WO2010092853A1 - Procédé de fabrication de boîtier à cadre - Google Patents

Procédé de fabrication de boîtier à cadre Download PDF

Info

Publication number
WO2010092853A1
WO2010092853A1 PCT/JP2010/050489 JP2010050489W WO2010092853A1 WO 2010092853 A1 WO2010092853 A1 WO 2010092853A1 JP 2010050489 W JP2010050489 W JP 2010050489W WO 2010092853 A1 WO2010092853 A1 WO 2010092853A1
Authority
WO
WIPO (PCT)
Prior art keywords
frame
mold
gate
cavity
manufacturing
Prior art date
Application number
PCT/JP2010/050489
Other languages
English (en)
Japanese (ja)
Inventor
孝二 言水
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Publication of WO2010092853A1 publication Critical patent/WO2010092853A1/fr

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • B29C45/14065—Positioning or centering articles in the mould
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0232—Lead-frames
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0231—Stems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00

Definitions

  • the present invention relates to a method for manufacturing a frame package on which a light emitting element is mounted.
  • Conventional frame packages for semiconductor laser devices generally include at least a frame composed of a main frame and a sub frame that are electrically insulated from each other.
  • the main frame and the sub frame are fixed to each other by the resin molding portion.
  • the main frame is a frame on which a semiconductor laser element is mounted and is electrically connected to one electrode of the semiconductor laser element via a bonding wire.
  • the sub-frame is a frame that is electrically connected to the other electrode of the semiconductor laser element via a bonding wire.
  • the above-described conventional frame package for a semiconductor laser device is manufactured through the following processes, for example.
  • a metal structure in which a plurality of frames each composed of a main frame and a sub frame are integrally connected is manufactured by pressing a metal thin plate.
  • a molding die for insert molding is prepared, and the resin molding part is molded using the molding die so that the main frame and the sub frame are fixed to each other by the resin molding part. To do. Thereafter, the molded products are individually separated. As a result, the conventional frame package for the semiconductor laser device is obtained.
  • the mold for insert molding includes a pair of molds arranged to face each other, and a cavity (a shape reflecting the shape of the resin molding portion) is formed by clamping the pair of molds. Space) is formed.
  • One of the pair of molds is provided with a gate for injecting molten resin to be a resin molding portion into the cavity.
  • the conventional frame package manufacturing method has a problem that it is difficult to reduce the thickness of the frame package.
  • the present invention has been made to solve the above-described problems, and an object of the present invention is to provide a method of manufacturing a frame package capable of reducing the thickness of the frame package (resin molding part).
  • a method of manufacturing a frame package includes at least a frame including a first frame and a second frame that are electrically insulated from each other. And a second frame having a structure in which the second frame is fixed to each other by a resin molded portion, and a light emitting element is mounted on the frame, wherein the first mold and the second mold are arranged to face each other.
  • a cavity is formed by clamping the first mold and the second mold, and a gate protruding into the cavity is provided at a predetermined portion facing the second mold of the first mold.
  • the frame is mounted on the molding die so that the step of preparing the molding die and the portion covered by the resin molding part of the frame are placed in the cavity.
  • a step of clamping by the molten resin serving as the resin molded portion is injected from the gate into the cavity, and a step of curing the molten resin in the cavity.
  • the gate inlet is disposed in a region that does not overlap with the frame in plan view, and the height of the outer edge surface of the gate inlet is A molding die whose position is substantially the same as the height position of the surface on the first die side of the frame is used.
  • the gate inlet is arranged in a region that does not overlap with the frame when seen in plan view.
  • the height position of the outer edge surface of the injection port of the gate is substantially the same as the height position of the surface on the first mold side of the frame, melting in the cavity
  • the depth of the cavity concave portion of the first mold can be made smaller than before without impairing the fluidity of the resin.
  • the thickness of the portion molded by the cavity recess of the first mold (the portion on the first mold side of the resin molding portion) can be made smaller than before, so that the frame package can be made thinner. Is possible.
  • the gate inlet at the time of mold release Even if a burr along the surface of the frame is generated, the burr protrudes from a height position substantially flush with the surface of the frame on the first mold side. For this reason, in addition to being able to reduce the thickness of the frame package, it is possible to suppress burrs from protruding outside the resin molded portion.
  • the outer edge surface of the gate inlet may be in contact with the surface of the frame on the first mold side, or the gate is poured on the surface of the frame on the first mold side.
  • the outer edge surface of the entrance may not be in contact.
  • the gate package has the same function as a presser pin (a pin for suppressing frame misalignment and twisting) installed in the molding die, so the frame package can be made thinner. It is possible to reduce the number of presser pins installed in the molding die.
  • a gate injection port is inserted into a gap between the first frame and the second frame when viewed in plan. Is preferably arranged. In this way, the gate inlet can be easily arranged in a region that does not overlap the frame when seen in a plan view.
  • the frame package can be easily reduced in thickness.
  • FIG. 3 is a plan view for explaining the shape of a resin molding portion of the frame package shown in FIG. 1 (a view when viewed from the side on which the light emitting element is mounted).
  • FIG. 2 is a plan view for explaining the shape of a resin molding portion of the frame package shown in FIG. 1 (a view when viewed from the back side opposite to the side on which the light emitting element is mounted).
  • FIG. 5 is a cross-sectional view taken along line 100-100 in FIGS. 3 and 4.
  • FIG. 8 is a plan view of a state where a resin molding portion is molded in a portion to be a frame shown in FIG.
  • FIG. 8 is a plan view of a state where a resin molding portion is molded in a portion to be a frame shown in FIG. 7 (a diagram when viewed from the back side opposite to the side on which the light emitting element is mounted).
  • a frame package 10 manufactured using the method for manufacturing a frame package according to the present embodiment is for electrically connecting a semiconductor laser element 11 and an external device (not shown) as shown in FIG.
  • the semiconductor laser element 11 mounted on the frame 1 is an example of the “light emitting element” in the present invention.
  • the semiconductor laser element 11 shown in FIG. 1 is attached to the submount 12 by the junction down method, and the submount 12 is fixed to the frame 1 to be mounted on the frame 1. Yes.
  • the semiconductor laser element 11 is a two-wavelength laser element, and the p-side electrode is separated into two and the n-side electrode is common.
  • the p-side electrode and the n-side electrode of the semiconductor laser element 11 are electrically connected to the frame 1 through bonding wires 13. Since the p-side electrode of the semiconductor laser element 11 is electrically connected to the electrode pad formed on the submount 12, the p-side electrode bonding wire 13 is bonded to the electrode pad of the submount 12. .
  • the frame 1 on which the semiconductor laser element 11 is mounted includes one main frame 2 and two sub frames 3 and 4, and these are electrically insulated from each other. It has a structure.
  • the frame 1 is made of a metal thin plate (thin plate made of copper, iron, or the like) and is excellent in thermal conductivity and conductivity.
  • the main frame 2 is an example of the “first frame” in the present invention
  • the sub-frames 3 and 4 are examples of the “second frame” in the present invention.
  • the main frame 2 is a frame on which the semiconductor laser element 11 is mounted and the n-side electrode of the semiconductor laser element 11 is electrically connected. That is, the main frame 2 has at least an element mounting portion 2a on which the semiconductor laser element 11 is mounted and an n-side electrode bonding wire 13 is bonded. A lead portion 2b connected to an external device is provided so as to extend integrally from the element mounting portion 2a of the main frame 2.
  • the sub-frame 3 is a frame to which the p-side electrode (electrode pad of the submount 12) of the semiconductor laser element 11 is electrically connected, and a wire connection portion to which a bonding wire 13 for the p-side electrode is bonded. 3a and a lead portion (a portion connected to an external device) 3b extending integrally from the wire connection portion 3a.
  • the subframe 4 also has a wire connection portion 4 a and a lead portion 4 b as in the subframe 3.
  • the resin molded portion 5 has a shape as shown in FIG. 3 in a plan view from the side on which the semiconductor laser element 11 is mounted (hereinafter referred to as the element mounting side). More specifically, the part on the element mounting side of the resin molding portion 5 surrounds the element mounting area and the area including the peripheral area from three directions when viewed in plan, and the semiconductor laser element 11 (see FIG. 1).
  • the light emitting side is substantially U-shaped open.
  • an opening 5 a that straddles the main frame 2 and the subframe 3 is formed in a portion on the back surface side of the resin molded portion 5. A part of the surface on the back side of each of the main frame 2 and the sub-frame 3 is exposed from the opening 5a.
  • a circular opening 5 b is formed in a portion on the back surface side of the resin molding portion 5 so as to expose a part of the surface on the back surface side of the sub-frame 4.
  • the total thickness T1 of the resin molded portion 5 is about 1.5 mm to about 1.6 mm, and the thickness T2 of the back side portion of the resin molded portion 5 is about 0.2 mm. . That is, the thickness of the portion on the back surface side of the resin molded portion 5 is smaller than that of the conventional one.
  • a metal structure 20 in which a plurality of frames 1 (the hatched portions in FIGS. 6 and 7) are integrally connected is manufactured.
  • Such a metal structure 20 can be obtained by, for example, pressing (punching) a metal thin plate such as a copper thin plate.
  • FIGS. 8 and 9 show a predetermined portion of the frame 1 when viewed from the element mounting side
  • FIG. 9 shows the planar shape of the resin molded portion 5 when viewed from the back side opposite to the element mounting side. is there.
  • the mold 31 is disposed on the back side opposite to the element mounting side, and the mold 32 is disposed on the element mounting side. Is.
  • the pair of molds 31 and 32 included in the molding mold 30 are examples of the “first mold” and the “second mold” of the present invention, respectively.
  • the structure of the molding die 30 used in the insert molding step is a cavity (resin molding part 5 (see FIGS. 8 and 9)) by clamping the pair of dies 31 and 32. 30a) is formed.
  • the space 30a is formed to reflect the shape of the above.
  • the mold 31 of the pair of molds 31 and 32 is provided with a gate 31a for injecting molten resin to be the resin molding portion 5 into the cavity 30a.
  • the gate 31a is formed on the cavity surface of the mold 31 opposite to the cavity surface of the other mold 32 (the bottom surface of the cavity recess formed in the other mold 32). Provided in a predetermined portion of the bottom surface) and protrudes into the cavity 30a.
  • the gate 31a provided in the mold 31 is a region 20a in which the injection port 31b of the gate 31a does not overlap the frame 1 when viewed in plan when the molding die 30 to which the frame 1 is attached is clamped. That is, it is formed so as to be in the gap between the main frame 2 and the sub-frame 3 when seen in a plan view.
  • the protruding height of the gate 31a is such that when the molding die 30 to which the frame 1 is attached is clamped, the outer edge surface 31c of the injection port 31b of the gate 31a is different from the surface of the frame 1 on the die 31 side.
  • the height position of the outer edge surface 31c of the inlet 31b of the gate 31a is set to be substantially the same as the height position of the surface of the frame 1 on the mold 31 side.
  • cross-sectional view of the molding die 30 shown in FIG. 10 represents the shape of the cavity 30a for resin molding of the cross-sectional portion along the line 200-200 in FIGS.
  • the injection port 31b of the gate 31a is disposed in the gap between the main frame 2 and the sub frame 3 when viewed in plan. Further, the outer edge surface 31c of the inlet 31b of the gate 31a is in contact with a part of the surface of the main frame 2 and the sub frame 3 on the mold 31 side. That is, a part of the surface on the mold 31 side of each of the main frame 2 and the sub frame 3 is pressed by the outer edge surface 31c of the inlet 31b of the gate 31a, and the main frame 2 and the sub frame 3 are held. .
  • the main frame 2 and the sub-frame are constituted by the gate 31a and a predetermined portion (a portion on which each of the main frame 2 and the sub-frame 3 is placed) facing the gate 31a.
  • the frame 3 is clamped.
  • a part of the surface of the sub frame 4 on the mold 31 side is held by a pressing pin (not shown).
  • molten resin to be the resin molding portion 5 (see FIGS. 8 and 9) is injected from the gate 31a into the cavity 30a (in the direction of the arrow in FIG. 11). At this time, the molten resin flowing in the cavity 30 a is filled over the entire area of the cavity 30 a without being blocked by the frame 1. Then, after the molten resin is filled over the entire area in the cavity 30a, the molten resin filled in the cavity 30a is cured. Thereby, as shown in FIG. 12, the main frame 2 and the sub-frames 3 and 4 are fixed to each other by the resin molding portion 5.
  • release is performed and the molded product is taken out.
  • a burr 5c is generated along the injection port 31b of the gate 31a.
  • the burr 5c protrudes from a height position substantially flush with the surface of the frame 1 on the mold 31 side.
  • the outer edge surface 31c of the injection port 31b of the gate 31a presses and holds a part of the surface of each of the main frame 2 and the sub frame 3 on the mold 31 side, molding is performed from the back side opposite to the element mounting side.
  • a part of the surface of each of the main frame 2 and the sub-frame 3 (the portion that is pressed and held by the outer edge surface 31c of the inlet 31b of the gate 31a (see FIG. 11)). Will be exposed. That is, the opening 5a is formed in the portion on the back surface side of the resin molding portion 5, and a part of the surface on the back surface side of each of the main frame 2 and the sub frame 3 is exposed from the opening 5a.
  • another opening 5b formed in the portion on the back surface side of the resin molding portion 5 is formed by pressing and holding a part of the surface on the back surface side of the sub frame 4 by a pressing pin (not shown). Is. Therefore, a part of the surface on the back surface side of the sub-frame 4 is exposed from the opening 5 b of the resin molding portion 5.
  • the frame package 10 shown in FIG. 1 is manufactured by separating the molded products individually.
  • the gate 31a is placed in the region 20a that does not overlap the frame 1 when viewed in plan.
  • the molding die 30 in which the injection port 31b is disposed and the outer edge surface 31c of the injection port 31b of the gate 31a is in contact with a part of the surface of the frame 1 on the mold 31 side.
  • the depth of the cavity recess of the mold 31 can be made smaller than before without impairing the fluidity of the molten resin in the cavity 30a.
  • the thickness of the part molded by the cavity recess of the mold 31 (the part on the back side of the resin molding part 5) can be made smaller than before, so that the frame package 10 can be made thinner. It becomes.
  • the outer edge surface 31c of the inlet 31b of the gate 31a is used to A part of the surface on the mold 31 side is pressed and held, so that it is the same as a presser pin (a pin for suppressing misalignment or twisting of the frame 1) installed in the molding die 30. Since the gate 31a has the function, the number of presser pins installed in the molding die 30 can be reduced while reducing the thickness of the frame package 10.
  • the frame package manufacturing method of the present embodiment when the frame 1 is mounted on the molding die 30 and clamped, the main frame 2 and the sub frame 3 are viewed in plan view.
  • the injection port 31b of the gate 31a By arranging the injection port 31b of the gate 31a in the gap between them, the injection port 31b of the gate 31a can be easily arranged in a region that does not overlap with the frame 1 in plan view. it can.
  • the main frame is arranged between the two sub-frames.
  • the present invention is not limited to this, and the arrangement position of each frame can be changed as appropriate. That is, when there is one main frame and two sub frames, one of the two sub frames may be arranged in the center.
  • the structure includes one main frame and two subframes.
  • the present invention is not limited to this, and the number of frames can be changed as appropriate.
  • a structure including one main frame and three sub frames may be used, and the sub frames may be arranged in the order of “sub frame, sub frame, main frame, sub frame”.
  • the outer edge surface of the gate inlet may be brought into contact with the two subframes. In this way, it is possible to reduce the pressing pin for the sub frame.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

L'invention porte sur un procédé de fabrication de boîtier à cadre capable de réaliser une réduction d'épaisseur. Le procédé de fabrication de boîtier à cadre utilise des coques de moulage (30) faites de telle façon que, vu en vue plane, un orifice d'injection (31b) d'une entrée (31a) est agencé dans une zone (20a) qui ne chevauche pas un cadre (1), et la position en hauteur de la surface de bord extérieur (31c) dudit orifice d'injection (31b) est presque la même que la position en hauteur du côté du cadre (1) proche de la coque (31) lorsque les coques sont serrées.
PCT/JP2010/050489 2009-02-10 2010-01-18 Procédé de fabrication de boîtier à cadre WO2010092853A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-028589 2009-02-10
JP2009028589 2009-02-10

Publications (1)

Publication Number Publication Date
WO2010092853A1 true WO2010092853A1 (fr) 2010-08-19

Family

ID=42561700

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2010/050489 WO2010092853A1 (fr) 2009-02-10 2010-01-18 Procédé de fabrication de boîtier à cadre

Country Status (1)

Country Link
WO (1) WO2010092853A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103358467A (zh) * 2012-04-06 2013-10-23 矽品精密工业股份有限公司 用于封装半导体组件的铸模装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6333916U (fr) * 1986-08-21 1988-03-04
JP2002043679A (ja) * 2000-07-28 2002-02-08 Sanyo Electric Co Ltd 半導体レーザ装置
JP2002086487A (ja) * 2000-09-14 2002-03-26 Teikoku Tsushin Kogyo Co Ltd 基板の電極パターンへのモールド樹脂による端子板接続固定方法及び端子板付き電子部品
JP2002223003A (ja) * 2001-01-26 2002-08-09 Nichia Chem Ind Ltd パッケージ成形体とその製造方法及び発光装置
JP2004363537A (ja) * 2002-09-05 2004-12-24 Nichia Chem Ind Ltd 半導体装置およびその製造方法、並びにその半導体装置を用いた光学装置
WO2005039000A1 (fr) * 2003-10-15 2005-04-28 Sanyo Electric Co., Ltd Appareil laser a semiconducteur
JP2005539386A (ja) * 2002-09-17 2005-12-22 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング リードフレームをベースとしたハウジング、表面実装可能な光電構成素子及び製造法
JP2008254275A (ja) * 2007-04-03 2008-10-23 Matsushita Electric Ind Co Ltd 射出成形品と射出成形方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6333916U (fr) * 1986-08-21 1988-03-04
JP2002043679A (ja) * 2000-07-28 2002-02-08 Sanyo Electric Co Ltd 半導体レーザ装置
JP2002086487A (ja) * 2000-09-14 2002-03-26 Teikoku Tsushin Kogyo Co Ltd 基板の電極パターンへのモールド樹脂による端子板接続固定方法及び端子板付き電子部品
JP2002223003A (ja) * 2001-01-26 2002-08-09 Nichia Chem Ind Ltd パッケージ成形体とその製造方法及び発光装置
JP2004363537A (ja) * 2002-09-05 2004-12-24 Nichia Chem Ind Ltd 半導体装置およびその製造方法、並びにその半導体装置を用いた光学装置
JP2005539386A (ja) * 2002-09-17 2005-12-22 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング リードフレームをベースとしたハウジング、表面実装可能な光電構成素子及び製造法
WO2005039000A1 (fr) * 2003-10-15 2005-04-28 Sanyo Electric Co., Ltd Appareil laser a semiconducteur
JP2008254275A (ja) * 2007-04-03 2008-10-23 Matsushita Electric Ind Co Ltd 射出成形品と射出成形方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103358467A (zh) * 2012-04-06 2013-10-23 矽品精密工业股份有限公司 用于封装半导体组件的铸模装置

Similar Documents

Publication Publication Date Title
JP4422094B2 (ja) 半導体装置
US20080290484A1 (en) Leadframe Strip and Mold Apparatus for an Electronic Component and Method of Encapsulating an Electronic Component
JP5004601B2 (ja) パッケージ部品の製造方法および半導体装置の製造方法
JP3854957B2 (ja) 半導体装置の製造方法および半導体装置
JP6603982B2 (ja) リードフレーム、樹脂付きリードフレーム、樹脂パッケージ、発光装置及び樹脂パッケージの製造方法
JP5246662B2 (ja) 半導体装置用パッケージおよびその製造方法
CN105655318B (zh) 半导体装置及其制造方法
US20120001310A1 (en) Package for semiconductor device, and method of manufacturing the same and semiconductor device
US5370517A (en) Apparatus for assembling and resin-encapsulating a heat sink-mounted semiconductor power device
JP6357415B2 (ja) 半導体装置の製造方法
KR20140032889A (ko) 반도체 장치의 제조 방법 및 반도체 장치
JP5554691B2 (ja) Ｌｅｄチップ実装用基板の金型、及び、ｌｅｄチップ実装用基板の製造方法
JP5598189B2 (ja) 半導体装置の製造方法
JP5136458B2 (ja) 半導体パッケージ及びその製造方法
KR20190053783A (ko) 수지 봉지 금형 및 반도체 장치의 제조 방법
KR100591718B1 (ko) 수지-밀봉형 반도체 장치
WO2010092853A1 (fr) Procédé de fabrication de boîtier à cadre
KR20200007688A (ko) 수지 봉지 금형 및 반도체 장치의 제조 방법
US20090051017A1 (en) Lead Frame with Non-Conductive Connective Bar
JP2011238963A (ja) パッケージ部品の製造方法
CN110164843A (zh) 引线框、带有树脂的引线框、带有树脂的引线框的制造方法以及半导体装置的制造方法
JP2012221963A (ja) Ｌｅｄパッケージ用基板
JP2013125834A (ja) モールド金型、半導体装置、および樹脂成形品
JP2017152496A (ja) リードフレーム、及び半導体パッケージの製造方法
WO2010098156A1 (fr) Dispositif électroluminescent de type à boîtier à cadre et procédé de fabrication associé

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10741133

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10741133

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP