic component 22 such as a photodetector or an X-ray converter
  • heating device 23 or cooling device 23 may be located on the side facing the substrate holder 10.
  • the heater 23 or cooling device 23 serves to achieve a corresponding growth rate of the parylene on previously defined regions of the substrate. This results in a higher temperature on a cooled substrate area Growth rate and better adhesion of parylene than on a heated part where no parylene coating occurs.
  • FIG. 3 shows a schematic plan view of an electronic component 32, such as a photodetector or an X-ray converter, which is applied or embedded on a substrate 31 and provided with a heater 33, such as a heating wire, after being coated with parylene.
  • an electronic component 32 such as a photodetector or an X-ray converter
  • a heater 33 such as a heating wire
  • the electronic component 32 and the substrate 31 have been coated with parylene. Whereas, the area of the substrate heated by the heater 33 has not been coated.
  • FIG. 4 shows a schematic plan view of an electronic component 42, such as a photodetector or an X-ray converter, which is applied or embedded on a substrate 41 and provided with a cooling or heating device 33 after the electrical contact is effected by means of a metal contact 43 is. Due to the cooling or heating device 33, the absorption coefficient of parylene and thus its growth rate on the substrate 41 can be controlled. This results in the advantage that the applied on the substrate 41 parylene, due to the temperature gradient between the heated and unheated area on the substrate, assumes a uniformly rising shape that does not form tear-off edges.
  • an electronic component 42 such as a photodetector or an X-ray converter
  • a metal line is applied in the uncoated area by means of a shadow mask, whereby the areas where the parylene layer is thinned are co-coated.
  • FIG. Figure 5 shows a schematic plan view of one embodiment of a coating of parylene on a substrate 11 which has been coated with parylene, with the vacancies 52 heated.
  • the adsorption coefficient of parylene, and hence the growth rate of a parylene layer on the substrate 11, is temperature-dependent, thus resulting in no coating of parylene in the heated regions 52 on the substrate 11.
  • FIG. Fig. 6 shows an embodiment of a schematic plan view of a substrate 11 which has been coated with parylene, wherein the coated areas 62 have been cooled.
  • the adsorption coefficient of parylene and thus the growth rate of a parylene layer on the substrate 11 are temperature-dependent. dependent, with which there is no coating of parylene in the warmer areas 61 on the substrate 11.
  • FIG. 7 shows a schematic side view of a structured parylene coating 70 applied to a substrate 71.
  • the substrate 71 may be a printed circuit board and / or an X-ray converter and / or a photodetector.
  • the structured parylene coating 70 which is applied to a substrate 71, has areas with variable layer thickness 72 and also areas 73 on the substrate 71 which are uncoated.
  • the structured parylene coating 70 can be produced by means of the previously described method according to claims 1 to 19.
  • the structuring of the parylene coating 70 results from the application of a heating wire and / or cooling in predefined regions of the substrate 71. As a result, the parylene does not deposit on the substrate 71 as a result of the heating.
  • the parylene coating 70 adheres to the substrate 71 in areas where the substrate 71 is cooled.
  • the corresponding cooling and heating areas on the parylene result in a desired structuring.
  • the structured parylene coating in the uncoated region 73 has no tear-off edge.
  • the patterned parylene coating 70 is electrically contactable in an uncoated region 73 according to the preceding ones.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention concerne un procédé de production d'un revêtement de parylène structuré sur un substrat. Ce procédé comporte les étapes suivantes: évaporation de parylène; pyrolyse du parylène évaporé; polymérisation du parylène pyrolysé; refroidissement du parylène polymérisé et dépôt du parylène refroidi sur un substrat. L'invention est caractérisée en ce que le réglage de la température du substrat permet le dépôt structuré du parylène. Cela permet d'obtenir l'avantage suivant : ce procédé permet d'encapsuler de manière anticorrosive, par exemple, un convertisseur des rayons X et d'effectuer de manière simple un contact électrique à l'aide de contacts métalliques ultérieurs.
PCT/EP2006/063183 2005-07-01 2006-06-14 Procede de production d'un revetement de parylene structure et revetement de parylene structure WO2007003489A1 (fr)

Applications Claiming Priority (2)

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DE102005030832 2005-07-01
DE102005030832.5 2005-07-01

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WO2007003489A1 true WO2007003489A1 (fr) 2007-01-11

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009047632A2 (fr) * 2007-10-12 2009-04-16 The Laryngeal Mask Company Limited Dispositif de masque respiratoire laryngien comprenant du parylène
DE102017214267A1 (de) * 2017-08-16 2019-02-21 Mahle International Gmbh Kühlvorrichtung und Verfahren zum Herstellen der Kühlvorrichtung
DE102021133627A1 (de) 2021-12-17 2023-06-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Vorrichtung zum Beschichten eines bandförmigen Substrates mit einer Parylene-Schicht

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5556473A (en) * 1995-10-27 1996-09-17 Specialty Coating Systems, Inc. Parylene deposition apparatus including dry vacuum pump system and downstream cold trap
EP0945897A1 (fr) * 1998-03-25 1999-09-29 Texas Instruments Incorporated Parois latérales de grille d'espacement
WO1999065617A1 (fr) * 1998-06-15 1999-12-23 Applied Materials, Inc. Depot chimique en phase vapeur d'un copolymere de p-xylylene et d'un comonomere multivynyle silicium/oxygene
WO2001067996A2 (fr) * 2000-03-15 2001-09-20 American Medical Systems, Inc. Elements recouverts de parylene destines a une prothese penienne gonflable
US20030028076A1 (en) * 2000-03-15 2003-02-06 Kuyava Charles C. Parylene coated components for artificial sphincters
WO2005045470A2 (fr) * 2003-10-27 2005-05-19 California Institute Of Technology Capteurs a base de parylene pyrolysee, et methode de fabrication

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5556473A (en) * 1995-10-27 1996-09-17 Specialty Coating Systems, Inc. Parylene deposition apparatus including dry vacuum pump system and downstream cold trap
EP0945897A1 (fr) * 1998-03-25 1999-09-29 Texas Instruments Incorporated Parois latérales de grille d'espacement
WO1999065617A1 (fr) * 1998-06-15 1999-12-23 Applied Materials, Inc. Depot chimique en phase vapeur d'un copolymere de p-xylylene et d'un comonomere multivynyle silicium/oxygene
WO2001067996A2 (fr) * 2000-03-15 2001-09-20 American Medical Systems, Inc. Elements recouverts de parylene destines a une prothese penienne gonflable
US20030028076A1 (en) * 2000-03-15 2003-02-06 Kuyava Charles C. Parylene coated components for artificial sphincters
WO2005045470A2 (fr) * 2003-10-27 2005-05-19 California Institute Of Technology Capteurs a base de parylene pyrolysee, et methode de fabrication

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009047632A2 (fr) * 2007-10-12 2009-04-16 The Laryngeal Mask Company Limited Dispositif de masque respiratoire laryngien comprenant du parylène
WO2009047632A3 (fr) * 2007-10-12 2009-05-28 Laryngeal Mask Co Ltd Dispositif de masque respiratoire laryngien comprenant du parylène
DE102017214267A1 (de) * 2017-08-16 2019-02-21 Mahle International Gmbh Kühlvorrichtung und Verfahren zum Herstellen der Kühlvorrichtung
DE102021133627A1 (de) 2021-12-17 2023-06-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Vorrichtung zum Beschichten eines bandförmigen Substrates mit einer Parylene-Schicht
WO2023110188A1 (fr) 2021-12-17 2023-06-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Dispositif pour le revêtement d'un substrat en forme de bande par une couche de parylène

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