WO2010072555A1 - Elektrisches oder elektronisches verbundbauteil sowie verfahren zum herstellen eines elektrischen oder elektronischen verbundbauteils - Google Patents
Elektrisches oder elektronisches verbundbauteil sowie verfahren zum herstellen eines elektrischen oder elektronischen verbundbauteils Download PDFInfo
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- WO2010072555A1 WO2010072555A1 PCT/EP2009/066518 EP2009066518W WO2010072555A1 WO 2010072555 A1 WO2010072555 A1 WO 2010072555A1 EP 2009066518 W EP2009066518 W EP 2009066518W WO 2010072555 A1 WO2010072555 A1 WO 2010072555A1
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- sintered
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29075—Plural core members
- H01L2224/2908—Plural core members being stacked
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83205—Ultrasonic bonding
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Powder Metallurgy (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/141,947 US20110304985A1 (en) | 2008-12-23 | 2009-12-07 | Electrical or electronic composite component and method for producing an electrical or electronic composite component |
CN2009801522006A CN102265393A (zh) | 2008-12-23 | 2009-12-07 | 电气的或者电子的复合构件以及用于制造该复合构件的方法 |
AU2009331707A AU2009331707A1 (en) | 2008-12-23 | 2009-12-07 | Electrical or electronic composite component and method for producing an electrical or electronic composite component |
JP2011542749A JP5602763B2 (ja) | 2008-12-23 | 2009-12-07 | 電気複合構成部材または電子複合構成部材、および、電気複合構成部材または電子複合構成部材の製造方法 |
EP09764842A EP2382659A1 (de) | 2008-12-23 | 2009-12-07 | Elektrisches oder elektronisches verbundbauteil sowie verfahren zum herstellen eines elektrischen oder elektronischen verbundbauteils |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008055134A DE102008055134A1 (de) | 2008-12-23 | 2008-12-23 | Elektrisches oder elektronisches Verbundbauteil sowie Verfahren zum Herstellen eines elektrischen oder elektronischen Verbundbauteils |
DE102008055134.1 | 2008-12-23 |
Publications (1)
Publication Number | Publication Date |
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WO2010072555A1 true WO2010072555A1 (de) | 2010-07-01 |
Family
ID=41467197
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2009/066518 WO2010072555A1 (de) | 2008-12-23 | 2009-12-07 | Elektrisches oder elektronisches verbundbauteil sowie verfahren zum herstellen eines elektrischen oder elektronischen verbundbauteils |
Country Status (7)
Country | Link |
---|---|
US (1) | US20110304985A1 (de) |
EP (1) | EP2382659A1 (de) |
JP (1) | JP5602763B2 (de) |
CN (1) | CN102265393A (de) |
AU (1) | AU2009331707A1 (de) |
DE (1) | DE102008055134A1 (de) |
WO (1) | WO2010072555A1 (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140234649A1 (en) * | 2011-09-30 | 2014-08-21 | Robert Bosch Gmbh | Layered composite of a substrate film and of a layer assembly comprising a sinterable layer made of at least one metal powder and a solder layer |
WO2016193038A1 (de) * | 2015-06-01 | 2016-12-08 | Siemens Aktiengesellschaft | Verfahren zur elektrischen kontaktierung eines bauteils mittels galvanischer anbindung eines offenporigen kontaktstücks und entsprechendes bauteilmodul |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011083931A1 (de) * | 2011-09-30 | 2013-04-04 | Robert Bosch Gmbh | Schichtverbund aus einem elektronischen Substrat und einer Schichtanordnung umfassend ein Reaktionslot |
CN109390308B (zh) * | 2014-11-26 | 2023-02-10 | 意法半导体股份有限公司 | 具有引线键合和烧结区域的半导体器件及其制造工艺 |
JP6287789B2 (ja) * | 2014-12-03 | 2018-03-07 | 三菱電機株式会社 | パワーモジュール及びその製造方法 |
DE102015113421B4 (de) * | 2015-08-14 | 2019-02-21 | Danfoss Silicon Power Gmbh | Verfahren zum Herstellen von Halbleiterchips |
US9655280B1 (en) * | 2015-12-31 | 2017-05-16 | Lockheed Martin Corporation | Multi-directional force generating line-replaceable unit chassis by means of a linear spring |
US11183479B2 (en) | 2017-03-30 | 2021-11-23 | Mitsubishi Electric Corporation | Semiconductor device, method for manufacturing the same, and power conversion device |
DE102017206930A1 (de) * | 2017-04-25 | 2018-10-25 | Siemens Aktiengesellschaft | Lotformteil zum Diffusionslöten, Verfahren zu dessen Herstellung und Verfahren zu dessen Montage |
DE102017217537B4 (de) | 2017-10-02 | 2021-10-21 | Danfoss Silicon Power Gmbh | Leistungsmodul mit integrierter Kühleinrichtung |
CN114846598A (zh) * | 2019-12-26 | 2022-08-02 | 三菱电机株式会社 | 功率模块和电力变换装置 |
DE102020102876B4 (de) | 2020-02-05 | 2023-08-10 | Infineon Technologies Ag | Elektronisches Bauelement, Herstellungsverfahren dafür und Verfahren zur Herstellung eines elektronischen Moduls dieses aufweisend mittels eines Sinterverfahrens mit einer Opferschicht auf der Rückseitenmetallisierung eines Halbleiterdies |
EP4283662A1 (de) * | 2022-05-23 | 2023-11-29 | Hitachi Energy Switzerland AG | Verfahren zum befestigen eines anschlusses an einer metallsubstratstruktur für ein halbleiterleistungsmodul und halbleiterleistungsmodul |
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EP0242626A2 (de) * | 1986-04-22 | 1987-10-28 | Siemens Aktiengesellschaft | Verfahren zur Befestigung von elektronischen Bauelementen auf einem Substrat |
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EP0224626B1 (de) | 1985-10-30 | 1990-01-31 | International Business Machines Corporation | Synchronisiertes System für mehrere Signalprozessoren |
DE3777995D1 (de) * | 1986-12-22 | 1992-05-07 | Siemens Ag | Verfahren zur befestigung von elektronischen bauelementen auf einem substrat, folie zur durchfuehrung des verfahrens und verfahren zur herstellung der folie. |
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- 2009-12-07 EP EP09764842A patent/EP2382659A1/de not_active Withdrawn
- 2009-12-07 AU AU2009331707A patent/AU2009331707A1/en not_active Abandoned
- 2009-12-07 US US13/141,947 patent/US20110304985A1/en not_active Abandoned
- 2009-12-07 CN CN2009801522006A patent/CN102265393A/zh active Pending
- 2009-12-07 JP JP2011542749A patent/JP5602763B2/ja not_active Expired - Fee Related
- 2009-12-07 WO PCT/EP2009/066518 patent/WO2010072555A1/de active Application Filing
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140234649A1 (en) * | 2011-09-30 | 2014-08-21 | Robert Bosch Gmbh | Layered composite of a substrate film and of a layer assembly comprising a sinterable layer made of at least one metal powder and a solder layer |
WO2016193038A1 (de) * | 2015-06-01 | 2016-12-08 | Siemens Aktiengesellschaft | Verfahren zur elektrischen kontaktierung eines bauteils mittels galvanischer anbindung eines offenporigen kontaktstücks und entsprechendes bauteilmodul |
US11037862B2 (en) | 2015-06-01 | 2021-06-15 | Siemens Aktiengesellschaft | Method for electrically contacting a component by galvanic connection of an open-pored contact piece, and corresponding component module |
Also Published As
Publication number | Publication date |
---|---|
JP2012513682A (ja) | 2012-06-14 |
CN102265393A (zh) | 2011-11-30 |
AU2009331707A1 (en) | 2010-07-01 |
EP2382659A1 (de) | 2011-11-02 |
JP5602763B2 (ja) | 2014-10-08 |
US20110304985A1 (en) | 2011-12-15 |
DE102008055134A1 (de) | 2010-07-01 |
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