WO2010058727A1 - 電子部品の製造方法 - Google Patents
電子部品の製造方法 Download PDFInfo
- Publication number
- WO2010058727A1 WO2010058727A1 PCT/JP2009/069207 JP2009069207W WO2010058727A1 WO 2010058727 A1 WO2010058727 A1 WO 2010058727A1 JP 2009069207 W JP2009069207 W JP 2009069207W WO 2010058727 A1 WO2010058727 A1 WO 2010058727A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- adhesive
- semi
- ultraviolet
- meth
- cured layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B25/00—Layered products comprising a layer of natural or synthetic rubber
- B32B25/12—Layered products comprising a layer of natural or synthetic rubber comprising natural rubber
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B25/00—Layered products comprising a layer of natural or synthetic rubber
- B32B25/14—Layered products comprising a layer of natural or synthetic rubber comprising synthetic rubber copolymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/16—Layered products comprising a layer of synthetic resin specially treated, e.g. irradiated
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
- B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
- B32B27/283—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polysiloxanes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
- B32B27/308—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising acrylic (co)polymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/38—Layered products comprising a layer of synthetic resin comprising epoxy resins
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/40—Layered products comprising a layer of synthetic resin comprising polyurethanes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2270/00—Resin or rubber layer containing a blend of at least two different polymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2274/00—Thermoplastic elastomer material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/21—Anti-static
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/14—Semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83856—Pre-cured adhesive, i.e. B-stage adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01011—Sodium [Na]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01025—Manganese [Mn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01075—Rhenium [Re]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
Definitions
- the present invention relates to a method of manufacturing an electronic component when a semiconductor wafer with an adhesive semi-cured layer is diced on a chip.
- One method of manufacturing electronic components includes a bonding step of attaching an electronic component assembly having a plurality of circuit patterns formed on a wafer or an insulating substrate to an adhesive sheet, and an attached wafer or electronic component assembly.
- a cutting / separation process for cutting into individual chips, an ultraviolet irradiation process for irradiating ultraviolet rays from the adhesive sheet side to reduce the adhesive strength of the adhesive layer, and picking up the cut chips from the adhesive sheet
- a manufacturing method including a pickup process and a fixing process in which an adhesive is applied to the bottom surface of the picked-up chip and then the chip is fixed to a lead frame or the like with the adhesive.
- a method in which a wafer or an electronic component assembly is attached to an adhesive sheet, and the adhesive sheet is further fixed to a ring frame, and then cut into individual chips and separated (diced).
- the pressure sensitive adhesive sheet having the function of an adhesive sheet for dicing and the function of an adhesive for fixing a chip to a lead frame or the like (die attach film integrated type)
- a method using a sheet has been proposed (see Patent Document 1 and Patent Document 2).
- the step of applying the adhesive after dicing can be omitted.
- the die attach film-integrated sheet is excellent in controlling the thickness of the adhesive portion and suppressing the protrusion of the adhesive as compared with a method using an adhesive for bonding the chip and the lead frame.
- the die attach film integrated sheet is used for manufacturing electronic components such as a chip size package, a stack package, and a system in package.
- a manufacturing method that can dispense with an adhesive application step after dicing by previously applying a paste adhesive on a semiconductor wafer and semi-curing it into a sheet by heating or ultraviolet irradiation to form an adhesive semi-cured layer There is.
- the chip size has become larger and thinner, and the number of cases in which it is difficult to pick up chips after dicing has increased.
- the dicing line has a mixture of the adhesive semi-cured layer and the pressure-sensitive adhesive layer. Even when irradiation was performed and the adhesive strength was sufficiently reduced, the ease of peeling at the time of pick-up was inferior, which sometimes caused pick-up failure.
- the present invention has been made in view of the above circumstances, and the peeling between the pressure-sensitive adhesive sheet and the adhesive semi-cured layer at the time of pick-up is easy, and thus the chip pick-up work after dicing can be easily performed.
- a method for dicing a semiconductor wafer is provided.
- a paste adhesive is applied to the back surface of a semiconductor wafer, and the paste adhesive is semi-cured into a sheet by heating or ultraviolet irradiation to form an adhesive semi-cured layer;
- An adhesive sheet in which an ultraviolet curable pressure-sensitive adhesive is laminated on a film is attached to the adhesive semi-cured layer, an ultraviolet irradiation process for irradiating the ultraviolet curable adhesive with ultraviolet light, and an adhesive sheet.
- the ultraviolet curable pressure-sensitive adhesive comprises a (meth) acrylic acid ester polymer, a urethane acrylate oligomer having four or more vinyl groups, an ultraviolet polymerization initiator, a silicone graft polymer, At least.
- the adhesive semi-cured layer includes at least an epoxy resin, a polyimide resin, an acrylic resin, and a silicone resin, and the adhesive semi-cured layer has a thickness of 10 ⁇ m or more.
- the adhesive force of the ultraviolet curable adhesive is reduced in advance while improving the cohesive force.
- the adhesive semi-cured layer and the pressure-sensitive adhesive sheet Mixing of the ultraviolet curable pressure-sensitive adhesive layer in the dicing line can be reduced. For this reason, pick-up failure can be suppressed.
- another ultraviolet irradiation step may be provided as in the conventional method.
- the monomer means a so-called monomer itself or a structure derived from the monomer. Unless otherwise indicated, parts and% in this specification are based on mass.
- the (meth) acryloyl group is a general term for an acryloyl group and a methacryloyl group.
- a compound containing (meth) such as (meth) acrylic acid is a general term for a compound having “meta” in the name and a compound not having “meta”.
- the number of functional groups of the urethane acrylate oligomer which is an ultraviolet polymerizable compound, refers to the number of vinyl groups per urethane acrylate oligomer molecule.
- the light source of ultraviolet rays is not particularly limited, and known ones can be used.
- Examples of the ultraviolet light source include black light, low pressure mercury lamp, high pressure mercury lamp, super high pressure mercury lamp, metal halide lamp, and excimer lamp.
- Irradiation light amount of the ultraviolet is not particularly limited, the design of the ultraviolet-curable pressure-sensitive adhesive may be appropriately selected, in general preferably less than 5 mJ / cm 2 or more 1000 mJ / cm 2. This is because if the amount of irradiation light is small, the curing of the UV curable adhesive is insufficient and the pick-up property tends to be inferior, and if the amount of irradiation light is large, workability deteriorates due to prolonged UV irradiation time.
- UV curable adhesive layer A conventionally well-known thing can be employ
- the components of the UV-curable adhesive and the action when irradiated with UV light are the three-dimensional UV-polymerizable compounds that have an unsaturated bond with the UV polymerization initiator that has received UV light and exerts adhesive strength with the base polymer as the main agent. It is made to have a network structure and is cured (adhesive strength is reduced).
- the base polymer is preferably a (meth) acrylic acid ester polymer
- the ultraviolet polymerizable compound is preferably a urethane acrylate oligomer having 4 or more vinyl groups, and further includes an ultraviolet polymerization initiator and a silicone graft. It is preferable to contain a polymer.
- the base polymer generally known (meth) acrylic acid ester polymers, rubber adhesives, and the like can be used.
- (Meth) acrylate polymer is a polymer obtained by polymerizing a (meth) acrylate monomer. Further, the (meth) acrylic acid ester polymer may contain a vinyl compound monomer other than the (meth) acrylic acid ester monomer.
- Examples of the (meth) acrylic acid ester monomer include butyl (meth) acrylate, 2-butyl (meth) acrylate, t-butyl (meth) acrylate, pentyl (meth) acrylate, octyl (meth) acrylate, 2- Ethylhexyl (meth) acrylate, nonyl (meth) acrylate, decyl (meth) acrylate, lauryl (meth) acrylate, methyl (meth) acrylate, ethyl (meth) acrylate, isopropyl (meth) acrylate, tridecyl (meth) acrylate, myristyl ( (Meth) acrylate, cetyl (meth) acrylate, stearyl (meth) acrylate, cyclohexyl (meth) acrylate, isobornyl (meth) acrylate, dicyclopentanyl (meth) acryl
- vinyl compound monomer one kind of functional group consisting of hydroxyl group, carboxyl group, epoxy group, amide group, amino group, methylol group, sulfonic acid group, sulfamic acid group, and (phosphite) ester group What has the above can be used conveniently.
- Examples of the vinyl compound monomer having a hydroxyl group include vinyl alcohol.
- vinyl compound monomer having a carboxyl group examples include (meth) acrylic acid, crotonic acid, maleic acid, maleic anhydride, itaconic acid, fumaric acid, acrylamide N-glycolic acid, and cinnamic acid.
- Examples of the vinyl compound monomer having an epoxy group include allyl glycidyl ether and (meth) acrylic acid glycidyl ether.
- Examples of the vinyl compound monomer having an amide group include (meth) acrylamide.
- Examples of the vinyl compound monomer having an amino group include N, N-dimethylaminoethyl (meth) acrylate.
- Examples of the vinyl compound monomer having a methylol group include N-methylolacrylamide.
- Emmulsion polymerization, solution polymerization, etc. can be used as the method for producing the (meth) acrylic acid ester polymer).
- an acrylic rubber that can be produced by emulsion polymerization is preferred.
- rubber adhesives examples include natural rubber, synthetic isoprene rubber, styrene butadiene rubber, styrene / butadiene block copolymer, styrene / isoprene block copolymer, butyl rubber, polyisobutylene, polybutadiene, polyvinyl ether, silicone rubber, and polyvinyl isobutyl.
- Ether chloroprene rubber, nitrile rubber, craft rubber, recycled rubber, styrene / ethylene / butylene / block copolymer, styrene / propylene / butylene / block copolymer, styrene / isoprene / block polymer, polyisobutylene / ethylene / propylene copolymer, ethylene
- vinyl acetate copolymers polyisobutylene / silicone rubber, polyvinylisobutyl ether / chloroprene, etc., and these may be used alone or as a mixture. .
- the ultraviolet polymerizable compound means a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in a molecule that can be three-dimensionally reticulated by ultraviolet irradiation, and examples thereof include acrylate compounds and urethane acrylate oligomers. .
- acrylate compound trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene glycol diacrylate, 1 , 6-hexanediol diacrylate, polyethylene glycol diacrylate, triethyl acrylate cyanurate, and commercially available oligoester acrylate.
- urethane acrylate oligomer examples include a polyol compound such as a polyester type or a polyether type, and a polyvalent isocyanate compound such as 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylene diisocyanate, and 1,4.
- a urethane acrylate oligomer having 4 or more vinyl groups is preferable.
- the compounding quantity of an ultraviolet-polymerizable compound is not specifically limited, It is preferable to set it as 20 to 200 mass parts with respect to 100 mass parts of base polymers. If the blending amount of the UV-polymerizable compound is less than 20 parts by mass, the UV-curing adhesive after UV irradiation is not sufficiently cured, and the adhesive sheet and the adhesive semi-cured layer do not easily peel off, resulting in pick-up properties. Problems may occur.
- adhesion failure may occur during heating when the die chip to which the layer is attached is mounted on the lead frame.
- the ultraviolet polymerization initiator examples include 4-phenoxydichloroacetophenone, 4-t-butyldichloroacetophenone, diethoxyacetophenone, 2-hydroxy-2-methyl-1 -Phenylpropan-1-one, 1- (4-isopropylphenyl) -2-hydroxy-2-methylpropan-1-one, 1- (4-dodecylphenyl) -2-hydroxy-2-methylpropane -1-one, 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, 1-hydroxycyclohexyl phenylketone, 2-methyl-1- [4- (methylthio) phenyl] -2- Acetophenone-based UV polymerization initiators such as morpholinopropane-1, benzoin, benzoin methyl ether, benzoin ethyl ether Benzoin-based ultraviolet polymerization initiators such as benzoin isopropyl ether, benzoin isobutyl
- the blending amount of the ultraviolet polymerization initiator is not particularly limited, but is preferably 0.1 to 15 parts by mass with respect to 100 parts by mass of the ultraviolet polymerizable compound. If the amount is too small, the curing action upon UV irradiation tends to be poor and the adhesive force tends to be insufficiently reduced. If the amount is too large, the amount tends to be excessive and the stability under heat or fluorescent light tends to be poor.
- a silicone graft polymer can be blended with the UV curable adhesive as necessary. Adoption of the silicone graft polymer can reduce the adhesion at the interface between the adhesive semi-cured layer and the ultraviolet curable pressure-sensitive adhesive.
- the silicone graft polymer is not particularly limited except that it is obtained by polymerizing a monomer having a vinyl group at the end of the silicone molecular chain (hereinafter referred to as “silicone macromonomer”).
- silicone macromonomer a silicone macromonomer homopolymer And copolymers of silicone macromonomers and other vinyl compounds.
- the silicone macromonomer a compound in which the end of the silicone molecular chain is a vinyl group such as a (meth) acryloyl group or a styryl group is preferably used.
- a (meth) acryl monomer having high compatibility with other polymers blended in the pressure-sensitive adhesive is preferable. This is because the use of a highly compatible material makes the entire pressure-sensitive adhesive homogeneous.
- the blending amount of the silicone graft polymer is not particularly limited, but is preferably 0.1 parts by mass or more and 10 parts by mass or less with respect to 100 parts by mass of the base polymer.
- the blending amount of the silicone graft polymer is less than 0.1 parts by mass, the pressure-sensitive adhesive sheet and the adhesive semi-cured layer are not easily peeled off, which may cause a problem with the pick-up property of the die chip.
- blends more than 10 mass parts the initial adhesive force may fall and it may peel from a ring frame at the time of dicing.
- a curing agent can be blended as necessary in order to arbitrarily set the initial adhesive force.
- the cohesive force is increased as an adhesive, and contamination at the time of bonding does not occur even before irradiation with ultraviolet rays (unirradiated), and removability can be obtained.
- Curing agents include isocyanate-based, epoxy-based, aziridine-based, and the like, and these may be used alone or as a mixture.
- isocyanate include polyvalent isocyanate compounds such as 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylene diisocyanate, and diphenylmethane-4.
- 4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicycloxylmethane-4,4'- Examples include diisocyanate, dicyclohexylmethane-2,4′-diisocyanate, lysine isocyanate, phenylene diisocyanate, tolylene diisocyanate, diphenyl meta diisocyanate, and cyclohexane diisocyanate.
- the ultraviolet irradiation type adhesive is generally formed with a thickness of 5 to 70 ⁇ m. This is because if it is too thick, curing by UV irradiation is delayed, and if it is too thin, the adhesive force cannot be set high.
- Conventionally known tackifier resins, fillers, anti-aging agents, softeners, stabilizers, colorants and the like can be appropriately selected and added to the pressure-sensitive adhesive.
- the pressure-sensitive adhesive sheet is produced by applying an ultraviolet irradiation type pressure-sensitive adhesive on a base film, and includes a base film and an ultraviolet irradiation type pressure-sensitive adhesive layer laminated on the base film.
- the thickness of the base film is preferably 30 ⁇ m or more, and more preferably 60 ⁇ m or more.
- the substrate film thickness is preferably 300 ⁇ m or less, and more preferably 200 ⁇ m or less.
- the material of the base film is, for example, polyvinyl chloride, polyethylene terephthalate, ethylene-vinyl acetate copolymer, ethylene-acrylic acid-acrylate film, ethylene-ethyl acrylate copolymer, thermoplastic olefin elastomer, polyethylene, polypropylene , Polypropylene copolymers, ethylene-acrylic acid copolymers, and ethylene- (meth) acrylic acid copolymers and ethylene- (meth) acrylic acid- (meth) acrylic acid ester copolymers with metal ions.
- an ionomer resin as the material for the base film.
- An ionomer resin obtained by crosslinking a copolymer having an ethylene unit, a (meth) acrylic acid unit, and a (meth) acrylic acid alkyl ester unit with a metal ion such as Na + , K + , or Zn 2+ has a beard shape. This is preferable because it has the effect of suppressing the generation of cutting waste.
- Examples of the base film forming method include a calendar forming method, a T-die extrusion method, an inflation method, and a casting method.
- the method of forming an ultraviolet irradiation type pressure-sensitive adhesive layer on a base film to form a pressure-sensitive adhesive sheet is, for example, applying a pressure-sensitive adhesive on the base film with a coater such as a gravure coater, comma coater, bar coater, knife coater, or roll coater.
- a coater such as a gravure coater, comma coater, bar coater, knife coater, or roll coater.
- the adhesive may be printed on the base film by letterpress printing, intaglio printing, planographic printing, flexographic printing, offset printing, screen printing, or the like.
- the adhesive semi-cured layer is a semi-coated sheet that is applied to the back surface of the semiconductor wafer, that is, the non-circuit-formed surface to be bonded to the lead frame or the circuit board, and heated or irradiated with ultraviolet rays. Curing to form an adhesive semi-cured layer.
- the material of the adhesive semi-cured layer may be a commonly used adhesive or adhesive component.
- the adhesive include epoxy, polyamide, acrylic, and polyimide.
- adhesives include acrylic, vinyl acetate, ethylene / vinyl acetate copolymer, ethylene / acrylate copolymer, polyamide, polyethylene, polysulfone, epoxy, polyimide, polyamic acid, silicone, phenol, rubber polymer, and fluoro rubber. There are polymers and fluororesins, and polyimide is preferred.
- a mixture, copolymer, and laminate of these pressure-sensitive adhesives and adhesive components can be used for the adhesive semi-cured layer.
- the adhesive semi-cured layer may be mixed with additives such as a curing agent, an ultraviolet polymerization initiator, an antistatic agent, and a curing accelerator.
- Base polymer (meth) acrylic acid ester polymer obtained by suspension polymerization in a copolymer of 54% ethyl acrylate, 22% butyl acrylate and 24% methoxyethyl acrylate (our polymer)
- Ultraviolet-polymerizable compound A terminal acrylate obtained by further reacting dipentaerythritol pentaacrylate with a terminal isocyanate oligomer obtained by reacting a trimer of hexamethylene diisocyanate (aliphatic diisocyanate) to the terminal of poly (propylene oxide) diol Oligomer.
- Silicone graft polymer Silicone graft polymer obtained by polymerizing 30 parts by weight of silicone graft oligomer, 20 parts by weight of butyl acrylate, 30 parts by weight of methyl methacrylate, and 20 parts by weight of 2-hydroxymethyl acrylate (our polymer) Silicone graft oligomer: Silicone graft oligomer having a methacryloyl group at the end of the silicone molecular chain Curing agent: Trimethylolpropan
- the main components of the pressure-sensitive adhesive corresponding to each experiment number and the blending amounts thereof are as shown in Table 1.
- 3 mass of curing agent was added in addition to the components shown in these tables. Partly formulated.
- the base film is made of an ionomer resin mainly composed of an ethylene-methacrylic acid-methacrylic acid alkyl ester copolymer Zn salt, and has a melt flow rate (MFR) of 1.5 g / 10 min (JIS K7210, 210). C.), a melting point of 96 ° C., and a film containing Zn 2+ ions (High Milan 1650 (registered trademark) manufactured by Mitsui DuPont Polychemical Co., Ltd.)
- Adhesive semi-cured layer A 30 ⁇ m thick sheet coated on the back of a semiconductor wafer having a diameter of 8 inches ⁇ thickness of 0.1 mm using an epoxy adhesive as a paste-like adhesive and heated at 110 ° C. for 3 minutes .
- Adhesive semi-cured layer B An adhesive containing an acrylic resin and an epoxy resin as a paste-like adhesive is applied to the entire back surface of a semiconductor wafer having a diameter of 8 inches and a thickness of 0.1 mm, and a high-pressure mercury lamp in a nitrogen atmosphere. A 30 ⁇ m-thick sheet irradiated with 1000 mJ / cm 2 of ultraviolet rays.
- Ultraviolet rays were irradiated at 150 mJ / cm 2 with a high-pressure mercury lamp from the pressure-sensitive adhesive sheet side of the sample in the bonding step.
- ⁇ Dicing process> The amount of cut into the adhesive sheet was 25 ⁇ m. Dicing was performed with a chip size of 10 mm ⁇ 10 mm. As a dicing apparatus, DAD341 manufactured by DISCO was used. The dicing blade used was NBC-ZH205O-27HEEE manufactured by DISCO. Dicing blade shape: outer diameter 55.56 mm, blade width 35 ⁇ m, inner diameter 19.05 mm Dicing blade rotation speed: 40,000 rpm Dicing blade feed rate: 50 mm / sec Cutting water temperature: 25 ° C. Cutting water volume: 1.0L / min
- Chip retention When a semiconductor wafer was diced under the above conditions, the number of chips with an adhesive semi-cured layer held on the adhesive sheet was evaluated. ⁇ (excellent): 95% or more of the chip held on the adhesive sheet ⁇ (good): 90% or more of the chip held on the adhesive sheet is less than 95% ⁇ (impossible): chip held on the adhesive sheet Is less than 90%
- Dicing property After picking up the chip with the adhesive semi-cured layer attached, the 20 dicing lines of the pressure-sensitive adhesive sheet are observed at a magnification of 300 times to determine whether or not the adhesive semi-cured layer remains on the pressure-sensitive adhesive sheet. evaluated. ⁇ (excellent): No residue of adhesive semi-cured layer ⁇ (good): Adhesive semi-cured layer residue above 10% of dicing line x (Not possible): Adhesive semi-cured layer above 50% of dicing line There is a residue
- the adhesive force of the UV curable adhesive is reduced in advance while improving the cohesive force, thereby suppressing pickup failure when picking up a chip with an adhesive semi-cured layer after dicing. it can.
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
- Dicing (AREA)
Abstract
Description
本発明の一態様によれば、前記紫外線硬化型粘着剤が、(メタ)アクリル酸エステル重合体と、ビニル基を4個以上有するウレタンアクリレートオリゴマと、紫外線重合開始剤と、シリコーングラフト重合体とを少なくとも含有する。また、本発明の一態様によれば、前記接着剤半硬化層が、エポキシ樹脂、ポリイミド樹脂、アクリル樹脂、シリコーン樹脂を少なくとも有し、かつ前記接着剤半硬化層の厚みが10μm以上である。
尚、ダイシング工程後であっても、従来方法と同様に、再度の紫外線照射工程を設けても良いのは勿論のことである。
また、本明細書において(メタ)アクリロイル基とはアクリロイル基及びメタアクリロイル基の総称である。(メタ)アクリル酸等の(メタ)を含む化合物等も同様に、名称中に「メタ」を有する化合物と「メタ」を有さない化合物の総称である。紫外線重合性化合物であるウレタンアクリレートオリゴマの官能基数とは、ウレタンアクリレートオリゴマ分子1個あたりのビニル基数をいう。
紫外線の光源は特に限定されず、公知のものが使用できる。紫外線源として、ブラックライト、低圧水銀灯、高圧水銀灯、超高圧水銀灯、メタルハライドランプ、エキシマランプ等が挙げられる。
紫外線硬化型粘着剤は従来公知のものを採用できる。紫外線硬化型粘着剤の成分及び紫外線照射された際の作用は、主剤であるベースポリマで粘着力を発揮させ、紫外線を受けた紫外線重合開始剤で不飽和結合を有する紫外線重合性化合物を三次元網目状構造にさせて硬化させる(粘着力を低下させる)ものである。ピックアップ性を向上させるため、上記ベースポリマとしては、(メタ)アクリル酸エステル重合体、上記紫外線重合性化合物としてはビニル基を4個以上有するウレタンアクリレートオリゴマが好ましく、更に紫外線重合開始剤とシリコーングラフト重合体を含有することが好ましい。
粘着シートは、紫外線照射型粘着剤を基材フィルム上に塗布することによって製造され、基材フィルムと、その基材フィルム上に積層されてなる紫外線照射型粘着剤層とからなる。基材フィルムの厚さは30μm以上とすることが好ましく、60μm以上とすることがさらに好ましい。また、基材フィルム厚さは、300μm以下とすることが好ましく、200μm以下とすることがさらに好ましい。
接着剤半硬化層は、半導体ウエハの裏面、すなわちリードフレーム又は回路基板と接着させるための回路非形成面に、ペースト状接着剤を全面塗布し、これを加熱又は紫外線照射してシート状に半硬化させ、接着剤半硬化層を形成する。
実施例に係る各種実験材料は下記の処方で製造した。
ベースポリマ:エチルアクリレート54%、ブチルアクリレート22%、メトキシエチルアクリレート24%の共重合体において懸濁重合により得られた(メタ)アクリル酸エステル重合体(当社重合品)
紫外線重合性化合物A:ポリ(プロピレンオキサイド)ジオールの末端にヘキサメチレンジイソシアネート(脂肪族ジイソシアネート)の三量体を反応させてなる末端イソシアネートオリゴマに、更にジペンタエリスリトールペンタアクリレートを反応させてなる末端アクリレートオリゴマ。数平均分子量(Mn)が3,700でアクリレート官能基数15個(15官能)のウレタンアクリレートオリゴマ(当社重合品)
紫外線重合性化合物B:ペンタエリスリトールペンタアクリレート(新中村化学社製NKエステルA-TMM-3L)
紫外線重合開始剤:ベンジルジメチルケタール(チバ・ジャパン社製イルガキュア651(登録商標))
シリコーングラフト重合体:シリコーングラフトオリゴマ30質量部、ブチルアクリレート20質量部、メチルメタアクリレート30質量部、及び2-ヒドロキシメチルアクリレート20質量部を重合してなるシリコーングラフト重合体(当社重合品)
シリコーングラフトオリゴマ:シリコーン分子鎖の末端にメタアクリロイル基を有するシリコーングラフトオリゴマ(当社重合品)
硬化剤:1,6-ヘキサメチレンジイソシアネートのトリメチロールプロパンアダクト体(日本ポリウレタン社製コロネートHL(登録商標))
接着剤半硬化層A:ペースト状接着剤としてエポキシ系接着剤を用い、直径8インチ×厚さ0.1mmの半導体ウエハの裏面に全面塗布し、110℃で3分間加熱した厚さ30μmのシート。
接着剤半硬化層B:ペースト状接着剤としてアクリル樹脂、及びエポキシ樹脂を含む接着剤を用い、直径8インチ×厚さ0.1mmの半導体ウエハの裏面に全面塗布し、窒素雰囲気下で高圧水銀灯にて紫外線を1000mJ/cm2照射した厚さ30μmのシート。
テクノビジョン製FM-3343を使用し、半導体ウエハの裏面に形成された接着剤半硬化層に粘着シートを貼り付けた。
上記貼合工程の試料の粘着シート側より高圧水銀灯にて紫外線を150mJ/cm2照射した。
粘着シートへの切り込み量は25μmとした。ダイシングは10mm×10mmのチップサイズで行った。ダイシング装置はDISCO社製DAD341を用いた。ダイシングブレードはDISCO社製NBC-ZH205O-27HEEEを用いた。
ダイシングブレード形状:外径55.56mm、刃幅35μm、内径19.05mm
ダイシングブレード回転数:40,000rpm
ダイシングブレード送り速度:50mm/秒
切削水温度:25℃
切削水量:1.0L/分
ピックアップ装置はキャノンマシナリー社CAP-300IIを用いた。
ニードルピンの数:5
ニードルピンのハイト:0.3mm
エキスパンド量:4mm
チップ保持性:半導体ウエハを前記条件にてダイシングした際に、接着剤半硬化層付きのチップが粘着シートに保持されている数を評価した。
◎(優):粘着シートに保持されているチップが95%以上
○(良):粘着シートに保持されているチップが90%以上95%未満
×(不可):粘着シートに保持されているチップが90%未満
◎(優):95%以上のチップがピックアップできた
○(良):80%以上95%未満のチップがピックアップできた
×(不可):80%未満のチップがピックアップできた
◎(優):接着剤半硬化層の残渣物なし
○(良):ダイシングライン10%以上に接着剤半硬化層の残渣物あり
×(不可):ダイシングライン50%以上に接着剤半硬化層の残渣物あり
Claims (3)
- 半導体ウエハの裏面にペースト状接着剤を塗布し、該ペースト状接着剤を加熱又は紫外線照射によりシート状に半硬化させて接着剤半硬化層を形成する工程と、
基材フィルムに紫外線硬化型粘着剤を積層した粘着シートを、該接着剤半硬化層に貼り付ける貼合工程と、
上記紫外線硬化型粘着剤に紫外線照射を行う紫外線照射工程と、
前記粘着シートに貼り付けられた該接着剤半硬化層と該半導体ウエハとをダイシングするダイシング工程とを有する接着剤半硬化層付き半導体ウエハのダイシング方法。 - 前記紫外線硬化型粘着剤が、(メタ)アクリル酸エステル重合体と、ビニル基を4個以上有するウレタンアクリレートオリゴマと、紫外線重合開始剤と、シリコーングラフト重合体とを少なくとも含有する請求項1記載のダイシング方法。
- 前記接着剤半硬化層が、エポキシ樹脂、ポリイミド樹脂、アクリル樹脂、シリコーン樹脂を少なくとも有し、かつ前記接着剤半硬化層の厚みが10μm以上である請求項1記載のダイシング方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009801467371A CN102217040B (zh) | 2008-11-19 | 2009-11-11 | 电子部件的制造方法 |
US13/130,076 US8399338B2 (en) | 2008-11-19 | 2009-11-11 | Electronic component manufacturing method |
JP2010539210A JPWO2010058727A1 (ja) | 2008-11-19 | 2009-11-11 | 電子部品の製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008-295633 | 2008-11-19 | ||
JP2008295633 | 2008-11-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010058727A1 true WO2010058727A1 (ja) | 2010-05-27 |
Family
ID=42198167
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2009/069207 WO2010058727A1 (ja) | 2008-11-19 | 2009-11-11 | 電子部品の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8399338B2 (ja) |
JP (1) | JPWO2010058727A1 (ja) |
KR (1) | KR20110099106A (ja) |
CN (1) | CN102217040B (ja) |
TW (1) | TWI495703B (ja) |
WO (1) | WO2010058727A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012015231A (ja) * | 2010-06-30 | 2012-01-19 | Disco Abrasive Syst Ltd | テープ貼着方法 |
JP2015518270A (ja) * | 2012-03-20 | 2015-06-25 | スリーエム イノベイティブ プロパティズ カンパニー | 一時的基板支持体及び支持体分離のための積層体、方法、並びに材料 |
KR101784191B1 (ko) | 2010-10-14 | 2017-10-11 | 덴카 주식회사 | 전자부품의 제조방법 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101316446B1 (ko) | 2011-09-29 | 2013-10-08 | 현대자동차주식회사 | 자동차용 캠 타겟 휠 |
KR101708956B1 (ko) * | 2012-03-13 | 2017-02-21 | 시바우라 메카트로닉스 가부시끼가이샤 | 접착제 공급 장치 및 접착제 공급 방법 |
KR101479813B1 (ko) | 2012-04-10 | 2015-01-06 | (주)엘지하우시스 | 반경화 감압 점착필름 |
CN109841557A (zh) * | 2017-11-29 | 2019-06-04 | 东莞新科技术研究开发有限公司 | 半导体的加工方法 |
JP7222919B2 (ja) * | 2017-12-27 | 2023-02-15 | 古河電気工業株式会社 | 放射線硬化型ダイシング用粘着テープ |
TWI765762B (zh) * | 2020-12-25 | 2022-05-21 | 梭特科技股份有限公司 | 角落或側邊接觸的無衝擊力固晶方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02248064A (ja) * | 1989-03-20 | 1990-10-03 | Nitto Denko Corp | 半導体チップ固着キャリヤの製造方法及びウエハ固定部材 |
JPH09266183A (ja) * | 1996-01-22 | 1997-10-07 | Texas Instr Japan Ltd | ウェハダイシング・接着用シートおよび半導体装置の製造方法 |
JP2003142505A (ja) * | 2001-10-31 | 2003-05-16 | Lintec Corp | ウエハダイシング・接着用シートおよび半導体装置の製造方法 |
JP2004238464A (ja) * | 2003-02-05 | 2004-08-26 | Hitachi Chem Co Ltd | 接着シートならびに半導体装置およびその製造方法 |
JP2005005355A (ja) * | 2003-06-10 | 2005-01-06 | Nitto Denko Corp | ダイシング・ダイボンドフィルム |
JP2006060095A (ja) * | 2004-08-20 | 2006-03-02 | Shin Etsu Chem Co Ltd | ダイアタッチ可能な半導体チップの製造方法 |
JP2008001817A (ja) * | 2006-06-23 | 2008-01-10 | Denki Kagaku Kogyo Kk | 粘着剤、粘着剤を用いた粘着シート、粘着シートを用いた多層粘着シート、及び多層粘着シートを用いた電子部品の製造方法。 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MY118036A (en) * | 1996-01-22 | 2004-08-30 | Lintec Corp | Wafer dicing/bonding sheet and process for producing semiconductor device |
JP4776189B2 (ja) | 2004-08-03 | 2011-09-21 | 古河電気工業株式会社 | ウエハ加工用テープ |
JP2006310846A (ja) * | 2005-04-28 | 2006-11-09 | Ls Cable Ltd | 半導体用ダイシングダイ接着フィルム |
JP4891603B2 (ja) * | 2005-12-07 | 2012-03-07 | 電気化学工業株式会社 | 粘着シート及びそれを用いた電子部品製造方法。 |
JP5089895B2 (ja) | 2006-03-15 | 2012-12-05 | 電気化学工業株式会社 | 多層粘着シート、多層粘着シート用の粘着シート、及び多層粘着シートを用いた電子部品の製造方法。 |
US20090230568A1 (en) * | 2007-04-10 | 2009-09-17 | Hiroyuki Yasuda | Adhesive Film for Semiconductor and Semiconductor Device Therewith |
JP5032231B2 (ja) * | 2007-07-23 | 2012-09-26 | リンテック株式会社 | 半導体装置の製造方法 |
US20110018127A1 (en) * | 2008-03-31 | 2011-01-27 | Byoungchul Lee | Multilayer UV-Curable Adhesive Film |
US8592260B2 (en) * | 2009-06-26 | 2013-11-26 | Nitto Denko Corporation | Process for producing a semiconductor device |
JP2011174042A (ja) * | 2010-02-01 | 2011-09-08 | Nitto Denko Corp | 半導体装置製造用フィルム及び半導体装置の製造方法 |
-
2009
- 2009-11-11 WO PCT/JP2009/069207 patent/WO2010058727A1/ja active Application Filing
- 2009-11-11 KR KR1020117013718A patent/KR20110099106A/ko not_active Application Discontinuation
- 2009-11-11 CN CN2009801467371A patent/CN102217040B/zh active Active
- 2009-11-11 JP JP2010539210A patent/JPWO2010058727A1/ja active Pending
- 2009-11-11 US US13/130,076 patent/US8399338B2/en active Active
- 2009-11-18 TW TW098139069A patent/TWI495703B/zh active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02248064A (ja) * | 1989-03-20 | 1990-10-03 | Nitto Denko Corp | 半導体チップ固着キャリヤの製造方法及びウエハ固定部材 |
JPH09266183A (ja) * | 1996-01-22 | 1997-10-07 | Texas Instr Japan Ltd | ウェハダイシング・接着用シートおよび半導体装置の製造方法 |
JP2003142505A (ja) * | 2001-10-31 | 2003-05-16 | Lintec Corp | ウエハダイシング・接着用シートおよび半導体装置の製造方法 |
JP2004238464A (ja) * | 2003-02-05 | 2004-08-26 | Hitachi Chem Co Ltd | 接着シートならびに半導体装置およびその製造方法 |
JP2005005355A (ja) * | 2003-06-10 | 2005-01-06 | Nitto Denko Corp | ダイシング・ダイボンドフィルム |
JP2006060095A (ja) * | 2004-08-20 | 2006-03-02 | Shin Etsu Chem Co Ltd | ダイアタッチ可能な半導体チップの製造方法 |
JP2008001817A (ja) * | 2006-06-23 | 2008-01-10 | Denki Kagaku Kogyo Kk | 粘着剤、粘着剤を用いた粘着シート、粘着シートを用いた多層粘着シート、及び多層粘着シートを用いた電子部品の製造方法。 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012015231A (ja) * | 2010-06-30 | 2012-01-19 | Disco Abrasive Syst Ltd | テープ貼着方法 |
KR101784191B1 (ko) | 2010-10-14 | 2017-10-11 | 덴카 주식회사 | 전자부품의 제조방법 |
JP2015518270A (ja) * | 2012-03-20 | 2015-06-25 | スリーエム イノベイティブ プロパティズ カンパニー | 一時的基板支持体及び支持体分離のための積層体、方法、並びに材料 |
Also Published As
Publication number | Publication date |
---|---|
US20110223743A1 (en) | 2011-09-15 |
KR20110099106A (ko) | 2011-09-06 |
TW201026814A (en) | 2010-07-16 |
US8399338B2 (en) | 2013-03-19 |
TWI495703B (zh) | 2015-08-11 |
CN102217040A (zh) | 2011-10-12 |
CN102217040B (zh) | 2013-10-23 |
JPWO2010058727A1 (ja) | 2012-04-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5178732B2 (ja) | 粘着剤、粘着シート、多層粘着シート及び電子部品の製造方法 | |
WO2010058727A1 (ja) | 電子部品の製造方法 | |
JP5618994B2 (ja) | 粘着剤、粘着シート及び電子部品の製造方法 | |
JP4874011B2 (ja) | 粘着剤、粘着剤を用いた粘着シート、粘着シートを用いた多層粘着シート、及び多層粘着シートを用いた電子部品の製造方法。 | |
KR101559190B1 (ko) | 다이싱 방법 | |
TWI414578B (zh) | 半導體基板加工用黏著片材 | |
WO2010024174A1 (ja) | 粘着テープ又はシート | |
WO2011077835A1 (ja) | 粘着シート及び電子部品の製造方法 | |
JP5161283B2 (ja) | 電子部品の製造方法 | |
JP2010163518A (ja) | 粘着剤、粘着剤を用いた粘着シート、粘着シートを用いたガラス部品の製造方法 | |
JP5210346B2 (ja) | 粘着シート及び電子部品の製造方法 | |
JP4664005B2 (ja) | 接着剤層付き半導体チップの製造方法 | |
JP2011089073A (ja) | 粘着剤、粘着シート、多層粘着シート及び電子部品の製造方法 | |
JP2009158503A (ja) | ウエハ加工用テープ | |
JP4805549B2 (ja) | 粘着シート | |
JP5016703B2 (ja) | 粘着シート及び電子部品の製造方法 | |
CN118813163A (zh) | 背面研磨带 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200980146737.1 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09827508 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2010539210 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13130076 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 20117013718 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 09827508 Country of ref document: EP Kind code of ref document: A1 |