WO2011032938A1

WO2011032938A1 - Method and device for locally depositing a material on a substrate

Info

Publication number: WO2011032938A1
Application number: PCT/EP2010/063466
Authority: WO
Inventors: Harald Gross
Original assignee: Von Ardenne Anlagentechnik Gmbh
Priority date: 2009-09-15
Filing date: 2010-09-14
Publication date: 2011-03-24
Also published as: KR20120078721A; JP2011023731A; KR101412181B1; EP2477822A1; JP5323784B2

Abstract

The invention relates to a method and a device for locally depositing an organic material (6) on a substrate (7) using an intermediate carrier, wherein the organic material (6) is locally deposited of the intermediate carrier by means of energy input by radiation. The intermediate carrier has a microstructure by means of which the organic material (6) is transferred from the intermediate carrier to the substrate (7) in a microstructured manner.

Description

Method and device for local deposition of a material on a substrate

The invention relates to a method for the local deposition of a material on a substrate using a microstructured intermediate carrier (mask), wherein the

Material is evaporated on a microstructured.

The invention further relates to a device for microstructured, local deposition of a material on a substrate.

The microstructured deposition of materials

Substrates is an enormous one even today

This is especially true for high

Throughputs in production to reduce costs.

Therefore, depending on the minimum desired feature width, various lithography techniques have been developed for maximum throughput. For example, laser ablation is used for minimum feature sizes of one to ten microns at a throughput of 1E-4 m ² / s to 1E-3 m ² / s. On the other hand, offset printing takes place for minimal feature widths of ten to 50 microns and one

Throughput from 1E + 1 m ² / s to 1E + 2 m ² / s application.

For organic materials are still different

Structuring method known in the context of OLED production. Due to the outstanding image reproduction as well as the simple technical structure is the use

organic light emitting diodes (OLED) for screens as

subsequent technology to LCDs or plasma screens. For example, LCDs generally consist of a white light source, a layer of liquid crystals Light switch and a downstream color filter. OLEDs, on the other hand, shine in a specific color and do not require external light sources or color filters.

Through the use of flexible substrates

(flexible substrates, foils), OLEDs offer the possibility of producing roll-up screens, making large screens portable.

Due to their small thickness of a few hundred nanometers, OLEDs can be used well in small, portable devices, such as notebooks, cell phones and MP3 players.

Another advantage is the multiple higher

Switching speed of OLED screens compared to LCDs, which allows a realistic reproduction of fast video sequences, especially for 3D images. OLED displays and OLED TV sets also perform better in terms of transport costs than current LCD and plasma devices due to their lower volume and significantly lower weight.

When using so-called "small molecules" (organic

Materials with a molecular weight of about 100-1000 u) as organic materials in OLEDs should be noted that they are very sensitive to oxygen and water, so that the typical in semiconductor electronics process for structuring, especially optical lithography, can not be used.

For the mass production of small displays with SMOLEDs (Small Molecule Organic Light Emitting Diode) Schat ^¬ tenmasken be used as an alternative method for optical lithography. Examples include cell phones, MP3 players or palmtops. Disadvantages are the high manufacturing ^¬ cost, the high maintenance and the technical still unresolved scaling to large displays or general substrates (different coefficient of thermal expansion of substrate and mask, deflection of the very thin mask, etc.). To scale the difficulty on large substrates is the main reason that there are no masses ^¬ production of computer monitors or television sets.

Also known is the use of the Organic Vapor Jet

Printing (OVJP) (see M. Shtein et al., J. Appl. Phys., 96, 4500 (2004)) in which one or more small vapor nozzles are moved in vacuum in close proximity to a substrate analogous to the inkjet printer.

Other methods such as LITI (Laser Induced Thermal

Imaging) have become due to the associated

technical difficulties and due to the low throughput high costs so far not for the

Mass production proved suitable.

In particular, the laser ablation is a screening method analogous to the inkjet pen, which only one

can achieve significantly lower throughput compared to most other parallel printing processes such as optical lithography.

The US2007 / 0151659 Al discloses a process for the manufacture lung ^¬ a grid on a substrate by a printing process and subsequent LITI treatment.

In US2009 / 0038550 AI a method is described, which includes small heat sources by local evaporation of a large-area organic layer. This

Procedure consists of a mask, which is constructed like a passive matrix display. The production of this mask is much more complicated due to the electrical Supply lines that are required for the heat sources.

In particular, reliability at high temperatures is to be considered critical, since relatively high energies are required for evaporation, diffusion processes change the intrinsic properties of insulators or electrical resistors, or there is a detachment of films due to different coefficients of thermal expansion. Mentioned materials such as polyamides can only be used for relatively low evaporation temperatures. Furthermore, similar laser-based methods for the microstructured deposition of organic materials in OLED production are known.

Thus, in addition to the above-mentioned LITI process, lasers also come within the framework of the Radiation Induced Sublimation Transfer (RIST) process (Non-Contact OLED Color Patterning by Radiation-Induced Sublimation Transfer (RIST), M. Boroson, Eastman Kodak Co., Rochester , NY, USA, SID International Symposium 2005) and the LILT_ method (Laser Induced Local Transfer) (M. Kröger, Device and Process Technology for Full-Color Active Matrix OLED Displays, pp. 71-102, Cuvillier-Verlag, (19 November 2007).

Also, in the context of dye diffusion patterning, lasers are used (patterned dye diffusion using transferred photoresist for polymer OLED displays, Proceedings Vol.

4105, Organic Light-Emitting Materials and Devices IV,

Pp. 59-68; Three-color organic light-emitting diodes

patterned by masked dye diffusion, Applied Physics Letters, 74 (13), pp. 1913-1915).

In principle, it is therefore of great interest to develop a cost-effective lithography method which is suitable for OLEDs, OSCs (Organic Solar Cells) and organic TFTs (Thin Film Transistors) can be used, which are based on "Small Molecules"

developing a high throughput to enable use in mass production. It would also be highly desirable if the method to be developed allows the structured deposition of organic as well as inorganic materials on a substrate.

The object of the present invention is therefore to provide a method and a device which the

Overcome disadvantages of the known production methods.

The object is achieved by a method according to claim 1. Advantageous embodiments are specified in the dependent subclaims. Another object is achieved by a device according to

Claim 17 solved. Advantageous embodiments are specified in the dependent subclaims.

According to the invention, a local deposition of a

Material on a substrate, wherein a local transfer of the material is carried out by an intermediate carrier. The material is thereby transferred microstructured from the intermediate ^carrier to the substrate.

In one embodiment of the invention, the local deposition of the material takes place using a

Subcarrier. The intermediate carrier (mask) in this case has a microstructure. On this microstructure, the material to be transferred is deposited over the entire surface. Subsequently, the transfer of part of the

Material from the intermediate carrier to the substrate by means of an energy input by a radiation. This is the

Material from the intermediate carrier to the substrate accordingly the microstructuring transferred to the intermediate carrier. For the purposes of the invention, a transfer means the transfer of the material from the intermediate carrier to the substrate, the type of transfer, for example evaporation and deposition, contact stamping, etc.,

is irrelevant if the material according to the

Microstructuring is transferred to the substrate.

In one embodiment of the invention, the local deposition of the material is carried out by the microstructured

Intermediate carrier by means of energy input by a radiation, wherein the material is heated and evaporated on the intermediate carrier and then on the substrate

microstructured is deposited. Here is the

Microstructuring on the subcarrier in the form of

Radiation reflecting and absorbing areas formed, wherein the evaporation of the material in the

localized to absorbent areas of the subcarrier. This is done by an energy input in the form of radiation. In one embodiment of the invention, the local evaporation of the microstructured subcarrier takes place by means of energy input by a radiation of the

transferring material opposite side of the

Subcarrier, the microstructuring of the

Radiation reflecting and absorbing areas is formed and the evaporation is localized in the absorbent areas of the subcarrier. The microstructuring formed by the reflecting and absorbing regions can be on the substrate

be arranged facing side of the intermediate carrier as well as on the side facing away from the substrate. In any case, in the reflective areas of the microstructured surface prevents an energy input by the radiation, whereby a local evaporation of deposited on the intermediate carrier materials is prevented. Only in the absorbent areas of the

Microstructuring takes place the local evaporation. in the

The result is the material to be transferred on the substrate as an inverted form of microstructuring

deposited, whereby a negative stamp effect is achieved. In a further embodiment of the invention, the production of a microstructured intermediate carrier takes place first. This is a microstructured

Radiation-reflecting layer deposited on an intermediate carrier on the substrate-facing side.

Due to the partial coating of the surface of the intermediate carrier results in a microstructure with trenches and elevations, wherein the elevations through the

Radiation-reflecting layer are formed. On this radiation-reflecting layer and the uncoated microstructured surface, a second deposition of a radiation-absorbing layer takes place, which is optionally additionally covered with a protective layer. After the microstructured intermediate carrier is completed, then the coating of the protective layer is carried out with the material to be deposited. Finally, there is a local evaporation of the material to be transferred from

Intermediate carrier on the substrate by energy input by means of radiation from the side opposite the coated side of the intermediate carrier. Due to the energy input, the local heating and evaporation takes place

transferring material in the non-reflective

Areas of microstructuring. After vapor deposition of the substrate is the microstructured intermediate carrier further steaming steps available.

In one embodiment of the invention, the local evaporation from the microstructured intermediate carrier takes place by means of energy input by a radiation from the opposite side of the material of the intermediate carrier, wherein the microstructuring of the radiation reflecting

Regions is formed and the local evaporation of the radiation-absorbing material from the microstructured intermediate carrier takes place, whereby a directed

Deposition of the organic materials corresponding to the microstructuring on the substrate results.

In one embodiment of the invention, the local evaporation of the microstructured subcarrier takes place by means of energy input by a radiation of the

transferring material opposite side of the

Intermediate carrier, wherein the microstructuring of the radiation-absorbing areas is formed and the local evaporation of the material to be transferred is carried out by the microstructured intermediate carrier, resulting in a directed deposition of the organic materials according to the microstructuring on the substrate.

In one embodiment of the invention, the local evaporation of the intermediate carrier by means of microstructured energy input by radiation, such as by means of a

Laser beam or a xenon flash tube, from the side opposite to the material to be transferred

Subcarrier, wherein according to the microstructured radiation, a local evaporation of the material to be transferred from the intermediate carrier takes place, resulting in a directed deposition of the materials according to the microstructuring on the substrate. That too überragende material is about one

Radiation absorbing layer deposited. Alternatively, the material may be radiation absorbing.

In one embodiment of the invention, the deposition of a protective layer takes place before the deposition of the

transferring material, such as an organic material, on the intermediate carrier. This protective layer is transparent and at the same time chemically inert with respect to the organic materials to be deposited, whereby possible reactions of the organic material with

Radiation-reflecting or absorbing layers are prevented on the intermediate carrier.

On a corresponding protective layer can be omitted if the radiation-absorbing layer or

Radiation reflective layer are chemically inert to the material to be transferred. This is true

For example, in the case of radiation-absorbing layers of SiC or layers of CrN.

In one embodiment of the invention, the after

Successful deposition of the material to be transferred on the substrate remaining material by a heater, which is arranged on the material-coated side of the surface, heated and evaporated.

As a result, there is a homogeneous vapor distribution and finally a homogeneous deposition of the vaporized

Materials on the microstructured subcarrier.

This will create a new layer of material on the

realized entire surface of the microstructured subcarrier. Subsequently, this layer is available for further coating of the substrate. As a result, the material used for the coating of the

Used substrate. In a further embodiment of the invention, the heating device, which is arranged on the coated with the material to be transferred side of the surface, designed as a heat radiator. In a further embodiment of the invention, the material remaining in the non-reflecting regions of the surface of the intermediate carrier is heated and evaporated by heating the intermediate carrier. After cooling of the intermediate carrier, the deposition of the evaporated material takes place as a homogeneous layer on the

Intermediate carrier.

In a further embodiment of the invention, the radiation input of the radiation source is regulated by a shutter. In a further embodiment of the invention, the microstructuring of the intermediate carrier by a

generates structured deposition of the radiation-reflecting layer.

In a further embodiment of the invention, the structured deposition of the radiation-reflecting layer is effected by lithography.

In a further embodiment, the intermediate carrier is designed to be heatable.

In a further embodiment, the intermediate carrier is cooled by a cooling device.

In a further embodiment of the invention, the microstructured intermediate carrier is designed as a microstructured cylinder. Another embodiment of the invention is as Cylinder listed microstructured intermediate carrier in a vacuum chamber of a continuous coating plant ^¬ assigns, wherein the vacuum chamber has an evaporator for heating and evaporation of material and further provided a shield which is the substrate of the

Evaporator separated, the shield the

microstructured intermediate carrier comprises.

In a further embodiment of the invention, the shield is made heatable. In a further embodiment of the invention, the radiation source is inside the microstructured

Intermediate carrier arranged.

In a further embodiment of the invention, the radiation source is designed as an infrared source. In a further embodiment of the invention, the radiation source is designed as a light source.

In a further embodiment of the invention, the light source is designed as halogen lamps.

In another embodiment of the invention, the light source is a flash tube, e.g. Xenon flash tube

executed. As a result, it is advantageously possible to apply high amounts of energy to the intermediate carrier in a short time

and thus reduce the minimum structure width and reduce the heat load of the substrate. In a further embodiment of the invention, the radiation source is designed as a microwave source.

In a further embodiment of the invention, the material to be transferred is an organic material,

For example, an organic material from the class of small molecules ("small molecules").

In a further embodiment of the invention, the material to be transferred is an inorganic material,

for example, a metal. This is especially advantageous for the production of components with organic

Layers, where by the deposition of the metal one

Contact layer on one already on the substrate

deposited organic material can be produced.

In a further embodiment of the invention, in order to produce an RGB display, in a first step, a green-emitting organic material is deposited by the method described above. To complete the RGB display, the same procedure is analogous to that for the colors red and blue emitting organic

Materials repeated. The order of the colors is arbitrary.

In a further embodiment of the invention it comes during the deposition of the material to touch the

Substrate by directly placing the intermediate carrier in the area of the elevations of the microstructuring on the

Subcarrier. This is particularly advantageous if due to the microstructure elevations and trenches are formed on the intermediate carrier, which are formed on contact by placing the substrate on the intermediate carrier due to the surveys completed evaporation chambers. By forming respective evaporation spaces, a complete coating of the substrate over the area of the substrate and the intermediate carrier is achieved

ensures formed evaporation space. Furthermore, a transfer of material from locations of

Intermediate carrier avoided with the substrate in the region of the applied intermediate carrier, at which no evaporation of the Material takes place.

In a further embodiment of the invention, the substrate has no contact with the material on the intermediate carrier during the deposition, which is vaporized during the exposure.

In a further embodiment of the invention, during the deposition, the substrate has neither contact with the material on the intermediate carrier, which occurs during the deposition

Exposure is evaporated, which is not evaporated during the exposure.

In one embodiment of the above-described embodiment, the quartz glass of the intermediate carrier with a

pretreated to wet chemical etching to create a structuring of trenches and protrusions on the quartz glass. The following are the radiation-absorbing and

Radiation-reflecting layers applied.

As a result, structuring of the surface of the subcarrier results, which allows complete separation of the radiation absorbing layers in the trenches from the radiation absorbing or reflecting areas in the bump. When the substrate is placed on the intermediate carrier, there are isolated evaporation spaces, which form the region of the region formed as a trench

Intermediate carrier and the substrate are formed. The

Radiation absorbing layer, which within this

Evaporating space is deposited on the quartz glass is heated by means of an energy input, whereby the material deposited on the radiation-absorbing material is evaporated and deposited on the substrate. The formation of the isolated evaporation space results in advantages with regard to the exact local transfer of the material and with regard to a complete Transmission. In addition, a direct contact of the hot, radiation-absorbing layer is avoided with the substrate, so that, for example, at high temperatures evaporating materials such as copper on substrates with low maximum operating temperatures such as plastic films can be applied.

In an advantageous embodiment of the embodiment described above, in a first step, a

Radiation-reflecting layer disposed on the intermediate carrier. Subsequently, a microstructuring of the intermediate carrier takes place, wherein trenches are produced on the intermediate carrier by an etching step. Subsequently, a coating of the intermediate carrier with a

Radiation absorbing layer. This results in a difference in the layer structure between the trenches and the elevations, since in the trenches only one

Radiation-absorbing layer is arranged, while in the surveys, the radiation-absorbing layer is disposed on a radiation-reflecting layer. This results in an energy input by means of radiation from the back of the intermediate carrier, such as through a

Flash or halogen lamp, only the

Radiation absorbing layer is heated in the trenches, whereby evaporation of the material to be transferred takes place exclusively in these areas. In the

Surveys, however, there is no warming, as in these

Areas of energy input through the

Radiation-reflecting layer is prevented. It is particularly advantageous if a sufficient

Spacing between the trenches and the elevations

is present, otherwise due to the heat input

starting from the radiation-absorbing areas, heating of the intermediate carrier by heat conduction for example, could be done in the surveys.

As a result, there may be a partial evaporation of the material to be transferred from areas of the surveys. As a result, the microstructured transmission of the material, in particular a sharp edge formation is not possible to the desired extent, which is why only large

Microstructures can be transferred. Therefore, it is advantageous if the spacing between trenches and

Elevations is sufficiently high to provide a thermal

To enable decoupling of the two areas. The spacing is an increased thermal resistance

given why the temperature difference between the

Ditches and elevations can be increased.

In a further development of the embodiment described above, as a result of the spacing, an inverted arrangement of the radiation-absorbing and radiation-reflecting layer is also conceivable, since a sharp edge formation is made possible in every case by the thermal decoupling.

In a further embodiment of the invention, the substrate has a contact during the deposition

Placing the substrate to the material on the intermediate carrier. The intermediate carrier has a microstructure, which consists of radiation-absorbing and

Radiation-reflecting areas is formed. In this case, in a first step, the radiation-absorbing regions are arranged on the intermediate carrier in accordance with a microstructuring, whereby a

Microstructuring with trenches and surveys yields. In a second step, a radiation-reflecting layer is applied to this microstructure. This results in surveys, which a

having radiation-absorbing component. On this Layer arrangement is now deposited the material to be transferred. This is heated by means of an energy input in the region of the elevations and evaporated and deposited on the substrate. Due to the inverted arrangement of the radiation-reflecting layer over the

Radiation absorbing layer is an energy input only in the areas of the subcarrier allows, which have a radiation absorbing area.

In a further development of the embodiment described above, the intermediate carrier is in contact with the substrate by placing the substrate on the intermediate carrier, wherein the contact takes place in the region of the elevations and thus in the regions which are radiation-absorbing

Layer included. These areas are using

Heat energy input, whereby the material deposited on the intermediate carrier is heated and evaporated and is transferred to the substrate in the support zones. In the event that films are used as a substrate, this embodiment opens up a possibility of transferring the material from the intermediate carrier to the substrate in the form of a hot stamping.

In a further embodiment of the invention, the substrate is permanently moved during the deposition of the material. This is especially for use in

Continuous coating systems the case. The substrate may be, for example, as a planar substrate or tape

be executed.

In a further embodiment, the substrate is permanently moved and flexible. This is the case with metal or plastic tapes, for example, which are coated in the form of an endless roll. The thickness of the coating on the substrate can be over the Transport speed of the substrate to be influenced.

In a further embodiment of the invention, the intermediate carrier is moved permanently. This is the case in particular when using a cylindrical intermediate carrier. In this case, the deposition of the material according to the microstructuring can be influenced by the transport speed of the intermediate carrier. In one embodiment of this embodiment can thereby by adjusting the

Transport speed of substrate and subcarrier the shape of the microstructuring to be adjusted according to need.

In a further embodiment of the invention, a local change of the deposited layer thickness of the material to be transferred takes place on the substrate. This is done by a scattering of the particles of the material to be transferred during the transfer from the intermediate carrier to the substrate, which leads to a local change in the layer thickness of the material deposited on the substrate. In this case, the microstructure to be transmitted is displayed on the intermediate carrier in the form of substructures, wherein these

Substructures have radiation absorbing areas. The substructures cover at least part of the area of the microstructure to be transferred.

Subsequently, the deposition of the material to be transferred takes place on the intermediate carrier. At the following

Energy input by means of the radiation source is a scattering of the vapor particles of the evaporated material, wherein the intensity of the scattering is dependent on the distance between the microstructured intermediate carrier and the substrate and the ambient pressure. By using different

Sizes of the substructures or a variation of the number of substructures can be any layer thicknesses of produce transferring material on a substrate, wherein at most the deposited on the intermediate carrier layer thickness can be transferred to the substrate.

The scattering of the particles during the transfer of the

Material occurs as a function of the variation of the distance between subcarrier and substrate during the transfer of the material and / or the ambient pressure.

Corresponding substructures according to the invention can be used in a large number of technical applications, for example in the production of local color filters in the form of the transferable

Microstructuring or be used by Fresnel lenses, etc.

In a further embodiment of the invention, a further material is deposited on a first material to be transferred, which has a different evaporation temperature from the first material. This allows various materials to be deposited in combination on the substrate. For example, a deposition of an organic material and an inorganic material, such as a metal is conceivable here. It is essential, above all, that the first material is one of the second material

having different evaporation temperature.

Advantageously, the two diverge

Evaporation temperatures more than 100 K from each other. As a result, a targeted deposition of the material over the

Control of the energy input possible.

In a further embodiment of the invention, the first material is timed from the second material by a selective energy input corresponding to

Evaporating temperature of the first material evaporates. By controlling the amount of energy entered the Evaporation of the first material to be influenced. About the control of the entered amount of energy in

In relation to the flash time, the shape of the

Influence the structuring of the deposited materials. In a further embodiment of the invention

first a first material with a high

Evaporation temperature and then a second material with a low evaporation temperature on the

microstructured intermediate carrier deposited. Thereafter, with a first energetically low energy input, for example in the form of a xenon flash, the second material from

Subcarrier deposited on the substrate. Subsequently, the distance between substrate and intermediate carrier is changed. This is followed by a second, energetically higher one

Energy input for evaporation of the first material from the intermediate carrier, so that the first material, the second

Material on the substrate not only covers, but

due to, by varying the distance of the

Subcarrier of the substrate occurring scattering of

Steam particles covered. This corresponds to a so-called encapsulation of the second material with the first material.

In an embodiment of the above-described

Embodiment, the second material of on the

Subcarriers arranged arranged substructures on the substrate, wherein the distance between the intermediate carrier and the substrate is as small as possible in order to scatter the

To prevent vapor particles of the evaporated material or to keep low. This results in a transfer of

Substructures on the substrate. Subsequently, an increase of the distance between subcarrier and

Substrate. This is followed by another input of energy, for example in the form of a xenon flash. During the second Energy input, in which the first material is evaporated, causes the increased distance between the substrate and intermediate carrier a scattering of the vapor particles of the

vaporized material among themselves. The scattering of the vapor particles results in a coating of the entire microstructure formed by the substructures. In the event that the evaporation in a fine vacuum or under

Normal pressure conditions, the scatter is also dependent on the amount of residual gas, as this contributes directly to the scattering. Alternatively, first the first material can be deposited at a greater distance, whereby a scattering of the evaporated particles and thus a deposition of the through the substructures

formed microstructuring takes place. Subsequently, there is a reduction in the distance between the intermediate carrier and the substrate and the transfer of the second material. As a result, the deposition of the second material takes place in the form of the substructures on the substrate, as a result of which microstructured layer systems can be formed on the substrate. Further advantages and features of the invention are shown in the following ^¬ the detailed description of exemplary embodiments and the accompanying drawings. Showing:

Fig.l is a schematic representation of a

2 according to the invention a schematic representation of the targeted

Evaporation of organic materials and their deposition on a substrate,

A schematic representation of a

according to the invention evaporation of the remaining organic material, in

A schematic representation of a Continuous coating plant with evaporation devices according to the invention, in

5 shows a schematic cross-sectional view of an embodiment according to the invention with a

cylindrical intermediate carrier, in

6 shows a schematic representation of a

Vaporizing device according to the invention, wherein the

Subcarrier has a contact with the substrate and in

7 is a schematic representation of a

Evaporation device according to the invention, wherein the microstructure to be transferred is constructed from substructures.

Embodiments In a first embodiment, in Fig.l the micro ^¬ structured intermediate support 1 made of a quartz glass substrate 2 having areas with light reflecting 3 (eg lOOnm thick Al or Ag) or light-absorbing 4 (eg lOOnm thick CrN, or W WO _x or Cr) , made thin layers, so that a mask is created. In addition, one is

Protective layer 5 (eg, 50nm thick Si0 ₂ ) applied to prevent chemical reactions of the organic material 6 (see Fig. 2) with the applied film 4. Subsequently, the protective layer 5 of the microstructured

Subcarrier 1 with an organic material 6, e.g.

40nm green emitting dye Alq ₃ , coated in a vacuum chamber 13.

Subsequently, the with the organic material. 6

coated surface of the microstructured intermediate carrier 1 relative to a substrate 7, eg a TFT Monitor, in the proximity distance (typical for optical Litho ^¬ graphy, for example 30μη) or direct contact ^¬ places. Subsequently, the organic material 6 through the quartz glass 2 by means of a radiation source 8, for example a halogen lamp, in another segment of the

Vacuum chamber 13 exposed. This only heat up

Regions with the light-absorbing layer 4 sufficiently strong, so that the organic material 6 is evaporated only at these points and is reflected on the areas of the surface of the substrate 7, which are opposite to these locations (Figure 2). Due to the low heat capacity of the absorbent layer, the heating may be at sub-second evaporation temperatures

respectively. After switching off the radiation source through the shutter 9 is a rapid cooling of

absorbing layer by the thermal connection to the intermediate carrier, which has a relatively high heat capacity.

Similar to the optical lithography, the light source 8 can be switched on and off via a shutter 9. The smaller the distance between microstructured

Surface of the subcarrier 1 and the substrate 7, the lower the scattering vapor components, i. the amount of organic material 6 which condenses at unintended sites. Alternatively to the shutter, the

Light source analogous to a scanner relative to the

microstructured subcarrier (mask) 1 are moved.

Since the material yield is only about 30% per organic material 6 for a tricolor screen, in a further step in Figure 3, the organic material 6 of the coated surface of the microstructured subcarrier 1, so not by a light entry through The quartz glass 2 are evaporated so that it comes to heating the entire surface. For this purpose, can be used a Heizein ^¬ device 10, such as a heat radiator. After evaporation of the remaining 70 ~ 6 in one

Coating chamber, the heater 10 is turned off, so that again steam can be reflected uniformly on the upper ^¬ surface of the microstructured subcarrier 1.

In a modification of the above

Embodiment consists of the microstructured

Subcarrier 1 of a quartz glass substrate 2 with areas with light-reflecting 3 (eg lOOnm thick Ag) or light-absorbing 4 (eg lOOnm thick SiC _x ), thin

Layers, creating a mask. Since SiC _{x is} chemically inert, a protective layer 5 can be dispensed with in this case, so that a coating of the light-absorbing layer 4 with the material 6 can take place.

In a further embodiment, the microstructured intermediate carrier 1 in FIG

Quartz glass substrate 2 having regions of light reflecting 3 (e.g., 100 nm thick Ag) or light absorbing 4 (e.g.

lOOnm thick CrN), thin layers made, so that a mask is formed. Subsequently, the microstructured intermediate carrier _{1 is} coated with an organic material 6, for example 40 nm green-emitting dye Alq ₃ .

Thereafter, the substrate 7 on the with the organic

Material 6 coated surface of the microstructured subcarrier 1 is applied, whereby a direct contact takes place in the areas of the elevations of the microstructuring on the intermediate carrier 1. This results in isolated evaporation chambers 29, which through the trenches of

Microstructuring of the intermediate carrier 1 and the substrate. 7 be formed. Due to the formation of these evaporation chambers 29, a complete local transfer of the organic material 6 from the intermediate carrier to the substrate 7 is provided. Another advantage is that the formation of evaporation chambers 29, a coating under

High vacuum conditions are not required, since scattering of the particles of the vaporized material with the residual gas lead to no structure broadening.

Subsequently, the organic material 6 through the

Quartz glass 2 by means of a radiation source 8, e.g. a xenon flash tube, indirectly heated. In this case, only areas with the light-absorbing layer 4 heat up sufficiently, so that the organic material 6

is vaporized exclusively at these points and is reflected on the areas of the surface of the substrate 7, which are opposite to these locations. Because the areas heated on the mask do not have direct contact with the substrate, the heat input to the substrate is very small. This makes it possible to coat even temperature-sensitive substrates.

In one embodiment of the above

Embodiment is in a first step a

Radiation-reflecting layer 3 disposed on the intermediate carrier 2. Subsequently, a microstructuring of the intermediate carrier 2 takes place, wherein trenches are produced on the intermediate carrier 2 by an etching step. Subsequently, a coating of the intermediate carrier 2 with a

Radiation absorbing layer 4. This results in a difference in the layer structure between the trenches and the elevations, since only one in the trenches

Radiation absorbing layer 4 is arranged, while in the surveys, the radiation-absorbing layer 4 on a radiation-reflecting layer 3 is arranged. This results in the case of an energy input by means of radiation from the back of the intermediate carrier 2, such as a flash or halogen lamp, only the

Radiation absorbing layer 4 is heated in the trenches, whereby evaporation of the transferred

Materials 6 is done exclusively in these areas. In the surveys, however, there is no warming, since in these areas the energy input through the

Radiation-reflecting layer 3 is prevented. It is particularly advantageous if a sufficient

Spacing between the trenches and the elevations

is present, otherwise due to the heat input

starting from the radiation-absorbing regions 4, a heating of the intermediate carrier 2, for example, in the

Surveys could be made by heat conduction. As a result, there may be a partial evaporation of the material to be transferred 6 of areas of the surveys. As a result, the microstructured transmission of the material 6 in particular a sharp edge formation is not possible to the desired extent, which is why only large microstructures can be transmitted. Therefore, it is advantageous if the spacing between trenches and elevations is sufficiently high to enable thermal decoupling of the two areas. The spacing provides increased thermal resistance, therefore the temperature difference between the trenches and peaks can be increased.

In an alternative embodiment is due to the

Spacing also an inverted arrangement of the

Radiation-absorbing 4 and radiation-reflecting layer 3 conceivable because in each case by the thermal decoupling sharp edge formation is made possible. In an alternative of the above

Embodiment is on the intermediate carrier one

Microstructuring provided by the

light-absorbing layer 4 (eg 100 nm thick SiC _x ) is formed. The light-absorbing layer 4 forms the elevations on the quartz glass 2. This is followed by a coating with a light-reflecting layer 3 (for example, 100 nm thick Ag), which deposits in the trenches and on the light-absorbing layer 4 forming the elevation. This is followed by a direct

Touching the intermediate carrier 1 by placing the substrate 7. By the taking place at least in the support region of substrate 7 and intermediate carrier 1 energy input through the

Radiation source 8, for example, a xenon flash tube, there is a heating exclusively of

light-absorbing layer 4 and therefore excluding the surveys. Only in this area heats and evaporates the material 6 and can be deposited on the contacting substrate 7. In the event that the substrate 7 is designed as a film, thus results in a hot stamping effect in the transfer of the material. 6

In a further embodiment this is too

transferring material is an inorganic material,

For example, a metal such as Al, Ag, Cu, etc. In a further embodiment is as

Radiation source 8 uses a xenon flash tube. This is particularly suitable to provide a large amount of energy of about 80 MW / m ² in a short time. The exposure time is about 1ms, so that the heat conduction of

absorbing to reflective areas is reduced to a minimum and consequently very small

Structure widths can be produced In a further exemplary embodiment, a second material 19, for example a metal such as aluminum, is to be deposited on the substrate on the first material 6 to be deposited, for example an organic material. For this purpose, a first energy input by the

Radiation source 8, approximately in the form of a xenon flash, whereby the first material 6 is heated on the intermediate carrier 1 and evaporated. This then deposits on the substrate 7. Subsequently, a second

Energy input, which heats and evaporates the second material 19. It is advantageous if the first and the second material 6,19 differ in their evaporation temperature. This allows selective evaporation by controlling the amount of energy entered. In a further embodiment, a temporal variation of the registered amount of energy takes place. Thereby, the amount of the evaporated material 6,19 can be controlled accordingly, whereby the layer thickness of the material deposited on the substrate 7 6,19 can be influenced. In a further embodiment, in FIG

Layer thickness of the deposited on the substrate 7 layer of the material 6,19 locally changed. This is going through

Substructures 31 are achieved, which are arranged regularly within the desired structure 30. By way of example, the material 6, 19 to be transferred is deposited on the substrate 7 in the form of a square having an edge length of 100 μm and a layer thickness of 50 nm. The other structures on the substrate 7, however, have a layer thickness of 100 nm. For this purpose, many small microstructured surfaces with a light-absorbing layer 4 are applied to the intermediate carrier 1 within the square, but only 50% of the area of the microstructure to be transferred in the form of the Take square. Subsequently, a lOOnm thick

Layer of the material to be transferred 6,19 on the

Intermediate carrier 1 deposited. Subsequently, the energy input by the radiation source 8, which takes place

for example, designed as a xenon flash tube. As a result of the scattering of the particles in the exposure process, the material on the substructures 31 of the mask produces a square on the substrate 7 which has a layer thickness of only 50 nm. The strength of the scattering of the vapor particles of the evaporated material 6,19 can be determined by the distance between the intermediate carrier 1 and the substrate 7 and the

Affect ambient pressure. By the number of

Substructures or their total area can be any layer thickness of the deposited on the substrate 7

Produce material 6,19. The maximum producible

Layer thickness corresponds to the deposited on the intermediate carrier 1 layer of the transferred material 6,19.

In a further embodiment, first a first material 6 with a high evaporation temperature, for example a metal such as Ag and then a second material 19 with a low

Evaporation temperature, for example, an organic

Material deposited on the microstructured intermediate carrier 1. Thereafter, the energy is introduced by the radiation source 8, which is designed as a xenon flash. In this case, the second material 19 is deposited on the substrate 7 from the intermediate carrier 1 with a first, low-energy flash. The surfaces of mask and substrate

touch each other during the first flash. Subsequently, the distance between substrate 7 and intermediate carrier 1 is increased by, for example, 50 μm, as used in optical lithography. This is followed by a second, energetically high flash to vaporize the on the Subcarrier 1 remaining first material 6, so that the first material 6, the second material 19 on the substrate 7 not only covers, but due to the distance to

Subcarrier 1 covered by scattering of the vapor particles of the vaporized first material 6. This corresponds to an encapsulation of the second material 19 with the first material 6.

In an embodiment of the previously described

Embodiment, the first material 6, which is deposited on a microstructure in the form of substructures on the intermediate carrier 1, deposited on the substrate 7 by means of energy input through the radiation source 8, which is designed as a xenon flash tube. The

Deposition of the first material 6 takes place in this case in a relatively low Decency of substrate 7 and intermediate carrier 1, so that no or only a small scattering of

evaporated particles of the first material 6, whereby the deposited on the substrate 7 material 6 is visible in the form of the transferred substructures. Subsequently, the distance between the substrate 7 and the intermediate material 1 coated with the second material 19 is increased.

During the second radiation input by the xenon flash 8, in which the second material 19 is vaporized, causes the relatively large distance between substrate 7 and

Subcarrier 1 a scattering of the vaporized particles of the vaporized second material 19 with each other and possibly with the residual gas, so that a coating of the entire

Area of the formed by the substructures

Microstructuring with the material 19 on the substrate 7 takes place. This results in an encapsulation of the first

Material 6 through the second material 19th In a further exemplary embodiment, FIG. 4 shows a modification of the evaporation device according to the invention in a continuous coating installation. Here, the microstructured intermediate carrier 1 are designed as a quartz drum. The microstructuring is advantageously applied to the surface of the quartz drum on the basis of the exemplary embodiment 1. The

Continuous coating plant 11 for coating a

Substrate 7, e.g. a film, which is guided as an endless roll through the system 11, in a first vacuum chamber 13 with an organic material 6, which has a

red-emitting dye, coated. For this purpose, the organic material 6 in a

Evaporating device 12 is heated and evaporated.

As a result, the organic material 6 deposits on the microstructured intermediate carrier 1. The area between the evaporator 12 and the substrate is separated by a shield 14, so that no unwanted entry of organic material 6 from the steam space 17 on the

Substrate 7 takes place. The evaporator 12 facing side of the shield 14 is maintained at evaporation temperature to prevent condensation of the organic material 6 on the shield 14.

As a result of a continuous rotational movement 15 of the intermediate carrier 1, the deposited organic material 6 is moved in the direction of the substrate 7 until it has reached a position opposite to the substrate 7. At this point, the organic material 6 is heated and vaporized by the light source 8, which is focused in the direction of the substrate, onto the surface of the intermediate carrier and which is arranged in the interior of the intermediate carrier 1. Analogously to the first embodiment, the heating and evaporation takes place only in the areas of the intermediate carrier 1, the have no light-reflecting layer 3. As a result, the substrate 7 is vapor-deposited with the organic material 6 as a function of the microstructuring.

As a result of the continuous rotational movement 15 of the intermediate carrier 1, a movement of the remaining on the intermediate carrier 1 in the light-reflecting regions 3 takes place

organic material 6 in the direction of the shield 14th

In this case, the intermediate carrier 1 passes through a first region in the vapor space 17, in which the surface is heated to such an extent by light beam focused on a line that the remaining organic material evaporates. The line of the light beam is arranged parallel to the axis of rotation. Subsequently, the intermediate carrier 1 cools in the vapor space so far that again organic material condenses on its surface. The radiation source for generating the line could be located in the interior of the intermediate carrier analogous to the radiation source 8 and be focused on the area in which intermediate carrier 1 and shielding 14 meet in the vapor space 17 on the right side. Also the

Radiation source 8 should be on the surface of the

Intermediate carrier 1 be focused, but in the direction of the normal of the substrate.

The substrate 7 is now due to its continuous movement 16 to the next coating device

transported. There, analogously to the first coating of a further coating with a green-emitting organic material 6. Finally, in a final coating step, a coating with a blue-emitting organic material 6. As a result, in a continuous coating system 11, a complete RGB coating can be performed.

In a further embodiment, in Fig. 5 is a cylindrical intermediate carrier 1 for coating the

band-shaped substrate 7, which continuously in the direction of rotation 25 about the axis of rotation 26th

is transported. The cylindrical intermediate carrier 1 may consist, for example, of a quartz drum which has a coating with an absorber layer

CrN / Si0 ₂ , wherein the Si0 ₂ layer is to avoid a possible oxidation of the CrN layer. Alternatively, an absorber layer of SiC can be used. Of the

Outer diameter of the quartz drum is present

Embodiment 300 mm. The wall thickness of the quartz drum is 10 mm. The cylindrical intermediate carrier 1 rotates at a constant speed about the axis of rotation 26 and in the direction of rotation 25th

The coating of the intermediate carrier 1 with a first material 6 takes place by means of a steam pipe 23 of the first evaporation device in a first position. The

Steam pipe 23 may consist, for example, of SiC and have a line source with a rectangular box top. After coating the intermediate carrier 1 with a first material 6 in the first position, due to the continuous movement of the intermediate carrier 1, a rotation of the area coated with the first material 6 of the surface of the intermediate carrier 1 to a second vapor tube 24 of a second evaporation device in a second position. There is analogously a coating with a second material 19. It should be noted here that the

Evaporation temperature of the second material 19 must be smaller than that of the first material 6 in the first position. Otherwise, the hotter steam pipe 24 of the second

Material 19 with higher evaporation temperature the

Intermediate carrier 1 heat so strong that the material 6 with low evaporation temperature, which is already under Steam pipe 23 was deposited, would be undesirably evaporated in the second position. In order to minimize the thermal influence on the first and second steam pipes 23 and 24, shielding plates 22 are provided which support the

Reduce radiant heat. As a result, an independent control of both steam pipes 23, 24 and the resulting deposition rates is made possible.

Due to the continuous rotational movement 25 of the

Subcarrier 1 becomes the one with the first and second

Material 6, 19 coated area of the surface of the

Subcarrier 1 in a third position moves to a radiation source 8. This is arranged on the coated surface of the intermediate carrier 1 opposite side inside the quartz drum. The coated surface of the intermediate carrier 1 has contact in this position

Substrate and is continuously in

Substrate transport direction 16 moves past the intermediate carrier 1 over.

For the deposition of material 6, 19 on the substrate 7, these are heated by means of the radiation source 8 and evaporated. As a result, the material 6, 19 are deposited on the substrate 7. Advantageously, the

Subcarrier 1 in the region of the radiation source 8 cooled by a cooling device 28 to a continuous

To minimize temperature increase thereof. Both the

Cooling device 28, as well as the radiation source 8 may be located outside the vacuum chamber. The radiation source 8 can be embodied for example as a halogen flashlight or as a xenon flash tube.

In order to cool the absorber layer on the surface of the quartz drum 1, further water-cooled surfaces 14 are provided, which comprise a part of the intermediate carrier 1. The water-cooled surfaces 14 may be designed as metal components, which are flowed through by cooling water. By the water-cooled surfaces 14 was an indirect

Cooling of the quartz drum 1 by receiving the

Heat radiation.

Furthermore, for example, another indirect

Cooling possibility of quartz drum 1 consist of a cooling device 28, which, for example, a stationary

Cooling water pipe is made, which is arranged in the interior of the quartz drum 1 and having a radiation-absorbing outer wall. To maximize the yields of the deposited materials 6, 19, heated steam shutters 27 may also be provided in the first and second positions in the region of the steam tube 23, 24 of the first and second evaporation devices. The distance between quartz drum 1 and aperture 27 is about 1/10 of the half aperture length in the direction of movement of the quartz drum 1. At a distance of 2 mm between

Quartz drum 2 and aperture 27 is thus the aperture length of the heated vapor barrier 27 about 40 mm. The drive of the intermediate carrier 1 via

Drive rollers 20, each in the edge region of the

Intermediate carrier 1 are arranged. Thereby, a contact of the drive rollers 20 is avoided with the coated portion of the surface of the intermediate carrier 1 to a

Prevent impairment of the quality of the coating. The drive rollers 20 may for example be made of a rubber, since the temperature of the intermediate carrier 1 at this point is well below 100 ° C. The amount of deposited material 6,19 results from an interaction of the

Substrate transport speed and the amount of

vaporized material 6,19, which is deposited on the intermediate carrier 1 via the steam pipes 23,24. The

Layer thickness of the deposited on the substrate 7 material 6,19 can thus be adjusted accordingly via the aforementioned parameters.

In one embodiment of the above

Embodiment is a direct contact of the substrate 7 and the cylindrical intermediate carrier 1 at least in

Area of the radiation source 8 given. In the case of a flexible substrate 7, in the form of a tape or a

Foil, is a further contact of the

Subcarrier 1 by the substrate 7 beyond the area of the radiation source 8 also out as shown in Fig. 5 possible.

Method and device for local deposition of material on a substrate

LIST OF REFERENCE NUMBERS

1 microstructured intermediate carrier

2 intermediate carriers

3 light-reflecting layer

4 light absorbing layer

5 protective layer

6 first material

7 substrate

8 radiation source

9 shutter

10 heating device

11 continuous coating plant

12 evaporators

13 vacuum chamber

14 Shielding or cooling

15 Direction of rotation of the intermediate carrier

16 Substrate transport direction

17 steam room

18 heater of the shield

19 second material

20 drive or bearing rollers

21 more radiation source

22 shielding plates

23 steam pipe of the first evaporation device

24 steam pipe of the 2nd evaporation device

25 rotation direction of the cylindrical intermediate carrier

26 axis of rotation of the cylindrical intermediate carrier

27 heated steam apertures

28 cooling device

29 evaporation chamber

30 microstructuring formed from substructures œubstruktur

Claims

Method and device for local deposition of a material on a substrate Patent claims

1. Method for local deposition of a material

(6,19) on a substrate (7), where a local

Transfer of material (6,19) from one

Intermediate carrier (2), characterized in that the material (6,19) is transmitted from the intermediate carrier (2) to the substrate (7) microstructured.

2. The method according to claim 1, characterized in that a local deposition of the material (6,19) from the intermediate carrier (1) by means of energy input by a radiation takes place, wherein the intermediate carrier (1) a

Microstructuring has, of which the material (6,19) from the intermediate carrier (1) on the substrate (7) is transmitted microstructured.

3. The method according to any one of claims 1 and 2, characterized in that the local deposition of the

Material (6,19) from the intermediate carrier (1) by means of

Energy is introduced by a radiation, wherein the material (6,19) on the intermediate carrier (1) locally heated and evaporated and then on the

Substrate (7) is microstructured deposited.

4. The method according to any one of claims 1 to 3 comprising the preparation of a microstructured

Intermediate carrier (1) by means of a first

Deposition of a microstructured

Radiation-reflecting layer (3) on a transparent intermediate carrier (2), a second Deposition of a radiation-absorbing layer (4) on the radiation-reflecting layer (3) and the uncoated microstructured surface of the intermediate carrier (2), and deposition of the material (6,19) over the radiation-absorbing layer (4) and a local evaporation of the material to be transferred (6,19), whereby a directed

Deposition of the materials (6,19) corresponding to the microstructuring on the substrate (7).

5. The method according to any one of claims 1 to 3 comprising the preparation of a microstructured

Intermediate carrier (1) by means of a first

Deposition of a microstructured

Radiation-reflecting layer (3) on a transparent intermediate carrier (2), and a second deposition of a

Radiation absorbing material (6,19) over the microstructured radiation reflecting layer (3) and a local evaporation of the

Radiation absorbing material (6,19), whereby a directed deposition of the materials (6,19) according to the microstructuring on the substrate (7).

6. The method according to any one of claims 1 to 3 comprising the preparation of a microstructured

Intermediate carrier (1) by means of a first

Deposition of a microstructured Radiation absorbing layer (4) on a transparent intermediate carrier (2), as well as a second deposition of a material (6,19) over the microstructured

Radiation absorbing layer (4) and a local evaporation of the material (6,19) from the radiation absorbing layer (4), whereby a directed deposition of the materials (6,19) according to the microstructuring on the substrate (7).

7. The method according to any one of claims 1 to 3 comprising the preparation of an intermediate carrier (1) by means of a first deposition of a

Radiation absorbing layer (4) on a transparent intermediate support (2), as well as a second deposition of a material (6,19) over the radiation absorbing layer (4) and a local evaporation of the material (6,19) from the radiation absorbing layer (4) a microstructured energy input through the radiation source (8), whereby a directed deposition of the materials (6,19) corresponding to the microstructuring on the substrate (7).

8. The method according to any one of claims 1 to 7, characterized in that a transparent protective layer (5) before the deposition of the material (6,19) on the intermediate carrier (1) is applied.

9. The method according to any one of claims 1 to 8, characterized in that after the deposition of the Material (6,19) on the substrate (7), the remaining material (6,19) on the intermediate carrier (1) by means of a heater (10) is heated and evaporated and again deposited on the intermediate carrier (1), wherein the Material (6,19) is deposited as a homogeneous layer.

10. The method according to any one of the preceding claims, characterized in that the radiation input of the radiation source (8) by a shutter (9) is regulated.

11. The method according to any one of the preceding claims, characterized in that the microstructuring of the intermediate carrier (1) by a structured

Deposition of the radiation-reflecting layer (3) is generated.

12. The method according to any one of claims 9 to 11, characterized in that the microstructuring of

Radiation-reflecting layer (3) by optical lithography.

13. The method according to any one of the preceding claims, characterized in that the substrate (7) during the deposition of the material (6,19) on the

microstructured intermediate carrier (1) at least in the region of the transfer of the material (6,19) from

Intermediate carrier (1) on the substrate (7) directly

rests.

14. The method according to claim 13, characterized in that a transfer of the material (6,19) from

microstructured intermediate carrier (1) takes place in the region of the overlying substrate.

15. The method according to claim 13, characterized in that the substrate (7) during the deposition of the material (6,19) on the microstructured

Intermediate support (1) at least in the area of

Transfer of the material (6,19) from the intermediate carrier

(1) directly on the substrate (7) rests, wherein by substrate (7) and microstructured intermediate carrier (1) evaporation chambers (29) are formed and a transfer of the material (6,19) in the

Evaporation spaces (29) takes place.

16. The method according to any one of the preceding claims, characterized in that the substrate (7) during the deposition of the material (6,19) on the substrate (7) is moved permanently.

17. The method according to any one of the preceding claims, characterized in that on a first material to be transferred (6), a further material (19) is deposited, which has a different from the first material (6) evaporation temperature.

18. The method according to claim 17, characterized in that a selective deposition of the materials (6, 19) on the substrate (7) via the registered

Energy amount and the associated heating and evaporation of the materials (6,19) takes place, the regulation of the energy input on the

Radiation power takes place.

19. The method according to any one of the preceding claims, characterized in that a local change in the deposited layer thickness of the material to be transferred (6,19) on the substrate (7) takes place in that a scattering of the particles to be transferred Material (6,19) during the transmission of

Intermediate carrier (1) on the substrate (7).

20. The method according to claim 17, characterized in that the scattering of the particles during the transfer of the material (6,19) by varying the distance between the intermediate carrier (1) and substrate (7) during the transfer of the material (6,19) and /or in

Dependence on the ambient pressure takes place.

21. Device for microstructured, local

Deposition of a material (6) on a substrate (7) comprising a layer system consisting of a transparent intermediate carrier (2), a

microstructured, radiation reflecting (3) and a radiation absorbing layer (4) on which the material to be transferred (6) is deposited, and a radiation source (8) on the

deposited material (6) opposite side of the intermediate carrier (1) is arranged.

22. The device according to claim 21, characterized in that on the radiation-absorbing layer (4) a protective layer (5) is arranged, on which the material to be transferred (6) is deposited.

23. The device according to claim 21, characterized in that the radiation-absorbing layer (4) on the microstructured, radiation-reflecting layer

(3) is arranged.

24. The device according to claim 21, characterized in that the radiation-reflecting layer (3) on the microstructured, radiation-absorbing layer

(4) is arranged.

25. Device according to one of claims 21 to 24,

characterized in that a heating device (10) is arranged on the side of the intermediate carrier (1) coated with the material (6).

26. Device according to one of claims 21 to 25,

characterized in that the microstructured intermediate carrier (1) has a cooling device.

27. Device according to one of claims 21 to 26,

characterized in that the microstructured intermediate carrier (1) is designed as a cylinder.

28. The device according to claim 27, characterized in that the microstructured intermediate carrier (1) is designed as a cylinder, which is permanently moved.

29. Device according to one of claims 27 and 28,

characterized in that the cylinder

arranged microstructured intermediate carrier in a vacuum chamber (13) of a continuous coating plant is arranged, wherein the vacuum chamber (13) has an evaporator (12) for heating and evaporation of the

Material (6) and further comprises a shield (14) is provided, the substrate (7) from

Evaporator (12) separated, wherein the shield (14) comprises the microstructured intermediate carrier (1).

30. The device according to claim 29, characterized in that the shield (14) is heatable.

31. Device according to claims 27 to 30, characterized

characterized in that the radiation source (8) in

Inside the microstructured intermediate carrier (1) is arranged.

32. Device according to claims 21 to 31, characterized in that radiation source (8) is designed as a flash tube.

33. Apparatus according to claim 32, characterized in that the radiation source (8), which is designed as a flash tube, is a xenon flash tube.

34. Device according to claims 21 to 33, characterized

in that the microstructure (30) is formed on the microstructured intermediate carrier (1)

Substructures (31) is constructed, which at least a part of the surface to be transmitted

Cover the microstructure (30) on the intermediate carrier (1).