WO2010029882A1 - 有機エレクトロルミネッセンス素子製造用のインキ、有機エレクトロルミネッセンス素子の製造方法、および表示装置 - Google Patents
有機エレクトロルミネッセンス素子製造用のインキ、有機エレクトロルミネッセンス素子の製造方法、および表示装置 Download PDFInfo
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- WO2010029882A1 WO2010029882A1 PCT/JP2009/065353 JP2009065353W WO2010029882A1 WO 2010029882 A1 WO2010029882 A1 WO 2010029882A1 JP 2009065353 W JP2009065353 W JP 2009065353W WO 2010029882 A1 WO2010029882 A1 WO 2010029882A1
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- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical class C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- NRNFFDZCBYOZJY-UHFFFAOYSA-N p-quinodimethane Chemical compound C=C1C=CC(=C)C=C1 NRNFFDZCBYOZJY-UHFFFAOYSA-N 0.000 description 1
- DGBWPZSGHAXYGK-UHFFFAOYSA-N perinone Chemical class C12=NC3=CC=CC=C3N2C(=O)C2=CC=C3C4=C2C1=CC=C4C(=O)N1C2=CC=CC=C2N=C13 DGBWPZSGHAXYGK-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- FIZIRKROSLGMPL-UHFFFAOYSA-N phenoxazin-1-one Chemical compound C1=CC=C2N=C3C(=O)C=CC=C3OC2=C1 FIZIRKROSLGMPL-UHFFFAOYSA-N 0.000 description 1
- UOMHBFAJZRZNQD-UHFFFAOYSA-N phenoxazone Natural products C1=CC=C2OC3=CC(=O)C=CC3=NC2=C1 UOMHBFAJZRZNQD-UHFFFAOYSA-N 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 150000003057 platinum Chemical class 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920005596 polymer binder Polymers 0.000 description 1
- 239000002491 polymer binding agent Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 150000004033 porphyrin derivatives Chemical class 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- JEXVQSWXXUJEMA-UHFFFAOYSA-N pyrazol-3-one Chemical class O=C1C=CN=N1 JEXVQSWXXUJEMA-UHFFFAOYSA-N 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910001952 rubidium oxide Inorganic materials 0.000 description 1
- CWBWCLMMHLCMAM-UHFFFAOYSA-M rubidium(1+);hydroxide Chemical compound [OH-].[Rb+].[Rb+] CWBWCLMMHLCMAM-UHFFFAOYSA-M 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical class C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
- 229910001637 strontium fluoride Inorganic materials 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 150000003518 tetracenes Chemical class 0.000 description 1
- VLLMWSRANPNYQX-UHFFFAOYSA-N thiadiazole Chemical compound C1=CSN=N1.C1=CSN=N1 VLLMWSRANPNYQX-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 150000001651 triphenylamine derivatives Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
Definitions
- the present invention relates to an ink used for forming an organic layer of an organic electroluminescence element (hereinafter sometimes referred to as an organic EL element) by a printing method, a method for producing an organic EL element using the ink, and a display device.
- an organic EL element an organic electroluminescence element
- the organic EL element includes a pair of electrodes and an organic layer provided between the pair of electrodes, and includes at least one light emitting layer as the organic layer.
- the organic EL element emits light by recombination of holes and electrons injected from the pair of electrodes in the light emitting layer.
- ink is applied to a letterpress with a pattern of predetermined protrusions, and the ink is then applied in a pattern by transferring the attached ink to a substrate such as a substrate. Since the thickness of the organic layer is usually as thin as 1 ⁇ m or less, the ink deposited on the relief plate is also thin according to the thickness of the organic layer. When such a thin film ink is attached to the relief printing plate, the ink dries in a state where it adheres to the relief printing plate before the ink is transferred to the printing material, and the viscosity of the ink increases.
- the ink adhered to the relief printing plate can be transferred by using a solvent that is difficult to dry.
- the solvent that is difficult to dry is used, the ink that has been transferred to the substrate remains.
- the amount of solvent is relatively large and the viscosity is relatively low.
- the ink transferred to the printing material is deformed in the direction of decreasing the surface area by surface tension.
- the shape of the ink is deformed after the transfer due to the surface tension, and the cross-sectional shape becomes a dome shape. Since the ink is dried while maintaining this shape, a dome-shaped organic layer is formed in the cross-sectional shape. Therefore, there is a problem that it is difficult to form an organic layer having a uniform thickness with the conventional technology. .
- an object of the present invention is to provide an ink for producing an organic EL device capable of forming an organic layer having a uniform film thickness.
- the organic layer of an organic electroluminescence element which includes a first solvent having a boiling point of 220 ° C. or more and a constituent material of the organic layer, and has a surface tension of less than 34 mN / m by a printing method.
- ink [2] The ink according to [1], wherein the ratio of the first solvent to 100 parts by weight of the ink is 5 parts by weight or more and less than 40 parts by weight.
- the ink according to [1] or [2] further including a second solvent having a boiling point of 150 ° C. or higher and lower than 220 ° C.
- the manufacturing method of an organic electroluminescent element including the process of forming.
- the film thickness is uniform by a printing method.
- An organic layer can be formed.
- FIG. 1 is a diagram showing a cross-sectional shape of an organic layer of Example 1.
- FIG. 2 is a diagram showing a cross-sectional shape of the organic layer of Example 2.
- FIG. 3 is a diagram showing a cross-sectional shape of the organic layer of Example 3.
- the ink of the present embodiment is used when forming the organic layer of an organic electroluminescence element comprising a pair of electrodes and an organic layer provided between the electrodes by a printing method.
- the ink of the present embodiment includes a first solvent having a boiling point of 220 ° C. or higher and a constituent material of the organic layer. Furthermore, the ink of the present embodiment is characterized in that the surface tension of the ink is less than 34 mN / m.
- Examples of the printing method include a relief printing method, an intaglio printing method, a gravure printing method, a lithographic printing method, and an offset printing method.
- the relief printing method is preferable, and the flexographic printing method is more preferable.
- an organic layer having a uniform film thickness is formed. can do.
- ink is attached to the convex portions of the relief plate wound around the impression cylinder, and the relief printing plate is pressed against the printing material while rotating the relief printing plate with the impression cylinder, thereby providing a pattern ink corresponding to the relief printing pattern. Can be transferred to the substrate.
- the relief printing plate is preferably a flexographic printing plate made of an elastic material such as a resin, and examples of such an elastic material include a polyester resin.
- a method for attaching ink to the relief plate there is a method in which a thin film of ink is formed on the surface of the roller in advance, and the relief plate is brought into contact with this roller to cause the ink to adhere to the convex portion of the relief plate.
- an ink thin film can be formed on the surface of the roller by immersing the ink in a liquid storage tank while rotating the roller. Further, by removing excess ink with a blade or the like, it is possible to form ink having a desired film thickness on the roller surface. In this way, a thin film of ink is formed in advance on the surface of the roller, and the two are rotated with each other in contact with the roller and the relief printing plate. Can be selectively attached to the protrusions.
- the ink used in the present embodiment includes the first solvent having a boiling point of 220 ° C. or higher that is relatively difficult to dry, the ink can be prevented from drying before being transferred to the printing material. Therefore, the ink when transferred from the letterpress to the printing material has a relatively large amount of solvent and maintains a relatively low viscosity state.
- the ink transferred to the printing material has a surface tension in a direction that reduces the surface area. However, since the ink of this embodiment has a surface tension of less than 34 mN / m, deformation due to the surface tension is suppressed.
- the cross-sectional shape By properly balancing the viscosity and surface tension, the cross-sectional shape will not be deformed as it becomes a dome shape, and the surface unevenness when transferred will be relaxed and deformed to a flat surface. Since the drying is performed while the cross-sectional shape at the time of transfer is maintained in a substantially rectangular shape, an organic layer having a uniform film thickness with a flat surface and a substantially rectangular cross-sectional shape can be formed.
- Examples of the first solvent having a boiling point of 220 ° C. or higher include cyclohexylbenzene (CHB).
- the ratio of the first solvent in the ink is preferably 5 parts by weight or more and less than 40 parts by weight, and more preferably 5 parts by weight or more and less than 20 parts by weight.
- the surface tension of the ink is preferably 25 mN / m or more.
- the solvent of the ink may be composed of only the first solvent described above, but preferably further includes a second solvent having a boiling point of 150 ° C. or higher and lower than 220 ° C. That is, the ink preferably contains a second solvent that exhibits quicker drying properties than the first solvent.
- the ink when transferred to the printing material is in a state where the second solvent is appropriately dried and the viscosity is appropriately high,
- the ink transferred to the substrate can maintain a substantially rectangular cross-sectional shape. Therefore, by using such an ink, it is possible to form an organic layer having a uniform film thickness with a flat surface and a substantially rectangular cross-sectional shape.
- Examples of the second solvent having a boiling point of 150 ° C. or higher and lower than 220 ° C. include cyclohexanone, tetralin, and anisole.
- the ratio of the second solvent to 100 parts by weight of ink is preferably 20 parts by weight or more and less than 50 parts by weight.
- the ink preferably further contains a third solvent having a boiling point of less than 150 ° C. That is, the ink preferably contains a third solvent that exhibits faster drying than the first and second solvents, and the ink containing the first solvent and the third solvent, or the first solvent, the second solvent, and the third solvent. Ink containing is preferred.
- the third solvent exhibiting quick drying in this way, when the ink is adhered from the roller to the relief printing plate, the third solvent is appropriately dried and the viscosity of the ink is appropriately increased.
- the letterpress comes into contact, the ink is easily held on the letterpress and it becomes easy to selectively supply ink to the convex part of the letterpress.
- Examples of the third solvent having a boiling point of less than 150 ° C. include toluene, chloroform, and xylene.
- the ratio of the third solvent with respect to 100 parts by weight of the ink is preferably 50 parts by weight or more and less than 70 parts by weight.
- the ratio of the constituent material of the organic layer to 100 parts by weight of the ink is usually 0.1 part by weight or more and less than 5 parts by weight, preferably 0.5 part by weight or more and less than 3 parts by weight, and preferably 1 part by weight or more and less than 2 parts by weight. Further preferred.
- a solvent having a low surface tension may be selected and used, and a solvent having a small surface tension may be selected and used particularly for a solvent having a large proportion of ink.
- the surface tension of the ink may be measured by a plate method.
- the organic EL element includes a pair of electrodes and an organic layer provided between the pair of electrodes, and includes at least one light emitting layer as the organic layer.
- the organic EL element is usually formed on a substrate.
- a substrate for example, in an active matrix display device, a plurality of organic EL elements are formed on a TFT (Thin Film Transistor) substrate.
- TFT Thin Film Transistor
- a passive matrix display device a plurality of organic EL elements are formed on a substrate on which predetermined wirings are formed.
- An EL element is formed.
- the organic EL element is manufactured by forming a pair of electrodes and an organic layer provided between the electrodes, and specifically, by sequentially stacking components of the organic EL element sequentially from the substrate. .
- the organic EL element includes at least a light emitting layer between an anode and a cathode, which are electrodes, but may further include a layer different from the light emitting layer.
- the layer provided between the cathode and the light emitting layer include an electron injection layer, an electron transport layer, and a hole blocking layer.
- the layer in contact with the cathode is referred to as an electron injection layer, and the layer excluding this electron injection layer is referred to as an electron transport layer.
- the electron injection layer is a layer having a function of improving the electron injection efficiency from the cathode.
- the electron transport layer is a layer having a function of improving electron injection from the cathode, the electron injection layer, or the electron transport layer closer to the cathode.
- the hole blocking layer is a layer having a function of blocking hole transport. In the case where the electron injection layer and / or the electron transport layer have a function of blocking hole transport, these layers may also serve as the hole blocking layer.
- the hole blocking layer has a function of blocking hole transport makes it possible, for example, to produce an element that allows only hole current to flow, and confirm the blocking effect by reducing the current value.
- Examples of the layer provided between the anode and the light emitting layer include a hole injection layer, a hole transport layer, and an electron block layer.
- the layer in contact with the anode is called a hole injection layer, and the layers other than the hole injection layer are positive. It is called a hole transport layer.
- the hole injection layer is a layer having a function of improving hole injection efficiency from the anode.
- the hole transport layer is a layer having a function of improving hole injection from the anode, the hole injection layer, or the hole transport layer closer to the anode.
- the electron blocking layer is a layer having a function of blocking electron transport. In the case where the hole injection layer and / or the hole transport layer has a function of blocking electron transport, these layers may also serve as an electron blocking layer.
- the electron blocking layer has a function of blocking electron transport makes it possible, for example, to produce an element that allows only electron current to flow, and confirm the blocking effect by reducing the current value.
- the electron injection layer and the hole injection layer may be collectively referred to as a charge injection layer, and the electron transport layer and the hole transport layer may be collectively referred to as a charge transport layer.
- anode / light emitting layer / cathode b) anode / hole injection layer / light emitting layer / cathode c) anode / hole injection layer / light emitting layer / electron injection layer / cathode d) anode / hole injection layer / light emitting layer / Electron transport layer / cathode e) anode / hole injection layer / light emitting layer / electron transport layer / electron injection layer / cathode f) anode / hole transport layer / light emitting layer / cathode g) anode / hole transport layer / light emitting layer / Electron injection layer / cathode h) anode / hole transport layer / light emitting layer / electron transport layer / cathode i) anode / hole transport layer / light emitting layer / light emitting layer /
- the organic EL device of the present embodiment may have two or more light emitting layers, and as the organic EL device having two light emitting layers, any one of the layer configurations of a) to p) above may be used.
- the laminate sandwiched between the anode and the cathode is referred to as “repeating unit A”, the following layer configuration shown in q) can be given.
- the charge generation layer is a layer that generates holes and electrons by applying an electric field.
- Examples of the charge generation layer include a thin film made of vanadium oxide, indium tin oxide (abbreviated as ITO), molybdenum oxide, or the like.
- the organic EL element may be provided on the substrate or may be covered with a sealing member such as a sealing film or a sealing plate for sealing.
- a sealing member such as a sealing film or a sealing plate for sealing.
- the anode is usually disposed on the substrate side, but the cathode may be disposed on the substrate side.
- the organic EL device of the present embodiment in order to extract light from the light emitting layer to the outside, all the layers arranged on the side from which light is extracted with respect to the light emitting layer are usually made translucent. Yes.
- a bottom emission type organic EL element that extracts light from the substrate side may be configured, or a top emission type organic EL element that extracts light from the side opposite to the substrate may be configured.
- the substrate one that does not change in the process of manufacturing the organic EL element is suitably used.
- glass, plastic, a polymer film, a silicon substrate, and a laminate of these are used.
- the substrate can be a commercially available substrate or can be manufactured by a known method.
- a transparent or translucent electrode is used for the anode.
- the transparent electrode or translucent electrode thin films of metal oxides, metal sulfides, metals, and the like having high electrical conductivity can be used, and those having high light transmittance are preferably used.
- a thin film made of indium oxide, zinc oxide, tin oxide, ITO, indium zinc oxide (abbreviated as IZO), gold, platinum, silver, copper, or the like is used.
- ITO A thin film made of IZO or tin oxide is preferably used.
- an organic transparent conductive film such as polyaniline or a derivative thereof, polythiophene or a derivative thereof may be used as the anode.
- a material that reflects light may be used for the anode, and the material is preferably a metal, metal oxide, or metal sulfide having a work function of 3.0 eV or more.
- the film thickness of the anode can be appropriately selected in consideration of light transmittance and electric conductivity, and is, for example, 10 nm to 10 ⁇ m, preferably 20 nm to 1 ⁇ m, and more preferably 50 nm to 500 nm. .
- ⁇ Hole injection layer Constituent materials of the hole injection layer include oxides such as vanadium oxide, molybdenum oxide, ruthenium oxide, and aluminum oxide, phenylamine-based, starburst-type amine-based, phthalocyanine-based, amorphous carbon, polyaniline, and polythiophene derivatives.
- oxides such as vanadium oxide, molybdenum oxide, ruthenium oxide, and aluminum oxide, phenylamine-based, starburst-type amine-based, phthalocyanine-based, amorphous carbon, polyaniline, and polythiophene derivatives.
- the organic substance can be mentioned.
- the film thickness of the hole injection layer varies depending on the material used, and is set as appropriate so that the drive voltage and light emission efficiency are appropriate. If it is thick, the driving voltage of the element may be increased. Therefore, the thickness of the hole injection layer is, for example, 1 nm to 1 ⁇ m, preferably 2 nm to 500 nm, and more preferably 5 nm to 200 nm.
- the constituent material of the hole transport layer includes polyvinyl carbazole or derivatives thereof, polysilane or derivatives thereof, polysiloxane derivatives having aromatic amines in the side chain or main chain, pyrazoline derivatives, arylamine derivatives, stilbene derivatives, triphenyldiamine derivatives. , Polyaniline or derivatives thereof, polythiophene or derivatives thereof, polyarylamine or derivatives thereof, polypyrrole or derivatives thereof, poly (p-phenylenevinylene) or derivatives thereof, or poly (2,5-thienylenevinylene) or derivatives thereof, etc. Organic substances can be mentioned.
- hole transport materials include polyvinyl carbazole or derivatives thereof, polysilane or derivatives thereof, polysiloxane derivatives having aromatic amine compound groups in the side chain or main chain, polyaniline or derivatives thereof, polythiophene or derivatives thereof, poly Polymeric hole transport materials such as arylamine or derivatives thereof, poly (p-phenylene vinylene) or derivatives thereof, or poly (2,5-thienylene vinylene) or derivatives thereof are preferred, and polyvinylcarbazole or derivatives thereof are more preferred. , Polysilane or a derivative thereof, and a polysiloxane derivative having an aromatic amine in the side chain or main chain. In the case of a low-molecular hole transport material, it is preferably used by being dispersed in a polymer binder.
- the film thickness of the hole transport layer As the film thickness of the hole transport layer, the optimum value varies depending on the material to be used, the drive voltage and the light emission efficiency are appropriately set so as to have an appropriate value, and at least a thickness that does not cause pinholes is required. If it is too thick, the drive voltage of the element may be increased. Accordingly, the thickness of the hole transport layer is, for example, 1 nm to 1 ⁇ m, preferably 2 nm to 500 nm, and more preferably 5 nm to 200 nm.
- the light emitting layer is usually formed of an organic substance that mainly emits fluorescence and / or phosphorescence, or an organic substance and a dopant that assists the organic substance.
- the dopant is added, for example, in order to improve the luminous efficiency and change the emission wavelength.
- the organic substance may be a low molecular compound or a high molecular compound, and the light emitting layer preferably contains a high molecular compound having a polystyrene-equivalent number average molecular weight of 10 3 to 10 8 .
- the constituent material of the light emitting layer include the following dye materials, metal complex materials, polymer materials, and dopant materials.
- dye-based materials include cyclopentamine derivatives, tetraphenylbutadiene derivative compounds, triphenylamine derivatives, oxadiazole derivatives, pyrazoloquinoline derivatives, distyrylbenzene derivatives, distyrylarylene derivatives, pyrrole derivatives, thiophene ring compounds. Pyridine ring compounds, perinone derivatives, perylene derivatives, oligothiophene derivatives, oxadiazole dimers, pyrazoline dimers, quinacridone derivatives, coumarin derivatives, and the like.
- Metal complex materials examples of the metal complex material include Al, Zn, Be, etc.
- Examples include metal complexes having a quinoline structure, such as metal complexes having light emission from triplet excited states such as iridium complexes and platinum complexes, aluminum quinolinol complexes, benzoquinolinol beryllium complexes, benzoxazolyl zinc complexes, benzoates. Examples include a thiazole zinc complex, an azomethyl zinc complex, a porphyrin zinc complex, and a europium complex.
- Polymer material As polymer materials, polyparaphenylene vinylene derivatives, polythiophene derivatives, polyparaphenylene derivatives, polysilane derivatives, polyacetylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, the above dye materials and metal complex light emitting materials are polymerized. The thing etc. can be mentioned.
- materials that emit blue light include distyrylarylene derivatives, oxadiazole derivatives, and polymers thereof, polyvinylcarbazole derivatives, polyparaphenylene derivatives, polyfluorene derivatives, and the like.
- polymer materials such as polyvinyl carbazole derivatives, polyparaphenylene derivatives, and polyfluorene derivatives are preferred.
- examples of materials that emit green light include quinacridone derivatives, coumarin derivatives, and polymers thereof, polyparaphenylene vinylene derivatives, polyfluorene derivatives, and the like. Of these, polymer materials such as polyparaphenylene vinylene derivatives and polyfluorene derivatives are preferred.
- Examples of materials that emit red light include coumarin derivatives, thiophene ring compounds, and polymers thereof, polyparaphenylene vinylene derivatives, polythiophene derivatives, and polyfluorene derivatives. Among these, polymer materials such as polyparaphenylene vinylene derivatives, polythiophene derivatives, and polyfluorene derivatives are preferable.
- Examples of the dopant material include perylene derivatives, coumarin derivatives, rubrene derivatives, quinacridone derivatives, squalium derivatives, porphyrin derivatives, styryl dyes, tetracene derivatives, pyrazolone derivatives, decacyclene, phenoxazone, and the like.
- the thickness of such a light emitting layer is usually about 2 nm to 200 nm.
- Electrode transport material constituting the electron transport layer
- known materials can be used, such as oxadiazole derivatives, anthraquinodimethane or derivatives thereof, benzoquinone or derivatives thereof, naphthoquinone or derivatives thereof, anthraquinones or derivatives thereof, tetracyanoanthra Quinodimethane or derivatives thereof, fluorenone derivatives, diphenyldicyanoethylene or derivatives thereof, diphenoquinone derivatives, or metal complexes of 8-hydroxyquinoline or derivatives thereof, polyquinoline or derivatives thereof, polyquinoxaline or derivatives thereof, polyfluorene or derivatives thereof, etc. Can be mentioned.
- electron transport materials include oxadiazole derivatives, benzoquinone or derivatives thereof, anthraquinones or derivatives thereof, metal complexes of 8-hydroxyquinoline or derivatives thereof, polyquinoline or derivatives thereof, polyquinoxaline or derivatives thereof, polyfluorenes Or a derivative thereof, preferably 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole, benzoquinone, anthraquinone, tris (8-quinolinol) aluminum, and polyquinoline. preferable.
- the film thickness of the electron transport layer varies depending on the material used, and is set appropriately so that the drive voltage and the light emission efficiency are appropriate, and at least a thickness that does not cause pinholes is required, and is too thick. Then, the driving voltage of the element may be increased. Therefore, the film thickness of the electron transport layer is, for example, 1 nm to 1 ⁇ m, preferably 2 nm to 500 nm, and more preferably 5 nm to 200 nm.
- an optimum material is appropriately selected according to the type of the light emitting layer, and an alloy containing at least one of alkali metal, alkaline earth metal, alkali metal and alkaline earth metal, alkali A metal or alkaline earth metal oxide, halide, carbonate, or a mixture of these substances can be given.
- alkali metals, alkali metal oxides, halides, and carbonates include lithium, sodium, potassium, rubidium, cesium, lithium oxide, lithium fluoride, sodium oxide, sodium fluoride, potassium oxide, potassium fluoride , Rubidium oxide, rubidium fluoride, cesium oxide, cesium fluoride, lithium carbonate, and the like.
- alkaline earth metals, alkaline earth metal oxides, halides and carbonates include magnesium, calcium, barium, strontium, magnesium oxide, magnesium fluoride, calcium oxide, calcium fluoride, barium oxide, Examples thereof include barium fluoride, strontium oxide, strontium fluoride, and magnesium carbonate.
- the electron injection layer may be composed of a laminate in which two or more layers are laminated, and examples thereof include LiF / Ca.
- the thickness of the electron injection layer is preferably about 1 nm to 1 ⁇ m.
- a material for the cathode is preferably a material having a low work function, easy electron injection into the light emitting layer, and high electrical conductivity. Moreover, in the organic EL element which takes out light from the anode side, since the light from the light emitting layer is reflected to the anode side by the cathode, a material having a high visible light reflectance is preferable as the cathode material.
- a material having a high visible light reflectance is preferable as the cathode material.
- an alkali metal, an alkaline earth metal, a transition metal, a Group 13 metal of the periodic table, or the like can be used.
- cathode material examples include lithium, sodium, potassium, rubidium, cesium, beryllium, magnesium, calcium, strontium, barium, aluminum, scandium, vanadium, zinc, yttrium, indium, cerium, samarium, europium, terbium, ytterbium, and the like.
- An alloy, graphite, or a graphite intercalation compound is used.
- alloys include magnesium-silver alloys, magnesium-indium alloys, magnesium-aluminum alloys, indium-silver alloys, lithium-aluminum alloys, lithium-magnesium alloys, lithium-indium alloys, calcium-aluminum alloys, and the like.
- a transparent conductive electrode made of a conductive metal oxide, a conductive organic material, or the like can be used.
- the conductive metal oxide include indium oxide, zinc oxide, tin oxide, ITO, and IZO
- examples of the conductive organic substance include polyaniline or a derivative thereof, polythiophene or a derivative thereof, and the like.
- the cathode may be composed of a laminate in which two or more layers are laminated. In some cases, the electron injection layer is used as a cathode.
- the film thickness of the cathode is appropriately set in consideration of electric conductivity and durability, and is, for example, 10 nm to 10 ⁇ m, preferably 20 nm to 1 ⁇ m, and more preferably 50 nm to 500 nm.
- the organic EL element can be formed by sequentially laminating the components of the organic EL element described above.
- Examples of the method for producing the anode include a vacuum deposition method, a sputtering method, an ion plating method, and a plating method.
- the organic layer containing an organic material can be formed by a printing method using the ink containing the constituent material of the organic layer of the present embodiment described above.
- One of them is formed by a printing method using the ink containing the constituent material of the organic layer of the present embodiment described above.
- the layer containing an organic substance corresponds to the organic layer, and at least one of the organic layers is the above-described layer.
- the ink containing the constituent material of the organic layer of the present embodiment is formed by a printing method.
- the constituent material of the organic layer is a material that becomes the organic layer after the ink is formed into a film.
- the material before cross-linking corresponds to the constituent material of the organic layer. .
- the constituent material of the organic layer contains a low molecular compound and / or a high molecular compound, and is preferably a high molecular compound from the viewpoint of solubility.
- the polymer compound preferably has a polystyrene-equivalent number average molecular weight of 10 3 to 10 8 .
- the organic layer containing an organic substance is preferably formed by a printing method using the ink described above if the constituent material of each organic layer described above is soluble in a solvent.
- the organic layer that cannot be formed using the printing method, the organic layer that can be formed by a simpler method than the printing method, and the inorganic layer may be formed by other methods without being limited to the printing method, For example, it can be formed by vapor deposition or sputtering.
- At least 1 layer of the organic layers containing organic substance is formed by the printing method using the ink mentioned above,
- the other organic layer is a spin coat method.
- it may be formed by a coating method such as a casting method, a micro gravure coating method, a gravure coating method, a bar coating method, a roll coating method, a wire bar coating method, a dip coating method, a spray coating method, or an ink jet printing method.
- Examples of the method for producing the cathode include a vacuum deposition method, a sputtering method, and a laminating method in which a metal thin film is thermocompression bonded.
- a color display device it is necessary to selectively apply light emitting materials that emit light in three kinds of colors (red, green, and blue) to selectively form three kinds of organic EL elements.
- three kinds of inks of the present embodiment each containing a luminescent material that emits each color
- the light emitting layers having different colors that emit light sequentially by the printing method for each of the three types of colors.
- three types of organic EL elements can be selectively formed.
- the organic EL element described above can be suitably used for a curved or flat illumination device, for example, a planar light source used as a light source of a scanner, and a display device.
- Examples of display devices including organic EL elements include segment display devices and dot matrix display devices.
- the dot matrix display device includes an active matrix display device and a passive matrix display device.
- An organic EL element is used as a light emitting element constituting each pixel in an active matrix display device and a passive matrix display device.
- the organic EL element is used as a light emitting element constituting each segment in the segment display device, and is used as a backlight in the liquid crystal display device.
- first ink Three types of inks (first ink, second ink, and third ink) were prepared, and the first ink, the second ink, and the third ink were each printed on a glass substrate using a flexographic printing apparatus.
- Each ink was prepared so as to contain 1.5% by mass of a polymer light-emitting material (Lumation GP1300, manufactured by Sumation Corporation).
- Table 1 shows the ratio of the solvents (first solvent, second solvent, third solvent) contained in each ink and the surface tension of the ink.
- the remaining total solvent of the ink excluding the polymer light-emitting material was 100 parts by weight.
- the surface tension of each ink was measured using an automatic surface tension meter (CBVP-Z type, manufactured by Kyowa Interface Science).
- the boiling point of xylene at 1 atm is 139 ° C.
- the boiling point of anisole is 155 ° C.
- the boiling point of CHB is 240 ° C.
- a flexographic printing plate made of polyester resin was used for the flexographic printing apparatus.
- the flexographic printing plate used has a plurality of convex portions provided in stripes at regular intervals, the width of the convex portion is 35 ⁇ m, the height of the convex portion is 100 ⁇ m, and the convex portions adjacent to each other. The interval between the parts was 188.5 ⁇ m.
- each ink was printed on a glass substrate and further dried to form a stripe-shaped organic layer on the glass substrate.
- the cross-sectional shape of the organic layer formed using the first ink of Example 1 of Table 1 is shown in FIG. 1, and the cross-sectional shape of the organic layer formed using the second ink of Example 2 of Table 1 is shown in FIG.
- the cross-sectional shape of the organic layer formed using the 3rd ink of the comparative example 1 of Table 1 is shown in FIG. 3, respectively.
- the cross-sectional shape was measured with an optical interference microscope (manufactured by Ryoka System, Micromap).
- the horizontal axis represents the width (distance) in a direction parallel to the surface of the glass substrate and perpendicular to the longitudinal direction of the organic layer
- the vertical axis represents the height in the direction perpendicular to the substrate.
- the width of the convex part of the relief plate is 35 ⁇ m
- the width of the formed organic layer is about 100 ⁇ m, which adheres to the relief plate when the relief plate is pressed against the glass substrate that is the printing object. This is because the width of the ink was pushed wide.
- an organic layer having a uniform film thickness with a substantially rectangular cross section is obtained by using a first solvent having a boiling point of 220 ° C. or higher and a surface tension of less than 34 mN / m.
- FIG. 3 when the organic layer was formed using an ink having a surface tension of 34 mN / m or more, an organic layer having a non-uniform cross-sectional dome shape was formed by the surface tension. .
Abstract
Description
[1]沸点が220℃以上の第1溶媒と、有機層の構成材料とを含み、かつ表面張力が34mN/m未満である、有機エレクトロルミネッセンス素子の前記有機層を印刷法により形成するためのインキ。
[2]前記インキ100重量部に対する前記第1溶媒の割合が5重量部以上40重量部未満である、[1]記載のインキ。
[3]沸点が150℃以上220℃未満の第2溶媒をさらに含む、[1]または[2]記載のインキ。
[4]前記インキ100重量部に対する前記2溶媒の割合が20重量部以上70重量部未満である、[3]記載のインキ。
[5]沸点が150℃未満の第3溶媒をさらに含む、[1]~[4]のいずれか1つに記載のインキ。
[6]沸点が150℃未満の第3溶媒をさらに含む、[3]に記載のインキ。
[7]前記インキ100重量部に対する前記第3溶媒の割合が20重量部以上70重量部未満である、[5]記載のインキ。
[8]沸点が220℃以上である第1溶媒と、有機材料とを含み、かつ表面張力が34mN/m未満であるインキを準備する工程と、印刷法により、前記インキを塗布して有機層を形成する工程とを含む、有機エレクトロルミネッセンス素子の製造方法。
[9]前記インキ100重量部に対する前記第1溶媒の割合が5重量部以上40重量部未満である、[8]記載の有機エレクトロルミネッセンス素子の製造方法。
[10]前記インキが、沸点が150℃以上220℃未満の第2溶媒をさらに含む、[8]記載の有機エレクトロルミネッセンス素子の製造方法。
[11]前記インキ100重量部に対する前記2溶媒の割合が20重量部以上70重量部未満である、[10]記載の有機エレクトロルミネッセンス素子の製造方法。
[12]前記インキが、沸点が150℃未満の第3溶媒をさらに含む、[8]記載の有機エレクトロルミネッセンス素子の製造方法。
[13]前記インキ100重量部に対する前記第3溶媒の割合が20重量部以上70重量部未満である、[12]記載の有機エレクトロルミネッセンス素子の製造方法。
[14][8]に記載の有機エレクトロルミネッセンス素子の製造方法を用いて製造された有機エレクトロルミネッセンス素子を備える表示装置。
が提供される。
a)陽極/発光層/陰極
b)陽極/正孔注入層/発光層/陰極
c)陽極/正孔注入層/発光層/電子注入層/陰極
d)陽極/正孔注入層/発光層/電子輸送層/陰極
e)陽極/正孔注入層/発光層/電子輸送層/電子注入層/陰極
f)陽極/正孔輸送層/発光層/陰極
g)陽極/正孔輸送層/発光層/電子注入層/陰極
h)陽極/正孔輸送層/発光層/電子輸送層/陰極
i)陽極/正孔輸送層/発光層/電子輸送層/電子注入層/陰極
j)陽極/正孔注入層/正孔輸送層/発光層/陰極
k)陽極/正孔注入層/正孔輸送層/発光層/電子注入層/陰極
l)陽極/正孔注入層/正孔輸送層/発光層/電子輸送層/陰極
m)陽極/正孔注入層/正孔輸送層/発光層/電子輸送層/電子注入層/陰極
n)陽極/発光層/電子注入層/陰極
o)陽極/発光層/電子輸送層/陰極
p)陽極/発光層/電子輸送層/電子注入層/陰極
(ここで、記号「/」は、記号「/」を挟む各層が隣接して積層されていることを示す。
以下同じ。)
本実施の形態の有機EL素子は、2層以上の発光層を有していてもよく、2層の発光層を有する有機EL素子としては、上記a)~p)の層構成のうちのいずれか1つにおいて、陽極と陰極とに挟持された積層体を「繰り返し単位A」とすると、以下のq)に示す層構成を挙げることができる。
q)陽極/(繰り返し単位A)/電荷発生層/(繰り返し単位A)/陰極
また、3層以上の発光層を有する有機EL素子としては、「(繰り返し単位A)/電荷発生層」を「繰り返し単位B」とすると、以下のr)に示す層構成を挙げることができる。
r)陽極/(繰り返し単位B)x/(繰り返し単位A)/陰極
なお記号「x」は、2以上の整数を表し、(繰り返し単位B)xは、繰り返し単位Bがx段積層された積層体を表す。
電荷発生層としては、例えば酸化バナジウム、インジウムスズ酸化物(Indium Tin Oxide:略称ITO)、酸化モリブデンなどから成る薄膜を挙げることができる。
基板は、有機EL素子を製造する工程において変化しないものが好適に用いられ、例えばガラス、プラスチック、高分子フィルム、およびシリコン基板、並びにこれらを積層したものなどが用いられる。前記基板は、市販の基板が使用可能であるか、または公知の方法により製造することができる。
陽極を通して発光層からの光を取出す構成の有機EL素子の場合、陽極には透明又は半透明の電極が用いられる。透明電極または半透明電極としては、電気伝導度の高い金属酸化物、金属硫化物および金属などの薄膜を用いることができ、光透過率の高いものが好適に用いられる。具体的には、酸化インジウム、酸化亜鉛、酸化スズ、ITO、インジウム亜鉛酸化物(Indium Zinc Oxide:略称IZO)、金、白金、銀、および銅などから成る薄膜が用いられ、これらの中でもITO、IZO、または酸化スズから成る薄膜が好適に用いられる。また、該陽極として、ポリアニリンもしくはその誘導体、ポリチオフェンもしくはその誘導体などの有機物の透明導電膜を用いてもよい。
正孔注入層の構成材料としては、酸化バナジウム、酸化モリブデン、酸化ルテニウム、および酸化アルミニウムなどの酸化物や、フェニルアミン系、スターバースト型アミン系、フタロシアニン系、アモルファスカーボン、ポリアニリン、およびポリチオフェン誘導体などの有機物を挙げることができる。
正孔輸送層の構成材料としては、ポリビニルカルバゾール若しくはその誘導体、ポリシラン若しくはその誘導体、側鎖若しくは主鎖に芳香族アミンを有するポリシロキサン誘導体、ピラゾリン誘導体、アリールアミン誘導体、スチルベン誘導体、トリフェニルジアミン誘導体、ポリアニリン若しくはその誘導体、ポリチオフェン若しくはその誘導体、ポリアリールアミン若しくはその誘導体、ポリピロール若しくはその誘導体、ポリ(p-フェニレンビニレン)若しくはその誘導体、又はポリ(2,5-チエニレンビニレン)若しくはその誘導体などの有機物を挙げることができる。
発光層は、通常、主として蛍光及び/又はりん光を発光する有機物、または該有機物とこれを補助するドーパントとから形成される。ドーパントは、例えば発光効率の向上や、発光波長を変化させるために加えられる。なお、有機物は、低分子化合物でも高分子化合物でもよく、発光層は、ポリスチレン換算の数平均分子量が、103~108である高分子化合物を含むことが好ましい。発光層の構成材料としては、例えば以下の色素系材料、金属錯体系材料、高分子系材料、ドーパント材料を挙げることができる。
(色素系材料)
色素系材料としては、例えば、シクロペンダミン誘導体、テトラフェニルブタジエン誘導体化合物、トリフェニルアミン誘導体、オキサジアゾール誘導体、ピラゾロキノリン誘導体、ジスチリルベンゼン誘導体、ジスチリルアリーレン誘導体、ピロール誘導体、チオフェン環化合物、ピリジン環化合物、ペリノン誘導体、ペリレン誘導体、オリゴチオフェン誘導体、オキサジアゾールダイマー、ピラゾリンダイマー、キナクリドン誘導体、クマリン誘導体などを挙げることができる。
(金属錯体系材料)
金属錯体系材料としては、例えば中心金属に、Al、Zn、Beなど、またはTb、Eu、Dyなどの希土類金属を有し、配位子にオキサジアゾール、チアジアゾール、フェニルピリジン、フェニルベンゾイミダゾール、キノリン構造などを有する金属錯体を挙げることができ、例えばイリジウム錯体、白金錯体などの三重項励起状態からの発光を有する金属錯体、アルミキノリノール錯体、ベンゾキノリノールベリリウム錯体、ベンゾオキサゾリル亜鉛錯体、ベンゾチアゾール亜鉛錯体、アゾメチル亜鉛錯体、ポルフィリン亜鉛錯体、ユーロピウム錯体などを挙げることができる。
(高分子系材料)
高分子系材料としては、ポリパラフェニレンビニレン誘導体、ポリチオフェン誘導体、ポリパラフェニレン誘導体、ポリシラン誘導体、ポリアセチレン誘導体、ポリフルオレン誘導体、ポリビニルカルバゾール誘導体、上記色素系材料や金属錯体系発光材料を高分子化したものなどを挙げることができる。
(ドーパント材料)
ドーパント材料としては、例えばペリレン誘導体、クマリン誘導体、ルブレン誘導体、キナクリドン誘導体、スクアリウム誘導体、ポルフィリン誘導体、スチリル系色素、テトラセン誘導体、ピラゾロン誘導体、デカシクレン、フェノキサゾンなどを挙げることができる。なお、このような発光層の厚さは、通常、約2nm~200nmである。
電子輸送層を構成する電子輸送材料としては、公知のものを使用でき、オキサジアゾール誘導体、アントラキノジメタン若しくはその誘導体、ベンゾキノン若しくはその誘導体、ナフトキノン若しくはその誘導体、アントラキノン若しくはその誘導体、テトラシアノアンスラキノジメタン若しくはその誘導体、フルオレノン誘導体、ジフェニルジシアノエチレン若しくはその誘導体、ジフェノキノン誘導体、又は8-ヒドロキシキノリン若しくはその誘導体の金属錯体、ポリキノリン若しくはその誘導体、ポリキノキサリン若しくはその誘導体、ポリフルオレン若しくはその誘導体などを挙げることができる。
電子注入層の構成材料としては、発光層の種類に応じて最適な材料が適宜選択され、アルカリ金属、アルカリ土類金属、アルカリ金属およびアルカリ土類金属のうちの1種類以上を含む合金、アルカリ金属若しくはアルカリ土類金属の酸化物、ハロゲン化物、炭酸化物、またはこれらの物質の混合物などを挙げることができる。アルカリ金属、アルカリ金属の酸化物、ハロゲン化物、および炭酸化物の例としては、リチウム、ナトリウム、カリウム、ルビジウム、セシウム、酸化リチウム、フッ化リチウム、酸化ナトリウム、フッ化ナトリウム、酸化カリウム、フッ化カリウム、酸化ルビジウム、フッ化ルビジウム、酸化セシウム、フッ化セシウム、炭酸リチウムなどを挙げることができる。また、アルカリ土類金属、アルカリ土類金属の酸化物、ハロゲン化物、炭酸化物の例としては、マグネシウム、カルシウム、バリウム、ストロンチウム、酸化マグネシウム、フッ化マグネシウム、酸化カルシウム、フッ化カルシウム、酸化バリウム、フッ化バリウム、酸化ストロンチウム、フッ化ストロンチウム、炭酸マグネシウムなどを挙げることができる。電子注入層は、2層以上を積層した積層体で構成されてもよく、例えばLiF/Caなどを挙げることができる。電子注入層の膜厚としては、1nm~1μm程度が好ましい。
陰極の材料としては、仕事関数が小さく、発光層への電子注入が容易で、電気伝導度の高い材料が好ましい。また陽極側から光を取出す有機EL素子では、発光層からの光を陰極で陽極側に反射するために、陰極の材料としては可視光反射率の高い材料が好ましい。
陰極には、例えばアルカリ金属、アルカリ土類金属、遷移金属および周期律表の第13族金属などを用いることができる。陰極の材料としては、例えばリチウム、ナトリウム、カリウム、ルビジウム、セシウム、ベリリウム、マグネシウム、カルシウム、ストロンチウム、バリウム、アルミニウム、スカンジウム、バナジウム、亜鉛、イットリウム、インジウム、セリウム、サマリウム、ユーロピウム、テルビウム、イッテルビウムなどの金属、前記金属のうちの2種以上の合金、前記金属のうちの1種以上と、金、銀、白金、銅、マンガン、チタン、コバルト、ニッケル、タングステン、錫のうちの1種以上との合金、またはグラファイト若しくはグラファイト層間化合物などが用いられる。合金の例としては、マグネシウム-銀合金、マグネシウム-インジウム合金、マグネシウム-アルミニウム合金、インジウム-銀合金、リチウム-アルミニウム合金、リチウム-マグネシウム合金、リチウム-インジウム合金、カルシウム-アルミニウム合金などを挙げることができる。また、陰極としては導電性金属酸化物および導電性有機物などから成る透明導電性電極を用いることができる。具体的には、導電性金属酸化物として酸化インジウム、酸化亜鉛、酸化スズ、ITO、およびIZOを挙げることができ、導電性有機物としてポリアニリンもしくはその誘導体、ポリチオフェンもしくはその誘導体などを挙げることができる。なお、陰極は、2層以上を積層した積層体で構成されていてもよい。なお、電子注入層が陰極として用いられる場合もある。
有機EL素子は、前述した有機EL素子の構成要素を順次積層することによって形成することができる。
Claims (14)
- 沸点が220℃以上の第1溶媒と、有機層の構成材料とを含み、かつ表面張力が34mN/m未満である、有機エレクトロルミネッセンス素子の前記有機層を印刷法により形成するためのインキ。
- 前記インキ100重量部に対する前記第1溶媒の割合が5重量部以上40重量部未満である、請求項1記載のインキ。
- 沸点が150℃以上220℃未満の第2溶媒をさらに含む、請求項1記載のインキ。
- 前記インキ100重量部に対する前記2溶媒の割合が20重量部以上70重量部未満である、請求項3記載のインキ。
- 沸点が150℃未満の第3溶媒をさらに含む、請求項1記載のインキ。
- 沸点が150℃未満の第3溶媒をさらに含む、請求項3記載のインキ。
- 前記インキ100重量部に対する前記第3溶媒の割合が20重量部以上70重量部未満である、請求項5記載のインキ。
- 沸点が220℃以上である第1溶媒と、有機材料とを含み、かつ表面張力が34mN/m未満であるインキを準備する工程と、
印刷法により、前記インキを塗布して有機層を形成する工程と
を含む、有機エレクトロルミネッセンス素子の製造方法。 - 前記インキ100重量部に対する前記第1溶媒の割合が5重量部以上40重量部未満である、請求項8記載の有機エレクトロルミネッセンス素子の製造方法。
- 前記インキが、沸点が150℃以上220℃未満の第2溶媒をさらに含む、請求項8記載の有機エレクトロルミネッセンス素子の製造方法。
- 前記インキ100重量部に対する前記2溶媒の割合が20重量部以上70重量部未満である、請求項10記載の有機エレクトロルミネッセンス素子の製造方法。
- 前記インキが、沸点が150℃未満の第3溶媒をさらに含む、請求項8記載の有機エレクトロルミネッセンス素子の製造方法。
- 前記インキ100重量部に対する前記第3溶媒の割合が20重量部以上70重量部未満である、請求項12記載の有機エレクトロルミネッセンス素子の製造方法。
- 請求項8に記載の有機エレクトロルミネッセンス素子の製造方法を用いて製造された有機エレクトロルミネッセンス素子を備える表示装置。
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CN2009801355319A CN102150475A (zh) | 2008-09-12 | 2009-09-02 | 有机电致发光元件制造用的墨液、有机电致发光元件的制造方法以及显示装置 |
EP09813028A EP2334150A4 (en) | 2008-09-12 | 2009-09-02 | INK FOR MANUFACTURING ORGANIC ELECTROLUMINESCENCE ELEMENT, METHOD FOR MANUFACTURING ORGANIC ELECTROLUMINESCENCE ELEMENT, AND DISPLAY DEVICE |
US13/062,602 US20110177304A1 (en) | 2008-09-12 | 2009-09-02 | Ink for manufacturing organic electroluminescent element, method for manufacturing organic electroluminescent element, and display device |
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JP2008234471A JP2010067543A (ja) | 2008-09-12 | 2008-09-12 | 印刷用のインキ |
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US (1) | US20110177304A1 (ja) |
EP (1) | EP2334150A4 (ja) |
JP (1) | JP2010067543A (ja) |
KR (1) | KR20110056383A (ja) |
CN (1) | CN102150475A (ja) |
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Cited By (1)
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EP2590481A4 (en) * | 2010-07-01 | 2017-12-20 | Joled Inc. | Ink for organic light emitting element, method for manufacturing organic light emitting element, organic display panel, organic display device, organic light emitting device, ink, method for forming functional layer, and organic light emitting element |
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JP2011204524A (ja) * | 2010-03-26 | 2011-10-13 | Sumitomo Chemical Co Ltd | 発光装置の製造方法 |
JP6015073B2 (ja) * | 2012-04-02 | 2016-10-26 | セイコーエプソン株式会社 | 機能層形成用インク、発光素子の製造方法 |
WO2015023302A1 (en) | 2013-08-12 | 2015-02-19 | Kateeva, Inc. | Ester-based solvent systems for printable organic light-emitting diode ink formulations |
KR20180044286A (ko) * | 2015-08-24 | 2018-05-02 | 디아이씨 가부시끼가이샤 | 유기 반도체 소자용 잉크 조성물 및 이것을 사용한 유기 반도체 소자 |
CN105244454B (zh) * | 2015-10-16 | 2018-04-06 | Tcl集团股份有限公司 | 一种印刷am‑qdled及其制作方法 |
JP6897021B2 (ja) * | 2016-07-26 | 2021-06-30 | セイコーエプソン株式会社 | インク組成物、有機半導体素子の製造方法、有機半導体装置、および光学素子の製造方法 |
TW202034551A (zh) * | 2018-11-06 | 2020-09-16 | 德商麥克專利有限公司 | 用於形成電子裝置的有機元件之方法 |
KR20200098766A (ko) * | 2019-02-11 | 2020-08-21 | 삼성디스플레이 주식회사 | 발광 소자 용매, 이를 포함하는 발광 소자 잉크 및 표시 장치의 제조 방법 |
EP3944324A4 (en) * | 2019-03-18 | 2022-11-23 | Samsung Display Co., Ltd. | ELECTROLUMINESCENT ELEMENT SOLVENT, PHOTODEGRADABLE THICKENER, ELECTROLUMINESCENT ELEMENT INK AND METHOD OF MAKING DISPLAY DEVICE |
CN111509144B (zh) * | 2020-04-24 | 2022-09-30 | 合肥京东方卓印科技有限公司 | Oled器件的制备方法及显示面板的制备方法 |
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US20110177304A1 (en) | 2011-07-21 |
EP2334150A1 (en) | 2011-06-15 |
CN102150475A (zh) | 2011-08-10 |
TW201021264A (en) | 2010-06-01 |
KR20110056383A (ko) | 2011-05-27 |
JP2010067543A (ja) | 2010-03-25 |
EP2334150A4 (en) | 2012-08-01 |
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