WO2009111964A1 - 一种表贴电阻和一种印刷电路板 - Google Patents
一种表贴电阻和一种印刷电路板 Download PDFInfo
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- WO2009111964A1 WO2009111964A1 PCT/CN2009/070600 CN2009070600W WO2009111964A1 WO 2009111964 A1 WO2009111964 A1 WO 2009111964A1 CN 2009070600 W CN2009070600 W CN 2009070600W WO 2009111964 A1 WO2009111964 A1 WO 2009111964A1
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- protective film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/003—Thick film resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/148—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals embracing or surrounding the resistive element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/006—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/02—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistors with envelope or housing
Definitions
- the present invention relates to the field of chip resistors, and in particular to a surface mount resistor and a printed circuit board.
- the surface-mounted resistor includes a ceramic substrate 11 .
- the left and right ends of the ceramic substrate 11 are provided with a terminal electrode 13 .
- the upper surface of the ceramic substrate 11 is covered with a resistive film 15 .
- the upper surface of the resistive film 15 is covered with a first protective film. 17 .
- the first protective film 17 is laid on the first protective film 17 .
- the terminal electrode 13 encloses the left and right ends of the ceramic base 11 and forms an "ear"-like shape.
- the terminal electrode 13 includes a terminal electrode innermost layer 131, a terminal electrode intermediate layer 132, and a terminal electrode outermost layer 133.
- the innermost layer of the terminal electrode may be a silver (Ag) slurry layer or a sputtered nickel-chromium (NiCr) layer
- the terminal electrode intermediate layer 132 is a nickel (Ni) layer
- the outermost layer 133 of the terminal electrode may be tin-lead (Sn).
- Pb tin-lead
- Both ends of the resistive film 15 are provided with a silver palladium (AgPd) conduction band 19 on the upper surface of the ceramic substrate 11, and the silver palladium (AgPd) conduction band 19 extends along the length of the ceramic substrate 11 and extends to
- the terminal electrode is in the innermost layer 131.
- the first protective film 17 wraps the upper surface of the resistive film 15
- the second protective film 18 wraps the upper surface of the first protective film 17, and the first protective film 17 and the second protective film Both ends of the 18 are bent downward, and the innermost layer and the intermediate layer of the terminal electrode 13 are The outermost layer forms a groove 12 at the junction of the silver palladium gPd) conduction band.
- Embodiments of the present invention provide a surface mount resistor that extends upward along the protective film through a terminal electrode, thereby making it difficult for hydrogen sulfide in the air to react with the inner electrode conduction band.
- An embodiment of the surface mount resistor includes a base 21, and both ends of the base 21 are provided with a terminal electrode 23, the terminal electrode 23 includes an intermediate layer 232, an outermost layer 233, and a resistive film is disposed on the upper surface of the base 21.
- the inner electrode conductive strip 29 is connected to the resistive film 25, wherein the surface mount resistor further includes a protective film, and the protective film is disposed on the inner electrode conductive strip 29 and the The upper surface of the resistive film 25, the protective film forms a boundary point a with the inner electrode conduction band 29, and the end of the outermost layer 233 of the terminal electrode forms a boundary point b with the protective film, the boundary a linear distance between the point a and the boundary point b is dl, a thickness of the protective film at a boundary b with the end of the outermost layer 233 of the terminal electrode is d2, and a thickness of the intermediate layer of the terminal electrode is d3, wherein The length of the dl is greater than or equal to 20 ⁇ m, the thickness of the d2 is greater than or equal to 3 ⁇ m, and the thickness of the d3 is greater than or equal to 4 ⁇ m.
- the printed circuit board includes a surface mount resistor, the surface mount resistor includes a base 21, and both ends of the base 21 are provided with terminal electrodes
- the upper electrode 23 includes an intermediate layer 232 and an outermost layer 233.
- the upper surface of the substrate 21 is provided with a resistive film 25 and an inner electrode strip 29, and the inner electrode strip 29 is connected to the resistive film 25.
- the surface-mount resistor further includes a protective film disposed on the inner electrode conduction strip 29 and the upper surface of the resistive film 25, and the protective film forms a boundary point with the inner electrode conductive strip 29
- the end of the outermost layer 233 of the terminal electrode forms a boundary point b with the protective film, the linear distance between the boundary point a and the boundary point b is dl, and the protective film is the most End of outer layer 233
- the thickness of the boundary b is d2
- the thickness of the intermediate layer of the terminal electrode is d3, wherein the length of the dl is greater than or equal to 20 ⁇ m, the thickness of the d2 is greater than or equal to 3 ⁇ m, and the thickness of the d3 is greater than or equal to 4 ⁇ m.
- FIG. 2 is a schematic view showing the corrosion of a silver-palladium (AgPd) conduction band in a surface-mount resistor in the prior art and hydrogen sulfide in the air;
- FIG. 4 is a schematic structural view of a second embodiment of a surface mount resistor according to the present invention.
- Embodiments of the present invention provide a surface mount resistor, including a base body, and ends of the base body are provided with ends An electrode, the end electrode includes an intermediate layer, an outermost layer, and a resistive film and an inner electrode strip are disposed on the upper surface of the substrate, wherein the inner electrode strip is connected to the resistive film, wherein the surface mount resistor further comprises a protective film.
- the protective film is disposed on the inner electrode conduction strip and the upper surface of the resistive film, and the protective film forms a boundary point a with the inner electrode conductive strip, the end electrode extends upward along the protective film, and the outermost layer of the end electrode
- the end forms a boundary point b with the protective film, the linear distance between the boundary point a and the boundary point b is dl, and the thickness of the protective film at the boundary b with the outermost end of the terminal electrode is d2, and the end electrode is intermediate
- the thickness of the layer of nickel (Ni) is d3, wherein the length of the dl is greater than or equal to 20 ⁇ m, the thickness of the d2 is greater than or equal to 3 ⁇ m, and the thickness of the d3 is greater than or equal to 4 ⁇ m.
- the substrate may be a ceramic substrate, and the inner electrode conduction band may be an inner electrode silver palladium conduction band.
- the protective film may be a second protective film; the protective film may also be a first protective film and a second protective film.
- the substrate is a ceramic substrate
- the inner electrode conduction band is an inner electrode silver palladium conduction band
- the terminal electrodes 23 at the left and right ends of the ceramic substrate 21 include a terminal electrode innermost layer 231, a terminal electrode intermediate layer 232, and a terminal electrode outermost layer 233.
- the innermost layer 231 of the terminal electrode is a sputtered nickel-chromium (NiCr) layer
- the intermediate layer 23 2 of the terminal electrode is a nickel (Ni) layer
- the outermost layer 233 of the terminal electrode may be a tin-lead (SnPb) layer or tin (Sn). )Floor.
- the innermost layer 231, the intermediate layer 232, and the outermost layer 233 of the terminal electrode 23 and the second protective film 28 overlap each other. Referring to FIG.
- the terminal electrode 23 wraps the left and right ends of the ceramic substrate 21, and the innermost layer 231, the intermediate layer 232 and the outermost layer 233 of the terminal electrode 23 extend along the upper surface of the ceramic substrate 21.
- the second protective film 28 extends upward.
- the inner electrode silver palladium (AgPd) conduction band 29 is covered by the innermost layer 231 of the terminal electrode 23, the second protective film 28, and the first protective film 27.
- the second protective film 28 forms a boundary point a with the inner electrode silver palladium conduction band 29, the terminal electrode 23 extends upward along the second protective film 28, and the outermost layer 233 end of the terminal electrode Forming a boundary point b with the second protective film 28, the linear distance between the boundary point a and the boundary point b is dl, dl satisfies dl of 20 ⁇ m or more, and the second protective film 28 is at the outermost layer with the terminal electrode 23.
- the thickness of the junction 233 at the end of 233 is d2, and d2 satisfies d2 of 3 ⁇ m or more, and the intermediate layer 232 of the end electrode 23 of the inner electrode silver palladium (AgPd) conduction band 29 covering the upper surface of the ceramic substrate 21 is a nickel (Ni) layer.
- the thickness is d3, and d3 satisfies that d3 is greater than or equal to 4 ⁇ .
- the terminal electrode 23 extends upward along the protective film, and the outermost layer 233 of the terminal electrode end forms a boundary point b with the protective film, and the linear distance between the boundary point a and the boundary point b is Dl, the thickness of the second protective film 28 at the boundary b with the end of the outermost layer 233 of the terminal electrode 23 is d2, which covers the end electrode 23 of the inner electrode silver palladium (AgPd) conduction band 29 on the upper surface of the ceramic substrate 21.
- AgPd silver palladium
- the thickness of the intermediate layer 232 nickel (Ni) layer is d3, and by selecting the values of dl, d2 and d3, the inner electrode silver palladium (AgPd) conduction band 29 is covered by the terminal electrode 23 to a sufficient thickness. Hydrogen sulphide in the air is difficult to react with the inner electrode silver palladium (AgPd) conduction band 29. Therefore, the surface mount resistor of the present invention has better resistance to vulcanization.
- the protective film in the above embodiment is the first protective film 27 and the second protective film 28, and the thickness of the protective film at the boundary with the outermost end of the terminal electrode is d2, and d2 satisfies d2 of 3 or more. ⁇ m.
- dl may be 20 ⁇ m, 25 ⁇ m, 35 ⁇ m, 50 ⁇ m, 75 ⁇ m ⁇ 100 ⁇ m;
- D2 can take 3um, 4 urn, 5 urn, 6 ⁇ m, 7 ⁇ m, 8 ⁇ m;
- D3 can take 5 ⁇ ⁇ , 7 ⁇ m, 9 ⁇ m, 12 ⁇ ⁇ .
- dl, d2, and d3 may be arbitrarily combined as needed, and include, but are not limited to, various combinations of the above dl, d2, and d3 values.
- FIG. 4 is a schematic diagram of Embodiment 2 of a surface mount resistor according to the present invention.
- the difference between the second embodiment and the first embodiment is that the innermost layer 231 of the terminal electrode 23 is a silver (Ag) slurry layer.
- the terminal electrode 23 extends upward along the protective film, and the outermost layer 233 of the terminal electrode end forms a boundary point b with the protective film, and the linear distance between the boundary point a and the boundary point b is dl.
- the thickness of the second protective film 28 at the boundary b with the end of the outermost layer 233 of the terminal electrode 23 is d2, which is the intermediate layer of the terminal electrode 23 of the inner electrode silver palladium (AgPd) conduction band 29 covering the upper surface of the ceramic substrate 21.
- the thickness of the 232 nickel (Ni) layer is d3 by selecting the values of dl, d2, and d3, so that the inner electrode silver palladium (AgPd) conduction band 29 is covered by the terminal electrode 23 to a sufficient thickness to make the air Hydrogen sulfide is difficult to react with the inner electrode silver palladium (AgPd) conduction band 29. Therefore, the surface-mounted resistor of the embodiment of the present invention has better resistance to vulcanization.
- the embodiment of the present invention can adjust the values of dl, d2, and d3 by controlling the lengths of dl, the thicknesses of d2, and d3, and can also have better anti-vulcanization ability of the surface-mount resistors, and the cost is relatively low.
- Embodiments of the present invention provide a printed circuit board for signal transmission, wherein the circuit board includes a surface mount resistor, the surface mount resistor includes a ceramic base 21, and both ends of the ceramic base 21 are disposed
- the terminal electrode 23 includes an intermediate layer 232 nickel (Ni) layer, an outermost layer 233 tin-lead (SnPb) layer or a tin (Sn) layer, and the upper surface of the ceramic substrate 21 is provided with a resistive film 25 and an inner electrode silver.
- the thickness of the end boundary b is d2, and the thickness of the nickel (Ni) layer of the intermediate layer of the terminal electrode is d3, wherein the length of the dl is greater than or equal to 20 ⁇ m, the thickness of the d2 is greater than or equal to 3 ⁇ m, and the thickness of the d3 is greater than or equal to 4 ⁇ .
- the length of the dl may be 20 ⁇ m, 25 ⁇ m, 35 ⁇ m, 50 ⁇ m, 75 ⁇ m or 100 ⁇ m.
- the thickness of the d2 is: 3 draws, 4 let, 5 let, 6 ⁇ , 7 ⁇ or 8 ⁇ . Further, the thickness of the d3 is: 5 ⁇ m, 7 ⁇ m, 9 ⁇ m or 12 ⁇ m.
- the protective film may be the second protective film of the first embodiment and the second embodiment, or may be the first protective film and the second protective film of the first embodiment and the second embodiment.
- the length of dl is selected to be 35 ⁇ m
- the thickness of d2 is selected to be 6 ⁇ m
- the thickness of d3 is in the range of 5 ⁇ to 10 ⁇ .
- the surface-mount resistor of the embodiment of the present invention can make the hydrogen sulfide in the air difficult to react with the inner electrode silver palladium (AgPd) conduction band 29 by selecting the values of dl, d2 and d3. Therefore, the surface mount resistor of the embodiment of the present invention has better resistance to vulcanization.
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Description
一种表贴电阻和一种印刷电路板 本申请要求于 2008 年 3 月 11 日提交中国专利局、 申请号为 200810065542.1、发明名称为"一种表贴电阻和一种印刷电路板 "的中国专利申 请的优先权, 其全部内容通过引用结合在本申请中。
技术领域
本发明涉及贴片电阻领域, 具体的, 涉及一种表贴电阻和一种印刷电路 板。
背景技术
随着技术的发展, 越来越多的设备朝小型化、 集成化发展, 相应的, 设 备内 PCB (印刷电路板)上的元器件也朝小型化、 片式化发展, 因此, 大量的 贴片式电阻应运而生。
请参阅图 1 , 为普通的表贴片式电阻结构。 该表贴式电阻包括陶瓷基体 11 , 该陶瓷基体 11的左右两端设置有端电极 13 , 该陶瓷基体 11的上表面铺 设有电阻膜 15 , 该电阻膜 15上表面铺设有第一层保护膜 17 , 第一层保护膜 17上铺设有第二层保护膜 18。该端电极 13包裹住该陶瓷基体 11的左右两端, 并且形成类似 "耳朵" 的形状。
其中, 该端电极 13包括端电极最内层 131、 端电极中间层 132以及端电 极最外层 133。 该端电极最内层可以为银(Ag )浆层或溅射镍铬(NiCr )层, 该端电极中间层 132为镍(Ni )层, 该端电极最外层 133可以为锡铅(Sn Pb ) 层或锡(Sn )层。
该电阻膜 15的两端, 并于该陶瓷基体 11上表面上设置有银钯 ( AgPd ) 导带 19 , 并且该银钯 ( AgPd )导带 19沿陶瓷基体 11长度方向延伸, 并延伸 至该端电极最内层 131 内。 该第一层保护膜 17包裹该电阻膜 15的上表面, 该第二层保护膜 18 包裹该第一层保护膜 17的上表面, 并且, 该第一层保护 膜 17和第二层保护膜 18的两端向下弯折,并与该端电极 13最内层、中间层、
最外层与该银钯 gPd)导带连接处形成一沟 12。
在实现本发明的过程中, 发明人发现现有技术中至少存在如下问题: 请参阅图 2,该沟 12位于该表贴式电阻的陶瓷基体 11的上表面上设置的 银钯 ( AgPd )导带 19处, 该表贴式电阻中的银钯 ( AgPd )导带 19易于空气 中的硫化氢(H2S)气体发上硫化反应, 生成硫化银晶体 14, 导致电阻阻值增 大或使该电阻处于开路状态, 从而缩短了该表贴式电阻的使用寿命。
发明内容
本发明实施例提供了一种表贴电阻, 通过端电极沿该保护膜向上延伸, 从而使该空气中的硫化氢难于与内电极导带发生反应。
一种表贴电阻实施例, 包括基体 21, 所述基体 21 的两端设置有端电极 23, 所述端电极 23包括中间层 232, 最外层 233, 所述基体 21的上表面铺设 电阻膜 25、 内电极导带 29, 所述内电极导带 29与所述电阻膜 25连接,其中, 所述表贴电阻还包括保护膜, 所述保护膜设置于所述内电极导带 29与所述电 阻膜 25的上表面, 所述保护膜与所述内电极导带 29形成一交界点 a, 所述端 电极的最外层 233末端与所述保护膜形成一交界点 b,所述交界点 a与所述交 界点 b的直线距离为 dl, 所述保护膜在与所述端电极最外层 233末端交界点 b的厚度为 d2, 所述端电极中间层的厚度为 d3, 其中, 所述 dl的长度大于等 于 20μηι, 所述 d2的厚度大于等于 3 μ m, 所述 d3的厚度大于等于 4 μ m。
本发明一种印刷电路板实施例, 所述印刷电路板用于信号传输, 所述印 刷电路板包括表贴电阻, 所述表贴电阻包括基体 21, 所述基体 21的两端设置 有端电极 23, 所述端电极 23包括中间层 232, 最外层 233, 所述基体 21的上 表面铺设电阻膜 25、 内电极导带 29, 所述内电极导带 29与所述电阻膜 25连 接, 所述表贴电阻还包括保护膜, 所述保护膜设置于所述内电极导带 29与所 述电阻膜 25的上表面, 所述保护膜与所述内电极导带 29形成一交界点 a, 所 述端电极的最外层 233末端与所述保护膜形成一交界点 b,所述交界点 a与所 述交界点 b的直线距离为 dl, 所述保护膜在与所述端电极最外层 233末端交
界点 b的厚度为 d2 , 所述端电极中间层的厚度为 d3 , 其中, 所述 dl的长度 大于等于 20 μ ηι, 所述 d2的厚度大于等于 3 μ m, 所述 d3的厚度大于等于 4 μ m。
由上可以看出, 该端电极 23沿该保护膜向上延伸, 该端电极末端最外层 233与该保护膜形成一交界点 b , 该交界点 a与该交界点 b的直线距离为 dl , 该保护膜在与端电极 23最外层 233末端交界点 b的厚度为 d2 , 覆盖于基体 21上表面的内电极导带 29的端电极 23的中间层 232的厚度为 d3 , 通过选取 dl、 d2和 d3的值,从而使该内电极导带 29通过该端电极 23以及第二层保护 膜 28覆盖, 达到足够的厚度, 使空气中的硫化氢难于与内电极导带 29发生 反应。 因此, 本发明实施例表贴式电阻具有更好的抗硫化能力。
附图说明 施例或现有技术描述中所需要使用的附图作简单地介绍, 显而易见地, 下面 描述中的附图仅仅是本发明的一些实施例, 对于本领域普通技术人员来讲, 在不付出创造性劳动性的前提下, 还可以根据这些附图获得其他的附图。
图 1为现有技术中表贴式电阻的结构示意图;
图 2 为现有技术中表贴式电阻中银钯 ( AgPd )导带与空气中的硫化氢发 生腐蚀后的示意图;
图 3为本发明一种表贴电阻实施例一的结构示意图;
图 4为本发明一种表贴电阻实施例二的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图, 对本发明实施例中的技术方案进行 清楚、 完整地描述, 显然, 所描述的实施例仅仅是本发明一部分实施例, 而 不是全部的实施例。 基于本发明中的实施例, 本领域普通技术人员在没有作 出创造性劳动前提下所获得的所有其他实施例, 都属于本发明保护的范围。
本发明实施例提供了一种表贴电阻, 包括基体, 该基体的两端设置有端
电极, 该端电极包括中间层, 最外层, 该基体的上表面铺设电阻膜、 内电极 导带, 其中该内电极导带与该电阻膜连接, 其中, 该表贴电阻还包括保护膜, 该保护膜设置于该内电极导带与该电阻膜的上表面, 该保护膜与该内电极导 带形成一交界点 a, 该端电极沿该保护膜向上延伸, 该端电极的最外层末端与 该保护膜形成一交界点 b, 该交界点 a与该交界点 b的直线距离为 dl, 该保 护膜在与该端电极最外层末端交界点 b的厚度为 d2, 该端电极中间层镍(Ni ) 层的厚度为 d3, 其中, 该 dl的长度大于等于 20μηι, 该 d2的厚度大于等于 3 μηι, 该 d3的厚度大于等于 4μηι。
其中, 该基体可以为陶瓷基体, 该内电极导带可以为内电极银钯导带。 该保护膜可以为第二层保护膜; 该保护膜也可以为第一层保护膜和第二层保 护膜。
由上可以看出, 该端电极沿该保护膜向上延伸, 该端电极末端最外层 233 与该保护膜形成一交界点 b, 该交界点 a与该交界点 b的直线距离为 dl, 从 而使该内电极导带通过该端电极以及保护膜覆盖, 达到足够的厚度, 从而使 该空气中的硫化氢难于与内电极导带发生反应。
下面以基体为陶瓷基体, 内电极导带为内电极银钯导带, 并参阅说明书 附图对本发明实施例进行详细阐述。
请参阅图 3, 为本发明一种表贴电阻实施例一示意图。 该表贴电阻包括陶 瓷基体 21, 该陶瓷基体 21的左右两端设置有端电极 23, 该陶瓷基体 21的上 表面铺设有电阻膜 25、 内电极银钯(AgPd)导带 29, 该电阻膜 25与该内电 极银钯(AgPd)导带 29连接。 其中, 该电阻膜 25和内电极银钯 ( AgPd)导 带 29上设置有保护膜, 该保护膜包括第一层保护膜 27、 第二层保护膜 28。
其中, 该陶瓷基体 21的左右两端的端电极 23包括端电极最内层 231、端 电极中间层 232 以及端电极最外层 233。 该端电极最内层 231 为溅射镍铬 (NiCr)层, 该端电极中间层 232为镍(Ni )层, 该端电极最外层 233可以 为锡铅( SnPb )层或锡( Sn )层。
该端电极 23的最内层 231、 中间层 232以及最外层 233与第二层保护膜 28互相交迭。 请进一步参阅图 3, 该端电极 23包裹该陶瓷基体 21的左右两 端, 并且, 该端电极 23的最内层 231、 中间层 232以及最外层 233沿陶瓷基 体 21上表面延伸, 并沿该第二层保护膜 28向上延伸。 其中, 该内电极银钯 (AgPd)导带 29被端电极 23的最内层 231、 第二层保护膜 28以及第一层保 护膜 27覆盖。
其中, 该第二层保护膜 28与该内电极银钯导带 29形成一交界点 a, 该端 电极 23沿该第二层保护膜 28向上延伸, 并且, 该端电极的最外层 233末端 与该第二层保护膜 28形成一交界点 b, 该交界点 a与该交界点 b的直线距离 为 dl, dl满足 dl大于等于 20μηι, 第二层保护膜 28在与端电极 23最外层 233末端交界点 b的厚度为 d2, d2满足 d2大于等于 3μηι, 该覆盖于陶瓷基 体 21上表面的内电极银钯( AgPd)导带 29的端电极 23的中间层 232镍(Ni ) 层的厚度为 d3, d3满足 d3大于等于 4μηι。
总之, 由上可以得知, 该端电极 23沿该保护膜向上延伸, 该端电极末端 最外层 233与该保护膜形成一交界点 b,该交界点 a与该交界点 b的直线距离 为 dl,第二层保护膜 28在与端电极 23最外层 233末端交界点 b的厚度为 d2, 该覆盖于陶瓷基体 21上表面的内电极银钯(AgPd)导带 29的端电极 23的中 间层 232镍(Ni )层的厚度为 d3, 通过选取 dl、 d2和 d3的值, 从而使该内 电极银钯 (AgPd)导带 29通过该端电极 23覆盖, 达到足够的厚度, 使该空 气中的硫化氢难于与内电极银钯 ( AgPd )导带 29发生反应。 因此, 本发明实 施例表贴电阻具有更好的抗硫化能力。
更进一步,上述实施例中的保护膜为第一层保护膜 27和第二层保护膜 28, 该保护膜在与该端电极最外层末端交界处的厚度为 d2, d2满足 d2大于等于 3 μ m。
更进一步, 本发明实施例表贴式电阻中, dl可以取 20μηι, 25 μιη, 35 μ m, 50 μ m, 75 μ m ^ 100 μ m;
d2可以取 3um , 4 urn, 5 urn, 6 μ m, 7 μ m, 8 μ m;
d3可以取 5 μ ιη, 7 μ m, 9 μ m, 12 μ ιη。
需要说明的是, 上述 dl、 d2和 d3中的值, 可以根据需要任意组合, 包 括但不限于上述 dl、 d2和 d3值的各种组合。
请参阅图 4 , 为本发明一种表贴电阻实施例二的示意图。 其中, 本实施例 二与实施例一的区别在于: 端电极 23最内层 231为银(Ag )浆层。
由上可以得知, 该端电极 23沿该保护膜向上延伸, 该端电极末端最外层 233与该保护膜形成一交界点 b , 该交界点 a与该交界点 b的直线距离为 dl , 第二层保护膜 28在与端电极 23最外层 233末端交界点 b的厚度为 d2 , 该覆 盖于陶瓷基体 21上表面的内电极银钯 ( AgPd )导带 29的端电极 23的中间层 232镍( Ni )层的厚度为 d3通过选取 dl、 d2和 d3的值, 从而使该内电极银 钯(AgPd )导带 29通过该端电极 23覆盖, 达到足够的厚度, 使该空气中的 硫化氢难于与内电极银钯 ( AgPd )导带 29发生反应。 因此, 本发明实施例表 贴式电阻具有更好的抗硫化能力。
更进一步, 本发明实施例可以通过控制 dl的长度、 d2以及 d3的厚度, 从而调整 dl、 d2、 d3的值, 亦能使该表贴电阻具有较好的防硫化能力, 并且 成本比较低。
本发明实施例提供了一种印刷电路板, 该印刷电路板用于信号传输, 其 中, 该电路板上包括表贴电阻, 该表贴电阻包括陶瓷基体 21 , 该陶瓷基体 21 的两端设置有端电极 23 , 该端电极 23 包括中间层 232镍(Ni )层, 最外层 233锡铅(SnPb )层或锡(Sn )层, 该陶瓷基体 21的上表面铺设电阻膜 25、 内电极银钯导带 29 , 其中该内电极银钯导带 29与该电阻膜 25连接, 其中, 该表贴电阻还包括保护膜, 该保护膜设置于该内电极银钯导带 29与该电阻膜 25的上表面, 该保护膜与该内电极银钯导带 29形成一交界点 a , 该端电极沿 该保护膜向上延伸, 该端电极的最外层 233末端与该保护膜形成一交界点 b , 该交界点 a与该交界点 b的直线距离为 dl ,该保护膜在与该端电极最外层 233
末端交界点 b的厚度为 d2, 该端电极中间层镍(Ni )层的厚度为 d3, 其中, 该 dl的长度大于等于 20μηι, 该 d2的厚度大于等于 3 μ m, 该 d3的厚度大于 等于 4μηι。
更进一步, 该 dl的长度可以为 20 μιη, 25 μιη, 35 μιη, 50 μιη, 75μιη或 100 μιη。
更进一步, 该 d2的厚度为: 3画 , 4讓, 5讓, 6 μιη, 7μιη或 8μιη。 更进一步, 该 d3的厚度为: 5μιη, 7 μιη, 9μιη或 12μιη。
其中, 该端电极包括端电极最内层、 中间层以及最外层。 该端电极最内 层为溅射镍铬(NiCr)层或银(Ag)浆层, 该端电极中间层为镍(M )层, 该端电极最外层可以为锡铅(SnPb)层或锡(Sn)层。
上述保护膜可以为实施例一和实施例二中的第二层保护膜, 或可以为实 施例一和实施例二中第一层保护膜和第二层保护膜。
针对上述实施例, dl的长度选取 35 μιη, d2的厚度选取 6 μιη, d3的厚度 的取值范围为 5 μιη~ 10μιη。
本发明实施例表贴式电阻可以通过选取 dl、 d2和 d3的数值, 使该空气 中的硫化氢难于与内电极银钯(AgPd)导带 29发生反应。 因此, 本发明实施 例表贴电阻具有更好的抗硫化能力。
以上对本发明实施例一种表贴电阻以及一种印刷电路板进行了详细介 绍, 对于本领域的一般技术人员, 依据本发明实施例的思想, 在具体实施方 式及应用范围上均会有改变之处, 综上所述, 本说明书实施例的内容不应理 解为对本发明的限制。
Claims
权利 要 求 书
1、 一种表贴电阻, 包括基体(21 ), 所述基体(21 ) 的两端设置有端电极 ( 23 ), 所述端电极(23 ) 包括中间层( 232 ), 最外层( 233 ), 所述基体(21 ) 的上表面铺设电阻膜(25)、 内电极导带 (29 ), 所述内电极导带 (29 ) 与所述 电阻膜(25 )连接, 其特征在于, 所述表贴电阻还包括保护膜, 所述保护膜设 置于所述内电极导带 (29 ) 与所述电阻膜(25 ) 的上表面, 所述保护膜与所述 内电极导带 (29 )形成第一交界点 ), 所述端电极的最外层( 233 )末端与所 述保护膜形成第二交界点 (b ), 所述第一交界点 (a ) 与所述第二交界点 (b ) 的直线距离为 dl,所述保护膜在与所述端电极最外层(233 )末端第二交界点(b) 的厚度为 d2, 所述端电极中间层的厚度为 d3, 其中, 所述 dl 的长度大于等于 20μηι, 所述 d2的厚度大于等于 3 μ m, 所述 d3的厚度大于等于 4 μ m。
2、 根据权利要求 1所述的表贴电阻, 其特征在于, 所述 dl 的长度为: 20 μ m, 25 μ m, 35 μ m, 50 μ m, 75 μιη或 100μιη。
3、根据权利要求 1所述的表贴电阻,其特征在于, 所述 d2的厚度为: 3画 , 4 urn, 5 urn, 6 μ m, 7 μιη或 8 μιη。
4、 根据权利要求 1所述的表贴电阻, 其特征在于, 所述 d3的厚度为: 5 μ m, 7 μ m, 9 μιη或 12 μιη。
5、根据权利要求 1所述的表贴电阻,其特征在于,所述 dl的长度为 35 μηι, 所述 d2的厚度为 6 μηι, 所述 d3的厚度取值范围为 5 μηι~ 1{)μηι。
6、 根据权利要求 1所述的表贴电阻, 其特征在于, 所述保护膜为第二层保 护膜。
7、 根据权利要求 1所述的表贴电阻, 其特征在于, 所述保护膜包括第一层 保护膜和第二层保护膜。
8、 一种印刷电路板, 所述印刷电路板用于信号传输, 所述印刷电路板包括 表贴电阻, 所述表贴电阻包括基体 ( 21 ), 所述基体 ( 21 ) 的两端设置有端电极
( 23 ), 所述端电极(23 ) 包括中间层( 232 ), 最外层( 233 ), 所述基体(21 )
的上表面铺设电阻膜(25)、 内电极导带 (29 ), 其中所述内电极导带 (29) 与 所述电阻膜(25 )连接, 其特征在于, 所述表贴电阻还包括保护膜, 所述保护 膜设置于所述内电极导带 (29) 与所述电阻膜(25 ) 的上表面, 所述保护膜与 所述内电极导带 (29)形成第一交界点 (a), 所述端电极的最外层( 233 )末端 与所述保护膜形成第二交界点( b ), 所述第一交界点( a )与所述第二交界点( b ) 的直线距离为 dl,所述保护膜在与所述端电极最外层(233 )末端第二交界点(b) 的厚度为 d2, 所述端电极中间层的厚度为 d3, 其中, 所述 dl 的长度大于等于 20μηι, 所述 d2的厚度大于等于 3 μ m, 所述 d3的厚度大于等于 4 μ m。
9、 根据权利要求 8所述的印刷电路板, 其特征在于, 所述 dl 的长度为: 20 μ m, 25 μ m, 35 μ m, 50 μ m, 75μιη或 100μιη。
10、 根据权利要求 8所述的印刷电路板, 其特征在于, 所述 d2的厚度为: 3 urn, 4 urn, 5 urn, 6 μ m, 7μιη或 8μιη。
11、 根据权利要求 8所述的印刷电路板, 其特征在于, 所述 d3的厚度为: 5 μ m, 7 μ m, 9 μιη或 12 μιη。
12、 根据权利要求 8所述的印刷电路板, 其特征在于, 所述 dl的长度为 35 μηι, 所述 d2的厚度为 6μηι, 所述 d3的厚度取值范围为 5 μ m ~ 10 μ m。
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JP2001126901A (ja) * | 1999-10-27 | 2001-05-11 | Taiyosha Denki Kk | チップ部品 |
JP2002237402A (ja) * | 2002-02-12 | 2002-08-23 | Hokuriku Electric Ind Co Ltd | チップ抵抗器 |
CN1524275A (zh) * | 2001-11-28 | 2004-08-25 | ��ķ�ɷ�����˾ | 芯片电阻器及其制造方法 |
CN1523613A (zh) * | 2003-02-18 | 2004-08-25 | ��ķ�ɷ�����˾ | 芯片电阻器 |
WO2007037279A1 (ja) * | 2005-09-27 | 2007-04-05 | Hokuriku Electric Industry Co., Ltd. | チップ状電気部品の端子構造 |
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CN1245340A (zh) * | 1998-08-18 | 2000-02-23 | 罗姆股份有限公司 | 贴片式电阻器及其制备方法 |
JP2001126901A (ja) * | 1999-10-27 | 2001-05-11 | Taiyosha Denki Kk | チップ部品 |
CN1524275A (zh) * | 2001-11-28 | 2004-08-25 | ��ķ�ɷ�����˾ | 芯片电阻器及其制造方法 |
JP2002237402A (ja) * | 2002-02-12 | 2002-08-23 | Hokuriku Electric Ind Co Ltd | チップ抵抗器 |
CN1523613A (zh) * | 2003-02-18 | 2004-08-25 | ��ķ�ɷ�����˾ | 芯片电阻器 |
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