WO2010046284A1 - Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation - Google Patents

Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation Download PDF

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Publication number
WO2010046284A1
WO2010046284A1 PCT/EP2009/063370 EP2009063370W WO2010046284A1 WO 2010046284 A1 WO2010046284 A1 WO 2010046284A1 EP 2009063370 W EP2009063370 W EP 2009063370W WO 2010046284 A1 WO2010046284 A1 WO 2010046284A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor
layer
substrate
silicon
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2009/063370
Other languages
English (en)
French (fr)
Inventor
Rafel FERRÉ I TOMÀS
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/257,233 external-priority patent/US8124502B2/en
Priority claimed from EP08167461A external-priority patent/EP2180531A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to CN2009801422559A priority Critical patent/CN102197497A/zh
Priority to JP2011532591A priority patent/JP2012506629A/ja
Publication of WO2010046284A1 publication Critical patent/WO2010046284A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the semiconductor substrate includes a front side and a back side and the semiconductor compound layer is formed on the front side.

Landscapes

  • Photovoltaic Devices (AREA)
PCT/EP2009/063370 2008-10-23 2009-10-13 Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation Ceased WO2010046284A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2009801422559A CN102197497A (zh) 2008-10-23 2009-10-13 半导体组件制造方法、半导体组件及半导体组件制造设备
JP2011532591A JP2012506629A (ja) 2008-10-23 2009-10-13 半導体デバイス製造方法、半導体デバイス、及び半導体デバイス製造設備

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/257,233 US8124502B2 (en) 2008-10-23 2008-10-23 Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation
EP08167461.6 2008-10-23
EP08167461A EP2180531A1 (en) 2008-10-23 2008-10-23 Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation
US12/257,233 2008-10-23

Publications (1)

Publication Number Publication Date
WO2010046284A1 true WO2010046284A1 (en) 2010-04-29

Family

ID=41809150

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/063370 Ceased WO2010046284A1 (en) 2008-10-23 2009-10-13 Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation

Country Status (5)

Country Link
JP (1) JP2012506629A (https=)
KR (1) KR20110086833A (https=)
CN (1) CN102197497A (https=)
TW (1) TW201030854A (https=)
WO (1) WO2010046284A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018003036A1 (ja) * 2016-06-29 2018-01-04 三菱電機株式会社 太陽電池の製造方法および太陽電池製造装置

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FI126401B (fi) * 2011-09-30 2016-11-15 Aalto-Korkeakoulusäätiö Menetelmä valon indusoiman degradaation vähentämiseksi piisubstraatissa sekä piisubstraattirakenne ja laite, jotka käsittävät piisubstraatin
JP2015519729A (ja) * 2012-04-02 2015-07-09 ヌソラ インコーポレイテッドｎｕｓｏｌａ Ｉｎｃ． 光電変換素子及びその製造方法
CN104425633B (zh) * 2013-08-30 2016-11-16 中国科学院宁波材料技术与工程研究所 一种介质钝化膜和太阳能电池及其制备方法
JP6072129B2 (ja) * 2014-04-30 2017-02-01 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア ドーパント含有ポリマー膜を用いた基体のドーピング
CN107735866B (zh) * 2015-05-29 2021-05-14 松下知识产权经营株式会社 太阳能电池
JP2020113580A (ja) * 2019-01-08 2020-07-27 株式会社ディスコ ゲッタリング層形成方法
CN110707160B (zh) * 2019-10-11 2021-07-16 湖南红太阳光电科技有限公司 一种管式直接PECVD制备太阳电池SiC减反射膜的方法
CN114388638A (zh) * 2020-10-21 2022-04-22 福建新峰二维材料科技有限公司 一种铸锭单晶或多晶硅异质结太阳能电池片的制备方法
CN113782638B (zh) * 2021-09-09 2024-10-22 正泰新能科技股份有限公司 一种电池背钝化结构及其制作方法、太阳能电池
CN113964212B (zh) 2021-09-16 2022-03-18 晶科能源(海宁)有限公司 一种太阳能电池及其制备方法、光伏组件
CN114335249A (zh) * 2021-12-31 2022-04-12 东方日升新能源股份有限公司 N-TOPCon电池及其制作工艺

Citations (1)

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WO2008028625A2 (de) * 2006-09-04 2008-03-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur simultanen dotierung und oxidation von halbleitersubstraten und dessen verwendung

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JPS5467778A (en) * 1977-11-10 1979-05-31 Toshiba Corp Production of semiconductor device
JPS59205758A (ja) * 1983-05-09 1984-11-21 Sanyo Electric Co Ltd トランジスタの製造方法
JPS63136568A (ja) * 1986-11-27 1988-06-08 Fujitsu Ltd 半導体装置
JPH01304737A (ja) * 1988-06-01 1989-12-08 Sony Corp Ｐｎｐバイポーラトランジスタの製造方法
JPH05218400A (ja) * 1992-01-31 1993-08-27 Toyo Electric Mfg Co Ltd 半導体素子
JP3557158B2 (ja) * 2000-07-27 2004-08-25 三洋電機株式会社 高耐圧半導体装置の製造方法
US20070137692A1 (en) * 2005-12-16 2007-06-21 Bp Corporation North America Inc. Back-Contact Photovoltaic Cells
CN100536177C (zh) * 2008-01-29 2009-09-02 江阴浚鑫科技有限公司 晶体硅太阳能电池的热处理方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008028625A2 (de) * 2006-09-04 2008-03-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur simultanen dotierung und oxidation von halbleitersubstraten und dessen verwendung

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
BENTZEN A ET AL: "Gettering of transition metal impurities during phosphorus emitter diffusion in multicrystalline silicon solar cell processing", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 99, no. 9, 15 May 2006 (2006-05-15), pages 93509 - 093509, XP012084987, ISSN: 0021-8979 *
LAUTENSCHLAGER H ET AL: "MC-silicon solar cells with <17% efficiency", CONFERENCE RECORD OF THE 26TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 19970929; 19970929 - 19971003 NEW YORK, NY : IEEE, US, 29 September 1997 (1997-09-29), pages 7 - 12, XP010267716, ISBN: 978-0-7803-3767-1 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018003036A1 (ja) * 2016-06-29 2018-01-04 三菱電機株式会社 太陽電池の製造方法および太陽電池製造装置

Also Published As

Publication number Publication date
TW201030854A (en) 2010-08-16
JP2012506629A (ja) 2012-03-15
KR20110086833A (ko) 2011-08-01
CN102197497A (zh) 2011-09-21

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