TW200622017A - Wiring/electrode and sputtering target - Google Patents

Wiring/electrode and sputtering target

Info

Publication number
TW200622017A
TW200622017A TW094141327A TW94141327A TW200622017A TW 200622017 A TW200622017 A TW 200622017A TW 094141327 A TW094141327 A TW 094141327A TW 94141327 A TW94141327 A TW 94141327A TW 200622017 A TW200622017 A TW 200622017A
Authority
TW
Taiwan
Prior art keywords
wiring
electrode
thin film
sputtering target
oxygen
Prior art date
Application number
TW094141327A
Other languages
Chinese (zh)
Inventor
Shunsuke Yatsunami
Toshio Inase
Takahiro Kawabata
Original Assignee
Tosoh Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tosoh Corp filed Critical Tosoh Corp
Publication of TW200622017A publication Critical patent/TW200622017A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Wiring /electrode being low in resisitivity and suitable for higher density of an electronic device, especially for making larger and finer a display element such as a liquid crystal display, and a sputtering target being high in discharge stability and used for the production thereof. Wiring/electrode is formed by an Al-based alloy thin film containing in Al less than 0.5 at. % in total of at least one kind of metal selected from a group III in the periodic table and containing up to 100pm of oxygen. Accordingly, wiring/electrode is obtained which has electric resistivity as low as that of a pure Al thin film produced under the same conditions and is high in hillock resistance. Wiring/electrode further lower in resistivity and higher in hillock resistance is obtained by improving the orientation of (111) plane oriented in parallel to a substrate surface. Such wiring/electrode is obtained by forming a thin film by a sputtering method that uses a sputtering target consisting of Al-based alloy containing less than 0.5 at. % in total of at least one kind of metal selected from a group III in the periodic table and containing up to 100ppm of oxygen, and then heat-treating it at temperature of at least 150 DEG C.
TW094141327A 2004-11-24 2005-11-24 Wiring/electrode and sputtering target TW200622017A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004339095 2004-11-24

Publications (1)

Publication Number Publication Date
TW200622017A true TW200622017A (en) 2006-07-01

Family

ID=36498048

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094141327A TW200622017A (en) 2004-11-24 2005-11-24 Wiring/electrode and sputtering target

Country Status (2)

Country Link
TW (1) TW200622017A (en)
WO (1) WO2006057312A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113373414B (en) * 2020-02-25 2023-10-27 湖南东方钪业股份有限公司 Preparation method and application of aluminum scandium alloy sputtering target

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100312548B1 (en) * 1995-10-12 2001-12-28 니시무로 타이죠 Sputter target for wiring film, wiring film formation and electronic components using the same
JP2001073124A (en) * 1999-09-06 2001-03-21 Honeywell Electronics Japan Kk Sputtering target
JP3634208B2 (en) * 1999-09-21 2005-03-30 真空冶金株式会社 Electrode / wiring material for liquid crystal display and sputtering target

Also Published As

Publication number Publication date
WO2006057312A1 (en) 2006-06-01

Similar Documents

Publication Publication Date Title
JP6016083B2 (en) Laminated wiring film for electronic parts and sputtering target material for coating layer formation
JP5958822B2 (en) Method for producing Mo alloy sputtering target material and Mo alloy sputtering target material
WO2006132413A1 (en) Silver alloy for electrode, wiring and electromagnetic shielding
KR101613001B1 (en) METHOD OF MANUFACTURING Mo ALLOY SPUTTERING TARGET MATERIAL AND Mo ALLOY SPUTTERING TARGET MATERIAL
TWI583801B (en) A sputtering target for forming a wiring film for an electronic component and a coating layer material
KR20190010701A (en) Laminate wiring layer for an electronic component and a sputtering target material for forming a coating layer
KR20210029744A (en) Copper alloy sputtering target and manufacturing method of copper alloy sputtering target
KR101600169B1 (en) METAL THIN FILM FOR ELECTRONIC COMPONENT AND Mo ALLOY SPUTTERING TARGET MATERIAL FOR FORMING METAL THIN FILM
JPWO2006132412A1 (en) Silver alloy for electrode, wiring and electromagnetic shielding
CN105986233B (en) Wiring membrane and coating formation sputtering target material is laminated in electronic component-use
TW200622017A (en) Wiring/electrode and sputtering target
CN102953036B (en) Layered interconnection for electronic device, and sputtering target for forming covering layer
JP6380837B2 (en) Sputtering target material for forming coating layer and method for producing the same
KR101597018B1 (en) METAL THIN FILM AND Mo ALLOY SPUTTERING TARGET MATERIAL FOR FORMING METAL THIN FILM
JP2009168937A (en) Copper thin film with superior adhesiveness, and wiring and electrode for liquid crystal display comprising the copper thin film
JPWO2006132411A1 (en) Silver alloy for electrode, wiring and electromagnetic shielding
JP2013038393A (en) Multilayer wiring film for electronic component
JP2005091543A (en) Thin film wiring layer
JP5327651B2 (en) Thin film wiring for electronic parts and sputtering target material for forming thin film wiring
CN103227195B (en) The stacked wiring membrane of electronic component-use
JP2005093571A (en) Thin film wiring layer
JP2004204254A (en) Ag ALLOY FILM, FLAT PANEL DISPLAY DEVICE, AND SPUTTERING TARGET MATERIAL FOR Ag ALLOY FILM DEPOSITION
JP2004238648A (en) Ag-ALLOY FILM FOR ELECTRONIC PART, FLAT PANEL DISPLAY DEVICE, AND SPUTTERING TARGET MATERIAL FOR DEPOSITING Ag-ALLOY FILM FOR ELECTRONIC PART
JP2009167494A (en) Copper alloy thin film with excellent adhesion, and wire and electrode for liquid crystal display composed of the copper alloy thin film and used for liquid crystal display