WO2009081993A1 - Procédé de production d'affichage - Google Patents

Procédé de production d'affichage Download PDF

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Publication number
WO2009081993A1
WO2009081993A1 PCT/JP2008/073656 JP2008073656W WO2009081993A1 WO 2009081993 A1 WO2009081993 A1 WO 2009081993A1 JP 2008073656 W JP2008073656 W JP 2008073656W WO 2009081993 A1 WO2009081993 A1 WO 2009081993A1
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Prior art keywords
alloy film
atomic
film
temperature
alloy
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PCT/JP2008/073656
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English (en)
Japanese (ja)
Inventor
Mototaka Ochi
Hiroshi Goto
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Kabushiki Kaisha Kobe Seiko Sho
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • G02F1/133555—Transflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements

Definitions

  • the present invention relates to a method for manufacturing a display device represented by a liquid crystal display, an organic electroluminescence (EL) display, or the like. Specifically, the present invention relates to a method for manufacturing a display device having a structure in which an oxide transparent conductive film and an Al alloy film for a reflective electrode are directly connected, and alkaline corrosion during patterning of the Al alloy film. The present invention relates to a method for manufacturing a display device that can effectively prevent the above. In the following, a liquid crystal display will be described as a representative example, but the present invention is not limited to this.
  • liquid crystal displays There are two types of liquid crystal displays: a transmissive display device that uses light from a lighting device (backlight) installed behind the liquid crystal panel as a light source, a reflective display device that uses ambient light, and both transmissive and reflective types. It is roughly divided into a semi-transmission type display device having both.
  • the transmissive display device performs display by allowing the backlight irradiated from the rear surface of the liquid crystal panel to pass through the liquid crystal panel and the color filter, and performs display with a high contrast ratio regardless of the use environment. It has the advantage of being capable of being used, and is widely used in electronic devices that require large brightness such as televisions and personal computer monitors. However, since power for the backlight is required, it is somewhat unsuitable for small devices such as mobile phones.
  • a reflective display device reflects natural light or artificial light in a liquid crystal panel and displays the reflected light through a liquid crystal panel or a color filter. It is widely used mainly for calculators and watches.
  • the reflective display device has a drawback that the brightness and contrast ratio of the display are greatly affected by the use environment, and in particular, it becomes difficult to see when it becomes dark.
  • transflective display devices use reflective electrodes during the day to save power consumption, and light and turn on lights when necessary indoors or at night, depending on the usage environment. Since the display in the transmissive mode and the display in the reflective mode can be performed, there is an advantage that power consumption can be saved without being restricted by the surrounding environment, and a bright high contrast ratio display can be obtained.
  • the transflective display device is optimally used for mobile devices, and in particular, is widely used for colored mobile phones and the like.
  • FIGS. 1 and 2 correspond to FIGS. 1 and 2 disclosed in Patent Document 3 described later.
  • a transflective liquid crystal display device 11 includes a thin film transistor (hereinafter referred to as “TFT”) substrate 21, a counter substrate 15 disposed to face the TFT substrate 21, and a TFT A liquid crystal layer 23 is provided between the substrate 21 and the counter substrate 15 and functions as a light modulation layer.
  • the counter substrate 15 includes a color filter 17 including a black matrix 16, and a transparent common electrode 13 is formed on the color filter 17.
  • the TFT substrate 21 has a pixel electrode 19, a switching element T, and a wiring portion including a scanning line and a signal line. In the wiring portion, a plurality of gate wirings 5 and a plurality of data wirings 7 are arranged perpendicular to each other, and a switching element TFT (in the figure, T) are arranged in a matrix.
  • the pixel area P of the pixel electrode 19 is composed of a transmissive area A and a reflective area C.
  • the transmissive area A is a transparent pixel electrode 19a
  • the reflective area C is a transparent pixel electrode 19a.
  • a reflective electrode 19b is provided.
  • a barrier metal layer 51 made of a refractory metal such as Mo, Cr, Ti, or W is formed between the transparent pixel electrode 19a and the reflective electrode 19b.
  • a barrier metal layer 51 such as Mo or Cr is interposed between an Al-based alloy film and an oxide transparent conductive film.
  • the operation principle of the transmission mode will be described.
  • the light F of the backlight 41 disposed below the TFT substrate 21 is used as a light source.
  • Light emitted from the backlight 41 enters the liquid crystal layer 23 via the transparent pixel electrode 19a and the transmission region A, and liquid crystal molecules in the liquid crystal layer 23 are generated by an electric field formed between the transparent pixel electrode 19a and the common electrode 13.
  • the incident light F from the backlight 41 passing through the liquid crystal layer 23 is modulated.
  • the amount of light transmitted through the counter substrate 15 is controlled to display an image.
  • external natural light or artificial light B is used as a light source.
  • the light B incident on the counter substrate 15 is reflected by the reflective electrode 19b, and the alignment direction of the liquid crystal molecules in the liquid crystal layer 23 is controlled by the electric field formed between the reflective electrode 19b and the common electrode 13.
  • the passing light B is modulated.
  • the amount of light transmitted through the counter substrate 15 is controlled to display an image.
  • the pixel electrode 19 includes a transparent pixel electrode 19a and a reflective electrode 19b.
  • the transparent pixel electrode 19a is typically indium tin oxide (ITO) containing about 10% by mass of tin oxide (SnO) in indium oxide (In 2 O 3 ), or zinc oxide in indium oxide. It is formed from an oxide transparent conductive film such as indium zinc oxide (IZO) containing about mass%.
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • the reflective electrode 19b is made of a metal material having high reflectivity, and is typically an Al alloy such as pure Al or Al—Nd (hereinafter, these are collectively referred to as “Al-based alloy”). Is used. Al-based alloys are extremely useful as wiring materials because of their low electrical resistivity.
  • Galvanic corrosion is said to occur when the electrode potential difference between different metals is large, such as an oxide transparent conductive film such as ITO and an Al-based alloy film.
  • the electrode potential with respect to an Ag / AgCl standard electrode in an aqueous tetramethylammonium hydroxide (TMAH) solution that is an alkaline developer of photoresist is about -0.17 V for amorphous-ITO and about -0.19 V for poly-ITO.
  • TMAH tetramethylammonium hydroxide
  • pure Al is very low at about -1.93V.
  • Al-based alloys are very easily oxidized.
  • an Al oxide insulating layer is formed at the interface between the Al alloy film and the oxide transparent conductive film during immersion in the TMAH aqueous solution. Produced and corroded.
  • the TMAH aqueous solution penetrates into the interface with the oxide transparent conductive film along the pinholes and through grain boundaries generated in the Al-based alloy film and galvanic corrosion occurs at the interface, various problems such as oxide transparent conductive Blackening of the film, resulting in blackening of the pixel, poor pattern formation such as wiring thinning and disconnection, an increase in contact resistance between the Al alloy film and the oxide transparent conductive film, resulting in defective display (lighting).
  • the method of interposing the barrier metal layer has problems such as a complicated manufacturing process and an increase in production cost.
  • direct contact technology that can omit the formation of the barrier metal layer and can directly contact the Al alloy film with the transparent pixel electrode has been studied.
  • the direct contact technology is required to have a low contact resistance between the Al alloy film, which is an electrode material, and the transparent pixel electrode and to have excellent heat resistance so that a display device with high display quality can be obtained.
  • Patent Document 4 discloses an Al alloy film wiring material containing 0.1 to 6 atomic% of at least one alloy element selected from the group consisting of Au, Ag, Zn, Cu, Ni, Sr, Ge, Sm, and Bi. Is disclosed. If the Al alloy film is used, a conductive alloy element-containing precipitate is formed at the interface between the Al alloy film and the transparent pixel electrode, and generation of an insulating material such as aluminum oxide is suppressed. Can be reduced.
  • the addition amount of the alloy element is within the above range, the electrical resistivity of the Al alloy itself can be kept low. Further, if at least one alloy element of Nd, Y, Fe, and Co is further added to the Al alloy film, generation of hillocks (cove-like projections) can be suppressed, and heat resistance can be improved.
  • the precipitate of the alloy element is subjected to a heat treatment (annealing) at 150 to 400 ° C. (preferably 200 to 350 ° C.) for 15 minutes to 1 hour after forming an Al alloy film on the substrate by sputtering or the like. Obtained by. JP 2004-144826 A JP 2005-91477 A JP 2005-196172 A JP 2004-214606 A
  • An object of the present invention is to prevent corrosion in an alkaline developer such as an aqueous TMAH solution in a display device having a structure in which an Al alloy film for a reflective electrode is directly connected on a transparent oxide conductive film. It is an object of the present invention to provide a method for manufacturing a display device capable of effectively preventing corrosion of an alloy film.
  • a manufacturing method of a display device that has solved the above problems is a manufacturing method of a display device having a structure in which an Al alloy film for a reflective electrode is directly connected on an oxide transparent conductive film, A first step of forming the oxide transparent conductive film thereon, a second step of forming the Al alloy film on the oxide transparent conductive film, and a third step of heating the Al alloy film;
  • the Al alloy film includes 0.1 to 4 atomic% of at least one of Ni and Co, and 0.1 to 2 atomic% in total of at least one element selected from group X.
  • Al— (Ni / Co) —X alloy contained in a range, where X is La, Mg, Cr, Mn, Ru, Rh, Pt, Pd, Ir, Ce, Pr, Gd, Tb, Dy, Nd Ti, Zr, Nb, Mo, Hf, Ta, W, Y, Fe, S , Eu, Ho, Er, Tm, Yb, and Lu, the second step depending on at least one of the Ni content and the Co content of the Al— (Ni / Co) —X alloy film
  • the present invention has a gist in controlling the substrate temperature and the heating temperature in the third step.
  • the Al alloy film contains 0.5 to 4 atomic% of at least one of Ni and Co.
  • the Al alloy film contains 0.5 to 4 atomic% of Ni.
  • the temperature of the substrate in the second step and the heating temperature in the third step are as follows according to the Ni content (atomic%, [Ni]) of the Al alloy film: It is controlled as in (3).
  • the heating temperature in the third step is increased to 200 ° C. by a temperature of 50 ° C. or less set according to ⁇ (4- [Ni]). Control within the specified temperature range.
  • the heating temperature in the third step is set according to ⁇ (4- [Ni]) 100 The temperature below °C is controlled within the temperature range plus 100 °C.
  • the heating temperature in the third step is set according to ⁇ (4- [Ni]) 100 The temperature below °C is controlled within the temperature range plus 100 °C.
  • the heating temperature in the third step is set according to ⁇ (4- [Ni]) 100 The temperature below °C is controlled within the temperature range plus 100 °C.
  • the Al— (Ni / Co) —X alloy film includes at least one of 0.1 to 4 atomic% of Ni and Co, and at least of 0.1 to 2 atomic% of La and Nd. And one.
  • the Al— (Ni / Co) —X alloy film further comprises at least one element selected from the group consisting of 0.1 to 2 atomic% Z (Z is Ge, Cu, and Si). Is contained).
  • the Al— (Ni / Co) —X alloy film includes at least one of 0.1 to 4 atomic% of Ni and Co, and at least of 0.1 to 2 atomic% of La and Nd. 1 and at least one of 0.1 to 2 atomic% of Ge and Cu.
  • TMAH tetramethylammonium hydroxide
  • a preferable oxide transparent conductive film is indium tin oxide (ITO) or indium zinc oxide (IZO).
  • the thermal history (specifically, the substrate temperature at the time of film formation and the heating temperature after the film formation) of the Al alloy film as the reflective electrode is determined according to the amount of Ni and / or Co contained in the Al alloy film. Therefore, even when immersed in an alkaline developer such as TMAH aqueous solution during patterning, corrosion of the Al alloy film is suppressed, and the contact resistance between the transparent oxide conductive film and the Al alloy film is reduced. can do.
  • an alkaline developer such as TMAH aqueous solution during patterning
  • FIG. 1 is an exploded perspective view showing a configuration of a typical transflective liquid crystal display device.
  • FIG. 2 is a diagram schematically showing a cross section of a typical transflective liquid crystal display device.
  • FIG. 3 is a graph showing the immersion potential of an Al alloy film (Al-2 atomic% Ni-0.35 atomic% La) formed by changing the substrate temperature during sputtering.
  • FIG. 4 is a graph showing the reflectivity of a pure Al film and an Al—Ni—La alloy film (reflection electrode) in which the amount of Ni is changed (composition unit in the graph is atomic%).
  • FIG. 5 shows the sample No. after being immersed in the TMAH aqueous solution in the example.
  • FIG. 6 shows the sample No. after being immersed in the TMAH aqueous solution in the example.
  • 19 is 19 transmission electron micrographs.
  • FIG. 7 shows the sample No. after being immersed in the TMAH aqueous solution in the example.
  • FIG. 8 shows the sample No. after being immersed in the TMAH aqueous solution in the example. 23 is a transmission electron micrograph of 23.
  • FIG. 9 is a diagram showing a Kelvin pattern (TEG pattern) used for measuring the connection resistance between the Al alloy film and the oxide transparent conductive film (ITO film).
  • FIG. 10 is a graph showing the influence of the heating temperature and the amount of Ni on the alkali corrosion resistance when the substrate temperature is formed at room temperature in an Al—Ni—La alloy film.
  • FIG. 11 is a graph showing the influence of the heating temperature and the amount of Ni on the alkali corrosion resistance when the substrate temperature is increased to 100 ° C. in an Al—Ni—La alloy film.
  • FIG. 12 is a graph showing the influence of the heating temperature and the amount of Ni on the alkali corrosion resistance when the substrate temperature is increased to 150 ° C. and 250 ° C. in an Al—Ni—La alloy film. is there.
  • FIG. 13 is a graph showing the influence of the heating temperature and the amount of Ni on the alkali corrosion resistance when the substrate temperature is formed at room temperature in an Al—Ni—La—Cu alloy film.
  • FIG. 14 is a graph showing the influence of the heating temperature and the amount of Ni on the alkali corrosion resistance when the substrate temperature is increased to 100 ° C. in an Al—Ni—La—Cu alloy film.
  • FIG. 15 shows the effect of heating temperature and Ni amount on the alkali corrosion resistance when the substrate temperature is increased to 150 ° C. and 250 ° C. in an Al—Ni—La—Cu alloy film. It is a graph.
  • FIG. 14 is a graph showing the influence of the heating temperature and the amount of Ni on the alkali corrosion resistance when the substrate temperature is formed at room temperature in an Al—Ni—La—Cu alloy film.
  • FIG. 14 is a graph showing the influence of the heating temperature and the amount of Ni on the alkali corrosion resistance when the substrate temperature is increased to 100 ° C. in an Al—N
  • FIG. 16 is a graph showing the influence of the heating temperature and the amount of Ni on the alkali corrosion resistance when the substrate temperature is formed at room temperature in an Al—Ni—La—Ge alloy film.
  • FIG. 17 is a graph showing the influence of the heating temperature and the amount of Ni on the alkali corrosion resistance when an Al—Ni—La—Ge alloy film is formed at a substrate temperature increased to 100 ° C. .
  • FIG. 18 shows the effect of heating temperature and Ni amount on the alkali corrosion resistance when the substrate temperature is increased to 150 ° C. and 250 ° C. in an Al—Ni—La—Ge alloy film. It is a graph.
  • the present inventors represent a TMAH aqueous solution or the like when patterning an Al alloy film in a display device having a structure in which an Al alloy film for a reflective electrode is directly connected on an oxide transparent conductive film.
  • studies have been repeated.
  • a method for appropriately controlling the substrate temperature during the formation of the Al alloy film and the heating temperature after the formation of the Al alloy film, specifically, the heating temperature after the film formation are used.
  • the inventors have found that the intended purpose can be achieved by adopting a method in which the amount of Ni in the Al alloy film is controlled in consideration of the relationship with the substrate temperature during film formation, and the present invention has been completed.
  • Co may be used instead of Ni as the Al alloy film, and Co has also been found to be a synergistic element having the same action as Ni.
  • Ni and Co may be used alone or in combination. Therefore, when the Al alloy film contains only Co, the Al alloy film is formed according to the amount of Co. On the other hand, when the Al alloy film contains both Ni and Co, the Al alloy film is formed according to the Ni amount and the Co amount. It was found that the substrate temperature at the time and the heating temperature after the Al alloy film formation may be appropriately controlled. Further, according to the method of the present invention, 0.1 to 2 atomic% of the group Z (the group Z is at least one element selected from the group consisting of Ge, Cu, and Si) in the Al alloy film. It was found that the present invention can also be applied to the case of further containing.
  • an Al alloy containing Ni and / or Co and at least one group X may be referred to as an Al— (Ni / Co) —X alloy.
  • an Al alloy further including at least one of group Z in the Al— (Ni / Co) —X alloy may be referred to as an Al— (Ni / Co) —XZ alloy.
  • the amounts of Ni, Co, and group Z in the Al alloy film are represented by [Ni], [Co], and [Z]. [Z] means a single amount when the group Z element is contained alone, and a total amount when two or more group Z elements are contained.
  • Al alloy film used in the present invention (i) an Al— (Ni / Co) —X alloy film is used, and (ii) Al— (Ni / Co) —XZ. This will be described separately for the case of using an alloy film.
  • the manufacturing method of the present invention is a display having a structure in which an Al alloy film for a reflective electrode is directly connected on an oxide transparent conductive film.
  • a device manufacturing method comprising: a first step of forming the oxide transparent conductive film on a substrate; a second step of forming the Al alloy film on the oxide transparent conductive film; and the Al alloy. And a third step of heating the membrane.
  • the Al alloy film contains Ni and / or Co in an amount of 0.1 to 4 atomic% and Al— (Ni in a total amount of at least one element selected from group X in the range of 0.1 to 2 atomic%.
  • X La, Mg, Cr, Mn, Ru, Rh, Pt, Pd, Ir, Ce, Pr, Gd, Tb, Dy, Nd, Ti, Zr, Nb, Mo, It consists of Hf, Ta, W, Y, Fe, Sm, Eu, Ho, Er, Tm, Yb, and Lu.
  • the feature of the present invention is that the temperature of the substrate in the second step and the third step depend on the Ni content and / or Co content of the Al— (Ni / Co) —X alloy film.
  • the heating temperature is controlled. First, the characteristic part will be described.
  • the temperature of the substrate in the second step that is, the substrate temperature at the time of forming the Al alloy film.
  • the heating temperature in the third step that is, the heating temperature after forming the Al alloy film
  • the Ni amount ([Ni]) and / or Co amount ([Co]) in the Al alloy film are mentioned.
  • the contents of Ni and Co are given because it is considered that these elements combine with Al to form a fine intermetallic compound useful for preventing galvanic corrosion.
  • the generation of fine intermetallic compounds reduces pinholes or the like penetrating the Al alloy film, resulting in improved alkali corrosion resistance.
  • the contact resistance between the oxide transparent conductive film and the Al alloy film can be kept low. The action of these elements will be described in detail later.
  • the temperature of the substrate and The subsequent heating temperature may be controlled as in the following (1) to (3).
  • the heating temperature in the third step is set to 50 ° C. or less that is set according to ⁇ ⁇ 4-([Ni] + [Co]) ⁇ .
  • the temperature is controlled within the temperature range plus 200 ° C.
  • the heating temperature in the third step is set to ⁇ ⁇ 4-([Ni] + [Co]) ⁇ .
  • the heating temperature in the third step is set to ⁇ ⁇ 4-([Ni] + [Co]) ⁇ .
  • the temperature of 100 ° C. or less that is set accordingly is controlled within the range of the temperature plus 100 ° C.
  • the temperature of the substrate and subsequent heating depending on the amount of Ni in the Al alloy film ([Ni])
  • the temperature may be controlled as in the following (1A) to (3A).
  • the heating temperature in the third step is set according to ⁇ (4- [Ni]) 100 The temperature below °C is controlled within the temperature range plus 100 °C. (3A) When the substrate temperature is controlled to 150 ° C. or higher and 250 ° C. or lower in the second step, the heating temperature in the third step is set according to ⁇ (4- [Ni]) 100 The temperature below °C is controlled within the temperature range plus 100 °C.
  • the heating temperature after the Al alloy film formation is set.
  • the heating temperature after film formation can be set low, and these substrate temperature and heating
  • the setting (adjustment) of temperature means that the temperature can be set in consideration of the amount of Ni contained in the Al alloy film. The same applies to (1A) to (3A) above.
  • the substrate temperature is classified into the above three patterns (1) to (3) because “the lowering (lowering range) of the heating temperature after film formation is controlled in accordance with the increasing (increase width) of the substrate temperature.
  • the manufacturing method (adjustment means) of the present invention “to do” is generally based on the basic experiment of the present inventors that the above three patterns can be arranged.
  • the “substrate temperature” in the present invention means the temperature of the entire substrate. Therefore, when it is desired to control the substrate temperature to 200 ° C., the substrate temperature may be maintained at 200 ° C. during the film forming process so that the temperature of the entire substrate becomes 200 ° C. or higher.
  • the requirement of “ ⁇ ⁇ 4-([Ni] + [Co]) ⁇ ” in the above (1) to (3) is that the substrate temperature and the heating temperature depend on the amount of Ni contained in the Al alloy film ([Ni] ) And / or the amount of Co ([Co]) can be controlled and adjusted in a simplified manner for convenience.
  • the coefficient ⁇ in the above requirements can be arbitrarily adjusted depending on the substrate temperature, the heating temperature, the composition of the Al alloy film to be used, and the like.
  • “4” in the above requirements is the upper limit (4 atomic%) of the amount of Ni and / or Co that can be contained in the Al alloy film, and the amount of these elements is controlled within the range of 4 atomic%. It represents what can be done.
  • FIGS. 10 to 12 use the results of the examples described later, and arrange the relationship between the Ni amount and the heating temperature for each substrate temperature specified in the above (1) to (3). This is an investigation of the effect.
  • an Al—x atomic% Ni—0.35 atomic% La alloy film is used, and the Ni content (x) is in the range of 0 to 3 atomic% as shown in FIGS.
  • FIG. 10 shows the results when the substrate temperature is set to room temperature [corresponding to the above (1)]
  • FIG. 11 shows the results when the substrate temperature is raised to 100 ° C.
  • FIG. 12 shows the results [equivalent to (3) above] when the substrate temperature was further increased to 150 ° C. and 250 ° C. to form a film.
  • ⁇ means that the alkali corrosion resistance is excellent, and ⁇ means that the alkali corrosion resistance is inferior. Details of the evaluation method will be described later.
  • the adjustment range of the substrate temperature and the heating temperature depends on the amount of Ni in the Al alloy film. It can be seen that
  • the substrate temperature when the substrate temperature is room temperature, it is preferable to control the heating temperature to approximately 250 ° C. or higher, but the substrate temperature is 100 ° C.
  • the preferable lower limit of the heating temperature can be lowered, and the alkali corrosion resistance is improved by simply heating to 150 ° C. or higher.
  • the preferable lower limit of the heating temperature can be further lowered, and generally good alkali corrosion resistance can be obtained only by heating to 100 ° C. or higher.
  • the present invention does not uniformly control the heating temperature after film formation as in Patent Document 4 described above, but considers the amount of Ni in the Al alloy film in relation to the substrate temperature during film formation. However, it has a technical idea in adopting a control method.
  • Patent Document 4 described above is common to the present invention in that it is a direct contact technique in which heating is performed after forming an Al alloy film, although the configuration of the present invention is different from that of the present invention.
  • Patent Document 4 no consideration is given to the substrate temperature at the time of film formation, and there is no concept of controlling the heating temperature after film formation in relation to the substrate temperature. And the idea of controlling the substrate temperature is different from the present invention.
  • the upper limit of the heating temperature is not particularly limited from the viewpoint of resistance to alkali corrosion, but if it is too high, hillocks and the like are generated in the Al alloy film, and therefore preferably 350 ° C. or less, more preferably 300 ° C. or less. is there.
  • the heat treatment is preferably performed for a predetermined time in a vacuum atmosphere or an inert atmosphere (for example, in a nitrogen atmosphere).
  • Preferred heating conditions at the respective substrate temperatures (1) to (3) are as follows (I) to (III). Actually, the heating temperature may be appropriately adjusted according to the amount of Ni and / or Co (0.5 to 4 atomic%) in the Al alloy film.
  • the substrate temperature is room temperature as in (1) above, the preferred heating temperature is about 200 to 250 ° C., and the preferred heating time is about 30 to 60 minutes.
  • the substrate temperature is 100 ° C. or higher and lower than 150 ° C. as in (2) above, the preferred heating temperature is about 100 to 200 ° C., and the preferred heating time is about 30 to 60 minutes.
  • the preferred heating temperature is about 100 to 200 ° C., and the preferred heating time is about 30 to 60 minutes.
  • the preferred heating temperature is about 100 to 200 ° C., and the preferred heating time is about 30 to 60 minutes.
  • the mechanism by which the Al alloy film can be prevented from alkaline corrosion by the method of the present invention is not known in detail, a fine intermetallic compound of Al and Ni and / or Co becomes transparent to an oxide such as an ITO film by heating. Since the concentration of nickel, which has a small ionization tendency, increases at the interface between the conductive film and the Al alloy film, the electrode potential of the Al alloy film shifts to the positive side, and contact with an oxide transparent conductive film such as an ITO film It is conceivable that the potential difference becomes small. As a result, galvanic corrosion due to the developer and etching solution used in the lithography method is less likely to occur.
  • the generation of the “fine intermetallic compound of Al and Ni and / or Co” useful for preventing galvanic corrosion is not limited to the heating temperature after film formation. It is assumed that it is also affected by the substrate temperature at the time of film formation.
  • the electrode potential difference between the Al alloy film and the oxide transparent conductive film can be suppressed to about 1.55 V or less, preferably 1.5 V or less.
  • FIG. 3 shows the relationship between the immersion time and the immersion potential when immersed in the TMAH aqueous solution.
  • an Al alloy film of Al-2 atomic% Ni-0.35 atomic% La is used, the substrate temperature during film formation is room temperature ⁇ no heating sample, and the substrate temperature during film formation is room temperature ⁇ 200 ° C. Two types of heated samples were used.
  • the immersion potential immediately after the immersion is higher by about 100 mV (0.1 V) in the sample heated after the film formation than in the sample not heated after the film formation. Moreover, it can be seen that this state is maintained for about 0.7 minutes after immersion. This result means that the difference from the immersion potential of the ITO film can be kept small for a long time by heating, suggesting that galvanic corrosion can be effectively suppressed.
  • the Al alloy film used in the present invention contains Ni and / or Co in an amount of 0.1 to 4 atomic% and at least one element selected from group X in a total amount of 0.1 to 2 atomic%. It is made of an Al- (Ni / Co) -X alloy, where X is La, Mg, Cr, Mn, Ru, Rh, Pt, Pd, Ir, Ce, Pr, Gd, Tb, Dy, Nd, Ti, Zr Nb, Mo, Hf, Ta, W, Y, Fe, Sm, Eu, Ho, Er, Tm, Yb, and Lu.
  • Ni and Co have the effect of reducing the contact resistance with the oxide transparent conductive film, and also have the effect of improving the alkali corrosion resistance (see Examples described later).
  • the reason why the contact resistance with the oxide transparent conductive film is reduced by adding Ni and / or Co to the Al alloy film is unknown in detail, but the interface between the Al alloy film and the oxide transparent conductive film is unknown. This is presumably because a Ni and / or Co-containing precipitate or a Ni and / or Co concentrated layer that can prevent Al diffusion is formed at the (contact interface).
  • the Al alloy film may contain either Ni or Co, or both.
  • the content of (Ni / Co) in the Al— (Ni / Co) —X alloy film (the amount contained alone is the amount alone, and the amount contained both is the total amount) is described above. In order to effectively exhibit the effect of reducing contact resistance and the effect of improving alkali corrosion resistance, it is necessary to be 0.1 atomic% or more. On the other hand, as shown in FIG. 4 to be described later, when the content of (Ni / Co) exceeds 4 atomic%, the reflectance and electrical resistivity of the Al alloy film are high and cannot be put into practical use.
  • the content of (Ni / Co) in the Al alloy film is 0.1 atomic% or more (preferably 0.5 atomic% or more, more preferably 1 atomic% or more, further preferably 2 atomic% or more), 4 atoms. % Or less (preferably 3 atom% or less).
  • Group X elements are elements (heat resistance improving elements) that contribute to improving the heat resistance of the Al alloy film. Specifically, the inclusion of at least one of group X can effectively prevent the formation of hillocks (cove-like projections) on the surface of the Al alloy film during heating. These elements may be added alone or in combination of two or more. When two or more elements are contained, the total amount of each element may be controlled so as to satisfy the following range.
  • the content of the element belonging to Group X is 0.1 atomic% or more, preferably 0.2 atomic% or more.
  • the content of these elements is 2 atomic% or less, preferably 0.8 atomic% or less.
  • the balance of the Al— (Ni / Co) —X alloy film is substantially composed of Al and inevitable impurities.
  • Al alloy film is the same as the Al- (Ni / Co) -X alloy film of (i) described above, and further includes a group Z element (at least one element selected from the group consisting of Ge, Cu, and Si). Is contained in an amount of 0.1 to 2 atom%, and as a result, contact resistance is reduced and heat resistance is further improved.
  • Ge and Cu are preferred from the viewpoints of reducing contact resistance with the transparent conductive film and improving alkali resistance. It is shown in FIGS.
  • Al— (Ni / Co) —XZ alloy layer 0.1 to 2 atomic% of Ni and / or Co and 0.1 to 2 atomic% of La and / or Nd are used. It is most preferable to use an alloy layer containing 0.1 to 2 atomic% of Ge and / or Cu.
  • the Z content is preferably 0.2 atomic percent or more and 0.8 atomic percent or less.
  • Each element of Ge, Cu, and Si belonging to Z may be added alone or in combination of two kinds. When two or more elements are added, the total content of each element may be controlled so as to satisfy the above range.
  • the design guideline (basic concept) of the manufacturing method when using the Al- (Ni / Co) -XZ alloy film is the same as that when using the Al alloy film of (i) described above, Depending on the amount of Ni ([Ni]) and / or amount of Co ([Co]) in the Al alloy film and the amount of group Z elements ([Z]), the substrate temperature and the subsequent heating temperature are appropriately set. Just control. Specifically, when film formation is performed with the substrate temperature set to a low room temperature (around 25 ° C.) as described above (1), the heating temperature after the Al alloy film formation can be set high, On the other hand, when the film is formed with the substrate temperature set as high as about 250 ° C.
  • the heating temperature after the film formation can be set low, and the substrate temperature and the heating temperature are set. (Adjustment) can be set in consideration of the amount of (Ni / Co) and the amount of group Z contained in the Al alloy film.
  • the elements to be considered for the prevention of galvanic corrosion include the elements of group Z in addition to the aforementioned contents of Ni and Co. This is because, like Ni and Co, it is considered that these elements combine with Al to form a fine intermetallic compound useful for preventing galvanic corrosion.
  • the generation of fine intermetallic compounds reduces pinholes or the like penetrating the Al alloy film, resulting in improved alkali corrosion resistance.
  • the contact resistance between the oxide transparent conductive film and the Al alloy film can be kept low.
  • the setting (adjustment) of the substrate temperature and the heating temperature depends on the amount of Ni in the Al alloy film and / or Alternatively, it is preferable to set not only the amount of Co but also the amount of element of group Z (single amount or total amount). This will be described in detail with reference to FIGS. 13 to 15 (containing Cu as an element of group Z) and FIGS. 16 to 18 (containing Ge as an element of group Z).
  • ⁇ means that the alkali corrosion resistance is excellent, and ⁇ means that the alkali corrosion resistance is inferior.
  • FIGS. 13 to 15 Al—x atomic% Ni—0.35 atomic% La—0.5 atomic% Cu alloy film [Ni content (x) is in the range of 0 to 3 atomic% as shown in FIGS. Is within.
  • the relationship between the amount of Ni and the heating temperature is arranged for each substrate temperature specified in the above (1) to (3), and the influence of these on the alkali corrosion resistance is investigated.
  • FIG. 13 shows the results when the substrate temperature is set to room temperature [corresponding to (1) above]
  • FIG. 14 shows the results when the substrate temperature is raised to 100 ° C.
  • FIG. 15 shows the result [equivalent to (3) above] when the film was formed with the substrate temperature further increased to 150 ° C. and 250 ° C.
  • FIGS. 13, 14, and 15 show the results ( ⁇ , ⁇ ) when using the Al alloy film, as well as FIGS. (Without Cu) are also shown side by side ( ⁇ , ⁇ ).
  • the two are shifted laterally so that they do not overlap.
  • ⁇ and ⁇ on the right side are examples of addition of Cu
  • ⁇ and ⁇ on the left side are no addition of Cu. It is an example.
  • the size of the plot is also changed so that the difference between the two can be further understood.
  • the case where the size of ⁇ and ⁇ is large is an example of addition of Cu
  • the case where the size of ⁇ and ⁇ is small is an example of no addition of Cu.
  • the results of adding 1 atom% of Ni and the results of adding 1 atom% of Ni as an example of adding Cu are added as examples in which Cu is not added.
  • the Al— (Ni / Co) —La alloy film described above was used when the Al—Ni—La—Cu alloy film further containing Cu of group Z was used as the Al alloy film. It was found that the same tendency was observed. In other words, when the substrate temperature is low, it is not possible to effectively prevent alkali corrosion unless the heating temperature is generally high, but when the substrate temperature is high, alkali corrosion can be suppressed even if the heating temperature is low. I understand.
  • the adjustment range of the substrate temperature and the heating temperature is the amount of Ni in the Al alloy film or Cu It was also found that it was determined according to the amount.
  • the alkali corrosion resistance is further improved by the addition of Cu. Therefore, when the amount of Ni and the substrate temperature are the same, the preferable lower limit of the heating temperature is further increased. I also found that it can be lowered.
  • the substrate temperature is set to room temperature and the Al-2 atomic% Ni-0.35 atomic% La alloy film not containing Cu is used, it is preferable to control the heating temperature to approximately 250 ° C. or higher.
  • the preferable lower limit of the heating temperature can be lowered, and the heating is generally performed at 150 ° C. or higher. Only the alkali corrosion resistance is improved. This same trend was seen when the Ni content was 3 atomic% and in all cases where the Ni content was 1 atomic%. Therefore, when the substrate temperature was set to room temperature, it was demonstrated that when the Cu-containing Al alloy film was used, the preferable lower limit of the heating temperature could be lowered as compared with the case where an Al alloy film not containing Cu was used.
  • FIG. 16 to FIG. 18 (containing Ge as an element of group Z) will be considered.
  • the relationship between the amount of Ni and the heating temperature was arranged for each substrate temperature, and the influence of these on alkali corrosion resistance was investigated.
  • FIG. 16 shows the results when the substrate temperature is set to room temperature [corresponding to the above (1)]
  • FIG. 17 shows the results when the substrate temperature is raised to 100 ° C.
  • FIG. 18 shows the result [equivalent to (3) above] when the film was formed with the substrate temperature further increased to 150 ° C. and 250 ° C.
  • FIG. 16, FIG. 17 and FIG. 18 are the same as those of FIGS. 0.35 atom%) results ( ⁇ , ⁇ ) are also shown side by side.
  • the plots are laterally shifted so that they do not overlap.
  • Ni, ⁇ and ⁇ on the right side are examples of Ge addition
  • ⁇ and ⁇ on the left side are Ge. This is an additive-free example.
  • the size of the plot is also changed so that the difference between the two can be further understood.
  • the case where the size of ⁇ and ⁇ is large is an example of addition of Ge
  • the case where the size of ⁇ and ⁇ is small is an example of no addition of Ge.
  • the alkali corrosion resistance is further improved by the addition of Ge. Therefore, when the amount of Ni and the substrate temperature are the same, the preferable lower limit of the heating temperature is further increased. I also found that it can be lowered. In particular, it has also been found that the addition effect of Ge tends to be exerted remarkably when the Ni content is a low concentration of about 1 atomic% or less, although it cannot be uniformly arranged.
  • substrate temperature room temperature
  • good alkali corrosion resistance can be obtained unless the heating temperature is set to 250 ° C.
  • an Al-1 atomic% Ni-0.2 atomic% La-0.5 atomic% Ge alloy film containing Ge was used, it was resistant to alkali corrosion only by heating to 200 ° C or higher. was found to improve.
  • a similar tendency is seen when the Ni content in the Al alloy film is 0.5 atomic%, and when an Al-0.5 atomic% Ni-0.2 atomic% La alloy film not containing Ge is used.
  • the present invention is characterized in that the substrate temperature and the heating temperature are appropriately controlled according to the amount of Ni and / or Co (including the amount of Z when an element of group Z is included).
  • the film forming process other than the above is not particularly limited, and usually used means can be employed. Therefore, the first step of forming the oxide transparent conductive film on the substrate and the second step of forming the Al alloy film on the oxide transparent conductive film (excluding the substrate temperature) are appropriately performed using known methods. Select and use.
  • a typical example of the method for forming the Al alloy film is a sputtering method using a sputtering target.
  • the sputtering method is to form a plasma discharge between a substrate and a sputtering target (target material) composed of the same kind of material as the thin film to be formed, and to make the gas ionized by the plasma discharge collide with the target material.
  • target material a sputtering target
  • atoms of the target material are knocked out and stacked on a substrate to produce a thin film.
  • the sputtering method has an advantage that a thin film having the same composition as the target material can be formed.
  • an Al alloy film formed by a sputtering method has an advantage that it can dissolve an alloy element such as Nd that cannot be dissolved in an equilibrium state, and exhibits excellent performance as a thin film.
  • the gist of the present invention is not limited to the above, and a method usually used for a method of forming an Al alloy film can be appropriately employed.
  • the order of patterning is not particularly limited.
  • the transparent oxide conductive film and the Al alloy film may be sequentially formed on the substrate by sputtering or the like, and then the transparent oxide conductive film and the Al alloy film may be patterned by lithography and etching. .
  • an oxide transparent conductive film may be formed on the substrate and patterned, and then an Al alloy film may be formed and patterned.
  • the ITO film constituting the oxide transparent conductive film is in an amorphous state before heating, and is dissolved in an etching solution for aluminum containing phosphoric acid as a main component. Therefore, there is selectivity with respect to the etching solution for aluminum. Therefore, when an Al alloy film is formed after the oxide transparent conductive film is patterned and etched, it is possible to prevent unnecessary etching of the already formed oxide transparent conductive film.
  • an IZO film may be used as the oxide transparent conductive film.
  • an oxide transparent conductive film having selectivity with an Al etchant can be used without any problem.
  • the present invention does not limit the type of the oxide transparent conductive film.
  • Example 1 An ITO film (thickness: about 50 nm) containing about 10% by mass of SnO is sputtered on a substrate (non-alkali glass plate, thickness 0.7 mm, 4 inch size) as an oxide transparent conductive film (transparent pixel electrode). It formed by the method and patterned by photolithography. The sputtering conditions at this time are pressure: about 3 mTorr under an argon atmosphere.
  • Al-based alloy film On the ITO film patterned as described above, a pure Al film and an Al—Ni—La alloy film (hereinafter referred to as “Al-based alloy film”; film thickness: 100 nm) are formed as a reflective electrode by sputtering. Formed.
  • the substrate temperature at the time of sputtering is as shown in Table 1 and Table 2 below, and the sputtering conditions are pressure: about 2 mTorr under an argon atmosphere.
  • heat treatment was performed for 30 minutes at the heating temperatures shown in Tables 1 and 2 under a nitrogen atmosphere.
  • an unheated product was also prepared.
  • coating a resist to Al type alloy film and exposing it developed by being immersed in 2.38 mass% TMAH aqueous solution (20 degreeC) for 1 minute.
  • the heat treatment is performed in a nitrogen atmosphere.
  • the heat treatment is not limited thereto, and is performed in a known atmosphere condition (for example, in a vacuum atmosphere with a degree of vacuum of about 3 ⁇ 10 ⁇ 4 Pa). May be.
  • Alkaline corrosion resistance Alkaline corrosivity of each Al-based alloy film was evaluated by measuring the potential difference with a voltmeter by short-circuiting the electrode of the Al-based alloy film to be measured and the silver-silver chloride reference electrode in the above TMAH aqueous solution. .
  • the electrode potential of the poly-ITO film was also measured.
  • no corrosion was observed when the optical microscope observation and the transmission electron microscope observation after immersion in the THAH aqueous solution were performed, and the electrode potential difference from amorphous ITO was not observed.
  • ⁇ excellent in alkali corrosion resistance
  • those not satisfying any of the above requirements were evaluated as x (inferior in alkali corrosion resistance).
  • the contact resistance when the Al-based alloy film and the ITO film were directly connected was measured by a four-terminal method using the Kelvin pattern (contact hole size, 20, 40, and 80 ⁇ m square) shown in FIG.
  • the content of the alloy element in the Al-based alloy film was determined by an ICP emission analysis (inductively coupled plasma emission analysis) method.
  • Tables 1 and 2 show the results of the electrode potentials measured for 19 (Al-2 atom% Ni-0.35 atom% La) as described above.
  • Al-based alloy films (Nos. 5, 6, 8 to 10, 12 to 14, 16 to 18, 23, 26 in Table 1) produced by the method of the present invention were used. 27, 29-31, 33-35, No. 40, 45, 48, 49, 52, 53) in Table 2 are all excellent in alkali corrosion resistance, and are composed of an Al alloy film and an ITO film. The contact resistance value is also low.
  • FIG. 5 and FIG. 19 is an optical microscope photograph and a transmission electron microscope cross-sectional photograph after immersion in a TMAH aqueous solution (FE-TEM, Hitachi, Ltd., model name: “HF2000” is used).
  • 7 and 8 show sample Nos. 23 is an optical microscope photograph and a transmission electron microscope cross-sectional photograph after immersion in a TMAH aqueous solution. In observation with a transmission electron microscope, the film composition was identified by electron excitation X-ray analysis.
  • an Al alloy of Al-x atomic% Ni-0.35 atomic% La (x is 1 to 5.5 atomic%) is used, the substrate temperature during film formation is set to room temperature, and heating after film formation is performed.
  • the reflectance of the sample formed by controlling the temperature to about 250 ° C. and the heating time to about 30 minutes was measured.
  • the reflectance was measured using a visible / ultraviolet spectrophotometer “V-570” manufactured by JASCO Corporation in the measurement wavelength range of 1000 to 250 nm.
  • V-570 visible / ultraviolet spectrophotometer
  • FIG. 4 is a graph showing the change in reflectance (wavelength: 850 to 250 nm) of each sample.
  • the reflectance at 550 nm is taken as a reference, a high reflectance of about 88% to 92% was obtained in a sample satisfying the range of the present invention with an Ni amount of 1 to 4 atomic%, whereas In the sample where the amount of Ni exceeds 5.5 atomic% and exceeds the range of the present invention, the reflectance is reduced to approximately 84%.
  • the present invention relates to a method for manufacturing a display device represented by a liquid crystal display, an organic electroluminescence (EL) display, or the like. Specifically, the present invention relates to a method for manufacturing a display device having a structure in which an oxide transparent conductive film and an Al alloy film for a reflective electrode are directly connected, and alkaline corrosion during patterning of the Al alloy film. The present invention relates to a method for manufacturing a display device that can effectively prevent the above.
  • the thermal history specifically, the substrate temperature at the time of film formation and the heating temperature after the film formation
  • the Al alloy film as the reflective electrode is determined according to the amount of Ni and / or Co contained in the Al alloy film. Therefore, even when immersed in an alkaline developer such as TMAH aqueous solution during patterning, corrosion of the Al alloy film is suppressed, and the contact resistance between the transparent oxide conductive film and the Al alloy film is reduced. can do.

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Abstract

L'invention concerne un procédé de production d'un affichage qui comprend une structure constituée d'un film d'oxyde conducteur et transparent et d'un film d'alliage d'aluminium qui sert d'électrode réfléchissante et qui a été disposé sur le film d'oxyde et directement relié à ce dernier. Ledit procédé comprend : une première étape dans laquelle le film d'oxyde conducteur et transparent est formé sur un substrat; une deuxième étape dans laquelle le film d'alliage d'aluminium est formé sur le film d'oxyde conducteur et transparent; et une troisième étape dans laquelle le film d'alliage d'aluminium est chauffé à une température donnée. Le film d'alliage d'aluminium contient 0,1-4 at.% de nickel ou de cobalt et 0,1-2 at.% de lanthane. La température donnée de la troisième étape est déterminée en fonction de la teneur en nickel ou en cobalt et de la température du substrat à laquelle le film d'alliage d'aluminium est formé dans la deuxième étape. Le film d'alliage d'aluminium formé dans ce procédé est moins corrodé par des solutions de développement alcalines telles qu'une solution aqueuse TMAH.
PCT/JP2008/073656 2007-12-26 2008-12-25 Procédé de production d'affichage WO2009081993A1 (fr)

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Cited By (2)

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JP2011033834A (ja) * 2009-07-31 2011-02-17 Kobe Steel Ltd 表示装置の製造方法
US8617721B2 (en) 2009-10-12 2013-12-31 Samsung Display Co., Ltd. Organic light-emitting device

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KR100858297B1 (ko) * 2001-11-02 2008-09-11 삼성전자주식회사 반사-투과형 액정표시장치 및 그 제조 방법
JP2011091352A (ja) * 2009-09-28 2011-05-06 Kobe Steel Ltd 薄膜トランジスタ基板およびその製造方法並びに表示装置
JP5719610B2 (ja) * 2011-01-21 2015-05-20 三菱電機株式会社 薄膜トランジスタ、及びアクティブマトリクス基板
JP5524905B2 (ja) * 2011-05-17 2014-06-18 株式会社神戸製鋼所 パワー半導体素子用Ａｌ合金膜
JP7053290B2 (ja) * 2018-02-05 2022-04-12 株式会社神戸製鋼所 有機ｅｌディスプレイ用の反射アノード電極

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JPH0790552A (ja) * 1993-07-27 1995-04-04 Kobe Steel Ltd Ａｌ合金薄膜及びその製造方法並びにＡｌ合金薄膜形成用スパッタリングターゲット
JP2004214606A (ja) * 2002-12-19 2004-07-29 Kobe Steel Ltd 表示デバイスおよびその製法、ならびにスパッタリングターゲット

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JPH0790552A (ja) * 1993-07-27 1995-04-04 Kobe Steel Ltd Ａｌ合金薄膜及びその製造方法並びにＡｌ合金薄膜形成用スパッタリングターゲット
JP2004214606A (ja) * 2002-12-19 2004-07-29 Kobe Steel Ltd 表示デバイスおよびその製法、ならびにスパッタリングターゲット

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Publication number Priority date Publication date Assignee Title
JP2011033834A (ja) * 2009-07-31 2011-02-17 Kobe Steel Ltd 表示装置の製造方法
US8617721B2 (en) 2009-10-12 2013-12-31 Samsung Display Co., Ltd. Organic light-emitting device

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