EP2699706A1 - Procédé de dépôt d'un système de couches barrière transparentes - Google Patents

Procédé de dépôt d'un système de couches barrière transparentes

Info

Publication number
EP2699706A1
EP2699706A1 EP12706511.8A EP12706511A EP2699706A1 EP 2699706 A1 EP2699706 A1 EP 2699706A1 EP 12706511 A EP12706511 A EP 12706511A EP 2699706 A1 EP2699706 A1 EP 2699706A1
Authority
EP
European Patent Office
Prior art keywords
layer
barrier
vacuum chamber
plasma
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12706511.8A
Other languages
German (de)
English (en)
Inventor
Steffen Günther
Björn MEYER
Steffen Straach
Thomas Kühnel
Sebastian Bunk
Nicolas Schiller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Publication of EP2699706A1 publication Critical patent/EP2699706A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/40—Coatings including alternating layers following a pattern, a periodic or defined repetition
    • C23C28/42—Coatings including alternating layers following a pattern, a periodic or defined repetition characterized by the composition of the alternating layers

Definitions

  • the invention relates to a method for depositing a transparent layer system with a barrier action against water vapor and oxygen.
  • barrier layer permeation barrier layer
  • Barrier layers sometimes impose very different resistance on various permeating substances.
  • OTR oxygen
  • WVTR water vapor
  • barrier layers By coating with a barrier layer, the permeation through a coated substrate over an uncoated substrate is reduced by a factor that is in the single-digit range or can be many orders of magnitude.
  • various other target parameters are also expected from a barrier layer. Examples of this are optical, mechanical and technological-economic requirements.
  • barrier layers should often be almost completely transparent in the visible spectral range or beyond. Become Barrier layers used in layer systems, it is often advantageous if
  • Coating steps for applying individual parts of the layer system can be combined with each other.
  • PECVD processes plasma-enhanced chemical vapor deposition
  • These can be used for coating a wide variety of substrates for different layer materials.
  • Si0 2 and Si 3 N 4 layers having a thickness of 20 to 30 nm on 1 ⁇ PET substrates [AS da Silva Sobrinho et al., J. Vac. Be. Technol. A 1 6 (6), Nov / Dec 1998, p. 31 90-31 98].
  • barrier layers by sputtering. Sputtered monolayers often show better barrier properties than PECVD films.
  • WVTR 0.2 g / m 2 d and
  • PECVD processes that are directly maintained by the plasma of a magnetron discharge.
  • An example of this is the use of a magnetron plasma for PECVD coating for
  • barrier layers or barrier layer systems in several coating steps.
  • One method of this genus is the so-called PML (polymer multilayer) process (1999 Materials Research Society, pp. 247-254); [J. D.
  • a liquid acrylate film is applied to a substrate by means of an evaporator, which is cured by means of electron beam or UV irradiation. This film itself does not have a particularly high barrier effect. Subsequently, a coating of the cured acrylate film with an oxidic intermediate layer, on which in turn an acrylate film is applied. This procedure is repeated several times if necessary.
  • the invention is therefore the technical problem of providing a method with which the disadvantages of the prior art are overcome.
  • the method is intended to provide a transparent barrier layer system with a high blocking effect be produced with respect to oxygen and water vapor and a high coating rate.
  • a transparent barrier layer system In a method according to the invention for producing a transparent barrier layer system, at least two transparent barrier layers are deposited within a vacuum chamber on a transparent plastic film, between which also a transparent intermediate layer is embedded.
  • aluminum is vaporized within the vacuum chamber in a reactive process by simultaneously introducing at least one reactive gas, such as oxygen or nitrogen, into the vacuum chamber during the evaporation of the aluminum.
  • a silicon-containing layer is embedded between the two barrier layers, which is deposited by means of a plasma-assisted CVD process.
  • Such processes are also referred to as PECVD processes.
  • Silicon-containing precursors such as HMDSO, HMDSN or TEOS are particularly suitable as starting materials for the PECVD process. In this way, an organically crosslinked silicon-containing intermediate layer is formed, which gives the resulting barrier composite due to the organic crosslinking in the intermediate layer a higher elasticity compared to a composite without this intermediate layer.
  • hollow cathodes or magnetrons can be used.
  • a magnetron is used as the plasma-generating device, from whose target particles are dusted, which are involved in the layer structure of the intermediate layer. It should be expressly mentioned at this point that the dusting of particles of a target belonging to the magnetron is not essential to the invention.
  • a magnetron in the PECVD process of a method according to the invention is superficially used to generate a plasma, which splits the starting materials introduced into the vacuum chamber and excites the chemical layer deposition. During the PECVD process, reactive gases, such as oxygen and / or nitrogen, can additionally be introduced into the vacuum chamber.
  • a transparent barrier layer system deposited by the method according to the invention is furthermore distinguished by a high barrier effect to water vapor and oxygen, it also being possible for the layer system to be deposited with the high coating rates known for evaporation and for PECVD processes.
  • barrier layer systems deposited according to the invention are suitable, for example, for encapsulating components in solar cell production or for encapsulating OLEDs and other electronically active materials.
  • the high barrier effect of the layer system deposited according to the invention with respect to water vapor and oxygen is mainly due to the fact that an organically crosslinked silicon-containing layer causes a growth stop of layer defects of a barrier layer deposited thereunder by reactive aluminum evaporation. It is known that once formed layer defects, which arise during the reactive evaporation of aluminum, often grow along with the layer growth through the remaining layer thickness.
  • the organic cross-linked silicon-containing intermediate layer deposited between the barrier layers in the process according to the invention is able to cover the layer defects of the underlying barrier layer so that they do not continue to grow when the second barrier layer overlying the intermediate layer.
  • the barrier effect to water vapor and oxygen can be further increased to a certain degree if the barrier layer and intermediate layer are deposited several times in succession alternately.
  • barrier layer For evaporating the aluminum during the deposition of a barrier layer known evaporation evaporator or electron beam evaporator can be used for the evaporation.
  • the deposition of barrier layers can additionally be assisted by a plasma which penetrates the space between the aluminum evaporator and a plastic film substrate to be coated.
  • hollow cathode plasmas or microwave plasmas are suitable as plasmas.
  • the deposition of barrier layer and intermediate layer can be done either in a vacuum chamber or in two separate vacuum chambers.
  • the barrier effect to water vapor should be increased.
  • the plastic film is coated in a first coating step in a first vacuum chamber with an aluminum oxide layer formed as a barrier layer by evaporating aluminum in the vacuum chamber and at the same time also admitted oxygen with 14.2 slm in the vacuum chamber.
  • the four hollow cathodes are fed with an electrical current of 270 A each.
  • an aluminum oxide layer with a layer thickness of 90 nm is deposited on the plastic film.
  • an intermediate layer is applied to the barrier layer at the same belt speed.
  • the plastic film substrate provided with the barrier layer is passed through a second vacuum chamber, into which the silicon-containing precursor HMDSO flows at 175 sccm and the reactive gas oxygen at 130 sccm.
  • the plasma of a magnetron with a power of 7.5 kW in the second vacuum chamber splits the precursor, activates the split components and thus stimulates them to form a chemical layer on the plastic film provided with the barrier layer.
  • An organically crosslinked, silicon-containing layer grows above the barrier layer.
  • the plasma in this PECVD process is generated by means of a magnetron.
  • a magnetron is also commonly used to produce particles for depositing a layer.
  • this intermediate layer When depositing this intermediate layer according to the inventive method, however, no sputter removal from the magnetron target and thus no contribution to the provision of particles for the layer structure is required.
  • the magnetron is used in this process step only to generate a plasma.
  • a barrier layer and an intermediate layer are deposited on the PET film.
  • Interlayer is hereinafter referred to as dyad.
  • dyad Interlayer Interlayer
  • further barrier layers and intermediate layers were deposited alternately on the plastic film with the abovementioned coating parameters until a total of 5 dyads had been completed. After each dyad, the value for the permeation of water vapor, which is shown in Tab. 1, was determined on the then present composite of plastic film, barrier layers and intermediate layers.
  • the barrier effect on water vapor from dyad to dyad could be improved, which is an indication that the intermediate layers resulting from the process according to the invention effectively interrupt the growth of defects from one barrier layer to the barrier layer deposited above.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un système de couches barrière transparentes, selon lequel, dans une chambre à vide, au moins deux couches barrière transparentes et une couche intermédiaire transparente disposée entre les deux couches barrière transparentes sont déposées sur une feuille de plastique transparent. Selon l'invention, le dépôt des couches barrière consiste à vaporiser de l'aluminium et à introduire simultanément au moins un premier gaz réactif dans la chambre à vide, une couche contenant du silicium étant déposée selon un procédé PECVD pour former la couche intermédiaire.
EP12706511.8A 2011-04-18 2012-02-15 Procédé de dépôt d'un système de couches barrière transparentes Withdrawn EP2699706A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011017403A DE102011017403A1 (de) 2011-04-18 2011-04-18 Verfahren zum Abscheiden eines transparenten Barriereschichtsystems
PCT/EP2012/052624 WO2012143150A1 (fr) 2011-04-18 2012-02-15 Procédé de dépôt d'un système de couches barrière transparentes

Publications (1)

Publication Number Publication Date
EP2699706A1 true EP2699706A1 (fr) 2014-02-26

Family

ID=45774167

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12706511.8A Withdrawn EP2699706A1 (fr) 2011-04-18 2012-02-15 Procédé de dépôt d'un système de couches barrière transparentes

Country Status (7)

Country Link
US (1) US20130287969A1 (fr)
EP (1) EP2699706A1 (fr)
JP (1) JP5930341B2 (fr)
DE (1) DE102011017403A1 (fr)
MX (1) MX2013008809A (fr)
RU (1) RU2583196C2 (fr)
WO (1) WO2012143150A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011017404A1 (de) * 2011-04-18 2012-10-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Abscheiden eines transparenten Barriereschichtsystems
US20170066890A1 (en) * 2014-03-04 2017-03-09 Covestro Deutschland Ag Multi-layer structure having good uv protection and scratch protection
GB2539231B (en) * 2015-06-10 2017-08-23 Semblant Ltd Coated electrical assembly
GB201621177D0 (en) 2016-12-13 2017-01-25 Semblant Ltd Protective coating

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6173881A (ja) * 1984-09-19 1986-04-16 Fuji Electric Co Ltd 気相成長装置
JP2005178137A (ja) * 2003-12-18 2005-07-07 Dainippon Printing Co Ltd ガスバリアフィルムとこれを用いた積層材、画像表示媒体

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60260334A (ja) * 1984-06-07 1985-12-23 東洋インキ製造株式会社 積層体
EP0815283B1 (fr) 1995-03-14 2002-06-19 Eidgenössische Materialprüfungs- und Forschungsanstalt EMPA Depot de couches atrretant la diffusion dans un chambre a plasma a bas pression
DE19548160C1 (de) * 1995-12-22 1997-05-07 Fraunhofer Ges Forschung Verfahren zur Herstellung organisch modifizierter Oxid-, Oxinitrid- oder Nitridschichten durch Vakuumbeschichtung und danach beschichtetes Substrat
US7166366B2 (en) * 2000-01-27 2007-01-23 Incoat Gmbh Protective and/or diffusion barrier layer
DE10153760A1 (de) * 2001-10-31 2003-05-22 Fraunhofer Ges Forschung Verfahren zur Herstellung einer UV-absorbierenden transparenten Abriebschutzschicht
JP4323243B2 (ja) * 2002-08-14 2009-09-02 富士フイルム株式会社 放射線像変換パネル
DE10255822B4 (de) * 2002-11-29 2004-10-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Bedampfen bandförmiger Substrate mit einer transparenten Barriereschicht aus Aluminiumoxid
JP2004224815A (ja) * 2003-01-20 2004-08-12 Fuji Photo Film Co Ltd ガスバリア性積層フィルムの製造方法及びガスバリア性積層フィルム
MXPA05008974A (es) * 2003-02-28 2005-11-04 Tetra Laval Holdings & Finance Aglutinante y laminado de empaque que comprende el mismo.
JP4398265B2 (ja) * 2004-01-27 2010-01-13 三菱樹脂株式会社 ガスバリア性フィルム及びガスバリア性積層体
DE102004005313A1 (de) * 2004-02-02 2005-09-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung eines Ultrabarriere-Schichtsystems
US8034419B2 (en) * 2004-06-30 2011-10-11 General Electric Company Method for making a graded barrier coating
EP1787796B1 (fr) * 2004-08-17 2013-02-13 Dai Nippon Printing Co., Ltd. Film multicouche formant barrière contre les gaz et procédé de production
JP2006097730A (ja) * 2004-09-28 2006-04-13 Bridgestone Corp 寿命予知ホ−ス金具
JP2006272589A (ja) * 2005-03-28 2006-10-12 Toray Ind Inc ガスバリア性フィルムおよびその製造方法
JP2006297730A (ja) * 2005-04-20 2006-11-02 Dainippon Printing Co Ltd ガスバリア性積層体
WO2007026935A1 (fr) * 2005-08-31 2007-03-08 Tohcello Co., Ltd. Film barrière aux gaz, stratifié barrière aux gaz et procédé de production du film ou du stratifié
JP5081416B2 (ja) * 2005-09-26 2012-11-28 ユニチカ株式会社 ガスバリア性積層体
JP5278639B2 (ja) * 2006-12-14 2013-09-04 凸版印刷株式会社 プラズマアシスト蒸着装置
DE102008019665A1 (de) * 2008-04-18 2009-10-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Transparentes Barriereschichtsystem
JP2011046060A (ja) * 2009-08-26 2011-03-10 Fujifilm Corp ガスバリアフィルムおよびガスバリアフィルムの製造方法
CN103476580A (zh) * 2011-03-31 2013-12-25 三菱树脂株式会社 阻气叠层膜及其制造方法
DE102011017404A1 (de) * 2011-04-18 2012-10-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Abscheiden eines transparenten Barriereschichtsystems

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6173881A (ja) * 1984-09-19 1986-04-16 Fuji Electric Co Ltd 気相成長装置
JP2005178137A (ja) * 2003-12-18 2005-07-07 Dainippon Printing Co Ltd ガスバリアフィルムとこれを用いた積層材、画像表示媒体

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2012143150A1 *

Also Published As

Publication number Publication date
WO2012143150A1 (fr) 2012-10-26
RU2013136544A (ru) 2015-02-10
RU2583196C2 (ru) 2016-05-10
JP5930341B2 (ja) 2016-06-08
DE102011017403A1 (de) 2012-10-18
MX2013008809A (es) 2013-10-03
US20130287969A1 (en) 2013-10-31
JP2014517144A (ja) 2014-07-17

Similar Documents

Publication Publication Date Title
EP1711643B1 (fr) Procede de production d'un systeme de couche barriere ultra
EP2288739A1 (fr) Système de couches barrières transparent
EP2699706A1 (fr) Procédé de dépôt d'un système de couches barrière transparentes
EP2288646B1 (fr) Procédé de dépôt d'un revêtement protecteur augmentant la résistance mécanique sur un substrat de matière plastique
EP2699705B1 (fr) Procédé de dépôt d'un système de revêtement de barrière transparente
EP1936004B1 (fr) Films barrières transparents pour l'industrie de l'emballage
EP1849886B1 (fr) Dispositif et procéde de dépôt par plasma de couches en matériau dur
EP2279283A1 (fr) Procédé pour produire un système de couches multicomposant contenant des polymères et des métaux, dispositif et objet revêtu
DE102008028540A1 (de) Verfahren zum Abscheiden einer Gradientenschicht auf einem Kunststoffsubstrat sowie Kunststoffsubstrat mit einer Gradientenschicht
EP2468915B1 (fr) Procédé de séparation de couches diélectriques sous vide et utilisation du procédé
DE10153760A1 (de) Verfahren zur Herstellung einer UV-absorbierenden transparenten Abriebschutzschicht
DE19924108B4 (de) Plasmapolymerbeschichtung und Verfahren zu deren Herstellung
DE102015113542B4 (de) Verfahren zum Ausbilden einer Schicht mit hoher Lichttransmission und/oder niedriger Lichtreflexion
EP1294959B1 (fr) Procede pour produire un ensemble multicouche multifonctionnel sur un substrat en matiere plastique transparent, et ensemble multicouche multifonctionnel produit selon ce procede
EP1655385B1 (fr) Procédé de dépôt de couches optiques
WO2012052073A1 (fr) Procédé pour établir une liaison solide entre un substrat polymère et une couche inorganique
DE10201492B4 (de) Optisches Schichtsystem
WO2021191398A1 (fr) Système de couches barrières et procédé de fabrication d'un système de couches barrières
DE102014118487A1 (de) Verfahren zum Abscheiden eines transparenten Mehrschichtsystems mit Kratzschutzeigenschaften
EP3181721B1 (fr) Procédé de fabrication d'un composite stratifié composé d'une feuille de plastique et d'une couche séparée posée dessus
DE102015109809A1 (de) Beschichtetes Kunststoff-Substrat, organo-elektrisches Bauelement und Verfahren zur Herstellung eines beschichteten Kunststoff-Substrats
DE102006027098A1 (de) Verfahren und Vorrichtung zur Schichtoptimierung mittels Radikale

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20130902

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
17Q First examination report despatched

Effective date: 20160503

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20160914