JP4832419B2 - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
- Publication number
- JP4832419B2 JP4832419B2 JP2007331353A JP2007331353A JP4832419B2 JP 4832419 B2 JP4832419 B2 JP 4832419B2 JP 2007331353 A JP2007331353 A JP 2007331353A JP 2007331353 A JP2007331353 A JP 2007331353A JP 4832419 B2 JP4832419 B2 JP 4832419B2
- Authority
- JP
- Japan
- Prior art keywords
- stress relaxation
- relaxation layer
- semiconductor
- semiconductor element
- ceramic substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Description
20 セラミック基板(絶縁基板)
21 パターン層
30 冷却器(冷却部材)
45 応力緩和層
45A,45B,45C,45D 個片部
45X 素子領域(半導体素子の投影領域)
45Y 非素子領域(非半導体素子領域)
461,462 スリット
100 パワーモジュール(半導体モジュール)
Claims (4)
- 冷却部材と,
複数の半導体素子が配される絶縁基板と,
一方の面を前記絶縁基板と接合し,他方の面を前記冷却部材と接合し,伝熱機能と応力緩和機能とを兼ねる応力緩和層とを有し,
前記応力緩和層には,当該応力緩和層を複数の個片部に分離する少なくとも1つのスリットが設けられ,
前記スリットは,前記応力緩和層の面内中,前記応力緩和層の厚さ方向から見て,前記半導体素子の投影領域以外の領域である非半導体素子領域内に位置し,前記応力緩和層を半導体素子単位で個片化し,前記半導体素子の投影領域である半導体素子領域には配置されていないことを特徴とする半導体モジュール。 - 請求項1に記載する半導体モジュールにおいて,
前記スリットのうち少なくとも1つは,半導体素子間に位置することを特徴とする半導体モジュール。 - 請求項1または請求項2に記載する半導体モジュールにおいて,
前記スリットのうち少なくとも1つは,前記応力緩和層を横断することを特徴とする半導体モジュール。 - 請求項1から請求項3のいずれか1つに記載する半導体モジュールにおいて,
前記応力緩和層の各個片部のサイズは,半導体素子の配置に合わせて異なることを特徴とする半導体モジュール。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007331353A JP4832419B2 (ja) | 2007-12-25 | 2007-12-25 | 半導体モジュール |
PCT/JP2008/071605 WO2009081689A1 (ja) | 2007-12-25 | 2008-11-28 | 半導体モジュール |
US12/810,135 US20100264520A1 (en) | 2007-12-25 | 2008-11-28 | Semiconductor module |
KR1020107013942A KR101097571B1 (ko) | 2007-12-25 | 2008-11-28 | 반도체 모듈 |
CN2008801199922A CN101897022B (zh) | 2007-12-25 | 2008-11-28 | 半导体模块 |
EP08865477A EP2224484A4 (en) | 2007-12-25 | 2008-11-28 | SEMICONDUCTOR MODULE |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007331353A JP4832419B2 (ja) | 2007-12-25 | 2007-12-25 | 半導体モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009158502A JP2009158502A (ja) | 2009-07-16 |
JP4832419B2 true JP4832419B2 (ja) | 2011-12-07 |
Family
ID=40801001
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007331353A Expired - Fee Related JP4832419B2 (ja) | 2007-12-25 | 2007-12-25 | 半導体モジュール |
Country Status (6)
Country | Link |
---|---|
US (1) | US20100264520A1 (ja) |
EP (1) | EP2224484A4 (ja) |
JP (1) | JP4832419B2 (ja) |
KR (1) | KR101097571B1 (ja) |
CN (1) | CN101897022B (ja) |
WO (1) | WO2009081689A1 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5512377B2 (ja) * | 2010-04-28 | 2014-06-04 | 本田技研工業株式会社 | 回路基板 |
DE102012208767A1 (de) * | 2011-06-17 | 2012-12-20 | Robert Bosch Gmbh | Elektronische Schaltungsanordnung mit Verlustwärme abgebenden Komponenten |
JP5548722B2 (ja) * | 2012-03-30 | 2014-07-16 | 三菱マテリアル株式会社 | ヒートシンク付パワーモジュール用基板、及び、ヒートシンク付パワーモジュール用基板の製造方法 |
CN102738138A (zh) * | 2012-06-05 | 2012-10-17 | 嘉兴斯达微电子有限公司 | 一种针对电动汽车应用的igbt功率模块 |
JP6154248B2 (ja) * | 2012-08-24 | 2017-06-28 | 京セラ株式会社 | 流路部材およびこれを用いた熱交換器ならびに半導体製造装置 |
JP2014093365A (ja) * | 2012-11-01 | 2014-05-19 | Toyota Industries Corp | 半導体装置 |
JP6232697B2 (ja) * | 2012-11-08 | 2017-11-22 | ダイキン工業株式会社 | パワーモジュール |
DE102014101926A1 (de) * | 2014-02-17 | 2015-05-07 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul |
US9449867B2 (en) * | 2014-06-17 | 2016-09-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | VHF etch barrier for semiconductor integrated microsystem |
JP1528485S (ja) * | 2015-01-14 | 2015-07-13 | ||
JP1528484S (ja) * | 2015-01-14 | 2015-07-13 | ||
JP1528936S (ja) * | 2015-01-14 | 2015-07-13 | ||
JP2019079958A (ja) * | 2017-10-25 | 2019-05-23 | 株式会社豊田中央研究所 | パワーモジュール |
JP7159620B2 (ja) * | 2018-05-30 | 2022-10-25 | 富士電機株式会社 | 半導体装置、冷却モジュール、電力変換装置及び電動車両 |
JP7147610B2 (ja) * | 2019-02-12 | 2022-10-05 | 三菱マテリアル株式会社 | 絶縁回路基板及びその製造方法 |
US11388839B2 (en) * | 2020-08-14 | 2022-07-12 | Toyota Motor Engineering & Manufacturing North America, Inc. | Power electronics cooling assemblies and methods for making the same |
WO2022097792A1 (ko) * | 2020-11-04 | 2022-05-12 | 주식회사 리빙케어 | 대용량 열전모듈 |
DE102022208583A1 (de) | 2022-08-18 | 2023-08-03 | Zf Friedrichshafen Ag | Leistungshalbleitermodul mit innerem kühlkanal |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0173782B1 (ko) * | 1989-10-09 | 1999-02-01 | 나가노 다께시 | 전기 또는 전자회로의 성형에 사용되는 세라믹기판 |
JPH083372A (ja) * | 1994-06-17 | 1996-01-09 | Ube Ind Ltd | 大型車両用タイヤ |
JPH088372A (ja) * | 1994-06-23 | 1996-01-12 | Toshiba Corp | 放熱装置 |
JPH08274228A (ja) * | 1995-03-29 | 1996-10-18 | Origin Electric Co Ltd | 半導体搭載基板、電力用半導体装置及び電子回路装置 |
JP2002343911A (ja) * | 2001-05-16 | 2002-11-29 | Hitachi Metals Ltd | 基 板 |
JP3793562B2 (ja) * | 2001-09-27 | 2006-07-05 | 京セラ株式会社 | セラミック回路基板 |
JP2003163315A (ja) * | 2001-11-29 | 2003-06-06 | Denki Kagaku Kogyo Kk | モジュール |
JP2006165409A (ja) * | 2004-12-10 | 2006-06-22 | Hitachi Ltd | 電力変換装置 |
JP4621531B2 (ja) * | 2005-04-06 | 2011-01-26 | 株式会社豊田自動織機 | 放熱装置 |
DE102006011995B3 (de) * | 2006-03-16 | 2007-11-08 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit segmentierter Grundplatte |
-
2007
- 2007-12-25 JP JP2007331353A patent/JP4832419B2/ja not_active Expired - Fee Related
-
2008
- 2008-11-28 US US12/810,135 patent/US20100264520A1/en not_active Abandoned
- 2008-11-28 KR KR1020107013942A patent/KR101097571B1/ko not_active IP Right Cessation
- 2008-11-28 EP EP08865477A patent/EP2224484A4/en not_active Withdrawn
- 2008-11-28 CN CN2008801199922A patent/CN101897022B/zh not_active Expired - Fee Related
- 2008-11-28 WO PCT/JP2008/071605 patent/WO2009081689A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
CN101897022B (zh) | 2013-04-17 |
EP2224484A4 (en) | 2012-05-30 |
CN101897022A (zh) | 2010-11-24 |
US20100264520A1 (en) | 2010-10-21 |
KR101097571B1 (ko) | 2011-12-22 |
JP2009158502A (ja) | 2009-07-16 |
KR20100085191A (ko) | 2010-07-28 |
WO2009081689A1 (ja) | 2009-07-02 |
EP2224484A1 (en) | 2010-09-01 |
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