WO2017029367A1

WO2017029367A1 - Method for producing an optoelectronic component and optoelectronic component

Info

Publication number: WO2017029367A1
Application number: PCT/EP2016/069633
Authority: WO
Inventors: Michael Popp; Dieter Musa; Stefan DECHAND
Original assignee: Osram Oled Gmbh
Priority date: 2015-08-20
Filing date: 2016-08-18
Publication date: 2017-02-23
Also published as: DE102015113812A1

Abstract

The invention relates to a method for producing an optoelectronic component (1) with a heat-distribution layer (13), comprising the steps of: providing a substrate (3), and applying a first electrode layer (5), an active layer sequence (7), a second electrode layer (9) and a protective layer (11) in a stack direction (R). The method also comprises the step of applying the heat-distribution layer (13) in the stack direction (R) by means of cold spraying, and thus forming a transition region (17) in the stack direction (R) between the heat-distribution layer (13) and the protective layer (11).

Description

description

Process for producing an optoelectronic

Component and optoelectronic device

The invention relates to an optoelectronic component having a heat distribution layer and to a corresponding method for producing the optoelectronic component which is suitable for enabling cost-effective production of the optoelectronic component.

According to a first aspect, a method for the

Production of an optoelectronic component with a heat distribution layer an application of the

Heat distribution layer on a protective layer, wherein the

Heat distribution layer by spraying, in particular cold spraying, is applied and based on a

Stacking direction a transition region between the

Heat distribution layer and the protective layer is formed.

The optoelectronic component extends in a vertical direction between a first and second

Main plane, wherein the vertical direction can extend transversely or perpendicular to the first and / or second main plane. The vertical direction may also be referred to as the stacking direction in which the respective layers of the

Optoelectronic component are arranged on each other. For example, the main levels can be a

Top surface and a bottom surface of the optoelectronic

Act element. At the bottom surface and / or the

Top surface may be a radiation passage area act of the optoelectronic device. The

The optoelectronic component is extended substantially in a lateral direction, at least in places, parallel to the main planes, and has a thickness in the vertical direction that is small compared to a maximum

Extension of the optoelectronic component in the lateral direction. The optoelectronic component may, for example, be a light-emitting diode, in particular an organic light-emitting diode (OLED).

In at least one embodiment according to the first aspect, a substrate is provided. The substrate is suitable as a carrier layer for supporting a layer stack which is arranged on a surface of the substrate. The substrate has a surface opposite this surface, which, for example, forms the bottom surface of the optoelectronic component.

The substrate is thus, for example, a mechanical one

supporting structure of the optoelectronic component and as a glass substrate containing or consisting of a glass, or a polymer substrate containing a plastic such as a polymer or composed of formed. The substrate may in particular be milky transparent or

be transparent formed transparent. Furthermore, the substrate may be flexible. In particular, the substrate may contain a metal foil, a plastic foil and / or a thin glass or consist of one of these foils (for example polyimide foils).

In at least one embodiment according to the first aspect, a first electrode layer is applied to the surface of the substrate in the stacking direction. The first Electrode layer may be formed as an electrically conductive layer of a metal and / or an oxide or consist thereof. The first electrode layer is then designed with regard to its material to realize a predetermined electrical conductivity in one operation. The first electrode layer may, for example, be applied to the substrate by means of a physical vapor deposition (PVD) process. After this step, the first electrode layer covers at least a part of the surface of the substrate which faces away from the bottom surface of the optoelectronic component.

The first electrode layer is transparent, for example. In particular, the first electrode layer may comprise a transparent conductive oxide. Transparent conductive oxides are usually metal oxides, such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or indium tin oxide (ITO). The optoelectronic component may then be, for example, a so-called bottom emitter OLED or a transparent OLED. Alternatively or additionally, the first electrode layer comprises, for example

Nanowire structures. For example, the first one

Electrode layer in this connection graphs on.

In at least one embodiment according to the first aspect, an active layer sequence for generating

electromagnetic radiation applied to the first electrode layer. The active layer sequence can be applied, for example, by means of so-called inline evaporators in a physical vapor deposition (PVD) process. Alternatively or additionally, the application of the active layer sequence can also be effected by means of a printing process respectively. The active layer sequence covers this

Step in particular a surface of the first

Electrode layer, which is the bottom surface of the substrate

turned away.

The layer sequence is designed to generate electromagnetic radiation during operation of the optoelectronic component, in particular in one or more active regions. In this case, the active layer sequence can produce white or colored light. The layer sequence comprises

for example, organic functional layers. The optoelectronic component can then be, in particular, an organic light-emitting diode. In at least one embodiment according to the first aspect, a second electrode layer is applied to the active

Layer sequence applied. In particular, the second electrode layer is applied such that the second

Electrode layer is arranged without contact to the first electrode layer. The second electrode layer may be formed as an electrically conductive layer of electrically conductive material or consist thereof. The second

Electrode layer may also be formed transparent. By way of example, the second electrode layer can be applied to the active layer sequence analogously to the first electrode layer by means of a physical vapor deposition process. In particular, the second electrode layer covers a surface of the active one after this step

Layer sequence, which faces away from the bottom surface of the substrate and the optoelectronic component.

In at least one embodiment according to the first aspect, a protective layer is applied to the second electrode layer applied. Such a protective layer can as

Particle trapping layer be formed to the underlying

arranged layers before arriving particles

protect. Such incoming particles can be considered as

be implemented unwanted foreign particles or controlled as introduced particles. The protective layer may be formed one or more layers. It is advantageous

in terms of their material properties designed so that impinging particles can not penetrate the protective layer and can not get into the region of the underlying layers. The protective layer covers after this

Step in particular a surface of the second

Electrode layer, which is the bottom surface of the substrate

turned away.

In at least one embodiment according to the first aspect, the heat distribution layer is applied to the protective layer by means of cold spraying. By applying by means of

Cold spraying forms a transition region between the heat distribution layer and the protective layer in the stacking direction. The transition region is determined by the impinging particles of the heat distribution layer controlled to a predetermined depth in the

Protective layer penetrate and the protective layer only

impress on the surface. Specifically, after this step, the heat distribution layer covers a predetermined part of the surface of the protective layer which is the bottom surface of the protective layer

turned away optoelectronic component. The particles which form the heat distribution layer and which are applied to the protective layer have

for example, a mean diameter of at least 5 ym or 10 ym or 20 ym and / or of at most 150 ym or 70 ym or 50 ym up. In this case, the particles preferably consist of the material from which the heat distribution layer

is formed. The heat distribution layer is produced, for example, under a pressure of at least

1.5 bar or 3 bar and / or at most 8 bar or 5 bar.

The particles for the heat distribution layer are preferably applied at an angle of at least 1 ° or 5 ° or 15 ° and / or of at most 90 ° or 75 ° or 50 ° to the surface of the protective layer. This is preferably done

Apply the particles either very flat, angle

in particular between 1 ° and 15 °, or perpendicular or nearly vertical, angle in particular between 75 ° and 90 °. About the angle, the thickness of the transition region is adjustable.

An order rate of the particles for the

Heat distribution layer is typically at least 0.1 kg / h or 1 kg / h or 3 kg / h and / or at most 10 kg / h or 20 kg / h, for example, based on an area of 1 m ^.

When applied, the particles for the

Heat distribution layer preferably a middle one

Speed of at least 200 m / s or 400 m / s or 600 m / s. Alternatively or additionally, the average speed is at most 1000 m / s or 850 m / s or

700 m / s. The particle velocity may be above a sonic velocity of the surrounding atmosphere to ensure a thick transition region. Before impinging on the protective layer, the particles for the heat distribution layer preferably have one

Particle temperature, which corresponds approximately to the melting temperature of the material used, for example with a Tolerance of at most 70 ° C or 30 ° C, the melting temperature is particularly preferably just reached or slightly exceeded. That is, the particles can be solid or liquid. For example, for a metal such as AI, the particle temperature is between inclusive

660 ° C and 700 ° C. The protective layer is preferably not heated and may for example be kept at room temperature or at least at a temperature of at most 120 ° C or 90 ° C or 65 ° C, to prevent damage to the other components of the component to be manufactured

prevent.

According to at least one embodiment, the cold spraying is a so-called HVOF spraying, wherein HVOF stands for High Velocity Oxy-Fuel. Furthermore, the cold spraying can be a cold gas spraying.

The heat distribution layer allows, in particular in the case of area light sources, such as OLEDs, a distribution of the

resulting heat during operation of the optoelectronic device. The heat distribution layer thus acts to localize an undesirable influence of the resulting heat on electro-optical parameters, such as

Emission wavelength (s), the electro-optical device against.

The transition region is, for example, as a material mixture of material of the protective layer and material of the

Heat distribution layer formed. For example, the transition region has a material gradient that is in

Dependence of the application by cold spraying is determined by the material of the heat distribution layer and the protective layer. The cold spraying takes place for example under a given angle of application to a

Surface normals of the protective layer and / or the

Bottom surface of the substrate. In addition, the

Heat distribution layer applied by cold spraying at a predetermined application rate.

Angle of application and speed of application affect the formation of the transition region and a

Material gradients of the transition region. Such a material gradient can also by a thickness of the

Protective layer and their material and the cold-splashing material of the heat distribution layer can be influenced.

With respect to the introduced stacking direction and the material of the protective layer, the material gradient of the

Overlap area in the direction of the heat distribution layer, for example, exponentially from. Based on the material of the heat distribution layer, the material gradient of the

Overlap area in the direction of the heat distribution layer then exponentially and can a material density of the

Have material of the heat distribution layer from 0% to 100%. Material gradient and structure of the

Transition region may also have other properties and be formed controlled among other things by means of the parameters described. In this way, the transition region can be sprayed using cold spraying, for example with respect to the stacking direction, with a thickness in the range of

at least 5 ym or 10 ym or 25 ym or 40 ym to

at most 200 ym or 100 ym or 50 ym, in particular

including 25 ym up to and including 100 ym. According to at least one embodiment, the

Transition region has a thickness of at least 10% or 25% or 50% and / or of at most 75% or 60% of a thickness of the heat distribution layer and / or the protective layer. As the thickness of the heat distribution layer and / or the

Protective layer is in this case the thickness of a

Area understood in the material of

Heat distribution layer or the protective layer is present. That is, the thickness of, for example, the protective layer is composed of the area of the protective layer without

Adding material of the heat distribution layer together with the transition region.

In at least one embodiment according to the first aspect, the method for producing a

Optoelectronic device with the

Heat distribution layer providing a substrate and applying a first electrode layer in

Stacking direction on a surface of the substrate. The

Method further comprises applying an active

Layer sequence on a surface of the first

Electrode layer and applying a second

Electrode layer on the active layer sequence. The

The method further comprises applying a protective layer on the second electrode layer and applying the heat distribution layer in the stacking direction. In this case, the heat distribution layer is applied by means of cold spraying and in the stacking direction, a transition region between the

Heat distribution layer and the protective layer is formed.

In this way, a method for her position of an optoelectronic device with a

Heat distribution layer feasible, s one low cost and easy production of the optoelectronic device allows. By applying the

Heat distribution layer by means of cold spraying is transferred no significant amount of heat to the optoelectronic device. In addition, no adhesive layer between

Protective layer and heat distribution layer needed. Thus, visually perceptible errors such as impressions, glitches and scratches are avoided or at least reduced. Such possible damage, as can occur, for example, in a lamination process of the heat distribution layer, in which particles are pressed into or through the protective layer, is counteracted by means of the described method.

The method described thus realizes in a simple manner the production of an optoelectronic component, in particular an OLED, with a heat distribution layer, in which a large-area application of a heat-conducting foil by means of lamination can be dispensed with. It is a time-saving and cost-effective production of optoelectronic devices allows, which is advantageous, inter alia, in terms of high visual quality requirements. The fact that particles of the heat distribution layer are sprayed cold sprayed onto the protective layer, no large-scale action of forces is required, as is the case for example in a lamination process. This allows an improved manufacturing process with fewer failures, as unwanted particles can not be pushed into the protective layer or pushed through the protective layer, damaging other layers. In addition, no adhesive for the adhesion of the heat distribution layer and no additional scratch protection is needed, which is further advantageous to a time-saving and cost-effective production of the

optoelectronic component.

In at least one embodiment according to the first aspect, the active layer sequence has at least one organic functional layer. The organic functional layer is in terms of its opto-electrical properties

designed accordingly, so that the active layer sequence electromagnetic radiation at a given

Wavelength or emitted in a predetermined wavelength range.

In at least one embodiment according to the first aspect, the heat distribution layer is applied in a structured manner by means of a masking in the lateral direction. The application of the heat distribution layer by means of cold spraying makes it possible to use a mask, so that in a simple manner a predetermined structure or shape of the

Heat distribution layer on the protective layer can be realized. An application of the heat distribution layer can take place selectively at predetermined positions of the optoelectronic component.

By means of the masking, for example, desired

Be covered areas so that the heat distribution layer is sprayed controlled at positions on the protective layer, where a distribution of heat is beneficial. For example, it is possible to cover contact areas, which are designed to electrically drive the optoelectronic component, before the cold spraying, so that these before the application of the heat distribution layer

recessed and after application of the heat distribution layer are accessible again without any special effort. It is Consequently, no costly partial removal of the applied heat distribution layer necessary to

Make contact areas of the optoelectronic device accessible again. The method described thus makes it possible to save subsequent process steps, and thereby further contributes to a cost-effective and time-saving production of the optoelectronic component.

The heat distribution layer can be applied by means of cold spraying structured by the mask with low adjustment effort on the opto-electric device. The

Masking and application by means of cold spraying

realize a simple visual control, which, for example, when applying intransparent or

slightly transparent foils is not given. The

Applying the heat distribution layer by means of cold spraying therefore requires no pre-structuring, as in a

thermally conductive film, and therefore further contributes to a simplified and cost-effective production of the

Opto-electric device at.

In addition, the heat distribution layer does not have to for

various areas of the optoelectronic component are applied individually, as for example in a lamination process of a heat distribution layer

is required, in which a thermally conductive film covers the entire substrate. In addition, it is possible by means of masking and cold spraying of the heat distribution layer to apply lettering, emblems or logos and, for example, with respect to the stacking direction, with

to train different heights. In at least one embodiment according to the first aspect, the heat distribution layer as metal and / or

Ceramic layer formed. The heat distribution layer may be, for example, as a copper and / or aluminum layer

be formed or include such layers. Alternatively or additionally, the heat distribution layer may be a

Have ceramic layer. The desired material, such as AlOx, SiOx and / or TiOx, is then

Cold spray applied to the surface of the protective layer and forms the heat distribution layer with predetermined

Thermal conductivity.

In addition, a metal and ceramic layer can be formed by, for example, a metal-ceramic composite is applied by means of cold spraying and a

Heat distribution layer forms. For example, thus a desired thermal conductivity can be realized, which is useful depending on the configuration of the optoelectronic device for a uniform distribution of the heat generated during operation. The heat distribution layer can be realized as a single or multi-layer system in which

different materials in different

Layer thicknesses are applied by cold spraying, for example, a desired adjustment of

To realize expansion coefficients.

In addition, it is possible at different positions of the optoelectronic component heat distribution layers with different materials by means of cold spraying

apply, if necessary, to realize heat distribution layers with locally different thermal conductivities. In at least one further embodiment according to the first aspect, the heat distribution layer is applied in the lateral direction to different layer thicknesses. The heat distribution layer applied by means of cold spraying can become thicker or thinner, in particular in an edge area

be designed as it is the middle area. In this way, specific heat distribution processes can be realized, which are possibly beneficial for the particular application of the optoelectronic device.

In at least one embodiment according to the first aspect, the heat distribution layer in the stacking direction with a layer thickness in the range of 25 microns inclusive to

including 4 mm applied. The heat distribution layer may have, in particular, a layer thickness after application by means of cold spraying in a range of from 100 ym up to and including 300 ym and realize a stable and robust optoelectronic device with reliable heat distribution.

Such an optoelectronic component is significantly less susceptible to environmental influences, such as

Damage by scratches or other particles, and is due to a relatively thick heat distribution layer advantageous against exposure to moisture, air and pollutants protected. Such a heat distribution layer thus contributes to an increased encapsulation effect of the optoelectronic component with respect to environmental influences.

In at least one embodiment according to the first aspect, the protective layer in the stacking direction with a

Layer thickness in the range of 25 ym inclusive including 100 ym applied. The application of the

Among other things, the heat distribution layer by means of cold spraying depends on the layer thickness of the protective layer onto which the heat distribution layer is sprayed. The

Protective layer is formed with a predetermined layer thickness so that when cold spraying the

Heat distribution layer impacting particles or

Material clusters do not penetrate the protective layer.

Accordingly, the process of cold spraying with respect to an application rate and / or a

Application angle are adapted to the layer thickness of the protective layer.

The particles of the cold spraying impinging

Heat distribution layer compress the protective layer on the surface and penetrate to a certain depth in the

Protective layer. In this way, the transition region is formed, for example, with a layer thickness of 20 ym inclusive including up to 50 ym. In addition, the formation of the transition region is also dependent on the material of the protective layer and its hardness and can be formed predetermined.

According to a second aspect, an optoelectronic

Component with a heat distribution layer indicated, which by means of cold spraying on a protective layer

is applied, so that with respect to a stacking direction, the optoelectronic component has a transition region between the heat distribution layer and the protective layer.

The optoelectronic component can be produced in particular by one of the previously described methods according to the first aspect, so that all disclosed for the method Characteristics are also disclosed for the optoelectronic component and vice versa.

In at least one embodiment according to the second aspect, the optoelectronic component has a substrate which is suitable for applying a layer stack. The

Optoelectronic component also has a first

Electrode layer, an active layer sequence for generating electromagnetic radiation and a second

Electrode layer, which are arranged one above the other in the stacking direction. The optoelectronic component further has a protective layer, which on the second

Electrode layer is disposed, and the

Heat distribution layer, which is applied to the protective layer by means of cold spraying and a

Transition region has the protective layer.

In at least one embodiment according to the second aspect, the active layer sequence has at least one organic functional layer.

In at least one embodiment according to the second aspect, the heat distribution layer is applied structured by means of a masking in the lateral direction.

In at least one embodiment according to the second aspect, the heat distribution layer as metal and / or

Ceramic layer formed.

In at least one embodiment according to the second aspect, a thin film encapsulation between the active

Layer sequence and the protective layer arranged. Such a thin-film encapsulation realizes an increased service life - Il ^¬ the optoelectronic device, since it isolates the layers arranged below environmental influences. This is particularly advantageous with respect to organic light-emitting diodes, in which an encapsulation of the active

Layer sequence with one or more organic

functional layers is beneficial. Such active layer sequences are particularly sensitive to the effects of moisture and air. In at least another embodiment according to the second aspect, the heat distribution layer has a layer thickness ranging from 50 μm to 4 mm inclusive. In particular, the heat distribution layer has a layer thickness in the range of from 100 ym inclusive to 300 ym inclusive.

In at least one further embodiment according to the second aspect, the protective layer has a layer thickness in the range of from 25 μm to 100 μm inclusive. The protective layer may be single-layered or multi-layered

be educated. For example, the protective layer comprises a first layer having a predetermined hardness and a second layer having a predetermined hardness that realizes a high strength coating and is advantageous for subsequent cold spraying of the heat distribution layer.

The relatively large layer thicknesses, in particular the

Protective layer and / or heat distribution layer, realize a robust optoelectronic device with useful scratch protection and protection against further damage. Below arranged layers are thus reliably protected and there is a secure encapsulation of the two Achieved electrode layers and arranged therebetween active layer sequence.

In at least one embodiment according to the second aspect, the heat distribution layer comprises a metal and / or ceramic layer.

In at least one further embodiment according to the second aspect, the optoelectronic component has the

Heat distribution layer with aluminum and / or copper on. The material or material combination is

Heat distribution layer is chosen in particular in terms of a desired thermal conductivity to in the

For example, to realize homogeneous heat distribution and thereby distribute the heat generated during operation of the optoelectronic device useful and dissipate.

In at least one embodiment according to the second aspect, the protective layer comprises silicon carbide. Silicon carbide has as an exemplary material for the formation of

Protective layer useful material properties

especially with respect to a hardness of the protective layer. Other materials and / or material combinations are possible, such as AlOx, TiOx and / or SiOx.

Alternatively or additionally, the protective layer can be made of a metal such as Al, Ti, Cu, W or have or consist of a metal alloy such as CrNi or CrW. Furthermore, metallic composite materials such as WC can be used or oxide ceramics such as AlOx. The same materials, in particular metals such as the metals mentioned and

Metal alloys such as the above alloys and Metallic composites such as WC are preferably used for the heat distribution layer.

In at least one embodiment according to the second aspect, the protective layer has a Shore hardness ranging from D60 to D90 inclusive. The said hardness applies in particular at room temperature and / or under the conditions under which the heat distribution layer

is manufactured and / or under stationary

Operating conditions of the finished component. The or the materials of the protective layer are in particular

selected in terms of their hardness, for example, in terms of the Shore hardness of the material

is specified. The hardness of the protective layer is

Advantageously, the application of the

Heat distribution layer tuned by means of cold spraying and allows a controlled, reliable and safe application of the heat distribution layer and forming the transition region, without underlying layers, such as the first and second electrode layer and the active

Layer sequence and the Dünnschichtverkapselung to endanger.

Further features, embodiments and expediencies will become apparent from the following description of

Embodiments in conjunction with the figures.

Show it:

Figures 1A - IE different steps of a method for producing an optoelectronic

Component with heat distribution layer. The same, similar or equivalent elements are indicated in the figures with the same reference numerals. The figures and the proportions of the elements shown in the figures with each other are not as

to scale. Rather, individual elements and in particular layer thicknesses can be exaggerated for better representability and / or better understanding. The components shown in the figures and

Layers can follow each other directly and directly without further, not drawn

Intermediate layers are present, unless otherwise indicated.

An exemplary embodiment of an optoelectronic component 1 with a heat distribution layer 13 will be explained with reference to the following FIGS. 1A to 1E, which in each case show in a schematic sectional representation various steps of a method for producing such a method

represent optoelectronic component 1.

FIG. 1A illustrates in a side view the optoelectronic component 1 to be manufactured at a position of a

Manufacturing process in which it already has a substrate 3, a first electrode layer 5, an active layer sequence 7 for generating electromagnetic radiation and a second electrode layer 9. The substrate 3 is as

Carrier layer suitable to carry a layer stack. The first electrode layer 5, the active layer sequence 7 and the second electrode layer 9 are in one

Stacking direction R on a surface 4 of the substrate 3 are applied. The optoelectronic component 1 extends in a vertical direction between a first and second

Main plane, wherein the vertical direction is transverse or perpendicular to the first and / or second main plane and substantially corresponds to the stacking direction R, in which the respective layers of the optoelectronic component 1 are arranged one above the other.

For example, the main levels can be a

Top surface and a bottom surface of the optoelectronic

Act element 1. At the bottom surface and / or the

Top surface can be a radiation passage area of the optoelectronic component 1. The

Optoelectronic component 1 is essentially in

lateral direction at least in places parallel to the

Main planes extended and has in the stacking direction R has a thickness which is small compared to a maximum

Extension of the optoelectronic component 1 in the lateral direction. The optoelectronic component 1 may, for example, be a light-emitting diode, in particular an organic light-emitting diode (OLED).

The bottom surface of the optoelectronic component 1 is formed in this embodiment as the surface of the substrate 3, which is the supporting surface. 4

opposite. Through the bottom surface can be generated

emit electromagnetic radiation of the active layer sequence 7, so that the optoelectronic component 1 realizes a so-called "bottom emitter." The substrate 3 is formed transparent in this context

Substrate 3 is, for example, a glass or polymer substrate. Furthermore, the substrate 3 can be flexible

be formed and a metal foil, a plastic film and / or a thin glass or consist of one of these films (for example, polyimide films). In other

Embodiments of the optoelectronic component 1, the bottom surface also by an additional

Carrier layer can be realized, which is a given

Transparency for the passage of electromagnetic

Having radiation.

The electrode layers 5 and 9 comprise, for example, a conductive oxide, metal or metal oxide, such as

Example aluminum, silver or indium tin oxide. The

Electrode layers 5 and 9 may also include alloys, such as an AgMg alloy. The

Electrode layers 5 and 9 form cathode and anode for the electrical contacting of the optoelectronic

Component 1.

The first electrode layer 5 is particularly transparent. By way of example, the first electrode layer 5 in this context is formed from indium tin oxide (ITO). In other exemplary embodiments, the first electrode layer 5 is, for example, thin

Metal layers, metallic network structures or graphene. The optoelectronic component 1 further comprises, for example, electrical contact leads 21, which may be transparent or non-transparent. For example, the electrical contact leads 21 and / or the second electrode layer 9 comprise or consist of one of the following materials: molybdenum / aluminum (Mo / Al), molybdenum (Mo), chromium / aluminum / chromium (Cr / Al / Cr), silver / Magnesium (Ag / Mg), aluminum (AI). The active layer sequence 7 comprises, for example, organic semiconductor material, which is designed, in particular, as organic functional layers for emission of electromagnetic radiation and for the supply of charge carriers. The optoelectronic component 1 is, in particular, an organic light-emitting diode chip with an active region provided for generating electromagnetic radiation (not explicitly shown in the figures for the purpose of simplified illustration).

In this embodiment, the optoelectronic component 1 further comprises insulator layers 23, which are arranged in the vertical direction between the two electrode layers 5 and 9. The insulator layers 23 are formed, for example, of polyimide. In other embodiments, the insulator layers 23 may be dispensed with,

for example, with corresponding mask processes, so that it is ensured that the first and second

Electrode layer 5 and 9 are arranged without contact to each other.

FIG. 1B shows the optoelectronic component 1 after a further production step, after which it additionally has a thin-layer encapsulation 10, which in the stacking direction R acts on the second electrode layer 9

is applied. The thin-film encapsulation 10 enables an increased service life of the optoelectronic component 1, since it isolates the layers 9, 7 and 5 arranged below from environmental influences. This is particularly advantageous with respect to organic light-emitting diodes, in which an encapsulation of the active layer sequence 7 with one or more organic functional layers is beneficial, since these are particularly sensitive to the action of Moisture and air react. The thin-film encapsulation 10 is, for example, as a thin-film coating (TFE).

formed by, for example, SiNOx and ATO (e.g., AlOx / TiOx). Alternatively or additionally, the

Thin-layer encapsulation 10 as so-called "cavity

Encapsulation "be formed, for example, as glass with indentation in combination with moisture and

Oxygen absorbing materials, so-called

Getter materials, realized.

FIG. 1C shows the optoelectronic component 1 after a further production step, so that the optoelectronic component 1 in the stacking direction R on the

Thin-layer encapsulation 10 has a protective layer 11 with a layer thickness Dil. The protective layer 11 is for

For example, the so-called "slot die coating" is applied and designed as a particle trap layer in order to protect the thin-film encapsulation 10 arranged thereunder from impinging particles

Material properties designed so that impinging

Particles the protective layer 11 is not or at least only penetrate to a negligible extent and thus can not get into the range of Dünnschichtverkapselung 10. The protective layer 11 advantageously covers, after this manufacturing step, a surface of the

Thin-layer encapsulation 10 complete.

The layer thickness Dil refers to a vertical direction and has, for example, a value in a range of from 25 ym inclusive to 100 ym inclusive. The

Protective layer 11 can be realized with a relatively large thickness Dil and enables a robust optoelectronic Component 1 with useful protection against further damage.

In addition, the protective layer 11 has a predetermined material or predetermined material combinations with a certain hardness in order to realize a reliable protection of the optoelectronic component 1. For example, the protective layer 11 has a first layer

predetermined hardness and a second layer with a predetermined hardness, which is greater than that of the first layer and realized a kind of high-strength coating. The first layer is then arranged between the thin-layer encapsulation 10 and the second layer of the protective layer 11. The protective layer 11 is made of silicon carbide, for example, and has a predetermined hardness. The hardness of the protective layer 11, for example, has a value specified by Shore hardness and is in the range of D60 to D90. The hardness of the protective layer 11 is advantageously on the desired protection of the optoelectronic component 1 and in particular on a subsequent application of the

Heat distribution layer 13 tuned by means of cold spraying.

FIG. 1D shows the optoelectronic component 1 in a production step in which the heat distribution layer 13 is sprayed by means of cold spraying in the stacking direction R on the

Protective layer 11 is applied. Cold spraying of the

Heat distribution layer 13 is, for example, at a predetermined application angle W to a surface normal of the protective layer 11 and / or the bottom surface of the substrate 3, so that, for example, a relatively flat coating angle W is selected for relatively soft materials of the protective layer 11. In addition, the heat distribution layer 13 by means of Cold spraying depending on a given

Applied application speed G, so that the particles of the heat distribution layer to be formed 13, for example, at several 100 m / s hit the protective layer 11.

By applying the heat distribution layer 13 by means of cold spraying, a transition region 17 between the heat distribution layer 13 and the protective layer 11 is formed in the stacking direction R, the emergence of which by cold penetration of particles and / or material clusters

Heat distribution layer 13 is justified. The cold spraying of the heat distribution layer 13 is similar to a spraying process in which ballistic bombardment on the surface of the protective layer 11 with micro and / or nano-particles of the heat distribution layer 13 to be formed takes place. The

Material of the heat distribution layer 13 is inter alia chosen so that the impinging particles on or in the

Protective layer 11 adhere and get caught and thus allow reliable application of the heat distribution layer 13 by means of cold spraying.

Angle of application W and rate of application G of cold spraying and the material to be sprayed on

Heat distribution layer 13 affect the formation of the transition region 17 and realize a

Material gradients of the transition region 17. The forming of the transition region 17 is also dependent on the

Layer thickness Dil of the protective layer 11 and its material and hardness. Depending on these parameters, the

Transition region 17 controlled by the impinging particles of the cold sprayed heat distribution layer 13 up to a predetermined depth in the protective layer 11th

be formed. After forming the transition region 17 For example, it has a thickness of from 20 ym to 50 ym inclusive.

The heat distribution layer 13 after application by means of cold spraying has a layer thickness D13 with a value in a range of between 50 ym and 4 mm inclusive. In particular, the heat distribution layer 13 has a layer thickness D13 in the range of from 100 ym inclusive to 300 ym inclusive. The heat distribution layer 13 may laterally also have different layer thicknesses. The thickness D17 of the transition region 17 can, as in the

Figures 1D and IE illustrated as part of the layer thickness D13 of the heat distribution layer 13 are considered. Characterized in that the heat distribution layer 13 and the

Protective layer 11 can be formed with relatively large layer thicknesses D13 and Dil, becomes a robust

Optoelectronic component 1 with useful

Scratch protection and protection against further damage. Below arranged layers are thus reliably protected and there is a secure shield of the

Electrode layers 5 and 9, the active layer sequence 7 and the thin-film encapsulation 10 against environmental effects achieved.

Depending on the layer thickness D13 and the material of the heat distribution layer 13 is a desired

Thermal conductivity feasible to a reliable

Distribute and dissipate heat during operation of the optoelectronic device 1 to allow. The

Heat distribution layer 13 has, for example, a metal and / or ceramic layer. For example, it has one or more aluminum and / or copper layers and allows a homogeneous heat distribution of the resulting heat, so that temperature-dependent effects on

electro-optical parameters of the optoelectronic component 1 is counteracted.

In particular, the heat distribution layer 13 can be applied in a structured manner on the protective layer 11 by means of cold spraying by a masking 15 in the lateral direction. By means of the mask 15 is a simple and inexpensive way a given structure or shape of

Heat distribution layer 13 can be realized, so that the

Applying the heat distribution layer 13 targeted

predetermined positions of the optoelectronic component 1 can be done.

Desired areas, such as the electrical contact feeds 21, can be covered so that they are left out at predetermined positions. After applying the

Heat distribution layer 13, the recessed positions can be made easily accessible again. Consequently, no elaborate ablation steps are necessary to achieve a partial removal of the applied

Heat distribution layer 13 to achieve. The application of the heat distribution layer 13 thereby contributes to a

cost-effective and time-saving production of the

Optoelectronic device 1 at.

In addition, an adjustment effort by the

Applying the heat distribution layer 13 by means

Cold spraying by the masking 15 is reduced, since there is a simple visual control possibility, which is not given in comparison with the application of non-transparent foils. By means of the predetermined masking 15 Among other things, lettering, emblems or logos can be realized by means of cold spraying

Heat distribution layer 13 can be formed. FIG. IE shows the optoelectronic component 1 in an exemplary final state after the

Heat distribution layer 13 is applied by means of cold spraying at predetermined by the mask 15 positions. In this way is a process for the production of the

optoelectronic component 1 with the

Heat distribution layer 13 can be realized that a

time-saving, cost-effective and simple production of the optoelectronic component 1 allows. Visual defects, such as impressions, gluing errors and scratches, are avoided or at least reduced and possible damage, such as in a lamination process of the

Heat distribution layer occur, in which particles can be pressed in or through the protective layer are prevented.

The invention is not limited by the description based on the embodiments of these. Rather, the invention encompasses every new feature as well as every combination of features, which in particular includes any combination of features in the patent claims, even if this feature or combination itself is not explicitly described in the claims

Claims or embodiments is given. This patent application claims the priority of German Patent Application 10 2015 113 812.3, the disclosure of which is hereby incorporated by reference. Reference sign list

1 optoelectronic component

3 substrate

4 surface of the substrate

5 first electrode layer

7 layer sequence

9 second electrode layer

10 thin-layer encapsulation

11 protective layer

13 heat distribution layer

15 masking

17 transition area

21 electrical contact feeds

23 insulator layers

Dil layer thickness of the protective layer

D13 layer thickness of the heat distribution layer

D17 Thickness of transition area

G application speed

W Angle of application

R stacking direction

Claims

claims

Process for producing an optoelectronic

A device (1) having a heat distribution layer (13), comprising:

- Providing a substrate (3);

- applying a first electrode layer (5) in a stacking direction (R) on a surface (4) of the substrate (3);

- Applying an active layer sequence (7) in

Stacking direction (R) for generating electromagnetic radiation;

- Applying a second electrode layer (9) in

Stacking direction (R), wherein the protective layer (11) has a Shore hardness ranging from D60 to D90 inclusive;

- Applying a protective layer (11) in the stacking direction (R); and

- Applying the heat distribution layer (13) in

Stacking direction (R), wherein the heat distribution layer (13) is applied by means of cold spraying, and a

Transitional area (17) between the

Heat distribution layer (13) and the protective layer (11) is formed, in which a material of the protective layer and a material of the heat distribution layer are present and which has a thickness in the range of 25 ym to 100 ym inclusive.

Method according to claim 1, wherein the active layer sequence (7) has at least one organic functional layer,

the material for the heat distribution layer (13) being in the form of particles at a rate of at least 400 m / s is applied,

wherein a temperature of the particles during application is at a melting temperature of this material, with a tolerance of the highest 70 ° C, and

wherein when the heat distribution layer (13) is formed, the protective layer (11) has a temperature of at most 120 ° C.

3. The method according to claim 1 or 2, wherein the

Heat distribution layer (13) by means of a mask (15) is applied structured in the lateral direction.

4. The method according to any one of claims 1 to 3, wherein the

Heat distribution layer (13) as metal and / or

Ceramic layer is formed.

5. The method according to any one of claims 1 to 4, wherein the

Heat distribution layer (13) in a lateral direction in different layer thickness (D13) is applied.

6. The method according to any one of claims 1 to 5, wherein the

Heat distribution layer (13) in the stacking direction (R) is applied with a layer thickness (D13) in the range of from 50 ym inclusive to 4 mm inclusive.

7. The method according to any one of claims 1 to 6, wherein the

Protective layer (11) in the stacking direction (R) with a

Layer thickness (Dil) is applied in the range of from 25 ym to 100 ym inclusive.

8. Optoelectronic component (1) with a

A heat distribution layer (13) comprising:

a substrate (3); - A first electrode layer (5), which in a

Stacking direction (R) on a surface (4) of the substrate (3) is arranged;

- An active layer sequence (7) for generating electromagnetic radiation, which is arranged in the stacking direction (R) on the first electrode layer (5);

a second electrode layer (9), which in

Stacking direction (R) on the layer sequence (7) is arranged;

- A protective layer (11) which is arranged in the stacking direction (R) on the second electrode layer (9); and

- The heat distribution layer (13) which is arranged in the stacking direction (R) on the coating (11), wherein the heat distribution layer (13) by means of cold spraying

is applied and in the stacking direction (R) a

Transition region (17) with the protective layer (11)

in which a material of the protective layer (11) and a material of the heat distribution layer (13) are present and which has a thickness in the range of 25% to 75% inclusive of the heat distribution layer (13).

9. The optoelectronic component (1) according to claim 8, wherein the active layer sequence (7) has at least one organic functional layer.

10. The optoelectronic component (1) according to claim 8 or 9, which has a thin-film encapsulation (10) which between the active layer sequence (7) and the

Protective layer (11) is arranged.

11. Optoelectronic component (1) according to one of

Claims 8 to 10, wherein the heat distribution layer (13) has a predetermined structure with laterally different layer thicknesses (D13).

12. Optoelectronic component (1) according to one of

Claims 8 to 11, wherein the heat distribution layer

(13) a layer thickness (D13) in the range of

including 50 ym up to and including 4 mm.

13. Optoelectronic component (1) according to one of

Claims 8 to 12, wherein the protective layer (11) a

Layer thickness (Dil) ranging from 25 ym to 100 ym inclusive.

14. Optoelectronic component (1) according to one of

Claims 8 to 13, wherein the heat distribution layer

(13) has at least one metal and / or ceramic layer.

15. Optoelectronic component (1) according to one of

Claims 8 to 14, wherein the heat distribution layer

(13) aluminum and / or copper.

16. Optoelectronic component (1) according to one of

Claims 8 to 15, wherein the protective layer (11) comprises silicon carbide.

17. Optoelectronic component (1) according to one of

Claims 8 to 16, wherein the protective layer (11) has a Shore hardness ranging from D60 to D90 inclusive.