CN114846598A - 功率模块和电力变换装置 - Google Patents

功率模块和电力变换装置 Download PDF

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Publication number
CN114846598A
CN114846598A CN201980103160.XA CN201980103160A CN114846598A CN 114846598 A CN114846598 A CN 114846598A CN 201980103160 A CN201980103160 A CN 201980103160A CN 114846598 A CN114846598 A CN 114846598A
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Prior art keywords
power module
semiconductor element
layer
bonding
circuit
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CN201980103160.XA
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English (en)
Inventor
横山吉典
根岸哲
山崎浩次
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN114846598A publication Critical patent/CN114846598A/zh
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Abstract

得到降低从半导体元件至底板的热阻并实现了接合部的应力缓和的功率模块。功率模块具备：半导体元件(1)；绝缘基板(11)，具有绝缘层(5)，在绝缘层(5)的上表面设置了电路层(3、7)并在下表面设置了金属层(4、6)；以及烧结性接合构件(2)，将半导体元件(1)的背面和绝缘层(5)的上表面侧的电路层(3)的上表面接合，具有比半导体元件(1)的背面侧的外周更大的上表面。

Description

功率模块和电力变换装置
技术领域
本公开涉及降低了热阻的功率模块和电力变换装置。
背景技术
在功率模块中，因使装载于功率模块的半导体元件动作，半导体元件发热。半导体元件的发热使得在构成功率模块的各结构构件之间产生热应力，成为使功率模块的可靠性劣化的原因。因此，在功率模块中，为了抑制由于半导体元件的发热的温度上升，要求高散热性。
因此，以抑制由于半导体元件的发热引起的影响为目的，为了提高自半导体元件的散热性并降低热阻，通过比半导体元件大的金属板，使半导体元件的热在横向方向上扩散并散热(例如，专利文献1)。
现有技术文献
专利文献
专利文献1：日本特开2014-120717号公报
发明内容
发明要解决的课题
然而，在专利文献1记载的功率模块中，半导体元件通过接合材料接合到金属板，使金属板的大小大于半导体元件的大小，由此使热向横向方向扩散，然而将焊料用作接合材料，焊料的大小与半导体元件的大小是大致相同的大小，因此在从半导体元件至金属板的路径中，热阻高而无法充分得到扩散热的效果，存在功率模块的可靠性劣化的问题。
本公开是为了解决上述那样的课题而完成的，其目的在于得到通过扩散在半导体元件中的发热而提高自半导体元件的散热性并提高了可靠性的功率模块。
用于解决课题的手段
本公开的功率模块具备：半导体元件；绝缘基板，具有绝缘层，在绝缘层的上表面设置了电路层并在下表面设置了金属层；烧结性接合构件，将半导体元件的背面和绝缘层的上表面侧的金属层的上表面接合，并具有比半导体元件的背面侧的外周更大的上表面。
发明效果
根据本公开，设置了比半导体元件的背面侧的外周更大的烧结性接合构件，因此能够提高自半导体元件的散热性，并能够提高功率模块的可靠性。
附图说明
图1是示出实施方式1中的功率模块的截面结构示意图。
图2是示出实施方式1中的功率模块的平面结构示意图。
图3是放大了实施方式1中的功率模块的半导体元件接合部的截面结构示意图。
图4是放大了实施方式1中的功率模块的其他半导体元件接合部的截面结构示意图。
图5是放大了实施方式1中的功率模块的半导体元件接合部的平面结构示意图。
图6是示出实施方式1中的其他功率模块的截面结构示意图。
图7是示出实施方式2中的功率模块的截面结构示意图。
图8是示出实施方式2中的功率模块的平面结构示意图。
图9是示出实施方式3中的功率模块的截面结构示意图。
图10是示出实施方式3中的其他功率模块的截面结构示意图。
图11是示出实施方式3中的其他功率模块的截面结构示意图。
图12是示出应用了实施方式4中的电力变换装置的电力变换系统的结构的框图。
(附图标记说明)
1：半导体元件；2：烧结性接合构件；3：第一电路层；4：第二电路层；5：绝缘层(陶瓷基板)；6：第二金属层；7：第一金属层；8：底板；9：密封构件；10：接合线(bonding wire)；11、31：绝缘基板；12：引线端子；13：主电极；14：控制信号电极；15：主端子；16：主端子接合层；17：第一电路层的凹部；18：烧结性接合构件的凹部；20：倾斜(锥形)角；21：绝缘基板下接合构件；22：应力缓冲层；23：烧结性接合构件的平坦部；24：烧结性接合构件的侧面部；25：主端子的突出部；26：烧结性接合构件的突出部；100、200、300、400、500、600、2002：功率模块；1000：电源；2000：电力变换装置；2001：主变换电路；2003：控制电路；3000：负载。
具体实施方式
首先，一边参照附图，一边说明本公开的功率模块的整体结构。另外，附图是示意性的，不反映所示的结构要素的准确大小等。另外，赋予了相同符号的部分是相同或与之相当的部分，这在说明书的全文中是共通的。
实施方式1。
图1是示出实施方式1中的功率模块的截面结构示意图。图2是示出实施方式1中的功率模块的平面结构示意图。图1是图2的单点划线AA处的截面结构示意图。图2是透过密封构件9从上表面看功率模块100的平面结构示意图。
图中，功率模块100具备半导体元件1、烧结性接合构件2、绝缘基板11、底板8、密封构件9、作为布线构件的接合线10和引线端子12。
图1中，关于功率模块100，绝缘基板11直接接合到底板8的上表面。半导体元件1经由烧结性接合构件2接合到绝缘基板11的上表面，该烧结性接合构件2具有比半导体元件1的背面侧的外周更大的上表面。在半导体元件1的上表面，形成有主电极13和控制信号电极14。半导体元件1的主电极13和控制信号电极14分别经由接合线10与引线端子12连接。密封构件9与底板8的上表面相接，密封绝缘基板11、半导体元件1和接合线10。关于引线端子12，一端配置在密封构件9的内部，另一端从密封构件9的侧面突出。
在图2中，密封构件9用虚线显示，以便知道由密封构件9密封的构件的位置关系。功率模块100的最外周是底板8的周边部。在比底板8的周边部更内侧配置有密封构件9。另外，在比密封构件9的外缘更内侧，配置有绝缘基板11的绝缘层5。进一步地，在比绝缘基板11的绝缘层5的外缘更内侧，配置有绝缘基板11的上表面侧的第二电路层4。另外，在比第二电路层4的外缘更内侧，配置有第一电路层3。进一步地，在比第一电路层3的外缘更内侧，配置有烧结性接合构件2。关于烧结性接合构件2，外周大于半导体元件1的背面侧的外周，半导体元件1接合到烧结性接合构件2的上表面。另外，烧结性接合构件2的外周优选为遍及整周大于半导体元件1的外周，但是也可以在整周的一部分有与半导体元件1的外周相同的区域或者小的区域。
引线端子12有多个，分别设置在功率模块100的相向的边。引线端子12的一端配置在比密封构件9的外缘更内侧，引线端子12的另一端配置在比密封构件9的外缘更外侧。引线端子12经由接合线10与在半导体元件1的上表面形成的主电极13或者控制信号电极14接合。
接下来，说明各个结构、材料和材质。
半导体元件1具有正面(上表面)和背面(下表面)。在半导体元件1的正面，形成有作为正面电极的主电极13和控制信号电极14，在背面，形成有与半导体元件1的背面侧的外周相同大小的背面电极(未图示)。作为端子构件的引线端子12经由作为布线构件的接合线10连接到半导体元件1的主电极13和控制信号电极14。作为半导体元件1，例如能够应用绝缘栅型双极晶体管(IGBT：Insulated Gate Bipolar Transistor)、续流二极管(FWD：FreeWheel Diode)、金属氧化物半导体场效应晶体管(MOSFET：Metal Oxide SemiconductorField Effect Transistor)等。
作为半导体元件1的材料，是硅(Si：Silicon)、碳化硅(SiC：Silicon Carbide)、氮化镓(GaN：Gallium Nitride)、氧化镓(Ga2O3：Gallium(III)Oxide)等。然而，半导体元件1的种类、材料不限于这些。另外，作为半导体元件1的数目，在图1的功率模块100中是1个，但是也可以使用多个半导体元件1构成功率模块100。在使用多个半导体元件1的情况下也可以使用烧结性接合构件2接合多个半导体元件1和第一电路层3。
如图1、图2所示，在半导体元件1的表面，设置有主电极13和控制信号电极14。然而，在半导体元件1的表面形成的电极的种类不限于这些。例如，在半导体元件1的表面，也可以仅形成主电极13。
绝缘基板11具有上表面和下表面。绝缘基板11具有绝缘层5。作为绝缘层5，例如应用将氧化铝(Al2O3：Aluminum Oxide)、氮化铝(AlN：Aluminum Nitride)、氮化硅(Si3N4：Silicon Nitride)等用作材料的陶瓷基板。然而，陶瓷基板的材料不限于这些。
绝缘层5具有上表面和下表面。在绝缘层5的上表面侧，形成有作为电路层的第一电路层3和第二电路层4。第二电路层4的下表面配置为与绝缘层5的上表面相接。第一电路层3的下表面配置为与第二电路层4的上表面相接。另外，在绝缘层5的下表面侧，形成有作为金属层的第一金属层7和第二金属层6。第二金属层6的上表面配置为与绝缘层5的下表面相接。第一金属层7的上表面配置为与第二金属层6的下表面相接。在第一电路层3和第一金属层7中，例如使用铜(Cu)，在第二电路层4和第二金属层6中，例如使用铝(Al)。然而，用于第一电路层3、第一金属层7、第二电路层4和第二金属层6的材料不限于这些。
第二电路层4和第二金属层6能够使用直接接合法或活性金属接合法与作为绝缘层5的陶瓷基板接合即可。另外，第一电路层3和第一金属层7分别能够通过直接接合法或活性金属接合法经由第二电路层4或第二金属层6与陶瓷基板5接合即可。用于第一电路层3、第一金属层7、第二电路层4和第二金属层6的材料是具有高导电性的材料即可。第二电路层4和第二金属层6在将线膨胀系数与陶瓷基板不同的第一电路层3或第一金属层7和陶瓷基板进行接合的情况下，用作缓和在这些层间产生的应力的缓和层。此处，直接接合法是指通过使第二电路层4以及第二金属层6与陶瓷基板直接进行反应来接合的方法。另外，活性金属接合法是指通过添加了钛(Ti)、锆(Zr)等活性金属的钎料来接合第二电路层4或第二金属层6与陶瓷基板的方法。
在绝缘基板11中，如果将第一电路层3和第二电路层4或者第一金属层7和第二金属层6的外周端部以大致相同的横向方向的大小对齐，则应力集中在第一电路层3或第一金属层7的外周端部，在用作应力缓和层的第二电路层4或第二金属层6等中产生裂纹(龟裂)，并担心裂纹还传播到陶瓷基板。因此，为了抑制裂纹的传播，第一电路层3和第一金属层7的横向方向的大小分别小于第二电路层4和第二金属层6的横向方向的大小。
烧结性接合构件2具有上表面和下表面。烧结性接合构件2设置在半导体元件1和第一电路层3之间。烧结性接合构件2将半导体元件1的背面电极和第一电路层3的上表面接合。烧结性接合构件2的外周的大小大于半导体元件1的背面侧的外周的大小，具有比半导体元件1的背面侧的外周更向外侧突出(露出)的平坦部23。烧结性接合构件2是包含银或铜的金属粒子的金属导体。作为烧结性接合构件2的原材料，例如能够使用Ag纳米粒子膏或Cu纳米粒子膏或者在这些粒子中包含微小尺寸的粒子的烧结膏材料。在该烧结性接合构件2的内部，存在基于多个粒子的空隙。利用在烧结性接合构件2的整体体积中所占的空隙的体积的比例来定义的空隙率设为30％以上且50％以下，由此能够形成弹性模量为13GPa以下的柔软的烧结性接合构件2。烧结性接合构件2的热阻小于绝缘层5、绝缘层5的上表面侧的第一电路层3和第二电路层4以及绝缘层5的下表面侧的第一金属层7和第二金属层6中的任一个的热阻。
在图1、图2中记载了半导体元件1、烧结性接合构件2和第一电路层3各有一个的情况，但也可以是半导体元件1和烧结性接合构件2有同样多个，这些多个半导体元件1和烧结性接合构件2各自装载到第一电路层3的上表面。
底板8是板状的，并具有上表面和下表面。底板8有将在功率模块100的动作中产生的热向功率模块100的外部散热的作用。因此，作为底板8，使用导热性好的材料。作为底板8的材料，例如使用以铝(Al)、铜(Cu)的任一个为主要成分的合金、碳化硅(SiC)和Al的复合材料(Al-SiC)或者SiC和镁(Mg)的复合材料(Mg-SiC)。然而，用于底板8的材料不限定于这些。
绝缘基板11直接接合到底板8的上表面。也就是说，绝缘基板11的下表面侧的第一金属层7直接接合到底板8的上表面。作为将绝缘基板11的下表面侧的第一金属层7接合到底板8的上表面的方法，通过直接接合法或活性金属接合法接合。
密封构件9是如下树脂：关于接合到底板8的上表面的绝缘基板11和通过烧结性接合构件2接合到绝缘基板11的上表面的半导体元件1，与底板8的上表面相接地将底板8的上表面侧密封。功率模块100也可将图1记载的结构作为单个单元，组合多个该单个单元来使用。因此，也可以不对每个单个单元进行密封，而是将装载了多个单元的功率模块的框体内部使用密封构件9一次性(一体地)密封。作为密封构件9的材料，例如使用环氧树脂。然而，作为用于密封构件9的材料，不限于此，例如能够使用硅酮树脂、氨基甲酸乙酯树脂、聚酰亚胺树脂、聚酰胺树脂、聚酰胺酰亚胺树脂、丙烯酸树脂和橡胶材料等。
引线端子12是用于将通过密封构件9覆盖的功率模块100的内部和外部电连接的端子构件。引线端子12经由接合线10与半导体元件1的正面电极连接。作为引线端子12的材料，是铝、铜、银、金或者这些的合金、复合材料等电的良导体，只要是能够接合(bond)接合线10的材质，则不限于这些。
接合线10将在半导体元件1的正面形成的电极和引线端子12电连接。接合线10与半导体元件1的正面侧接合。另外，接合线10也能够用作将绝缘基板11的上表面侧的电路层间进行连接的布线。图2中，关于接合线10的数目，在控制信号电极14各形成1根，在主电极13形成3根，然而不限于此，根据功率模块100的电路结构上的需要，也可以使用许多接合线10或者不同粗细的接合线10进行布线。作为接合线10的材质，是铝、铜、银、金或者这些合金、复合材料等电的良导体，只要是能够对主电极13、控制信号电极14和引线端子12进行接合(bond)的材质，则不限定于这些。
图3是放大了实施方式1中的功率模块的半导体元件接合部的截面结构示意图。图4是放大了实施方式1中的功率模块的其他半导体元件接合部的截面结构示意图。图5是放大了实施方式1中的功率模块的半导体元件接合部的平面结构示意图。
图3中，烧结性接合构件2具有平坦部23和侧面部24。烧结性接合构件2的外周大于半导体元件1的背面侧的外周，平坦部23比半导体元件1的背面的外周更向外侧突出。另外，在烧结性接合构件2的侧面部24，是烧结性接合构件2的上表面和烧结性接合构件2的下表面的距离从烧结性接合构件2的外侧向内侧变大的形状。对烧结性接合构件2进行烧结处理，由此烧结性接合构件2收缩，在烧结性接合构件2的侧面部24中，烧结性接合构件2的上表面和下表面之间倾斜，在用虚线C示出的直线和烧结性接合构件2的下表面(第一电路层3的上表面)之间，具有倾斜(锥形)角度20。作为烧结性接合构件2的侧面部24的倾斜的形状，可以是直线，也可以是带有曲率的形状。另外，根据烧结性接合构件2的倾斜角20的角度，也有在半导体元件1的外周端部中，不是明确地形成平坦部23，而是侧面部24成为连结半导体元件1的上表面和下表面的形状的情况。
特别地，在烧结性接合构件2的侧面部24中，在制造工序中，不与半导体元件1接合的烧结性接合构件2的上表面侧相比于与第一电路层3接合的下表面侧，烧结性接合构件2容易收缩，因此形成锥形角20。烧结性接合构件2的侧面部(端面)24的锥形角20是45度以上且不足90度，至少烧结性接合构件2的外周的角部设为带有圆形的形状。如果锥形角20成为45度以下，则烧结性接合构件2的上表面和下表面处的收缩之差变大，可能成为烧结性接合构件2的下表面和第一电路层3的上表面的接合部处的烧结性接合构件2的剥离的主要原因。因此，作为锥形角20的角度，从确保接合部处的可靠性的观点，45度以上较好。进一步地，烧结性接合构件2的平坦部23的宽度(长度)在1mm至2mm左右的范围，能够根据应用的功率模块的额定(电压)适当选择。
图4中，烧结性接合构件2在烧结性接合构件2的上表面具有凹处(凹部)18。基本的结构与图3相同，然而在图4中，在烧结性接合构件2的与半导体元件1的背面侧相接的区域形成有凹处18。半导体元件1的背面与烧结性接合构件2在凹处18部分接合。半导体元件1的背面电极与烧结性接合构件2的上表面的凹处18的下表面和侧面接合。烧结性接合构件2的上表面的凹处18是在将半导体元件1配置在烧结性接合构件2的上表面后进行加压处理，由此半导体元件1被按压在烧结性接合构件2的上表面来形成的。
图5示出图3、图4所示的结构的平面(上表面)结构示意图。图5是上方视图(俯视)，因此图4所示的凹处18与半导体元件1的周边部重叠。图5中，在比半导体元件1的周边部更外侧，配置有烧结性接合构件2的平坦部23和从平坦部23接续的烧结性接合构件2的侧面部24。
图3、图4和图5所示的烧结性接合构件2与通常用作接合构件的焊料同样地，即使无加压也能够接合，另外，即使5MPa以下的加压力也能够接合。烧结性接合构件2根据该加压力的大小，被确定是如图4所示那样在烧结性接合构件2的上表面形成凹处18，还是如图3所示那样成为上表面平坦的形状。烧结性接合构件2的厚度作为烧结后的厚度是40μm左右。另外，在图3、图4、图5中，为了简单化，未记载构成图1所示的烧结性接合构件2的金属粒子和空隙。
图6是示出实施方式1中的其他功率模块的截面结构示意图。图中，功率模块200具备半导体元件1、烧结性接合构件2、绝缘基板31、底板8、密封构件9、接合线10、引线端子12和作为接合层的绝缘基板下接合构件21。
在图1和图2所示的功率模块100中，作为绝缘基板11，包括第一电路层3、第二电路层4、第一金属层7、第二金属层6和绝缘层5(陶瓷基板)，然而在图6所示的功率模块200中，不设置第二电路层4和第二金属层6，而是设为将作为电路层的第一电路层3和作为金属层的第一金属层7直接接合到绝缘层5的结构。
另外，在功率模块200中，绝缘基板31和底板8使用绝缘基板下接合构件21接合。作为绝缘基板下接合构件21，能够使用无铅(Pb)焊料、含铅焊料等接合。另外，与烧结性接合构件2相同地，作为绝缘基板下接合构件21的原材料，还能够使用银(Ag)纳米粒子膏或铜(Cu)纳米粒子膏或者在这些粒子中包含微小尺寸的粒子的烧结膏材料。进一步地，也可以如图1所示不使用绝缘基板下接合构件21，而是通过直接接合法或者活性金属接合法接合。另外，在本结构的情况下，第一电路层是电路层。
以这样的结构制作的功率模块100、200的各构件的弹性模量有如下关系：按照半导体元件1、将底板8和绝缘基板11接合的结构体(基板)、接合线10、烧结性接合构件2的次序变大。
这样，烧结性接合构件2大于半导体元件1的背面侧的外周，并设置了从半导体元件1的背面侧的外周向外侧突出的平坦部23，因此能够使用烧结性接合构件2的平坦部23将在半导体元件1产生的热扩散。其结果，能够提高自半导体元件1的散热性，并能够提高功率模块100、200的可靠性。
另外，半导体元件1和绝缘基板11是使用比半导体元件1的背面侧的外周的大小大的外周(尺寸)的烧结性接合构件2接合的。其结果，能够将半导体元件1的端部和烧结性接合构件2的端部分开地配置，因此应力不会集中到烧结性接合构件2的端部，从烧结性接合构件2的端部向烧结性接合构件2的内部的裂纹的侵入被抑制。
进一步地，半导体元件1相比于其他构件间的接合，使用非常柔软的烧结性接合构件2与绝缘基板11接合，因此用柔软的烧结性接合构件2接合到接合了硬的绝缘基板11和底板8的结构体(基板)的半导体元件1不受损伤，能够延长接合线10的接合部中的接合的寿命。
另外，烧结性接合构件2在烧结性接合构件2的表面也形成有空隙，通过该空隙，产生锚固效应，烧结性接合构件2的表面和密封构件9的密合性提高，由此能够抑制密封构件9的剥离。
接下来，说明如上述那样构成的本实施方式1的功率模块100的制造方法。
首先，准备成为功率模块100的底面部的底板8(底板准备工序)。
接下来，准备在绝缘层5的上表面设置了第一电路层3和第二电路层4并在下表面设置了第一金属层7和第二金属层6的绝缘基板11(绝缘基板准备工序)。第一电路层3和第二电路层4、第一金属层7和第二金属层6与绝缘层5的接合通过钎焊等进行。
接下来，在绝缘基板11的上表面侧的第一电路层3的上表面，使用烧结性接合构件2接合半导体元件1(半导体元件接合工序)。烧结性接合构件2通过印刷法、点胶机等涂敷到第一电路层3的上表面，虽然根据使用的粒子径而有所不同，但是通过与以往的Sn系焊料材料同等级别的加热温度下的烧结处理形成。烧结性接合构件2按照比半导体元件1更大的尺寸涂敷，在将半导体元件1装载到烧结性接合构件2的上表面后，将半导体元件1和第一电路层3接合。烧结性接合构件2涂敷到第一电路层3的上表面，涂敷后，通过烧结处理成为40μm左右的厚度。将半导体元件1接合到绝缘基板11的上表面侧的第一电路层3的上表面之后，使用直接接合法或活性金属接合法将底板8的上表面和绝缘层5的下表面侧的第一金属层7的下表面接合(绝缘基板接合工序)，由此将底板8和绝缘基板11接合。
将半导体元件1配置到绝缘基板11的上表面侧的第一电路层3的上表面后，使用作为布线构件的接合线10将作为半导体元件1的表面电极的主电极13和控制信号电极14与作为端子构件的引线端子12电连接(布线构件形成工序)。
使用接合线10形成布线之后，使用密封构件9密封半导体元件1、绝缘基板11和接合线10。此时，关于引线端子12，一端侧配置在密封构件9内部，另一端侧从密封构件9的侧面露出而用密封构件9密封(密封工序)。
经过以上的主要制造工序，能够制造如图1所示的功率模块100。另外，在功率模块200中，也能够以使绝缘基板11的结构成为绝缘基板31的结构的方式形成电路层和金属层，由此进行制造。
在如以上那样构成的功率模块100、200中，烧结性接合构件2的外周大于半导体元件1的背面侧的外周，设置了从半导体元件1的背面侧的外周向外侧突出的平坦部23，因此能够使在半导体元件1产生的热扩展至烧结性接合构件2的平坦部23并扩散。其结果，能够提高自半导体元件1的散热性，并能够提高功率模块100、200的可靠性。
另外，半导体元件1和绝缘基板11使用比半导体元件1的背面侧的外周更大的外周(尺寸)的烧结性接合构件2接合。其结果，能够使半导体元件1的端部和烧结性接合构件2的端部分开地配置，因此应力不会集中到烧结性接合构件2的端部，从烧结性接合构件2的端部向烧结性接合构件2的内部的裂纹的侵入被抑制。
进一步地，半导体元件1相比于其他构件间的接合，使用非常柔软的烧结性接合构件2与绝缘基板11接合，因此用柔软的烧结性接合构件2接合到接合了硬的绝缘基板11和底板8的结构体(基板)的半导体元件1不受损伤，能够延长接合线10的接合部中的接合的寿命。
另外，烧结性接合构件2在烧结性接合构件2的表面也形成有空隙，通过该空隙，产生锚固效应，烧结性接合构件2的表面和密封构件9的密合性提高，由此能够抑制密封构件9的剥离。
实施方式2。
本实施方式2中，不同之处是在实施方式1中使用的烧结性接合构件2的上表面设置了多个半导体元件1。这样，将多个半导体元件1配置在大于多个半导体元件1的配置区域并具有从半导体元件1的配置区域向外侧突出的平坦部23的烧结性接合构件2的同一个上表面，因此在半导体元件1产生的热能够扩展至烧结性接合构件2的平坦部23并扩散。其结果，能够提高自半导体元件1的散热性，并能够提高功率模块300的可靠性。另外，关于其其他方面，与实施方式1是同样的，因此省略详细的说明。
图7是示出实施方式2中的功率模块的截面结构示意图。图8是示出实施方式2中的功率模块的平面结构示意图。图7是图8的单点划线BB处的截面结构示意图。图28是透过密封构件9，从上表面看功率模块300的平面结构示意图。
图中，功率模块300具备多个半导体元件1、烧结性接合构件2、绝缘基板11、底板8、密封构件9、接合线10和引线端子12。
实施方式1中，在半导体元件1是1个的情况下或者是多个的情况下，均设为对各个半导体元件1分别单独地设置烧结性接合构件2的结构，但是在本实施方式2中，使用以比多个半导体元件1的接合区域更大的区域成为一体的1个烧结性接合构件2，将多个半导体元件1接合到绝缘基板11的第一电路层3的上表面。在多个半导体元件1之间，烧结性接合构件2的上表面露出，密封构件9在多个半导体元件1之间也能够与形成了空隙的烧结性接合构件2的上表面直接相接，因此与密封构件9的密合性提高，能够抑制密封构件9的剥离。
如图7、图8所示，在经由烧结性接合构件2将多个半导体元件1配置在第一电路层3的上表面的情况下，从将多个半导体元件1的各背面包围的外周突出的平坦部23的宽度(长度)是1mm至2mm左右，能够根据应用的功率模块的额定来适当选择。另外，作为多个半导体元件1的间隔，需要与烧结性接合构件2的平坦部23相同的尺寸。例如，如图8所示，在上方视图(俯视)中，在烧结性接合构件2的上表面上配置纵向2个、横向4个共计8个20mm见方的半导体元件1的情况下，作为烧结性接合构件2的大小，成为纵向46mm、横向90mm左右的区域。由此，能够确保各半导体元件1间的绝缘性并配置多个半导体元件1。
这样，在使用了多个半导体元件1的情况下，烧结性接合构件2也设置为具有比多个半导体元件1的接合区域更大的区域的上表面，因此能够使在多个半导体元件1产生的热扩散并散热，能够提高功率模块300的散热性，并能够提高功率模块300的可靠性。
另外，用1个烧结性接合构件2将多个半导体元件1接合，因此能够将半导体元件1的端部和烧结性接合构件2的端部配置在不同的位置，降低向位于半导体元件1的端部的烧结性接合构件2的应力集中，向烧结性接合构件2的裂纹的产生被抑制。
在如以上那样构成的功率模块300中，烧结性接合构件2大于多个半导体元件1的接合区域的外周，并设置了从半导体元件1的背面侧的外周向外侧突出的平坦部23，因此能够使在半导体元件1中产生的热扩展至烧结性接合构件2的平坦部23并扩散。其结果，能够提高自半导体元件1的散热性，并能够提高功率模块300的可靠性。
另外，多个半导体元件1和绝缘基板11使用比多个半导体元件1的接合区域更大的外周(尺寸)的烧结性接合构件2接合。其结果，能够使半导体元件1的端部和烧结性接合构件2的端部分开地配置，因此应力不会集中到烧结性接合构件2的端部，从烧结性接合构件2的端部向烧结性接合构件2的内部的裂纹的侵入被抑制。
进一步地，多个半导体元件1相比于其他构件间的接合，使用非常柔软的烧结性接合构件2与绝缘基板11接合，因此用柔软的烧结性接合构件2接合到接合了硬的绝缘基板11和底板8的结构体(基板)的多个半导体元件1不受损伤，能够延长接合线10的接合部处的接合的寿命。
另外，烧结性接合构件2在烧结性接合构件2的表面也形成有空隙，通过该空隙，产生锚固效应，烧结性接合构件2的表面和密封构件9的密合性提高，由此能够抑制密封构件9的剥离。
实施方式3。
本实施方式3中，不同之处是代替在实施方式1、2中使用的接合线10和引线端子12，设置了主端子接合层16和作为板状金属构件的主端子15。这样，在将形成于半导体元件1的上表面的电极和外部的连接结构设为主端子接合层16和主端子15的结构的情况下，也将多个半导体元件1配置在大于多个半导体元件1的配置区域并具有从半导体元件1的配置区域突出的平坦部23的烧结性接合构件2的上表面，因此在半导体元件1产生的热能够扩展至烧结性接合构件2的平坦部23并扩散。其结果，能够提高自半导体元件1的散热性，并能够提高功率模块400的可靠性。另外，关于其他方面，与实施方式1、2是同样的，因此省略详细的说明。
图9是示出实施方式3中的功率模块的截面结构示意图。
图中，功率模块400具备多个半导体元件1、烧结性接合构件2、绝缘基板11、底板8、密封构件9、作为板状金属构件的主端子15和主端子接合层16。
图9中，在本实施方式3中，半导体元件1的电极和外部的连接方式是从使用接合线10和引线端子12的方式变更为使用半导体元件1的(主)电极上形成的主端子接合层16和主端子15的被称为DLB结构(Direct Lead Bonding：直接引线接合方式)的方式。如图9所示，主端子15经由主端子接合层16与未图示的半导体元件1的主电极接合。主端子15配置在密封构件9的外部，在与主端子接合层16接合的部分，形成有主端子15的突起部25。作为突起部25的形状，可以是从主端子15的下表面侧朝向半导体元件1的上表面的电极伸长的形状，也可以是从主端子15的侧面侧朝向半导体元件1的上表面的电极伸长的形状。
作为主端子15的材料，是导电性好的材料即可，例如能够使用以铜(Cu)、铝(Al)等为主成分的合金或者用于使线膨胀系数接近于半导体元件1的复合材料等。然而，用于主端子15的材料不限定于这些。在图9中虽然未图示，然而控制信号端子与主端子15比较，电流几乎不流动，因此可以使用DLB结构，但是也可以使用设为接合线10的结构。另外，作为半导体元件1，也存在没有控制信号端子的情况。
作为主端子接合层16的原材料，例如能够使用Ag纳米粒子膏或Cu纳米粒子膏或者在这些粒子中包含微小尺寸的粒子的烧结膏材料来接合。另外，也能够使用含有铅(Pb)和锡(Sn)的高温用焊料或者无铅焊料等。进一步地，作为主端子接合层16的材料，也能够使用包含Ag粒子或Cu粒子和环氧树脂的导电性粘接材料。然而，作为用于主端子接合层16的材料，不限定于这些。
另外，在主端子15不具有突起部25而在密封构件9的内部与主端子接合层16接合的形式的结构的情况下也能够同样使用。另外，主端子15可以包含突起部25而由密封构件9密封并配置在密封构件9的内部，在该情况下，主端子15的形成了突起部25的端部侧配置在密封构件9内部。形成了突起部25的主端子15的相反侧的端部从密封构件9的侧面向密封构件9的外部露出(突出)地配置。
这样，多个半导体元件1配置在大于多个半导体元件1的配置区域并具有从多个半导体元件1的配置区域突出的平坦部23的烧结性接合构件2的上表面，因此不论各个半导体元件1的配置位置，烧结性接合构件2的厚度均相同，能够使多个半导体元件1的上表面的高度对齐，因此即使是将向半导体元件1的主电极13的接合设为DLB结构的主端子15，也能够容易地同时连接多个半导体元件1。
图10是示出实施方式3中的其他功率模块的截面结构示意图。图中，功率模块500具备多个半导体元件1、烧结性接合构件2、绝缘基板11、底板8、密封构件9、作为板状金属构件的主端子15、主端子接合层16、应力缓冲层22和在第一电路层3的上表面形成的凹处(凹部)17。
图10中，作为与外部的连接结构，与图9同样地使用DLB结构。然而，作为半导体元件1的电极和外部的连接方法，也可以使用接合线来连接。在与烧结性接合构件2的外周的端部对应的部位的第一电路层3的上表面的部分，形成有第一电路层的凹部17。在第一电路层3的凹部17的内部，配置并填充有烧结性接合构件2。因此，通过还考虑第一电路层3的凹部17的内部的烧结性接合构件2，能够有效地使与烧结性接合构件2的端部相应的部位的烧结性接合构件2的厚度变厚。
另外，图10中，为了使半导体元件1和主端子15的线膨胀系数匹配，在半导体元件1和主端子15之间隔着应力缓冲层22，在应力缓冲层22的上下配置主端子接合层16来将半导体元件1和主端子15接合。然而，在半导体元件1和主端子15的线膨胀系数没有大的差异的情况下，可以与图9同样地，去掉应力缓冲层22，将半导体元件1和主端子15通过主端子接合层16接合。
这样，在与烧结性接合构件2的端部对应的部位的第一电路层3的上表面设置了凹部17，因此烧结性接合构件2的端部处的厚度增加，能够缓和烧结性接合构件2的端部中的应力，并能够抑制烧结性接合构件2的剥离、裂纹的产生。
图11是示出实施方式3中的其他功率模块的截面结构示意图。图中，功率模块600具备多个半导体元件1、烧结性接合构件2、绝缘基板11、底板8、密封构件9、作为板状金属构件的主端子15、主端子接合层16和在第一电路层3的端部的侧面形成的烧结性接合构件2的突出部26。
图11中，不同之处是图9所示的烧结性接合构件2还形成在第一电路层3的侧面，由此覆盖第一电路层3上表面和侧面。烧结性接合构件2的突出部26配置为与第一电路层3的侧面和第二电路层4的上表面相接。此处，示出了多个半导体元件1接合的状态，然而在半导体元件1是1个的情况下或者在没有第二电路层、第二金属层的情况下，也能够是同样的结构。在没有第二电路层4的情况下，烧结性接合构件2的突出部26配置为与绝缘层5的上表面相接。进一步地，烧结性接合构件2还形成在第一电路层3的侧面，因此第一电路层3的宽度(外周)设定为小于第一金属层7的宽度(外周)。
这样，烧结性接合构件2覆盖第一电路层3的包含上表面和侧面的露出的整体，因此成为在与密封构件9接触的面的表面也形成了空隙的状态。因此，即便没有使第一电路层3的表面粗糙化(粗糙)而形成凹凸，也能够通过烧结性接合构件2的表面的空隙取得锚固效果，并提高烧结性接合构件2和密封构件9的密合性。
在如以上那样构成的功率模块400、500、600中，烧结性接合构件2大于多个半导体元件1的接合区域的外周并设置了从半导体元件1的背面侧的外周向外侧突出的平坦部23，因此能够使在半导体元件1产生的热扩展至烧结性接合构件2的平坦部23并扩散。其结果，能够提高自半导体元件1的散热性，并能够提高功率模块400、500、600的可靠性。
另外，多个半导体元件1和绝缘基板11使用比多个半导体元件1的接合区域更大的外周(尺寸)的烧结性接合构件2接合。其结果，能够使半导体元件1的端部和烧结性接合构件2的端部分开地配置，因此应力不会集中到烧结性接合构件2的端部，从烧结性接合构件2的端部向烧结性接合构件2的内部的裂纹的侵入被抑制。
进一步地，多个半导体元件1相比于其他构件间的接合，使用非常柔软的烧结性接合构件2与绝缘基板11接合，因此用柔软的烧结性接合构件2接合到接合了硬的绝缘基板11和底板8的结构体(基板)的多个半导体元件1不受损伤，能够延长接合线10的接合部中的接合的寿命。
另外，烧结性接合构件2在烧结性接合构件2的表面也形成有空隙，通过该空隙，产生锚固效应，烧结性接合构件2的表面和密封构件9的密合性提高，由此能够抑制密封构件9的剥离。
进一步地，在烧结性接合构件2中，在与烧结性接合构件2的端部对应的部位的第一电路层3的上表面设置了凹部17，因此烧结性接合构件2的端部的厚度增加，能够缓和烧结性接合构件2的端部中的应力，能够抑制烧结性接合构件2的剥离、裂纹的产生。
另外，烧结性接合构件2具有烧结性接合构件2的突出部26，覆盖第一电路层3的包含上表面和侧面的露出的整体，因此成为在与密封构件9接触的面的表面也形成了空隙的状态。因此，即便没有使第一电路层3的表面粗糙而形成凹凸，也能够通过锚固效果提高与密封构件9的密合性。
实施方式4。
本实施方式4将上述的实施方式1至3的任意的功率模块应用于电力变换装置。本公开不限定于特定的电力变换装置，然而以下作为实施方式4，说明将本公开应用于三相逆变器的情况。
图12是示出应用了实施方式4中的电力变换装置的电力变换系统的结构的框图。
图12所示的电力变换系统具备电源1000、电力变换装置2000、负载3000。电源1000是直流电源，对电力变换装置2000提供直流电力。电源1000能够通过各种方式构成，例如能够包括直流系统、太阳能电池、蓄电池，也可以包括连接到交流系统的整流电路、AC/DC转换器等。另外，电源1000也可以包括将从直流系统输出的直流电力变换成规定的电力的DC/DC转换器。
电力变换装置2000是在电源1000和负载3000之间连接的三相逆变器，将从电源1000提供的直流电力变换为交流电力，向负载3000提供交流电力。电力变换装置2000如图12所示具备将从电源1000输入的直流电力变换为交流电力并输出的主变换电路2001以及将控制主变换电路2001的控制信号输出到主变换电路2001的控制电路2003。
负载3000是通过从电力变换装置2000提供的交流电力驱动的三相电动机。另外，负载3000不限于特定的用途，是装载于各种电气设备的电动机，例如用作面向混合动力汽车、电动汽车、铁道车辆、电梯、空调设备的电动机等。
以下，详细说明电力变换装置2000。主变换电路2001具备内置于功率模块2002的开关元件和续流二极管(未图示)，通过开关元件进行开关，将从电源1000提供的直流电力变换为交流电力并提供给负载3000。主变换电路2001的具体的电路结构有各种结构，然而本实施方式的主变换电路2001是2电平三相全桥电路，能够包含6个开关元件和与各个开关元件反并联连接的6个续流二极管。主变换电路2001包括与内置各开关元件、各续流二极管等的上述的实施方式1至3的某一个相当的功率模块2002。关于6个开关元件，每2个开关元件串联连接来构成上下臂，各上下臂构成全桥电路的各相(U相、V相、W相)。各上下臂的输出端子即主变换电路2001的3个输出端子连接到负载3000。
另外，主变换电路2001具备驱动各开关元件的驱动电路(未图示)。驱动电路可以内置于功率模块2002，也可以是与功率模块2002单独地具备驱动电路的结构。驱动电路生成驱动主变换电路2001的开关元件的驱动信号，并提供到主变换电路2001的开关元件的控制电极。具体地，根据来自后述的控制电路2003的控制信号，将使开关元件成为导通状态的驱动信号和使开关元件成为截止状态的驱动信号输出到各开关元件的控制电极。在将开关元件维持在导通状态的情况下，驱动信号是开关元件的阈值电压以上的电压信号(导通信号)，在将开关元件维持在截止状态的情况下，驱动信号成为开关元件的阈值电压以下的电压信号(截止信号)。
控制电路2003控制主变换电路2001的开关元件，以向负载3000提供期望的电力。具体地，基于应向负载3000提供的电力，计算出主变换电路2001的各开关元件应成为导通状态的时间(导通时间)。例如，能够通过根据应输出的电压来调制开关元件的导通时间的PWM控制，控制主变换电路2001。另外，向主变换电路2001具备的驱动电路输出控制指令(控制信号)，以对在各时间点应成为导通状态的开关元件输出导通信号，向应成为截止状态的开关元件输出截止信号。驱动电路根据该控制信号，向各开关元件的控制电极输出导通信号或截止信号作为驱动信号。
在如以上那样构成的本实施方式4的电力变换装置中，作为主变换电路2001的功率模块2002，应用实施方式1至3的功率模块，因此能够实现可靠性提高。
本实施方式中，说明了对2电平三相逆变器应用本公开的例子，但是本公开不限于此，能够应用于各种电力变换装置。本实施方式中，设为2电平电力变换装置，但是也可以是3电平、多电平电力变换装置，在对单相负载提供电力的情况下，也可以对单相逆变器应用本公开。另外，在对直流负载等提供电力的情况下，也能够对DC/DC转换器、AC/DC转换器等应用本公开。
另外，应用了本公开的电力变换装置不限定于上述的负载是电动机的情况，例如，也能够用作放电加工机、激光加工机、感应加热烹调器、非接触供电系统的电源装置等，进一步地，也能够用作太阳能发电系统、蓄电系统等的功率调节器。
特别地，在将SiC用于半导体元件1的情况下，半导体元件1为了发挥其特征，与Si时比较，以更高的温度动作。在装载SiC器件的功率模块中，要求更高的可靠性，因此实现高可靠性的功率模块这样的本公开的优点更有效。
应认为上述实施方式在所有方面均是示例而非制限性的。本公开的范围不是由上述的实施方式的范围示出，而是由权利要求书示出，并包含与权利要求书等同的意义和范围内的所有改变。另外，也可以将上述的实施方式所公开的多个结构要素适当地组合。

Claims (14)

1.一种功率模块，具备：
半导体元件；
绝缘基板，具有绝缘层，在所述绝缘层的上表面设置了电路层并在下表面设置了金属层；以及
烧结性接合构件，将所述半导体元件的背面和所述绝缘层的上表面侧的所述电路层的上表面接合，具有比所述半导体元件的背面侧的外周更大的上表面。
2.根据权利要求1所述的功率模块，其中，
所述烧结性接合构件的上表面具有比所述半导体元件的外周更向外侧突出的平坦部。
3.根据权利要求2所述的功率模块，其中，
所述烧结性接合构件具有侧面部，在所述侧面部中，从外侧向内侧，所述烧结性接合构件的上表面和所述烧结性接合构件的下表面的距离变大。
4.根据权利要求1至3中的任一项所述的功率模块，具备：
底板，与所述绝缘基板的下表面接合；以及
布线构件，接合到所述半导体元件的正面，
弹性模量以所述半导体元件、接合所述底板和所述绝缘基板的结构体、所述布线构件、所述烧结性接合构件的次序变大。
5.根据权利要求4所述的功率模块，其中，
所述绝缘层的下表面侧的所述金属层和所述底板直接接合。
6.根据权利要求4所述的功率模块，其中，
所述绝缘层的下表面侧的所述金属层和所述底板经由接合层接合。
7.根据权利要求4至6中的任一项所述的功率模块，其中，
所述布线构件是接合线或板状金属构件。
8.根据权利要求1至6中的任一项所述的功率模块，其中，
所述烧结性接合构件的热阻小于所述绝缘层、所述绝缘层的上表面侧的所述电路层和所述绝缘层的下表面侧的所述金属层的热阻。
9.根据权利要求1至7中的任一项所述的功率模块，其中，
所述半导体元件有多个，多个所述半导体元件配置在同一个所述烧结性接合构件的上表面。
10.根据权利要求1至8中的任一项所述的功率模块，其中，
所述烧结性接合构件包含银或铜的金属粒子。
11.根据权利要求1至10中的任一项所述的功率模块，其中，
在所述绝缘基板的上表面侧的所述电路层的上表面形成有凹部，在所述凹部内配置有所述烧结性接合构件。
12.根据权利要求1至11中的任一项所述的功率模块，其中，
所述烧结性接合构件还形成在所述绝缘层的上表面侧的所述电路层的侧面。
13.根据权利要求1至12中的任一项所述的功率模块，其中，
所述电路层具有第一电路层和第二电路层，所述金属层具有第一金属层和第二金属层，所述第一电路层的大小小于所述第二电路层的大小，所述第一金属层的大小小于所述第二金属层的大小。
14.一种电力变换装置，具备：
主变换电路，具有权利要求1至13中的任一项所述的功率模块，该主变换电路将输入的电力进行变换并输出；以及
控制电路，将控制所述主变换电路的控制信号输出到所述主变换电路。
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JP7369508B2 (ja) * 2017-08-04 2023-10-26 デンカ株式会社 セラミックス回路基板
DE112018005713T5 (de) * 2017-10-30 2020-07-16 Mitsubishi Electric Corporation Leistungshalbleitereinheit und herstellungsverfahren für eine leistungshalbleitereinheit
JP7175095B2 (ja) * 2018-03-28 2022-11-18 三菱電機株式会社 半導体装置

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