WO2009119175A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- WO2009119175A1 WO2009119175A1 PCT/JP2009/052377 JP2009052377W WO2009119175A1 WO 2009119175 A1 WO2009119175 A1 WO 2009119175A1 JP 2009052377 W JP2009052377 W JP 2009052377W WO 2009119175 A1 WO2009119175 A1 WO 2009119175A1
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- WIPO (PCT)
- Prior art keywords
- heat
- semiconductor
- semiconductor device
- thermoelectric conversion
- seebeck
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 101
- 238000006243 chemical reaction Methods 0.000 claims abstract description 23
- 230000017525 heat dissipation Effects 0.000 claims abstract description 20
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 5
- 230000020169 heat generation Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 abstract 4
- 239000010410 layer Substances 0.000 description 30
- 238000005468 ion implantation Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 9
- 238000002955 isolation Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 238000005338 heat storage Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a semiconductor device.
- Patent Document 1 discloses a technique for thermally bonding a Peltier element to an IGBT for heat dissipation of an insulated gate bipolar transistor (IGBT).
- Patent Document 2 discloses a technique of embedding a Peltier element in an IGBT element in order to actively dissipate the power element from the inside.
- the amount of heat generation or the amount of heat storage and the in-plane distribution change greatly with time according to the operating state.
- An object of the present invention is to provide a semiconductor device that can actively dissipate heat corresponding to its operation.
- the semiconductor device of the present invention is a semiconductor device having one or more semiconductor elements, wherein one end is disposed at a position close to the heat generating portion of the semiconductor element and the other end is disposed on the distal side of the heat generating portion.
- the thermoelectric conversion element is provided inside the semiconductor element in a state and generates a thermoelectromotive force according to a temperature difference between the one end and the other end, and one end is disposed at a position close to the heat generating portion.
- the other end is provided inside the semiconductor element in a state of being disposed on the distal side of the heat generating part, and the current according to the thermoelectromotive force generated in the thermoelectric conversion element is applied to the semiconductor element.
- a heat dissipating element that moves heat from one end side to the other end side.
- the present invention it is possible to actively dissipate heat from the heat generating portion according to the temperature at a position close to the heat generating portion of the semiconductor element. As a result, it is possible to provide a semiconductor device in which element operation is stabilized by actively performing heat dissipation corresponding to the operation.
- FIG. 4 (a) shows a Seebeck element
- FIG.4 (b) shows a Peltier element.
- SYMBOLS 20 Semiconductor element part, 31 ... Seebeck element (thermoelectric conversion element), 32 ... Peltier element (heat dissipation element), 200 ... Semiconductor element part, 201 ... Silicon substrate, 202 ... High concentration n-type subcollector layer, 203 ... n-type Collector layer, 204 ... selective ion implantation collector, 205 ... n-type collector layer, 206 ... p-type base layer, 207 ... n-type emitter layer, 208, 209 ... element isolation layer, 210, 211 ... interlayer insulating layer, 212 ... DTI (deep trench isolation), 213... Silicon oxide film, 300... Thermal countermeasure, 310...
- Seebeck element 311... N-type semiconductor, 312... P-type semiconductor, 313.
- Circuit, 400... Thermal response means 410. Seebeck element, 411... N-type semiconductor, 412... P-type semiconductor, 413.
- FIG. 1 is a diagram showing a configuration of a first embodiment according to a semiconductor device of the present invention.
- a bipolar transistor is described as an example of the semiconductor device.
- the present invention is not limited to this.
- CMOS Complementary Metal Oxide Semiconductor
- SiLDMOS Silicon Laterally Diffused MOS
- compound FET Field Effect Transistor
- the present invention can be applied to SiBT (Silicon Bipolar Transistor), SiGe HBT (Silicon Germanium Heterojunction Bipolar Transistor), compound HBT, IGBT, and the like.
- the semiconductor device (bipolar transistor) 100 corresponds to a semiconductor element portion 200 that functions as a semiconductor element, and heat that is contained in the semiconductor element portion and is generated in accordance with the operation of the semiconductor element portion.
- the heat response means 300 is provided.
- the semiconductor element unit 200 includes a silicon substrate 201, a high concentration n-type subcollector layer 202, an n-type collector layer 203, a selective ion implantation collector 204, and an n-type collector.
- a layer 205, a p-type base layer 206, an n-type emitter layer 207, element isolation layers 208 and 209, and interlayer insulating layers 210 and 211 are provided, which is a so-called NPN transistor structure.
- the SIC (selective ion implantation collector) 204 and the n-type collector layer 205 generate the most heat during operation.
- the heat handling means 300 includes a Seebeck element 310 as a thermoelectric conversion element, a Peltier element 320 as a heat dissipation element, and an amplifier circuit 330 that applies a current to the Peltier element 320 in accordance with a current value from the Seebeck element 310. .
- FIG. 2 is an enlarged sectional view of the Seebeck element 310
- FIG. 3 is an enlarged sectional view of the Peltier element 320.
- the Seebeck element 310 and the Peltier element 320 are embedded in an element isolation layer (STI; Shallow Trench Isolation) 208 adjacent to the n-type collector layer 203.
- STI Shallow Trench Isolation
- the Seebeck element 310 and the Peltier element 320 have basically the same configuration, and have an n-type semiconductor 311 and a p-type semiconductor 312 connected in series, and the same number of n-type semiconductors 311 and p-type semiconductors 312 are alternately arranged. Are stacked. Then, one end and the other end are alternately opened so that the junction is formed only at one end and the other end while maintaining electrical series, and the interlayer insulating film 313 is formed with the n-type semiconductor 311 and the p-type semiconductor 312. Between the layers.
- Such Seebeck element 310 and Peltier element 320 can be formed by CVD (Chemical Vavor Deposition).
- n-type semiconductor and the p-type semiconductor examples include SiGe or Bi 2 Te 3 .
- SiGe When SiGe is used as a material, it has a high affinity with the silicon process, and a semiconductor device in which Seebeck elements and Peltier elements are embedded can be made into one chip.
- Seebeck device 310 is embedded in device isolation layer (STI) 208, with one end proximal to selective ion implantation collector 204 and n-type collector layer 205 and the other end to selective ion implantation collector 204 and The n-type collector layer 205 is disposed distally. And it is preferable that the other end side is a fixed temperature. The other end side may be made constant by being distal from the heat source, or may be cooled to be constant temperature by a radiating fin or a refrigerant.
- STI device isolation layer
- electrodes are formed at respective ends corresponding to the beginning and the end of the connection between the n-type semiconductor 311 and the p-type semiconductor 312, and are connected to the amplifier circuit 330.
- FIG. 2 the symbol of resistance is also shown in order to show the generation of the thermoelectromotive force in an easy-to-understand manner.
- a Peltier element 320 is embedded in an element isolation layer (STI) 208, with one end proximal to the selective ion implantation collector 204 and the n-type collector layer 205 and the other end selective ion implantation collector 204. And disposed in a state distant from the n-type collector layer 205.
- STI element isolation layer
- electrodes are formed at respective ends corresponding to the beginning and the end of the connection between the n-type semiconductor 311 and the p-type semiconductor 312 and connected to the amplifier circuit 330.
- the DC power source in the amplifier circuit is connected to the Peltier element 320 so that a current flows in the np direction on one end side and a current flows in the pn direction on the other end side.
- the semiconductor element unit 200 operates in response to a predetermined signal. Then, heat is generated in the selective ion implantation collector 204 and the n-type collector layer 205. The generated heat is instantaneously transferred to one end of the adjacent Seebeck element 310. In this way, heat is transferred to one end of the Seebeck element 310 so that one end side becomes high temperature, while the other end side is kept at a constant temperature. Then, a thermoelectromotive force is generated in which current flows in the np direction (direction from the n-type semiconductor to the p-type semiconductor) at one end of the Seebeck element 310 and current flows in the pn direction at the other end. The current i due to the thermoelectromotive force generated in this way is input to the amplifier circuit 330.
- the amplifier circuit 330 amplifies the current i caused by the thermoelectromotive force and applies the current I to the Peltier element 320. Then, heat absorption occurs at one end side of the Peltier element 320 and heat dissipation occurs at the other end side.
- One end side of the Peltier element 320 is proximal to the selective ion implantation collector 204 and the n-type collector layer 205, which are heat generating portions, and heat from the heat generating portions is instantaneously absorbed, and the temperature of the heat generating portions is lowered. .
- the Seebeck element 310 is embedded with one end thereof being proximal to the heat generating part in the semiconductor element part. Since one end of the Seebeck element is very close to the heat generating part in this way, if the temperature rises even slightly in the heat generating part of the semiconductor element part, a temperature difference occurs between one end and the other end of the Seebeck element. As a result, a thermoelectromotive force is immediately generated in the Seebeck element. This thermoelectromotive force can apply a current to the Peltier element to dissipate the heat of the heat generating portion. Thus, since it is sensitive to the temperature rise of the heat generating portion, it is possible to immediately react to the operation of the semiconductor element to dissipate heat and to store heat in the semiconductor.
- the heat generating part is instantaneously cooled by heat absorption by the Peltier element 320, and heat storage of the semiconductor element can be prevented.
- FIG. 4 (a) and 4 (b) are cross-sectional views of one semiconductor element taken along different planes parallel to each other, FIG. 4 (a) shows a Seebeck element, and FIG. 4 (b) shows a Peltier element. Indicates.
- the second embodiment also includes a thermoelectric conversion element (Seebeck element) 410, a heat radiating element (Peltier element) 420, and an amplifier circuit 430 as the heat handling means 400.
- a thermoelectric conversion element Seebeck element
- a heat radiating element Peltier element
- an amplifier circuit 430 as the heat handling means 400.
- a plurality of DTI (deep trench isolation) 212 are formed on the silicon substrate 201, and the n-type semiconductor 411 and the p-type semiconductor 412 are alternately embedded in the DTI trench 212.
- an interlayer insulating layer 413 is interposed between the inner wall of the DTI cage 212 and the n-type semiconductor 411 / p-type semiconductor 412.
- the metal electrode 414 is provided in the upper part and the lower part so that the n-type semiconductor 411 and the p-type semiconductor 412 may be connected in series.
- a silicon oxide film 213 is disposed on the upper electrode 414 to form an SOI (Silicon-on-Insulator) substrate.
- SOI Silicon-on-Insulator
- an SOI substrate in which the Seebeck element 410 and the Peltier element 420 are embedded is obtained.
- the remaining semiconductor element portion is formed on the SOI layer immediately above the Seebeck element 410 and the Peltier element 420.
- the selective ion implantation collector 204 and the n-type collector layer 205 which are heat generating portions, are arranged so as to be directly above the Seebeck element 410 and the Peltier element 420.
- the current due to the thermoelectromotive force generated in the Seebeck element 410 is input to the amplifier circuit 430, and the direct current from the amplifier circuit 430 is applied to the Peltier element 420.
- the heat generating part (the selective ion implantation collector 204 and the n-type collector layer 205) of the semiconductor element is formed immediately above the Seebeck element 410 and the Peltier element 420 embedded in the silicon substrate 201.
- the heat generating portion and the Seebeck element 410 and the Peltier element 420 are extremely close to each other. Therefore, there exists an effect similar to the said 1st Embodiment.
- the semiconductor device 500 according to the third embodiment is an example in which the present invention is applied to a multi-finger type transistor.
- a large number of bipolar transistors 510 are arranged in a matrix on one semiconductor substrate 501. Even in such a case, as shown in FIG. 5, a set of a plurality of Seebeck elements 520 and Peltier elements 530 are arranged at predetermined positions in the chip.
- the heat handling means is concentrated on the part that is assumed to generate a large amount of heat in accordance with the operation characteristics of the multi-cell device. It is preferable that the arrangement of the heat response means is coarsely and densely arranged.
- the high and low arrangement density is not particularly limited by numerical values or the like. However, the arrangement is within the meaning of the present invention as long as the arrangement is dense and dense when viewed on a plane.
- FIG. 6 and 7 show a multi-finger device having a plurality of elongated fingers 540.
- the Peltier element (heat dissipating element) 530 and the Seebeck element (thermoelectric conversion element) 520 described in the above embodiment are arranged at predetermined positions.
- FIG. Reference numeral 540 denotes a gate serving as a finger, which represents a heat generating portion of the multi-finger device.
- FIG. 6 the arrangement of the Peltier element (heat dissipating element) and the Seebeck element (thermoelectric conversion element) described in the first embodiment is applied, and in FIG. 7, the Peltier element (heat dissipating element) described in the second embodiment is applied. And the arrangement of Seebeck elements (thermoelectric conversion elements) is applied.
- the Peltier element 530 and the Seebeck element are concentrated in the central region as shown in FIGS. 520 is arranged.
- the Seebeck element 520 and the Peltier element 530 may not be a one-to-one pair, and the Peltier element 530 may be driven by a current obtained from the plurality of Seebeck elements 520.
- one Seebeck element 520 may be used as a temperature monitor to control the operation of a plurality of Peltier elements 530.
- this invention is not limited only to the said embodiment, Of course, a various change can be added in the range which does not deviate from the summary of this invention.
- the amplifier circuit is provided between the Seebeck element and the Peltier element, and the current from the Seebeck element is input to the amplifier circuit and the amplified direct current is applied to the Peltier element. Is not an essential element.
- thermoelectric conversion element Seebeck element
- Any device may be used as long as it is driven in correlation with the current from the element 31.
- thermoelectric conversion element Seebeck element
- Heat dissipation element Peltier element
- the Seebeck element 31 since one end of the Seebeck element 31 is very close to the heat generating portion, a very large temperature can be obtained. Thereby, since a large electromotive force is obtained by the Seebeck element 31, even if the current from the Seebeck element 31 is directly applied to the Peltier element 32, a sufficient cooling effect can be obtained. Then, there is an epoch-making effect that the semiconductor element can be cooled effectively and effectively without requiring a complicated configuration such as an amplifier circuit.
- a temperature control unit is provided between the thermoelectric conversion element (Seebeck element) and the heat dissipation element (Peltier element), and this temperature control unit detects a temperature rise in the heat generating part of the semiconductor element by a current from the thermoelectric conversion element.
- You may comprise by the temperature rising detection part and the current control part which controls the electric current applied to a thermal radiation element (Peltier element) based on the temperature rising detection by this temperature rising detection part.
- the present invention can be used for semiconductor devices. It is particularly suitable for a semiconductor device that generates a large amount of heat.
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Abstract
Description
図1は、本発明の半導体装置に係る第1実施形態の構成を示す図である。
第1実施形態においては半導体装置としてバイポーラトランジスタを例にして説明するが、これに限定されず、例えば、CMOS(Complementary Metal Oxide Semiconductor)、SiLDMOS(Silicon Laterally Diffused MOS)、化合物FET(Field Effect Transistor)、SiBT(Silicon Bipolar Transistor)、SiGeHBT(Silicon Germanium Heterojunction Bipolar Transistor)、化合物HBT、IGBTなどにも本発明は適用できることはもちろんである。
所定の信号が与えられて半導体素子部200が動作を行う。すると、選択的イオン注入コレクタ204およびn型コレクタ層205に熱が生じる。生じた熱は近位しているゼーベック素子310の一端に瞬時に伝熱する。このようにゼーベック素子310の一端に伝熱して一端側が高温になる一方、他端側が一定温度に保たれている。すると、ゼーベック素子310の一端においてはnp方向(n型半導体からp型半導体に向かう方向)に電流が流れ、他端においてはpn方向に電流が流れる熱起電力が生じる。このように生じた熱起電力による電流iは増幅回路330に入力される。
(1)ゼーベック素子310が半導体素子部のなかの発熱部に対して一端を近位させた状態で埋設されている。このようにゼーベック素子の一端が発熱部に極めて近いため、半導体素子部の発熱部でわずかでも昇温があれば、ゼーベック素子の一端と他端とで温度差が生じる。すると、すぐにゼーベック素子に熱起電力が生じる。この熱起電力によりペルチエ素子に電流を印加して発熱部の熱を放熱させることができる。このように発熱部の昇温に対して鋭敏であるため、半導体素子の動作にすぐに反応して放熱させ、半導体内に蓄熱することが防止される。
次に、本発明の第2実施形態について図4を参照して説明する。
次に、本発明の第3実施形態について図5、図6、図7を参照して説明する。
Claims (7)
- 一または複数の半導体素子を有し、
一端が前記半導体素子の発熱部に近接した位置に配置されるとともに他端が前記発熱部の遠位側に配置された状態で前記半導体素子の内部に設けられており、前記一端と前記他端との温度差に応じて熱起電力を発生する熱電変換素子と、
一端が前記発熱部に近接した位置に配置されるとともに他端が前記発熱部の遠位側に配置された状態で前記半導体素子の内部に設けられており、前記熱電変換素子にて生じた熱起電力に応じた電流が印加されることにより前記一端側から前記他端側へ熱を移動させる放熱素子と、を備えている
ことを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記熱電変換素子の熱起電力に基づいて求められる前記発熱部の温度に応じて前記放熱素子に入力される電流値が制御される
ことを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記熱電変換素子の熱起電力から得た電流をそのまままたは増幅して前記放熱素子に通電させる
ことを特徴とする半導体装置。 - 請求項1から請求項3のいずれかに記載の半導体装置において、
当該半導体装置を構成する前記半導体素子の動作量に基づく発熱量に応じて、発熱が大きい前記半導体素子の付近に前記熱電変換素子および前記放熱素子を集中的に配置するとともに動作量および発熱量が高くない前記半導体素子の付近では前記熱電変換素子および前記放熱素子の密度を小さくする
ことを特徴とする半導体装置。 - 請求項1から請求項4のいずれかに記載の半導体装置において、
前記熱電変換素子はゼーベック素子であり、
前記放熱素子はペルチエ素子である
ことを特徴とする半導体装置。 - 請求項1から請求項5のいずれかに記載の半導体装置において、
前記熱電変換素子および前記放熱素子の少なくとも一方はSiGeを構成材料に含む
ことを特徴とする半導体装置。 - 請求項1から請求項5のいずれかに記載の半導体装置において、
前記熱電変換素子および前記放熱素子の少なくとも一方はBi2Te3を構成材料に含む
ことを特徴とする半導体装置。
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JP2010505434A JPWO2009119175A1 (ja) | 2008-03-26 | 2009-02-13 | 半導体装置 |
US12/919,460 US20110006388A1 (en) | 2008-03-26 | 2009-02-13 | Semiconductor device |
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WO2014204447A1 (en) * | 2013-06-18 | 2014-12-24 | Intel Corporation | Integrated thermoelectric cooling |
CN103985811B (zh) * | 2014-05-29 | 2016-07-27 | 赣南师范学院 | 一种场效应管片上阵列热电转换器及其全自对准制造工艺 |
DE102014222706B4 (de) | 2014-11-06 | 2018-05-03 | Dialog Semiconductor B.V. | Thermoelektrische Vorrichtung auf einem Chip |
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US20110006388A1 (en) | 2011-01-13 |
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