WO2009081689A1 - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
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- WO2009081689A1 WO2009081689A1 PCT/JP2008/071605 JP2008071605W WO2009081689A1 WO 2009081689 A1 WO2009081689 A1 WO 2009081689A1 JP 2008071605 W JP2008071605 W JP 2008071605W WO 2009081689 A1 WO2009081689 A1 WO 2009081689A1
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- stress relaxation
- relaxation layer
- ceramic substrate
- semiconductor
- stress
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- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
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- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Definitions
- the present invention relates to a semiconductor module in which an insulating substrate on which a semiconductor element is mounted and a cooling member are assembled with a stress relaxation layer interposed therebetween.
- High-voltage, high-current power modules mounted on hybrid vehicles and electric vehicles have a large amount of self-heating when operating semiconductor elements. Therefore, the in-vehicle power module needs to have a cooling structure with high heat dissipation.
- FIG. 6 shows an example of a power module having a cooling structure.
- the power module 90 includes a plurality of semiconductor elements 10, a ceramic substrate 20 on which the semiconductor elements 10 are mounted, and a cooler 30 having a refrigerant flow path therein.
- the power module 90 radiates heat generated from the semiconductor element 10 by the cooler 30.
- the linear expansion coefficient of the ceramic substrate 20 is as small as 4 to 6 ppm / ° C.
- the coefficient of linear expansion of aluminum as the material of the cooler 30 is relatively large at 23 ppm / ° C.
- a material such as high-purity aluminum having high thermal conductivity and a linear expansion coefficient close to that of the cooler 30 is used between the ceramic substrate 20 and the cooler 30.
- a stress relaxation layer 40 is provided (for example, Patent Document 1). As shown in FIG. 7, the stress relaxation layer 40 is provided with a large number of through holes 41, which absorb the linear expansion strain between the ceramic substrate 20 and the cooler 30.
- the power module as a whole is promoted to be compact, but the ceramic substrate 20 itself is increased in size.
- the stress relaxation layer 40 also increases in size. Therefore, the strain generated in the stress relaxation layer 40 (mainly the outer periphery thereof) becomes large, and the stress relaxation effect is insufficient. As a result, problems such as warping and cracking occur in the ceramic substrate 20. In particular, if a crack is generated immediately below or in the vicinity of the semiconductor element 10, the damage is large.
- the through hole 41 is a space and has low thermal conductivity. Further, when a number of spaces are formed in the stress relaxation layer 40, the heat transfer path is blocked by these spaces. Therefore, in order to ensure high heat dissipation, it is preferable that the number of through holes 41 be as small and small as possible. That is, since the stress relaxation layer 40 also functions as a heat transfer to the cooler 30, there is a trade-off between improving the stress relaxation effect and ensuring high thermal conductivity.
- the present invention has been made to solve the problems of the conventional semiconductor device described above. That is, the problem is to provide a semiconductor module that achieves both improvement of the stress relaxation effect and securing of high thermal conductivity.
- a semiconductor module has a cooling member (heat sink), an insulating substrate on which a plurality of semiconductor elements are arranged, one surface bonded to the insulating substrate, and the other surface bonded to the cooling member.
- a stress relaxation layer having both a heat transfer function and a stress relaxation function, and the stress relaxation layer is provided with at least one slit for separating the stress relaxation layer into a plurality of pieces, It is characterized in that it is located in the non-semiconductor element region, which is a region other than the projection region of the semiconductor element, as viewed from the thickness direction of the stress relaxation layer in the plane of the stress relaxation layer.
- a stress relaxation layer is disposed between an insulating substrate on which a semiconductor element is mounted and a cooling member, and these are joined to form an integral body. Further, the stress relaxation layer is divided into a plurality of pieces by at least one slit. Therefore, even if there is a difference in expansion and contraction between the cooling member and the insulating substrate due to temperature changes during reliability evaluation such as cooling cycles and when used in the market, the stress strain borne by each piece is small. . Therefore, stress strain can be absorbed with certainty, cracks and warpage in the insulating substrate and bonding material are prevented, and high reliability is ensured.
- the slit is defined as a non-semiconductor element region and a non-semiconductor element region other than the projection region. Located in the element region. That is, the slit which is a space is not arranged in the semiconductor element region. Therefore, the effect of the slit on the heat transfer path is small. Therefore, high thermal conductivity is ensured.
- the semiconductor elements are distributed and arranged in the individual pieces. Therefore, stress strain is assigned to each individual piece, and each individual piece can exert its effect within the range of its own stress relaxation ability.
- At least one of the slits crosses the stress relaxation layer. That is, by providing a slit that crosses the stress relaxation layer, the size of the outer periphery of each piece can be reduced. Therefore, each piece part can exhibit the stress relaxation ability more reliably.
- each piece of the stress relaxation layer is preferably different according to the arrangement of the semiconductor elements. That is, the position of the slit is designed according to the semiconductor element. As a result, each piece can exert its stress relaxation capability more reliably, and the degree of freedom in designing the layout of the semiconductor elements is high.
- a semiconductor module that achieves both improvement of the stress relaxation effect and securing of high thermal conductivity is realized.
- the present invention is applied as an intelligent power module for a hybrid vehicle.
- the power module 100 of the present embodiment includes a semiconductor element 10 that is a heating element, a ceramic substrate 20 on which the semiconductor element 10 is mounted, a cooler 30 that includes a refrigerant flow path therein, and a ceramic substrate. 20 and a cooler 30, and a stress relaxation layer 45 having a stress relaxation function for relaxing stress strain due to a difference in linear expansion coefficient between the two.
- the power module 100 radiates heat from the semiconductor element 10 to the cooler 30 via the ceramic substrate 20 and the stress relaxation layer 45.
- the semiconductor element 10 is an electronic component constituting the inverter circuit (in this embodiment, the IGBT is 11 and the diode is 12).
- a plurality of semiconductor elements 10 are mounted on the ceramic substrate 20 and fixed by soldering.
- many semiconductor elements are mounted on the in-vehicle power module, only a part thereof is schematically illustrated in this specification for the sake of simplicity.
- the ceramic substrate 20 may be formed of any ceramic as long as the required insulating properties, thermal conductivity, and mechanical strength are satisfied.
- aluminum oxide or aluminum nitride is applicable.
- aluminum nitride (AlN) is used as the ceramic substrate 20.
- the linear expansion coefficient is 4.6 ppm / ° C., which is substantially equal to the base material AlN.
- a metal pattern layer 21 is provided on the upper surface of the ceramic substrate 20.
- the pattern layer 21 only needs to have high electrical conductivity and excellent wettability with solder.
- high-purity aluminum with nickel plating can be used.
- a metal layer 22 is provided on the lower surface of the ceramic substrate 20.
- the metal layer 22 only needs to have high thermal conductivity and excellent wettability with the brazing material. For example, high purity aluminum is applicable.
- the stress relaxation layer 45 is provided with a stress absorption space that absorbs stress strain caused by a difference in linear expansion coefficient between the aluminum cooler 30 and the ceramic substrate 20.
- the stress relaxation layer 45 of this embodiment is an aluminum plate having a purity of 99.99% or more.
- the linear expansion coefficient of the stress relaxation layer 45 made of high-purity aluminum is 23.5 ppm / ° C., which is equal to the intrinsic value of aluminum.
- High-purity aluminum is a relatively soft material with a Young's modulus of 70.3 GPa and has a large deformation with respect to stress. Therefore, the stress strain between the cooler 30 and the ceramic substrate 20 can be relaxed.
- the stress relaxation layer 45 has a function of dissipating heat from the semiconductor element 10 in the surface direction of the stress relaxation layer 45 and transferring heat to the cooler 30. That is, the stress relaxation layer 45 has a heat transfer function as well as a stress relaxation function.
- the stress relaxation layer 45 is provided with two slits 461 and 462 in the joint surface with the ceramic substrate 20.
- the slits 461 and 462 become stress absorption spaces.
- the slits 461 and 462 penetrate the stress relaxation layer 45 in the thickness direction (vertical direction in FIG. 1), and further, one slit 461 crosses the stress relaxation layer 45 in plan view, and the other slit 462
- the stress relaxation layer 45 is cut vertically. That is, the stress relaxation layer 45 is completely divided into a plurality of pieces by the slits 461 and 462.
- the stress relaxation layer 45 of this embodiment is divided into four pieces of individual pieces 45A, 45B, 45C, and 45D by slits 461 and 462.
- the positional relationship between the slits 461 and 462 and the semiconductor element 10 will be described later.
- the cooler 30 has cooling fins 31 that are arranged in a line in the interior of the cooler 30, and forms a coolant channel 35 between the adjacent cooling fins 31.
- cooling fins 31 that are arranged in a line in the interior of the cooler 30, and forms a coolant channel 35 between the adjacent cooling fins 31.
- aluminum having high thermal conductivity and light weight can be applied.
- refrigerant either liquid or gas may be used.
- the ceramic substrate 20 and the stress relaxation layer 45 are directly bonded onto the cooler 30 by brazing in order to efficiently transfer heat from the semiconductor element 10 to the cooler 30.
- a brazing material such as an Al—Si based alloy or an Al—Si—Mg based alloy is applicable.
- an Al—Si alloy is used and brazing is performed at a temperature of less than 600 ° C.
- the cooler 30 and the stress relieving member 45 may be joined simultaneously with the formation of the cooler 30.
- FIG. 3 shows an example of the arrangement of the semiconductor elements 10 (IGBT 11 and diode 12) on the ceramic substrate 20 in plan view. Further, in FIG. 3, the arrangement of the individual pieces 45A, 45B, 45C, and 45D of the stress relaxation layer 45 is shown by broken lines.
- one IGBT 11 and one diode 12 are arranged on each piece 45A, 45B, 45C, 45D when viewed from the thickness direction of the stress relaxation layer 45. More specifically, IGBT11 and each diode 12 are arrange
- the slits 461 and 462 of the stress relaxation layer 45 are not located under the semiconductor element 10.
- 4 shows an in-plane of the stress relaxation layer 45 as viewed from the thickness direction of the stress relaxation layer, an element region 45X which is a projection region of the semiconductor element 10 below the semiconductor element 10 and a position below the semiconductor element 10.
- the non-element region 45Y is shown separately.
- the slits 461 and 462 are provided so as to be accommodated in the non-element region 45Y and do not straddle the element region 45X.
- the stress relaxation layer 45 is separated into pieces by the slits 461 and 462. Therefore, even if the size of the stress relaxation layer 45 as a whole increases as the size of the ceramic substrate 20 increases, the size of each piece 45A, 45B, 45C, 45D is small. Therefore, the stress strain generated in each piece 45A, 45B, 45C, 45D is small, and the stress relaxation layer 45 as a whole can sufficiently exhibit the stress relaxation effect.
- the slits 461 and 462 are arranged between the semiconductor elements so that the semiconductor elements 11 and 12 are equally arranged in the individual pieces 45A, 45B, 45C and 45D. Thereby, the semiconductor elements 11 and 12 are distributed and arranged in the individual pieces 45A, 45B, 45C, and 45D. Therefore, the stress strain is shared by the individual piece portions 45A, 45B, 45C, and 45D, and the individual piece portions 45A, 45B, 45C, and 45D can exhibit their effects within the range of their own stress relaxation ability.
- the stress of the stress relaxation layer 45 and the ceramic substrate 20 becomes maximum near the outer periphery of the divided pieces 45A, 45B, 45C, 45D.
- the portions where the individual pieces 45A, 45B, 45C, 45D and the ceramic substrate 20 are joined are in a state where the ceramic substrate 20 is lined with the individual pieces 45A, 45B, 45C, 45D, and the strength is high. Therefore, when the ceramic substrate 20 reaches the limit and cracks are generated, there is a high possibility that the ceramic substrate 20 is generated from a portion not joined to the individual pieces 45A, 45B, 45C, and 45D. That is, cracks are likely to occur at the portions facing the slits 461 and 462.
- the semiconductor element 10 is mounted only on the portion on the ceramic substrate 20 where the individual pieces 45A, 45B, 45C, and 45D exist.
- the slits 461 and 462 exist only in the non-element region 45Y between the semiconductor elements. Therefore, even if a crack occurs in the ceramic substrate 20, the crack occurs between the semiconductor elements 10 and 10. Therefore, a fatal problem can be avoided.
- the heat transfer function of the stress relaxation layer 45 may be lowered by providing the slits 461 and 462, the slits 461 and 462 are not provided under the semiconductor element 10 that is a heating element. That is, the stress relaxation layer 45 exists without a gap in the element region 45X where heat transfer is most required. Therefore, the effect on heat dissipation is small.
- the stress relaxation layer 45 of this form is divided
- the size of the individual pieces may be adjusted depending on the arrangement of the semiconductor elements 10.
- three slits 463, 464, 465 are provided in the stress relaxation layer, only the slit 463 crosses the stress relaxation layer, and the other slits 464, 465 position the semiconductor element 10. Arranged to avoid.
- the stress relaxation layer is divided into individual pieces 450A, 450B, 450C, and 450D, and the sizes of the individual pieces are different.
- the slits in the stress relaxation layer do not hinder the design freedom of the arrangement of the semiconductor element 10. That is, the size of the individual piece can be adjusted within a range in which the stress strain due to the difference in linear expansion coefficient between aluminum and ceramic does not exceed the strength of the ceramic substrate 20 (for example, 20 mm square with a thickness of 1 mm).
- two semiconductor elements 11 and 12 are arranged in one piece, but a slit is also provided between the semiconductor elements 11 and 12 so that one piece of semiconductor element is formed in one piece. Good. Further, three or more semiconductor elements may be arranged on one piece as long as the stress strain can be absorbed.
- the stress relaxation layer 45 is divided into four pieces 45A, 45B, 45C, and 45D by the slits 461 and 462. That is, even if the overall size of the stress relaxation layer 45 is large, the size is small when attention is paid to the individual pieces 45A, 45B, 45C, and 45D. Therefore, even if there is a difference in expansion and contraction between the cooling member and the insulating substrate due to temperature changes during reliability evaluation such as cooling cycles and when used in the market, the stress strain borne by each piece is small. . Therefore, the stress strain can be reliably absorbed, cracks and warpage of the ceramic substrate 20 and the bonding material are prevented, and high reliability is ensured.
- the slits 461 and 462 are located in the non-element region 45Y. That is, the slits 461 and 462 are not arranged in the element region 45X, and the influence on the heat transfer path is small. Therefore, high thermal conductivity is ensured. Therefore, a semiconductor module that achieves both improvement of the stress relaxation effect and ensuring high thermal conductivity has been realized.
- the stress relaxation layer 45 contributes to the enlargement of the ceramic substrate 20 and the resulting compact power module.
- this embodiment is merely an example, and does not limit the present invention. Therefore, the present invention can naturally be improved and modified in various ways without departing from the gist thereof.
- a slit is provided as a stress absorption space in the stress relaxation layer of the present embodiment, a through hole may be provided in combination with the slit. Thereby, the stress relaxation effect can be further exhibited for each divided region.
- the member that dissipates heat from the semiconductor element is not limited to the cooler having the refrigerant flow path.
- a heat radiating plate using a metal plate made of an inexpensive material having high thermal conductivity (aluminum, copper, etc.) may be used.
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Abstract
Description
Claims (4)
- 冷却部材と,
複数の半導体素子が配される絶縁基板と,
一方の面を前記絶縁基板と接合し,他方の面を前記冷却部材と接合し,伝熱機能と応力緩和機能とを兼ねる応力緩和層とを有し,
前記応力緩和層には,当該応力緩和層を複数の個片部に分離する少なくとも1つのスリットが設けられ,
前記スリットは,前記応力緩和層の面内中,前記応力緩和層の厚さ方向から見て,前記半導体素子の投影領域以外の領域である非半導体素子領域内に位置することを特徴とする半導体モジュール。 - 請求の範囲第1項に記載する半導体モジュールにおいて,
前記スリットのうち少なくとも1つは,半導体素子間に位置することを特徴とする半導体モジュール。 - 請求の範囲第1項または第2項に記載する半導体モジュールにおいて,
前記スリットのうち少なくとも1つは,前記応力緩和層を横断することを特徴とする半導体モジュール。 - 請求の範囲第1項から第3項のいずれか1つに記載する半導体モジュールにおいて,
前記応力緩和層の各個片部のサイズは,半導体素子の配置に合わせて異なることを特徴とする半導体モジュール。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/810,135 US20100264520A1 (en) | 2007-12-25 | 2008-11-28 | Semiconductor module |
CN2008801199922A CN101897022B (zh) | 2007-12-25 | 2008-11-28 | 半导体模块 |
EP08865477A EP2224484A4 (en) | 2007-12-25 | 2008-11-28 | SEMICONDUCTOR MODULE |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-331353 | 2007-12-25 | ||
JP2007331353A JP4832419B2 (ja) | 2007-12-25 | 2007-12-25 | 半導体モジュール |
Publications (1)
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WO2009081689A1 true WO2009081689A1 (ja) | 2009-07-02 |
Family
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PCT/JP2008/071605 WO2009081689A1 (ja) | 2007-12-25 | 2008-11-28 | 半導体モジュール |
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Country | Link |
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US (1) | US20100264520A1 (ja) |
EP (1) | EP2224484A4 (ja) |
JP (1) | JP4832419B2 (ja) |
KR (1) | KR101097571B1 (ja) |
CN (1) | CN101897022B (ja) |
WO (1) | WO2009081689A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102237354A (zh) * | 2010-04-28 | 2011-11-09 | 本田技研工业株式会社 | 电路基板 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102012208767A1 (de) * | 2011-06-17 | 2012-12-20 | Robert Bosch Gmbh | Elektronische Schaltungsanordnung mit Verlustwärme abgebenden Komponenten |
JP5548722B2 (ja) | 2012-03-30 | 2014-07-16 | 三菱マテリアル株式会社 | ヒートシンク付パワーモジュール用基板、及び、ヒートシンク付パワーモジュール用基板の製造方法 |
CN102738138A (zh) * | 2012-06-05 | 2012-10-17 | 嘉兴斯达微电子有限公司 | 一种针对电动汽车应用的igbt功率模块 |
JP6154248B2 (ja) * | 2012-08-24 | 2017-06-28 | 京セラ株式会社 | 流路部材およびこれを用いた熱交換器ならびに半導体製造装置 |
JP2014093365A (ja) * | 2012-11-01 | 2014-05-19 | Toyota Industries Corp | 半導体装置 |
JP6232697B2 (ja) * | 2012-11-08 | 2017-11-22 | ダイキン工業株式会社 | パワーモジュール |
DE102014101926A1 (de) * | 2014-02-17 | 2015-05-07 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul |
US9449867B2 (en) * | 2014-06-17 | 2016-09-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | VHF etch barrier for semiconductor integrated microsystem |
JP1528485S (ja) * | 2015-01-14 | 2015-07-13 | ||
JP1528936S (ja) * | 2015-01-14 | 2015-07-13 | ||
JP1528484S (ja) * | 2015-01-14 | 2015-07-13 | ||
JP2019079958A (ja) * | 2017-10-25 | 2019-05-23 | 株式会社豊田中央研究所 | パワーモジュール |
JP7159620B2 (ja) * | 2018-05-30 | 2022-10-25 | 富士電機株式会社 | 半導体装置、冷却モジュール、電力変換装置及び電動車両 |
JP7147610B2 (ja) * | 2019-02-12 | 2022-10-05 | 三菱マテリアル株式会社 | 絶縁回路基板及びその製造方法 |
US11388839B2 (en) * | 2020-08-14 | 2022-07-12 | Toyota Motor Engineering & Manufacturing North America, Inc. | Power electronics cooling assemblies and methods for making the same |
WO2022097792A1 (ko) * | 2020-11-04 | 2022-05-12 | 주식회사 리빙케어 | 대용량 열전모듈 |
DE102022208583A1 (de) | 2022-08-18 | 2023-08-03 | Zf Friedrichshafen Ag | Leistungshalbleitermodul mit innerem kühlkanal |
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JPH088372A (ja) * | 1994-06-23 | 1996-01-12 | Toshiba Corp | 放熱装置 |
JPH08274228A (ja) * | 1995-03-29 | 1996-10-18 | Origin Electric Co Ltd | 半導体搭載基板、電力用半導体装置及び電子回路装置 |
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DE69034139T2 (de) * | 1989-10-09 | 2004-11-25 | Mitsubishi Materials Corp. | Keramiksubstrat zur Herstellung elektrischer oder elektronischer Schaltungen |
JPH083372A (ja) * | 1994-06-17 | 1996-01-09 | Ube Ind Ltd | 大型車両用タイヤ |
JP2002343911A (ja) * | 2001-05-16 | 2002-11-29 | Hitachi Metals Ltd | 基 板 |
JP3793562B2 (ja) * | 2001-09-27 | 2006-07-05 | 京セラ株式会社 | セラミック回路基板 |
JP2003163315A (ja) * | 2001-11-29 | 2003-06-06 | Denki Kagaku Kogyo Kk | モジュール |
JP2006165409A (ja) * | 2004-12-10 | 2006-06-22 | Hitachi Ltd | 電力変換装置 |
JP4621531B2 (ja) * | 2005-04-06 | 2011-01-26 | 株式会社豊田自動織機 | 放熱装置 |
DE102006011995B3 (de) * | 2006-03-16 | 2007-11-08 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit segmentierter Grundplatte |
-
2007
- 2007-12-25 JP JP2007331353A patent/JP4832419B2/ja not_active Expired - Fee Related
-
2008
- 2008-11-28 CN CN2008801199922A patent/CN101897022B/zh not_active Expired - Fee Related
- 2008-11-28 EP EP08865477A patent/EP2224484A4/en not_active Withdrawn
- 2008-11-28 WO PCT/JP2008/071605 patent/WO2009081689A1/ja active Application Filing
- 2008-11-28 US US12/810,135 patent/US20100264520A1/en not_active Abandoned
- 2008-11-28 KR KR1020107013942A patent/KR101097571B1/ko not_active IP Right Cessation
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JPH088372A (ja) * | 1994-06-23 | 1996-01-12 | Toshiba Corp | 放熱装置 |
JPH08274228A (ja) * | 1995-03-29 | 1996-10-18 | Origin Electric Co Ltd | 半導体搭載基板、電力用半導体装置及び電子回路装置 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102237354A (zh) * | 2010-04-28 | 2011-11-09 | 本田技研工业株式会社 | 电路基板 |
US8659900B2 (en) | 2010-04-28 | 2014-02-25 | Honda Motor Co., Ltd. | Circuit board including a heat radiating plate |
CN102237354B (zh) * | 2010-04-28 | 2014-08-13 | 本田技研工业株式会社 | 电路基板 |
Also Published As
Publication number | Publication date |
---|---|
JP4832419B2 (ja) | 2011-12-07 |
CN101897022B (zh) | 2013-04-17 |
JP2009158502A (ja) | 2009-07-16 |
EP2224484A1 (en) | 2010-09-01 |
US20100264520A1 (en) | 2010-10-21 |
KR20100085191A (ko) | 2010-07-28 |
CN101897022A (zh) | 2010-11-24 |
EP2224484A4 (en) | 2012-05-30 |
KR101097571B1 (ko) | 2011-12-22 |
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