Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
  • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
  • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
  • H01L23/53204—Conductive materials
  • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
  • H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
  • H01L23/53261—Refractory-metal alloys
• • C—CHEMISTRY; METALLURGY
  • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
  • C22C—ALLOYS
  • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
  • C22C27/04—Alloys based on tungsten or molybdenum
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/14—Metallic material, boron or silicon
  • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
  • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
  • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
  • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/0001—Technical content checked by a classifier
  • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
  • H01L2924/097—Glass-ceramics, e.g. devitrified glass
  • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Definitions

• the present invention relates to a flat display device such as a liquid crystal display or an organic EL display, a thin film wiring for an electronic component used for an electric wiring / electrode of an electronic component such as a thin film sensor, and a sputtering target material for forming a thin film wiring.
• TFT liquid crystal displays that produce thin film devices on substrates such as glass
• electrical wiring films and electrodes that are used to form elements on thin film sensors and ceramic substrates
• corrosion resistance, heat resistance, and adhesion to the substrate have been used.
• a pure metal film such as a pure Cr film, a pure Ta film, a pure Ti film or the like, which is excellent in high melting point metal, or an alloy film thereof is used.
• the present applicant has also proposed a Mo alloy film in which 3 to 50 atomic% of Nb is added to Mo as a low resistance Mo alloy film excellent in corrosion resistance, heat resistance and adhesion to a substrate (for example, Patent Documents). 1). JP 2002-190212 A
• An object of the present invention is to provide a novel thin film wiring and thin film for an electronic component of an Mo alloy that has low resistance, heat resistance, corrosion resistance, and excellent adhesion to the substrate even when the film is formed on a large substrate. It is to provide a sputtering target material for forming a wiring.
• the present inventor has found that a tensile stress is easily applied to the sputtering film of the MoNb alloy, and an appropriate amount of W is effective for the relaxation of the tensile stress.
• the present invention has been found.
• the additive element in a thin film wiring in which a metal film is formed on a substrate, when the total amount of Mo and an additive element is 100 atomic%, the additive element contains Nb of 2 to 15 atomic% and W as the additive element.
• the present invention when the total amount of Mo and additive elements is 100 atomic%, contains 2 to 15 atomic% of Nb, 2 to 20 atomic% of W, and 30 atomic% or less of Nb + W as the additional elements, and the balance It is a sputtering target material for forming a thin film wiring composed of Mo and inevitable impurities.
• the Mo alloy film of the present invention By selecting the Mo alloy film of the present invention, low resistance, excellent heat resistance, corrosion resistance and adhesion to the substrate, and it is possible to suppress the occurrence of warping to a large substrate. As an indispensable technology.
• An important feature of the present invention is that by adding appropriate amounts of Nb and W to Mo, low resistance, excellent heat resistance, corrosion resistance, and adhesion to the substrate, and tensile stress when sputtering film formation is performed. It is in the point that it becomes possible to reduce the warpage and suppress the occurrence of warping of the substrate on which the Mo alloy thin film is formed.
• Nb is contained as an additive element in an amount of 2 to 15 atomic%, W is 2 to 20 atomic%, and Nb + W is 30 atomic% or less.
• the reason why Nb is contained as an additive element in the present invention is that it has an effect of improving corrosion resistance by alloying with Mo. This effect of improving the corrosion resistance appears from 2 atomic%, and the corrosion resistance improves with an increase in the amount added, but excessive addition is not desirable because the specific resistance increases.
• the upper limit of the addition amount is preferably 15 atomic%. More preferably, it is 10 atomic% or less.
• Mo is an element that has practically low resistance and adhesion, but is inferior in corrosion resistance, and is easily subjected to tensile stress when formed on a large substrate by sputtering. Even if only Nb is added to Mo, there is little effect on the relaxation of the tensile stress applied to the sputtered film of Mo. Therefore, W is added to relieve the tensile stress. The effect of relieving the tensile stress of the MoNb alloy film becomes clear by adding W at 2 atomic% or more. The relaxation of the tensile stress becomes remarkable as the film stress changes from the tension side to the compression side as the amount of W added increases, but when the amount of W exceeds 20 atomic%, the compressive stress increases and the adhesion decreases. Therefore, it is desirable to make it 20 atomic% or less.
• the thin film wiring for electronic parts of the present invention preferably has a low specific resistance. Therefore, the total amount of Nb and W added is set to 30 atomic% or less. An increase in the specific resistance in the wiring causes a signal delay of the thin film device and causes a decrease in performance. Therefore, it is desirable that the specific resistance is as low as possible. A practical specific resistance is desirably 30 ⁇ cm or less. In the case of the Mo alloy thin film of the present invention in which the specific resistance is increased by adding Nb and W to alloy with Mo, optimization of the addition amount of Nb and W is the most effective in reducing the specific resistance. It is important, and in order to stably realize a thin film wiring of 30 ⁇ cm or less, it is more preferable that the total amount of Nb and W added is 20 atomic% or less.
• Mo is an element that has practically both adhesion and low resistance, and therefore is an essential element and is a base element that occupies the remainder other than Nb and W described above. Therefore, it is desired that the balance has as little unavoidable impurity content as possible, but oxygen, nitrogen and carbon, which are gas components, and Fe, Cu, which are transition metals, and semimetals, as long as the effects of the present invention are not impaired. Inevitable impurities such as Al and Si may be included.
• oxygen and nitrogen of the gas components are each 1000 ppm by mass or less, carbon is 200 ppm by mass or less, Fe and Cu are 200 ppm by mass or less, Al and Si are 100 ppm by mass or less, and the purity excluding the gas components It may be 99.9% or more.
• the resistance of the conventional MoNb alloy is ensured while maintaining the same or better characteristics as the conventional MoNb alloy having low resistance, excellent heat resistance, corrosion resistance, and adhesion to the substrate.
• the problem of tensile stress can be alleviated. For this reason, it has the effect that it becomes possible to suppress generation
• the film thickness is preferably 100 to 400 nm in order to obtain a stable electric resistance.
• the film thickness is less than 100 nm, since the film is thin, the electrical resistance increases due to the influence of electron surface scattering, and the surface form of the film easily changes.
• the film thickness exceeds 400 nm, it is possible to reduce the specific resistance, but it takes time to form the film and the productivity is lowered.
• sputtering using a target material is optimal.
• a method of forming a film using a Mo alloy target material having the same composition as the thin film wiring a method of forming a film by cosputtering using a MoNb alloy target material and a MoW alloy target material, and the like can be applied. From the viewpoint of easy setting of sputtering conditions and easy production of a wiring thin film having a desired composition, it is desirable to perform sputtering film formation using the same Mo alloy target material as the composition of the thin film wiring.
• the film formation conditions during sputtering are an Ar gas pressure of 0.5 Pa or less, a power density of 5 W / cm 2 or more, and a substrate heating temperature of 150 ° C. or more. .
• Mo-10Nb (atomic%) and Mo-35W (atomic%) targets were prepared, and an Mo alloy thin film was formed using a sputtering apparatus of Anelva SPF440.
• the sputtering conditions were such that the Ar pressure was 0.3 Pa, the total input power was fixed at 700 W, and the Mo—Nb—W thin film and the Mo—Nb thin film having different compositions shown in Table 1 were formed on a Si wafer having a diameter of 101.6 mm. A film having a thickness of 200 nm was formed thereon.
• the substrate was rotated so that the film thickness became uniform. Subsequently, the film stress of the formed Mo alloy thin film was measured using a thin film stress measuring instrument FLX2320 (KLA-tencor).
• Samples 2 and 3 of the present invention can realize a thin film having a low resistance of 30 ⁇ cm or less at the time of film formation and have sufficient corrosion resistance without an increase in specific resistance even after the corrosion resistance test.
• the Mo—Nb target and the Mo—Nb—W target shown in Table 2 were prepared, and the sputtering conditions were as follows: Ar pressure: 0.25 Pa; input power: 500 W; A Mo alloy film was formed.
• Table 2 shows the results of measuring the film stress of the Mo alloy thin film after film formation in the same manner as in Example 1. Further, for the formed Mo alloy thin film, in the same manner as in Example 1, the specific resistance at the time of film formation and the specific resistance after the corrosion resistance test immersed in pure water for 5 days were measured by the 4-probe method. The measurement results are shown in Table 2.
• the Mo target, Mo—Nb target, and Mo—Nb—W target shown in Table 3 were prepared, the sputtering conditions were Ar pressure of 0.3 Pa, the input power was 700 W, and the thickness was on a Si wafer having a diameter of 101.6 mm. Mo film and Mo alloy film were formed at 400 nm.
• the results of measuring the film stress in the same manner as in Example 1 are shown in Table 3. Further, the Mo alloy thin film formed as described above was held for 200 hours in an environment of a specific resistance at the time of film formation and a specific resistance after a corrosion resistance test immersed in pure water for 5 days at a temperature of 85 ° C. and a relative humidity of 85%. The specific resistance after the high temperature and high humidity test was measured by a four-probe method. Table 4 shows the measurement results.
• the Mo—Nb—W alloy film of the present invention has a small difference between the target composition and the film composition and can reduce the tensile stress as compared with the Mo film and the Mo—Nb alloy film. Further, it can be seen that the film characteristics have a higher corrosion resistance than Mo as in the case of the Mo—Nb alloy, so that the resistance value changes little after the corrosion resistance test and after the high temperature and high humidity test.

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• 2009
  • 2009-03-27 KR KR1020107024041A patent/KR101250191B1/ko active IP Right Grant
  • 2009-03-27 JP JP2010505834A patent/JP5327651B2/ja active Active
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