KR101412181B1 - Method and device for locally depositing a material on a substrate - Google Patents

Abstract

The present invention relates to a method and apparatus for locally depositing an organic material (6) on a substrate (7) using an intermediate carrier, wherein the local deposition of the organic material (6) As shown in Fig. The intermediate carrier has a microstructure and is transported from the intermediate carrier to the substrate 7 in a state where the organic material 6 is microstructured by the microstructure.

Description

METHOD AND DEVICE FOR LOCALLY DEPOSITING A MATERIAL ON A SUBSTRATE BACKGROUND OF THE INVENTION [0001]

The present invention relates to a method for locally depositing a material on a substrate using a microstructured intermediate carrier (mask), wherein the material is vacuum deposited in a microstructured state.

The invention also relates to an apparatus for locally depositing material on a substrate in a microstructured state.

Deposition of the material in a microstructured state on a substrate is still considered an undue challenge today. Such deposition is particularly applied for high throughput during manufacturing to reduce cost. Therefore, a variety of lithography methods have been developed with the minimum desired structural width for maximum throughput. For example, laser ablation is used for minimum structural widths of up to 10 μm when the throughput is 1E-4 m ² / s to 1E-3 m ² / s. Offset printing is applied for a minimum structural width of 10 to 50 μm when the throughput is 1E + 1 m ² / s to 1E + 2 m ² / s.

For organic materials, a variety of patterning methods within the scope of OLED-fabrication are also known. Due to excellent image reproduction and simple technical structure, the use of organic light emitting diodes (OLEDs) for screens is regarded as a technology following LCD or plasma screens. For example, an LCD typically consists of a single white light source, a layer of liquid crystal that is used as a light switch, and a color filter connected behind it. In contrast, OLEDs emit themselves in certain colors, and do not require external light sources and color filters.

By using a flexible carrier material (flexible substrate, thin film), the OLED opens up the possibility of making a curled-up screen and thereby making it possible to carry a larger screen.

OLEDs can be easily inserted into small, portable devices such as notebooks, cell phones and MP3 players by a small thickness of a few hundred nanometers.

One additional advantage of OLED-screens compared to LCDs is the switching speed, which is several times faster, which enables real-world playback of high-speed video sequences, especially for 3D-images. OLED-screens and OLED-TV-devices are far superior to current LCD- and plasma-devices in terms of transportation costs due to their relatively smaller volume and significantly lower weight.

In the case of using the so-called " Small Molecules "(an organic material having a molecular mass of about 100-1000 mu) as an organic material in an OLED, since the material is very sensitive to oxygen and water, It should be noted that the methods used can not be used for patterning, in particular for optical lithography.

In order to mass produce small displays with SMOLED (Small Molecule Organic Light Emitting Diodes), a shadow mask is used as an alternative method for optical lithography. Examples include wireless phones, MP3 players, or palmtops. Disadvantages in this manner include high manufacturing costs, high management costs, and scaling (different thermal expansion coefficients of the substrate and mask, deflection of a very thin mask, etc.) that have not yet been technically addressed for large displays or general substrates, to be. The main reason for scaling difficulties on large substrates is that mass production of computer-monitors or television receivers has not yet occurred.

Organic Vapor Jet Printing (OVJP) (M Shtein et al., J. Appl. Phys. 96, 4500 (1996)), in which one or more small vapor nozzles are moved in vacuum, 2004) is also known.

Additional methods such as Laser Induced Thermal Imaging (LITI) have not been proven to be suitable for mass production to date due to the technical difficulties associated with these methods and due to the high cost caused by low throughput.

In particular, laser ablation is a grid pattern approach similar to ink jet writers, which can reach much lower throughputs than most other similar printing methods, such as optical lithography.

US 2007/0151659 A1 discloses a printing method and a method for making a grid on a substrate by subsequent LITI-processing.

US 2009/0038550 A1 describes a method of producing a small sized heating source by local evaporation of a large surface organic layer. The method consists of a mask configured as a passive-matrix-display. The fabrication of the mask is very complex due to the electrical supply lines required for the heating source. In particular, reliability at high temperatures can be assessed as critical because relatively high energy is required for evaporation and diffusion processes can change the properties of the insulator or electrical resistance, This is because the thin film is separated. Materials such as the polyamides described above can only be used for relatively low evaporation temperatures.

In addition, similar methods based on lasers for depositing organic materials in a microstructured state in the manufacture of OLEDs are also known.

Thus, in addition to the LITI method, the laser can be fabricated using the RIST-method (Non-Contact OLED Color Patterning by Radiation Induced Sublimation Transfer (RIST), M. Boroson, Eastman Kodak Co., Rochester, NY, USA, SID International Symposium 2005) and LILT-method (M. Kroeger, Device and Process Technology for Full-Color Active-matrix OLED Displays, pages 71-102, Cuvillier-Publishers, November 19, 2007) It is also used in the category.

Also within the scope of Dye-Diffusion-Patterning, lasers are used (Patterned dye diffusion using transferred photoresist for polymer OLED displays, Proceedings Vol. 4105, Organic Light-Emitting Materials and Devices IV, pages 59- 68, Three-color organic light-emitting diodes patterned by masked dye diffusion, Applied Physics Letters, 74 (13), pages 1913-1915).

It is therefore very important to develop cost-effective lithography methods that can be used for OLED-, Organic Solar Cell (OSC) and Organic TFT (Thin Film Transistor) basically based on "Small Molecules" It is important. Other methods to be developed must have high throughputs in order to be used in mass production. In this case too, it would be highly desirable if not only the organic material but also the inorganic material can be deposited in a microstructured state on the substrate by the method to be developed.

It is an object of the present invention to provide a method and apparatus for overcoming the disadvantages of known manufacturing methods.

The problem associated with the method is solved by the method according to claim 1. Preferred embodiments are described in the dependent claims.

A further problem associated with the device is solved by an apparatus according to claim 17. Preferred embodiments are described in the dependent claims.

In accordance with the present invention, a local deposition of material on a substrate is made, wherein the local transfer of material is done by an intermediate carrier. Wherein the material is transferred from the intermediate carrier to the substrate in a microstructured state.

In one embodiment of the present invention, the local deposition of material is accomplished using an intermediate carrier. In this case, the intermediate carrier (mask) has a fine structure. The material to be transferred on the microstructure is deposited over the entire surface. Subsequently, a portion of the material is transferred from the intermediate carrier to the substrate by energy input by radiation. Wherein the material transferred from the intermediate carrier to the substrate is transferred corresponding to the microstructure present on the intermediate carrier. The term "transfer" in the sense of the present invention means that the material is transferred from the intermediate carrier to the substrate where the type of transfer, such as evaporation and deposition, contact stamping, It does not matter as long as it is transferred to the substrate correspondingly.

In one embodiment of the present invention, the local deposition of the material is accomplished by radiation energy input by a microstructured intermediate carrier, where the material is heated on an intermediate carrier, evaporated and then microstructured on the substrate Lt; / RTI > Wherein the microstructure on the intermediate carrier is formed in the form of areas that reflect and absorb radiation, in which case evaporation of the material is locally limited within the absorption regions of the intermediate carrier. This process is achieved by the introduction of energy in the form of radiation.

In one embodiment of the present invention, localized evaporation is effected by radiation energy input from the side of the intermediate carrier facing the material to be transported by the microstructured intermediate carrier, where the microstructure reflects the radiation And is formed from the absorbing regions, and the evaporation takes place in a locally limited state within the absorption regions of the intermediate carrier. Wherein the microstructures formed by the reflective and absorption regions can be disposed on the side of the intermediate carrier facing the substrate as well as on the opposite side away from the substrate. In any case, the energy inflow by the radiation is prevented in the reflection areas of the microstructured surface, thereby preventing the local evaporation of the material deposited on the intermediate carrier. Local evaporation takes place only in the absorption regions of the microstructure. As a result, the material to be transferred is deposited on the substrate in an inverted form, so that a negative stamping effect is obtained.

In a further embodiment of the present invention, first a microstructured intermediate carrier is produced. In this embodiment, a layer that reflects the microstructured radiation is deposited on the side of the intermediate carrier facing the substrate. Partial coating of the surface of the intermediate carrier results in a microstructure with trenches and ridges, wherein the ridges are formed by a layer that reflects the radiation. A second deposition of the radiation absorbing layer takes place on the radiation reflective layer and the uncoated microstructured surface, and the radiation absorbing layer is selectively additionally covered with a protective layer. After the micro-structured intermediate carrier is completed, the coating of the protective layer is made by the material to be deposited. Finally, a local deposition of the material to be transferred from the intermediate carrier to the substrate is effected by radiation energy input from the side facing the coated side of the intermediate carrier. The energy input causes local heating and evaporation of the material to be transported in regions that do not have a reflec- tive action of the microstructure. After evaporation of the substrate, the microstructured intermediate carrier undergoes further evaporation steps.

In one embodiment of the present invention, localized evaporation occurs at the side of the intermediate carrier facing the material by energy inflow of radiation by the microstructured intermediate carrier, in which case the microstructure is in the region of radiation reflection And the local evaporation of the radiation absorbing material is carried out by the micro-structured intermediate carrier, so that directive deposition of the organic material corresponding to the microstructure appears on the substrate.

In one embodiment of the present invention, the localized evaporation occurs at the side of the intermediate carrier facing the material to be transported by the energy inflow of radiation by the microstructured intermediate carrier, in which case the microstructure absorbs the radiation And the local evaporation of the material to be transported is made by the micro-structured intermediate carrier, so that directive deposition of organic material corresponding to the microstructure appears on the substrate.

In one embodiment of the present invention, localized evaporation is carried out by a microstructured energy input by the radiation by the intermediate carrier, that is to say by a laser beam or a xenon-flash-tube, In which case the local evaporation of the material to be transported is made by the intermediate carrier corresponding to the microstructured radiation so that on the substrate directional deposition of the material is exhibited corresponding to the microstructure . At this time, the material to be transferred was deposited on the radiation absorbing layer. Alternatively, the material may act to absorb radiation.

In one embodiment of the invention, the deposition of the protective layer takes place on an intermediate carrier before deposition of the material to be transported, i. E., Organic material. In this case, the protective layer is transparent and chemically inert with respect to the organic material to be deposited, so that possible reaction of the organic material with the layer that reflects the radiation or absorbs the radiation is inhibited on the intermediate carrier.

If the layer absorbing radiation or the layer reflecting radiation is chemically inert with respect to the material to be transported, the corresponding protective layer may be absent. Such content corresponds to, for example, a layer that absorbs radiation made of SiC or a layer made of CrN.

In one embodiment of the present invention, the material remaining on the substrate after deposition of the material to be transferred is heated and evaporated by a heating device disposed on the side of the surface coated with the material. The result is uniform vapor distribution over the microstructured intermediate carrier and ultimately uniform deposition of vaporized material. Whereby a new single layer of the material is realized on the entire surface of the microstructured intermediate carrier. This layer is then utilized for further coating of the substrate. So that the material used is entirely used for coating the substrate.

In a further embodiment of the present invention, the heating device disposed on the side of the surface coated with the material to be transported has been implemented as a radiator.

In one further embodiment of the present invention, the material remaining in the non-reflective areas of the intermediate carrier surface is heated and evaporated by heating of the intermediate carrier. After cooling of the intermediate carrier, the evaporated material is deposited as a uniform layer on the intermediate carrier.

In a further embodiment of the invention the radiation inflow of the radiation source is controlled by a shutter.

In one further embodiment of the present invention, the microstructure of the intermediate carrier is generated by structured deposition of a layer that reflects the radiation.

In one further embodiment of the present invention, the structured deposition of the layer reflecting radiation is accomplished by lithography.

In one further embodiment, the intermediate carrier is configured to be heatable.

In one further embodiment, the intermediate carrier is cooled by a cooling device.

In one further embodiment of the present invention, the microstructured intermediate carrier is embodied as a microstructured cylinder.

In a further embodiment of the invention, a micro-structured intermediate carrier, embodied as a cylinder, is arranged in the vacuum chamber of the continuous coating facility, wherein the vacuum chamber comprises an evaporator for heating and evaporating the material, Shielding is also provided for isolating the substrate from the evaporator, wherein the shield surrounds the microstructured intermediate carrier.

In one further embodiment of the present invention the shield is embodied as being heatable.

In a further embodiment of the present invention the source of radiation is arranged inside the microstructured intermediate carrier.

In one further embodiment of the present invention the source of radiation has been implemented as an infrared source.

In one further embodiment of the present invention the source of radiation has been implemented as a light source.

In one further embodiment of the invention the light source has been implemented as a halogen lamp.

In one further embodiment of the invention the light source has been embodied as a scintillation-tube, for example as a xenon-scintillation-tube. By such an implementation, a large amount of energy is preferably transferred to the intermediate carrier in a short time, thereby reducing the minimum structural width and reducing the heat load of the substrate.

In a further embodiment of the present invention the source of radiation is embodied as a microwave source.

In one further embodiment of the invention, the material to be transported is an organic material, for example an organic material selected from the group of "Small Molecules ".

In one further embodiment of the invention the material to be transported is an inorganic material, for example a metal. Such an embodiment is particularly preferred for producing an element having an organic layer, in which a contact layer can be generated by metal deposition on an organic material already deposited on the substrate.

In one further embodiment of the present invention an organic material that emits green in the first stage to produce an RGB-display is deposited according to the method described above. The same method is similarly repeated using an organic material emitting red and blue to complete the RGB-display. The order of the colors may be arbitrarily selected.

In a further embodiment of the invention, contact is made with the substrate by depositing the intermediate carrier directly on the intermediate carrier in the ridge region of the microstructure during deposition of the material. Such a situation is particularly preferable when a closed evaporation space is formed due to the raised portion when the substrate is raised on the intermediate carrier by the formation of ridges and trenches on the intermediate carrier due to the microstructure. Formation of a corresponding evaporation space ensures that the substrate is completely coated over the plane of the evaporation space formed by the substrate and the intermediate carrier. Further, in the place of the intermediate carrier in which the substrate is present in the region where the intermediate carrier is raised, the transfer of the material is avoided, and the evaporation of the material is not performed at all.

In one further embodiment of the invention, the substrate does not make any contact with the material on the intermediate carrier during deposition, i. E. In the case of exposure, with the material to be vaporized.

In one further embodiment of the present invention, the substrate contacts the material on the intermediate carrier during deposition, i. E., Evaporated in the case of exposure and not evaporated in the case of exposure.

In one refinement of the above-described embodiment, the quartz glass of the intermediate carrier is pretreated by wet chemical etching to form a structure of trenches and ridges on the quartz glass. Subsequently, there are provided layers which absorb radiation and reflect radiation. This results in the structuring of the intermediate carrier surface, which allows the radiation absorbing layers in the trench to be completely separated from the radiation absorbing regions or radiation reflecting regions in the ridge. When the substrate is placed on the intermediate carrier, an insulated evaporation space appears and the evaporation space is formed from the substrate and the region of the intermediate carrier formed as a trench. The radiation absorbing layer deposited on the quartz glass inside the evaporation space is heated by energy inflow, so that the material deposited on the radiation absorbing layer is vaporized and deposited on the substrate. By forming an insulated evaporation space, several advantages arise in terms of accurate local transfer of material and complete transfer. In addition, direct contact between the substrate and the hot layer that absorbs radiation is avoided, resulting in a material that evaporates at high temperatures, such as copper, on a substrate having a low maximum working temperature, such as a plastic-thin film .

In one preferred refinement of the above-described embodiment, in the first step a layer that reflects the radiation is placed on the intermediate carrier. Subsequently, microstructuring of the intermediate carrier is achieved, in which case a trench is formed on the intermediate carrier by an etching step. The intermediate carrier is then coated with a layer that absorbs radiation. This results in a difference in the layer structure between the trench and the ridge because only one radiation absorbing layer is disposed in the trench, while in the ridge the layer absorbing radiation absorbs the radiation- As shown in FIG. As a result, when energy is introduced by the radiation from the rear surface of the intermediate carrier, that is, by the flash lamp or the halogen lamp, only the radiation absorbing layer in the trench is heated. As a result, Only within this region. However, no heating occurs at all in the ridge, because the inflow of energy is prevented by the layer reflecting the radiation in this region. A particularly preferred case in this improvement case is when there is sufficient spacing between the trench and the ridge because heating of the intermediate carrier originating from the radiation-absorbing region due to heat transfer is carried out by thermal conduction For example in ridges. As a result, a situation may arise in which the material to be transferred from the ridge region can be partially evaporated. Thereby, the microstructured transfer of the material makes it impossible to form as sharp a sharp edge as desired, so that only the microstructure, which is large in size, can be transported. Therefore, in order to enable thermal separation of the two regions, it is preferable that the distance between the trench and the ridge is sufficiently large. Such an interval increases the thermal resistance, which may increase the temperature difference between the trench and the ridge.

It is also conceivable to arrange the radiation-absorbing layer and the radiation-reflecting layer in an inverted arrangement for such an interval in one preferred refinement of the above-described embodiment, This is because a sharp edge can be formed.

In a further embodiment of the present invention, the substrate is brought into contact with the material on the intermediate carrier by being raised during deposition. Wherein the intermediate carrier has a microstructure formed from a radiation-absorbing region and a radiation-reflecting region. In this embodiment, the region for absorbing the radiation in the first step is arranged on the intermediate carrier in correspondence with the microstructure, so that a microstructure having trenches and ridges appears. In a second step, a layer is provided that reflects radiation on the microstructure. Thereby creating a ridge with a component absorbing radiation. At this time, a material to be transferred on the layer structure is deposited. The material to be transferred is heated and evaporated in the raised region by energy input, and deposited on the substrate. The inversion arrangement state in which the layer for reflecting the radiation is arranged on the layer for absorbing the radiation enables energy inflow only in the region of the intermediate carrier having the region for absorbing the radiation.

In one improvement of the above-described embodiment, the contact of the substrate with the intermediate carrier is made by placing the substrate on an intermediate carrier, in which case the contact phenomenon occurs in the region of the ridge, . As the regions are heated by the energy input, the material deposited on the intermediate carrier is heated and evaporated and transferred onto the substrate in contact zones. When the thin films are used as the substrate, this improvement opens the possibility that the material can be transferred from the intermediate carrier to the substrate in the form of hot embossing.

In one further embodiment of the present invention, the substrate is continuously moved during material deposition. This is especially the case when used in continuous coating equipment. In this embodiment, the substrate may be implemented as, for example, a planar substrate or strip.

In one further embodiment, the substrate is formed to move continuously and flexibly. This is the case, for example, of metal-or plastic strips coated in the form of infinite rollers. In this embodiment, the thickness of the coating on the substrate may be influenced through the transport speed of the substrate.

In one further embodiment of the present invention, the intermediate carrier moves continuously. In this case, particularly, a cylindrical intermediate carrier is used. Deposition of the material corresponding to the microstructure in this embodiment can be influenced by the transport speed of the intermediate carrier. In one improvement of this embodiment, the shape of the microstructure can be adapted to the requirements by adapting the feed rate of the substrate and the intermediate carrier.

In a further embodiment of the invention, the thickness of the deposited layer of material to be transferred on the substrate is locally varied. This local thickness variation is made by dispersing the particles of the material to be transported during transport from the intermediate carrier to the substrate, which causes a local change in the layer thickness of the deposited material on the substrate. The microstructure to be transferred on the intermediate carrier in this embodiment is shown in the form of a sub structure, in which case the substructure has a region that absorbs the radiation. Wherein the substructure covers at least a portion of the facets of the microstructure to be transported. Subsequent deposition of the material to be transported on the intermediate carrier is then effected. In the case of a subsequent energy input by the radiation source, the dispersion of the vapor particles of the evaporated material occurs, in which case the intensity of the dispersion depends on the spacing between the micro-structured intermediate carrier and the substrate and on the ambient pressure. The layer thickness of the material to be transported on the substrate can be arbitrarily formed by using sub-structures of various sizes or by changing the number of sub-structures, in which case the layer thickness deposited on the intermediate carrier can be maximally applied to the substrate .

Dispersion of the particles carried out during the transfer of the material is effected by varying the spacing between the intermediate carrier and the substrate during material transfer and / or by the ambient pressure.

The corresponding sub-structures according to the invention can be used in many industrial applications, say in the form of microstructures to be transferred in the production of local color filters or in the form of fresnel-lenses and the like.

In a further embodiment of the present invention, an additional material is deposited on the first material to be transferred, which has a different evaporation temperature than the first material. Whereby a variety of materials can be deposited on the substrate in a combined form. For example, in this embodiment, deposition of an organic material and an inorganic material, that is, a metal, can be considered. Another important fact in this embodiment is that the first material has a different evaporation temperature than the second material. The two evaporation temperatures are preferably different by at least 100K. This allows the material to be deposited as intended through the control of the energy input.

In a further embodiment of the present invention, the first material is evaporated corresponding to the evaporation temperature of the first material by selective energy input at a time interval from the second material. By controlling the amount of energy introduced, evaporation of the first material can be effected as intended. By controlling the amount of energy introduced in proportion to the flash time, the structured form of the deposited material is also affected.

In one further embodiment of the present invention, a first material having a first high evaporation temperature is then deposited and then a second material having a low evaporation temperature is deposited on the microstructured intermediate carrier. And then a second material is deposited on the substrate from the intermediate carrier, in the form of a xenon-flash, by means of a first energy input which is energetically low. Subsequently, the interval between the substrate and the intermediate carrier is changed. Subsequently, a second energetic inflow of energy is provided by the intermediate carrier for the purpose of evaporating the first material, so that the first material not only covers the second material on the substrate, but also changes the gap between the substrate and the intermediate carrier And may overlap with the second material due to the dispersion of the vapor particles. This situation corresponds to the encapsulation of the so-called first material and the second material.

In one refinement of the above-described embodiment, the second material is deposited on the substrate by a sub-structure disposed on the intermediate carrier, wherein the spacing between the intermediate carrier and the substrate prevents dispersion of vapor particles of vaporized material, It is as small as possible to keep it low. Whereby the sub-structure is transferred onto the substrate. Thereafter, the gap between the intermediate carrier and the substrate is enlarged. Then, in turn, an additional energy input takes place in the form of xenon-flashes. During the second energy input, during which the first material evaporates, the enlarged spacing between the substrate and the intermediate carrier causes dispersion of vapor particles of vaporized material among each other. The dispersion of the vapor particles results in the coating of the entire microstructure formed by the sub-structure. When the evaporation takes place in a medium vacuum or under normal pressure conditions, the dispersion of the vapor particles also depends on the amount of the existing residual gas, since the existing residual gas directly contributes to the dispersion . Alternatively, the first material can first be deposited at relatively larger intervals, resulting in the dispersion of the evaporated particles and deposition of the microstructure formed by the sub-structure. Then, the gap between the intermediate carrier and the substrate is reduced, and the transfer of the second material is performed. Whereby the second material is deposited on the substrate in the form of a sub-structure, so that a microstructured layer system can be formed on the substrate.

Additional advantages and features of the present invention may be derived from the following detailed description of the embodiments and the accompanying drawings.

1 is a schematic view of an evaporator according to the present invention,
2 is a schematic diagram showing the intended evaporation of an organic material and the direct deposition of the material on a substrate,
Figure 3 is a schematic diagram showing the evaporation of the remaining organic material according to the invention,
Fig. 4 is a schematic view of a continuous coating facility with an evaporator according to the invention,
Figure 5 is a schematic cross-sectional view of one embodiment according to the present invention having a cylindrical intermediate carrier,
Figure 6 is a schematic view of an evaporator according to the invention, in which the intermediate carrier is brought into contact with the substrate,
Fig. 7 is a schematic diagram of an evaporator according to the invention, in which case the microstructure to be transferred is constructed from sub-structures.

In the first embodiment according to figure 1, the microstructured intermediate carrier 1 comprises a thin layer 3 (for example 100 nm thick Al or Ag) for reflecting light or a thin layer 4 (for example 100 nm thick CrN, or W-WO _x or Cr), resulting in a mask. A protective layer 5 (for example SiO ₂ of 50 nm thickness) was additionally provided to prevent the chemical reaction of the organic material 6 (see FIG. 2) and the provided thin film 4. Subsequently, the protective layer 5 of the microstructured intermediate carrier 1 is coated in a vacuum chamber 13 with a dye Alq ₃ , for example 40 nm, which emits green.

Subsequently, the surface of the micro-structured intermediate carrier 1 coated with the organic material 6 is transferred to a substrate 7, for example a relatively proximity-spacing (typically in the case of optical lithography) For example, 30 [micro] m) or directly in contact. The organic material 6 is then exposed in the other segment of the vacuum chamber 13 by the quartz glass 2 using a radiation source 8, for example a halogen lamp. At this time, only the areas with the light-absorbing layer 4 are sufficiently heated so that the organic material 6 is only evaporated at that location and settled in the surface area of the substrate 7 facing the place ( 2). Since the heat capacity of the absorbing layer is small, the heating can be done up to the evaporation temperature in the subsecond-range. After the radiation source is switched off by the shutter 9, rapid cooling of the absorbing layer is achieved by thermal coupling to an intermediate carrier having a relatively high heat capacity.

The light source 8 can be switched on or switched off via the shutter 9 similarly to the case of optical lithography. The smaller the distance between the microstructured surface of the microstructured intermediate carrier 1 and the substrate 7, the smaller the amount of dispersed vapor, i.e., the amount of organic material 6 that condenses in unintended places. As an alternative to the shutter, the light source can move relative to the micro-structured intermediate carrier (mask) 1 similarly to the scanner.

In the case of a three-color screen, in one additional step according to FIG. 3, the organic material 6 is introduced by the inflow of light through the quartz glass 2, since the material yield is only about 30% But can be evaporated by the coated surface of the microstructured intermediate carrier 1, resulting in heating of the entire surface. For this purpose, a heating device 10, that is to say a heat radiator, may be used. The heating device 10 is switched off after the remaining 70% has been evaporated in the exposure chamber, so that the vapor can be uniformly deposited on the surface of the microstructured intermediate carrier 1 again.

In one variant of the described embodiment, the microstructured intermediate carrier 1 comprises a thin layer 3 (e.g. 100 nm thick Ag) or a light absorbing thin layer 4 (e.g. 100 nm thick SiC _x ) of the quartz glass substrate 2, resulting in a mask. In this case, since the SiC _x is chemically inert, the protective layer 5 is not required, so that the light absorbing layer 4 can be coated with the material 6.

6, the microstructured intermediate carrier 1 may comprise a thin layer 3 (e.g., 100 nm thick Ag) that reflects light or a thin layer 4 (e.g., 100 nm thick CrN), resulting in a mask being produced. Subsequently, the microstructured intermediate carrier 1 is then coated with 40 nm dye Alq ₃ , which emits an organic material 6, for example green.

The substrate 7 is then placed on the surface of the microstructured intermediate carrier 1 coated with the organic material 6 such that the direct contact on the microstructured intermediate carrier 1 in the raised regions of the microstructure . This results in an isolated evaporation space 29 formed by the microstructured trenches of the microstructured intermediate carrier 1 and the substrate 7. By the formation of the evaporation space 29, the organic material 6 is completely transported from the intermediate carrier to the substrate 7 locally. One additional advantage is that coating under high vacuum conditions is no longer necessary by the formation of the evaporation space 29 as described above because the dispersion of evaporated material particles and residual gas does not cause expansion of the structure Because.

Subsequently, the organic material 6 is indirectly heated by the source 8 by means of a quartz glass 2, for example by a xenon-scintillation tube. At this time, only the regions having the light-absorbing layer 4 are sufficiently heated so that the organic material 6 is evaporated only in the place, and the surface areas of the substrate 7, do. Since the regions heated on the mask are not in direct contact with the substrate, the heat input to the substrate is very small. Therefore, temperature-sensitive substrates can also be coated.

In one improvement of the above-described embodiment, a layer 3 that reflects the radiation in the first step is disposed on the intermediate carrier 2. Subsequently, the microcarrierization of the intermediate carrier 2 is effected, in which case a trench is formed on the intermediate carrier 2 by an etching step. The intermediate carrier 2 is then coated with a radiation absorbing layer 4. This results in a difference in the layer structure between the trench and the ridge because only one radiation-absorbing layer 4 is disposed in the trench while the layer 4 absorbing radiation is located in the ridge, This is because the radiation is arranged on the reflecting layer 3. As a result, when energy is introduced by the radiation from the rear surface of the intermediate carrier 2, that is, by the flash lamp or the halogen lamp, only the radiation absorbing layer 4 in the trench is heated. The evaporation of the material 6 to be transferred is carried out only in this region. However, no heating takes place in the ridges because the inflow of energy is prevented by the layer 3 reflecting the radiation in this region. A particularly preferred case in this improvement is the case where there is sufficient spacing between the trench and the ridge since the spacing of the intermediate carrier 2 starting from the radiation- This is because heating can also take place by thermal conduction, for example in the ridge. As a result, a situation may arise in which the material 6 to be transferred from the ridge region can be partially evaporated. Thereby, the microstructured transfer of the material 6 makes it particularly impossible to form as sharp a desired edge, so that only a microstructure with a large size can be transported. Therefore, in order to enable thermal separation of the two regions, it is preferable that the distance between the trench and the ridge is sufficiently large. Such an interval increases the thermal resistance, which may increase the temperature difference between the trench and the ridge.

It is also conceivable in one alternative embodiment to reverse arrange the radiation absorbing layer 4 and the radiation reflecting layer 3 due to such spacing, in any case by thermal separation This is because a sharp edge can be formed.

In one alternative of the above-described embodiment, a microstructure formed by the light absorbing layer 4 (e.g., SiC _x of 100 nm thickness) is provided on the intermediate carrier. At this time, the light-absorbing layer 4 forms a ridge on the quartz glass 2. Followed by coating with a light reflecting layer 3 (for example 100 nm thick Ag), which is deposited on the light absorbing layer 4 in the trench and forming a ridge. Subsequently, a direct contact of the microstructured intermediate carrier 1 is achieved by mounting the substrate 7 thereon. Absorbing layer 4 only by the energy input by the radiation source 8 at least in the contact area of the substrate 7 and the microstructured intermediate carrier 1, for example by a xenon-scintillation- And only the ridge is heated thereby. Only in this region the material 6 can be deposited on the substrate 7 to be heated and vaporized and brought into contact. Therefore, when the substrate 7 is embodied as a thin film, a high-temperature embossing effect is exhibited when the material 6 is transported.

In one further embodiment, the material to be transported is an inorganic metal such as, for example, Al, Ag, Cu, or the like.

In a further embodiment, a xenon-scintillation-tube is used as the radiation source 8. The tube is particularly suitable for providing a large energy amount of about 80 MW / m < ² > in a short time. At this time, since the exposure time is about 1 ms, the thermal conduction from the absorption region to the reflection region is reduced to a minimum, and thus the structure width can be made very small.

In a further embodiment, a second material 19, for example a metal such as aluminum, is deposited on a first material 6, e.g. an organic material, to be deposited. For this purpose, a first energy input is first made by the radiation source 8, which is formed in the form of a xenon-flash, whereby the first material 6 is heated and evaporated on the microstructured intermediate carrier 1. The first material is then deposited on the substrate 7. Followed by a second energy input to heat and vaporize the second material 19. The advantage in this embodiment is that the evaporation temperatures of the first and second materials 6, 19 are different from each other. This evaporation temperature difference can selectively evaporate by controlling the amount of energy input.

In one further embodiment, the amount of energy introduced varies with time. Whereby the amount of evaporated material 6, 19 can be correspondingly controlled, thereby allowing the layer thickness of the deposited material 6, 19 on the substrate 7 to be influenced.

In one further embodiment according to FIG. 7, the thickness of the layer of material 6, 19 deposited on the substrate 7 is locally varied. Such a local change of thickness is achieved by the sub-structure 31 which is regularly arranged inside the desired structure 30. For example, the material 6, 19 to be transferred is deposited on the substrate 7 in the form of a quadrate with an edge length of 100 [mu] m and a layer thickness of 50 nm. While other structures on the substrate 7 have a layer thickness of 100 nm. For this purpose, a plurality of small-sized microstructured surfaces having a light absorbing layer 4 are formed on the micro-structured intermediate carrier 1 in the inside of the square, Only 50% of the surface of the structure. A 100 nm thick layer of the material 6, 19 to be transferred is then deposited on the microstructured intermediate carrier 1. Subsequently, an energy input is then carried out by means of a radiation source 8 embodied for example in a xenon-scintillation-tube. Due to the dispersion of particles in the exposure process, one square is formed on the substrate 7 with a layer thickness of only 50 nm from the material on the mask's sub-structure 31. The dispersion strength of the vapor particles of the vaporized material (6, 19) is affected by the spacing between the microstructured intermediate carrier (1) and the substrate (7) and by the ambient pressure. The layer thickness of the material (6, 19) deposited on the substrate (7) is arbitrarily formed by the total number of sub-structures or the total number of the surfaces of the sub-structure. The maximum layer thickness that can be formed corresponds to a layer of material (6, 19) to be transferred which is deposited on the microstructured intermediate carrier (1).

In one further embodiment, a first material 6 having a high evaporation temperature, for example a metal such as Ag, and then a second material 19 having a low evaporation temperature, for example an organic material, Is deposited on the structured intermediate carrier (1). Thereafter, an energy input is made by the radiation source 8, which is embodied as xenon-flash. At this time, the second material 19 is deposited on the substrate 7 from the finely structured intermediate carrier 1 by means of the first low energy beam. The surfaces of the mask and the substrate are in contact with each other during the first flash. Subsequently, the distance between the substrate 7 and the microstructured intermediate carrier 1, as used in optical lithography, is enlarged by, for example, 50 micrometers. The first material 6 is then deposited on the substrate 7, with the result that an energetically high second flash is made for the purpose of evaporating the remaining first material 6 on the microstructured intermediate carrier 1 Not only covers the second material 19 but also overlaps with the second material 19 by the dispersion of vaporized particles of the first material 6 due to the spacing of the microstructured intermediate carrier 1. [ This situation corresponds to the encapsulation of the first material 6 and the second material 19.

In one improvement of the above-described embodiment, the first material 6 deposited on the microstructure formed in the form of a sub-structure on the microstructured intermediate carrier 1 is irradiated by the radiation source 8 embodied in a xenon- And is deposited on the substrate 7 by energy input. In this improvement example, the deposition of the first material 6 is made with relatively little spacing from the substrate 7 and the microstructured intermediate carrier 1, so that the vaporized particles of the first material 6 The dispersion is not done at all or only slightly, so that the material 6 deposited on the substrate 7 appears in the form of the transferred sub-structure. Subsequently, the gap between the microstructured intermediate carrier 1 coated with the substrate 7 and the second material 19 is enlarged. During the second radiation inflow by the xenon flashlight 8, which is the process by which the second material 19 is evaporated, the relatively large spacing of the substrate 7 and the microstructured intermediate carrier 1 causes the evaporated second material 19 ) And, consequently, dispersion with the residual gas, so that the entire surface of the microstructure formed by the sub-structure is coated with the material 19 on the substrate 7. Thereby encapsulation of the first material 6 by the second material 19 takes place.

One further embodiment according to Fig. 4 shows one variant of the evaporator according to the invention in a continuous coating plant. In this variant, the microstructured intermediate carrier 1 is embodied as a quartz drum. The microstructure was preferably provided on the surface of the quartz drum in relation to Example 1. [ A continuous coating installation 11 for coating a substrate 7, for example a thin film, which passes through the continuous coating installation 11 as an infinite roller - a dye which emits red in the first vacuum chamber 13 (6). ≪ / RTI > For this purpose, the organic material 6 is heated in the evaporator 12 and evaporated. As a result, the organic material 6 is deposited on the microstructured intermediate carrier 1. The area between the evaporator 12 and the substrate is separated by the shielding portion 14 so that the situation where the organic material 6 is unwantedly introduced into the substrate 7 from the vapor space 17 does not occur . The side of the shield 14 facing towards the evaporator 12 is maintained at the evaporation temperature to prevent the organic material 6 from condensing in the shield 14.

The organic material 6 deposited due to the continuous rotation operation 15 of the microstructured intermediate carrier 1 moves in the direction of the substrate 7 until it reaches one position with respect to the substrate 7. [ In this place, the organic material 6 is heated and evaporated by the light source 8, which is focused on the surface of the intermediate carrier in the direction of the substrate and arranged inside the micro-structured intermediate carrier 1. Similar to the first embodiment, in this embodiment, heating and evaporation are performed only in the region of the microstructured intermediate carrier 1 without the light reflection layer 3. As a result, evaporation of the substrate 7 is effected by the organic material 6 depending on the microstructure.

The organic material 6 remaining in the region 3 reflecting the light on the microstructured intermediate carrier 1 owing to the continuous turning operation 15 of the microstructured intermediate carrier 1, As shown in FIG. Wherein the microstructured intermediate carrier 1 passes through a first region in the vapor space 17 and is strong enough to evaporate the remaining organic material by the focused light in one line in the first region Heating is performed. Wherein the lines of light are arranged parallel to the rotation axis. Subsequently, the micro-structured intermediate carrier 1 is cooled in the vapor space until the organic material is again condensed on the surface of the micro-structured intermediate carrier 1. The source of radiation for forming the line may be in the interior of the intermediate carrier similar to the source of radiation 8 and the region in which the microstructured intermediate carrier 1 and the shielding portion 14 meet each other on the right side of the vapor space 17 As shown in FIG. The radiation source 8 is also focused on the surface of the microstructured intermediate carrier 1, but is focused in the normal direction of the substrate.

The substrate 7 is conveyed to the next coating apparatus due to its own continuous operation 16. Where further coating is effected by the organic material 6 which emits green similar to the first coating. Finally, the coating is made with an organic material 6 that emits blue in the last coating step. Thus, a complete RGB-coating can be carried out in the continuous coating facility 11.

5, there is shown a cylindrical microstructured intermediate carrier 1 for coating a strip-shaped substrate 7, which is rotatable about a rotational axis 26 25). In this embodiment, the cylindrical microstructured intermediate carrier 1 consists of a quartz drum coated, for example, with an absorption layer made of CrN / SiO ₂ , in which case the SiO ₂ - Oxidation must be avoided. Alternatively, an absorber layer made of SiC may be used. The outer diameter of the quartz drum is 300 mm in this embodiment. The wall thickness of the quartz drum is 10 mm. The cylindrical microstructured intermediate carrier 1 rotates at a constant speed about the rotation axis 26 and in the rotation direction 25.

The process of coating the micro-structured intermediate carrier 1 with the first material 6 is carried out in the first position by means of the vapor tube 23 of the first evaporator. At this time, the steam pipe 23 is made of, for example, SiC and has a line source having a rectangular box-top attachment. After the microstructured intermediate carrier 1 is coated in the first position with the first material 6, the microstructured intermediate carrier 1, coated with the first material 6 due to the continuous operation of the microstructured intermediate carrier 1, The surface area of the intermediate carrier 1 is rotated by the second steam pipe 24 of the second evaporator in the second position. Where the coating is likewise made with the second material 19. It should be noted that the evaporation temperature of the second material 19 should be lower than the evaporation temperature of the first material 6 at the first location. Otherwise, the relatively hot steam tube 24 of the second material 19, which has a relatively higher evaporation temperature, heats up the micro-structured intermediate carrier 1 so much that it is already heated below the steam tube 23 Material 6, which has been deposited and has a relatively low evaporation temperature, may be undesirably evaporated at the second location. Shielding plates 22 are provided to reduce radiant heat to minimize the thermal effects of the first and second steam tubes 23 and 24. With such a shielding plate, the two steam tubes 23, 24 or the resulting deposition rates can be adjusted independently of each other.

The surface area of the microstructured intermediate carrier 1 coated with the first and second materials 6 and 19 owing to the continuous turning operation 25 of the microstructured intermediate carrier 1 can be reduced by the radiation source (8). The radiation source is arranged on the side facing the coated surface of the intermediate carrier 1, which is microstructured inside the quartz drum 1. The coated surface of the microstructured intermediate carrier 1 is brought into contact with the substrate at this position and moves through the intermediate carrier 1 which is continuously microstructured in the substrate transfer direction 16.

The materials are heated and evaporated by the radiation source 8 in order to deposit the materials 6, 19 on the substrate 7. As a result, the materials (6, 19) are deposited on the substrate (7). The microstructured intermediate carrier 1 is preferably cooled by the cooling device 28 in the region of the radiation source 8 to minimize its continuous temperature rise. The radiation source 8 as well as the cooling device 28 may be present outside the vacuum chamber. At this time, the radiation source 8 may be embodied as, for example, a halogen-flashlight or a xenon-scintillation-tube.

In order to cool the absorber layer on the surface of the quartz drum 1, a further water-cooled surface 14 is provided, which surrounds a part of the microstructured intermediate carrier 1. At this time, the water-cooled surface 14 can be realized as a metal part through which cooling water flows. The quartz drum 1 is indirectly cooled by the absorption of radiant heat by the water-cooled surface 14.

In addition, one further indirect cooling possibility of, for example, quartz drum 1 may arise, for example, from a cooling device 28 consisting of a fixed cooling water tube, And has an outer wall for absorbing radiation.

In order to maximize the yield of the deposited material 6,19 a heated vapor panel 27 is applied to the first and second locations 23,24 in the region of the vapor tubes 23,24 of the first and second evaporators, As shown in FIG. At this time, the interval between the quartz drum 1 and the panel 27 corresponds to about 1/10 of the half panel length in the moving direction of the quartz drum 1. Therefore, when the distance between the quartz drum 2 and the panel 27 is 2 mm, the panel length of the heated steam panel 27 reaches about 40 mm.

The driving of the microstructured intermediate carrier 1 is carried out via a drive roller 20, which is arranged in the edge region of the micro-structured intermediate carrier 1, respectively. In order to prevent adverse effects on the quality of the layer, contact of the drive roller 20 with the coated area of the surface of the microstructured intermediate carrier 1 is avoided. At this time, the driving roller 20 can be embodied, for example, from rubber, because the temperature of the microstructured intermediate carrier 1 is clearly below 100 ° C in this location.

The amount of deposited material 6,19 is dependent on the transport rate of the substrate and the interaction of the amount of vaporized material 6,19 deposited on the microstructured intermediate carrier 1 through the vapor tubes 23,24 . Thus, the layer thickness of the material 6, 19 deposited on the substrate 7 can be adjusted accordingly through previously known parameters.

In one improvement of the above-described embodiment, direct contact is made between the substrate 7 and the cylindrical microstructured intermediate carrier 1 at least in the region of the radiation source 8. When the substrate 7 is formed in a flexible manner in the form of a strip or a thin film, continuous contact of the micro-structured intermediate carrier 1 by the substrate 7 up to the area of the radiation source 8, This is possible.

1: fine structured intermediate carrier 2: intermediate carrier
3: light reflecting layer 4: light absorbing layer
5: Protective layer 6: First material
7: substrate 8: source of radiation
9: Shutter 10: Heating device
11: continuous coating equipment 12: evaporator
13: vacuum chamber 14: shielding part or cooling part
15: rotation direction of the intermediate carrier 16: substrate transfer direction
17: steam space 18: heating unit for shielding
19: second material 20: drive - or bearing roller
21: additional source of radiation 22: shielding plate
23: Steam tube of the first steam device 24: Steam tube of the second steam device
25: Direction of rotation of the cylindrical intermediate carrier
26: rotating shaft of the cylindrical intermediate carrier
27: heated steam panel 28: cooling device
29: Evaporation space
30: Microstructure formed from substrate structure
31: Substructure

Claims (34)

A method for locally depositing a material (6, 19) on a substrate (7), the local transfer of the material (6, 19) being carried out by an intermediate carrier (2)
The material (6, 19) is transferred from the intermediate carrier (2) to the substrate (7) in a microstructured state,
The local deposition of the material (6, 19) is effected by radiation inflow of radiation by the microstructured intermediate carrier (1), wherein the microstructured intermediate carrier (1) has a microstructure , A method for locally depositing a material on a substrate transported from the micro-structured intermediate carrier (1) to a substrate (7) in a state where the material (6, 19) is microstructured by the microstructure,
A coating is made in the vacuum chamber 13 and a rotating cylinder is used as the microstructured intermediate carrier 1 and during the deposition of the material 6, 19 onto the substrate 7, (7) are continuously moved.
A method for locally depositing a material on a substrate. The method according to claim 1,
Characterized in that the local deposition of the material (6, 19) is carried out by means of a radiated energy input by the microstructured intermediate carrier (1), wherein the material (6, 19) ) And is deposited in a microstructured state on the substrate (7) after evaporation.
A method for locally depositing a material on a substrate. 3. The method according to claim 1 or 2,
Of the layer (4) absorbing radiation, which takes place on the layer (3) reflecting the radiation, by a first deposition of a layer (3) reflecting the microstructured radiation which is made on the transparent intermediate carrier (2) Fabricating said microstructured intermediate carrier (1) by deposition and by an uncoated microstructured surface of said intermediate carrier (2)
- depositing the material (6, 19) on the radiation absorbing layer (4), and
Characterized in that the directional deposition of the material (6, 19) is effected corresponding to the microstructure on the substrate (7) by locally evaporating the material (6, 19) to be transferred.
A method for locally depositing a material on a substrate. 3. The method according to claim 1 or 2,
- fabricating the microstructured intermediate carrier (1) by a first deposition of a layer (3) reflecting the microstructured radiation which is made on the intermediate carrier (2) which is transparent,
- a second deposition step of depositing the material (6, 19) that absorbs radiation onto the layer (3) that reflects the microstructured radiation; and
Characterized in that the directional deposition of the material (6, 19) is effected corresponding to the microstructure on the substrate (7) by locally evaporating the radiation absorbing material (6, 19)
A method for locally depositing a material on a substrate. 3. The method according to claim 1 or 2,
- fabricating the microstructured intermediate carrier (1) by a first deposition of a layer (4) of microstructured radiation absorbing on the intermediate carrier (2) which is transparent,
- a second deposition step of depositing the material (6, 19) on the layer (4) that absorbs the radiation, which is microstructured, and
- the step of directing deposition of the material (6, 19) corresponding to the microstructure on the substrate (7) by locally evaporating the material (6, 19) by means of the radiation absorbing layer ≪ / RTI >
A method for locally depositing a material on a substrate. 3. The method according to claim 1 or 2,
- fabricating said microstructured intermediate carrier (1) by a first deposition of a radiation absorbing layer (4) on said transparent intermediate carrier (2)
- a second deposition step of depositing the material (6, 19) on the radiation absorbing layer (4)
- locally evaporating said material (6, 19) by micro-structured energy input by said radiation source (8) by said radiation absorbing layer (4) Characterized in that directive deposition of the material (6, 19) takes place.
A method for locally depositing a material on a substrate. 3. The method according to claim 1 or 2,
Characterized in that a transparent protective layer (5) is provided on the microstructured intermediate carrier (1) prior to the deposition of the material (6, 19)
A method for locally depositing a material on a substrate. 3. The method according to claim 1 or 2,
The remaining material (6, 19) after the deposition of the material (6, 19) on the substrate (7) is heated by the heating device (10) on the microstructured intermediate carrier (1) Is deposited on the microstructured intermediate carrier (1), wherein the material (6, 19) is deposited as a uniform layer.
A method for locally depositing a material on a substrate. The method according to claim 6,
Characterized in that the radiation of the radiation source (8) is controlled by a shutter (9)
A method for locally depositing a material on a substrate. 3. The method according to claim 1 or 2,
Characterized in that the microstructure of the microstructured intermediate carrier (1) is formed by structured deposition of a layer (3) reflecting the radiation.
A method for locally depositing a material on a substrate. The method of claim 3,
Characterized in that the microstructure of the layer (3) reflecting the radiation is made by optical lithography.
A method for locally depositing a material on a substrate. 3. The method according to claim 1 or 2,
The substrate 7 is in the transfer region of the material 6, 19 while the material 6, 19 is deposited on the microstructured intermediate carrier 1,
Characterized in that the material (6, 19) is raised directly from the micro-structured intermediate carrier (1) on the substrate (7) at least in the region of transport of the material (6, 19)
A method for locally depositing a material on a substrate. 13. The method of claim 12,
Characterized in that the transfer of the material (6, 19) takes place in the region where the substrate is loaded by the microstructured intermediate carrier (1)
A method for locally depositing a material on a substrate. 13. The method of claim 12,
The substrate 7 is in the transfer region of the material 6, 19 while the material 6, 19 is deposited on the microstructured intermediate carrier 1,
Characterized in that the material (6, 19) is raised directly onto the substrate (7) by means of the microstructured intermediate carrier (1) at least in the transport region of the material (6, 19)
Wherein an evaporation space (29) is formed by the substrate (7) and the microstructured intermediate carrier (1) and the material (6, 19) is transferred into the evaporation space (29)
A method for locally depositing a material on a substrate. 3. The method according to claim 1 or 2,
Characterized in that an additional material (19) is deposited on a first material (6) to be transferred, said additional material having a different evaporation temperature than said first material (6)
A method for locally depositing a material on a substrate. 16. The method of claim 15,
The material (6, 19) is selectively deposited on the substrate (7) through the amount of incoming energy and the heating and evaporation of the material (6, 19) is performed in connection therewith, Characterized in that it is achieved through radiation efficiency.
A method for locally depositing a material on a substrate. 3. The method according to claim 1 or 2,
A local variation in the layer thickness of the material (6, 19) to be transported which is deposited on the substrate (7) is determined by the material (6, 19) to be transported during transport from the microstructured intermediate carrier 6, 19) are dispersed.
A method for locally depositing a material on a substrate. 16. The method of claim 15,
The dispersion of the particles during the transfer of the material 6, 19 is carried out by a change in the spacing between the micro-structured intermediate carrier 1 and the substrate 7 during transfer of the material 6, 19 and / , And wherein the step (c)
A method for locally depositing a material on a substrate. An apparatus for locally depositing a material (6) in a microstructured state on a substrate (7)
A transparent intermediate carrier 2, a layer 3 that reflects the microstructured radiation and a layer 4 that absorbs the radiation onto which the material 6 to be transferred is deposited, An apparatus for locally depositing material on a substrate comprising a layer system of radiation sources (8) arranged on the side of a microstructured intermediate carrier (1)
The microstructured intermediate carrier 1 is embodied as a continuously moving cylinder,
Characterized in that the microstructured intermediate carrier (1) is arranged in a vacuum chamber (13) of a continuous coating facility for coating with the material (6), whereby the microstructured intermediate carrier (1) Characterized in that it is surrounded by a vacuum of the vacuum chamber (13)
An apparatus for locally depositing material on a substrate. 20. The method of claim 19,
Characterized in that a protective layer (5) is arranged on the radiation absorbing layer (4) and the material (6) to be transferred onto the protective layer is deposited.
An apparatus for locally depositing material on a substrate. 20. The method of claim 19,
Characterized in that said radiation-absorbing layer (4) is arranged on said radiation-reflecting layer (3)
An apparatus for locally depositing material on a substrate. 20. The method of claim 19,
Characterized in that said radiation reflecting layer (3) is arranged on said radiation absorbing layer (4)
An apparatus for locally depositing material on a substrate. 23. The method according to any one of claims 19 to 22,
Characterized in that the heating device (10) is arranged on the side of the microstructured intermediate carrier (1) coated with the material (6)
An apparatus for locally depositing material on a substrate. 23. The method according to any one of claims 19 to 22,
Characterized in that the microstructured intermediate carrier (1) comprises a cooling device.
An apparatus for locally depositing material on a substrate. 23. The method according to any one of claims 19 to 22,
The vacuum chamber 13 has an evaporator 12 for heating and evaporating the material 6 and is also provided with a shield 14 for isolating the substrate 7 from the evaporator 12 Characterized in that the shield (14) surrounds the microstructured intermediate carrier (1).
An apparatus for locally depositing material on a substrate. 26. The method of claim 25,
Characterized in that the shield (14) can be heated.
An apparatus for locally depositing material on a substrate. 27. The method of claim 26,
Characterized in that the radiation source (8) is arranged inside the microstructured intermediate carrier (1)
An apparatus for locally depositing material on a substrate. 23. The method according to any one of claims 19 to 22,
Characterized in that said radiation source (8) is embodied as a scintillation-
An apparatus for locally depositing material on a substrate. 29. The method of claim 28,
Characterized in that said radiation source (8) embodied as a scintillation tube is a xenon-scintillation-
An apparatus for locally depositing material on a substrate. 23. The method according to any one of claims 19 to 22,
Wherein the microstructure (30) on the microstructured intermediate carrier (1) is composed of a substructure (31) and the substructures are arranged on the microstructured intermediate carrier (1) ) Of the surface of the substrate
An apparatus for locally depositing material on a substrate. delete delete delete delete

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