WO2010082606A1 - 静電チャックおよび静電チャックの製造方法 - Google Patents

静電チャックおよび静電チャックの製造方法 Download PDF

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Publication number
WO2010082606A1
WO2010082606A1 PCT/JP2010/050353 JP2010050353W WO2010082606A1 WO 2010082606 A1 WO2010082606 A1 WO 2010082606A1 JP 2010050353 W JP2010050353 W JP 2010050353W WO 2010082606 A1 WO2010082606 A1 WO 2010082606A1
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WIPO (PCT)
Prior art keywords
electrostatic chuck
resin
protrusion
covering portion
flat
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Application number
PCT/JP2010/050353
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English (en)
French (fr)
Japanese (ja)
Inventor
裕明 堀
健志 内村
宏樹 松井
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Toto株式会社
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Publication of WO2010082606A1 publication Critical patent/WO2010082606A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Definitions

  • An aspect of the present invention generally relates to an electrostatic chuck.
  • Electrostatic chucks are used as a means to attract and hold semiconductor wafers and glass substrates, etc., to be processed in substrate processing equipment that performs etching, CVD (Chemical Vapor Deposition), sputtering, ion implantation, ashing, exposure, inspection, etc. ing.
  • Electrostatic chucks include a Coulomb electrostatic chuck that generates a Coulomb force to attract a workpiece, and a Johnsen-Rabeck electrostatic chuck that generates a strong adsorption force by generating a Johnsen-Rabeck force.
  • a Coulomb electrostatic chuck that generates a Coulomb force to attract a workpiece
  • Johnsen-Rabeck electrostatic chuck that generates a strong adsorption force by generating a Johnsen-Rabeck force.
  • the aspect of the present invention has been made based on recognition of such a problem, can suppress the occurrence of particle contamination, has a good detachment response of an object to be processed, and is placed on the mounting surface portion of the electrostatic chuck.
  • an electrostatic chuck and a manufacturing method of the electrostatic chuck having high peeling durability of a formed covering portion are provided.
  • a dielectric substrate having a protrusion formed on a main surface on a side on which a workpiece is placed, a flat surface formed around the protrusion, and the protrusion And a covering portion formed so as to cover the flat portion, and at least a part of the flat portion is provided with a region where the covering portion is not formed.
  • An electrostatic chuck is provided.
  • the main surface of the dielectric substrate opposite to the main surface provided with the electrodes is polished, a mask having a desired shape is provided on the main surface, and the sandblast method is performed. And removing a portion that is not covered by the mask to form a plane portion and a projection portion, and covering the projection portion and the plane portion with resin so as to cover the projection portion.
  • the top surface of the protrusion was coated such that the arithmetic average height of the surface of the resin coated on the top surface was smaller than the arithmetic average height of the surface of the resin coated on the top surface of the flat portion.
  • the surface of the resin is polished, a part of the resin covered on the upper surface of the flat part is cut, and the cut part is removed to form a covering part.
  • a method for manufacturing a chuck is provided.
  • the occurrence of particle contamination can be suppressed, the detachment response of the object to be processed is good, and the peeling durability of the covering portion formed on the mounting surface portion of the electrostatic chuck is high.
  • An electrostatic chuck and a method for manufacturing the electrostatic chuck are provided.
  • FIG. 1A is a schematic cross-sectional view for illustrating an electrostatic chuck
  • FIG. 1B is a schematic enlarged view of a portion B in FIG. It is a schematic cross section for illustrating the range where a plane part is covered with a covering part.
  • It is a flowchart for illustrating the manufacturing method of an electrostatic chuck.
  • 4A is a schematic cross-sectional view for illustrating the electrostatic chuck 1a
  • FIG. 4B is a schematic enlarged view of a portion C in FIG. 4A
  • 5 is a flowchart for illustrating a specific example of a method for manufacturing the electrostatic chuck shown in FIG. 4.
  • An embodiment of the first invention includes a dielectric substrate having a protrusion formed on a main surface on a side on which a workpiece is placed, a flat surface formed around the protrusion, and the protrusion And a covering portion formed so as to cover the flat portion, and at least a part of the flat portion is provided with a region where the covering portion is not formed.
  • It is an electrostatic chuck characterized by being formed. According to this electrostatic chuck, the occurrence of particle contamination can be suppressed. Further, it is possible to improve the detachment response of the object to be processed and the peeling durability of the covering portion formed on the mounting surface portion of the electrostatic chuck.
  • the covering portion is separated from the protrusion from a position where the side surface of the protrusion intersects the flat surface on the flat surface.
  • the electrostatic chuck is characterized in that it is formed in a range of not less than the thickness dimension of the covering portion and not more than 3 mm in a direction to be applied. According to this electrostatic chuck, it is possible to further suppress particle contamination, improve the detachment response of the object to be processed, and improve the peeling durability of the covering portion.
  • the volume resistivity of the dielectric substrate in the use temperature region of the electrostatic chuck is 10 9 ⁇ cm or more and 10 11 ⁇ cm or less. It is an electrostatic chuck characterized by being. According to this electrostatic chuck, it is possible to improve the adsorption / desorption response of the workpiece without increasing the current value of the adsorption voltage.
  • An embodiment of the fourth invention is the embodiment of any one of the first to third inventions, wherein the volume resistivity at 25 ° C. of the covering portion is 10 14 ⁇ cm or more and 10 18 ⁇ cm or less.
  • This is an electrostatic chuck. According to this electrostatic chuck, it is possible to improve the detachment response of the object to be processed. In addition, a general and economical resin production method can be used.
  • An embodiment of the fifth invention is an electrostatic chuck according to any one of the first to fourth inventions, wherein the covering portion includes a polyimide resin. According to this electrostatic chuck, it is possible to have a coating portion that has excellent corrosion resistance and excellent coating characteristics.
  • An embodiment of a sixth invention is the electrostatic chuck according to any one of the first to fifth inventions, wherein the covering portion is formed using a vapor deposition polymerization method. It is. According to this electrostatic chuck, it is possible to have a coating portion with excellent coating characteristics.
  • the contact area ratio between the surface of the covering portion and the object to be processed at the top surface of the protrusion is 0.
  • the electrostatic chuck is characterized by being 0.005% or more and 1.5% or less. According to this electrostatic chuck, it is possible to suppress particle contamination and improve the detachment response of the object to be processed. In addition, the formation of the protrusion can be facilitated.
  • a main surface opposite to a main surface provided with electrodes of a dielectric substrate is polished, a mask having a desired shape is provided on the main surface, and the mask is formed using a sand blast method.
  • a flat portion is formed by removing a portion that is not covered by the projection, and a projection is formed.
  • the resin is covered so as to cover the projection and the plane, and the top surface of the projection is covered.
  • An embodiment of the ninth invention is the method of manufacturing an electrostatic chuck according to the embodiment of the eighth invention, wherein the resin is coated using a vapor deposition polymerization method. According to this method for manufacturing an electrostatic chuck, it is possible to coat a resin with excellent coating characteristics.
  • An tenth aspect of the present invention is the electrostatic chuck according to the eighth or ninth aspect, wherein the resin is cut using a laser processing method or a water jet processing method. It is a manufacturing method. According to this method for manufacturing an electrostatic chuck, the occurrence of burrs and burrs can be suppressed when the resin is cut.
  • FIG. 1 is a schematic cross-sectional view for illustrating an electrostatic chuck according to an embodiment of the present invention.
  • 1A is a schematic cross-sectional view for illustrating an electrostatic chuck
  • FIG. 1B is a schematic enlarged view of a portion B in FIG. 1A.
  • the electrostatic chuck 1 is provided with a base 2, a dielectric substrate 3, and an electrode 4.
  • An insulator layer 5 made of an inorganic material is formed on one main surface (surface on the electrode 4 side) of the base 2.
  • the dielectric substrate 3 has a protrusion 3a formed on the main surface on the side where the object to be processed is placed, and a flat surface 3b formed around the protrusion 3a.
  • the covering portion 7 is formed so as to cover the protruding portion 3a and the flat portion 3b formed in the periphery thereof. Moreover, the coating
  • the portion covered with the covering portion 7 is limited to a necessary range, the amount of remaining charge can be suppressed. That is, the cover 3 is formed so as to cover a predetermined range of the flat surface portion 3b around the protrusion 3a that is a portion that rubs against the object to be processed and the protrusion 3a. Therefore, a portion where the covering portion 7 is not formed is provided between the adjacent protrusions 3b, and the amount of remaining charge can be reduced by the portion where the covering portion 7 is not formed. As a result, it is possible to improve the detachment response of the object to be processed and to obtain a stable adsorption force.
  • the covering portion 7 is formed so as to cover only the top surface of the protruding portion 3a.
  • peeling of the covering portion 7 tends to progress, and a new problem arises that burrs and burrs are generated on the mounting surface.
  • the covering portion 7 when the covering portion 7 is partially formed, the flat portion 3b is covered with the protrusion 3a together with the resin, and unnecessary portions are peeled off except for necessary portions.
  • the unnecessary portion when the unnecessary portion is peeled off, the end portion of the covering portion 7 may be pulled in the peeling direction to cause minute peeling. Then, when an external force is applied in the peeling direction to the part where such peeling occurs, the peeling easily progresses.
  • the portion to which an external force is applied can be separated from the end portion of the covering portion 7 that is likely to be peeled due to manufacturing, and thus the force applied in the peeling direction at the end portion of the covering portion 7 is suppressed. Can do. Therefore, progress of peeling can be suppressed. That is, since the covering portion 7 is formed so as to cover the protruding portion 3a and the surrounding flat portion 3b, the top surface of the protruding portion 3a to which an external force is applied to the end portion of the covering portion 7 that is likely to be peeled off in manufacturing. Can be separated from the vicinity.
  • burrs and burrs directed in the peeling direction may occur at the boundary with the part to be peeled when peeling the resin of the unnecessary part, that is, at the end of the covering part 7.
  • burrs and burrs are generated on the surface on which the object to be processed is placed, there is a risk that the surface on the object to be processed will be damaged and the number of particles will increase.
  • the present embodiment it is possible to provide the end portion of the covering portion 7 that may generate burrs and burrs in the manufacturing process at a position separated from the surface on which the workpiece is placed. For this reason, even if burrs or burrs are generated at the end of the covering portion 7, it is possible to prevent the burrs or burrs from touching the surface on which the workpiece is placed. As a result, it is possible to suppress damage to the surface on the placement side of the object to be processed and increase in the number of particles.
  • FIG. 2 is a schematic cross-sectional view for illustrating a range in which the flat portion is covered by the covering portion.
  • FIG. 2 shows a case where the shape of the protrusion 3a is substantially a truncated cone.
  • Table 1 is a table for illustrating the evaluation results for the release response after long-time adsorption.
  • the evaluation of the release responsiveness of the object to be processed after long-time adsorption is performed by continuously preloading the object to be processed with a force of 100 gf after the continuous adsorption for 3 hours, turning off the applied voltage, Judgment is made based on whether or not it can be withdrawn within 3 seconds. In this case, it is indicated as “ ⁇ ” when it is detached and “X” when it is not.
  • the range in which the flat surface portion 3b is covered with the covering portion 7 (covering portion width L) is covered when the position 3d where the side surface of the protruding portion 3a and the flat surface portion 3b intersect is a reference. It is preferable to set the thickness of the portion 7 to 3 mm or less. That is, the covering portion 7 is formed on the flat surface portion 3b in a range from the thickness dimension of the covering portion 7 to 3 mm or less in a direction away from the protruding portion 3a from the position where the side surface of the protruding portion 3a intersects the flat surface portion 3b. It is preferable to do so.
  • the covering portion width L is less than the thickness dimension of the covering portion 7, it is difficult to form a portion covering the flat portion 3b, and the peeling durability of the covering portion 7 formed on the protruding portion 3a may be reduced. Because there is. Further, if the thickness exceeds 3 mm, the adsorption force due to the residual charge becomes too large, so that the detachment response of the object to be processed may be deteriorated as shown in Table 1.
  • the covering portion covering ratio obtained by dividing the area of the covering portion 7 by the area of the object to be processed is preferably more than 0% and not more than 40%. In this case, it is more preferable to exceed 0% and not more than 30%. Moreover, it is more preferable to exceed 0% and not more than 25%.
  • 0% that is, when the covering portion 7 is not formed, charges are accumulated in the object to be processed, and the detachment response may be deteriorated. Further, if it exceeds 40%, the amount of electric charge remaining in the covering portion 7 becomes too large, so that the detachment response of the object to be processed may be deteriorated.
  • the covering portion covering ratio is low. Therefore, it is preferably 30% or less, and more preferably 25% or less.
  • the main surface of the dielectric substrate 3 provided with the electrode 4 and the main surface of the base 2 provided with the insulator layer 5 are bonded with an insulating adhesive.
  • the bonding layer 6 is obtained by curing the insulating adhesive.
  • the electrode 4 and the power source 10a and the power source 10b are connected by an electric wire 9.
  • the electric wire 9 is provided so that the base 2 may be penetrated, the electric wire 9 and the base 2 are insulated.
  • An example illustrated in FIG. 1 is a so-called bipolar electrostatic chuck in which a positive electrode and a negative electrode are formed on a dielectric substrate 3 so as to be adjacent to each other.
  • the present invention is not limited to this, and may be a so-called monopolar electrostatic chuck in which one electrode is formed on the dielectric substrate 3, or a tripolar type or other multipolar type. . Further, the number and arrangement of the electrodes can be changed as appropriate.
  • a through hole 11 is provided so as to penetrate the electrostatic chuck 1.
  • One end of the through hole 11 is open to the flat portion 3b, and the other end is connected to a gas supply means (not shown) via a pressure control means and a flow rate control means (not shown).
  • the through-hole 11 is opened on the upper surface of the coating
  • a gas supply means (not shown) supplies helium gas or argon gas.
  • the space 3c provided by forming the protrusion part 3a becomes a passage of the supplied gas. Further, the spaces 3c communicate with each other, and the supplied gas spreads throughout.
  • a ring-shaped protrusion (not shown) is disposed around the outer peripheral portion of the surface on which the object to be processed such as a semiconductor wafer is placed and the through holes other than the through holes 11 for supplying the gas. Can also be prevented from leaking.
  • the covering portion 7 can be formed in the same manner as the protrusion 3a. That is, it is possible to cover the predetermined range of the side surface, the top surface, and the flat surface portion 3b around the ring-shaped projection portion (not shown) with the covering portion 7.
  • the gas distribution speed can be increased by providing a gas distribution groove (concave groove) (not shown) that is provided radially and concentrically on the flat surface portion 3 b and communicates with the through hole 11. Then, a predetermined range of the side surface and bottom surface of the gas distribution groove and the flat surface portion 3b around the gas distribution groove can be covered with the covering portion 7.
  • a gas distribution groove concave groove
  • the base 2 can be formed of a metal having a high thermal conductivity such as an aluminum alloy or copper.
  • the flow path 8 through which a cooling liquid or a heating liquid flows can be provided in the inside.
  • the flow path 8 is not necessarily required, it is preferable that it is provided from the viewpoint of temperature control of the object to be processed.
  • the insulator layer 5 provided on one main surface of the base 2 can be formed of a polycrystalline material such as alumina (Al 2 O 3 ) or yttria (Y 2 O 3 ).
  • the insulator layer 5 preferably has a higher thermal conductivity than the bonding layer 6, and more preferably has a thermal conductivity of 2 W / mK or more. By doing so, the heat transfer property becomes better than the case of the bonding layer alone, and the temperature controllability of the object to be processed and the uniformity of the in-plane temperature can be further improved.
  • the thermal conductivity of the bonding layer 6 is preferably 1 W / mK or more, and more preferably 1.6 W / mK or more.
  • Such thermal conductivity can be obtained, for example, by adding alumina or aluminum nitride as a filler to a silicone resin or the like.
  • thermal conductivity can also be adjusted with the ratio of addition.
  • the thickness of the bonding layer 6 is preferably as thin as possible in consideration of heat transfer properties. On the other hand, considering that the bonding layer 6 is peeled off due to thermal shear stress caused by the difference in thermal expansion coefficient between the base 2 and the dielectric substrate 3, the thickness of the bonding layer 6 should be as thick as possible. preferable. Therefore, the thickness of the bonding layer 6 is preferably set to 0.1 mm or more and 0.3 mm or less in consideration of these.
  • the dielectric substrate 3 various materials can be used according to various requirements required for the electrostatic chuck. In this case, considering the thermal conductivity and the reliability of electrical insulation, it is preferable to use a ceramic sintered body.
  • the ceramic sintered body include alumina, yttria, aluminum nitride, silicon carbide and the like.
  • the volume resistivity of the material of the dielectric substrate 3 is preferably 10 8 ⁇ cm or more in the operating temperature range. In this case, it is more preferable that the volume resistivity is 10 9 ⁇ cm or more and 10 11 ⁇ cm or less in the operating temperature range. This is because if it is less than 10 9 ⁇ cm, the current value of the applied voltage becomes too large. Further, if it exceeds 10 11 ⁇ cm, the release response may be deteriorated.
  • the dielectric substrate 3 is preferably a ceramic sintered body having an average particle diameter of 2 ⁇ m or less. If a ceramic sintered body having an average particle diameter of 2 ⁇ m or less is used, even if a part of the covering portion 7 is eroded or peeled off, it is possible to suppress the occurrence of large-sized degranulation. Because it can.
  • the thickness of the dielectric substrate 3 is required for use in a practical voltage range ( ⁇ 500 V to ⁇ 2000 V). Is preferably 1.5 mm or less. In consideration of ease of manufacture, the thickness of the dielectric substrate 3 is preferably 0.2 mm or more (more preferably 0.3 mm or more).
  • coated part 7 is 0.5 mm or more and 2.0 mm or less. By setting it as such thickness, the electrical insulation between a to-be-processed object and an electrode is securable. In addition, an electrostatic chuck having good heat transfer from the workpiece to the base can be obtained.
  • Examples of the material of the electrode 4 include titanium oxide, titanium alone or a mixture of titanium and titanium oxide, titanium nitride, titanium carbide, tungsten, gold, silver, copper, aluminum, chromium, nickel, and gold-platinum. Can do.
  • the material, the volume resistivity, the thickness dimension and its variation, the arithmetic average height, etc. of the covering portion 7 have a great influence on the corrosion resistance, the occurrence of particle contamination, the detachment response, and the like. Therefore, it is important to keep the volume resistivity, thickness dimension, variation, arithmetic average height, and the like of the covering portion 7 within a predetermined range.
  • the knowledge obtained by the inventor regarding the covering portion 7 will be described.
  • the material of the covering portion 7 is preferably a resin having corrosion resistance such as polyimide resin or fluororesin.
  • a polyimide resin is more preferable because it is excellent in corrosion resistance and can be formed into a film having excellent coating properties by a vapor deposition polymerization method described later.
  • at least a polyimide resin may be included.
  • the volume resistivity at 25 ° C. of the covering portion 7 is preferably 10 14 ⁇ cm or more and 10 18 ⁇ cm or less. If it is less than 10 14 ⁇ cm, current flows to the object to be processed through the covering portion 7, so that the Johnsen-Rahbek force increases, the residual adsorption force increases, and the detachment response may deteriorate. Moreover, it is because it becomes unnecessary to select a special material and a manufacturing method by setting it as 10 ⁇ 18 > ohm-cm or less, and it becomes possible to select a general and economical polyimide manufacturing method.
  • the thickness dimension of the covering portion 7 is preferably 2 ⁇ m or more and 15 ⁇ m or less.
  • the surface shape of the base layer is transferred to the surface of the covering portion 7 formed thereon, and the thickness of the covering portion 7 is more easily affected by the reduction in thickness. For this reason, if the thickness is less than 2 ⁇ m, the influence of the base is greatly affected, and it may be difficult to reduce the arithmetic average height in the polishing process (finishing process) after film formation. Moreover, it is because there exists a possibility that film
  • the variation in the thickness dimension of the covering portion 7 is preferably ⁇ 10% or less. This is because if it exceeds ⁇ 10%, the dispersion of the adsorption force becomes large and the in-plane distribution of the adsorption force becomes too large.
  • Such uniform film formation can be performed, for example, by vapor deposition polymerization or CVD (Chemical Vapor Deposition).
  • the arithmetic average height of the surface of the covering portion 7 (contact surface with the object to be processed) formed on the top surface of the protrusion 3a is smaller than the arithmetic average height of the surface of the covering portion 7 formed on the flat surface portion 3b. It has become.
  • the arithmetic average height Ra of the surface of the covering portion 7 formed on the top surface of the protruding portion 3a is preferably 0.01 ⁇ m or more and 0.1 ⁇ m or less. This is because if the thickness is less than 0.01 ⁇ m, the time required for polishing (finishing) becomes longer and the productivity is remarkably reduced. On the other hand, if it exceeds 0.1 ⁇ m, a chip pocket may be formed in this portion.
  • the “arithmetic average height Ra” in the present specification is based on “JIS B0601: 2001”.
  • the arithmetic average height Ra of the surface of the covering portion 7 formed on the flat portion 3b is 1 ⁇ m or less. If the thickness exceeds 1 ⁇ m, fine particles generated when the covering portion 7 formed on the top surface of the protrusion 3a is polished may enter the chip pocket formed in this portion. This is because there is a possibility that particle contamination is caused by the later release of the particles.
  • the cross section in the direction substantially parallel to the flat surface portion 3b of the protruding portion 3a can be an arbitrary shape. However, if the shape has no corners, such as a circle, cracks and chips can be suppressed.
  • a diameter shall be 0.1 mm or more and 1.0 mm or less. This is because if the thickness is less than 0.1 mm, it is difficult to form the protrusion 3a. On the other hand, if the thickness exceeds 1.0 mm, the total contact area with the object to be processed becomes too large, which may increase particle contamination due to rubbing and deterioration of detachment response.
  • the diameter of the protrusion 3a is 1.0 mm and the thickness of the cover is 10 ⁇ m, the diameter of the cover 7 that covers the protrusion 3a is 1.02 mm.
  • the dimension from the surface of the covering portion 7 formed on the top surface of the protruding portion 3a to the flat portion 3b is 5 ⁇ m or more and 15 ⁇ m or less. This is because if the thickness is less than 5 ⁇ m, there is a possibility that the surface on the side where the processing object is placed and the portion where the flat portion 3b is exposed come into contact when the processing object is adsorbed. On the other hand, if the thickness exceeds 15 ⁇ m, the space coulomb force described later is weakened, so that the adsorption force may be insufficient.
  • the arrangement pitch dimension of the protrusions 3a is preferably 2 mm or more and 15 mm or less. This is because if the thickness is less than 2 mm, the total contact area with the object to be processed becomes too large, which may increase particle contamination due to rubbing and deteriorate detachment response. On the other hand, if the thickness exceeds 15 mm, there is a possibility that the surface on which the processing object is placed and the portion where the flat surface portion 3b is exposed come into contact when the processing object is adsorbed.
  • the height of the protrusion 3a, the arrangement pitch dimension of the protrusion 3a, the thickness of the cover 7 and the area where the flat surface 3b is covered with the cover 7 around the protrusion 3a The size range is set so that the surface of the workpiece to be placed and the surface of the portion formed on the flat surface portion 3b of the covering portion 7 do not come into contact with each other when sucked.
  • the contact area ratio between the surface of the covering portion on the top surface of the protrusion 3a and the object to be processed is preferably 0.005% or more and 1.5% or less. If the content is less than 0.005%, it is difficult to form the protrusion 3a, and when the workpiece is adsorbed, the projection 3a is formed on the surface on the placement side of the workpiece and the flat portion 3b of the covering portion 7. This is because there is a risk of contact with the surface of the part. On the other hand, if it exceeds 1.5%, the total contact area with the object to be processed becomes too large, so that there is a possibility that the particle contamination increases due to rubbing and the detachment response deteriorates. Note that the calculation of the contact area ratio between the protrusion 3a and the object to be processed does not include the area of the ring-shaped protrusion described above.
  • the base of the covering portion 7 that is, the surfaces of the protrusion 3a and the flat portion 3b has a great influence on the arithmetic average height and adhesion (peelability) of the covering portion 7 formed thereon. Therefore, it is important that the arithmetic average heights of the protrusion 3a and the flat surface 3b are within a predetermined range.
  • the knowledge obtained by the present inventor regarding the base of the covering portion 7 will be described.
  • the arithmetic average height Ra at the top surface of the protrusion 3a is preferably 0.15 ⁇ m or more and 0.30 ⁇ m or less. This is because if the thickness is less than 0.15 ⁇ m, the adhesion of the covering portion 7 formed on the top surface of the protruding portion 3a may be reduced, and peeling may occur. Further, the surface shape of the underlayer is transferred to the surface of the covering portion 7 formed thereon. Therefore, if the thickness exceeds 0.30 ⁇ m, the unevenness formed on the surface of the covering portion 7 will be increased accordingly, and the time required to obtain a smooth surface (polishing time for finishing) will become longer and the productivity will be increased. This is because remarkably decreases.
  • the arithmetic average height of the flat surface portion 3b is 0.15 ⁇ m or more and 1.0 ⁇ m or less. This is because if the thickness is less than 0.15 ⁇ m, the adhesion of the covering portion 7 formed on the flat surface portion 3b may be reduced and peeling may occur.
  • the dimensional accuracy of the protrusion 3a may be deteriorated.
  • An object to be processed (for example, a semiconductor wafer) is placed on the surface (mounting surface) of the covering portion 7 formed on the top surface of the protruding portion 3a, and a voltage is applied to the electrode 4 by the power source 10a and the power source 10b. .
  • charges having different polarities are generated between the object to be processed and the vicinity of the top surface of the protrusion 3a, and the object to be processed is adsorbed and fixed by the Coulomb force acting between the charges.
  • the space 3c is formed above the plane portion 3b, charges having different polarities are generated in the plane portion 3b and the object to be processed thereabove, and the Coulomb force (space Coulomb force) acting between the charges is generated.
  • the object to be processed is fixed by suction. That is, the electrostatic chuck 1 attracts and fixes the object to be processed by the Coulomb force generated in the protruding portion 3a and the space Coulomb force generated in the flat portion 3b.
  • the object to be processed and the covering portion 7 come into contact with each other, so that particles may be generated. Therefore, in the present embodiment, the generation of particles is suppressed by setting the arithmetic average height of the surface of the covering portion 7 as described above. Moreover, since the thickness dimension of the coating
  • the portion where the space Coulomb force is generated (the portion of the space 3c formed above the flat surface portion 3b), the object to be processed and the flat surface portion 3b or the covering portion 7 do not come into contact with each other. There is no. Therefore, the occurrence of particle contamination can be greatly reduced by increasing the number of portions where the space Coulomb force is generated. Further, in the electrostatic chuck 1 according to the present embodiment, the portion where the space Coulomb force is generated is increased, and the object to be processed is prevented from being bent and coming into contact with the flat portion 3b or the covering portion 7. As described above, the height dimension, the arrangement pitch dimension, the diameter dimension, the contact area ratio between the surface of the covering part and the object to be processed at the top surface of the projection part 3a, and the like are set. Moreover, these conditions regarding the protrusion part 3a are also conditions under which an appropriate attractive force can be obtained even if the portion where the space coulomb force is generated is increased. The particle reduction effect will be described later (see Table 2).
  • the portion covered with the covering portion 7 is limited to a necessary range, the amount of remaining charges can be suppressed. Therefore, the detachment response of the object to be processed can be improved, and a stable adsorption force can be obtained. Further, the portion to which the external force is applied is separated from the end portion of the covering portion 7 which is likely to be peeled due to manufacturing. Therefore, even when an external force (external force acting in the peeling direction) that pulls the covering portion 7 in the vicinity of the top surface of the protruding portion 3a is generated when the workpiece is adsorbed and separated, the end portion of the covering portion 7 Can reduce the external force (external force acting in the peeling direction) that pulls the end of the covering portion 7 upward.
  • the end portion of the covering portion 7 that may cause burrs and burrs in production is provided at a position separated from the surface on which the workpiece is placed. For this reason, even if there are burrs and burrs at the end of the covering portion 7, it is possible to prevent the burrs and burrs from touching the surface on which the workpiece is placed. As a result, it is possible to suppress damage to the surface on the placement side of the object to be processed and increase in the number of particles.
  • the temperature of the object to be processed may be controlled via the electrostatic chuck 1.
  • the temperature of the object to be processed can be controlled by flowing a cooling liquid or a heating liquid through the flow path 8.
  • a cooling liquid or a heating liquid For convenience of explanation, the case where the temperature control is performed by flowing the cooling liquid or the heating liquid is illustrated, but other temperature control means such as a heater may be provided.
  • a gas for example, helium gas supplied from a gas supply unit (not shown) is adjusted in pressure and flow rate by a pressure control unit and a flow rate control unit (not shown), and then passes through the through hole 11 and above the flat portion 3b. Introduced into the space 3c formed. The introduced gas passes through the space 3c and spreads throughout. And since the thermal conductivity is remarkably increased by the introduced gas, it is possible to effectively heat and cool the workpiece.
  • a gas for example, helium gas supplied from a gas supply unit (not shown) is adjusted in pressure and flow rate by a pressure control unit and a flow rate control unit (not shown), and then passes through the through hole 11 and above the flat portion 3b. Introduced into the space 3c formed. The introduced gas passes through the space 3c and spreads throughout. And since the thermal conductivity is remarkably increased by the introduced gas, it is possible to effectively heat and cool the workpiece.
  • ring-shaped protrusions are arranged in a ring shape around the outer peripheral portion of the mounting surface of the object to be processed such as a semiconductor wafer and through holes other than those for gas introduction so that the aforementioned gas does not leak out.
  • a gas distribution groove (concave groove) (not shown) that is provided radially and concentrically on the flat portion 3b and communicates with the through hole 11, the gas distribution speed can be increased.
  • Table 2 is a table for illustrating the measurement result of the number of particles.
  • the number of particles generated can be reduced.
  • the number of particles was about 5000, and in the case of the case where the entire surface was covered with a covering (FIG. 1 (a) in Patent Document 1), the number of particles was 1000.
  • the number could be reduced to 740.
  • Table 2 as a comparative example, the number of particles generated in an electrostatic chuck without a coating portion (not coated with resin) is shown. In an electrostatic chuck without a covering portion, the number of particles is 3055, and it can be seen that the electrostatic chuck 1 in the present embodiment has a smaller number of generated particles than such an electrostatic chuck.
  • Table 3 is a table for illustrating the arithmetic average height of the flat surface portion 3b formed using the sandblast method. As can be seen from Table 3, when the plane portion 3b is formed using the sand blast method, the arithmetic average height Ra of the plane portion 3b falls within the above-described range (0.15 ⁇ m or more and 1.0 ⁇ m or less). be able to.
  • Table 4 is a table for illustrating the relationship between the arithmetic average height Ra of the base, the adhesion strength between the base and the covering portion, and the polishing time performed after the coating portion is formed (after the resin coating). .
  • the arithmetic average height of the base is 0.15 ⁇ m or more, good adhesion strength can be obtained. It can also be seen that the adhesion strength can be increased as the arithmetic average height is increased. Further, as described above, since the surface shape of the base is transferred to the surface of the covering portion 7 formed thereon, the time required to obtain a smooth surface when the arithmetic average height is excessively increased (polishing time) It turns out that becomes too long.
  • Table 5 shows the arithmetic average height Ra of the covering portion 7 immediately after film formation formed on the top surface of the protrusion 3a and the arithmetic average height of the covering portion 7 formed on the top surface of the protrusion 3a after polishing. It is a table
  • the arithmetic average height Ra of the surface of the covering portion 7 (contact surface with the object to be processed) formed on the top surface of the protrusion 3a is within the above-mentioned range (0.01 ⁇ m). As described above, it can be within 0.1 ⁇ m or less.
  • Table 6 is a table for illustrating the relationship between the suction force and the bending of the workpiece (semiconductor wafer) when the arrangement pitch of the protrusions 3a is changed.
  • the arrangement pitch of the protrusions 3a is within the above-mentioned range (2 mm or more and 15 mm or less)
  • the amount of deflection (1) of the workpiece (semiconductor wafer) even when the adsorption force is large. .55 ⁇ m or less) can be made smaller than the height dimension (2 ⁇ m or more and 15 ⁇ m or less) of the projection 3 a described above. Therefore, it is possible to prevent contact between the surface of the object to be processed and the surface of the covering portion 7 formed on the flat surface portion 3b.
  • FIG. 3 is a flowchart for illustrating the method of manufacturing the electrostatic chuck. First, a method for forming the dielectric substrate 3 will be illustrated.
  • an alumina raw material powder having an average particle diameter of 0.1 ⁇ m and a purity of 99.99% or more is used as a raw material, and this is mixed and pulverized with titanium oxide (TiO 2 ) exceeding 0.2 wt% and 0.6 wt% or less. Then, an acrylic binder is added, adjusted, and granulated with a spray dryer to produce granulated powder.
  • HIP processing hot isostatic pressing
  • the conditions for the HIP treatment are Ar gas of 1000 atm or more, and the temperature is 1150 ° C. to 1350 ° C. which is the same as the firing temperature. According to such conditions, the relative density is extremely dense as 99% or more, the average particle diameter of the constituent particles is 2 ⁇ m or less, and the volume resistivity is 10 8 to 10 11 ⁇ cm at 20 ⁇ 3 ° C., the thermal conductivity.
  • a dielectric substrate 3 having a thickness of 30 W / mK or more is obtained (step S1).
  • the average particle diameter here is a particle diameter obtained by the following planimetric method.
  • a picture of the dielectric substrate 3 is taken with a scanning electron microscope (SEM), a known circle having an area A is drawn on this photograph, and the number of particles in the circle nc and the particles that are covered by the circumference
  • the number of particles per unit area NG is obtained from the number ni by the following equation (1).
  • M shown here is the magnification of the photograph. Since 1 / NG is the area occupied by one particle, the average particle diameter can be obtained by the following equation (2) of the equivalent circle diameter.
  • a conductive film made of titanium or a titanium compound is formed by CVD (Chemical Vapor Deposition) or PVD (Physical Vapor Deposition).
  • the formed film is formed into a predetermined shape by a sandblasting method or an etching method, thereby forming an electrode 4 having a desired shape (step S2).
  • An electric wire 9 is appropriately wired to the electrode 4.
  • step S3 the protrusion 3a and the flat portion 3b are formed on the main surface on the side opposite to the main surface on which the electrode of the dielectric substrate 3 is provided by using the sand blast method.
  • Step S3a the portion where the flat portion 3b is formed is exposed without a mask, and the portion where the projection 3a is formed is covered with the mask.
  • the arithmetic average height Ra is set to 0.15 ⁇ m or more and 0.30 ⁇ m or less by polishing the main surface of the dielectric substrate 3.
  • the arithmetic average height of the top surface of the protrusion 3a is within the above-described range (Ra is 0.15 ⁇ m or more and 0.30 ⁇ m or less). Can be.
  • step S3b a portion of the main surface of the dielectric substrate 3 that is not covered by the mask is removed using a sandblast method.
  • the portion that has been removed becomes the flat surface portion 3b
  • the portion that has not been removed because it is covered with the mask becomes the projection portion 3a.
  • the arithmetic average height is within the above-described range (Ra is 0.15 ⁇ m or more and 1.0 ⁇ m or less) as shown in Table 3. Can do.
  • the arithmetic average height of the flat surface portion 3b is set to be at least larger than the arithmetic average height of the top surface of the protrusion 3a.
  • step S3c the mask is removed. In addition, you may make it remove the edge of the top part of the projection part 3a as needed.
  • the resin is coated so as to cover the protrusion 3a and the flat portion 3b (step S4).
  • This coated resin becomes the covering portion 7.
  • the material of the resin can be, for example, a polyimide resin.
  • it can also contain a polyimide resin at least.
  • the thickness dimension of the coated resin is set to 5 ⁇ m or more and 15 ⁇ m or less.
  • various film forming methods such as a vapor deposition polymerization method, a CVD (Chemical Vapor Deposition) method, and a spin coating method can be used for coating the resin.
  • step S5 it finishes so that the surface (contact surface with a to-be-processed object) of resin coat
  • the top surface of the protrusion 3a is coated so that the arithmetic average height of the resin surface coated on the top surface of the protrusion 3a is smaller than the arithmetic average height of the resin surface coated on the flat surface 3b.
  • the surface of the resin is processed.
  • the arithmetic average height of the resin surface coated on the top surface of the protrusion 3a is set within the above-described range (Ra: 0.01 ⁇ m or more, 0.1 ⁇ m or less). For example, such arithmetic average height can be obtained by polishing.
  • the covering portion 7 is formed by cutting and removing the resin covered by the flat portion 3b (step S6). That is, a part of the resin coated on the upper surface of the flat part 3b is cut, and the cut resin is removed to form the covering part 7.
  • the resin can be cut using a laser processing method or a water jet processing method.
  • the YAG laser is irradiated to the boundary portion of the portion to be removed, and the coated resin is cut.
  • coated part 7 is formed by removing the resin of the part which becomes unnecessary.
  • the resin is cut using a YAG laser, the generation of burrs and burrs can be suppressed, so that the quality of the end portion of the covering portion 7 can be improved.
  • the base 2 provided with the flow path 8 is created by cutting or the like, and the insulator layer 5 is formed on one main surface of the base 2 (step S7).
  • the insulator layer 5 can be formed on the entire surface of the base 2.
  • the insulator layer 5 can be formed using a thermal spraying method, an aerosol deposition method, or the like.
  • step S8 the main surface of the dielectric substrate 3 on which the electrode 4 is provided and the main surface on which the insulator layer 5 of the base 2 is provided are joined using an insulating adhesive (step S8).
  • the electric wire 9 is passed through the base 2 so that the electrode 4 and the power source 10 a and the power source 10 b can be connected by the electric wire 9.
  • the bonding layer 6 is obtained by curing the insulating adhesive.
  • step S9 the surface of the covering portion 7 is cleaned as necessary.
  • ultrasonic cleaning using IPA Isopropyl Alcohol
  • IPA Isopropyl Alcohol
  • ultrasonic cleaning using ultrapure water is performed.
  • the electrostatic chuck 1 according to the present embodiment can be manufactured.
  • FIG. 4 is a schematic cross-sectional view for illustrating an electrostatic chuck according to another embodiment of the present invention
  • FIG. 5 is for illustrating a specific example of the method for manufacturing the electrostatic chuck shown in FIG. It is a flowchart of.
  • FIG. 4A is a schematic cross-sectional view for illustrating the electrostatic chuck 1a
  • FIG. 4B is a schematic enlarged view of a portion C in FIG. 4A.
  • the protrusion 3a and the flat surface 3b are different from that described in FIG. 3 in the procedure for forming the protrusion 3a and the flat surface 3b. That is, after the insulator layer 5 and the dielectric substrate 3 are joined, the protrusion 3a and the flat portion 3b are formed on the upper surface of the dielectric substrate 3 (the main surface opposite to the main surface on which the electrodes are provided) by sandblasting. Like that.
  • the dielectric substrate 3 is formed from the raw material through molding, firing, and HIP processing (step S11) in the same manner as in step S1 of FIG. 3, and the dielectric substrate is formed in the same manner as in step S2 of FIG.
  • An electrode is formed on one main surface of No. 3 (step S12).
  • the insulator layer 5 is formed (step S13). Then, similarly to step S8 of FIG. 3, the main surface of the dielectric substrate 3 on which the electrode 4 is provided and the main surface of the insulator layer 5 are joined using an insulating adhesive (step S14). .
  • step S15a the main surface of the dielectric substrate 3 opposite to the main surface provided with the electrode 4 is polished, a resist film is attached to the surface, and the surface is exposed to light.
  • a mask having a desired shape is formed (step S15a).
  • step S15b the portion not covered with the mask is removed using the sandblast method.
  • step S15c the mask is removed in the same manner as in step S3c of FIG. 3 (step S15c).
  • step S16 the resin is coated so as to cover the protrusion 3a and the flat portion 3b (step S16).
  • the surface of the resin coated on the top surface of the protrusion 3a is finished to be smooth (step S17).
  • step S6 of FIG. 3 the coated resin 7 is cut and removed to form the coated portion 7 (step S18).
  • step S9 in FIG. 3 the surface of the covering 7 is cleaned as necessary (step S19).
  • the contents in each procedure are the same as those illustrated in FIG.
  • the occurrence of particle contamination can be suppressed, the detachment response of the object to be processed is good, and the covering portion formed on the mounting surface portion of the electrostatic chuck Since an electrostatic chuck and a manufacturing method of the electrostatic chuck having high peeling durability can be provided, there are great industrial advantages.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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PCT/JP2010/050353 2009-01-14 2010-01-14 静電チャックおよび静電チャックの製造方法 WO2010082606A1 (ja)

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US9620478B2 (en) 2011-11-18 2017-04-11 Apple Inc. Method of fabricating a micro device transfer head
US9650302B2 (en) 2011-03-30 2017-05-16 Ngk Insulators, Ltd. Method for producing electrostatic chuck and electrostatic chuck
US9831383B2 (en) 2011-11-18 2017-11-28 Apple Inc. LED array
US10121864B2 (en) 2011-11-18 2018-11-06 Apple Inc. Micro device transfer head heater assembly and method of transferring a micro device
US10297712B2 (en) 2011-11-18 2019-05-21 Apple Inc. Micro LED display

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KR20190010748A (ko) * 2014-06-23 2019-01-30 니혼도꾸슈도교 가부시키가이샤 정전 척
JP2018206993A (ja) * 2017-06-06 2018-12-27 日本特殊陶業株式会社 基板保持部材およびその製造方法
JP7083080B2 (ja) * 2018-01-11 2022-06-10 株式会社日立ハイテク プラズマ処理装置
JP7308254B2 (ja) * 2018-02-19 2023-07-13 日本特殊陶業株式会社 保持装置
CN113056816B (zh) * 2018-11-19 2024-11-12 恩特格里斯公司 具有电荷耗散涂层的静电卡盘
EP3846334B1 (en) * 2019-09-11 2025-02-19 Creative Technology Corporation Attachment/detachment device
JP7606917B2 (ja) * 2021-04-16 2024-12-26 日本特殊陶業株式会社 保持装置
JP7718902B2 (ja) * 2021-08-06 2025-08-05 株式会社フェローテックマテリアルテクノロジーズ ウエハ支持体
JP2025103535A (ja) 2023-12-27 2025-07-09 新東工業株式会社 ブラシ研磨装置、及びウエハ保持装置の製造方法

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US9620478B2 (en) 2011-11-18 2017-04-11 Apple Inc. Method of fabricating a micro device transfer head
US9831383B2 (en) 2011-11-18 2017-11-28 Apple Inc. LED array
US10121864B2 (en) 2011-11-18 2018-11-06 Apple Inc. Micro device transfer head heater assembly and method of transferring a micro device
US10297712B2 (en) 2011-11-18 2019-05-21 Apple Inc. Micro LED display
US10607961B2 (en) 2011-11-18 2020-03-31 Apple Inc. Micro device transfer head heater assembly and method of transferring a micro device
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US12243955B2 (en) 2011-11-18 2025-03-04 Apple Inc. Display and micro device array for transfer to a display substrate
CN102799064A (zh) * 2012-08-21 2012-11-28 郑州大学 一种金属图形直接压印转移掩模板基板静电场力分离装置

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JP2010165805A (ja) 2010-07-29

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