WO2010056051A8 - 투명도전막 식각용액 - Google Patents
투명도전막 식각용액 Download PDFInfo
- Publication number
- WO2010056051A8 WO2010056051A8 PCT/KR2009/006657 KR2009006657W WO2010056051A8 WO 2010056051 A8 WO2010056051 A8 WO 2010056051A8 KR 2009006657 W KR2009006657 W KR 2009006657W WO 2010056051 A8 WO2010056051 A8 WO 2010056051A8
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- present
- transparent conductive
- etching solution
- conductive film
- Prior art date
Links
- 238000005530 etching Methods 0.000 title abstract 3
- 239000010408 film Substances 0.000 abstract 5
- 239000000203 mixture Substances 0.000 abstract 4
- 239000003112 inhibitor Substances 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910000881 Cu alloy Inorganic materials 0.000 abstract 1
- 229910001182 Mo alloy Inorganic materials 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 150000002366 halogen compounds Chemical class 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- 239000004973 liquid crystal related substance Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200980139930.2A CN102177219B (zh) | 2008-11-12 | 2009-11-12 | 透明导电膜蚀刻溶液 |
JP2011535523A JP2012508965A (ja) | 2008-11-12 | 2009-11-12 | 透明伝導膜エッチング溶液 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2008-0112176 | 2008-11-12 | ||
KR1020080112176A KR101531688B1 (ko) | 2008-11-12 | 2008-11-12 | 투명도전막 식각용액 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2010056051A2 WO2010056051A2 (ko) | 2010-05-20 |
WO2010056051A3 WO2010056051A3 (ko) | 2010-08-19 |
WO2010056051A8 true WO2010056051A8 (ko) | 2011-04-21 |
Family
ID=42170524
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2009/006657 WO2010056051A2 (ko) | 2008-11-12 | 2009-11-12 | 투명도전막 식각용액 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2012508965A (ko) |
KR (1) | KR101531688B1 (ko) |
CN (1) | CN102177219B (ko) |
TW (1) | TWI419957B (ko) |
WO (1) | WO2010056051A2 (ko) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101774484B1 (ko) * | 2011-02-15 | 2017-09-05 | 삼성디스플레이 주식회사 | 인듐 산화막의 비할로겐성 식각액 및 이를 이용한 표시 기판의 제조 방법 |
KR101293628B1 (ko) * | 2011-06-10 | 2013-08-13 | 솔브레인 주식회사 | 결정질 산화 인듐 주석막 식각용액 |
KR102009250B1 (ko) * | 2011-09-09 | 2019-08-12 | 동우 화인켐 주식회사 | 표시장치의 제조방법 및 이에 이용되는 구리계 금속막/금속 산화물막의 식각액 조성물 |
KR101349975B1 (ko) * | 2011-11-17 | 2014-01-15 | 주식회사 이엔에프테크놀로지 | 몰리브덴 합금막 및 인듐 산화막 식각액 조성물 |
JP6135999B2 (ja) * | 2012-04-10 | 2017-05-31 | 三菱瓦斯化学株式会社 | 銅およびモリブデンを含む多層膜のエッチングに使用される液体組成物、およびそれを用いたエッチング方法 |
KR101394133B1 (ko) * | 2012-08-22 | 2014-05-15 | 주식회사 이엔에프테크놀로지 | 몰리브덴 합금막 및 인듐 산화막 식각액 조성물 |
JP6044337B2 (ja) * | 2012-12-28 | 2016-12-14 | 三菱瓦斯化学株式会社 | インジウムとガリウムおよび酸素、またはインジウムとガリウムと亜鉛および酸素からなる酸化物のエッチング液およびエッチング方法 |
KR20150043569A (ko) * | 2013-10-07 | 2015-04-23 | 주식회사 이엔에프테크놀로지 | 구리 및 몰리브덴 함유 막의 식각액 조성물 |
CN103980905B (zh) * | 2014-05-07 | 2017-04-05 | 佛山市中山大学研究院 | 一种用于氧化物材料体系的蚀刻液及其蚀刻方法和应用 |
KR102323942B1 (ko) | 2015-01-22 | 2021-11-09 | 동우 화인켐 주식회사 | 인듐산화막 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법 |
JP6494349B2 (ja) * | 2015-03-18 | 2019-04-03 | 株式会社Adeka | エッチング液組成物及びエッチング方法 |
JP6514578B2 (ja) * | 2015-06-17 | 2019-05-15 | 東京応化工業株式会社 | エッチング組成物及び伝導膜の製造方法 |
KR102471019B1 (ko) * | 2015-09-02 | 2022-11-25 | 삼성디스플레이 주식회사 | 식각액 조성물 및 이를 이용한 박막 트랜지스터 표시판의 제조 방법 |
KR102384563B1 (ko) | 2016-03-24 | 2022-04-08 | 동우 화인켐 주식회사 | 인듐 산화막용 식각 조성물 |
KR102384564B1 (ko) | 2016-03-25 | 2022-04-08 | 동우 화인켐 주식회사 | 인듐 산화막 및 몰리브덴막용 식각 조성물 |
KR102362556B1 (ko) | 2016-03-25 | 2022-02-14 | 동우 화인켐 주식회사 | 인듐 산화막용 식각 조성물 |
CN107236956B (zh) * | 2016-03-28 | 2020-04-17 | 东友精细化工有限公司 | 用于铜基金属层的蚀刻剂组合物及用其制造显示设备的阵列基板的方法 |
KR102459686B1 (ko) | 2016-06-24 | 2022-10-27 | 동우 화인켐 주식회사 | 식각액 조성물 및 이를 이용한 표시 장치용 어레이 기판의 제조방법 |
WO2018154775A1 (ja) * | 2017-02-27 | 2018-08-30 | 富士技研工業株式会社 | エッチング液とその使用 |
KR102007428B1 (ko) | 2017-03-09 | 2019-08-05 | 코닝 인코포레이티드 | 글라스 지지체에 의하여 지지되는 금속 박막의 제조방법 |
KR102674217B1 (ko) * | 2018-11-23 | 2024-06-11 | 주식회사 이엔에프테크놀로지 | 식각액 조성물 |
CN112064027B (zh) * | 2020-09-14 | 2022-04-05 | 深圳市志凌伟业光电有限公司 | 复合铜膜结构用蚀刻液 |
CN113322072B (zh) * | 2021-06-25 | 2022-06-03 | 江阴润玛电子材料股份有限公司 | 一种兼容性ito蚀刻液及制备方法 |
CN114740070B (zh) * | 2022-05-18 | 2023-11-03 | 福州大学 | 一种检测酸性镀铜液中的铜离子浓度的方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5244539A (en) * | 1992-01-27 | 1993-09-14 | Ardrox, Inc. | Composition and method for stripping films from printed circuit boards |
JPH07286172A (ja) * | 1994-04-20 | 1995-10-31 | Asahi Glass Co Ltd | エッチング液およびエッチング方法 |
KR100248113B1 (ko) * | 1997-01-21 | 2000-03-15 | 이기원 | 전자 표시 장치 및 기판용 세정 및 식각 조성물 |
JP3974305B2 (ja) * | 1999-06-18 | 2007-09-12 | エルジー フィリップス エルシーディー カンパニー リミテッド | エッチング剤及びこれを用いた電子機器用基板の製造方法と電子機器 |
DE10331033B4 (de) * | 2002-07-12 | 2010-04-29 | Ekc Technology K.K. R&D Business Park Bldg. D-3F, Kawasaki | Herstellungsverfahren einer Halbleitervorrichtung und Reinigungszusammensetzung dafür |
KR100505328B1 (ko) * | 2002-12-12 | 2005-07-29 | 엘지.필립스 엘시디 주식회사 | 구리 몰리브덴막에서 몰리브덴 잔사를 제거할 수 있는식각용액 및 그 식각 방법 |
KR20050066395A (ko) * | 2003-12-26 | 2005-06-30 | 동우 화인켐 주식회사 | 인듐 산화막의 식각액 조성물 및 그를 이용한 식각 방법 |
KR100595913B1 (ko) * | 2004-07-07 | 2006-07-03 | 테크노세미켐 주식회사 | 평판디스플레이용 투명도전막의 에칭액 조성물 |
KR101337263B1 (ko) * | 2004-08-25 | 2013-12-05 | 동우 화인켐 주식회사 | 인듐 산화막의 식각액 조성물 및 이를 이용한 식각 방법 |
KR101026983B1 (ko) * | 2004-10-28 | 2011-04-11 | 주식회사 동진쎄미켐 | 박막트랜지스터 액정표시장치의 에칭 조성물 |
JP4528164B2 (ja) * | 2005-03-11 | 2010-08-18 | 関東化学株式会社 | エッチング液組成物 |
KR100601740B1 (ko) * | 2005-04-11 | 2006-07-18 | 테크노세미켐 주식회사 | 투명도전막 식각용액 |
KR101299131B1 (ko) * | 2006-05-10 | 2013-08-22 | 주식회사 동진쎄미켐 | 박막트랜지스터 액정표시장치의 식각 조성물 |
US20080224092A1 (en) * | 2007-03-15 | 2008-09-18 | Samsung Electronics Co., Ltd. | Etchant for metal |
KR101310310B1 (ko) * | 2007-03-15 | 2013-09-23 | 주식회사 동진쎄미켐 | 박막트랜지스터 액정표시장치의 식각액 조성물 |
KR101507592B1 (ko) * | 2008-09-12 | 2015-04-06 | 주식회사 동진쎄미켐 | 유기발광다이오드표시장치의 식각액 조성물 |
-
2008
- 2008-11-12 KR KR1020080112176A patent/KR101531688B1/ko active IP Right Grant
-
2009
- 2009-11-12 WO PCT/KR2009/006657 patent/WO2010056051A2/ko active Application Filing
- 2009-11-12 JP JP2011535523A patent/JP2012508965A/ja active Pending
- 2009-11-12 TW TW098138387A patent/TWI419957B/zh active
- 2009-11-12 CN CN200980139930.2A patent/CN102177219B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN102177219B (zh) | 2014-06-11 |
WO2010056051A2 (ko) | 2010-05-20 |
TW201035290A (en) | 2010-10-01 |
CN102177219A (zh) | 2011-09-07 |
KR101531688B1 (ko) | 2015-06-26 |
TWI419957B (zh) | 2013-12-21 |
KR20100053175A (ko) | 2010-05-20 |
JP2012508965A (ja) | 2012-04-12 |
WO2010056051A3 (ko) | 2010-08-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2010056051A8 (ko) | 투명도전막 식각용액 | |
MY152247A (en) | Etching agent, etching method and liquid for preparing etching agent | |
TW200745313A (en) | Substrate etching liquid | |
TWI524428B (zh) | 液晶顯示器用之陣列基板及其製造方法以及蝕刻銅系金屬層之方法及其蝕刻劑組成物 | |
TW200739700A (en) | Etchant and method for fabricating liquid crystal display using the same | |
TW200702427A (en) | Etchant, method for fabricating interconnection line using the etchant, and method for fabricating thin film transistor substrate using the etchant | |
CN103890234A (zh) | 钼合金膜及铟氧化膜的蚀刻液组合物 | |
JP5845501B2 (ja) | 透明導電性薄膜積層体のエッチング液 | |
WO2009025383A1 (ja) | 研磨組成物 | |
TW201638393A (zh) | 蝕刻劑組合物和製作用於液晶顯示器的陣列基板的方法 | |
KR101933529B1 (ko) | 구리계 금속막의 식각액 조성물 및 이를 이용한 액정표시장치용 어레이 기판의 제조방법 | |
WO2011136594A3 (ko) | 구리와 티타늄을 포함하는 금속막용 식각액 조성물 | |
MY180636A (en) | Method for producing metal oxide compositions and coated substrates | |
TWI632670B (zh) | 用於銅基金屬膜的蝕刻劑組合物及製造液晶顯示器用陣列基板的方法 | |
KR20160001384A (ko) | 금속막의 식각액 조성물 및 이를 이용한 액정표시장치용 어레이 기판의 제조방법 | |
KR102368373B1 (ko) | 식각액 조성물 및 액정표시장치용 어레이 기판의 제조방법 | |
TW200740968A (en) | Polishing composition for silicon wafer | |
TW200634134A (en) | Etching liquid composition | |
TW200641168A (en) | Etchant compositions for metal laminated films having titanium and aluminum layer | |
TWI662155B (zh) | 蝕刻液組合物及使用其製造液晶顯示器用陣列基板的方法 | |
TW201600644A (zh) | 蝕刻液組合物及使用其製造液晶顯示器用陣列基板的方法 | |
WO2011028037A3 (en) | Etchant for thin film transistor-liquid crystal display | |
KR20150050948A (ko) | 구리/몰리브데늄 합금막의 식각액 조성물 | |
TWI555884B (zh) | 配線形成方法及銅基金屬膜用蝕刻液組合物 | |
CN102753652B (zh) | 蚀刻液组成物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200980139930.2 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09826283 Country of ref document: EP Kind code of ref document: A2 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2011535523 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 09826283 Country of ref document: EP Kind code of ref document: A2 |