WO2010052846A1 - 巻取式真空処理装置 - Google Patents
巻取式真空処理装置 Download PDFInfo
- Publication number
- WO2010052846A1 WO2010052846A1 PCT/JP2009/005652 JP2009005652W WO2010052846A1 WO 2010052846 A1 WO2010052846 A1 WO 2010052846A1 JP 2009005652 W JP2009005652 W JP 2009005652W WO 2010052846 A1 WO2010052846 A1 WO 2010052846A1
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- WIPO (PCT)
- Prior art keywords
- electrode
- roller
- processing apparatus
- vacuum processing
- chamber
- Prior art date
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/3277—Continuous moving of continuous material
Definitions
- the present invention continuously unwinds a flexible processing object under reduced pressure, closely contacts the unwound processing object to a can roller, and performs a predetermined process on the processing object on the can roller.
- the present invention relates to a take-up vacuum processing apparatus that winds up a processing object.
- a thin film forming apparatus that forms a thin film on a substrate while continuously unwinding and winding the magnetic recording medium with a roller.
- Such a thin film forming apparatus generates plasma by a reactive gas between the can and the first anode disposed opposite to the can while the magnetic recording medium is brought into close contact with the rotating can. .
- a protective film is formed on the magnetic recording medium (see, for example, Patent Document 1).
- a plasma processing apparatus that performs plasma processing (for example, RIE (Reactive Ion Etching)) while continuously unwinding and winding a plastic film such as PET or PI (polyimide).
- plasma processing for example, RIE (Reactive Ion Etching)
- RIE reactive Ion Etching
- a plastic film such as PET or PI (polyimide).
- Such a plasma processing apparatus generates plasma by a process gas between a can and an anode arranged so as to face the can while the plastic film is allowed to travel on a rotating can. Thereby, a film is etched and the surface modification of a film can be performed.
- a high frequency power source is connected to the can, and high frequency power is supplied from the high frequency power source when the can rotates at a predetermined speed.
- the rotating can and the stationary high-frequency power source are connected by a rotation introducing unit (not shown) such as a rotary connector using mercury, a capacitor coupling or a slip ring made of a plurality of opposed flat plates, for example.
- the rotary connector has a structure including a rotating electrode connected to the can side at both ends of a box filled with mercury, and a fixed electrode connected to the high frequency power source side.
- a high frequency such as 13.56 MHz
- heat is generated and there is a risk of damage to the rotary connector.
- one rotating flat plate is connected to the can side, and the other fixed plurality of flat plates respectively facing the flat plates are connected to the high frequency power source side.
- dielectric breakdown may occur at a high voltage.
- the slip ring When the slip ring is used as a connection part of a high frequency power source, there is a risk of damage due to heat generation.
- the electrode since the electrode is a contact type in the slip ring, the electrode is worn by the contact, and is not suitable for extending the life.
- a winding type vacuum processing apparatus includes a chamber, a first electrode, a gas supply unit, and a third electrode.
- the chamber can maintain a vacuum state.
- the first electrode is of a roller type and is rotatably provided in the chamber.
- the flexible processing object contacts and rotates to allow the processing object to run.
- the gas supply unit includes a second electrode arranged to face the first electrode in the chamber, and the processing object in contact with the first electrode, the second electrode, It is possible to supply process gas during this period.
- the third electrode is disposed in the chamber so as to face the first electrode, and is applied with an AC voltage from the AC power source.
- FIG. 1 It is a schematic block diagram which shows a plasma processing apparatus as a winding type vacuum processing apparatus which concerns on one Embodiment of this invention. It is a schematic side view of the plasma processing apparatus. It is sectional drawing which shows the electrode unit which concerns on other embodiment.
- a winding type vacuum processing apparatus includes a chamber, a first electrode, a gas supply unit, and a third electrode.
- the chamber can maintain a vacuum state.
- the first electrode is of a roller type and is rotatably provided in the chamber.
- the flexible processing object contacts and rotates to allow the processing object to run.
- the gas supply unit includes a second electrode arranged to face the first electrode in the chamber, and the processing object in contact with the first electrode, the second electrode, It is possible to supply process gas during this period.
- the third electrode is disposed in the chamber so as to face the first electrode, and is applied with an AC voltage from the AC power source.
- the third electrode is disposed in the chamber, when the interior of the chamber is maintained at a predetermined degree of vacuum, the occurrence of dielectric breakdown between the first electrode and the third electrode is prevented. Can do.
- the third electrode is arranged with a predetermined gap from the first electrode, that is, since an AC voltage is applied to the first electrode in a non-contact manner, there is no wear due to contact and the electrode has a long life. Can be achieved.
- the first electrode may be provided so as to extend in the rotation axis direction of the first electrode.
- the length of the third electrode in the direction of the rotation axis of the first electrode is closer to the length of the first electrode in that direction, charges are uniformly generated in the first electrode and the third electrode.
- the longer the length of the can roller in the rotating shaft direction the longer the rotating shaft of the can roller. Resistance to supply of electric charges to the other end in the direction increases.
- the take-up type vacuum processing apparatus of this embodiment such a problem of electrical resistance can be solved, and as a result, plasma by the reaction gas can be generated uniformly between the first electrode and the second electrode. Can do.
- the first electrode may have an outer peripheral surface
- the third electrode may have a surface facing the outer peripheral surface along the outer peripheral surface of the first electrode while keeping a gap constant. Good.
- the distance between the first electrode and the third electrode can be made substantially constant.
- plasma by the reactive gas can be generated uniformly between the first electrode and the second electrode.
- the winding-type vacuum processing apparatus may further include a temperature adjustment mechanism that cools or heats the first electrode. Thereby, it can be made to run, cooling or heating the processing object which contacts the 1st electrode.
- the take-up vacuum processing apparatus may further include a cooling mechanism for cooling the third electrode.
- the third electrode is fixed, it is easier to install the water cooling mechanism on the third electrode as compared with the conventional case where the rotation introducing unit is provided with a cooling mechanism.
- FIG. 1 is a schematic configuration diagram showing a plasma processing apparatus as a winding type vacuum processing apparatus according to an embodiment of the present invention.
- FIG. 2 is a schematic side view of the plasma processing apparatus 100.
- This plasma processing apparatus 100 uses, for example, a tape-shaped film 5 as a processing target.
- a resin film is used, and typical examples thereof include those having a heat resistant temperature of 200 ° C. or higher, such as polyimide, polyamide, and aramid.
- the film 5 is not limited to a resin film, and may be, for example, a magnetic film used for a magnetic recording medium or other films.
- the plasma processing apparatus 100 includes a vacuum chamber 15, a traveling mechanism 10, a gas supply unit 20, an electrode unit 9, and an RF power source 3.
- the vacuum chamber 15 has a partition wall 16 provided with a connection portion 17 to which an exhaust pipe (not shown) is connected.
- a vacuum pump (not shown) is connected to the connection portion 17 via the exhaust pipe, and a predetermined vacuum state is maintained in the vacuum chamber 15 by the operation of the vacuum pump.
- the degree of vacuum can be set as appropriate within a known range suitable for plasma processing.
- the inside of the vacuum chamber 15 is divided into a chamber in which the electrode unit 9 is disposed by a partition plate 28 and a chamber in which a plasma generation unit including a counter electrode 23 described later is disposed.
- the partition plate 28 has an arc portion 28 a provided so as to face the side surface of the can roller 13. By providing these arc portions 28a, the conductance of gas between the two chambers can be reduced. By reducing the conductance between the rooms, it becomes easy to individually adjust the pressure in each room.
- the chamber in which the plasma generation unit including the counter electrode 23 is disposed is adjusted to a pressure suitable for plasma processing, and the chamber in which the electrode unit 9 is disposed has abnormal discharge or the like between the electrode unit 9 and the can roller 13. The pressure is adjusted so that it does not occur. It is preferable that an exhaust means is also connected to the chamber in which the electrode unit 9 is arranged so that exhaust can be performed individually.
- the traveling mechanism 10 is disposed in the vacuum chamber 15 and causes the film 5 to travel so that the film 5 can be surface-treated.
- the traveling mechanism 10 includes an unwinding roller 11 that feeds out the film 5, a fed-out film 5 that comes into contact with and in close contact with, and a can roller 13 that cools the adhered film 5, and is fed out from the can roller 13.
- a take-up roller 12 for taking up the film 5 is provided.
- Guide rollers 14 are provided between the unwinding roller 11 and the can roller 13 and between the winding roller 12 and the can roller 13, respectively.
- the film 5 comes into contact with the outer peripheral surface 18a of the can roller 13 at a predetermined holding angle.
- the can roller 13 has a cylindrical shape, and the rotary shaft member 2 is rotatably supported by, for example, a support member 8a and a base plate 8b.
- the can roller 13 includes a disk-shaped insulator 19 provided at both ends, and a roller electrode 18 that is a conductive member sandwiched between the insulators 19.
- a cooling mechanism (not shown) is provided in the can roller 13 so that the roller electrode 18 of the can roller 13 is mainly cooled.
- the cooling mechanism for example, a system in which a coolant such as water or silicone oil circulates can be used.
- the refrigerant is introduced from, for example, a refrigerant introduction pipe 29 connected to the rotary shaft member 2, flows through the rotary shaft member 2, and is supplied into the can roller 13.
- a motor (not shown) is connected to each of the rotating shaft members 2 of the unwinding roller 11, the winding roller 12, and the can roller 13. By driving these motors, the unwinding roller 11, the winding roller 12, and the can roller 13 rotate to give the film 5 power for running the film 5.
- the arrangement of the unwinding roller 11, the winding roller 12, the can roller 13, and the guide roller 14 is not limited to the arrangement shown in FIG. Further, the number of guide rollers 14 is not limited to four as shown in FIG. 1, and may be any number as long as the desired tension is held on the film 5.
- the gas supply unit 20 supplies a process gas from a process gas supply source 21, a counter electrode 23 arranged to face the can roller 13 below the can roller 13, and a process gas from the gas supply source 21 to the counter electrode 23 side.
- a supply pipe 22 and the like are included.
- the counter electrode 23 is disposed to face the position where the film 5 of the can roller 13 is in contact.
- the counter electrode 23 is provided with an introduction port 23 a through which process gas is introduced from the supply pipe 22.
- a shower plate 25 attached to an insulator 24 arranged around the counter electrode 23 is disposed on the can roller 13 side of the counter electrode 23.
- the shower plate 25 may be formed of a conductor, and the shower plate 25 may constitute a part of the counter electrode 23. Further, the process gas may be introduced from the gas nozzle without using the shower plate.
- the process gas supplied from the supply pipe 22 to the counter electrode 23 via the introduction port 23 a is supplied to the reaction region 27 formed between the can roller 13 and the shower plate 25 via the shower plate 25.
- the counter electrode 23 is set to a ground potential, for example. Accordingly, plasma due to the reaction gas is generated in the reaction region 27 by the RF high-frequency voltage applied between the RF electrode 6 and the roller electrode 18 by the RF power source 3 described later.
- the gas supply unit 20 includes a gas supply pipe 22 such as a gas cylinder corresponding to the gas to be used.
- the process gas is appropriately set depending on the type of process such as plasma processing and etching, and the type of film formed on the film 5 by CVD or the like.
- the film 5 when plasma is generated by introducing argon gas or nitrogen gas, the film 5 can be subjected to plasma treatment to perform surface modification of the film 5.
- plasma treatment to perform surface modification of the film 5.
- the electrode unit 9 includes an RF electrode 6, an RF power source 3 that generates high-frequency power, a matching box 4 that is connected between the RF power source 3 and the RF electrode 6 and performs impedance matching and the like.
- the RF electrode 6 is disposed, for example, so as to leave a predetermined gap between the outer peripheral surface of the portion of the can roller 13 that is not in contact with the film 5, that is, the outer peripheral surface 18 a of the roller electrode 18.
- the gap can be changed as appropriate, but in order to prevent efficient high-frequency propagation and short circuit between the RF electrode 6 and the can roller 13, the optimum distance differs depending on the pressure, but is adjusted to, for example, 1 to 5 mm. It is preferable.
- the electrode unit 9 includes an insulator 7, a holding member 26 that holds the insulator and the RF electrode 6, and the like.
- the holding member 26 is supported by, for example, a support member 8a and a base plate 8b.
- a surface 6a of the RF electrode 6 facing the roller electrode 18 is formed in a shape (for example, an inner surface shape of a cylinder) along the cylindrical shape that is the shape of the outer peripheral surface 18a of the roller electrode 18.
- the RF electrode 6 is provided so as to extend in the direction of the rotation axis of the can roller 13.
- the RF electrode 6 has a length substantially the same as the length of the roller electrode 18 in the direction of the rotation axis or the length of the roller electrode 18. The length is close to.
- the RF voltage is applied to the roller electrode 18 via the gap between the RF electrode 6 and the roller electrode 18.
- plasma due to the process gas is generated in the reaction region 27 between the roller electrode 18 and the counter electrode 23 set at the ground potential.
- the film 5 traveling while being in close contact with the can roller 13 and being cooled or heated is exposed to plasma, and the surface is modified.
- the RF electrode 6 is arranged in the vacuum chamber 15. Therefore, for example, as compared with the case where the rotation introducing unit such as the capacitor coupling described above is disposed in the atmospheric pressure, the roller electrode 18 and the RF electrode can be used as long as the vacuum chamber 15 is maintained at a predetermined degree of vacuum. It is possible to prevent the dielectric breakdown between the six. Further, there is no problem of damage due to heat generation in a rotation introducing unit such as a conventional rotary connector.
- the RF electrode 6 is disposed with a gap in between the roller electrode 18, that is, an AC voltage is applied to the roller electrode 18 in a non-contact manner, there is no wear due to contact, and the life of the RF electrode 6 is extended. be able to.
- the RF electrode 6 Since the RF electrode 6 is provided so as to extend in the rotation axis direction of the can roller 13, charges are uniformly generated in the roller electrode 18 and the RF electrode 6.
- the RF electrode 6 when an AC power source is connected to one end of the rotating shaft member of the can roller via a rotation introducing unit as in the prior art, the longer the length of the can roller in the rotating shaft direction, the other end of the can roller Resistance to supply of electric charge to (the opposite side of the one end) increases.
- such a problem of electrical resistance can be solved, and as a result, plasma by the reactive gas can be uniformly generated in the reaction region 27.
- the RF electrode 6 can be easily increased in size, and the area of the RF electrode 6 facing the roller electrode 18 can be increased.
- FIG. 3 is a cross-sectional view showing an electrode unit according to another embodiment.
- a cooling mechanism is provided in the RF electrode 36 of this electrode unit disposed on the roller electrode 18.
- This cooling mechanism typically has a water channel 37 through which a cooling medium flows.
- a cooling system in which a liquid phase medium circulates in the water channel 37, or a cooling system that uses a phase change of a refrigerant due to refrigerant circulation. Is used.
- the liquid phase medium include water and silicone oil.
- the RF electrode 36 when the RF electrode 36 is cooled by the cooling mechanism, problems due to heat generated from the RF electrode 36, for example, breakage of the RF electrode 36 can be prevented. Further, since the RF electrode 36 is fixed, the water cooling mechanism can be easily installed on the RF electrode 36 as compared with the conventional case where the rotation introducing unit is provided with a cooling mechanism.
- the plasma processing apparatus 100 is taken as an example of the winding type vacuum processing apparatus according to the above embodiment.
- a plasma CVD apparatus, plasma etching, and other apparatuses using plasma can be realized as long as the apparatus can process a flexible object to be processed.
- the arrangement, size, and the like of the RF electrodes 6 and 36 and the counter electrode 23 can be changed as appropriate.
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Abstract
Description
前記チャンバは、真空状態を維持することが可能である。
前記第1の電極は、ローラ型であり、前記チャンバ内で回転可能に設けられ、フレキシブルな処理対象物が接触し、回転することで前記処理対象物を走行させることが可能である。
前記ガス供給ユニットは、前記チャンバ内で前記第1の電極に対向するように配置された第2の電極を有し、前記第1の電極に接触した前記処理対象物と前記第2の電極との間にプロセスガスを供給することが可能である。
前記第3の電極は、前記チャンバ内で前記第1の電極に対向するように配置され、前記交流電源による交流電圧が印加される。
前記チャンバは、真空状態を維持することが可能である。
前記第1の電極は、ローラ型であり、前記チャンバ内で回転可能に設けられ、フレキシブルな処理対象物が接触し、回転することで前記処理対象物を走行させることが可能である。
前記ガス供給ユニットは、前記チャンバ内で前記第1の電極に対向するように配置された第2の電極を有し、前記第1の電極に接触した前記処理対象物と前記第2の電極との間にプロセスガスを供給することが可能である。
前記第3の電極は、前記チャンバ内で前記第1の電極に対向するように配置され、前記交流電源による交流電圧が印加される。
第3の電極は、チャンバ内に配置されているので、チャンバ内が所定の真空度に維持されている場合、第1の電極と第3の電極との間で絶縁破壊の発生を防止することができる。また、第3の電極が第1の電極に所定の隙間をあけて配置されているので、つまり、第1の電極に非接触で交流電圧が加えられるので、接触による磨耗がなく電極の長寿命化を図ることができる。
これにより、第1の電極に接触する処理対象物を冷却または加熱しながら走行させることができる。
5…フィルム
6、36…RF電極
7…絶縁体
9…電極ユニット
10…走行機構
13…キャンローラ
15…真空チャンバ
18…ローラ電極
18a…外周面
20…ガス供給ユニット
21…ガス供給源
22…供給管
23…対向電極
36…RF電極
37…水路
100…プラズマ処理装置
Claims (5)
- 真空状態を維持することが可能なチャンバと、
前記チャンバ内で回転可能に設けられ、フレキシブルな処理対象物が接触し、回転することで前記処理対象物を走行させることが可能なローラ型の第1の電極と、
前記チャンバ内で前記第1の電極に対向するように配置された第2の電極を有し、前記第1の電極に接触した前記処理対象物と前記第2の電極との間にプロセスガスを供給することが可能なガス供給ユニットと、
交流電源に接続され、前記チャンバ内で前記第1の電極に対向するように配置され、前前記第1の電極との間に前記交流電源による交流電圧が印加される第3の電極と、
を具備する巻取式真空処理装置。 - 請求項1に記載の巻取式真空処理装置であって、
前記第1の電極は、前記第1の電極の回転軸方向に延びるように設けられている巻取式真空処理装置。 - 請求項1に記載の巻取式真空処理装置であって、
前記第1の電極は外周面を有し、
前記第3の電極は、前記第1の電極の前記外周面に沿うように前記外周面に対面する面を有する巻取式真空処理装置。 - 請求項1に記載の巻取式真空処理装置であって、
前記第1の電極の冷却または加熱する温度調節機構をさらに具備する巻取式真空処理装置。 - 請求項4に記載の巻取式真空処理装置であって、
前記第3の電極を冷却する冷却機構をさらに具備する巻取式真空処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/127,306 US8673078B2 (en) | 2008-11-05 | 2009-10-27 | Take-up vacuum processing apparatus |
JP2010536651A JP5324596B2 (ja) | 2008-11-05 | 2009-10-27 | 巻取式真空処理装置 |
RU2011122610/02A RU2482219C2 (ru) | 2008-11-05 | 2009-10-27 | Намоточное вакуумированное устройство |
CN2009801422991A CN102197159B (zh) | 2008-11-05 | 2009-10-27 | 卷绕式真空处理装置 |
DE112009002631T DE112009002631A5 (de) | 2008-11-05 | 2009-10-27 | Aufwickel-Vakuumverarbeitungsvorrichtung |
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JP2008-283914 | 2008-11-05 | ||
JP2008283914 | 2008-11-05 |
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WO2010052846A1 true WO2010052846A1 (ja) | 2010-05-14 |
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PCT/JP2009/005652 WO2010052846A1 (ja) | 2008-11-05 | 2009-10-27 | 巻取式真空処理装置 |
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US (1) | US8673078B2 (ja) |
JP (1) | JP5324596B2 (ja) |
KR (1) | KR20110060953A (ja) |
CN (1) | CN102197159B (ja) |
DE (1) | DE112009002631A5 (ja) |
RU (1) | RU2482219C2 (ja) |
TW (1) | TWI498443B (ja) |
WO (1) | WO2010052846A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2013157590A1 (ja) * | 2012-04-19 | 2013-10-24 | 住友化学株式会社 | 積層フィルム |
JP2014065932A (ja) * | 2012-09-25 | 2014-04-17 | Toray Eng Co Ltd | 薄膜形成装置 |
KR20150114974A (ko) * | 2013-01-31 | 2015-10-13 | 어플라이드 머티어리얼스, 인코포레이티드 | 조정가능한 전극을 갖는 증착 소스 |
WO2015170499A1 (ja) * | 2014-05-09 | 2015-11-12 | 東レエンジニアリング株式会社 | 薄膜形成装置 |
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Also Published As
Publication number | Publication date |
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RU2482219C2 (ru) | 2013-05-20 |
JP5324596B2 (ja) | 2013-10-23 |
US8673078B2 (en) | 2014-03-18 |
KR20110060953A (ko) | 2011-06-08 |
TWI498443B (zh) | 2015-09-01 |
RU2011122610A (ru) | 2012-12-20 |
CN102197159A (zh) | 2011-09-21 |
JPWO2010052846A1 (ja) | 2012-04-05 |
DE112009002631A5 (de) | 2011-09-15 |
US20110209830A1 (en) | 2011-09-01 |
TW201026875A (en) | 2010-07-16 |
CN102197159B (zh) | 2013-07-10 |
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