CN102217040B - 电子部件的制造方法 - Google Patents

电子部件的制造方法 Download PDF

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CN102217040B
CN102217040B CN2009801467371A CN200980146737A CN102217040B CN 102217040 B CN102217040 B CN 102217040B CN 2009801467371 A CN2009801467371 A CN 2009801467371A CN 200980146737 A CN200980146737 A CN 200980146737A CN 102217040 B CN102217040 B CN 102217040B
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adhesive
ultraviolet
semi
solid preparation
methyl
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CN102217040A (zh
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齐藤岳史
高津知道
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Denka Co Ltd
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Denki Kagaku Kogyo KK
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Abstract

本发明的目的为通过预先降低紫外线固化型粘合剂的粘合力并同时提高凝集力的方式来抑制在切割后对带有粘合剂半固化层的芯片进行拾取时发生的拾取不良。本发明提供一种带有粘合剂半固化层的半导体晶圆的切割方法，该方法包括：粘合剂半固化层形成工序，在半导体晶圆的背面涂布膏状粘合剂并且对该膏状粘合剂进行加热或利用紫外线照射，使得膏状粘合剂半固化为片状，从而形成粘合剂半固化层；贴合工序，将在基膜上层叠紫外线固化型粘合剂后所得的粘合片贴合于上述粘合剂半固化层上；紫外线照射工序，对上述紫外线固化型粘合剂进行紫外线照射；以及切割工序，对贴合在上述粘合片上的上述粘合剂半固化层和上述半导体晶圆进行切割。

Description

电子部件的制造方法
技术领域
本发明涉及将带有粘合剂半固化层的半导体晶圆切割成芯片状时的电子部件的制造方法。
背景技术
已知电子部件的制造方法之一，包括：贴合工序，将晶圆或电子部件集合体贴合于粘合片上，其中，所述电子部件集合体是通过在绝缘基板上形成多个电路图案所形成的集合体；裁切、分离工序(切割工序)，将所贴合的晶圆或电子部件集合体裁切为单体以实现芯片化；紫外线照射工序，从粘合片侧照射紫外线使粘合剂层的粘合力减小；拾取工序，从粘合片上拾取被裁切而成的各芯片；固定工序，在所拾取的芯片底面涂布粘合剂后，通过该粘合剂将芯片固定于引线框等。
还有这样的方法，即：在裁切工序中，将晶圆或电子部件集合体贴合于粘合片，再将粘合片固定于环形框，然后裁切、分离(切割)成各个芯片。
有人提出了使用兼具切割用粘合片功能和用于将芯片固定于引线框等的粘合剂的功能的粘合片(芯片贴装薄膜一体式片材)的方法，这种粘合片是通过在上述制造方法所使用的粘合片上层叠芯片贴装薄膜所得到的(参考专利文献1、专利文献2)。在电子部件的制造中采用芯片贴装薄膜一体式片材，能够省略切割后的粘合剂涂布工序。较之于通过粘合剂接合芯片和引线框的方法，芯片贴装薄膜一体式片材在对粘合剂部分的厚度控制和粘合剂的溢出抑制方面表现优良。在芯片尺寸封装、堆叠封装、系统级封装等电子部件的制造中应用了芯片贴装薄膜一体式片材。
还有这样一种制造方法，即：预先在半导体晶圆上涂布膏状粘合剂，通过加热或紫外线照射的方式使粘合剂半固化为片状而形成粘合剂半固化层，由此可以省略切割后的粘合剂涂布工序。
然而，随着半导体部件的高度集成化，芯片的尺寸增大而厚度变小，从而切割后芯片的拾取工作困难的情况增多。而且，由于在切割时不仅要切割半导体晶圆，还要切割粘合剂半固化层和粘合片的粘合剂层，因此粘合剂半固化层和粘合剂层混杂在切割线处，即使在切割后通过进行紫外线照射以充分减小粘合力，芯片拾取时的剥离难度仍较大，从而有可能引起拾取不良。
专利文献1：日本国专利申请公开公报“特开2006-049509号公报”
专利文献2：日本国专利申请公开公报“特开2007-246633号公报”
发明的揭示
本发明鉴于上述问题而完成，目的在于提供一种在进行芯片拾取时易于剥离粘合片与粘合剂半固化层而使切割后的芯片拾取操作易于进行的半导体晶圆切割方法。
本发明提供一种带有粘合剂半固化层的半导体晶圆的切割方法，包括：粘合剂半固化层形成工序，在半导体晶圆的背面涂布膏状粘合剂并且对该膏状粘合剂进行加热或紫外线照射，使得膏状粘合剂半固化为片状，从而形成粘合剂半固化层；贴合工序，将在基膜上层叠紫外线固化型粘合剂后所得的粘合片贴合于所述粘合剂半固化层上；紫外线照射工序，对上述紫外线固化型粘合剂进行紫外线照射；切割工序，对贴合在上述粘合片上的所述粘合剂半固化层和所述半导体晶圆进行切割。
根据本发明的一种方式，所述紫外线固化型粘合剂至少含有：(甲基)丙烯酸酯聚合物、含有4个以上乙烯基的氨基甲酸酯丙烯酸酯低聚物、紫外线聚合引发剂和有机硅接枝聚合物。另外，根据本发明的一种方式，所述粘合剂半固化层至少含有：环氧树脂、聚酰亚胺树脂、丙烯酸树脂和有机硅树脂，并且，所述粘合剂半固化层的厚度为10μm以上。
通过上述切割方法，可以预先降低紫外线固化型粘合剂的粘合力并同时提高凝集力，在进行切割后拾取带有粘合剂半固化层的芯片时能够减少粘合剂半固化层与粘合片的紫外线固化型粘合剂层在切割线处发生的混杂。因此，能够抑制芯片拾取不良。
当然，也可以与现有方法同样地在切割工序之后再设一道紫外线照射工序。
实施发明的方式
以下，就本发明的实施方式进行说明。
在本说明书中，单体是指该单体本身或源于单体的结构。只要不进行特别的说明，则本说明书的份和％为质量基准。
另外，在本说明书中，(甲基)丙烯酰基是丙烯酰基和甲基丙烯酰基的总称。(甲基)丙烯酸等含有(甲基)的化合物等同样是名称中含有“甲基”的化合物和名称中不含“甲基”的化合物的总称。作为紫外线聚合性化合物的氨基甲酸酯丙烯酸酯低聚物的官能团数是指平均1个氨基甲酸酯丙烯酸酯低聚物分子的乙烯基数量。
<紫外线照射工序>
紫外线的光源没有特别限定，可以使用公知光源。作为紫外线的光源，可以列举：黑光灯、低压汞灯、高压汞灯、超高压汞灯、金属卤化物灯、准分子灯等。
对紫外线的照射光量没有限定，可以根据紫外线固化型粘合剂的设计进行适当选择，通常优选为大于等于5mJ/cm2且小于1000mJ/cm2。这是因为如果照射光量过少，会使紫外线固化型粘合剂的固化不充分，从而导致可拾取性不良，如果照射光量过多，会因为UV照射时间长而降低操作性。
<紫外线固化型粘合剂层>
紫外线固化型粘合剂可以采用现有公知的物质。紫外线固化型粘合剂的成分及照射紫外线时的作用如下：通过作为主剂的基体聚合物来发挥粘合力，通过受紫外线照射的紫外线聚合引发剂，使含有不饱和键的紫外线聚合性化合物形成三维网状结构从而实现固化(使粘合力减小)。另外，为了提高可拾取性，上述基体聚合物优选(甲基)丙烯酸酯聚合物，上述紫外线聚合性化合物优选具有4个以上乙烯基的氨基甲酸酯丙烯酸酯低聚物，进一步优选含有紫外线聚合引发剂和有机硅接枝聚合物。
作为上述基体聚合物，可以使用一般公知的(甲基)丙烯酸酯聚合物、橡胶粘合剂等。
(甲基)丙烯酸酯聚合物是将(甲基)丙烯酸酯单体聚合后的聚合物。此外，(甲基)丙烯酸酯聚合物可以含有除(甲基)丙烯酸酯单体外的乙烯基化合物单体。
作为(甲基)丙烯酸酯的单体，可以列举，例如，丁基(甲基)丙烯酸酯、2-丁基(甲基)丙烯酸酯、叔丁基(甲基)丙烯酸酯、戊基(甲基)丙烯酸酯、辛基(甲基)丙烯酸酯、2-乙基己基(甲基)丙烯酸酯、壬基(甲基)丙烯酸酯、癸基(甲基)丙烯酸酯、十二烷基(甲基)丙烯酸酯、甲基(甲基)丙烯酸酯、乙基(甲基)丙烯酸酯、异丙基(甲基)丙烯酸酯、十三烷基(甲基)丙烯酸酯、十四烷基(甲基)丙烯酸酯、十六烷基(甲基)丙烯酸酯、十八烷基(甲基)丙烯酸酯、环己基(甲基)丙烯酸酯、异冰片基(甲基)丙烯酸酯、二环戊基(甲基)丙烯酸酯、苄基(甲基)丙烯酸酯、甲氧基乙基(甲基)丙烯酸酯、乙氧基乙基(甲基)丙烯酸酯、丁氧基甲基(甲基)丙烯酸酯、乙氧基正丙基(甲基)丙烯酸酯、2-羟基乙基(甲基)丙烯酸酯、2-羟基丙基(甲基)丙烯酸酯和2-羟基丁基(甲基)丙烯酸酯等。
作为乙烯基化合物单体，可以优选使用具有选自由羟基、羧基、环氧基、酰胺基、氨基、羟甲基、磺酸基、氨基磺酸基及(亚)磷酸酯基组成的官能团组的1种以上的物质。
作为含有羟基的乙烯基化合物单体，可以列举，例如，乙烯醇等。
作为含有羧基的乙烯基化合物单体，可以列举，例如，(甲基)丙烯酸、巴豆酸、马来酸、马来酸酐、衣康酸、富马酸、丙烯酰胺-N-乙醇酸和肉桂酸等。
作为含有环氧基的乙烯基化合物单体，可以列举，例如，烯丙基缩水甘油醚和(甲基)丙烯酸缩水甘油醚等。
作为含有酰胺基的乙烯基化合物单体，可以列举，例如，(甲基)丙烯酰胺等。
作为含有氨基的乙烯基化合物单体，可以列举，例如，N，N-二甲基氨乙基(甲基)丙烯酸酯等。
作为含有羟甲基的乙烯基化合物单体，可以列举，例如，N-羟甲基丙烯酰胺等。
(甲基)丙烯酸酯聚合物的制备方法可以使用乳液聚合、溶液聚合等。在考虑可拾取性的情况下，优选可通过乳液聚合来进行制备的丙烯酸橡胶。
作为上述橡胶粘合剂，可以列举，例如，天然橡胶、合成异戊橡胶、丁苯橡胶、苯乙烯·丁二烯嵌段共聚物、苯乙烯·异戊二烯嵌段共聚物、丁基橡胶、聚异丁烯、聚丁二烯、聚乙烯基醚、硅橡胶、聚乙烯基异丁基醚、氯丁橡胶、丁腈橡胶、接枝胶、再生橡胶、苯乙烯·乙烯·丁烯·嵌段共聚物、苯乙烯·丙烯·丁烯·嵌段共聚物、苯乙烯·异戊二烯·嵌段共聚物、聚异丁烯·乙烯·丙烯共聚物、乙烯醋酸乙烯共聚物、聚异丁烯·硅橡胶、聚乙烯基异丁基醚·氯丁二烯等。上述橡胶粘合剂可以是其中的一种，也可以是混合物。
所述紫外线聚合性化合物是指，分子中至少含有两个以上的光聚合性碳-碳双键的、可通过紫外线照射形成三维网状结构的低分子量化合物，例如，丙烯酸酯化合物和氨基甲酸酯丙烯酸酯低聚物。丙烯酸酯化合物包括：三羟甲基丙烷三丙烯酸酯、四羟甲基甲烷四丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、二季戊四醇单羟基五丙烯酸酯、二季戊四醇六丙烯酸酯、1，4-丁二醇二丙烯酸酯、1，6-己二醇二丙烯酸酯、聚乙二醇二丙烯酸酯、氰尿酸丙烯酸三乙酯、市售的低聚酯丙烯酸酯。
氨基甲酸酯丙烯酸酯低聚物是通过使端异氰酸酯氨基甲酸酯预聚物与具有羟基的(甲基)丙烯酸酯反应而得到的，其中，所述端异氰酸酯氨基甲酸酯预聚物是通过使聚酯类或聚醚类等的多元醇化合物和多元异氰酸酯化合物反应而得到的，所述多元异氰酸酯化合物例如包括2，4-甲苯二异氰酸酯、2，6-甲苯二异氰酸酯、1，3-二甲苯二异氰酸酯、1，4-二甲苯二异氰酸酯、二苯甲烷-4，4-二异氰酸酯、三甲基六亚甲基二异氰酸酯、六亚甲基二异氰酸酯、异佛尔酮二异氰酸酯等，所述具有羟基的(甲基)丙烯酸酯例如包括2-羟基乙基(甲基)丙烯酸酯、2-羟基丙基(甲基)丙烯酸酯、聚乙二醇(甲基)丙烯酸酯、季戊四醇三丙烯酸酯、缩水甘油二(甲基)丙烯酸酯、二季戊四醇单羟基五丙烯酸酯等。作为紫外线和/或放射线聚合性化合物优选含有4个以上乙烯基的氨基甲酸酯丙烯酸酯低聚物。
对紫外线聚合性化合物的混合量没有特别的限定，相对于基体聚合物100质量份，优选为20质量份以上200质量份以下。如果紫外线聚合性化合物的混合量小于20质量份，则经过紫外线照射后的紫外线固化型粘合剂的固化不充分，粘合片与粘合剂半固化层不易剥离，可能会发生可拾取性不良的问题。另外，如果混合量大于200质量份，在紫外线照射后紫外线固化型粘合剂发生过度固化，在切割时可能就会发生芯片飞散，同时因反应残留而产生微小的残胶，导致在带有粘合剂半固化层的晶片被搭载于引线框后进行加热时可能发生接合不良。
作为上述紫外线聚合引发剂，具体而言，可以列举，例如：4-苯氧基二氯苯乙酮、4-叔丁基二氯苯乙酮、二乙氧基苯乙酮、2-羟基-2-甲基-1-苯基丙烷-1-酮、1-(4-异丙基苯基)-2-羟基-2-甲基丙烷-1-酮、1-(4-十二烷基苯基)-2-羟基-2-甲基丙烷-1-酮、4-(2-羟基乙氧基)苯基(2-羟基-2-丙基)酮、1-羟基环己基苯基酮、2-甲基-1-[4-(甲硫基)苯基]-2-吗啉代丙烷-1等的苯乙酮类紫外线聚合引发剂，苯偶姻、苯偶姻甲醚、苯偶姻乙醚、苯偶姻异丙醚、苯偶姻异丁醚、2，2-二甲氧基-2-苯基苯乙酮等的苯偶姻类紫外线聚合引发剂，二苯甲酮、苯甲酰苯甲酸、苯甲酰苯甲酸甲酯、4-苯基二苯甲酮、羟基二苯甲酮、4-苯甲酰基-4’-甲基二苯硫醚、3，3’-二甲基-4-甲氧基二苯甲酮等的二苯甲酮类紫外线聚合引发剂，噻吨酮、2-氯噻吨酮、2-甲基噻吨酮、2，4-二甲基噻吨酮、异丙基噻吨酮、2，4-二氯噻吨酮、2，4-二乙基噻吨酮、2，4-二异丙基噻吨酮等的噻吨酮类紫外线聚合引发剂，α-酰基肟酯、酰基膦氧化物、甲基苯甲酰甲酸酯、苯偶酰、樟脑醌、二苯并环庚酮、2-乙基蒽醌、4’，4”-二乙基间苯二甲酰基苯等的特殊紫外线聚合引发剂等。
上述紫外线聚合引发剂的混合量没有特别限定，相对于紫外线聚合性化合物100质量份，优选为0.1-15质量份。如果混合量过少，可能因紫外线照射的固化作用不够充分而造成粘合力不能降低到所需的程度，如果混合量过多则造成混合过度，可能导致在热量或荧光灯下的稳定性下降。
为了提高芯片的可拾取性，还可以根据需要在紫外线固化型粘合剂中混合有机硅接枝聚合物。通过使用该有机硅接枝聚合物，能够减小粘合剂半固化层和紫外线固化型粘合剂之间的界面的密合度。
有机硅接枝聚合物是将有机硅分子链末端具有乙烯基的单体(以下，称为“有机硅大分子单体”)聚合而得的物质，除此之外没有特别限定，可以列举，例如，有机硅大分子单体的均聚物、有机硅大分子单体与其他乙烯基化合物的共聚物。有机硅大分子单体适于采用有机硅分子链的末端是(甲基)丙烯酰基或苯乙烯基等的乙烯基的化合物。
作为其他乙烯基化合物，优选与粘合剂中混合的其他聚合体的相容性高的(甲基)丙烯酸单体。这是因为，采用相容性高的物质，可以使粘合剂整体均匀。
有机硅接枝聚合物的混合量没有特别限定，相对于100质量份基体聚合物，优选为0.1质量份以上10质量份以下。如果有机硅接枝聚合物的混合量小于0.1质量份，则粘合片与粘合剂半固化层不易剥离，可能会导致晶片可拾取性差的问题。此外，如果有机硅接枝聚合物的混合量超过10质量份，则可能会造成初始粘合力降低从而导致切割时从环形框剥离的情况。
为了任意设定初始粘合力，还可以根据需要在紫外线固化型粘合剂中混合固化剂。通过采用该固化剂，可提高粘合剂的凝集力，这样，即使在紫外线照射前(未照射)的状态下，进行贴合时也不会产生污染，从而得到再剥离性。
作为上述固化剂，有异氰酸酯类、环氧类、氮丙啶类等的物质等，且可以是上述中的一种，也可以是混合物。作为上述异氰酸酯，可以列举多元异氰酸酯化合物，包括，例如：2，4-甲苯二异氰酸酯、2，6-甲苯二异氰酸酯、1，3-亚二甲苯二异氰酸酯、1，4-二甲苯二异氰酸酯、二苯甲烷-4，4’-二异氰酸酯、二苯甲烷-2，4’-二异氰酸酯、3-甲基二苯甲烷二异氰酸酯、六亚甲基二异氰酸酯、异佛尔酮二异氰酸酯、二环己基甲烷-4，4’-二异氰酸酯、二环己基甲烷-2，4’-二异氰酸酯、赖氨酸异氰酸酯、亚苯基二异氰酸酯、甲苯二异氰酸酯、二苯基甲烷二异氰酸酯、环己烷二异氰酸酯等。
紫外线照射型粘合剂的形成厚度通常为5-70μm。这是因为，如果紫外线照射型粘合剂的厚度过厚，则紫外线照射引起的固化速度较慢，如果厚度过薄，则无法设定高粘合力。在上述粘合剂中，可以适当选择添加现有公知的增粘树脂、填充剂、抗老化剂、柔软剂、稳定剂或着色剂等。
<粘合片>
粘合片是通过将紫外线照射型粘合剂涂布于基膜上来制造的，包括基膜和层叠于该基膜上的紫外线照射型粘合剂层。基膜的厚度优选为30μm以上，进一步优选为60μm以上。此外，基膜的厚度优选为300μm以下，进一步优选为200μm以下。
基膜的原材料例如有聚氯乙烯、聚对苯二甲酸乙二酯、乙烯-醋酸乙烯酯共聚物、乙烯-丙烯酸-丙烯酸酯薄膜、乙烯-丙烯酸乙酯共聚物、热塑性烯烃类弹性体、聚乙烯、聚丙烯、聚丙烯类共聚物、乙烯-丙烯酸共聚物以及通过金属离子使乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸-(甲基)丙烯酸酯共聚物等交联而成的离聚物树脂。基膜中可以使用上述树脂的混合物、共聚物及多层薄膜等。
在上述原材料中，基膜的原材料优选使用离聚物树脂。离聚物树脂中，如果使用如下离聚物树脂，则具有抑制晶须状切削屑的产生的效果，因此优选之。该离聚物树脂是通过Na+、K+、Zn2+等金属离子使含有乙烯单元、(甲基)丙烯酸单元及(甲基)丙烯酸烷基酯单元的共聚物交联而成的树脂。
基膜的成型方法包括，例如，可以列举压延成型法、T模挤出法、吹塑法及流延法等。
在基膜上形成紫外线照射型粘合剂层以制备粘合片的方法包括，例如，通过凹版涂布机、逗号式涂布机、棒式涂布机、刮刀涂布机或辊式涂布机等涂布机在基膜上直接涂布粘合剂的方法。也可以通过凸版印刷、凹版印刷、平版印刷、柔性版印刷、胶版印刷或丝网印刷等在基膜上印刷粘合剂。
<粘合剂半固化层>
粘合剂半固化层以下述方式形成，即：在半导体晶圆的背面，即，用于与引线框或电路基板粘合的非电路形成面的整面上涂布膏状粘合剂，再对粘合剂进行加热或紫外线照射以使其半固化为片状，形成粘合剂半固化层。
粘合剂半固化层的材质可以是通常所使用的粘合剂或粘接剂的成分即可。粘合剂包括，例如，环氧树脂、聚酰胺、丙烯酸树脂、聚酰亚胺等。粘接剂包括，例如，丙烯酸树脂、醋酸乙烯酯、乙烯·醋酸乙烯酯共聚物、乙烯·丙烯酸酯共聚物、聚酰胺、聚乙烯、聚砜、环氧树脂、聚酰亚胺、聚酰胺酸、有机硅树脂、苯酚、橡胶聚合物、氟橡胶聚合物及氟树脂等。优选采用聚酰亚胺。
可以在粘合剂半固化层中使用上述粘合剂或粘接剂的成分的混合物、共聚物及层叠体。还可以根据需要在粘合剂半固化层中混合例如固化剂、紫外线聚合引发剂、防静电剂、固化促进剂等的添加剂。
实施例
<实验材料的制备>
实施例中相关的各种实验材料按照下述配方制备。
粘合片的材料包括下述，即，
·基体聚合物：通过悬浮聚合而得到的(甲基)丙烯酸酯聚合物(本公司的聚合产品)，为54％的丙烯酸乙酯、22％的丙烯酸丁酯和24％的丙烯酸甲氧基乙酯的共聚物。
·紫外线聚合性化合物A：使六亚甲基二异氰酸酯(脂肪族二异氰酸酯)的三聚体与聚环氧丙烷二醇的末端反应得到端异氰酸酯低聚物，然后进一步与二季戊四醇五丙烯酸酯反应而得的端丙烯酸酯低聚物。是数均分子量(Mn)为3700、丙烯酸酯官能团数为15(15官能)的氨基甲酸酯丙烯酸酯低聚物(本公司的聚合产品)。
·紫外线聚合性化合物B：季戊四醇五丙烯酸酯(新中村化学公司制，NK酯A-TMM-3L)。
·紫外线聚合引发剂：苯偶酰二甲基缩酮(汽巴(日本)公司制，产品名为IRGACURE 651(注册商标))。
·有机硅接枝聚合物：使30质量份的有机硅接枝低聚物、20质量份的丙烯酸丁酯、30质量份的甲基丙烯酸甲酯和20质量份的2-羟甲基丙烯酸酯聚合而得的有机硅接枝聚合物(本公司的聚合产品)。
·有机硅接枝低聚物：有机硅分子链的末端具有甲基丙烯酰基的有机硅接枝低聚物(本公司的聚合产品)。
·固化剂：1，6-六亚甲基二异氰酸酯的三羟甲基丙烷加成物(日本聚氨酯公司制，产品名为Colonate HL(注册商标))。
各实验编号所对应的粘合剂的主要成分及其混合量如表1所示。另外，在各粘合剂的制备时，在这些表所示出的成分的基础上，还混合了3质量份的固化剂。
表[1]
接着，将粘合剂涂布于PET隔离膜上使得干燥后的粘合剂层的厚度为10μm，然后将其层叠在基膜上，从而得到粘合片。作为基膜，其由以乙烯-甲基丙烯酸-甲基丙烯酸烷基酯共聚物的Zn盐为主体的离聚物树脂构成，基膜采用了熔体流动速度(MFR)为1.5g/10分钟(JIS K7210，210℃)、熔点为96℃、含有Zn2+离子的薄膜(三井·杜邦聚化工公司制，产品名为Himilan1650(注册商标))。
粘合剂半固化层包括下述，即，
粘合剂半固化层A：使用环氧树脂类粘合剂作为膏状粘合剂，将其涂布于直径为8英寸、厚度为0.1mm的半导体晶圆的整个背面，再以110℃加热3分钟后得到的厚度30μm的片材。
粘合剂半固化层B：使用含有丙烯酸树脂和环氧树脂的粘合剂作为膏状粘合剂，将其涂布于直径为8英寸、厚度为0.1mm的半导体晶圆的整个背面，在氮气氛中用高压汞灯以1000mJ/cm2进行紫外线照射后得到的厚度30μm的片材。
<贴合工序>
使用技术视野(TECHNO VISION)公司研制的FM-3343，将粘合片贴合于在半导体晶圆的背面所形成的粘合剂半固化层上。
<紫外线照射工序>
利用高压汞灯从上述贴合工序的试样粘合片一侧以150mJ/cm2进行紫外线照射。
<切割工序>
向粘合片的切入量为25μm。按照10mm×10mm的芯片尺寸进行切割。切割装置采用迪斯科(DISCO)公司制的DAD341。划片刀采用迪斯科公司制的NBC-ZH205O-27HEEE。
划片刀形状：外径55.56mm，刃宽35μm，内径19.05mm。
划片刀转速：40000rpm
划片刀推进速度：50mm/秒
切削水温度：25℃。
切削水量：1.0L/分钟。
<拾取工序>
拾取装置采用佳能机械(canon-machinery)公司制CAP-300II。
针销数：5
针销的高度：0.3mm
拉伸量：4mm
<实验结果的评估>
芯片保持性：在上述条件下切割半导体晶圆后，对粘合片所保持的带有粘合剂半固化层的芯片数进行评价。
◎(优)：粘合片所保持的芯片为95％以上。
○(良)：粘合片所保持的芯片为90％以上小于95％。
×(差)：粘合片所保持的芯片小于90％。
可拾取性：在上述条件下切割半导体晶圆后，对能够在附着有粘合剂半固化层的状态下拾取的芯片数进行评价。
◎(优)：能够拾取95％以上芯片。
○(良)：能够拾取80％以上小于95％的芯片。
×(差)：能够拾取小于80％的芯片。
切割性：在附着有粘合剂半固化层的状态下拾取芯片后，用300倍的显微镜观察粘合片的20条切割线，对粘合片上的粘合剂半固化层的残渣情况进行评价。
◎(优)：没有粘合剂半固化层的残渣。
○(良)：10％以上的切割线有粘合剂半固化层的残渣。
×(差)：50％以上的切割线有粘合剂半固化层的残渣。
由表1的结果可知，比较例6的试验中没有进行紫外线照射，因此可拾取性和切割性差。相反地，具有本发明的结构的实施例在切割时的各项特性评价都获得了良好的结果。
根据本发明的切割方法，通过预先减小紫外线固化型粘合剂的粘合力并同时提高凝集力，能够抑制在进行切割后拾取带有粘合剂半固化层的芯片时所发生的芯片拾取不良。

Claims (2)

1.带有粘合剂半固化层的半导体晶圆的切割方法，包括：
粘合剂半固化层形成工序，在半导体晶圆的背面涂布膏状粘合剂并且对该膏状粘合剂进行加热或紫外线照射，使得膏状粘合剂半固化为片状，从而形成粘合剂半固化层；
贴合工序，将在基膜上层叠紫外线固化型粘合剂后所得的粘合片贴合于所述粘合剂半固化层上；
紫外线照射工序，对所述紫外线固化型粘合剂进行紫外线照射；以及
切割工序，对贴合在所述粘合片上的所述粘合剂半固化层和所述半导体晶圆进行切割,
所述紫外线固化型粘合剂至少含有：(甲基)丙烯酸酯聚合物、含有4个以上乙烯基的氨基甲酸酯丙烯酸酯低聚物、紫外线聚合引发剂和有机硅接枝聚合物。
2.如权利要求1所述的切割方法，其中，
所述粘合剂半固化层至少含有环氧树脂、聚酰亚胺树脂、丙烯酸树脂和有机硅树脂，并且，所述粘合剂半固化层的厚度为10μm以上。
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