WO2009080573A3 - Monolithisch integrierter antennen- und empfängerschaltkreis für die erfassung von terahertz-wellen - Google Patents

Monolithisch integrierter antennen- und empfängerschaltkreis für die erfassung von terahertz-wellen Download PDF

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Publication number
WO2009080573A3
WO2009080573A3 PCT/EP2008/067471 EP2008067471W WO2009080573A3 WO 2009080573 A3 WO2009080573 A3 WO 2009080573A3 EP 2008067471 W EP2008067471 W EP 2008067471W WO 2009080573 A3 WO2009080573 A3 WO 2009080573A3
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WO
WIPO (PCT)
Prior art keywords
field effect
effect transistor
gate
antenna structure
detection
Prior art date
Application number
PCT/EP2008/067471
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English (en)
French (fr)
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WO2009080573A2 (de
Inventor
Erik ÖJEFORS
Peter HARING BOLÍVAR
Hartmut Roskos
Ullrich Pfeiffer
Original Assignee
Johann Wolfgang Goethe-Universität Frankfurt A. M.
Universität Siegen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Johann Wolfgang Goethe-Universität Frankfurt A. M., Universität Siegen filed Critical Johann Wolfgang Goethe-Universität Frankfurt A. M.
Priority to JP2010538611A priority Critical patent/JP5401469B2/ja
Priority to EP08865626A priority patent/EP2229695A2/de
Priority to CA2710450A priority patent/CA2710450C/en
Priority to US12/810,031 priority patent/US8330111B2/en
Publication of WO2009080573A2 publication Critical patent/WO2009080573A2/de
Publication of WO2009080573A3 publication Critical patent/WO2009080573A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/16—Resonant antennas with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole
    • H01Q9/28—Conical, cylindrical, cage, strip, gauze, or like elements having an extended radiating surface; Elements comprising two conical surfaces having collinear axes and adjacent apices and fed by two-conductor transmission lines
    • H01Q9/285—Planar dipole
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45278—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using BiFET transistors as the active amplifying circuit
    • H03F3/45282—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45024—Indexing scheme relating to differential amplifiers the differential amplifier amplifying transistors are cascode coupled transistors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Details Of Aerials (AREA)
  • Amplifiers (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Radar Systems Or Details Thereof (AREA)

Abstract

Die vorliegende Erfindung betrifft eine Vorrichtung zur Erfassung von Millimeterwellen mit mindestens einem Feldeffekttransistor, der eine Source, einen Drain, ein Gate, einen Gate-Source-Kontakt, einen Source-Drain-Kanal und einen Gate-Drain-Kontakt aufweist. Gegenüber einer solchen Vorrichtung liegt der vorliegenden Erfindung unter anderem die Aufgabe zugrunde, eine Vorrichtung bereitzustellen, welche es ermöglicht, einen Feldeffekttransistor zur Erfassung der Leistung und/oder der Phase elektromagnetischer Strahlung im THz-Frequenzbereich bereitzustellen. Um eine solche Vorrichtung zu schaffen, wird erfindungsgemäß vorgeschlagen, eine Vorrichtung bereitzustellen, die eine Antennenstruktur aufweist, wobei der Feldeffekttransistor so mit der Antennenstruktur verbunden ist, daß ein von der Antennenstruktur empfangenes elektromagnetisches Signal im THz-Frequenzbereich über den Gate-Source-Kontakt in den Feldeffekttransistors eingespeist wird und wobei der Feldeffekttransistor und die Antennenstruktur zusammen auf einem einzigen Substrat angeordnet sind.
PCT/EP2008/067471 2007-12-22 2008-12-12 Monolithisch integrierter antennen- und empfängerschaltkreis für die erfassung von terahertz-wellen WO2009080573A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010538611A JP5401469B2 (ja) 2007-12-22 2008-12-12 テラヘルツ波を検出するためのモノリシック集積アンテナおよび受信器回路
EP08865626A EP2229695A2 (de) 2007-12-22 2008-12-12 Monolithisch integrierter antennen- und empfängerschaltkreis für die erfassung von terahertz-wellen
CA2710450A CA2710450C (en) 2007-12-22 2008-12-12 Monolithically integrated antenna and receiver circuit for the detection of terahertz waves
US12/810,031 US8330111B2 (en) 2007-12-22 2008-12-12 Monolithically integrated antenna and receiver circuit for the detection of terahertz waves

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007062562A DE102007062562B4 (de) 2007-12-22 2007-12-22 Monolithisch integrierter Antennen- und Empfängerschaltkreis für die Erfassung von Terahertz-Wellen
DE102007062562.8 2007-12-22

Publications (2)

Publication Number Publication Date
WO2009080573A2 WO2009080573A2 (de) 2009-07-02
WO2009080573A3 true WO2009080573A3 (de) 2009-11-19

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Country Status (6)

Country Link
US (1) US8330111B2 (de)
EP (1) EP2229695A2 (de)
JP (1) JP5401469B2 (de)
CA (1) CA2710450C (de)
DE (1) DE102007062562B4 (de)
WO (1) WO2009080573A2 (de)

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Also Published As

Publication number Publication date
EP2229695A2 (de) 2010-09-22
CA2710450C (en) 2016-04-12
US20110001173A1 (en) 2011-01-06
JP2011509518A (ja) 2011-03-24
DE102007062562A1 (de) 2009-07-02
JP5401469B2 (ja) 2014-01-29
CA2710450A1 (en) 2009-07-02
DE102007062562B4 (de) 2009-10-01
WO2009080573A2 (de) 2009-07-02
US8330111B2 (en) 2012-12-11

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