KR102178401B1 - Patterning method of thin film for organic light emission diode and organic thin film using thereof - Google Patents

Abstract

The present invention relates to a method for forming a thin film pattern for an organic light emitting diode which can form a pattern even on a multi-layered organic thin film at a high speed, comprising: a first step of forming an organic material layer by vapor deposition on a transparent electrode; a second step of contacting a polymer stamp patterned on the organic material layer; a third step of heating the organic material layer through the transparent electrode; a fourth step in which a part of the heated organic material layer is absorbed into the polymer stamp; and a fifth step of removing the polymer stamp on the organic material layer.

Description

[Patterning method of thin film for organic light emission diode and organic thin film using thereof]

The present invention relates to a thin film pattern forming method for an organic light-emitting diode capable of forming a pattern on a multilayer organic thin film at a high speed, and an organic thin film prepared therefrom.

A flat panel display device is a display device including a liquid crystal display device, a plasma display device, and an organic light emitting device. Among them, organic light-emitting devices are expected to gradually expand their applications in that they have fast response speed, low power consumption, and can display with high brightness without a separate backlight.

In general, an organic light-emitting device sequentially forms an anode film, an organic thin film, and a cathode film on a substrate, and applies a voltage between the anode and the cathode to cause the organic light-emitting device to emit light by itself. Specifically, energy remaining as the injected electrons and holes recombine is generated as light, and various colors can be implemented by controlling the wavelength of light.

Such an organic light-emitting device is formed by sequentially stacking an anode, a hole injector, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode, and the anode is usually a transparent electrode. At this time, the hole transport layer and the light emitting layer must have a pattern, and various studies are being conducted to form a fine pattern on a thin film.

As one of the methods for forming a pattern on a thin film, there is a method by photolithography. However, in the case of forming a fine pattern with a short wavelength of light, the process price increases rapidly, and holes are exposed to various organic solvents during the patterning process. Since the organic material layer such as the transport layer and the light emitting layer are easily damaged, there is a problem that it is difficult to apply when manufacturing an organic light emitting device.

In order to compensate for the above-described photolithography process problem, a Fine Metal Mask (FMM) has been devised to perform patterning along with deposition in a manufacturing process of an organic light emitting device. In the FMM, in the process of forming an organic thin film, a mask is attached to deposit an organic material only in a required area, but there is a problem in that it is difficult to implement a fine pattern because a shadow effect occurs.

Korean Patent Application Publication No. 10-2007-0103509

An object of the present invention is to provide a method for forming a thin film pattern for an organic light emitting diode capable of forming a pattern at a high speed.

Another object of the present invention is to provide a method for forming a thin film pattern for an organic light-emitting diode capable of forming a pattern on all of the multi-layers by single patterning with respect to a multi-layered organic thin film.

Another object of the present invention is to provide a method for forming a thin film pattern for an organic light emitting diode capable of forming a fine pattern.

Another object of the present invention is to provide a method for forming a thin film pattern for an organic light emitting diode, which is inexpensive in a process price and capable of forming a fine pattern by a simple method.

The method for forming a thin film pattern for an organic light-emitting diode according to the present invention comprises: a first step of forming an organic material layer by vapor deposition on a transparent electrode;

A second step of contacting the polymer stamp patterned on the organic material layer;

A third step of heating the organic material layer through the transparent electrode;

A fourth step in which a part of the heated organic material layer is absorbed by the polymer stamp; And

And a fifth step of removing the polymer stamp on the organic material layer.

In the method for forming a thin film pattern for an organic light emitting diode according to an embodiment of the present invention, the heating temperature in the third step may be a temperature lower than the glass transition temperature of the organic material layer.

In the method for forming a thin film pattern for an organic light emitting diode according to an embodiment of the present invention, the polymer stamp may include polydimethylsiloxane.

In the method for forming a thin film pattern for an organic light emitting diode according to an embodiment of the present invention, the second and third steps may be performed while pressing the polymer stamp on the organic material layer at a pressure of 1 to 10 kPa.

In the method for forming a thin film pattern for an organic light emitting diode according to an embodiment of the present invention, the organic material layer may be in a state in which different organic material layers are stacked.

In the method for forming a thin film pattern for an organic light emitting diode according to an embodiment of the present invention, the thickness of the organic material layer may be 10 to 500 nm.

In the method of forming a thin film pattern for an organic light-emitting diode according to an embodiment of the present invention, the organic material layer is copper phthalocyanine (CuPc), N, N-di(naphthalen-1-yl)-N, N'-diphenyl- Benzidine (N, N'-di(naphthalene-1-yl)-N, N'-diphenylbenzidine: NPB) and one selected from tris-8-hydroxyquinoline aluminum (Alq3) or It can contain more than one.

In the method for forming a thin film pattern for an organic light emitting diode according to an embodiment of the present invention, the third step may be performed at 35 to 95°C.

In the method for forming a thin film pattern for an organic light emitting diode according to an embodiment of the present invention, when the temperature in the third step is 50° C., the polymer stamp absorbs the organic material layer at 0.1 to 1 nm per minute to form a pattern, and the When the temperature of the second step is 90° C., the polymer stamp may absorb the organic material layer at 2 to 8 nm per minute.

The present invention also provides an organic thin film, characterized in that the organic thin film according to the present invention is manufactured through the process of forming a thin film pattern for an organic light emitting diode according to an embodiment of the present invention.

In the method of forming a thin film pattern for an organic light emitting diode according to the present invention, a pattern for an organic light emitting diode is formed at a high speed by heating an organic material layer and contacting a polymer stamp, and a part of the organic material layer is absorbed by the polymer stamp. This is possible, and even in the case of an organic material formed in multiple layers, it is possible to form a fine pattern at once, and there is an advantage of forming a pattern on a thin film by a simple method.

1 schematically illustrates a method of forming a thin film pattern for an organic light emitting diode according to an embodiment of the present invention.
2 is a diagram illustrating a change in thickness of an organic material layer over time in the process of forming a thin film pattern for an organic light emitting diode according to an embodiment of the present invention.
3 is a diagram illustrating a change in thickness of an organic material layer according to temperature in the method of forming a thin film pattern for an organic light emitting diode according to an embodiment of the present invention.
FIG. 4 is a diagram illustrating a process of forming a thin film pattern for an organic light-emitting diode according to the type of the organic material layer generated by time periods.
5 is a diagram illustrating a change in thickness of an organic material layer according to temperature in a method of forming a thin film pattern for an organic light emitting diode according to an embodiment of the present invention.
6 is a diagram illustrating and measuring a pattern formation speed according to a composition of a polymer stamp in a method of forming a thin film pattern for an organic light emitting diode according to an embodiment of the present invention.
7 is a diagram illustrating and observing a pattern formed when an organic material layer is formed in multiple layers in the method of forming a thin film pattern for an organic light emitting diode according to an embodiment of the present invention.
FIG. 8 shows and confirms that a pattern is formed even when a curved substrate is used in the method for forming a thin film pattern for an organic light emitting diode according to an embodiment of the present invention.

Advantages and features of the embodiments of the present invention, and a method of achieving them will become apparent with reference to the embodiments described later in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in a variety of different forms, and only these embodiments make the disclosure of the present invention complete, and are common knowledge in the technical field to which the present invention pertains. It is provided to completely inform the scope of the invention to those who have, and the invention is only defined by the scope of the claims. The same reference numerals refer to the same components throughout the specification.

In describing embodiments of the present invention, if it is determined that a detailed description of a known function or configuration may unnecessarily obscure the subject matter of the present invention, a detailed description thereof will be omitted. In addition, terms to be described later are terms defined in consideration of functions in an embodiment of the present invention and may vary according to the intention or custom of users or operators. Therefore, the definition should be made based on the contents throughout this specification.

The method for forming a thin film pattern for an organic light-emitting diode according to the present invention comprises: a first step of forming an organic material layer by vapor deposition on a transparent electrode;

A second step of contacting the polymer stamp patterned on the organic material layer;

A third step of heating the organic material layer through the transparent electrode;

A fourth step in which a part of the heated organic material layer is absorbed by the polymer stamp; And

And a fifth step of removing the polymer stamp on the organic material layer.

The method for forming a thin film pattern for an organic light emitting diode according to the present invention includes the first to fifth steps described above, so that the pattern formation process can be performed at a high speed, and even in the case of an organic material layer formed of multiple layers, the pattern can be formed at once. There is this. In addition, by using a polymer stamp, there is an advantage in that it is possible to form a uniform pattern even on a curved substrate because it is free to bend. Furthermore, there is an advantage in that it is possible to form a fine-sized pattern by blocking the shadow effect that may occur in the conventional FMM.

In the method for forming a thin film pattern for an organic light emitting diode according to an embodiment of the present invention, the heating temperature of the third step may be performed at a temperature lower than the glass transition temperature of the organic material layer, and further, the fourth step may also be heated while performing heating. Can proceed. When the heating temperature is higher than the glass transition temperature, a problem in which the fluidized multilayer thin films are mixed with each other may occur, and thus a pattern can be formed through a process of contacting the polymer stamp at a temperature lower than the glass transition temperature. Specifically, the polymer stamp may be a pattern formed, and when the protruding portion of the pattern contacts the organic material layer, the polymer stamp absorbs a part of the organic material layer at the portion in contact with the organic material layer, so that the organic material remains and is not clear. It is possible to prevent the problem of forming uneven patterns.

A method of forming a thin film pattern for an organic light emitting diode according to an embodiment of the present invention includes forming an organic material layer on a transparent electrode by deposition. The method of forming an organic material layer on the transparent electrode can be applied without limitation in the case of a method of forming an organic material layer through evaporation. As a specific and non-limiting example, the organic material layer may be deposited by physical vapor deposition, chemical vapor deposition, atomic layer deposition, or the like, but the present invention is not limited thereto.

In addition, the organic material layer may be used without limitation if it includes an organic material included in the organic material layer used in the organic light emitting device. Specifically, the organic material layer may be used without limitation if it is an organic material included in the hole transport layer, the light emitting layer, and the electron transport layer. As described above, the method of forming a thin film pattern for an organic light emitting diode according to an embodiment of the present invention includes a hole transport layer, After forming one or two or more layers selected from the light emitting layer and the electron transport layer, the pattern can be formed at a time, which is more economical and has the advantage of enabling the production of a patterned thin film within a short time. More specifically, the organic material layer is copper phthalocyanine (CuPc: copper phthalocyanine), N, N-di(naphthalen-1-yl)-N, N'-diphenyl-benzidine (N, N'-di(naphthalene-1- One or two or more selected from yl)-N, N'-diphenylbenzidine: NPB) and tris-8-hydroxyquinoline aluminum (Alq3), but this is only an example for an organic material layer, In the case of organic materials included in the organic light emitting diode, it can be used without limitation.

In the method for forming a thin film pattern for an organic light-emitting diode according to an embodiment of the present invention, the heating temperature in the third step may be 35 to 95°C, specifically 40 to 93°C. In the above-described temperature range, while preventing the problem that the organic material layers formed in multiple layers are mixed with each other, the polymer stamp has the advantage of enabling rapid pattern formation by absorbing the organic material at a high speed.

Specifically, when the temperature in the third step is 50 °C, the polymer stamp absorbs the organic material layer at a rate of 0.1 to 1 nm per minute, specifically, 0.3 to 1 nm per minute, to form a pattern, and When the temperature is 90° C., the polymer stamp has an advantage of being able to absorb the organic material layer at a rate of 2 to 8 nm per minute, specifically 2 to 6 nm per minute. That is, the method of forming a thin film pattern for an organic light-emitting diode according to an embodiment of the present invention has an advantage in that a pattern can be formed at a high rate through the above-described organic material absorption rate per minute, and a clean pattern can be formed because there is no remaining organic material layer. Furthermore, the higher the performing temperature of the third step is, the faster the diffusion rate is, so that the pattern can be formed at a high speed.

On the other hand, the method of forming a thin film pattern for an organic light emitting diode according to another embodiment of the present invention may be performed at a high temperature of 100° C. or higher, specifically in the range of 100 to 200° C., and in this case, the glass transition temperature or melting of the conventional organic material layer Although there is a limit in that a pattern can be formed only on a single-layered thin film in a range beyond the temperature, there is an advantage that the formation speed of the pattern is remarkably fast. For example, in the case of forming a pattern with the temperature of the third step at 170° C., the polymer stamp absorbs an organic layer of 50 nm or more per minute, specifically 50 to 100 nm per minute, so that the pattern is formed at a remarkably high speed. Can be formed.

In the method for forming a thin film pattern for an organic light emitting diode according to an embodiment of the present invention, the thickness of the organic material layer may be 10 to 500 nm, specifically 50 to 400 nm, and when the organic material layer is formed by stacking multiple layers, the thickness of each organic material layer May be 10 to 200 nm, specifically 30 to 150 nm, and when the organic material layer is included in the above-described thickness range, an organic material layer formed of multiple layers can be formed in a clear and clean pattern. However, it goes without saying that the thickness of the organic material layer may vary depending on the use of the organic light-emitting diode to be manufactured and the type of organic material included in the organic material layer.

In addition, the transparent electrode on which the organic material layer is formed may be used without limitation in the case of a transparent electrode generally used in a method of forming a thin film pattern for an organic light emitting diode. As a specific and non-limiting example, the transparent electrode may include one or two or more selected from ITO, IZO, and IZTO, and preferably an ITO thin film may be used, but the present invention is not limited thereto.

In the method for forming a thin film pattern for an organic light emitting diode according to an embodiment of the present invention, in the second and third steps, the polymer stamp is applied to the organic material layer at a pressure of 1 to 10 kPa, specifically 1.5 to 7 kPa. It can be carried out, and through such pressurization, moisture absorption of the organic material layer is promoted, and a clear pattern can be formed without residue. Further, when the pressure is higher than the above-described range during pressurization, a problem may occur that affects the organic material layer remaining in addition to the organic material layer to be absorbed.If the pressure is lower than the above-described range, the absorption rate of the organic material layer is significantly slowed. Problems can arise.

In addition, in the method for forming a thin film pattern for an organic light emitting diode according to an embodiment of the present invention, the total time for the polymer stamp to contact the organic material layer may vary depending on the heating temperature and the thickness of the organic material layer, but specifically 20 to 150 minutes, more Specifically, it may be 30 to 140 minutes. When the polymer stamp contacts for a shorter time than the above range, it is difficult to form a clear pattern.When the polymer stamp contacts the organic material layer for a period longer than the above range, the pattern is absorbed by the organic material layer on the part other than the contact surface of the polymer stamp. This rather blurring problem can occur.

In the method of forming a thin film pattern for an organic light-emitting diode according to an embodiment of the present invention, the polymer stamp may include polydimethylsiloxane (PDMS), and the organic material layer is absorbed by using a polymer stamp including polydimethylsiloxane. It is possible to form a clear pattern. The method for forming a thin film pattern for an organic light-emitting diode according to an embodiment of the present invention uses polydimethylsiloxane as a polymer stamp, thereby promoting absorption of the organic material layer and enabling rapid pattern formation. Furthermore, when using polydimethylsiloxane, there is an advantage that a fine pattern having a thickness of 1 to 10 μm can also be clearly formed. At this time, polydimethylsiloxane can be prepared by mixing a polydimethylsiloxane precursor and a curing agent, which is a commonly known method, and curing using a mold in which a pre-pattern of the pattern to be formed is formed Manufacturing is possible.

Preferably, the mixing ratio of the polydimethylsiloxane precursor: the curing agent may be 10: 0.5 to 7, specifically 10: 0.7 to 6, more specifically 10: 1.5 to 5.5. It is possible to prevent the problem of physical properties of the polymer stamp that may occur due to the partial curing of polydimethylsiloxane within the above range, and by preventing the problem of lowering the absorption rate due to excessive mixing of the curing agent, it is possible to form a pattern at a high speed. There is this. Furthermore, it can be seen that the rate of absorbing the pattern increases as the ratio of the curing agent increases, within the range that satisfies the mixing ratio of the polydimethylsiloxane precursor and the curing agent described above, and this means that the curing agent affects the polymer stamp made of polydimethylsiloxane. It seems to be the result of given.

The polydimethylsiloxane precursor according to an embodiment of the present invention is liquid at room temperature (25° C.) and can be applied without limitation if it is a polydimethylsiloxane curable through a curing agent. In addition, the curing agent may be used without limitation if it is a material used for curing polydimethylsiloxane, but curing may be preferably performed using dimethyl methylhydrogen siloxane.

The present invention also provides a patterned organic thin film, and the organic thin film according to the present invention may be a pattern formed by the method of forming a thin film pattern for an organic light emitting diode according to an embodiment of the present invention. As described above, when the method for forming a thin film pattern for an organic light emitting diode according to an embodiment of the present invention is used, it is possible to manufacture without an organic material layer remaining in an ultra-fine pattern of 3 μm level, and thus high quality without problems such as shadow effect. There is an advantage of providing an organic thin film in which a pattern of is formed.

Hereinafter, the present invention will be described in detail by examples and comparative examples. The following examples are only intended to aid understanding of the present invention, and the scope of the present invention is not limited by the following examples.

[Production Example 1]

Polydimethylsiloxane precursor (Sylgard 184, Dow Corning), which was degassed for 30 minutes in a vacuum, and a curing agent (Dimethyl methylhydrogen siloxane) were mixed in a weight ratio of 10: 2 and injected into a mold having a linear pre-pattern having a thickness of 5 μm. A polymer stamp was prepared.

[Production Example 2]

It was prepared in the same manner as in Preparation Example 1, but a polymer stamp was prepared by mixing a polydimethylsiloxane precursor: a curing agent in a weight ratio of 10:4.5.

[Production Example 3]

It was prepared in the same manner as in Preparation Example 1, but a polymer stamp was manufactured using a mold having a linear pre-pattern having a thickness of 10 µm.

[Production Example 4]

It was prepared in the same manner as in Preparation Example 1, but a polymer stamp was manufactured using a mold in which a linear pre-pattern having a thickness of 7.5 μm was formed.

[Comparative Production Example 1]

It was prepared in the same manner as in Preparation Example 1, but a polymer stamp was prepared by mixing a polydimethylsiloxane precursor: a curing agent in a weight ratio of 10:1.

An organic thin film was formed in the same manner as in the following example by using the polymer stamp prepared in the above Preparation Example.

[Example 1]

An ITO thin film is formed on the substrate, and an Alq3 (tris-8-hydroxyquinoline aluminum) layer is deposited to a thickness of 100 nm through physical vapor deposition on the ITO thin film to form an organic material layer. The substrate with the ITO thin film on which the organic material layer is formed is in contact with the heat source and heated to 50°C. The polymer stamp prepared in Preparation Example 1 was brought into contact with the organic material layer, and while pressing at a pressure of 3 kPa, the thickness of the organic material layer was measured for each time period.

[Example 2]

It was prepared in the same manner as in Example 1, but a pattern was formed by setting the heating temperature to 90°C, and the thickness of the organic material layer was measured for each time period.

[Example 3]

Prepared in the same manner as in Example 1, but instead of Alq3, NPB (N, N'-di(naphthalene-1-yl)-N, N'-diphenylbenzidine) was deposited to the same thickness, and the thickness of the organic material layer was reduced while forming a pattern. It was measured by time zone.

[Example 4]

It was prepared in the same manner as in Example 3, but the thickness of the organic material layer was measured by time by setting the heating temperature to 90°C.

[Example 5]

It was prepared in the same manner as in Example 2, but a polymer stamp was prepared using the polymer stamp prepared in Preparation Example 2.

[Example 6]

A 50 nm NPB layer was formed on the ITO thin film using chemical vapor deposition, and a 50 nm Alq3 layer was formed on the formed NPB layer to prepare a multilayer organic material layer, followed by the same method as in Example 1. Preparation Example Each pattern was formed using the polymer stamps prepared in 1, Preparation Example 3 and Preparation Example 4, and the formed pattern is shown in FIG. 7.

[Example 7]

It was prepared in the same manner as in Example 1, but a three-layer Alq was formed in a cylindrical curved glass bottle, and after contacting the polymer stamp, the glass bottle was heated at 130° C. for 10 minutes to form a pattern.

[Comparative Example]

It was prepared in the same manner as in Example 2, but a polymer stamp was prepared using the polymer stamp prepared in Comparative Preparation Example 1.

Confirmation of pattern formation and pattern formation speed on the organic material layer

In the pattern formation process of Examples 1 to 4, the change in thickness of the organic material layer was observed, and this is shown in FIGS. 2 to 5.

First, it was confirmed whether the pattern was formed based on FIG. 2. Referring to the lower figure of FIG. 2, it can be seen that a pattern was formed in both Example 1 where patterning was performed at 50° C. and Example 2 where patterning was performed at 90° C. In addition, referring to the upper figure of FIG. 2, it can be seen that the thickness of the portion in contact with the polymer stamp decreases as time passes. However, in the case of Example 2, in which patterning was performed at 90°C, it can be seen that the thickness variation rather decreases in 70 minutes after the longest time elapses, which absorbs all the contacted portions of the polymer stamp and the remaining organic material layer. Seems to be one result.

FIG. 3 specifically shows the patterning speed according to the patterning temperature. Referring to FIG. 3, when patterning is performed at 50° C. as in Example 1, the polymer stamp absorbs 0.69 nm per minute of the organic material layer, and Likewise, when patterning is performed at 90° C., it can be seen that the organic material layer is absorbed by 2.84 nm per minute.

4 is a diagram illustrating and confirming whether a pattern is formed when NPB is used as an organic material layer. First, referring to the lower figure of FIG. 4, it can be seen that the pattern was formed in the case of Example 4 in which only the organic material layer was changed to NPB under the same conditions as in the case of using Alq3 of Example 1, and the upper figure of FIG. For reference, it can be seen that the thickness gradually decreases in the part where the pattern contacts with time.

FIG. 5 specifically shows the patterning speed according to the patterning temperature in the case of using NPB as the organic material layer. Referring to FIG. 3, when patterning is performed at 50° C. as in Example 3, a polymer stamp is applied to the organic material layer by 0.78 per minute. It absorbs nm, and it can be seen that when patterning is performed at 90° C. as in Example 4, the organic material layer is absorbed by 3.76 nm per minute.

Check the absorption rate according to the composition of the polymer stamp

In Example 2, Example 5, and Comparative Example 1 having different ratios of the curing agent, the thickness of the organic material layer was measured after 20 minutes elapsed after contacting the polymer stamp, and this is shown in FIG.

Referring to FIG. 6, it can be seen that Comparative Example 1 in which the weight ratio of the polydimethylsiloxane precursor: the curing agent is 10:1 shows the lowest absorption rate, and the highest absorption rate is in the range of 10:2, When the weight ratio is 10: 4.5, it can be confirmed that the ratio of the curing agent contained in the polymer stamp has an effect on the pattern formation rate by confirming that the absorption rate is rather low.

Check whether a clear pattern is formed even in the case of multi-layered organic matter

The pattern formed in Example 6 was observed and shown in FIG. 7. Referring to FIG. 7, it can be seen that even when an organic material layer is formed by stacking two different layers of organic material, a clear pattern can be formed regardless of the thickness of the pattern.

Check whether patterns can be formed even on curved substrates

The pattern generated in Example 7 was observed and the results are shown in FIG. 8. Referring to FIG. 8, it can be seen that a clear and uniform pattern is formed even when a curved substrate is used.

Claims (10)

A first step of forming an organic material layer on the transparent electrode by vapor deposition;
A second step of contacting the polymer stamp patterned on the organic material layer;
A third step of heating the organic material layer through the transparent electrode;
A fourth step in which a part of the heated organic material layer is absorbed by the polymer stamp; And
A fifth step of removing the polymer stamp on the organic material layer,
The polymer stamp includes polydimethylsiloxane, and polydimethylsiloxane is mixed in a weight ratio of polydimethylsiloxane precursor: hardener 10: 1.5 to 5.5,
When the temperature of the third step is 50 °C, the polymer stamp absorbs the organic material layer at 0.1 to 1 nm per minute to form a pattern, and when the temperature of the third step is 90 °C, the polymer stamp is 2 to 1 per minute. A method of forming a thin film pattern for an organic light-emitting diode, characterized in that the organic material layer is absorbed by 8 nm. The method of claim 1,
The heating temperature in the third step is a method of forming a thin film pattern for an organic light-emitting diode at a temperature lower than the glass transition temperature of the organic material layer. The method of claim 1,
The polymer stamp is a method for forming a thin film pattern for an organic light emitting diode comprising polydimethylsiloxane. The method of claim 1,
The second and third steps are performed while pressing the polymer stamp on the organic material layer at a pressure of 1 to 10 kPa. A method of forming a thin film pattern for an organic light emitting diode. The method of claim 1,
The organic material layer is a method of forming a thin film pattern for an organic light emitting diode in a state in which different organic material layers are stacked. The method of claim 1,
The method of forming a thin film pattern for an organic light emitting diode having a thickness of the organic material layer of 10 to 500 nm. The method of claim 1,
The organic material layer is copper phthalocyanine (CuPc), N, N-di(naphthalen-1-yl)-N, N'-diphenyl-benzidine (N, N'-di(naphthalene-1-yl)-N , N'-diphenylbenzidine: NPB) and tris-8-hydroxyquinoline aluminum (tris-8-hydroxyquinoline aluminum) (Alq3) thin film pattern forming method comprising one or two or more selected from. The method of claim 1,
The third step is a method of forming a thin film pattern for an organic light emitting diode performed at 35 to 95 °C. delete An organic thin film prepared by the method of forming a thin film pattern according to any one of claims 1 to 8.

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