WO2009094829A1 - Module de source lumineuse à del à dissipation thermique élevée et ensemble de source lumineuse à del à puissance élevée et à dissipation thermique élevée - Google Patents
Module de source lumineuse à del à dissipation thermique élevée et ensemble de source lumineuse à del à puissance élevée et à dissipation thermique élevée Download PDFInfo
- Publication number
- WO2009094829A1 WO2009094829A1 PCT/CN2008/002028 CN2008002028W WO2009094829A1 WO 2009094829 A1 WO2009094829 A1 WO 2009094829A1 CN 2008002028 W CN2008002028 W CN 2008002028W WO 2009094829 A1 WO2009094829 A1 WO 2009094829A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light source
- led light
- heat dissipation
- source assembly
- insulating sheet
- Prior art date
Links
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 82
- 230000008878 coupling Effects 0.000 claims description 17
- 238000010168 coupling process Methods 0.000 claims description 17
- 238000005859 coupling reaction Methods 0.000 claims description 17
- 230000000712 assembly Effects 0.000 claims description 10
- 238000000429 assembly Methods 0.000 claims description 10
- 238000003825 pressing Methods 0.000 claims description 9
- 229920001651 Cyanoacrylate Polymers 0.000 claims description 8
- 239000004830 Super Glue Substances 0.000 claims description 8
- 238000003466 welding Methods 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 238000010301 surface-oxidation reaction Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 21
- 230000035515 penetration Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/021—Components thermally connected to metal substrates or heat-sinks by insert mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
- H05K3/0061—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
Definitions
- the invention belongs to the technical field of semiconductor lighting applications, and particularly relates to a high heat dissipation LED light source assembly and a high heat dissipation high power LED light source assembly.
- LED Light-emitting diode
- the LED light source was directly packaged inside a metal lamp body.
- the most widely used high-power LEDs (rated at more than 1W) are mostly flip-chip packages, that is, the LED chips are packaged on the heat dissipation base, connected to the LED pins through gold wires, and the heat dissipation base is embedded in the plastic case.
- the LED light source formed by the LED chip is sealed with a resin or a silicone material.
- electrical components such as antistatic discharge (ESD) diodes are also packaged in the light source.
- ESD antistatic discharge
- the cooling base of most LED light sources is made of metal (mainly copper or aluminum shield) and is electrically connected to one electrode of the LED light source. Therefore, when the LED light source is in contact with the metal or alloy heat sink, the insulation protection of the circuit must be considered, which is time consuming, laborious, safe, and not stable, and the circuit connection between the LEDs is complicated.
- LED circuit board substrates are resin materials, ceramic materials, and metal/alloy materials.
- High-power LEDs are heat-generating devices, and their light efficiency, power consumption, and service life are greatly affected by temperature. Therefore, effective heat dissipation from LED light sources is an important factor in improving LED performance.
- the LED circuit substrate is used to separate the LED light source and the heat sink to form a heat dissipation path of "LED light source - circuit substrate ⁇ heat sink - external".
- the thermal conductivity of the resin material and the ceramic material is poor, and most of the high power LED light sources are applied with metal in consideration of heat dissipation.
- the substrate of the material On the other hand, considering that the LED light source and the circuit substrate, the circuit substrate and the heat sink cannot be bonded together, a large gap is inevitably generated, which is not conducive to heat dissipation, and it is also necessary to fill the contact gap with a heat conductive medium to form an "LED light source ⁇ a heat transfer medium.
- the heat dissipation path is multiple indirect heat dissipation, and there are many heat dissipation links, and the heat dissipation path is long, and the heat dissipation effect is not obvious; each contact surface is prone to contact gap, resulting in a decrease in the overall effective thermal conductivity, resulting in an increase in the junction temperature of the LED, an increase in light decay, and a decrease in the heat dissipation path.
- the present invention provides a high heat dissipation LED light source assembly and a high heat dissipation high power LED light source assembly, which shortens the heat conduction path and improves the heat dissipation effect; ensures the safety and stability of the lighting circuit; Conducive to modular production.
- a high-heat-dissipating LED light source assembly comprising a flip-chip LED light source; the flip-chip LED light source includes a heat dissipation base; wherein: the high heat dissipation LED light source assembly further comprises a high thermal conductive insulating sheet; The high thermal conductive insulating sheet is directly connected to the lower surface of the heat dissipating base of the flip chip type LED light source; wherein the high thermal conductive insulating sheet (1-2) has a thermal conductivity of between 170 and 237 W/(m ⁇ K).
- the invention also provides a high heat dissipation high power LED light source assembly, comprising: a plurality of the above light source assemblies, a coupling plate and a heat sink; wherein the LED light source assembly is located in the LED receiving hole of the connecting plate And a lower surface of the high thermal conductive insulating sheet of the LED light source assembly is directly connected to the heat sink, and the heat sink completely covers all the high thermal conductive insulating sheets.
- the invention has the advantages of novel structure, reasonableness and compactness, easy manufacture and low cost, convenient installation and maintenance, convenient promotion and application, and is particularly suitable for the field of high-power LED illumination. Compared with the existing LED substrate, the invention has the following beneficial technical effects:
- the heat dissipation area, the overall heat dissipation system is highly efficient, and can achieve good heat dissipation effect;
- the flip-chip LED light source, the high thermal conductive insulating sheet 12, and the heat dissipating body 3 are connected by thermocompression bonding, strong bonding or high temperature soldering to ensure the conformity of each contact surface and further ensure the heat dissipation performance. ;
- the substrate 22 of the LED connecting plate 2 does not intervene in the heat conduction path, and the bonding degree of the substrate 22 and the heat sink 3 is small, the processing difficulty of the substrate 22 and the heat sink 3 is reduced, and the cost is controlled and the production efficiency is improved; 5.
- the LED light source assembly 1 is connected by the LED connecting plate 2, so that the wiring connection is relatively simple, and the installation and replacement are convenient, which is more conducive to modular production.
- FIG. 1 is a schematic structural view of an embodiment of an LED light source assembly of the present invention
- FIG. 2 is a schematic perspective view of a first embodiment of a high heat dissipation high power LED light source assembly according to the present invention, wherein the high heat dissipation high power LED light source assembly has a plurality of light source assemblies mounted in the same plane and having the same illumination direction;
- FIG. 3 is a partial cross-sectional view of the high heat dissipation high power LED light source assembly shown in FIG. 2;
- FIG. 4 is a schematic diagram of a partial heat dissipation path of the high heat dissipation high power LED light source assembly shown in FIG. 2;
- FIG. 5 is a schematic perspective view of a second embodiment of a high heat dissipation high power LED light source assembly according to the present invention, wherein the high heat dissipation high power LED light source assembly has a plurality of light source assemblies installed in different planes and having different illumination directions;
- FIG. 6 is a schematic diagram of a partial heat dissipation path of the high heat dissipation high power LED light source assembly shown in FIG. 5;
- the high heat dissipation LBD light source assembly 1 includes a flip chip LED light source and a high thermal conductive insulating sheet 12; the flip chip LED light source includes LED chip 111, The heat sink base 112 and the LED pin 113; the LED chip 111 is directly connected to the upper surface of the heat sink base 112.
- the high thermal conductive insulating sheet 12 has a thermal conductivity of 170-237 W/(m.K), and the upper surface thereof is bonded to the upper surface by high temperature pressing (also known as thermocompression or high temperature penetration), solder bonding or superglue bonding.
- the bottom surface of the heat dissipation base 112 of the crystalline LED light source completely covers the heat dissipation base 112 of the flip-chip LED light source, and does not exceed the bottom surface range of the flip-chip LED light source.
- the high thermal conductive insulating sheet 12 is an alumina flake having a thickness of not more than 1 ,, or a pure aluminum flake having a thickness of not more than 2 locks and subjected to surface oxidation treatment, and the shape thereof is similar to the heat dissipating base 112 of the LED chip 111, and the size thereof does not exceed the flip chip.
- the size of the bottom surface of the LED light source is an alumina flake having a thickness of not more than 1 , or a pure aluminum flake having a thickness of not more than 2 locks and subjected to surface oxidation treatment, and the shape thereof is similar to the heat dissipating base 112 of the LED chip 111, and the size thereof does not exceed the flip chip.
- the size of the bottom surface of the LED light source is an alumina flake having a thickness of not more than 1 , or a pure aluminum flake having a thickness of not more than 2 locks and subjected to surface oxidation treatment, and the shape thereof is similar to the heat
- the high heat dissipation high power LED light source assembly has six light source assemblies, and the six light source assemblies are installed in the same In the plane, the six illumination directions are in the same direction.
- the high heat dissipation high power LED light source assembly of this embodiment comprises six light source assemblies 1, a flat rigid LED link plate 2 and a heat sink 3 having a flat surface.
- An LED receiving hole for the LED light source assembly 1 is reserved on the LED connecting plate 2, and the LED light source assembly 1 passes through the LED receiving hole on the LED connecting plate 2, and insulates the high heat conduction on the LED light source assembly 1.
- the bottom surface of the sheet 12 is attached to the surface of the heat sink 3 by a certain means.
- the heat dissipating body 3 adopts a rectangular aluminum alloy heat dissipating body, which completely covers the six high thermal conductive insulating sheets 12, and the other surface opposite to the mounting surface which is in contact with the LED connecting plate 2 is provided with a plurality of rows of grid-shaped heat dissipating ribs.
- the heat-dissipating base 112, the high-heat-conductive insulating sheet 12, and the heat-dissipating body 3 can be combined into one unit by high-temperature pressing (also referred to as hot pressing or high-temperature penetration), welding bonding or super-adhesive bonding.
- high-temperature pressing also referred to as hot pressing or high-temperature penetration
- welding bonding or super-adhesive bonding.
- the substrate 22 of the LED coupling plate 2 of the high heat dissipation high power LED light source assembly of the present embodiment is an aluminum alloy thin plate having a thickness of about 1
- the coupling circuit 21 is a copper foil circuit printed on the surface of the substrate 22.
- the surface of the connecting circuit 21 and the substrate 22 is sprayed with an insulating paste to form a surface insulating layer 23.
- the LBD connecting plate 2 is fixed on the mounting surface of the heat dissipating body 3 by high temperature pressing (also known as thermocompression or high temperature penetration), welding bonding, superglue bonding, riveting or screwing structure (screw or screw). Within a certain area.
- the contact pad 21 has a pad pad soldered to the LED pin 113, and an external circuit pad soldered to the external circuit, and the pad is exposed to the surface insulating layer 23
- the LED pins 113 of the flip-chip LED light source are soldered to the pin pads on the connection circuit 21 to achieve circuit connection.
- the heat dissipation system of the high heat dissipation high power LED light source assembly in this embodiment forms a "clad
- the heat dissipating base 112 of the LED chip 111, the high thermal conductive insulating sheet 12, and the heat dissipating body 3 are combined into a heat dissipating assembly by high temperature pressing (also known as thermocompression or high temperature penetration), welding bonding or superglue bonding, and the entire heat dissipating system can be It is regarded as the heat dissipation path of "LED chip 111 ⁇ heat-dissipation assembly ⁇ outside".
- the heat-dissipating assembly is used to increase the heat-dissipation area, the heat dissipation distance of the whole heat-dissipation path is short, and the heat-dissipation link is small, which can effectively dissipate the heat generated by the flip-chip LED light source. Achieve better heat dissipation.
- the high heat dissipation high power LED light source assembly has 12 light source assemblies, and the 12 light source assemblies are installed in different planes. , 12 illumination directions are in different directions.
- the high heat dissipation high power LED light source assembly in this embodiment includes 12 light source assemblies 1 and a flexible LED coupling plate 2 and a heat sink body 3 having a cylindrical surface. The LED light source plate 2 is reserved for the LED light source.
- the LED light source assembly 1 passes through the LED receiving hole on the LBD coupling plate 2, and the bottom surface of the high thermal conductive insulating sheet 12 on the LED light source assembly 1 is attached to the heat sink 3 by a certain means. surface.
- the heat dissipating body 3 adopts a cylindrical aluminum alloy heat dissipating body, which completely covers the 12 high thermal conductive insulating sheets 12, and the inner side surface opposite to the mounting surface which is in contact with the LED connecting plate 2 is provided with a plurality of rows of grid-shaped heat dissipating ribs.
- the thermal conductive silver paste is coated on the bottom surface of the high thermal conductive insulating sheet 12, and the LED light source assembly 1 is combined with high temperature pressing (also known as thermal pressing or high temperature penetration), welding bonding or superglue bonding.
- the heat sink 3 is combined.
- the substrate 22 of the LBD coupling plate 2 of the high heat dissipation high-power LED light source assembly of the present embodiment is a resin material film having a thickness of about 0.2
- the coupling circuit 21 is a copper foil circuit printed on the surface of the substrate 22.
- a surface of the insulating film is attached to the surface of the connecting circuit 21 and the substrate 22 to form the surface insulating layer 23.
- a strong adhesive layer is applied on the mounting surface of the LED connecting plate 2, and the LED connecting plate 2 is pressed by high temperature (also known as thermocompression or high temperature penetration), welded bonding, superglue bonding, riveting Or a threaded structure (screw or screw) is fixed in a certain area of the mounting surface of the heat sink 3.
- the heat dissipation system of the high heat dissipation high-power LED light source assembly in the embodiment forms a heat dissipation path of a "clad-type LED light source ⁇ a high thermal conductive insulating sheet 12 ⁇ a heat sink 3 ⁇ an external", and the path is not connected by the LED.
- the adhesion between the substrate 22 of the board 2 and the heat sink 3 is affected, and the heat dissipation link is stable and reliable.
- the heat dissipating base 112 of the LED chip 111 and the high thermal conductive insulating sheet 12 are combined into a whole by high temperature pressing (also known as thermocompression or high temperature penetration), welding bonding or superglue bonding, and the entire heat dissipating system can be regarded as "LED chip 111".
- high temperature pressing also known as thermocompression or high temperature penetration
- welding bonding or superglue bonding the entire heat dissipating system can be regarded as "LED chip 111".
- the LED connecting plate 1 is used to facilitate the wiring connection and adapt to the non-flat heat sink mounting surface. It has universal utility and is easy to be
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Device Packages (AREA)
- Fastening Of Light Sources Or Lamp Holders (AREA)
Abstract
L'invention concerne un module (1) de source lumineuse à DEL à dissipation thermique élevée qui comprend une source lumineuse à DEL à puce retournée et une feuille (12) isolante de conduction thermique élevée. La source lumineuse à DEL à puce retournée comprend une base (112) de dissipation thermique. La feuille (12) isolante de conduction thermique élevée est directement reliée à la surface inférieure de la base de dissipation thermique (112). La conductivité thermique de la feuille (12) isolante est comprise entre 170 et 237W / (m ×k). Un ensemble de source lumineuse à DEL à puissance élevée et à dissipation thermique élevée comprennent une carte de connexion (2), un dissipateur thermique (3) et plusieurs sources lumineuses à DEL.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200810019370.4 | 2008-01-07 | ||
CN 200810019370 CN101198216A (zh) | 2008-01-07 | 2008-01-07 | Led照明阵列的柔性线路板 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009094829A1 true WO2009094829A1 (fr) | 2009-08-06 |
Family
ID=39548287
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2008/002028 WO2009094829A1 (fr) | 2008-01-07 | 2008-12-18 | Module de source lumineuse à del à dissipation thermique élevée et ensemble de source lumineuse à del à puissance élevée et à dissipation thermique élevée |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN101198216A (fr) |
WO (1) | WO2009094829A1 (fr) |
Cited By (2)
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CN102691893A (zh) * | 2011-03-23 | 2012-09-26 | 海洋王照明科技股份有限公司 | 一种照明装置 |
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WO2013000346A1 (fr) * | 2011-06-29 | 2013-01-03 | 优杰精密机械(苏州)有限公司 | Bande/carte de lumière à del |
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CN102437148A (zh) * | 2011-12-16 | 2012-05-02 | 苏州晶品光电科技有限公司 | 柔性电路基板led二维阵列光源 |
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