WO2009136770A3 - 발광 소자 및 그 제조방법 - Google Patents

발광 소자 및 그 제조방법 Download PDF

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Publication number
WO2009136770A3
WO2009136770A3 PCT/KR2009/002448 KR2009002448W WO2009136770A3 WO 2009136770 A3 WO2009136770 A3 WO 2009136770A3 KR 2009002448 W KR2009002448 W KR 2009002448W WO 2009136770 A3 WO2009136770 A3 WO 2009136770A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
emitting element
electrically conductive
production method
conductive semiconductor
Prior art date
Application number
PCT/KR2009/002448
Other languages
English (en)
French (fr)
Other versions
WO2009136770A2 (ko
Inventor
강대성
Original Assignee
엘지이노텍주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍주식회사 filed Critical 엘지이노텍주식회사
Priority to EP09742876.7A priority Critical patent/EP2276078B1/en
Priority to CN2009801009621A priority patent/CN101855737B/zh
Priority to US12/678,103 priority patent/US20120104434A1/en
Publication of WO2009136770A2 publication Critical patent/WO2009136770A2/ko
Publication of WO2009136770A3 publication Critical patent/WO2009136770A3/ko
Priority to US13/721,772 priority patent/US8791479B2/en
Priority to US14/313,757 priority patent/US9368684B2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Abstract

실시예에 따른 발광 소자는 제1 도전형의 반도체층; 상기 제1 도전형의 반도체층 상에 활성층; 상기 활성층 상에 제2 도전형의 반도체층; 및 상기 제2 도전형의 반도체층 상에 상기 제2 도전형의 반도체층보다 굴절률이 작거나 같은 광 추출층을 포함한다.
PCT/KR2009/002448 2008-05-08 2009-05-08 발광 소자 및 그 제조방법 WO2009136770A2 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP09742876.7A EP2276078B1 (en) 2008-05-08 2009-05-08 Light-emitting element
CN2009801009621A CN101855737B (zh) 2008-05-08 2009-05-08 发光器件及其制造方法
US12/678,103 US20120104434A1 (en) 2008-05-08 2009-05-08 Light emitting device and method for manufacturing the same
US13/721,772 US8791479B2 (en) 2008-05-08 2012-12-20 Light emitting device and method for manufacturing the same
US14/313,757 US9368684B2 (en) 2008-05-08 2014-06-24 Light emitting device and method for manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0042973 2008-05-08
KR1020080042973A KR100969128B1 (ko) 2008-05-08 2008-05-08 발광 소자 및 그 제조방법

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/678,103 A-371-Of-International US20120104434A1 (en) 2008-05-08 2009-05-08 Light emitting device and method for manufacturing the same
US13/721,772 Continuation US8791479B2 (en) 2008-05-08 2012-12-20 Light emitting device and method for manufacturing the same

Publications (2)

Publication Number Publication Date
WO2009136770A2 WO2009136770A2 (ko) 2009-11-12
WO2009136770A3 true WO2009136770A3 (ko) 2010-03-11

Family

ID=41265186

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/002448 WO2009136770A2 (ko) 2008-05-08 2009-05-08 발광 소자 및 그 제조방법

Country Status (5)

Country Link
US (3) US20120104434A1 (ko)
EP (1) EP2276078B1 (ko)
KR (1) KR100969128B1 (ko)
CN (1) CN101855737B (ko)
WO (1) WO2009136770A2 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100969128B1 (ko) * 2008-05-08 2010-07-09 엘지이노텍 주식회사 발광 소자 및 그 제조방법
CN101853912A (zh) * 2010-04-08 2010-10-06 苏州大学 一种增强偏振出光发光二极管
CN102122686A (zh) * 2011-01-17 2011-07-13 泉州市金太阳电子科技有限公司 发光二极管的制造方法
JP6434878B2 (ja) * 2015-09-10 2018-12-05 株式会社東芝 発光装置

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JP2007096116A (ja) * 2005-09-29 2007-04-12 Toyoda Gosei Co Ltd 発光素子
KR20070088006A (ko) * 2006-02-24 2007-08-29 서울옵토디바이스주식회사 광추출을 위한 나노구조체들을 갖는 발광 다이오드 및그것을 제조하는 방법
KR20080000884A (ko) * 2006-06-28 2008-01-03 삼성전기주식회사 질화갈륨계 발광 다이오드 소자 및 그 제조방법

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US6020602A (en) * 1996-09-10 2000-02-01 Kabushiki Kaisha Toshba GaN based optoelectronic device and method for manufacturing the same
US6091085A (en) * 1998-02-19 2000-07-18 Agilent Technologies, Inc. GaN LEDs with improved output coupling efficiency
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JP5347236B2 (ja) * 2007-05-08 2013-11-20 三菱電機株式会社 半導体光素子の製造方法
KR100969128B1 (ko) * 2008-05-08 2010-07-09 엘지이노텍 주식회사 발광 소자 및 그 제조방법

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Publication number Priority date Publication date Assignee Title
KR20060121422A (ko) * 2005-05-24 2006-11-29 엘지전자 주식회사 광 추출용 나노 로드를 갖는 발광 소자 및 그의 제조방법
JP2007096116A (ja) * 2005-09-29 2007-04-12 Toyoda Gosei Co Ltd 発光素子
KR20070088006A (ko) * 2006-02-24 2007-08-29 서울옵토디바이스주식회사 광추출을 위한 나노구조체들을 갖는 발광 다이오드 및그것을 제조하는 방법
KR20080000884A (ko) * 2006-06-28 2008-01-03 삼성전기주식회사 질화갈륨계 발광 다이오드 소자 및 그 제조방법

Also Published As

Publication number Publication date
KR20090117083A (ko) 2009-11-12
EP2276078A4 (en) 2014-12-17
US9368684B2 (en) 2016-06-14
WO2009136770A2 (ko) 2009-11-12
CN101855737A (zh) 2010-10-06
EP2276078A2 (en) 2011-01-19
US20120104434A1 (en) 2012-05-03
CN101855737B (zh) 2012-06-20
US20140306177A1 (en) 2014-10-16
EP2276078B1 (en) 2019-01-02
KR100969128B1 (ko) 2010-07-09
US20130193442A1 (en) 2013-08-01
US8791479B2 (en) 2014-07-29

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