CN102197497A - 半导体组件制造方法、半导体组件及半导体组件制造设备 - Google Patents

半导体组件制造方法、半导体组件及半导体组件制造设备 Download PDF

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Publication number
CN102197497A
CN102197497A CN2009801422559A CN200980142255A CN102197497A CN 102197497 A CN102197497 A CN 102197497A CN 2009801422559 A CN2009801422559 A CN 2009801422559A CN 200980142255 A CN200980142255 A CN 200980142255A CN 102197497 A CN102197497 A CN 102197497A
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CN
China
Prior art keywords
layer
semiconductor
silicon
substrate
semiconductor substrate
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Pending
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CN2009801422559A
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English (en)
Chinese (zh)
Inventor
拉斐尔·费雷·I·托马斯
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Applied Materials Inc
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Applied Materials Inc
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Filing date
Publication date
Priority claimed from US12/257,233 external-priority patent/US8124502B2/en
Priority claimed from EP08167461A external-priority patent/EP2180531A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN102197497A publication Critical patent/CN102197497A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
CN2009801422559A 2008-10-23 2009-10-13 半导体组件制造方法、半导体组件及半导体组件制造设备 Pending CN102197497A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12/257,233 US8124502B2 (en) 2008-10-23 2008-10-23 Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation
EP08167461.6 2008-10-23
EP08167461A EP2180531A1 (en) 2008-10-23 2008-10-23 Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation
US12/257,233 2008-10-23
PCT/EP2009/063370 WO2010046284A1 (en) 2008-10-23 2009-10-13 Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation

Publications (1)

Publication Number Publication Date
CN102197497A true CN102197497A (zh) 2011-09-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801422559A Pending CN102197497A (zh) 2008-10-23 2009-10-13 半导体组件制造方法、半导体组件及半导体组件制造设备

Country Status (5)

Country Link
JP (1) JP2012506629A (https=)
KR (1) KR20110086833A (https=)
CN (1) CN102197497A (https=)
TW (1) TW201030854A (https=)
WO (1) WO2010046284A1 (https=)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104425633A (zh) * 2013-08-30 2015-03-18 中国科学院宁波材料技术与工程研究所 一种介质钝化膜和太阳能电池及其制备方法
CN105308757B (zh) * 2011-09-30 2017-07-14 阿尔托大学理工学院 用于减少硅衬底中的过量载流子引起的劣化的方法
CN109920843A (zh) * 2014-04-30 2019-06-21 加利福尼亚大学董事会 通过含掺杂剂的聚合物膜对基材进行掺杂
CN110707160A (zh) * 2019-10-11 2020-01-17 湖南红太阳光电科技有限公司 一种管式直接PECVD制备太阳电池SiC减反射膜的方法
CN113782638A (zh) * 2021-09-09 2021-12-10 海宁正泰新能源科技有限公司 一种电池背钝化结构及其制作方法、太阳能电池
CN114335249A (zh) * 2021-12-31 2022-04-12 东方日升新能源股份有限公司 N-TOPCon电池及其制作工艺
CN114388638A (zh) * 2020-10-21 2022-04-22 福建新峰二维材料科技有限公司 一种铸锭单晶或多晶硅异质结太阳能电池片的制备方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015519729A (ja) * 2012-04-02 2015-07-09 ヌソラ インコーポレイテッドｎｕｓｏｌａ Ｉｎｃ． 光電変換素子及びその製造方法
CN107735866B (zh) * 2015-05-29 2021-05-14 松下知识产权经营株式会社 太阳能电池
WO2018003036A1 (ja) * 2016-06-29 2018-01-04 三菱電機株式会社 太陽電池の製造方法および太陽電池製造装置
JP2020113580A (ja) * 2019-01-08 2020-07-27 株式会社ディスコ ゲッタリング層形成方法
CN113964212B (zh) 2021-09-16 2022-03-18 晶科能源(海宁)有限公司 一种太阳能电池及其制备方法、光伏组件

Citations (2)

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DE102006041424A1 (de) * 2006-09-04 2008-03-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur simultanen Dotierung und Oxidation von Halbleitersubstraten und dessen Verwendung
CN101241954A (zh) * 2008-01-29 2008-08-13 江阴浚鑫科技有限公司 晶体硅太阳能电池的热处理方法

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JPS5467778A (en) * 1977-11-10 1979-05-31 Toshiba Corp Production of semiconductor device
JPS59205758A (ja) * 1983-05-09 1984-11-21 Sanyo Electric Co Ltd トランジスタの製造方法
JPS63136568A (ja) * 1986-11-27 1988-06-08 Fujitsu Ltd 半導体装置
JPH01304737A (ja) * 1988-06-01 1989-12-08 Sony Corp Ｐｎｐバイポーラトランジスタの製造方法
JPH05218400A (ja) * 1992-01-31 1993-08-27 Toyo Electric Mfg Co Ltd 半導体素子
JP3557158B2 (ja) * 2000-07-27 2004-08-25 三洋電機株式会社 高耐圧半導体装置の製造方法
US20070137692A1 (en) * 2005-12-16 2007-06-21 Bp Corporation North America Inc. Back-Contact Photovoltaic Cells

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006041424A1 (de) * 2006-09-04 2008-03-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur simultanen Dotierung und Oxidation von Halbleitersubstraten und dessen Verwendung
CN101241954A (zh) * 2008-01-29 2008-08-13 江阴浚鑫科技有限公司 晶体硅太阳能电池的热处理方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105308757B (zh) * 2011-09-30 2017-07-14 阿尔托大学理工学院 用于减少硅衬底中的过量载流子引起的劣化的方法
CN104425633A (zh) * 2013-08-30 2015-03-18 中国科学院宁波材料技术与工程研究所 一种介质钝化膜和太阳能电池及其制备方法
CN104425633B (zh) * 2013-08-30 2016-11-16 中国科学院宁波材料技术与工程研究所 一种介质钝化膜和太阳能电池及其制备方法
CN109920843A (zh) * 2014-04-30 2019-06-21 加利福尼亚大学董事会 通过含掺杂剂的聚合物膜对基材进行掺杂
CN110707160A (zh) * 2019-10-11 2020-01-17 湖南红太阳光电科技有限公司 一种管式直接PECVD制备太阳电池SiC减反射膜的方法
CN110707160B (zh) * 2019-10-11 2021-07-16 湖南红太阳光电科技有限公司 一种管式直接PECVD制备太阳电池SiC减反射膜的方法
CN114388638A (zh) * 2020-10-21 2022-04-22 福建新峰二维材料科技有限公司 一种铸锭单晶或多晶硅异质结太阳能电池片的制备方法
CN113782638A (zh) * 2021-09-09 2021-12-10 海宁正泰新能源科技有限公司 一种电池背钝化结构及其制作方法、太阳能电池
CN114335249A (zh) * 2021-12-31 2022-04-12 东方日升新能源股份有限公司 N-TOPCon电池及其制作工艺

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Publication number Publication date
TW201030854A (en) 2010-08-16
JP2012506629A (ja) 2012-03-15
KR20110086833A (ko) 2011-08-01
WO2010046284A1 (en) 2010-04-29

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Application publication date: 20110921