JP5293211B2 - 静電チャックおよび静電チャックの製造方法 - Google Patents

静電チャックおよび静電チャックの製造方法 Download PDF

Info

Publication number
JP5293211B2
JP5293211B2 JP2009006147A JP2009006147A JP5293211B2 JP 5293211 B2 JP5293211 B2 JP 5293211B2 JP 2009006147 A JP2009006147 A JP 2009006147A JP 2009006147 A JP2009006147 A JP 2009006147A JP 5293211 B2 JP5293211 B2 JP 5293211B2
Authority
JP
Japan
Prior art keywords
electrostatic chuck
resin
covering portion
protrusion
flat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009006147A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010165805A5 (enrdf_load_stackoverflow
JP2010165805A (ja
Inventor
裕明 堀
健志 内村
宏樹 松井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toto Ltd
Original Assignee
Toto Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toto Ltd filed Critical Toto Ltd
Priority to JP2009006147A priority Critical patent/JP5293211B2/ja
Priority to TW99100929A priority patent/TWI427735B/zh
Priority to PCT/JP2010/050353 priority patent/WO2010082606A1/ja
Publication of JP2010165805A publication Critical patent/JP2010165805A/ja
Publication of JP2010165805A5 publication Critical patent/JP2010165805A5/ja
Application granted granted Critical
Publication of JP5293211B2 publication Critical patent/JP5293211B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2009006147A 2009-01-14 2009-01-14 静電チャックおよび静電チャックの製造方法 Expired - Fee Related JP5293211B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009006147A JP5293211B2 (ja) 2009-01-14 2009-01-14 静電チャックおよび静電チャックの製造方法
TW99100929A TWI427735B (zh) 2009-01-14 2010-01-14 Electrostatic chuck and electrostatic chuck manufacturing method
PCT/JP2010/050353 WO2010082606A1 (ja) 2009-01-14 2010-01-14 静電チャックおよび静電チャックの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009006147A JP5293211B2 (ja) 2009-01-14 2009-01-14 静電チャックおよび静電チャックの製造方法

Publications (3)

Publication Number Publication Date
JP2010165805A JP2010165805A (ja) 2010-07-29
JP2010165805A5 JP2010165805A5 (enrdf_load_stackoverflow) 2012-03-01
JP5293211B2 true JP5293211B2 (ja) 2013-09-18

Family

ID=42339860

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009006147A Expired - Fee Related JP5293211B2 (ja) 2009-01-14 2009-01-14 静電チャックおよび静電チャックの製造方法

Country Status (3)

Country Link
JP (1) JP5293211B2 (enrdf_load_stackoverflow)
TW (1) TWI427735B (enrdf_load_stackoverflow)
WO (1) WO2010082606A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020106521A1 (en) * 2018-11-19 2020-05-28 Entegris, Inc. Electrostatic chuck with charge dissipation coating

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5458050B2 (ja) 2011-03-30 2014-04-02 日本碍子株式会社 静電チャックの製法
US8349116B1 (en) 2011-11-18 2013-01-08 LuxVue Technology Corporation Micro device transfer head heater assembly and method of transferring a micro device
US8646505B2 (en) 2011-11-18 2014-02-11 LuxVue Technology Corporation Micro device transfer head
US8809875B2 (en) 2011-11-18 2014-08-19 LuxVue Technology Corporation Micro light emitting diode
US8573469B2 (en) 2011-11-18 2013-11-05 LuxVue Technology Corporation Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer
CN102799064B (zh) * 2012-08-21 2014-03-26 郑州大学 一种金属图形直接压印转移掩模板基板静电场力分离装置
US9460950B2 (en) * 2013-12-06 2016-10-04 Applied Materials, Inc. Wafer carrier for smaller wafers and wafer pieces
CN105981142B (zh) * 2013-12-06 2019-11-01 应用材料公司 用于使预热构件自定中心的装置
KR20190010748A (ko) * 2014-06-23 2019-01-30 니혼도꾸슈도교 가부시키가이샤 정전 척
JP2018206993A (ja) * 2017-06-06 2018-12-27 日本特殊陶業株式会社 基板保持部材およびその製造方法
JP7083080B2 (ja) * 2018-01-11 2022-06-10 株式会社日立ハイテク プラズマ処理装置
JP7308254B2 (ja) * 2018-02-19 2023-07-13 日本特殊陶業株式会社 保持装置
EP3846334B1 (en) * 2019-09-11 2025-02-19 Creative Technology Corporation Attachment/detachment device
JP7606917B2 (ja) * 2021-04-16 2024-12-26 日本特殊陶業株式会社 保持装置
JP7718902B2 (ja) * 2021-08-06 2025-08-05 株式会社フェローテックマテリアルテクノロジーズ ウエハ支持体
JP2025103535A (ja) 2023-12-27 2025-07-09 新東工業株式会社 ブラシ研磨装置、及びウエハ保持装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0643629B2 (ja) * 1987-01-22 1994-06-08 日本真空技術株式会社 静電チャック部品の製造方法
JP2001060618A (ja) * 1999-08-20 2001-03-06 Canon Inc 基板吸着保持方法、基板吸着保持装置および該基板吸着保持装置を用いた露光装置ならびにデバイスの製造方法
JP4094262B2 (ja) * 2001-09-13 2008-06-04 住友大阪セメント株式会社 吸着固定装置及びその製造方法
JP3847198B2 (ja) * 2002-03-27 2006-11-15 京セラ株式会社 静電チャック
JP2006287210A (ja) * 2005-03-07 2006-10-19 Ngk Insulators Ltd 静電チャック及びその製造方法
TW200735254A (en) * 2006-03-03 2007-09-16 Ngk Insulators Ltd Electrostatic chuck and producing method thereof
JP4987682B2 (ja) * 2007-04-16 2012-07-25 ソニー株式会社 音声チャットシステム、情報処理装置、音声認識方法およびプログラム
JP4418032B2 (ja) * 2007-09-11 2010-02-17 キヤノンアネルバ株式会社 静電チャック

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020106521A1 (en) * 2018-11-19 2020-05-28 Entegris, Inc. Electrostatic chuck with charge dissipation coating

Also Published As

Publication number Publication date
TWI427735B (zh) 2014-02-21
TW201034114A (en) 2010-09-16
WO2010082606A1 (ja) 2010-07-22
JP2010165805A (ja) 2010-07-29

Similar Documents

Publication Publication Date Title
JP5293211B2 (ja) 静電チャックおよび静電チャックの製造方法
JP4739039B2 (ja) 静電チャック装置
JP4031732B2 (ja) 静電チャック
JP5453902B2 (ja) 静電チャックおよび静電チャックの製造方法
US8879233B2 (en) Electrostatic chuck with polymer protrusions
US9394615B2 (en) Plasma resistant ceramic coated conductive article
JP5633766B2 (ja) 静電チャック
JP4890734B2 (ja) 低汚染プラズマチャンバ構成部品とその製造方法
JP2008160093A (ja) 静電チャック、静電チャックの製造方法および基板処理装置
TW202246198A (zh) 具有沉積表面特徵之基板支撐組件
JP5454803B2 (ja) 静電チャック
CN102210196A (zh) 用于等离子腔室部件的抗等离子涂层
JP5510411B2 (ja) 静電チャック及び静電チャックの製造方法
JP2006332204A (ja) 静電チャック
JP2007207840A (ja) サセプタ装置
JP2005057234A (ja) 静電チャック
US12046502B2 (en) Electrostatic puck and method of manufacture
JP4312372B2 (ja) 静電チャックおよびその製造方法
JP5515365B2 (ja) 静電チャックおよび静電チャックの製造方法
JP2006066857A (ja) 双極型静電チャック
JP6503689B2 (ja) 静電チャック装置およびその製造方法
JP5279455B2 (ja) 静電チャック
JP4879771B2 (ja) 静電チャック
CN116936442A (zh) 静电卡盘设备

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120113

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120113

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130305

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130423

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130514

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130527

R150 Certificate of patent or registration of utility model

Ref document number: 5293211

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees