Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/85—Packages
  • H10H20/858—Means for heat extraction or cooling
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/0001—Technical content checked by a classifier
  • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
  • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/85—Packages
  • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/85—Packages
  • H10H20/858—Means for heat extraction or cooling
  • H10H20/8581—Means for heat extraction or cooling characterised by their material
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/85—Packages
  • H10H20/858—Means for heat extraction or cooling
  • H10H20/8585—Means for heat extraction or cooling being an interconnection

Definitions

• the published patent application DE 100 40 448 A1 describes a semiconductor chip and a method for producing semiconductor chips using thin-film technology.
• a layer composite of an active layer sequence and a base layer is arranged.
• a reinforcing layer and a subcarrier layer are added to the layer composite, which are applied by electroplating to the base layer before the substrate is peeled off.
• a film is laminated to handle the semiconductor chips formed from the layer composite.
• the task that the. Invention is based, is to provide an optoelectronic device that is used as efficiently as possible.
• the object is solved by features of the independent claim.
• Advantageous embodiments of the invention are characterized in the subclaims.
• the invention is characterized by an optoelectronic component having at least one metal body and a layer sequence which is applied to a base body and which is designed to emit electromagnetic radiation and in which insulation is applied to at least one side surface, wherein the at least one Metal body is applied to at least a portion of the insulation and is formed so that it is in heat-conducting contact with the base body.
• the main body is provided for applying the layer sequences which emit the electromagnetic radiation when exposed to the current.
• One or more layer sequences can be arranged on the base body.
• the main body is typically designed as a heat sink and is particularly suitable for dissipating the heat generated during operation of the optoelectronic component, so that the respective optoelectronic component can be operated particularly efficiently. So that the heat can be diverted particularly well to the main body, this includes optoelectronic component at least one metal body which is in heat-conducting contact with the base body.
• insulation is applied to at least one side surface of the layer sequence, which is preferably designed to be electrically insulating and protects the layer sequence against contamination, for example, during a unification of the optoelectronic components.
• the metal body may be associated with one or more side surfaces of the optoelectronic component.
• the insulation is formed as an insulating layer or as an insulating layer sequence.
• an electrical insulation between the metal body and the layer sequence can be ensured particularly reliably. Furthermore, secure protection against contamination of the layer sequence can be ensured by means of the insulation layer or by means of the insulation layer sequence.
• the insulation layer or the insulation layer sequence has a passivation layer and / or at least one air layer.
• the insulating layer or insulation layer sequence formed as a passivation layer is preferably designed to be electrically insulating, so that by means of the metal body - A -
• the passivation layer protects the layer sequence against contamination, for example during a unification of the optoelectronic components.
• the air layer can be arranged between the passivation layer and the layer sequence and / or between the passivation layer and the metal body, so that the metal body is electrically insulated from the layer sequence, so that short circuits can be safely avoided.
• the metal body is formed as a metal mask.
• the metal mask is designed such that it has a recess for the respective layer sequence of the optoelectronic component, so that the metal body formed as a metal mask may comprise the layer sequence.
• the metal mask is formed as an annular metal body. In this way, it can be applied, for example, to the insulation of the respective side surface of the layer sequence formed as an insulation layer or insulation layer sequence, so that the heat generated in the layer sequence can be dissipated particularly well to the base body.
• the metal mask may preferably have a plurality of recesses for a combination of layer sequences and thus be simultaneously applied to the composite of layer sequences, so that the respective optoelectronic components can be produced particularly inexpensively.
• the metal body is produced by means of a galvanic process.
• the metal body can be particularly suitably applied to the respective insulation of the layer sequence, so that the metal body is in heat-conducting contact with the main body.
• the heat generated by the operation of the optoelectronic component can be dissipated well and thus the optoelectronic component can be operated particularly efficiently.
• a current distribution structure is applied to at least one region of the surface of the layer sequence facing away from the base body.
• the current distribution structure typically represents an electrical coupling to the layer sequence of the optoelectronic component.
• the current distribution structure can be applied to the surface of the layer sequence facing away from the base body, for example by means of a photolithographic process and / or galvanic process.
• the power distribution structure is such applied over the respective surface of the layer sequence, such as in a square or rectangular structure that a supplied during operation of the 'optoelectronic component stream can be particularly homogeneously incorporated in the layer sequence, so that the optoelectronic component is operated particularly efficiently can be.
• remote surface of the layer sequence is particularly suitable for large-area optoelectronic components for high current applications.
• the at least one metal body is in an electrically conductive manner with the current distribution structure and with an electrical connection region for electrically contacting the optoelectronic component in contact.
• the optoelectronic component can be produced in a particularly cost-effective manner.
• the electrical connection region which is coupled to the current distribution structure on the surface of the layer sequence by means of the metal body, constitutes a second electrical connection region of the optoelectronic component.
• a first electrical connection region is typically assigned to the surface of the layer sequence facing the base surface.
• the respective insulation is preferably designed such that it is arranged electrically insulating between the first and second electrical connection region, so that a short circuit is avoided.
• the base body is designed as a ceramic body, as a passivated silicon body or as a passivated metallic body.
• Such a design of the base body is particularly suitable as a heat sink and thus for deriving the heat generated during operation of the optoelectronic component.
• the produced optoelectronic component comprising the base body designed as a heat sink can be arranged in preferred applications such that the base body is coupled to other bodies of suitable thermally conductive material, so that the optoelectronic component can be operated particularly efficiently.
• electrically conductive base bodies are coated by means of a passivation layer, which is suitably thermally conductive, onto which the layer sequence and / or the electrical connection regions can be applied.
• the at least one metal body has at least one of the components Au, Ag or Ni.
• Such materials are particularly suitable for dissipating heat and at the same time as an electrical conductor.
• the optoelectronic component With a suitable coupling of the metal body with the base body, the optoelectronic component can be produced in a particularly cost-effective manner and operated particularly efficiently.
• the at least one metal body is designed as a reflector for reflecting the electromagnetic radiation in a predetermined emission direction.
• the metal body may be formed as a housing of the layer sequence such that by means of its edges, a reflection of the emitted electromagnetic radiation in a predetermined emission direction can be ensured.
• the emission characteristic of the optoelectronic component can be influenced particularly advantageously.
• Such a designed optoelectronic component is characterized by a cost-effective production and high efficiency.
• the optoelectronic component has a converter layer with at least one phosphor which is applied to at least one region of the surface of the layer sequence facing away from the base body and in which the at least one metal body is in heat-conducting contact.
• the converter layer is typically formed as a luminescence conversion layer with at least one phosphor.
• the phosphor can be excited by the electromagnetic radiation emitted by the optoelectronic component, which can also be referred to as electromagnetic primary radiation, and emits secondary radiation.
• the primary radiation and the secondary radiation have different wavelength ranges.
• a desired resulting color locus of the optoelectronic component can be adjusted, for example, by adjusting a mixing ratio of the primary radiation and the secondary radiation.
• the converter layer comprises at least one of the group consisting of silicones, siloxanes, spin-on oxides, and photopatternable materials.
• the at least one phosphor is, for example, as an organic phosphor and / or is partially present as nanoparticles.
• the phosphors can be heated very strongly due to the excitation by the primary radiation, in particular in a UV primary radiation and thus greatly heat the converter layer. Due to the heat-conductive coupling of the metal body with such a converter layer, the heat generated in the converter layer can be dissipated particularly well on the formed as a heat sink body and thus the optoelectronic device can be operated very efficiently. Furthermore, a FarbortSchwankung be prevented and thus the radiation characteristic of the optoelectronic component are particularly advantageous influenced.
• FIG. 1 shows schematic sectional views of an optoelectronic component
• FIG. 3 shows a schematic plan view of an optoelectronic component
• FIG. 4 shows a further schematic sectional view of an optoelectronic component with metal mask
• Figure 5 is a schematic representation of a composite of a plurality of optoelectronic devices.
• the same or equivalent components are each provided with the same reference numerals.
• the components shown and the size ratios of the components with each other are not to be considered as true to scale. Rather, some details of the figures are exaggerated for clarity.
• FIG. 1 shows an optoelectronic component 10 which is designed, for example, as a light-emitting diode.
• the optoelectronic component 10 comprises a base body 11, which is formed, for example, as a ceramic body or as a passivated metallic body or as a passivated silicon body.
• the main body 11 is preferred as a heat sink with low
• the main body is a film.
• the main body 11 serves as a carrier for a layer sequence 17, which is designed to emit electromagnetic radiation upon application of electrical current.
• the layer sequence 17 is formed for example as a thin-film layer.
• the thin film layer for example is based on nitride compound semiconductor materials, and has at least 'an active region, which is suitable for emitting electromagnetic radiation.
• the electromagnetic radiation has, for example, wavelengths from the blue and / or ultraviolet spectrum.
• the layer sequence 17 is typically grown on a separate AufwachsSubstrat, followed by this detached and on the Base body 11 has been applied.
• the detachment can take place by means of a laser stripping method, as is known, for example, from WO 98/14986, the content of which is hereby incorporated in this regard.
• the delamination can be done by etching or other suitable lift-off method.
• Nitride compound semiconductor materials are compound semiconductor materials containing nitrogen, such as materials of the system In x Al y Ga 1 -x - y N where O ⁇ x ⁇ l, 0 ⁇ y ⁇ 1 and x + y ⁇ 1.
• the thin-film layer has For example, at least one semiconductor layer of a nitride compound semiconductor material.
• a conventional pn junction, a double heterostructure, a single quantum well structure (SQW structure) or a multiple quantum well structure (MQW structure) may be included.
• SQW structure single quantum well structure
• MQW structure multiple quantum well structure
• the layer sequence 17 has on its side surfaces an insulating layer 12 formed as an insulation layer, which is formed for example as a passivation layer and as a component, for example, SiO 2 . Furthermore, the insulation 12 may be formed as a coating layer applied to the layer sequence 17.
• the insulation 12 preferably has electrically insulating properties, ie a particularly high electrical resistance.
• the insulation 12 formed as a passivation layer can be in direct contact with the side surfaces of the layer sequence 17.
• the layer sequence 17 at the Side surfaces have formed as an insulation layer sequence insulation 12. This can have, in addition to the passivation layer, at least one further layer, for example an air layer and / or a lacquer layer, which is arranged, for example, between the side surfaces of the layer sequence 17 and the passivation layer.
• a reflective electrical contact structure 18 is arranged, which is electrically coupled to a first electrical connection region 13.
• the first electrical connection region 13 is applied to the base body 11 on a further insulation layer 12, which is formed, for example, as a passivation layer. However, the first electrical connection region 13 can also be applied to the base body 11 without further insulation 12.
• the layer sequence 17 is by means of the reflective electrical contact structure. 18 soldered or glued to the base body 11, wherein the base body 11 is preferably formed electrically insulating, i. has a particularly high electrical resistance. Alternatively, however, the layer sequence 17 can also be applied to it by means of an electrically insulating solder or a passivation layer between the reflective electrical contact structure 18 and the base body 11. r
• a power distribution structure fourteenth applied is typically metallic, for example of Au or Ag, formed on the surface of the layer sequence 17.
• This is typically metallic, for example of Au or Ag, formed on the surface of the layer sequence 17.
• the contact webs form the outlines of several rectangles or squares.
• the plurality of rectangles or squares each at least. a common side edge (not shown in Figure 1), more preferably even two common side edges, on.
• the contact webs may form the outline of a plurality of squares and / or rectangles, each having a common corner point.
• the current distribution structure 14 is designed, when exposed to a current, to introduce it homogeneously into the layer sequence 17 in order to ensure the most homogeneous possible current distribution in the layer sequence 17.
• a particularly homogeneous emission characteristic of the respective optoelectronic component 10 can be achieved, in particular if it is formed over a particularly large area, for example> 1 mm 2 .
• a second electrical connection region 16 which is electrically coupled to the current distribution structure 14 by means of a metal body 15, is applied to the base body 11.
• the metal body 15 is applied to at least one region of the insulation 12 of the layer sequence 17 and has, for example, one
• the metal body 15 can also be applied to at least one region of an insulation 12 formed as an insulation layer sequence, which may comprise, for example, a Has passivation layer and an air layer.
• the metal body 15 is applied to the second connection region 16 and / or the insulation 12, for example by means of a galvanic process. In principle, however, other methods known to a person skilled in the art for applying the metal body 15 can also be used.
• the metal body 15 can be directly on at least one area of the
• Passivation layer formed insulation 12 may be applied. Between the metal body 15 and the passivation layer, however, a further layer can also be arranged at least in regions, e.g. an air layer.
• the metal body 15 typically contains constituents of Au, Ag, or Ni and is thus characterized by a low thermal resistance, and a low electrical resistance.
• the metal body 15 is thermally conductively coupled to the base body 11 by means of the second connection region 16.
• the first and second electrical connection regions 13 and 16 are either printed or applied over the entire surface using a template and subsequently patterned in the desired manner by means of photolithography.
• the first and second terminal regions 13 and 16 are formed of a metal or a metal compound,
• the first and second terminal regions 13 and 16 include Au or Ag.
• the heat generated during operation of the optoelectronic component 10 can be diverted perpendicularly to the layer sequence 17 into the base body 11 and additionally be led laterally to the layer sequence 17 into the base body 11 by means of the metal body 15 (see arrows 19).
• the metal body 15 depending be formed by the respective requirement of the heat dissipation of the optoelectronic component 10 more or less bulky.
• Optoelectronic components 10 for high current applications for example, have the edge length of 1 mm and at a supply voltage of 3 V to 4 V, for example, a current of 1 A to operate, the metal body 15 is particularly large volume and large area coupled to the second terminal portion 16 to the heat dissipated particularly efficiently to the body 11.
• the reflective electrical contact structure 18 and the second electrical connection region 16 are electrically insulated from one another by means of the insulation 12, so that a short circuit between the two connection regions can be avoided.
• the optoelectronic component 10 can also be designed such that the current distribution structure 14 is not coupled to the second electrical connection region 16 by means of the metal body 15.
• the metal body 15 is typically used only for heat dissipation and can thus be applied directly to the base body 11, so that a particularly high heat dissipation is ensured.
• FIG. 2A shows a further exemplary embodiment of an optoelectronic component 10 with a metal body 15 which surrounds all four side surfaces of the layer sequence 17 as a metal border (only the left and right side surfaces are shown in FIG. 2A), wherein the metal body 15 is not electrically coupled with the power distribution structure 14 on the base body 11th
• the power distribution structure 14 by means of bonding wire with the second electrical connection portion 16 may be electrically coupled (not shown), the bonding wire, for example, a corner of at least one rectangle or square whose outline is formed by the contact webs assigned.
• the bonding wire can be assigned to a common corner point of several squares and / or rectangles.
• the efficiency of the lateral heat dissipation in the base body 11 can be increased, it being important to ensure that the metal body 15 is not simultaneously electrically coupled to the first and second electrical connection area 13 and 16.
• the optoelectronic component 10 is further characterized in that it comprises a converter layer 20a designed as a luminescence conversion layer with at least one phosphor.
• a converter layer 20a designed as a luminescence conversion layer with at least one phosphor.
• a phosphor for example, inorganic phosphors are suitable, the rare earths, in particular with Ce or Tb, doped garnets, which preferably have a basic structure A 3 B 5 Oi 2 , or organic phosphors, such as perylene phosphors.
• the converter layer 20a is coupled by means of a transparent intermediate layer 21 to the surface of the layer sequence 17 facing away from the main body 11.
• the transparent intermediate layer is formed as a passivation layer.
• the transparent intermediate layer 21 is preferably thermally conductive, ie, formed with a low thermal resistance, and further thermally conductively coupled to the metal body 15.
• Such a training of Optoelectronic component 10 is particularly suitable for dissipating the generated heat of the layer sequence 17 and a heat generated by the phosphor of the converter layer 20a, which is generated during the conversion of the primary radiation into the secondary radiation, in particular at a primary radiation in the UV wavelength range, to the main body 11th derive.
• the metal body 15 is formed and shaped such that it has a reflective effect on the metal body edges 22 which are assigned to the main emission direction of the emitted electromagnetic radiation of the layer sequence 17 and thus advantageously influences the emission characteristic of the optoelectronic component 10.
• the metal body 15 constitutes a housing of the optoelectronic component 10 to which additional optical elements and / or layers, such as e.g. optical lenses and / or cover layers can be applied with beam-forming properties.
• a converter ceramic 20b is applied to the metal body 15.
• a converter ceramic is in particular a base plate, comprising as a base material, for example, a ceramic in which a phosphor is introduced, which absorbs primary radiation of a first wavelength and converts it into secondary radiation of a further wavelength different from the first wavelength.
• the phosphor for example, the above-mentioned inorganic phosphors are suitable.
• the metal body 15 is used in the embodiment of Figure 2B as a support carrier of the converter ceramic 20b.
• a heat generated by the phosphor of the converter ceramic 20b which is generated during the conversion of the primary radiation into the secondary radiation, in particular with a primary radiation in the UV wavelength range, can be dissipated to the main body 11.
• Air can be arranged between the converter ceramic 20b and the layer sequence 17. Air has a low thermal conductivity, so that a thermal insulation between the converter ceramics 20b and the layer sequence 17 can be achieved.
• the converter layer 20b according to the embodiment of FIG. 2A can be connected to the surface of the layer sequence 17 facing away from the main body 11 by means of a transparent intermediate layer.
• FIG. 2B is identical to the embodiment of FIG.
• FIG. 3 shows a plan view of an optoelectronic component 10.
• the first and second electrical connection region 13 and 16 of the optoelectronic component 10 are applied.
• the first electrical connection region 13 is electrically coupled to the reflective electrical contact structure 18 (not shown).
• the second electrical connection region 16 is electrically coupled to the current distribution structure 14 by means of the metal body 15.
• the current distribution structure 14 is applied as a rectangular structure on the surface of the layer sequence 17 facing away from the base body, for example by means of a galvanic process.
• the current can be supplied in a particularly homogeneous manner to the layer sequence 17 in order to ensure a particularly homogeneous emission characteristic, in particular in the case of large-area optoelectronic components.
• the current distribution structure '14 may alternatively also be arranged in the form of concentric square or squares and / or rectangles with at least one common vertex.
• the main body 15 encloses the layer sequence 17 on three side surfaces and thereby ensures a particularly good heat dissipation into the base body 11. A border of all four side surfaces of the layer sequence 17 is possible.
• FIG. 4 shows a further optoelectronic component 10 with the layer sequence 17 and a current distribution structure 14 applied thereto.
• FIG. 4 shows a further exemplary embodiment in which the metal body 15 is not applied galvanically, but applied as a metal mask to the insulation 12 of the layer sequence 17 becomes.
• the metal body 15 formed as a metal mask typically comprises a recess in the form of the layer sequence 17 and can be applied directly to the insulation 12 of the layer sequence 17, for example by being soldered or glued.
• the metal body 15 formed as a metal mask may be formed such that only one side surface of the layer sequence 17 is covered with the metal body 15.
• the metal mask may also be annular, so that more than one side surface is covered by the metal body 15.
• the application of the metal body 15 formed as a metal mask is particularly advantageous if the metal mask more Recesses in the form of the layer sequence 17 and thus a composite of layer sequences 17 of optoelectronic devices 10 are provided on a common base body 11 with a metal body 15, for example. Such a production of optoelectronic components is particularly cost-effective.
• the optoelectronic component 10 may be designed such that the first electrical connection region 13 is coupled to the surface of the layer sequence assigned to the main body 15 by means of a non-reflective electrical contact structure 18.
• the base body 11 may be transparent, such as e.g. be formed with glass, or with a Ausnaturalüng in the form of the layer sequence 17 so that the optoelectronic component 10 emits the electromagnetic Strählung in a the base body 11 facing away from the emission direction and the base body 11 facing emission direction. Even with such a design of the optoelectronic component 10, it is ensured that the heat is dissipated laterally into the main body 11 by means of the metal body 15.
• FIG. 5 shows a plan view of a composite of a plurality of optoelectronic components 10 on a base body 11.
• Each of the illustrated optoelectronic components 10 comprises the first and second electrical connection regions 13 and 16.
• the individual optoelectronic components 10 can be interconnected electrically, for example in series.
• the electrical contacting of the respective optoelectronic components 10 may, for example, by means of Photolithographic process done.
• a metal body 15 formed as a metal mask which has a plurality of recesses for all layer sequences 17 of the composite of optoelectronic components 10, is conceivable.
• Each of the optoelectronic components 10 in each case comprises a metal body 15 on an insulation 12 formed as an insulation layer or as an insulation layer sequence.
• a metal body 15 on an insulation 12 formed as an insulation layer or as an insulation layer sequence.
• Such a configuration of the individual optoelectronic components 10 makes the required area of the respective optoelectronic component 10 particularly low, and thus the component density can be on a predetermined basic body 11 are designed to be particularly high.
• the metal body 15 may also be designed in the form of a ring around the layer sequence 17.
• the optoelectronic components 10 shown in FIG. 5 are rectangular. But other forms of the optoelectronic components 10 are conceivable, such as a hexagonal shape or a round shape. In particular, with regard to optimum heat dissipation and / or optimal use of the predetermined surface of the base body 11 is to decide which form is most suitable form.
• the composite of optoelectronic devices 10 shown in Figure 5 may be populated with additional electronic devices, e.g. Capacitors, resistors and / or inductors.
• the additional electronic components may be arranged to a predetermined circuit arrangement for driving the optoelectronic components, such. for current limiting or brightness control.

Landscapes

• Led Device Packages (AREA)
• Electroluminescent Light Sources (AREA)

Priority Applications (4)

Applications Claiming Priority (4)

Publications (1)

Family

ID=40690045

Family Applications (1)

Country Status (8)

Cited By (3)

Families Citing this family (6)

Citations (5)

Family Cites Families (25)

• 2008
  • 2008-02-29 DE DE102008011809A patent/DE102008011809A1/de not_active Withdrawn
  • 2008-12-04 US US12/809,682 patent/US8476667B2/en not_active Expired - Fee Related
  • 2008-12-04 EP EP08864112.1A patent/EP2223354B1/de active Active
  • 2008-12-04 WO PCT/DE2008/002036 patent/WO2009079978A1/de not_active Ceased
  • 2008-12-04 JP JP2010538326A patent/JP5568476B2/ja not_active Expired - Fee Related
  • 2008-12-04 KR KR1020107016078A patent/KR20100099309A/ko not_active Ceased
  • 2008-12-04 CN CN2008801217028A patent/CN101904022B/zh not_active Expired - Fee Related
  • 2008-12-10 TW TW097148008A patent/TWI431806B/zh not_active IP Right Cessation

Patent Citations (5)

Also Published As

Similar Documents

Legal Events