WO2010150522A1 - Module à composant intégré et procédé de fabrication de celui-ci - Google Patents

Module à composant intégré et procédé de fabrication de celui-ci Download PDF

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Publication number
WO2010150522A1
WO2010150522A1 PCT/JP2010/004147 JP2010004147W WO2010150522A1 WO 2010150522 A1 WO2010150522 A1 WO 2010150522A1 JP 2010004147 W JP2010004147 W JP 2010004147W WO 2010150522 A1 WO2010150522 A1 WO 2010150522A1
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Prior art keywords
component
opening
module
electrode
solder
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PCT/JP2010/004147
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English (en)
Japanese (ja)
Inventor
山本祐樹
西村重夫
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株式会社村田製作所
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Publication of WO2010150522A1 publication Critical patent/WO2010150522A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4828—Etching
    • H01L21/4832—Etching a temporary substrate after encapsulation process to form leads
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
    • H05K1/188—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit manufactured by mounting on or attaching to a structure having a conductive layer, e.g. a metal foil, such that the terminals of the component are connected to or adjacent to the conductive layer before embedding, and by using the conductive layer, which is patterned after embedding, at least partially for connecting the component
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621—Components characterised by their electrical contacts
    • H05K2201/10636—Leadless chip, e.g. chip capacitor or resistor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/14—Related to the order of processing steps
    • H05K2203/1461—Applying or finishing the circuit pattern after another process, e.g. after filling of vias with conductive paste, after making printed resistors
    • H05K2203/1469—Circuit made after mounting or encapsulation of the components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3431—Leadless components
    • H05K3/3442—Leadless components having edge contacts, e.g. leadless chip capacitors, chip carriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a method of manufacturing a component built-in module in which a component such as a chip component is mounted on a metal film and sealed with resin, and more specifically to improvement of resin sealing.
  • This type of component-embedded module in which mounted components are embedded inside the resin substrate, mounts chip components etc. on a metal film, such as copper foil, which becomes the wiring layer, via a conductive bonding material such as solder. It is formed by sealing with a thermosetting resin or a photocurable resin.
  • Patent Document 1 abtract, paragraph [ 0010], [0013], [0019]-[0046], FIG.
  • FIG. 7 (a) to 7 (e) are cross-sectional views illustrating a previously proposed method for manufacturing a component built-in module.
  • an insulating layer (resist film) 112 is formed on the surface of the metal foil 111 by the process of FIG.
  • an opening 112a is formed in the insulating layer 112 so that a part of the metal foil 111 is exposed.
  • solder 113 is applied to the inside of the opening 112a by the process of FIG.
  • the mounting component 114 is arranged on the insulating layer 112 so that the solder 113 inside the opening 112a and the electrode 115 of the mounting component 114 are in contact with each other by the process of FIG.
  • the solder 113 is heated and melted.
  • the metal foil 111 and the electrode 115 are welded.
  • a sheet-like prepreg 116 containing an inorganic filler and a thermosetting resin is disposed on the metal foil 111 and aligned so as to overlap the metal foil 111 by the process of FIG. 7E, the prepreg 116 is stacked and pressure-bonded on the insulating layer 112 and the mounting component 114, and the prepreg 116 is filled and cured to form a resin layer 116a in which the mounting component 114 is embedded.
  • the metal foil 117 and the like are processed to form a wiring pattern, and via conductors and the like are formed in the resin layer 116a to manufacture a component built-in module.
  • the size (area) of the opening 112a is not particularly considered, but the opening 112a in FIG. 7 is considerably wider than the area of the electrode 115 of the mounting component 114. It is. That is, in order to securely mount the mounting component 114, the area of the opening 112a is generally set sufficiently larger than the electrode area on the mounting surface side of the electrode 115 of the mounting component 114. In this case, the solder 113 applied to the opening 112a melts and spreads very thinly in the opening 112a.
  • the mounting component 114 in which the electrode 115 is joined to the opening 112a via the solder 113 has a slight height (caliber) on the lower side due to variations in the thickness of the solder 113, a slight dimensional error of the mounting component 114 itself, and the like. A gap is created. Further, when the insulating layer (resist film) 112 is deformed so that its surface undulates when thermally contracted, a similar narrow gap is easily formed on the lower side of the mounting component 114. In addition, it is difficult to fill the prepreg 116 in such a narrow gap. In particular, when the gap is narrower than the filler particle size, the filling of the prepreg 116 becomes extremely difficult, and a narrow gap is formed below the mounting component 114. Resin filling is incomplete.
  • FIG. 8 is a cross-sectional view illustrating a state of resin filling on the lower surface side of the mounting component 114, and a narrow gap ⁇ is generated.
  • the present invention improves the resin-sealing characteristics of the component built-in module by preventing the resin filling failure, and prevents the short circuit failure (solder flash etc.) from occurring due to the resin filling failure. For the purpose.
  • an opening is selectively formed at a component mounting position of a metal film, and the electrode of the component is connected to the opening through a conductive bonding material.
  • the opening is formed to have a predetermined area smaller than the electrode area on the mounting surface side of the electrode of the component.
  • the conductive bonding material is applied to the opening so as to cover the opening, the electrode of the component is bonded to the conductive bonding material raised by heating and melting, and the component is mounted on the metal film,
  • a resin layer for sealing is formed by filling and curing the resin so that the component is embedded on the metal film (Claim 1).
  • the predetermined area is preferably 0.1y ⁇ x ⁇ 0.9y, where x is the area of the opening and y is the electrode area on the mounting surface side of the electrode of the component.
  • the opening is preferably formed by surface treatment of the metal film by laser irradiation (Claim 3), and is preferably formed by photoresist treatment of the metal film (Claim 4).
  • the surface of the metal film is preferably a roughened surface having poor wettability with respect to the conductive bonding material (Claim 5), and the electrode peripheral surface portion of the component is rough with poor wettability with respect to the conductive bonding material. It is also desirable that it be a conversion surface (Claim 6). It is practical that the metal film is a metal foil and the conductive bonding material is solder.
  • the component built-in module according to the present invention includes a metal film, an opening selectively formed in the metal film in a predetermined area smaller than an electrode area on the mounting surface side of the electrode of the component, and a bulge on the opening.
  • a conductive bonding material, a component in which an electrode is bonded to the conductive bonding material and mounted on the metal film, and the component is provided on the metal film so as to incorporate the component, thereby sealing the component.
  • a resin layer (claim 8). It is practical that the metal film is a metal foil and the conductive bonding material is solder. In the present invention, the “opening” means a recess having good solder wettability.
  • the opening at the component mounting position of the metal film is formed in a predetermined area smaller than the electrode area on the mounting surface side of the electrode of the component to be mounted. Then, when the conductive bonding material was heated and melted with the conductive bonding material applied to the opening and the electrode of the component placed on the opening, the molten conductive bonding material swelled due to surface tension. The component is mounted by being bonded to the conductive bonding material in a state where the component is lifted by the conductive bonding material. At this time, a gap which is larger than the conventional one and allows the resin prepreg to easily enter is formed below the component.
  • the resin is reliably filled into the lower gap of the component and hardened, and there is no gap under the component, that is, the resin layer for sealing in the absence of defective resin filling. Is formed to improve the characteristics of resin sealing.
  • the manufactured component built-in module does not cause a short circuit failure (solder flash or the like) due to a resin filling failure due to heating of a product test after manufacture or the like, and the failure rate is extremely reduced.
  • the predetermined area of the opening of the metal film is x
  • the area of the opening is x
  • the electrode area on the mounting surface side of the electrode of the component is y. It is possible to manufacture a module with a built-in component which is formed to have a preferable size of 0.1y ⁇ x ⁇ 0.9y found from experiments and the like, and has the same effect as that of the invention of claim 1.
  • the manufacturing efficiency is improved and the cost is reduced.
  • no insulating layer (resist film) is formed on the surface of the conductive bonding material, so there is no narrow void associated with thermal contraction of the insulating layer (resist film), and the resin is filled more reliably.
  • the sealing resin layer is formed in a state where there is no defect and the resin sealing characteristics are improved.
  • the conventional method in which the opening portion forms an insulating layer (resist film) on the surface of the metal film by the photoresist treatment of the conductive bonding material. Resin sealing characteristics can be improved by the same manufacturing method.
  • the periphery of the opening is a roughened surface having poor wettability with respect to the conductive bonding material. For this reason, it is possible to prevent the conductive bonding material raised by the surface tension from spreading from the opening.
  • the conductive bonding material raised by the surface tension is applied to the electrode peripheral surface of the component. It can be made not to join to a surface part.
  • the effects of the inventions of claims 1 to 6 can be achieved with a practical configuration in which the metal film is a metal foil and the conductive bonding material is solder. Can do.
  • the conductive bonding material swells in an opening having a predetermined area smaller than the electrode area on the mounting surface side of the electrode of the component selectively formed on the metal film. Since the electrode of the component is bonded to the conductive bonding material, it is possible to provide a component built-in module that can obtain the same effect as that of the first aspect of the invention.
  • the component built-in module of the present invention of claim 9 it is possible to provide a component built-in module having the effect of claim 8 with a practical configuration in which the metal film is a metal foil and the conductive bonding material is solder. it can.
  • FIG. 1 shows a configuration of a component built-in module 1 of the present embodiment, and the component built-in module 1 includes a metal foil 2 processed into a wiring pattern at the lowermost layer.
  • the metal foil 2 is an example of the metal film of the present invention, and is, for example, a copper foil.
  • the surface of the metal foil 2 is uniformly processed into a roughened surface with poor solder wettability as indicated by black circles in the figure, but is selectively positioned immediately below the electrodes 31 at both ends of the component 3, in other words, In the portion of the position where the component 3 of the metal foil 2 is mounted (component mounting position of the present invention), as indicated by the width w 1 in the drawing, the area of the portion of the electrode 31 facing the opening 4 An opening 4 having a small predetermined area and good solder wettability is formed.
  • the component 3 is, for example, a passive component such as a capacitor or a coil, or a chip component of an active element such as a transistor or an IC, and has electrodes 31 at the left and right ends. The predetermined area will be described later.
  • the solder 5 which is an example of the conductive bonding material of the present invention, is formed in a raised state, and the electrode 31 of the component 3 is bonded to the upper surface of the solder 5. At this time, the component 3 is lifted by the rise of the solder 5.
  • a resin layer 6 is provided on the metal foil 2 so as to incorporate the component 3, and the resin layer 6 seals the component 3.
  • the resin layer 6 is obtained by curing a thermosetting resin such as an epoxy resin, a phenol resin, or a cyanate resin, and has a particle size of, for example, 5 to 30 ⁇ m in order to eliminate the difference in coefficient of thermal expansion from the metal foil 2 or the like.
  • Inorganic powder filler inorganic filler
  • silica powder and alumina powder such as silica powder and alumina powder.
  • the component built-in module 1 having the above-described configuration, the component 3 is lifted by the solder 5, and the height (opening) h of the gap below the component is determined by the particle size of the filler contained in the thermosetting resin. It is sufficiently large, for example, 40 ⁇ m or more. Therefore, the resin is filled without a gap, and no gap is generated in the resin layer 6. Therefore, the resin layer 6 for sealing is formed without any defective resin filling, and the characteristics of the resin sealing are improved compared to the conventional one, and a short circuit failure (solder flash etc.) occurs due to heating of the product test after manufacture. None do.
  • the wettability with respect to the conductive bonding material is reduced by roughening treatment, resist treatment, or the like other than the portion of the electrode 31 of the component 3 that faces the opening 4. Processing may be performed.
  • a sheet-like metal foil 2 is prepared by the metal foil preparation process of FIG. 2A.
  • the metal foil 2 is, for example, an electrolytic copper foil having a thickness of 18 ⁇ m, and the surface (upper surface) is a roughened surface having a large surface roughness and poor solder wettability as indicated by black circles in the figure (Claim 5).
  • the back surface is a surface with good solder wettability.
  • a carbon dioxide gas laser is formed in the opening 4 having a predetermined area smaller than the electrode area of the component 3 at the position of the electrode 31 on the upper surface of the metal foil 2 (the aforementioned component mounting position).
  • the opening 4 is smoothed by the heat, and the opening 4 is selectively processed into a wet surface with good solder wettability by hard etching of laser processing. Since the oxide film is easily formed on the surface of the opening 4, the metal foil 2 is dipped in an appropriate acid solution to be pickled and removed before moving to the next step. It is preferable.
  • the surface roughness Ra of the region other than the opening 4 is 0.5 to 1.5 ⁇ m, whereas the surface roughness Ra of the opening 4 is set to 0.1 to 0.5 ⁇ m.
  • a solder paste is applied to the upper surface of the metal foil 2 through a mask in which the opening 4 is exposed by the printing process of FIG. 2C, and the solder 5 is printed on the opening 4 to be applied to a predetermined thickness.
  • the thickness of the solder 5 is, for example, such that the amount of solder 5 used is the same as the amount used in the conventional manufacturing method.
  • the component 3 is mounted by placing the electrode 31 of the component 3 on the solder 5 by the component mounting process of FIG. 2D, and the metal foil 2 having the component 3 mounted by the reflow process of FIG. To a melting temperature of 5 (eg 250 ° C.). At this time, the melted solder 5 swells due to surface tension. As a result, the part 3 is lifted as indicated by the arrow line, and an opening (for example, 40 ⁇ m) sufficiently larger than the particle size of the inorganic filler of the resin layer 6 is formed below the part 3. The electrode 31 is joined to the solder 5 in this state, and the component 3 is mounted on the metal foil 2.
  • a melting temperature of 5 eg 250 ° C.
  • a prepreg of a thermosetting resin sheet containing an inorganic filler is prepared, and the prepreg is heated at a temperature at which the prepreg does not solidify, for example, in a vacuum environment of 120 ° C. Is pressed from above the metal foil 2. At this time, the fluid prepreg is reliably filled in the gap ⁇ . Thereafter, the heating temperature is raised to a temperature at which the prepreg is hardened (for example, 180 ° C.), and the resin layer 6 is formed by solidifying the prepreg. At this time, the resin layer 6 is filled with the resin without any gap, and no gap (space) is generated below the component 3.
  • the process proceeds to the wiring pattern forming step of FIG. 2G, and the metal foil 2 is processed by photoetching or the like according to the wiring pattern to form the component built-in module 1.
  • the predetermined area of the opening 4 is formed such that the solder 5 is sufficiently raised in the opening 4, and an appropriate gap t is secured between the metal foil 2 shown in FIG. 3A and the lower end of the component 3. Therefore, it is necessary to set so that the resin is filled below the part 3 without a gap.
  • the area of the opening 4 is x
  • the electrode area on the mounting surface side of the electrode 31 of the component 3 is y
  • the ratio x is the ratio x
  • the tombstone phenomenon is caused by the surface tension of the solder when a component such as a square chip resistor or multilayer chip capacitor is reflowed toward the component land on one side. This phenomenon is caused by the imbalance between the surface tension of the solder and the center of gravity of the component caused by a slight delay in temperature rise, and is also called the Manhattan phenomenon.
  • the area of the opening 4 is set to 10% to 90% of the electrode area of the component 3, preferably 30% of the electrode area of the component 3.
  • the resin layer 6 for sealing is formed without any defective resin filling due to the rise of the solder 5.
  • the sealing characteristics are improved as compared with the conventional one. Therefore, the component built-in module 1 does not cause a short circuit failure (solder flash or the like) due to a defective resin filling due to heating of a product test after manufacture or the like, and the failure rate is extremely reduced.
  • the opening 4 is formed in a short time by surface treatment of the metal foil by laser irradiation, the manufacturing efficiency can be improved and it can be manufactured at low cost, and an insulating layer (resist film) is formed on the surface of the metal foil. ) Is not formed, narrow gaps due to thermal contraction of the insulating layer (resist film) are not generated, and the resin layer 6 for sealing is more reliably formed in a state where there is no defective resin filling. The stopping characteristics can be improved.
  • the opening 4 is formed by surface treatment of hard etching of the metal foil by laser irradiation, and it is not necessary to form an insulating layer (resist film) on the surface of the metal foil 2, and deformation due to heat shrinkage of the insulating layer due to heating or the like. The problem does not occur.
  • FIG. 4 shows the portion of the metal foil 2 at the component mounting position with the resin layer 6 omitted.
  • the part of the metal foil 2 at the diagonally mounted part is an electrode pad (electrode land) 21 having a predetermined shape that is rectangular or circular in plan view.
  • the width of the electrode pads 21 and w 2 of which, when the width of the junction region 21a of the solder 5 and w 1, a w 1 ⁇ w 2, the electrode pads (electrode lands) 21, an opening portion 4 joined Since the roughened surface region 21b always exists around the region 21a, even if the solder 5 melts and expands, it does not flow out between the resin layer 6 and the electrode pad 21.
  • the manufacturing method of the component built-in module 1 of the present embodiment is different from the manufacturing method of the first embodiment in that the opening 4 is formed by a photoresist treatment of the metal foil 2. Subsequent steps (steps after the printing step in FIG. 2C) are the same as those in the manufacturing method of the first embodiment. Therefore, a process for forming the opening 4 will be described.
  • FIGS. 5A to 5E show a process of forming the opening 4.
  • the sheet-like metal foil 2 is prepared by the metal foil preparation process of FIG. 5A, and then, FIG. ), A photoresist film 7 is formed on the roughened surface of the metal foil 2 with a certain thickness.
  • the photoresist film 7 is patterned by the exposure / development process of FIG. 5C to remove the opening 4 of the photoresist film 7.
  • the opening 4 portion of the metal foil 2 from which the photoresist film 7 has been removed is chemically etched and processed into a surface with good solder wettability by soft etching. To do.
  • the photoresist film 7 is completely removed from the metal foil 2 to form the metal foil 2 in which the opening 4 is selectively processed into a wet surface with good solder wettability.
  • the component built-in module 1 is manufactured by performing the processes after the printing process of FIG.
  • the component built-in module 1 can be manufactured by forming the opening 4 in the metal foil 2 by the same photoresist processing as in the conventional manufacturing method.
  • a sheet-like metal foil 20 is prepared, and a plating layer 23 such as a chromium plating layer having poor solder wettability is formed on the upper surface thereof. Then, the surface-treated metal foil 22 corresponding to the metal foil 2 is formed as the metal film of the present invention. Instead of applying the plating layer 23, a layer having low solder wettability may be formed using a film resist.
  • an etching resist film is applied over the entire surface of the plating layer 23 of the metal foil 22, and then patterned by photolithography together with the opening 4 to form the etching resist film 30. Form.
  • the metal foil 22 is etched according to the resist film 30, and the plating layer 23 corresponding to the opening 4 of the metal foil 22 is removed, so that the solder wettability is improved. Process to a good surface.
  • solder paste is applied to the upper surface of the metal foil 22 by a solder application process of FIG. 6D corresponding to the printing process of FIG. Solder is printed so as to have an area larger than the area of the portion 4, and the solder 5 is applied to the opening 4 to a predetermined thickness.
  • processing after the component mounting step of FIG. 2D is executed using the metal foil 22 to form a component built-in module similar to the component built-in module 1.
  • the plating layer 23 has an effective plating thickness of about 0.5 to 5 ⁇ m, and most preferably about 0.5 to 1 ⁇ m.
  • the present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the gist thereof.
  • the metal foil 2 has at least one surface.
  • various metal foils having a roughened surface may be used, and the thickness thereof may be appropriately set.
  • the metal film of this invention is not restricted to metal foil, For example, a conductive resin film, a metal paste film, a vapor deposition film, etc. may be sufficient.
  • the conductive bonding material of the present invention is not limited to solder, and may be, for example, a conductive resin paste, a metallic paste, or the like.
  • the electrode peripheral surface that is, the external electrode of the part 3 is connected to the side surface and the upper surface of the part body.
  • the portion other than the portion facing the opening 4 may be a surface having poor wettability with respect to the conductive bonding material (corresponding to claim 6). If it does in this way, it can prevent that electroconductive joining materials, such as a solder melted by heating, raise and adhere to the electrode surrounding surface of components unnecessarily.
  • the component 3 will be described as an example.
  • a solder resist film may be formed on the entire peripheral surface of the electrode 31, or the wettability may be reduced. This can be realized by applying a bad plating film or increasing the surface roughness Ra.
  • the area of the opening 4 may be set in any way as long as it is equal to or smaller than the electrode area on the mounting surface side of the electrode 31 of the component 3 and does not impair the electrical characteristics.
  • the planar shape of the opening 4 may be various shapes such as a circle and a rectangle.
  • the application amount of the solder 5 and the like may be set appropriately based on experiments and the like.
  • the resin of the resin layer 6 may not contain a filler, or may be a photocurable resin or the like.
  • the present invention can be applied to a method of manufacturing a component built-in module in which a component such as a chip component is mounted on a metal film and sealed with a resin.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)

Abstract

Selon l'invention, du fait de l'amélioration des caractéristiques de scellement à la résine de module à composant intégré destinée à éviter les défauts de remplissage à la résine, les défaillances par court-circuit (telle que les bavures de brasure) après fabrication, suite à un défaut de remplissage à la résine d'un module à composant intégré sont évitées. Des parties ouverture (4) correspondant à la position de montage d'un composant sur une feuille métallique (2) sont formées sur de petites superficies prédéterminées qui sont plus petites que la superficie des électrodes du côté surface de montage des électrodes du composant (3) à monter. Des brasures (5) sont appliquées sur les parties ouverture (4). Il y a chauffage et fusion des brasures (5) par refusion dans un état dans lequel les électrodes (31) du composant (3) repose sur les brasures (5). Afin que les brasures (5) en fusion s'accumulent du fait de la tension de surface, le composant (3) est soudé et monté sur les brasures (5) dans un état surélevé par rapport aux brasures (5). Côté inférieur du composant (3), un large espace est formé. Puis, après montage du composant (3), la résine remplit de façon sûre, y compris l'espace côté inférieur du composant (3), et durcit. Une couche de résine (6) de scellement se forme dans un état tel que l'espace côté inférieur du composant (3) disparaît. Les caractéristiques de scellement à la résine du module (1) à composant intégré ainsi fabriqué sont améliorées.
PCT/JP2010/004147 2009-06-22 2010-06-22 Module à composant intégré et procédé de fabrication de celui-ci WO2010150522A1 (fr)

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JP2009-147350 2009-06-22
JP2009207728 2009-09-09
JP2009-207728 2009-09-09

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JPWO2014118917A1 (ja) * 2013-01-30 2017-01-26 株式会社メイコー 部品内蔵基板の製造方法
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